WO2017054265A1

WO2017054265A1 - Low-resistance transparent conductive thin film and preparation method therefor

Info

Publication number: WO2017054265A1
Application number: PCT/CN2015/092377
Authority: WO
Inventors: 王洋; 林清耿
Original assignee: 惠州易晖光电材料股份有限公司
Priority date: 2015-09-29
Filing date: 2015-10-21
Publication date: 2017-04-06
Also published as: TWI594886B; TW201711843A; SA517382074B1; CN105225728A; CN105225728B

Abstract

A low-resistance transparent conductive thin film and a preparation method therefor. The low-resistance transparent conductive thin film (1) comprises a metal mesh thin film layer (300) having a structure with several unordered holes, a transparent base film (200) stacked on a lower surface of the metal thin film layer, and a transparent conductive film layer (400) stacked on the upper surface of the metal thin film layer. The low-resistance transparent conductive thin film is prepared by the steps of firstly depositing a transparent base film on a substrate (100), then depositing a metal mesh thin film layer having a structure with several unordered holes by adopting a microsphere dip plating method, and then depositing a transparent conductive film layer. Since a metal mesh thin film layer thereof has a unique structure with unordered holes, the low-resistance transparent conductive thin film has better conductivity, higher visible light transmittance and a neutral appearance colour.

Description

Low-resistance transparent conductive film and preparation method thereof

Technical field

The invention relates to the field of optoelectronic components, in particular to a low-resistance transparent conductive film and a preparation method thereof.

Background technique

Transparent conductive films (TCFs) have the characteristics of permeable to visible light and good electrical conductivity. They are widely used in various types of flat panel displays, LED lamps, touch screens, photovoltaic cells, smart windows, EMI shielding films and other fields.

The most widely used transparent conductive film is mainly made of indium tin oxide (ITO) as a conductive material on hard substrate materials such as ceramics and glass. It has been used in optoelectronic devices for more than sixty years. However, such transparent conductive films have defects such as high material cost, fragility and brittleness, poor flexibility, and difficulty in deformation, and are not suitable as materials for preparing flexible transparent conductive films, which greatly limits the application of transparent conductive films.

With the increasing demand and requirements of displays, touch screens, photovoltaic cells, etc., conventional ITO films have been unable to adapt to flexible bending applications, and higher electrical conductivity, light transmission and the like.

In the research of transparent conductive film and flexible conductive film, nano silver wire film has been widely concerned and studied due to its high transparency, low surface resistance, smooth surface and good flexibility. However, since the nano silver wire film has to be electrically connected by stacking a plurality of nano silver wires, the adhesion is not good, the square resistance is high, the transmittance is greatly affected by the concentration of the nano silver wire, the haze value is high, and the oxidation is easy. The conductive liquid is expensive, the pretreatment process is insufficient, and the commercial application of the nano silver wire film is greatly limited.

technical problem

Problem solution

Technical solution

In order to solve the above problems, it is an object of the present invention to provide a low-resistance transparent conductive film. The low-resistance transparent conductive film is a three-layer film structure of a transparent base film/metal mesh film layer/transparent conductive film layer, which has high optical transmittance, low surface resistance, low haze value, neutral color, and is easy to be used. Prepared on a hard substrate or flexible substrate surface.

Another object of the present invention is to provide a method for producing the above low-resistance transparent conductive film.

The low-resistance transparent conductive film of the present invention comprises:

a metal mesh film layer having a plurality of disordered pore structures, wherein the shape, size and distribution of the disordered pore structure in the metal mesh film layer are random, and the width of the narrow side of any single disordered pore structure is smaller than 1000 nm, length less than 5000 nm;

a transparent base film laminated on a lower surface of the metal film layer;

A transparent conductive film layer laminated on the upper surface of the metal thin film layer.

Preferably, the transparent base film is a zinc oxide-based transparent film layer; and the metal mesh film layer is a silver mesh layer.

Specifically, the zinc oxide-based transparent film layer is a zinc oxide transparent film layer (ZnO), an aluminum-doped zinc oxide transparent film layer (AZO), a tin-doped zinc oxide transparent film layer (ZTO), and a gallium-doped zinc oxide transparent film layer. (GZO), one of an indium-doped zinc oxide transparent film layer (IZO) or an indium-doped gallium zinc oxide transparent film layer (IGZO).

In order to prevent oxidation, corrosion or granulation of pure silver, the silver mesh layer may be a silver alloy doped with 0.5% to 5% by weight of other metal components, such as platinum, titanium, gold. One of copper, chromium or nickel;

Alternatively, a barrier layer may be added to prevent oxidation, corrosion or granulation of pure silver. Specifically, a first barrier layer is deposited on the upper surface of the silver mesh layer; the first barrier layer is a nickel metal layer. One of a chromium metal layer, a titanium metal layer, a gold metal layer, a copper metal layer, a nickel chromium alloy layer, a nickel metal oxide layer, a chromium metal oxide layer, a titanium metal oxide layer or a copper metal oxide layer; The first barrier layer has a thickness of 1-10 nm;

In order to more effectively prevent oxidation, corrosion or granulation of pure silver, after depositing a first barrier layer on the upper surface of the silver mesh layer, depositing a second barrier layer on a lower surface of the silver mesh layer; The second barrier layer is a nickel metal layer, a chromium metal layer, a titanium metal layer, a gold metal layer, a copper metal layer, a nickel chromium alloy layer, a nickel metal oxide layer, a chromium metal oxide layer, a titanium metal oxide layer or a copper metal oxide. One of the layers; the second barrier layer has a thickness of 1-10 nm.

Preferably, the transparent conductive film layer is an indium tin oxide film layer (ITO), an aluminum-doped zinc oxide film layer (AZO), an antimony-doped tin oxide film layer (ATO), a zinc-doped indium oxide film layer (IZO), and a blend. A zinc tin oxide film layer (ZTO), a molybdenum oxide film layer (MoO ₃ ) or a titanium nitride layer (TiN).

Preferably, the transparent base film has a thickness of 10 to 70 nm; the metal mesh film layer has a thickness of 5 to 20 nm; and the transparent conductive film layer has a thickness of 10 to 70 nm.

The transparent conductive film layer covers the upper surface of the metal mesh film layer, and fills a cavity of the disordered hole structure of the metal mesh film layer, so that the transparent conductive film layer is connected to the transparent bottom film The light transmittance of the low-resistance transparent conductive film can be improved, and the color of the low-resistance transparent conductive film is neutral.

The preparation method of the above low-resistance transparent conductive film comprises the following steps:

S1, under normal temperature or low temperature conditions, a transparent base film is deposited on the surface of the substrate by magnetron sputtering;

S2, plating a layer of disordered microsphere mask on the surface of the transparent base film;

S3, applying a normal temperature magnetron sputtering process to deposit a metal film on the surface of the transparent base film coated with the microsphere mask;

S4, removing the microsphere mask to obtain a metal mesh film layer having a disordered pore structure;

S5. Under normal temperature or low temperature conditions, a transparent conductive film layer is deposited on the surface of the metal mesh film layer having a disordered pore structure by a magnetron sputtering process, that is, the preparation of the low-resistance transparent conductive film is completed.

Preferably, the substrate in the step S1 may be pre-plated with one or more transparent optical films before the deposition of the transparent base film according to the application, and specifically may be a silicon dioxide film, a tantalum pentoxide film, a titanium dioxide film or Silicon nitride film.

Preferably, the transparent base film in the step S1 is a zinc oxide-based transparent film layer, and the specific material may be zinc oxide, aluminum-doped zinc oxide, tin-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide or indium-doped gallium oxide. One of the zinc.

Preferably, the transparent base film deposited in step S1 has a thickness of 10 to 70 nm and a visible light refractive index of more than 1.5.

Preferably, the transparent base film is a zinc oxide-based transparent film layer; the zinc oxide-based transparent film layer is a zinc oxide transparent film layer, an aluminum-doped zinc oxide transparent film layer, a tin-doped zinc oxide transparent film layer, and a gallium-doped oxidation layer. One of a zinc transparent film layer, an indium-doped zinc oxide transparent film layer or an indium gallium zinc oxide transparent film layer.

Specifically, in step S2, a microsphere mask may be plated on the surface of the transparent base film by the method disclosed in Chinese Patent No. ZL 201110141276.8.

The microsphere layer mask in step S2 is a disorderly array of monodisperse microspheres.

The microspheres are preferably microspheres with low isoelectric point, specifically polystyrene microspheres, polymethyl methacrylate microspheres or Silica microspheres. The microspheres have a diameter ranging from 100 to 1000 nanometers; and the surface area coverage of the microspheres on the surface of the transparent base film is 10% to 40%.

Preferably, the arrangement of the microspheres in the transparent base film is irregularly distributed of irregular small clusters, each cluster containing 1-20 microspheres, each cluster having an inconsistent shape and size, each The width of the clusters does not exceed 1000 nm, and the length of each cluster does not exceed 5000 nm.

Preferably, the thickness of the metal thin film in step S3 is 5-20 nm. The thickness of the metal film is determined according to the actual required surface resistance requirement, and the larger the thickness, the smaller the sheet resistance.

Preferably, the material of the metal thin film in step S3 is silver;

More preferably, the material of the metal thin film in step S3 is a silver alloy doped with 0.5% to 5% by weight of other metal components, such as platinum, titanium, gold, copper, chromium or nickel. One of the others.

Specifically, in step S4, the microsphere mask can be removed by means of isopropyl alcohol wiping, pure water ultrasonic cleaning or boiling ethanol cleaning.

Preferably, the transparent conductive film layer in the step S5 has a thickness of 10 to 70 nm and a visible light refractive index of more than 1.5.

Preferably, the transparent conductive film layer in the step S5 is an indium tin oxide film layer, an aluminum-doped zinc oxide film layer, an antimony-doped tin oxide film layer, a zinc-doped indium oxide film layer, a tin-doped zinc oxide film layer, or a molybdenum oxide film. Layer or titanium nitride film layer.

Advantageous effects of the invention

Beneficial effect

The advantages and effects of the present invention over the prior art:

(1) The low-resistance transparent conductive film of the present invention is a three-layer film structure of a transparent base film/metal mesh film layer/transparent conductive film layer, because the metal mesh film layer has a unique disordered pore structure, The low-resistance transparent conductive film has better conductivity than the transparent conductive film of the prior art, and the sheet resistance can reach 20 ohms/square or less.

(2) The metal mesh film layer of the low-resistance transparent conductive film of the present invention has a disordered pore structure of a nano-scale pore size, a continuous metal film having no pores and a micron-scale pore size (hole width greater than 1000 nm) The metal mesh can enhance the surface plasmon effect, which can excite stronger surface plasmons under the action of incident light, and the coupling between the excitation elements on both sides of the metal mesh film layer. More strong, so that it can pass through the metal mesh film layer At the same time, the method of superposing the high refractive index transparent dielectric layer further strengthens the optical antireflection effect of the surface plasmon, and finally achieves a higher visible light transmittance.

(3) The arrangement of the disordered pore structure and the disorder of the shape and size of the metal mesh film layer of the low-resistance transparent conductive film of the present invention avoid the appearance of color interference fringes, so that the low-resistance transparent conductive The film looks neutral in color.

Brief description of the drawing

DRAWINGS

1 is a schematic structural view of a low-resistance transparent conductive film according to Embodiment 1 of the present invention.

2 is a scanning electron microscope image view of a metal mesh film layer of the low-resistance transparent conductive film according to Embodiment 1 of the present invention.

3 is an atomic force microscope image view of a metal mesh film layer of the low-resistance transparent conductive film according to Embodiment 1 of the present invention.

4 is a graph showing the visible light transmittance of a low-resistance transparent conductive film of different surface resistances of the present invention.

Fig. 5 is a view showing the surface roughness of the low-resistance transparent conductive film of the first embodiment.

Invention embodiment

Embodiments of the invention

One or more embodiments will be described in detail below with reference to the drawings. The detailed description is provided in connection with the embodiments, but is not limited to any specific examples. The scope of the invention is to be limited only by the scope of the appended claims The specific details set forth in the following description are intended to provide a comprehensive understanding. These details are provided for illustrative purposes, and the described technology can be implemented in accordance with the claims without some or all of these specific details. For the sake of brevity, technical material that is known in the technical field of the embodiments is not described in detail to avoid unnecessarily obscuring the description.

Example 1

As shown in FIG. 1, a low-resistance transparent conductive film 1 is deposited on the surface of a substrate 100. The low-resistance transparent conductive film 1 includes:

a layer of transparent base film 200 deposited on the surface of the substrate 100;

A metal mesh film layer 300 having a plurality of disordered pore structures deposited on the upper surface of the transparent base film 200; in conjunction with FIGS. 2 and 3, FIG. 2 is a scanning electron microscope image of the metal mesh film layer 300, FIG. Gold The atomic force microscope image of the mesh film layer 300, as can be seen from FIG. 2 and FIG. 3, the shape, size and distribution of the disordered hole structure in the metal mesh film layer 300 are random;

And a transparent conductive film layer 400 deposited on the upper surface of the metal mesh film layer 300.

In the present embodiment, the substrate 100 is a transparent glass substrate having a thickness of 0.7 mm.

The transparent base film 200 is preferably a zinc oxide-based transparent film layer having a thickness of 10 to 70 nm. In the embodiment, the transparent base film 200 is an aluminum-doped zinc oxide transparent film layer having a thickness of 32 nm.

In this embodiment, the metal mesh film layer 300 is a silver mesh layer having a thickness of 10 nm.

Since the lattice constant of the zinc oxide-based material (0.3-0.5 nm) is close to the lattice constant of polycrystalline silver (0.4 nm), the silver mesh layer deposited on the zinc oxide-based film layer is deposited on other transparent films. It has better lattice matching and less stress, which can achieve better film flatness, continuity and foldability, and help to optimize the thickness, transmittance, surface resistance and surface resistance of the silver mesh layer. stability.

In this embodiment, the shape, size, and distribution of the disordered pore structure of the silver mesh layer layer are random, and the width of the narrow side of any single disordered pore structure is less than 1000 nm and the length is less than 5000 nm.

The transparent conductive film layer 400 may be an indium tin oxide film layer, an aluminum-doped zinc oxide film layer, an antimony-doped tin oxide film layer, a zinc-doped indium oxide film layer, a tin-doped zinc oxide film layer, a molybdenum oxide film layer or nitrided. In the present embodiment, the transparent conductive film layer 400 is an indium tin oxide film layer and has a thickness of 40 nm.

Since the metal mesh film layer 300 has a disordered hole structure, the transparent conductive film layer 400 deposited on the metal mesh film layer 300 fills all the disordered holes, and the transparent conductive film layer 400 is connected to the transparent base film 200. The light transmittance of the low-resistance transparent conductive film 1 can be improved.

The preparation method of the low-resistance transparent conductive film of this embodiment is as follows:

S1, under normal temperature or low temperature conditions, a layer of aluminum-doped zinc oxide transparent base film is deposited on the surface of the glass substrate by magnetron sputtering;

The normal temperature or low temperature condition is a temperature condition of 20-200 ° C;

The method of depositing a thin film by a magnetron sputtering process is a conventional conventional process. In this embodiment, the transparent bottom is optimized by adjusting the parameters of the magnetron sputtering process such as deposition temperature, deposition pressure, sputtering power, and oxygen content in the working gas. The transmittance of the film in visible light having a wavelength in the range of 450 to 700 nm, and the visible light refractive index is greater than 1.5.

Taking advantage of the relatively high isoelectric point of the zinc oxide-based material, the surface of the aluminum-doped zinc oxide transparent base film is covered with a disorderly arrangement of monodisperse microspheres, microspheres, using the immersion plating method disclosed in Chinese invention patent ZL 201110141276.8. The low isoelectric point material is selected, and polystyrene microspheres are selected in this embodiment. The diameter of the polystyrene microspheres ranges from 100 to 1000 nm, and the arrangement of the polystyrene microspheres in the aluminum-doped zinc oxide transparent base film is irregularly distributed in irregular small clusters, and each cluster contains 1-20. Microspheres, the shape and size of each cluster are inconsistent, the width of each cluster is not more than 1000 nanometers, and the length of each cluster is not more than 5000 nanometers.

S3, applying a normal temperature magnetron sputtering process to deposit a silver layer on the surface of the transparent base film coated with the microsphere mask;

The thickness of the silver layer is 5-20 nm, and the thickness is determined according to the actual surface resistance requirement. The larger the thickness, the smaller the surface resistance.

S4, removing the microsphere mask by wiping with isopropyl alcohol, ultrasonic cleaning with pure water or boiling ethanol, thereby forming a silver mesh layer having a disordered pore structure on the surface of the aluminum-doped zinc oxide transparent base film;

S5, under normal temperature or low temperature conditions, a transparent indium tin oxide film layer is deposited on the upper surface of the silver mesh layer having disordered pore structure by a magnetron sputtering process, the thickness is 40 nm, and the visible light refractive index is greater than 1.5; Adjusting the parameters optimizes the magnetron sputtering process to maximize the visible light transmittance of the transparent indium tin oxide film layer while ensuring that the resistivity is not higher than 1 × 10 ^-3 Ω·cm. The preparation of the low-resistance transparent conductive film is completed through the above steps.

According to the method of Example 1, the thickness of the silver mesh layer was adjusted so that the surface resistance of the finally obtained silver mesh layer was 15 ohm/square, and a low-resistance transparent conductive film was obtained, which was designated as F1. It has been found that the low-resistance transparent conductive film F1 has a visible light transmittance of 90.7% at a wavelength of 550 nm and an average visible light transmittance of 88.3% in a wavelength range of 470-700 nm.

According to the method of Example 1, the thickness of the silver mesh layer was adjusted so that the surface resistance of the finally obtained silver mesh layer was 10 ohm/square, and a low-resistance transparent conductive film was obtained, which was designated as F2. The visible light transmittance curves of the low-resistance transparent conductive films F1 and F2 are shown in Fig. 4, wherein the a curve is a visible light transmittance curve of the low-resistance transparent conductive film F1 having a sheet resistance of 15 ohm/square, and the b curve is a surface. A visible light transmittance curve of a low-resistance transparent conductive film F2 having a resistance of 10 ohms/square. Because the thickness of the silver mesh layer is also increased as the sheet resistance increases. Correspondingly, as shown in FIG. 4, the larger the sheet resistance, the higher the visible light transmittance; and the low-resistance transparent conductive film F1 having a sheet resistance of 15 ohms can have a visible light transmittance of 90.7%.

The low-resistance transparent conductive film of the present invention has a good flatness and thus has a small haze value.

As shown in FIG. 5, the surface roughness of the low-resistance transparent conductive film in the present embodiment on a 0.7 mm thick non-polished glass substrate is R _PV = 18 nm, Rq = 4.5 nm, Ra = 3.7 nm, at a wavelength of 550 nm. The haze value is less than 2%.

Example 2

A low resistance transparent conductive film deposited on a surface of a flexible substrate. The structure of the low-resistance transparent conductive film of the embodiment is similar to that of the low-resistance transparent conductive film of the embodiment 1, and includes:

a layer of zinc oxide-based transparent film deposited on the surface of the flexible substrate;

a metal mesh film layer having a plurality of disordered pore structures deposited on the upper surface of the transparent base film; the shape, size and distribution of the disordered pore structure in the metal mesh film layer are random;

And a transparent conductive film layer deposited on the upper surface of the metal mesh film layer.

In this embodiment, the flexible substrate is a PET flexible substrate;

The zinc oxide-based transparent film layer is a transparent zinc oxide film layer having a thickness of 70 nm;

The metal mesh film layer is a silver alloy mesh layer having a thickness of 20 nm; the material of the silver alloy mesh layer is a silver platinum alloy, wherein a weight ratio of platinum in the silver platinum alloy is 0.5%;

The transparent conductive film layer is a zinc-doped indium oxide film layer having a thickness of 10 nm.

The method for preparing the low-resistance transparent conductive film of the present embodiment is the same as that of the first embodiment, except that the materials of the film layers are different; and the processes of the magnetron sputtering process and the immersion plating method are adjusted according to the film thickness and structure. parameter.

Example 3

A low resistance transparent conductive film deposited on a hard substrate surface. The low-resistance transparent conductive film of this embodiment includes:

a layer of zinc oxide-based transparent film deposited on the surface of the rigid substrate;

a first barrier layer deposited on the zinc oxide-based transparent film layer;

a metal mesh film layer having a plurality of disordered pore structures deposited on the upper surface of the first barrier layer; the shape, size and distribution of the disordered pore structure in the metal mesh film layer are random;

a second barrier layer deposited on the metal mesh film layer;

And a layer of transparent conductive film deposited on the upper surface of the second barrier layer.

In this embodiment, the rigid substrate is a glass substrate;

The zinc oxide-based transparent film layer is an indium-doped gallium zinc oxide transparent film layer having a thickness of 10 nm;

The first barrier layer is a nickel metal layer having a thickness of 1 nm;

The metal mesh film layer is a silver mesh layer with a thickness of 5 nanometers;

The second barrier layer is a copper metal layer having a thickness of 10 nanometers;

The transparent conductive film layer is an antimony-doped tin oxide film layer having a thickness of 10 nm.

The method for preparing the low-resistance transparent conductive film of the embodiment includes the following steps:

Under S1 and 20 °C, a transparent indium gallium zinc oxide transparent film layer is deposited on the surface of the glass substrate by magnetron sputtering, and the thickness is 10 nm;

S2, depositing a nickel metal layer on the transparent indium gallium zinc oxide transparent film layer, the thickness is 5 nanometers;

S3, a surface of the nickel metal layer is coated with a disorderly arranged polymethyl methacrylate microsphere mask, and the polymethyl methacrylate microspheres have a diameter ranging from 100 to 1000 nm and a surface area coverage of 40%. ;

S4, applying a normal temperature magnetron sputtering process to deposit a silver layer on the surface of the nickel metal layer coated with the microsphere mask;

S5, removing the microsphere mask by boiling ethanol cleaning, thereby forming a silver mesh layer having a disordered pore structure on the surface of the nickel metal layer;

S6, depositing a copper metal layer on the surface of the silver mesh layer with a thickness of 10 nanometers;

At S7 and 100 °C, a layer of antimony-doped tin oxide film was deposited on the surface of the copper metal layer by magnetron sputtering. The thickness was 10 nm and the visible light refractive index was greater than 1.5. The parameters were optimized by magnetron sputtering. The visible light transmittance of the transparent indium tin oxide film layer is maximized while ensuring that the resistivity is not higher than 1 × 10 ^-3 Ω·cm. The preparation of the low-resistance transparent conductive film is completed through the above steps.

Although the above examples have been described in detail to facilitate a clear understanding, the invention is not limited to the details. There are many alternative ways of implementing the invention. The disclosed examples are illustrative and not restrictive.

Claims

A low resistance transparent conductive film comprising:

a metal mesh film layer having a plurality of disordered pore structures, wherein the shape, size and distribution of the disordered pore structure in the metal mesh film layer are random, and the width of the narrow side of any single disordered pore structure is smaller than 1000 nm, length less than 5000 nm;

a transparent base film laminated on a lower surface of the metal film layer;

A transparent conductive film layer laminated on the upper surface of the metal thin film layer.
The low-resistance transparent conductive film according to claim 1, wherein the transparent base film is a zinc oxide-based transparent film layer; and the metal mesh film layer is a silver mesh layer.
The low-resistance transparent conductive film according to claim 2, wherein the zinc oxide-based transparent film layer is a transparent zinc oxide film layer, an aluminum-doped zinc oxide transparent film layer, a tin-doped zinc oxide transparent film layer, and a gallium-doped film. One of a transparent zinc oxide layer, an indium-doped zinc oxide transparent film layer or an indium gallium zinc oxide transparent film layer.
The low-resistance transparent conductive film according to claim 2 or 3, wherein the silver mesh layer is a silver alloy doped with 0.5% to 5% by weight of other metal components, and the other metal component It is one of platinum, titanium, gold, copper, chromium or nickel.
The low-resistance transparent conductive film according to claim 2, wherein a first barrier layer is deposited on an upper surface of the silver mesh layer; the first barrier layer is a nickel metal layer, a chromium metal layer, and a titanium metal layer. a metal metal layer, a copper metal layer, a nickel-chromium alloy layer, a nickel metal oxide layer, a chromium metal oxide layer, a titanium metal oxide layer or a copper metal oxide layer; the thickness of the first barrier layer It is 1-10 nm.
The low-resistance transparent conductive film according to claim 5, wherein a second barrier layer is deposited on a lower surface of the silver mesh layer; the second barrier layer is a nickel metal layer, a chromium metal layer, and a titanium metal One of a layer, a gold metal layer, a copper metal layer, a nickel-chromium alloy layer, a nickel metal oxide layer, a chromium metal oxide layer, a titanium metal oxide layer or a copper metal oxide layer; the second barrier layer The thickness is 1-10 nm.
The low-resistance transparent conductive film according to any one of claims 1 to 6, wherein the transparent conductive film layer is an indium tin oxide film layer, an aluminum-doped zinc oxide film layer, and antimony-doped tin oxide. a film layer, a zinc-doped indium oxide film layer, a tin-doped zinc oxide film layer, a molybdenum oxide film layer or a titanium nitride layer.
The low-resistance transparent conductive film according to any one of claims 1 to 7, wherein the transparent base film has a thickness of 10 to 70 nm; and the metal mesh film layer has a thickness of 5 to 20 nm; The transparent conductive film layer has a thickness of 10 to 70 nm.
A method for preparing a low-resistance transparent conductive film according to any one of claims 1-8, comprising the steps of:

S1, under normal temperature or low temperature conditions, a transparent base film is deposited on the surface of the substrate by magnetron sputtering;

S2, plating a layer of disordered microsphere mask on the surface of the transparent base film;

S3, applying a normal temperature magnetron sputtering process to deposit a metal film on the surface of the transparent base film coated with the microsphere mask;

S4, removing the microsphere mask to obtain a metal mesh film layer having a disordered pore structure;

S5. Under normal temperature or low temperature conditions, a transparent conductive film layer is deposited on the surface of the metal mesh film layer having a disordered pore structure by a magnetron sputtering process, that is, the preparation of the low-resistance transparent conductive film is completed.
The method of preparing a low-resistance transparent conductive film according to claim 9, wherein in the step S1, the substrate is pre-plated with one or more transparent optical films before depositing the transparent base film.
The method for preparing a low-resistance transparent conductive film according to claim 10, wherein the transparent optical film is a silicon dioxide film, a tantalum pentoxide film, a titanium dioxide film or a silicon nitride film.
The method for preparing a low-resistance transparent conductive film according to claim 9 or 10, wherein the transparent base film deposited in the step S1 has a thickness of 10 to 70 nm and a visible light refractive index of more than 1.5.
The method for preparing a low-resistance transparent conductive film according to claim 9, wherein the microsphere layer mask in step S2 is a disorderly array of monodisperse microspheres.
The method for preparing a low-resistance transparent conductive film according to claim 13, wherein the microspheres have a diameter ranging from 100 to 1000 nm; and the surface area coverage of the microspheres on the surface of the transparent base film is 10 %-40%.
The method for preparing a low-resistance transparent conductive film according to claim 13, wherein the arrangement of the microspheres in the transparent base film is irregularly distributed in irregular small clusters, and each cluster comprises 1- 20 microspheres, each cluster has the same shape and size, the width of each cluster is less than 1000 nanometers, and the length of each cluster is less than 5000 nanometers.