CN108074991A - A kind of composite transparent conductive film - Google Patents
A kind of composite transparent conductive film Download PDFInfo
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- CN108074991A CN108074991A CN201711283048.8A CN201711283048A CN108074991A CN 108074991 A CN108074991 A CN 108074991A CN 201711283048 A CN201711283048 A CN 201711283048A CN 108074991 A CN108074991 A CN 108074991A
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- 239000002131 composite material Substances 0.000 title claims abstract description 28
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 20
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 14
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 8
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- -1 Formic acid glycol ester Chemical class 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 3
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 1
- 235000019253 formic acid Nutrition 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 2
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 42
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000004408 titanium dioxide Substances 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229960001296 zinc oxide Drugs 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001097 yellow gold Inorganic materials 0.000 description 1
- 239000010930 yellow gold Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Laminated Bodies (AREA)
Abstract
The present invention provides a kind of composite transparent conductive film, it includes：Transparent substrates；Two protectiveness antireflective metal oxide layers；An and silver alloy conductive layer；And the silver alloy conductive layer is disposed between two protectiveness antireflective metal oxide layers.This composite transparent conductive film provided by the invention has higher transmitance and electrical conductivity, while has preferable environmental resistance, not oxidizable, not easily to fall off.In addition, this conductive film also has antiultraviolet and heat-insulated effect.
Description
Technical field
The present invention relates to photoelectricity film applications, the optoelectronic film has the characteristics such as high transmittance, low resistance, has simultaneously
There is preferable environmental resistance, it is not oxidizable, it is not easily to fall off.In addition, this conductive film also has antiultraviolet and heat-insulated effect
Fruit.
Background technology
Transparent conductive film is the devices such as flat panel TV, touch-screen, intelligent glass pane, light emitting diode and photovoltaic cell
The necessary component of manufacture.In recent years, with information (such as touch and show), the energy (such as photovoltaic, intelligent glass pane) industry
Development, people increased dramatically the demand of transparent conductive film, and in transparent conductive film, and most widely used one kind is
Tin_doped indium oxide film, that is, the ito thin film being commonly called as.It is well known that content of the phosphide element in the earth's crust is rare (about
0.05ppm), and it is difficult to purify, is significantly increased with the dosage of ito thin film, content is more and more rare, causes price abruptly increase
(nearly 5000 yuan/kilogram), so as to increase the manufacture cost of the industries such as touch-screen, thin-film solar cells.In 2014, ITO
Sales volume be about 1,800,000,000 dollars, account for 92% or so of entire transparent conductive film market.On the other hand, in order to manufacture large size
The devices such as display, large area solid luminescent plate, it is desirable that the square resistance of transparent conductive film used be necessarily less than 10 Ω/
□.Although this requirement can be met by the thickness for increasing ito thin film, cost from 150 Ω/ when about 40 yuan/
230 yuan/square metre when square metre being significantly increased to 5 Ω/ or so, the increase of this cost is because as film thickness increases
Add, the sedimentation rate of ITO reduces, and most of ITO raw materials is caused to be wasted.Therefore, it is necessary to find a kind of novel transparent conductive thin
Film.
In order to reduce the dependency degree to ITO, researcher attempts to look for practicable ITO substitutes, gradually develops
Doping zinc-oxide film (AZO and GZO etc.), carbon-based transparent conductive film (carbon nanotubes nethike embrane and graphene etc.) and metal mesh
Grid transparent conductive film etc..Although doping zinc-oxide film can obtain very low square resistance by increasing the thickness of film,
But resistance to acid and alkali is poor, performance is unstable, should not be used in the preparation of the devices such as flexible display, photovoltaic cell；It is and carbon-based transparent
Although conductive film transmitance is high, its resistivity is high, with semi-conductor industry poor compatibility, should not mass produce, especially
It is that the preparation of graphene needs hot conditions, limits its extensive use in field of touch screen manufacturing.Medium/medium/metal three
The transparent conductive film of Mingzhi's structure due to its resistivity and transmitance it is adjustable cheap and and semiconductor technology compatibility, because
This, in the preparation of the huge flexible touch screen of industry, solar cell etc., is more and more favored, and becomes weight
A kind of feasible novel I TO substitution films of point research recently become the research hotspot of scientific circles and industrial quarters.
The content of the invention
Goal of the invention：Design a kind of composite transparent conductive film so that the oxide skin(coating) in the transparent conductive film can be reduced
The reflection of metal film increases whole transmitance, meanwhile, it is capable to prevent that metal from being aoxidized, ensure high visible light transmittance,
It, can be by ultraviolet light reflection while antiradar reflectivity.
Technical solution：The present invention provides a kind of composite transparent conductive film, including transparent base layer, two protectiveness antireflectives
Metal oxide layer and silver alloy conductive layer, and form four-layer structure；
It is followed successively by from top to bottom：Upper protectiveness antireflective metal oxide layer, silver alloy conductive layer, lower protectiveness antireflective
Metal oxide layer, transparent base layer.
Further, above-mentioned four-layer structure is by protectiveness antireflective metal oxide and silver by the method for magnetron sputtering
Layering is splashed to what is formed in transparent substrates.
Further, the visible light transmittance of the four-layer structure is higher than 92%.
Further, upper protectiveness antireflective metal oxide layer, silver alloy conductive layer and lower protectiveness anti-reflection radioglold
The square resistance for belonging to oxide skin(coating) entirety is no more than 10 ohm.
Further, transparent base layer material is flexible polyethylene terephthalate, organic glass or unorganic glass.
Further, protectiveness antireflective oxide skin(coating) material for niobium pentaoxide (Nb2O5), titanium dioxide (TiO2),
Tungsten oxide (WO3), tin indium oxide (ITO), zinc oxide (ZnO), gallium oxide zinc (GZO) or indium zinc oxide (IZO).
Further, the thickness of two protectiveness antireflective metal oxide layers is 30~50 nanometers.
Further, silver alloy conductive layer material is the oxide or nitride of Kufil or aluminium silver alloy, molecule
Formula is AgxB1-xCy, B represents copper Cu or aluminium element Al, C represent oxygen element O or nitrogen N, x and y representative mole total amount
Percentage, the scope that the scope of x is 0.9~0.98, y is 0.02~0.1.
Further, the thickness of the metal conducting layer is 6~15 nanometers.
Oxide skin(coating) in the composite transparent conductive film can reduce the reflection of metal film, increase whole transmitance,
Meanwhile, it is capable to prevent that metal from being aoxidized, it, can be by ultraviolet light reflection while high visible light transmittance, antiradar reflectivity is ensured.
Sputtering technology：The Core Feature layer of the composite transparent conductive film relies primarily on the electric conductivity of metal Ag films.By
It in Ag when sputter is grown, is easily grown in the form of island, thicker thickness is needed (to be typically larger than 12 to receive when forming membrane structure
Rice), therefore, cause whole transmitance very low, it is difficult to prepare high transmittance, low-resistance transparent conductive film.The present invention
Using a kind of special target and sputtering mode, i.e., using silver-colored aluminium or yellow gold target, in oxygen or nitrogen and argon gas atmosphere
In, by reactive sputtering come sputter silver alloy film.This method can not only significantly reduce the threshold thickness of silver metal film film forming (about
4 nanometers), while the oxidation proof propertiess of silverskin can be improved.
The visible light transmittance of the composite transparent conductive film can also be above 90%, and surface square resistance is less than 5 ohm.
The visible light transmittance of the composite transparent conductive film can also be above 88%, and surface square resistance is less than 8 ohm.
High transmittance, low-resistance method are manufactured the present invention also provides a kind of, the described method includes：Transparent substrates are provided
(glass or PET)；With magnetron sputtering sputter protectiveness antireflective oxide skin(coating)；It is and conductive with reactive sputtering sputter silver alloy
Layer.
Description of the drawings
1 is schematic diagram of the invention in figure；
Wherein：Transparent substrates, 2,4 be protectiveness anti-reflection oxide skin(coating), and 3 be silver alloy conductive layer.
Specific embodiment
Embodiment one
As shown in Figure 1, this illustrates an a kind of embodiment of composite transparent conductive film, the composite transparent conductive film
Comprising transparent substrates (1), protectiveness anti-reflection oxide skin(coating) (2 and 4) and silver alloy conductive layer (3).
Transparent substrates bottom (1) is made of unorganic glass.Preferably, the thickness of flexible transparent substrate (1) is 0.5 millimeter.
The metal conducting layer (3) or by Ag, Al, O or by Ag, Cu, O or Ag, Al, N can be made of Ag, Cu, N etc.
Ag alloying metals layer is formed.In preferred embodiments, using the silver alloy of the elements such as Ag, Al, O composition as metallic conduction
Layer.Using Ag0.95Al0.05Alloys target under argon gas and oxygen mixture atmosphere, using reaction magnetocontrol sputtering, is prepared
Ag0.95Al0.05OxAlloy conductive layer, thickness are 8 nanometers.
The protectiveness antireflection layer (2) includes but not limited to be selected from by niobium pentaoxide (Nb2O5), titanium dioxide
(TiO2), tungsten oxide (WO3), tin indium oxide (ITO), zinc oxide (ZnO), gallium oxide zinc (GZO) or indium zinc oxide (IZO) etc. its
A kind of middle material composition.In preferred embodiments, protectiveness antireflection layer (2) is titanium dioxide (TiO2).Oxide is usual
It is formed by magnetron sputtering plating, thickness is 40 nanometers.Target is titanium dioxide ceramic target.
The protectiveness antireflection layer (4) includes but not limited to be selected from by niobium pentaoxide (Nb2O5), titanium dioxide
(TiO2), tungsten oxide (WO3), tin indium oxide (ITO), zinc oxide (ZnO), gallium oxide zinc (GZO) or indium zinc oxide (IZO) etc. its
A kind of middle material composition.In preferred embodiments, protectiveness antireflection layer (4) is titanium dioxide (TiO2).Oxide is usual
It is formed by magnetron sputtering plating, thickness is 35 nanometers.Target is titanium dioxide ceramic target.
The composite transparent conductive film that the present embodiment is obtained, sheet resistivity are 9.5 ohm, transmitance 93.1%.
Embodiment two
As shown in Figure 1, this illustrates an a kind of embodiment of composite transparent conductive film, the composite transparent conductive film
Comprising transparent substrates (1), protectiveness anti-reflection oxide skin(coating) (2 and 4) and silver alloy conductive layer (3).
Transparent substrates bottom (1) is made of unorganic glass.Preferably, the thickness of flexible transparent substrate (1) is 0.5 millimeter.
The metal conducting layer (3) or by Ag, Al, O or by Ag, Cu, O or Ag, Al, N can be made of Ag, Cu, N etc.
Ag alloying metals layer is formed.In preferred embodiments, using the silver alloy of the elements such as Ag, Al, O composition as metallic conduction
Layer.Using Ag0.95Al0.05Alloys target under argon gas and oxygen mixture atmosphere, using reaction magnetocontrol sputtering, is prepared
Ag0.95Al0.05OxAlloy conductive layer, thickness are 12 nanometers.
The protectiveness antireflection layer (2) includes but not limited to be selected from by niobium pentaoxide (Nb2O5), titanium dioxide
(TiO2), tungsten oxide (WO3), tin indium oxide (ITO), zinc oxide (ZnO), gallium oxide zinc (GZO) or indium zinc oxide (IZO) etc. its
A kind of middle material composition.In preferred embodiments, protectiveness antireflection layer (2) is titanium dioxide (TiO2).Oxide is usual
It is formed by magnetron sputtering plating, thickness is 43 nanometers.Target is titanium dioxide ceramic target.
The protectiveness antireflection layer (4) includes but not limited to be selected from by niobium pentaoxide (Nb2O5), titanium dioxide
(TiO2), tungsten oxide (WO3), tin indium oxide (ITO), zinc oxide (ZnO), gallium oxide zinc (GZO) or indium zinc oxide (IZO) etc. its
A kind of middle material composition.In preferred embodiments, protectiveness antireflection layer (4) is titanium dioxide (TiO2).Oxide is usual
It is formed by magnetron sputtering plating, thickness is 38 nanometers.Target is titanium dioxide ceramic target.
The composite transparent conductive film that the present embodiment is obtained, sheet resistivity are 4.5 ohm, transmitance 90.4%.
Embodiment three
As shown in Figure 1, this illustrates an a kind of embodiment of composite transparent conductive film, the composite transparent conductive film
Comprising transparent substrates (1), protectiveness anti-reflection oxide skin(coating) (2 and 4) and silver alloy conductive layer (3).
Transparent substrates bottom (1) is by flexible and transparent polyethylene terephthalate and its in dual coating ultra-violet curing
Polyacrylate hardening coat is formed.Preferably, the thickness of flexible transparent substrate (1) is 125 microns or 50 microns.
The polyacrylate hardening coat of the ultra-violet curing is coated uniformly on flexible and transparent PET using traditional takeup type rubbing method
The both sides of substrate, to improve the intensity of flexible transparent substrate (1), hardness and durability etc..
The metal conducting layer (3) or by Ag, Al, O or by Ag, Cu, O or Ag, Al, N can be made of Ag, Cu, N etc.
Ag alloying metals layer is formed.In preferred embodiments, using the silver alloy of the elements such as Ag, Al, O composition as metallic conduction
Layer.Using Ag0.95Al0.05Alloys target under argon gas and oxygen mixture atmosphere, using reaction magnetocontrol sputtering, is prepared
Ag0.95Al0.05OxAlloy conductive layer, thickness are 10 nanometers.
The protectiveness antireflection layer (2) includes but not limited to be selected from by niobium pentaoxide (Nb2O5), titanium dioxide
(TiO2), tungsten oxide (WO3), tin indium oxide (ITO), zinc oxide (ZnO), gallium oxide zinc (GZO) or indium zinc oxide (IZO) etc. its
A kind of middle material composition.In preferred embodiments, protectiveness antireflection layer (2) tin indium oxide (ITO).Oxide is usually by magnetic
Control sputter coating is formed, and thickness is 40 nanometers.Target is tin indium oxide ceramic target.
The protectiveness antireflection layer (4) includes but not limited to be selected from by niobium pentaoxide (Nb2O5), titanium dioxide
(TiO2), tungsten oxide (WO3), tin indium oxide (ITO), zinc oxide (ZnO), gallium oxide zinc (GZO) or indium zinc oxide (IZO) etc. its
A kind of middle material composition.In preferred embodiments, protectiveness antireflection layer (4) is titanium dioxide (TiO2).Oxide is usual
It is formed by magnetron sputtering plating, thickness is 35 nanometers.Target is tin indium oxide ceramic target.
The composite transparent conductive film that the present embodiment is obtained, sheet resistivity are 7.5 ohm, transmitance 89%.
Preferred embodiment of the present invention, detailed description are intended to illustrative, should not be understood as to this public affairs
Open the limitation of scope.Any independent material disclosed in this invention, numerical value or characteristic all can with any other materials of the disclosure,
Numerical value or characteristic are used interchangeably, as the specific embodiment given by the present invention.Anyone is under the enlightenment of the present invention
It can all draw other various forms of products, however, make any variation in its material, shape or structure, it is every to have and this
Apply for the same or similar technical solution, be within the scope of the present invention.
Claims (9)
1. a kind of composite transparent conductive film is closed including transparent base layer, two protectiveness antireflective metal oxide layers and silver
Golden conductive layer, and form four-layer structure；
It is followed successively by from top to bottom：Upper protectiveness antireflective metal oxide layer, silver alloy conductive layer, lower protectiveness antireflective metal
Oxide skin(coating), transparent base layer.
2. composite transparent conductive film as described in claim 1, it is characterised in that：Above-mentioned four-layer structure is by magnetron sputtering
Protectiveness antireflective metal oxide and silver layering are splashed to what is formed in transparent substrates by method.
3. composite transparent conductive film as claimed in claim 1 or 2, it is characterised in that：The visible light-transmissive of the four-layer structure
Rate is at least up to 88%.
4. composite transparent conductive film as described in claim 1, it is characterised in that：Upper protectiveness antireflective metal oxide layer,
Silver alloy conductive layer and the square resistance of lower protectiveness antireflective metal oxide layer entirety are less than 10 ohm.
5. composite transparent conductive film as described in claim 1, it is characterised in that：Transparent base layer material is flexible poly- to benzene two
Formic acid glycol ester, organic glass or unorganic glass.
6. composite transparent conductive film as described in claim 1, it is characterised in that：Protectiveness antireflective oxide skin(coating) material is five
Aoxidize two niobiums (Nb2O5), titanium dioxide (TiO2), tungsten oxide (WO3), tin indium oxide (ITO), zinc oxide (ZnO), gallium oxide zinc
(GZO) or indium zinc oxide (IZO).
7. the composite transparent conductive film as described in claim 1 or 6, it is characterised in that：Two protectiveness antireflective metal oxidations
The thickness of nitride layer is 30~50 nanometers.
8. composite transparent conductive film as claimed in claim 1 or 2, it is characterised in that：Silver alloy conductive layer material is Kufil
The oxide or nitride of gold or aluminium silver alloy, molecular formula AgxB1-xCy, B represents copper Cu or aluminium element Al, and C is represented
Oxygen element O or nitrogen N, x and y represent the percentage of mole total amount, and the scope that the scope of x is 0.9~0.98, y is 0.02
~0.1.
9. composite transparent conductive film as claimed in claim 1 or 2, it is characterised in that：The thickness of the metal conducting layer for 6~
15 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711283048.8A CN108074991A (en) | 2017-12-06 | 2017-12-06 | A kind of composite transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711283048.8A CN108074991A (en) | 2017-12-06 | 2017-12-06 | A kind of composite transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108074991A true CN108074991A (en) | 2018-05-25 |
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| CN109243678A (en) * | 2018-08-23 | 2019-01-18 | 北京载诚科技有限公司 | A kind of composite transparent conductive film |
| CN111477382A (en) * | 2020-04-17 | 2020-07-31 | 中国航发北京航空材料研究院 | Porous metal composite transparent conductive film and preparation method thereof |
| CN111593320A (en) * | 2020-05-22 | 2020-08-28 | 青岛峰峦新材料科技有限责任公司 | Graphene-based transparent flexible conductive film layer and preparation method thereof |
| CN111638610A (en) * | 2020-07-20 | 2020-09-08 | 宁波材料所杭州湾研究院 | Flexible intelligent light adjusting film with high visible light transmittance and heat insulation and preparation method thereof |
| CN113140353A (en) * | 2021-03-11 | 2021-07-20 | 中国乐凯集团有限公司 | Flexible transparent conductive film and preparation method and application thereof |
| CN113161043A (en) * | 2021-04-26 | 2021-07-23 | 中国科学院宁波材料技术与工程研究所 | Ultrathin metal transparent antenna and preparation method thereof |
| CN113223753A (en) * | 2021-05-07 | 2021-08-06 | 江苏华微薄膜科技有限公司 | High-light-transmission low-resistance composite ITO film |
| US11269466B2 (en) | 2020-04-28 | 2022-03-08 | Beijing Zenithnano Technology Co., Ltd. | Touch panels |
| US11269474B2 (en) | 2020-04-28 | 2022-03-08 | Beijing Zenithnano Technology Co., Ltd | Touch devices |
| CN114231903A (en) * | 2021-12-08 | 2022-03-25 | 洛阳理工学院 | Niobium oxide/silver nanowire double-layer structure flexible transparent conductive film and preparation method thereof |
| CN115181311A (en) * | 2022-08-01 | 2022-10-14 | 江苏双星彩塑新材料股份有限公司 | Bacteriostatic internal suspension film |
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| CN113161043A (en) * | 2021-04-26 | 2021-07-23 | 中国科学院宁波材料技术与工程研究所 | Ultrathin metal transparent antenna and preparation method thereof |
| CN113223753A (en) * | 2021-05-07 | 2021-08-06 | 江苏华微薄膜科技有限公司 | High-light-transmission low-resistance composite ITO film |
| CN114231903A (en) * | 2021-12-08 | 2022-03-25 | 洛阳理工学院 | Niobium oxide/silver nanowire double-layer structure flexible transparent conductive film and preparation method thereof |
| CN114231903B (en) * | 2021-12-08 | 2023-09-26 | 洛阳理工学院 | Niobium oxide/silver nanowire double-layer structure flexible transparent conductive film and preparation method thereof |
| CN115181311A (en) * | 2022-08-01 | 2022-10-14 | 江苏双星彩塑新材料股份有限公司 | Bacteriostatic internal suspension film |
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