CN209281907U - A kind of transparent conductive film - Google Patents
A kind of transparent conductive film Download PDFInfo
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- CN209281907U CN209281907U CN201821995215.1U CN201821995215U CN209281907U CN 209281907 U CN209281907 U CN 209281907U CN 201821995215 U CN201821995215 U CN 201821995215U CN 209281907 U CN209281907 U CN 209281907U
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Abstract
The utility model relates to a kind of transparent conductive films comprising transparent substrate and the dielectric layer being cascading on transparent base layer, seed layer, functional layer and protective layer, the functional layer is metal conducting layer, with a thickness of 2-15nm.The utility model forms functional layer by using metal conducting layer, and the thickness of functional layer is arranged in the range of 2-15nm, so that the surface resistance of transparent conductive film is below 10 Ω/㎡, and the thickness of transparent conductive film can't be blocked up, so that the transparent conductive film can be applied on large screen touch screen.
Description
Technical field
The utility model relates to conductive technical field of membrane, and in particular to a kind of transparent conductive film.
Background technique
TCO(Transparent Conductive Oxide) glass, i.e. transparent conductive oxide coated glass are in glass
The method of the used physics in surface or plated film uniformly plates the conductive oxide film of layer of transparent, mainly include In, Sn,
The oxide and its composite multi-component oxide film material of Zn and Cd.
Currently, have industrialization production is generally ITO nesa coating glass in TCO glass.But transparent is conductive
Film glass preparation process complexity is at high cost: firstly, ITO nesa coating glass is that indium oxide (98%) and tin oxide (2%) are compound
Material, indium are rare metals, and material is more expensive, at high cost；Secondly, higher in order to reach when ITO nesa coating glass preparation
Transmitance, it is necessary to glass substrate is heated to 350 DEG C, equipment itself certainly will be put into and maintenance cost greatly increases；Finally,
The surface resistance of ITO nesa coating glass is in 20 Ω/cm2More than, surface resistance is higher, hinders when making 65 cun or more of touch screen
It is anti-big, it touches ineffective, that is to say, that ITO nesa coating glass can not be applied on large screen touch screen.To reduce ITO
The surface resistance of transparent conducting film glass, then its thickness must increase, this undoubtedly increases consumptive material and cost, and technique is also more
Add complexity, thickness, which increases, also will limit its application on large screen touch screen.
Utility model content
In view of the above problems, the purpose of this utility model is to provide a kind of transparent conductive film, the face of the transparent conductive film
Resistance is small, can be applied on large screen touch screen.
In order to achieve the above purposes, the technical solution adopted by the utility model is:
A kind of transparent conductive film comprising transparent substrate and the dielectric layer being cascading on transparent base layer, kind
Sublayer, functional layer and protective layer, the functional layer is metal conducting layer, with a thickness of 2-15nm.
The functional layer is made of one of silver, copper, aluminium or its alloy.
The transparent substrate is transparent glass, PET plastic film or organic glass.
The thickness of dielectric layers 2-45nm, the dielectric layer by titanium oxide, zinc-tin oxide, tin oxide, niobium oxide, aluminium oxide,
One or more of zinc oxide aluminum, silica, zinc oxide, bismuth oxide, silicon nitride are constituted.
The seed layer thickness is 2-40nm, and the seed layer is by zinc oxide aluminum, zinc oxide, zinc-tin oxide, tin oxide
One or more are constituted.
The protective layer thickness is 5-50nm, by one of zinc oxide aluminum, zinc oxide, zinc-tin oxide, tin oxide or
Several compositions.
After adopting the above scheme, the utility model forms functional layer by using metal conducting layer, and by the thickness of functional layer
Degree be arranged in the range of 2-15nm so that the surface resistance of transparent conductive film in 10 Ω/㎡ hereinafter, and transparent conductive film thickness
Can't be blocked up, so that the transparent conductive film can be applied on large screen touch screen.
Moreover, its well conducting, does not need to carry out high temperature recrystallization, institute at normal temperature because functional layer is metal conducting layer
Can be sputtered on transparent substrate by vacuum magnetron sputtering coating film method under conditions of room temperature and form dielectric layer, seed
Layer, functional layer and protective layer, the conductivity for being formed by transparent conductive film is good, and does not need to heat transparent substrate, to subtract
Lack and maintenance cost is put into and reduced to equipment itself.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the transparent conductive film of the utility model；
Fig. 2 is the preparation flow figure of the transparent conductive film of the utility model.
Specific embodiment
As shown in Figure 1, the utility model discloses a kind of transparent conductive film comprising transparent substrate 1 and stack gradually
Dielectric layer 2, seed layer 3, functional layer 4 and protective layer 5 on transparent substrate 1 are set.
Wherein, transparent substrate 1 is transparent glass, PET plastic film or organic glass.Dielectric layer 2 is mainly used to stop
The precipitation of sodium ion in transparent substrate 1, thickness 2-45nm.The dielectric layer 2 is by titanium oxide (TiO2), zinc-tin oxide (ZnSnOx),
Tin oxide (SnO2), niobium oxide (Nb2O3), aluminium oxide (Al2 O3), zinc oxide aluminum (ZnAl2O4), silica (SiO2), zinc oxide
(ZnO2), bismuth oxide (BiO2), silicon nitride (Si3N4) one or more of constitute.Seed layer 3 is mainly used for smooth interface,
With a thickness of 2-40nm.The seed layer 3 is by zinc oxide aluminum (AZO), zinc oxide (ZnO2), zinc-tin oxide (ZnSnOx), tin oxide
(SnO2) one or more of constitute.Functional layer 4 has good electric conductivity, to guarantee the conducting function of transparent conductive film,
The functional layer 4 is metal conducting layer, with a thickness of 2-15nm, by one of silver-colored (Ag), copper (Cu), aluminium (Al) or its alloy structure
At.Protective layer 5 has certain wearability and certain molecule compactness, can protect the scratch resistance antioxygen of transparent conductive film very well
Change performance.The protective layer 5 with a thickness of 5-50nm, by zinc oxide aluminum (AlZO), zinc oxide (ZnO2), zinc-tin oxide
(ZnSnOx), tin oxide (SnO2) one or more of constitute.
As shown in Fig. 2, the preparation method of the transparent conductive film of above structure, specific as follows:
Step 1, by transparent substrate 1 after cleaning, drying, be sent into vacuum magnetic sputter coating line chamber room in progress vacuum
Plated film, the indoor pressure of coating wire chamber are maintained at 5.0*10-6Mbr or more, after being passed through process gas, operating point atmosphere pressures exist
2.5* 10-3Mbr, process gas are argon Ar.
Step 2, under the pressure condition of above-mentioned coating wire chamber, on transparent substrate 1 sputtering sedimentation formed one with a thickness of
The dielectric layer 2 of 2-45nm.
Step 3, dielectric layer 2 sputtering complete after, under the pressure condition of above-mentioned coating wire chamber, on dielectric layer 2
Sputtering sedimentation forms one with a thickness of the seed layer 3 of 2-40nm.
Step 4, seed layer 3 sputtering complete after, under the pressure condition of above-mentioned coating wire chamber, in seed layer 3
Sputtering sedimentation forms one with a thickness of the functional layer 4 of 2-15nm.
Step 5, functional layer 4 sputtering complete after, under the pressure condition of above-mentioned coating wire chamber, in functional layer 4
Sputtering sedimentation formed one with a thickness of 5-50nm protective layer 5 to get arrive transparent conductive film.
Above-mentioned transparent conductive film transmitance >=86%, film surface reflected value 8.5% ~ 9.5%；Color is that muted color approaches white glass；Face
Resistance≤10 Ω/cm2。
The utility model forms functional layer by using metal conducting layer, and the thickness of functional layer is arranged in 2-15nm's
In range so that the surface resistance of transparent conductive film in 10 Ω/㎡ hereinafter, and the thickness of transparent conductive film can't be blocked up so that
The transparent conductive film can be applied on large screen touch screen.
Moreover, the utility model transparent conductive film during the preparation process because functional layer be metal conducting layer, in room temperature
Its lower well conducting does not need to carry out high temperature recrystallization, so, vacuum magnetron sputtering coating film can be passed through under conditions of room temperature
Method sputters on transparent substrate 2 and forms dielectric layer 2, seed layer 3, functional layer 4 and protective layer 5, is formed by transparent conductive film
Conductivity it is good, and do not need to heat transparent substrate 1, thus reduce equipment itself is put into and is reduced maintenance at
This.
For detailed above content, five embodiments will be enumerated below, the utility model will be illustrated, specifically such as 1 institute of table
Show.
Table 1
As known from Table 1, the transparent conductive film of the utility model conducts electricity very well, and surface resistance≤10 Ω/cm2。
The above is only the utility model embodiment, not makees any limit to the technical scope of the utility model
System, thus any trickle amendment made by the above technical examples according to the technical essence of the present invention, equivalent variations with repair
Decorations, are still within the scope of the technical solutions of the present invention.
Claims (6)
1. a kind of transparent conductive film, it is characterised in that: including transparent substrate and Jie on transparent base layer that is cascading
Matter layer, seed layer, functional layer and protective layer, the functional layer is metal conducting layer, with a thickness of 2-15nm.
2. a kind of transparent conductive film according to claim 1, it is characterised in that: the functional layer is by one in silver, copper, aluminium
Kind is constituted.
3. a kind of transparent conductive film according to claim 1, it is characterised in that: the transparent substrate is transparent glass, PET
Plastic film or organic glass.
4. a kind of transparent conductive film according to claim 1, it is characterised in that: the thickness of dielectric layers 2-45nm, Jie
Matter layer is by titanium oxide, zinc-tin oxide, tin oxide, niobium oxide, aluminium oxide, zinc oxide aluminum, silica, zinc oxide, bismuth oxide, nitridation
One of silicon is constituted.
5. a kind of transparent conductive film according to claim 1, it is characterised in that: the seed layer thickness is 2-40nm, should
Seed layer is made of one of zinc oxide aluminum, zinc oxide, zinc-tin oxide, tin oxide.
6. a kind of transparent conductive film according to claim 1, it is characterised in that: the protective layer thickness is 5-50nm,
It is made of one of zinc oxide aluminum, zinc oxide, zinc-tin oxide, tin oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821995215.1U CN209281907U (en) | 2018-11-30 | 2018-11-30 | A kind of transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821995215.1U CN209281907U (en) | 2018-11-30 | 2018-11-30 | A kind of transparent conductive film |
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| CN209281907U true CN209281907U (en) | 2019-08-20 |
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| CN201821995215.1U Active CN209281907U (en) | 2018-11-30 | 2018-11-30 | A kind of transparent conductive film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109461518A (en) * | 2018-11-30 | 2019-03-12 | 明达光电(厦门)有限公司 | A kind of transparent conductive film and preparation method thereof |
-
2018
- 2018-11-30 CN CN201821995215.1U patent/CN209281907U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109461518A (en) * | 2018-11-30 | 2019-03-12 | 明达光电(厦门)有限公司 | A kind of transparent conductive film and preparation method thereof |
| WO2020107896A1 (en) * | 2018-11-30 | 2020-06-04 | 明达光电(厦门)有限公司 | Transparent conductive film and preparation method therefor |
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