CN109461518A - A kind of transparent conductive film and preparation method thereof - Google Patents
A kind of transparent conductive film and preparation method thereof Download PDFInfo
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- CN109461518A CN109461518A CN201811451109.1A CN201811451109A CN109461518A CN 109461518 A CN109461518 A CN 109461518A CN 201811451109 A CN201811451109 A CN 201811451109A CN 109461518 A CN109461518 A CN 109461518A
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- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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Abstract
The present invention relates to a kind of transparent conductive films and preparation method thereof; wherein, transparent conductive film, including transparent substrate and the dielectric layer being cascading on transparent base layer, seed layer, functional layer and protective layer; the functional layer is metal conducting layer, with a thickness of 2-15nm.The present invention forms functional layer by using metal conducting layer, and the thickness of functional layer is arranged in the range of 2-15nm, so that the surface resistance of transparent conductive film in 10 Ω/㎡ hereinafter, and the thickness of transparent conductive film can't be blocked up so that the transparent conductive film can be applied on large screen touch screen.
Description
Technical field
The present invention relates to conductive technical field of membrane, and in particular to a kind of transparent conductive film and preparation method thereof.
Background technique
TCO(Transparent Conductive Oxide) glass, i.e. transparent conductive oxide coated glass are in glass
The method of the used physics in surface or plated film uniformly plates the conductive oxide film of layer of transparent, mainly include In, Sn,
The oxide and its composite multi-component oxide film material of Zn and Cd.
Currently, have industrialization production is generally ITO nesa coating glass in TCO glass.But transparent is conductive
Film glass preparation process complexity is at high cost: firstly, ITO nesa coating glass is that indium oxide (98%) and tin oxide (2%) are compound
Material, indium are rare metals, and material is more expensive, at high cost；Secondly, higher in order to reach when ITO nesa coating glass preparation
Transmitance, it is necessary to glass substrate is heated to 350 DEG C, equipment itself certainly will be put into and maintenance cost greatly increases；Finally,
The surface resistance of ITO nesa coating glass is in 20 Ω/cm2More than, surface resistance is higher, hinders when making 65 cun or more of touch screen
It is anti-big, it touches ineffective, that is to say, that ITO nesa coating glass can not be applied on large screen touch screen.To reduce ITO
The surface resistance of transparent conducting film glass, then its thickness must increase, this undoubtedly increases consumptive material and cost, and technique is also more
Add complexity, thickness, which increases, also will limit its application on large screen touch screen.
Summary of the invention
In view of the above problems, the purpose of the present invention is to provide a kind of transparent conductive film and preparation method thereof, this is transparent to be led
The surface resistance of electrolemma is small, can be applied on large screen touch screen.
To achieve the above object, the technical solution adopted by the present invention is that:
A kind of transparent conductive film comprising transparent substrate and the dielectric layer being cascading on transparent base layer, seed layer,
Functional layer and protective layer, the functional layer is metal conducting layer, with a thickness of 2-15nm.
The functional layer is made of one of silver, copper, aluminium or its alloy.
The transparent substrate is transparent glass, PET plastic film or organic glass.
The thickness of dielectric layers 2-45nm, the dielectric layer by titanium oxide, zinc-tin oxide, tin oxide, niobium oxide, aluminium oxide,
One or more of zinc oxide aluminum, silica, zinc oxide, bismuth oxide, silicon nitride are constituted.
The seed layer thickness is 2-40nm, and the seed layer is by zinc oxide aluminum, zinc oxide, zinc-tin oxide, tin oxide
One or more are constituted.
The protective layer thickness is 5-50nm, by one of zinc oxide aluminum, zinc oxide, zinc-tin oxide, tin oxide or
Several compositions.
A method of preparing above-mentioned transparent conductive film comprising following steps:
Step 1, by transparent substrate after cleaning, drying, be sent into vacuum magnetic sputter coating line chamber room in carry out plated film of taking advantage of the occasion,
The indoor pressure of coating wire chamber is maintained at 5.0*10-6Mbr or more, after being passed through process gas, operating point atmosphere pressures are in 2.5*
10-3mbr；
Step 2, under the pressure condition of above-mentioned coating wire chamber, sputtering sedimentation is formed one with a thickness of 2-45nm on transparent substrate
Dielectric layer；
Step 3, after dielectric layer sputtering is completed, under the pressure condition of above-mentioned coating wire chamber, it is heavy to sputter on dielectric layer
Product forms one with a thickness of the seed layer of 2-40nm；
Step 4, after seed layer sputtering is completed, under the pressure condition of above-mentioned coating wire chamber, sputtering is heavy on the seed layer
Product forms one with a thickness of the functional layer of 2-15nm；
Step 5, after functional layer sputtering is completed, under the pressure condition of above-mentioned coating wire chamber, sputtering is heavy on a functional
Product formed one with a thickness of 5-50nm protective layer to get arrive transparent conductive film.
After adopting the above scheme, the present invention forms functional layer by using metal conducting layer, and the thickness of functional layer is set
Set in the range of 2-15nm so that the surface resistance of transparent conductive film in 10 Ω/㎡ hereinafter, and transparent conductive film thickness not
Can be blocked up, so that the transparent conductive film can be applied on large screen touch screen.
Moreover, its well conducting, does not need to carry out high temperature recrystallization, institute at normal temperature because functional layer is metal conducting layer
Can be sputtered on transparent substrate by vacuum magnetron sputtering coating film method under conditions of room temperature and form dielectric layer, seed
Layer, functional layer and protective layer, the conductivity for being formed by transparent conductive film is good, and does not need to heat transparent substrate, to subtract
Lack and maintenance cost is put into and reduced to equipment itself.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the transparent conductive film of the present invention；
Fig. 2 is the preparation flow figure of the transparent conductive film of the present invention.
Specific embodiment
As shown in Figure 1, present invention discloses a kind of transparent conductive films comprising transparent substrate 1 and be cascading
Dielectric layer 2, seed layer 3, functional layer 4 and protective layer 5 on transparent substrate 1.
Wherein, transparent substrate 1 is transparent glass, PET plastic film or organic glass.Dielectric layer 2 is mainly used to stop
The precipitation of sodium ion in transparent substrate 1, thickness 2-45nm.The dielectric layer 2 is by titanium oxide (TiO2), zinc-tin oxide (ZnSnOx),
Tin oxide (SnO2), niobium oxide (Nb2O3), aluminium oxide (Al2 O3), zinc oxide aluminum (ZnAl2O4), silica (SiO2), zinc oxide
(ZnO2), bismuth oxide (BiO2), silicon nitride (Si3N4) one or more of constitute.Seed layer 3 is mainly used for smooth interface,
With a thickness of 2-40nm.The seed layer 3 is by zinc oxide aluminum (AZO), zinc oxide (ZnO2), zinc-tin oxide (ZnSnOx), tin oxide
(SnO2) one or more of constitute.Functional layer 4 has good electric conductivity, to guarantee the conducting function of transparent conductive film,
The functional layer 4 is metal conducting layer, with a thickness of 2-15nm, by one of silver-colored (Ag), copper (Cu), aluminium (Al) or its alloy structure
At.Protective layer 5 has certain wearability and certain molecule compactness, can protect the scratch resistance antioxygen of transparent conductive film very well
Change performance.The protective layer 5 with a thickness of 5-50nm, by zinc oxide aluminum (AlZO), zinc oxide (ZnO2), zinc-tin oxide
(ZnSnOx), tin oxide (SnO2) one or more of constitute.
As shown in Fig. 2, present invention further teaches the preparation method of the transparent conductive film of above structure, it is specific as follows:
Step 1, by transparent substrate 1 after cleaning, drying, be sent into vacuum magnetic sputter coating line chamber room in progress vacuum coating,
The indoor pressure of coating wire chamber is maintained at 5.0*10-6Mbr or more, after being passed through process gas, operating point atmosphere pressures are in 2.5*
10-3Mbr, process gas are argon Ar.
Step 2, under the pressure condition of above-mentioned coating wire chamber, on transparent substrate 1 sputtering sedimentation formed one with a thickness of
The dielectric layer 2 of 2-45nm.
Step 3, dielectric layer 2 sputtering complete after, under the pressure condition of above-mentioned coating wire chamber, on dielectric layer 2
Sputtering sedimentation forms one with a thickness of the seed layer 3 of 2-40nm.
Step 4, seed layer 3 sputtering complete after, under the pressure condition of above-mentioned coating wire chamber, in seed layer 3
Sputtering sedimentation forms one with a thickness of the functional layer 4 of 2-15nm.
Step 5, functional layer 4 sputtering complete after, under the pressure condition of above-mentioned coating wire chamber, in functional layer 4
Sputtering sedimentation formed one with a thickness of 5-50nm protective layer 5 to get arrive transparent conductive film.
Above-mentioned transparent conductive film transmitance >=86%, film surface reflected value 8.5% ~ 9.5%；Color is that muted color approaches white glass；Face
Resistance≤10 Ω/cm2。
The present invention forms functional layer by using metal conducting layer, and the thickness of functional layer is arranged in the range of 2-15nm
It is interior so that the surface resistance of transparent conductive film in 10 Ω/㎡ hereinafter, and the thickness of transparent conductive film can't be blocked up so that this is thoroughly
Bright conductive film can be applied on large screen touch screen.
Moreover, the present invention transparent conductive film during the preparation process because functional layer be metal conducting layer, at normal temperature its
Well conducting does not need to carry out high temperature recrystallization, so, vacuum magnetron sputtering coating film method can be passed through under conditions of room temperature
Sputtering forms dielectric layer 2, seed layer 3, functional layer 4 and protective layer 5 on transparent substrate 2, is formed by leading for transparent conductive film
Electric rate is good, and does not need to heat transparent substrate 1, and maintenance cost is put into and reduced to equipment itself to reduce.
For detailed above content, enumerating five below, examples illustrate the present invention, specific as shown in table 1.
Table 1
As known from Table 1, transparent conductive film of the invention conducts electricity very well, and surface resistance≤10 Ω/cm2。
The above is only the embodiment of the present invention, is not intended to limit the scope of the present invention, therefore all
Any subtle modifications, equivalent variations and modifications to the above embodiments according to the technical essence of the invention still fall within this
In the range of inventive technique scheme.
Claims (7)
1. a kind of transparent conductive film, it is characterised in that: including transparent substrate and Jie on transparent base layer that is cascading
Matter layer, seed layer, functional layer and protective layer, the functional layer is metal conducting layer, with a thickness of 2-15nm.
2. a kind of transparent conductive film according to claim 1, it is characterised in that: the functional layer is by one in silver, copper, aluminium
Kind or its alloy are constituted.
3. a kind of transparent conductive film according to claim 1, it is characterised in that: the transparent substrate is transparent glass, PET
Plastic film or organic glass.
4. a kind of transparent conductive film according to claim 1, it is characterised in that: the thickness of dielectric layers 2-45nm, Jie
Matter layer is by titanium oxide, zinc-tin oxide, tin oxide, niobium oxide, aluminium oxide, zinc oxide aluminum, silica, zinc oxide, bismuth oxide, nitridation
One or more of silicon is constituted.
5. a kind of transparent conductive film according to claim 1, it is characterised in that: the seed layer thickness is 2-40nm, should
Seed layer is made of one or more of zinc oxide aluminum, zinc oxide, zinc-tin oxide, tin oxide.
6. a kind of transparent conductive film according to claim 1, it is characterised in that: the protective layer thickness is 5-50nm,
It is made of one or more of zinc oxide aluminum, zinc oxide, zinc-tin oxide, tin oxide.
7. a kind of method for preparing the transparent conductive film as described in claim 1 to 6 is any, it is characterised in that: the preparation side
Method the following steps are included:
Step 1, by transparent substrate after cleaning, drying, be sent into vacuum magnetic sputter coating line chamber room in progress vacuum coating,
The indoor pressure of coating wire chamber is maintained at 5.0*10-6Mbr or more, after being passed through process gas, operating point atmosphere pressures are in 2.5*
10-3mbr；
Step 2, under the pressure condition of above-mentioned coating wire chamber, sputtering sedimentation is formed one with a thickness of 2-45nm on transparent substrate
Dielectric layer；
Step 3, after dielectric layer sputtering is completed, under the pressure condition of above-mentioned coating wire chamber, it is heavy to sputter on dielectric layer
Product forms one with a thickness of the seed layer of 2-40nm；
Step 4, after seed layer sputtering is completed, under the pressure condition of above-mentioned coating wire chamber, sputtering is heavy on the seed layer
Product forms one with a thickness of the functional layer of 2-15nm；
Step 5, after functional layer sputtering is completed, under the pressure condition of above-mentioned coating wire chamber, sputtering is heavy on a functional
Product formed one with a thickness of 5-50nm protective layer to get arrive transparent conductive film.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811451109.1A CN109461518A (en) | 2018-11-30 | 2018-11-30 | A kind of transparent conductive film and preparation method thereof |
| PCT/CN2019/096449 WO2020107896A1 (en) | 2018-11-30 | 2019-07-18 | Transparent conductive film and preparation method therefor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811451109.1A CN109461518A (en) | 2018-11-30 | 2018-11-30 | A kind of transparent conductive film and preparation method thereof |
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| CN109461518A true CN109461518A (en) | 2019-03-12 |
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| CN201811451109.1A Pending CN109461518A (en) | 2018-11-30 | 2018-11-30 | A kind of transparent conductive film and preparation method thereof |
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| WO (1) | WO2020107896A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110432702A (en) * | 2019-08-12 | 2019-11-12 | 明达光电(厦门)有限公司 | A kind of air mattress stable using position |
| CN113595525A (en) * | 2021-07-22 | 2021-11-02 | 中国电子科技集团公司第二十六研究所 | Radio frequency surface acoustic wave filter |
| CN114005604A (en) * | 2021-12-16 | 2022-02-01 | 西湖大学 | Preparation method of conductive film and conductive film |
| CN114596776A (en) * | 2022-02-28 | 2022-06-07 | 京东方杰恩特喜科技有限公司 | Glass cover plate, display screen assembly, electronic equipment and glass cover plate processing method |
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| CN101697288A (en) * | 2009-10-13 | 2010-04-21 | 福建师范大学 | Transparent conductive film of metal silver/metal oxide and preparation method thereof |
| CN102474999A (en) * | 2009-08-03 | 2012-05-23 | 3M创新有限公司 | Process for forming optically clear conductive metal or metal alloy thin films and films made therefrom |
| CN105130209A (en) * | 2015-07-22 | 2015-12-09 | 赛柏利安工业技术（苏州）有限公司 | High-transmittance low-cost color-adjustable low-radiation energy-saving glass and preparation method thereof |
| CN209281907U (en) * | 2018-11-30 | 2019-08-20 | 明达光电(厦门)有限公司 | A kind of transparent conductive film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US11453823B2 (en) * | 2017-02-20 | 2022-09-27 | InkTee Co., Ltd. | Method for manufacturing transfer film including seed layer, method for manufacturing circuit board by selectively etching seed layer, and etching solution composite |
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2018
- 2018-11-30 CN CN201811451109.1A patent/CN109461518A/en active Pending
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2019
- 2019-07-18 WO PCT/CN2019/096449 patent/WO2020107896A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102474999A (en) * | 2009-08-03 | 2012-05-23 | 3M创新有限公司 | Process for forming optically clear conductive metal or metal alloy thin films and films made therefrom |
| CN101697288A (en) * | 2009-10-13 | 2010-04-21 | 福建师范大学 | Transparent conductive film of metal silver/metal oxide and preparation method thereof |
| CN105130209A (en) * | 2015-07-22 | 2015-12-09 | 赛柏利安工业技术（苏州）有限公司 | High-transmittance low-cost color-adjustable low-radiation energy-saving glass and preparation method thereof |
| CN209281907U (en) * | 2018-11-30 | 2019-08-20 | 明达光电(厦门)有限公司 | A kind of transparent conductive film |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110432702A (en) * | 2019-08-12 | 2019-11-12 | 明达光电(厦门)有限公司 | A kind of air mattress stable using position |
| CN113595525A (en) * | 2021-07-22 | 2021-11-02 | 中国电子科技集团公司第二十六研究所 | Radio frequency surface acoustic wave filter |
| CN114005604A (en) * | 2021-12-16 | 2022-02-01 | 西湖大学 | Preparation method of conductive film and conductive film |
| CN114005604B (en) * | 2021-12-16 | 2024-04-30 | 西湖大学 | Preparation method of conductive film and conductive film |
| CN114596776A (en) * | 2022-02-28 | 2022-06-07 | 京东方杰恩特喜科技有限公司 | Glass cover plate, display screen assembly, electronic equipment and glass cover plate processing method |
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| Publication number | Publication date |
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| WO2020107896A1 (en) | 2020-06-04 |
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