CN101429640A - Transparent conductive film production method - Google Patents

Transparent conductive film production method Download PDF

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Publication number
CN101429640A
CN101429640A CNA2008101199816A CN200810119981A CN101429640A CN 101429640 A CN101429640 A CN 101429640A CN A2008101199816 A CNA2008101199816 A CN A2008101199816A CN 200810119981 A CN200810119981 A CN 200810119981A CN 101429640 A CN101429640 A CN 101429640A
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China
Prior art keywords
nesa coating
transparent conductive
conductive film
preparation
film
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CNA2008101199816A
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Chinese (zh)
Inventor
张云龙
徐健
程云立
承高建
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Dongfang New Material Science And Technology Co Ltd Beijing
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Dongfang New Material Science And Technology Co Ltd Beijing
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Priority to CNA2008101199816A priority Critical patent/CN101429640A/en
Publication of CN101429640A publication Critical patent/CN101429640A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a preparation method for a transparent conductive film. Through the deposition on a transparent base plate in a physical vapor deposition mode, the preparation method prepares a multilayer film consisting of at least a transparent conductive film layer with a high refractive rate and at least a transparent conductive film layer with a low refractive rate; and the transparent conductive film layers are alternated. The visible light transmission rate of the transparent conductive film is improved through the multilayer film consisting of alternated high-refractive-rate films and low-refractive-rate films. Moreover, the multilayer transparent conductive film can have greater thickness and can have lower square resistance under the condition of higher resistivity.

Description

A kind of preparation method of nesa coating
Technical field
The present invention relates to the preparation method of the nesa coating that a kind of square resistance is low, visible light transmissivity is high.
Background technology
Nesa coating is widely used in fields such as touch-screen, liquid crystal.For the requirement of nesa coating be that square resistance is low as much as possible, average transmittances in the visible-range is high as much as possible.
The substrate that nesa coating uses generally is glass or organic film, and its specific refractory power is between 1.5-1.6.And the most specific refractory power of common nesa coating is higher, as ITO (In 2O 3: be 1.9 Sn), IZO (Zn 2In 2O 5) be 2.4.CAO (the CuAlO that specific refractory power is lower 2) be 1.54, but the problem that CAO exists to be resistivity too high and need high temperature annealing, therefore be difficult to realize industrialization.Because the specific refractory power of nesa coating is higher than substrate, and nesa coating need be at the outermost layer of rete, and therefore from the optical angle, transmitance whole behind the nesa coating that is coated with individual layer on the substrate can reduce.Fig. 1 has provided and prepared the variation of the visible light transmissivity of ITO and IZO nesa coating with thicknesses of layers on the PET transparency carrier.The transmitance of nesa coating presents in various degree decline with the increase of thicknesses of layers as can be seen, and the film material specific refractory power when higher (as the IZO among Fig. 1) this phenomenon more obvious.
For the visible light transmissivity that improves nesa coating can adopt the optics anti-reflection layer, promptly between substrate and nesa coating, added high refractive index film and (generally adopted TiO 2, n=2.5) and low refractive index film (generally adopt SiO 2, n=1.5) alternate multilayer film.And higher or when requiring lower square resistance when the resistivity of nesa coating, then need plate outermost nesa coating thicker.In this case, utilize conventional antireflective film also to be difficult to obtain higher visible light transmissivity.
Summary of the invention:
The object of the present invention is to provide a kind of preparation method of nesa coating.The nesa coating that this preparation method prepares has higher transmittance in visible-range, nesa coating can have thicker thickness simultaneously, still can provide less square resistance under the lower situation of the resistivity of nesa coating.
To achieve these goals, method provided by the invention is: on transparency carrier with physical vapor deposition mode deposit multilayer nesa coating.
Wherein, described multi-layer transparent conductive film by at least one floor height refractivity film layer and at least one deck low-index film alternately form.
Described transparency carrier comprises glass or polyethylene terephthalate (PET).
Described physical vapor deposition mode comprises sputter mode and evaporation mode.
Can deposit one deck blocking layer or buffer layer between described transparency carrier and the multi-layer transparent conductive film.
The multilayer film that utilization of the present invention alternately is made up of the nesa coating of the nesa coating of high refractive index and low-refraction improves the transmitance of visible light, simultaneously the multiwalled nesa coating can have thicker thickness, has at nesa coating under the situation of higher electric resistivity and still lower square resistance can be arranged.
Description of drawings
Fig. 1 is the change curve of the visible light transmissivity of the ITO for preparing on the PET transparency carrier and IZO nesa coating with thicknesses of layers;
Fig. 2 is the structural representation through the nesa coating of embodiments of the invention 1 preparation;
Fig. 3 is the structural representation through the nesa coating of embodiments of the invention 2 preparations;
Fig. 4 is the structural representation through the nesa coating of Comparative Examples 1 preparation of the present invention;
Fig. 5 is the structural representation through the nesa coating of Comparative Examples 2 preparations of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described.
Embodiment 1:
As shown in Figure 2, substrate is a PET film 1, and thickness is 125 microns, and average transmittances is 91.1% in the visible-range.Adopt the sputter mode to deposit buffer layer (silicon dioxide film 2 successively, thickness is 4 nanometers), low-refraction nesa coating (ITO film 3, thickness is 67 nanometers), high refractive index transparent conducting film (IZO film 4, thickness is 57 nanometers), low-refraction nesa coating (ITO film 5, thickness are 70 nanometers).The square resistance of the nesa coating of this method preparation is 52 ohm, and the average transmittances in the visible-range is 90.4%.
Embodiment 2:
As shown in Figure 3, substrate is a PET film 11, and thickness is 125 microns, and average transmittances is 91.1% in the visible-range.Adopt the sputter mode to deposit buffer layer (silicon dioxide film 12 successively, thickness is 4 nanometers), high refractive index transparent conducting film (IZO film 13, thickness is 5 nanometers), low-refraction nesa coating (ITO film 14, thickness is 56 nanometers), high refractive index transparent conducting film (IZO film 15, thickness is 57 nanometers), low-refraction nesa coating (ITO film 16, thickness are 71 nanometers).The square resistance of the nesa coating of this method preparation is 53 ohm, and the average transmittances in the visible-range is 90.5%.
Comparative Examples 1:
As shown in Figure 4, substrate is a PET film 21, and thickness is 125 microns, and average transmittances is 91.1% in the visible-range.Adopt the sputter mode to deposit buffer layer (silicon dioxide film 22, thickness are 4 nanometers), nesa coating (ITO film 23, thickness are 71 nanometers) successively.The square resistance of the nesa coating of this method preparation is 53 ohm, and the average transmittances in the visible-range is 85.2%.
Comparative Examples 2:
As shown in Figure 5, substrate is a PET film 31, and thickness is 125 microns, and average transmittances is 91.1% in the visible-range.Adopt the sputter mode to deposit low refractive index film (silicon dioxide film 32 successively, thickness is 30 nanometers), high refractive index film (titanium dioxide film 33, thickness is 9 nanometers), low refractive index film (silicon dioxide film 34, thickness are 32 nanometers), nesa coating (ITO film 35, thickness are 190 nanometers).The square resistance of the nesa coating of this method preparation is 53 ohm, and the average transmittances in the visible-range is 86.0%.
Realize anti-reflection through embodiment 1 and embodiment 2 by the multiwalled nesa coating, visible light transmissivity is greater than 90%.The nesa coating that has prepared individual layer in the Comparative Examples 1, the nesa coating total thickness among its thickness and the embodiment is roughly suitable, but its visible light transmissivity has only 85.2%.Comparative Examples 2 improves visible light transmissivity by adding the multilayer antireflective film on the basis of Comparative Examples 1, make the transmitance of nesa coating reach 86.0%, and its effect is very limited.

Claims (5)

  1. The preparation method of the nesa coating that 1, a kind of square resistance is low, visible light transmissivity is high: on transparency carrier with physical vapor deposition mode deposit multilayer nesa coating.
  2. 2, preparation method according to claim 1, wherein, described multi-layer transparent conductive film by at least one floor height specific refractory power nesa coating and at least one deck low-refraction nesa coating alternately form.
  3. 3, preparation method according to claim 1, wherein, described transparency carrier comprises glass or polyethylene terephthalate (PET).
  4. 4, preparation method according to claim 1, wherein, described physical vapor deposition mode comprises sputter mode and evaporation mode.
  5. 5, according to any described preparation method of claim 1-4, wherein, can deposit one deck blocking layer or buffer layer between described transparency carrier and the multi-layer transparent conductive film.
CNA2008101199816A 2008-10-21 2008-10-21 Transparent conductive film production method Pending CN101429640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2008101199816A CN101429640A (en) 2008-10-21 2008-10-21 Transparent conductive film production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2008101199816A CN101429640A (en) 2008-10-21 2008-10-21 Transparent conductive film production method

Publications (1)

Publication Number Publication Date
CN101429640A true CN101429640A (en) 2009-05-13

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102682805A (en) * 2011-02-09 2012-09-19 Tdk股份有限公司 Multilayer optical recording medium
CN102674707A (en) * 2011-03-14 2012-09-19 无锡康力电子有限公司 Transparent conductive glass
CN103257779A (en) * 2012-05-22 2013-08-21 光驰科技(上海)有限公司 A capacitive touch screen substrate and a manufacture method and a manufacture device thereof
CN103474544A (en) * 2012-06-07 2013-12-25 清华大学 Semiconductor structure
CN103474547A (en) * 2012-06-07 2013-12-25 清华大学 Light emitting diode
CN103488369A (en) * 2013-09-17 2014-01-01 芜湖长信科技股份有限公司 Touch screen without chromatic aberration and method for manufacturing touch screen
CN104616726A (en) * 2014-12-17 2015-05-13 青岛墨烯产业科技有限公司 Indium-free transparent electrode and preparation method thereof
CN105892731A (en) * 2014-10-29 2016-08-24 祥达光学（厦门）有限公司 Touch screen
CN103474544B (en) * 2012-06-07 2016-11-30 清华大学 Semiconductor structure
CN107482039A (en) * 2017-08-03 2017-12-15 京东方科技集团股份有限公司 A kind of flexible touch-control motherboard and preparation method, flexible touch base plate, contact panel
CN110794632A (en) * 2019-12-06 2020-02-14 深圳市康盛光电科技有限公司 ITO handwriting film for color handwriting board and preparation method thereof
CN111094206A (en) * 2017-08-04 2020-05-01 维特罗平板玻璃有限责任公司 Transparent conductive oxide with embedded film
CN112981353A (en) * 2019-12-13 2021-06-18 中国科学院大连化学物理研究所 Method for eliminating film stress

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102682805A (en) * 2011-02-09 2012-09-19 Tdk股份有限公司 Multilayer optical recording medium
CN102674707A (en) * 2011-03-14 2012-09-19 无锡康力电子有限公司 Transparent conductive glass
CN103257779A (en) * 2012-05-22 2013-08-21 光驰科技(上海)有限公司 A capacitive touch screen substrate and a manufacture method and a manufacture device thereof
CN103474544A (en) * 2012-06-07 2013-12-25 清华大学 Semiconductor structure
CN103474547A (en) * 2012-06-07 2013-12-25 清华大学 Light emitting diode
CN103474544B (en) * 2012-06-07 2016-11-30 清华大学 Semiconductor structure
CN103474547B (en) * 2012-06-07 2016-06-29 清华大学 Light emitting diode
CN103488369A (en) * 2013-09-17 2014-01-01 芜湖长信科技股份有限公司 Touch screen without chromatic aberration and method for manufacturing touch screen
CN105892731A (en) * 2014-10-29 2016-08-24 祥达光学（厦门）有限公司 Touch screen
CN105892731B (en) * 2014-10-29 2019-05-28 祥达光学（厦门）有限公司 Touch Screen
CN104616726A (en) * 2014-12-17 2015-05-13 青岛墨烯产业科技有限公司 Indium-free transparent electrode and preparation method thereof
CN107482039A (en) * 2017-08-03 2017-12-15 京东方科技集团股份有限公司 A kind of flexible touch-control motherboard and preparation method, flexible touch base plate, contact panel
CN111094206A (en) * 2017-08-04 2020-05-01 维特罗平板玻璃有限责任公司 Transparent conductive oxide with embedded film
CN111094206B (en) * 2017-08-04 2022-08-19 维特罗平板玻璃有限责任公司 Transparent conductive oxide with embedded film
US11881326B2 (en) 2017-08-04 2024-01-23 Vitro Flat Glass Llc Transparent conductive oxide having an embedded film
CN110794632A (en) * 2019-12-06 2020-02-14 深圳市康盛光电科技有限公司 ITO handwriting film for color handwriting board and preparation method thereof
CN112981353A (en) * 2019-12-13 2021-06-18 中国科学院大连化学物理研究所 Method for eliminating film stress

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Open date: 20090513