CN204834602U - Package assembly of big power semiconductor and radiator - Google Patents
Package assembly of big power semiconductor and radiator Download PDFInfo
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- CN204834602U CN204834602U CN201520638590.0U CN201520638590U CN204834602U CN 204834602 U CN204834602 U CN 204834602U CN 201520638590 U CN201520638590 U CN 201520638590U CN 204834602 U CN204834602 U CN 204834602U
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Abstract
The utility model relates to a package assembly of big power semiconductor and radiator, includes: big power semiconductor module, big power semiconductor module includes printed circuit board and sets up the big power semiconductor component on printed circuit board, the radiator, the radiator has two at least main heat radiation fins, big power semiconductor module setting is between adjacent two main heat radiation fins, the clearance filling layer, the clearance filling layer sets up between big power semiconductor module and the main heat radiation fins, the clearance filling layer is hugged closely with main heat radiation fins's surface. In this patent application, in the accommodation space that forms big power semiconductor module setting between the main heat radiation fins of radiator to setting up the clearance filling layer between big power semiconductor module and main heat radiation fins, conducting to the main heat radiation fins of radiator of making that the produced heat of big power semiconductor module can be quick is gone up through the quick outdiffusion of main heat radiation fins.
Description
Technical field
Present patent application relates to the package assembly of power semiconductor and radiator, more particularly, relates to the package assembly of a kind of high power semi-conductor and radiator.
Background technology
High power semiconductor component operationally, can produce thermal losses, if caloric value is too large, has little time again medium towards periphery and dissipates, will Yin Wendu too high and lost efficacy.In order to avoid high power semiconductor component temperature is too high, generally can increase radiator to accelerate heat radiation, but with the raising of work power density, the heat that high power semiconductor component produces is increasing, the package assembly of existing high power semi-conductor and radiator is difficult to meet heat radiation needs, and pole needs more efficiently radiator structure.
content of the patent
The object of present patent application is the package assembly providing a kind of high power semi-conductor and radiator, dissipates, avoid the normal work affecting high power semiconductor component because temperature is too high with the heat conduction produced by high power semiconductor component in time.
On the one hand, the high power semi-conductor of present patent application and the package assembly of radiator comprise:
First power semiconductor modular, described first power semiconductor modular comprises printed circuit board (PCB), and is arranged on the high power semiconductor component on the first surface of printed circuit board (PCB);
Second largest power semiconductor modular, described second largest power semiconductor modular comprises printed circuit board (PCB), and is arranged on the high power semiconductor component on the first surface of printed circuit board (PCB);
Radiator, described radiator has at least three main radiating fins, and described first power semiconductor modular and second largest power semiconductor modular are separately positioned between adjacent two main radiating fins;
Gap filling layer, described gap filling layer is arranged between described first power semiconductor modular and main radiating fin and between described second largest power semiconductor modular and main radiating fin, and the surface of described gap filling layer and main radiating fin is close to.
On the other hand, the high power semi-conductor of present patent application and the package assembly of radiator comprise:
High-power semiconductor module, described high-power semiconductor module comprises printed circuit board (PCB) and is arranged on the high power semiconductor component on the first surface of printed circuit board (PCB) and second;
Radiator, described radiator has at least two main radiating fins, and described high-power semiconductor module is arranged between adjacent two main radiating fins;
Gap filling layer, described gap filling layer is arranged between described high-power semiconductor module and main radiating fin, and the surface of described gap filling layer and main radiating fin is close to.
In an embodiment of the application, described high power semiconductor component is surface-pasted semiconductor.
In an embodiment of the application, described high power semiconductor component is mounted on the printed circuit board by surface mounting technology.
In an embodiment of the application, described printed circuit board (PCB) is provided with the connector for being electrically connected or connecting hole.
In an embodiment of the application, described gap filling layer has thermal conductivity and flexibility.
In an embodiment of the application, the coated described high-power semiconductor module of described gap filling layer.
In an embodiment of the application, described radiator is made by a metalwork or is combined by the metalwork of more than.
In an embodiment of the application, the top of the encapsulation of described high power semiconductor component be level be fixed with metal conducting strip, described metal conducting strip is electrically connected with the pin having big current to circulate of described high power semiconductor component.
Implement the high power semi-conductor of present patent application and the package assembly of radiator, there is following beneficial effect: in the present patent application, owing to high-power semiconductor module being arranged in the accommodation space that formed between the main radiating fin of radiator, and gap filling layer is set between high-power semiconductor module and main radiating fin, on the main radiating fin that the heat enabling high-power semiconductor module produce conducts to radiator fast and by main radiating fin fast to outdiffusion.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, present patent application is described further, in accompanying drawing:
Fig. 1 is the schematic diagram of the drive circuit of three-phase brushless motor;
Fig. 2 is the schematic diagram of the first embodiment of the high power semi-conductor of present patent application and the package assembly of radiator;
Fig. 3 is the principle schematic of the package assembly of the high power semi-conductor shown in Fig. 2 and radiator;
Fig. 4 is the decomposing schematic representation of the package assembly of the high power semi-conductor shown in Fig. 2 and radiator;
Fig. 5 is the decomposing schematic representation of another angle of the package assembly of the high power semi-conductor shown in Fig. 2 and radiator;
Fig. 6 is the schematic diagram of the second embodiment of the high power semi-conductor of present patent application and the package assembly of radiator;
Fig. 7 is the principle schematic of the package assembly of the high power semi-conductor shown in Fig. 6 and radiator;
Fig. 8 is the decomposing schematic representation of the package assembly of the high power semi-conductor shown in Fig. 6 and radiator;
Fig. 9 is the decomposing schematic representation of another angle of the package assembly of the high power semi-conductor shown in Fig. 6 and radiator;
Figure 10 is the schematic diagram of the 3rd embodiment of the high power semi-conductor of present patent application and the package assembly of radiator;
Figure 11 is the principle schematic of the package assembly of the high power semi-conductor shown in Figure 10 and radiator.
Embodiment
In order to the technical characteristic to present patent application, object and effect have understanding clearly, now contrast the embodiment that accompanying drawing describes present patent application in detail.
The embodiment of the high power semi-conductor of present patent application and the package assembly of radiator is described below in detail, the example of these embodiments is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.
In the description of the high power semi-conductor of present patent application and the package assembly of radiator, it will be appreciated that, term "front", "rear", " on ", D score, " upper end ", " lower end ", " top ", the orientation of the instruction such as " bottom " or position relationship be based on orientation shown in the drawings or position relationship, only present patent application and simplified characterization for convenience of description, instead of instruction or hint indication device or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as the restriction to present patent application.In addition, term " first ", " second " etc. only for describing object, and can not be interpreted as instruction or hint relative importance.
Fig. 1 is the schematic diagram of common three-phase brushless motor drive circuit, and this three-phase brushless motor drive circuit comprises power supply 8, the driver module 13 be connected with power supply 8, and driver module 13 is connected with three-phase brushless motor 7, rotates for driving three-phase brushless motor 7.Driver module 13 comprises first power semiconductor modular 10 and second largest power semiconductor modular 11, wherein first power semiconductor modular 10 is provided with minimum three high power semiconductor components 1,3,5, second largest power semiconductor modular 11 is provided with minimum three high power semiconductor components 2,4,6 in addition, high power semiconductor component 1 ~ 6 can be MOSFET or other semiconductor switch devices.High power semiconductor component 1 ~ 6 operationally can produce a large amount of heats, if timely to outdiffusion, high power semiconductor component 1 ~ 6 temperature can not can be caused too high and lost efficacy.The high power semi-conductor of present patent application and the package assembly of radiator then can well address this problem.Below how the package assembly of the high power semi-conductor and radiator of introducing present patent application is in detail realized.
As shown in Figure 2 to Figure 3, be the schematic diagram of the first embodiment of the high power semi-conductor of present patent application and the package assembly of radiator.Radiator 20 has three main radiating fin 20a, 20b and 20c, wherein form the accommodation space for receiving first power semiconductor modular 10 between main radiating fin 20a and 20b, the high power semiconductor component 1,3,5 that printed circuit board (PCB) 101 and first surface thereof mount and gap filling layer 102 are inserted in this accommodation space; Form the accommodation space for receiving second largest power semiconductor modular 11 between main radiating fin 20b and 20c, the high power semiconductor component 2,4,6 that printed circuit board (PCB) 111 and first surface thereof mount and gap filling layer 112 are inserted in this accommodation space.
Referring to Fig. 2 to Fig. 5, in order to better heat radiation, at printed circuit board (PCB) 101,111 and be mainly respectively equipped with gap filling layer 102,112 between radiating fin 20a, 20b, 20c, gap filling layer 102,112 is made up of Heat Conduction Material, wherein gap filling layer 102 is for filling the first power semiconductor modular 10 of print and main gap between radiating fin 20a, 20b, and gap filling layer 112 is for filling second largest power semiconductor modular 11 and main gap between radiating fin 20b, 20c.In order to better dispel the heat and assemble, gap filling layer 102, 112 is double-decker, wherein, gap filling layer 102 comprises ground floor 102a stacked together and second layer 102b, second layer 102b is positioned at the outside of ground floor 102a and is close to main radiating fin 20a, the surface of 20b, gap filling layer 112 comprises ground floor 112a stacked together and second layer 112b, second layer 112b is positioned at the outside of ground floor 112a and is close to main radiating fin 20b, the surface of 20c, gap filling layer 102, the ground floor 102a of 112, 112a and second layer 102b, 112b is made up of heat-conduction electric insulation exotic material respectively, wherein ground floor 102a, 112a is soft and surface has viscosity, can well gap be filled like this and be fixed on printed circuit board (PCB) 101, 111 and the surface of high power semiconductor component 1 ~ 6, but also the effect of buffering can be played, tough and tensile and the surface tack free of the second layer 102b, 112b, and the coefficient of friction of the second layer 102b, 112b is less than the coefficient of friction of ground floor 102a, 112a, like this can conveniently with the form slipped into by high-power semiconductor module 10,11 are inserted in the main accommodation space formed between radiating fin 20a, 20b, 20c.Ground floor 102a, 112a can be made up of silicone elastomer or other suitable materials, the second layer 102b, 112b can be PETG dielectric insert, or the second layer 102b, 112b are made up of carbon filled glass fiber, carbon filled polyimide, silicone elastomer, the polyimides with silicone rubber coating or other suitable materials.
Referring to Fig. 2 to Fig. 5, in the present embodiment, the first surface of printed circuit board (PCB) 101 is pasted with high power semiconductor component 1,3,5, semiconductor element 1,3,5 is close to the ground floor 102a of gap filling layer 102, the ground floor 102a of gap filling layer 102 is close in second face of printed circuit board (PCB) 101, ensure printed circuit board (PCB) 101 and on high power semiconductor component 1,3,5 and gap filling layer 102 keep good contact, enable heat fast in time by printed circuit board (PCB) 101 and on high power semiconductor component 1,3,5 conduct on radiator 20.The radiator structure of printed circuit board (PCB) 111 and high power semiconductor component 2,4,6 and printed circuit board (PCB) 101 and on the radiator structure of high power semiconductor component 1,3,5 identical, repeat no more.In the present embodiment, drive circuit also comprises tertiary circuit module 14, be connected by connector 12 between first power semiconductor modular 10 with second largest power semiconductor modular 11, second largest power semiconductor modular 11 is connected by connector 15 with between tertiary circuit module 14.
As shown in Figures 6 to 9, be the schematic diagram of the second embodiment of the high power semi-conductor of present patent application and the package assembly of radiator.Radiator 20 has two main radiating fin 20a and 20b, form the accommodation space for receiving high-power semiconductor module 10 between main radiating fin 20a and 20b, high power semiconductor component 2,4,6 and the gap filling layer 102 of the upper attachment of the high power semiconductor component 1,3,5 and second that printed circuit board (PCB) 101 and first surface thereof mount are inserted in this accommodation space.
Referring to Fig. 6 to Fig. 9, in order to better heat radiation, at printed circuit board (PCB) 101 and be mainly provided with gap filling layer 102 between radiating fin 20a, 20b, gap filling layer 102 is made up of Heat Conduction Material, for filling first power semiconductor modular 10 and main gap between radiating fin 20a, 20b.In order to better dispel the heat and assemble, gap filling layer 102 is double-decker, gap filling layer 102 comprises ground floor 102a stacked together and second layer 102b, second layer 102b is positioned at the outside of ground floor 102a and is close to main radiating fin 20a, the surface of 20b, ground floor 102a and the second layer 102b of gap filling layer 102 are made up of heat-conduction electric insulation exotic material respectively, wherein ground floor 102a is soft and surface has viscosity, can well gap be filled like this and be fixed on the surface of printed circuit board (PCB) 101 and high power semiconductor component 1 ~ 6, but also the effect of buffering can be played, tough and tensile and the surface tack free of second layer 102b, and the coefficient of friction of second layer 102b is less than the coefficient of friction of ground floor 102a, can conveniently with the form slipped into, printed circuit board (PCB) 101 be inserted in the main accommodation space formed between radiating fin 20a, 20b like this.Ground floor 102a can be made up of silicone elastomer or other suitable materials, second layer 102b can be PETG dielectric insert, or second layer 102b is made up of carbon filled glass fiber, carbon filled polyimide, silicone elastomer, the polyimides with silicone rubber coating or other suitable materials.
Referring to Fig. 6 to Fig. 9, in the present embodiment, the two-sided of printed circuit board (PCB) 101 is all pasted with high power semiconductor component, wherein, the first surface of printed circuit board (PCB) 101 is pasted with high power semiconductor component 1, 3, 5, second face of printed circuit board (PCB) 101 is pasted with high power semiconductor component 2, 4, 6, high power semiconductor component 1 ~ 6 is close to the ground floor 102a of gap filling layer 102, ensure that the high power semiconductor component 1 ~ 6 on printed circuit board (PCB) 101 keeps good contact with gap filling layer 102, enable heat fast in time by printed circuit board (PCB) 101 and on high power semiconductor component 1 ~ 6 conduct on radiator 20.In the present embodiment, drive circuit also comprises tertiary circuit module 14, is connected between high-power semiconductor module 10 with tertiary circuit module 14 by connector 12.
As shown in Figure 10 and Figure 11, be the schematic diagram of the 3rd embodiment of the high power semi-conductor of present patent application and the package assembly of radiator, it has done further improvement on the basis of the second embodiment.In order to obtain better radiating effect, high power semiconductor component 1,3,5 on the first surface of the printed circuit board (PCB) 101 of high-power semiconductor module 10 adds metal conducting strip 201,203,205 respectively, the top that be fixed on the encapsulation of high power semiconductor component 1,3,5 of metal conducting strip 201,203,205 respectively in level, metal conducting strip 201,203,205 is electrically connected to the pin having big current to circulate of high power semiconductor component 1,3,5 respectively with hand weldering or SMT mode, the D pin of such as MOSFET; High power semiconductor component 2,4,6 on second of printed circuit board (PCB) 101 adds metal conducting strip 202,204,206 respectively, the top that be fixed on the encapsulation of high power semiconductor component 2,4,6 of metal conducting strip 202,204,206 respectively in level, metal conducting strip 202,204,206 is electrically connected to the pin having big current to circulate of high power semiconductor component 2,4,6 respectively with hand weldering or SMT mode, the D pin of such as MOSFET.Metal conducting strip 201 ~ 206 can be copper, aluminium or alloy sheet, because metal conducting strip 201 ~ 206 is connected with the big current pin of high power semiconductor component 1 ~ 6 respectively, the heat that big current pin produces can be conducted on main radiating fin 20a and 20b of radiator 20 in time, better radiating effect can be obtained thus.Other structures of this embodiment are identical with the structure of the second embodiment, repeat no more.
In the present patent application, high power semiconductor component can pass through surface mounting technology (SMT) attachment on a printed circuit, also can by the form welding of welding on a printed circuit.Radiator can be formed by metal material processing, such as aluminium alloy, aluminium, copper alloy, copper etc., a metal can be adopted, process with extrusion modling or by methods such as digital processing centers (CNC), also can assemble with welding or being formed of being threaded by more than a metal parts.
In the present patent application, owing to the printed circuit board (PCB) being pasted with high power semiconductor component being arranged in the accommodation space that formed between the main radiating fin of radiator, and gap filling layer is set between printed circuit board (PCB) and main radiating fin, on the main radiating fin that the heat enabling high power semiconductor component and printed circuit board (PCB) produce conducts to radiator fast and by main radiating fin fast to outdiffusion.
By reference to the accompanying drawings the embodiment of present patent application is described above; but present patent application is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; instead of it is restrictive; those of ordinary skill in the art is under the enlightenment of present patent application; do not departing under the ambit that present patent application aim and claim protect, also can make a lot of form, these all belong within the protection of present patent application.
Claims (14)
1. a package assembly for high power semi-conductor and radiator, is characterized in that, comprising:
First power semiconductor modular, described first power semiconductor modular comprises printed circuit board (PCB), and is arranged on the high power semiconductor component on the first surface of printed circuit board (PCB);
Second largest power semiconductor modular, described second largest power semiconductor modular comprises printed circuit board (PCB), and is arranged on the high power semiconductor component on the first surface of printed circuit board (PCB);
Radiator, described radiator has at least three main radiating fins, and described first power semiconductor modular and second largest power semiconductor modular are separately positioned between adjacent two main radiating fins;
Gap filling layer, described gap filling layer is arranged between described first power semiconductor modular and main radiating fin and between described second largest power semiconductor modular and main radiating fin, and the surface of described gap filling layer and main radiating fin is close to.
2. the package assembly of high power semi-conductor according to claim 1 and radiator, is characterized in that, described high power semiconductor component is surface-pasted semiconductor.
3. the package assembly of high power semi-conductor according to claim 1 and radiator, is characterized in that, described high power semiconductor component is mounted on the printed circuit board by surface mounting technology.
4. the high power semi-conductor according to Claims 2 or 3 and the package assembly of radiator, is characterized in that, described printed circuit board (PCB) is provided with the connector for being electrically connected or connecting hole.
5. the package assembly of high power semi-conductor according to claim 1 and radiator, is characterized in that, described gap filling layer has thermal conductivity and flexibility.
6. the package assembly of high power semi-conductor according to claim 1 and radiator, is characterized in that, described gap filling layer is coated described first power semiconductor modular and second largest power semiconductor modular respectively.
7. the package assembly of high power semi-conductor according to claim 1 and radiator, is characterized in that, described radiator is made by a metalwork or combined by the metalwork of more than.
8. a package assembly for high power semi-conductor and radiator, is characterized in that, comprising:
High-power semiconductor module, described high-power semiconductor module comprises printed circuit board (PCB) and is arranged on the high power semiconductor component on the first surface of printed circuit board (PCB) and second;
Radiator, described radiator has at least two main radiating fins, and described high-power semiconductor module is arranged between adjacent two main radiating fins;
Gap filling layer, described gap filling layer is arranged between described high-power semiconductor module and main radiating fin, and the surface of described gap filling layer and main radiating fin is close to.
9. the package assembly of high power semi-conductor according to claim 8 and radiator, is characterized in that, described high power semiconductor component is surface-pasted semiconductor.
10. the package assembly of high power semi-conductor according to claim 8 and radiator, is characterized in that, described high power semiconductor component is mounted on the printed circuit board by surface mounting technology.
The package assembly of 11. high power semi-conductors according to claim 8 and radiator, is characterized in that, described printed circuit board (PCB) is provided with the connector for being electrically connected or connecting hole.
The package assembly of 12. high power semi-conductors according to claim 8 and radiator, is characterized in that, described gap filling layer has thermal conductivity and flexibility.
The package assembly of 13. high power semi-conductors according to claim 8 and radiator, is characterized in that, described radiator is made by a metalwork or combined by the metalwork of more than.
The package assembly of 14. high power semi-conductors according to claim 8 and radiator, it is characterized in that, the top of the encapsulation of described high power semiconductor component be level be fixed with metal conducting strip, described metal conducting strip is electrically connected with the pin having big current to circulate of described high power semiconductor component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520638590.0U CN204834602U (en) | 2015-08-21 | 2015-08-21 | Package assembly of big power semiconductor and radiator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520638590.0U CN204834602U (en) | 2015-08-21 | 2015-08-21 | Package assembly of big power semiconductor and radiator |
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| CN204834602U true CN204834602U (en) | 2015-12-02 |
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| CN201520638590.0U Active CN204834602U (en) | 2015-08-21 | 2015-08-21 | Package assembly of big power semiconductor and radiator |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107093651A (en) * | 2017-05-18 | 2017-08-25 | 江西比太科技有限公司 | The two-in-one automatic loading/unloading equipment of solar silicon wafers |
| CN107124854A (en) * | 2017-05-26 | 2017-09-01 | 航天东方红卫星有限公司 | A kind of storehouse assembly thermal controls apparatus |
| CN110024243A (en) * | 2016-12-14 | 2019-07-16 | 株式会社自动网络技术研究所 | Electric connection box |
-
2015
- 2015-08-21 CN CN201520638590.0U patent/CN204834602U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110024243A (en) * | 2016-12-14 | 2019-07-16 | 株式会社自动网络技术研究所 | Electric connection box |
| CN107093651A (en) * | 2017-05-18 | 2017-08-25 | 江西比太科技有限公司 | The two-in-one automatic loading/unloading equipment of solar silicon wafers |
| CN107093651B (en) * | 2017-05-18 | 2023-08-04 | 江西比太科技有限公司 | Automatic unloading equipment of going up of two unification of solar wafer |
| CN107124854A (en) * | 2017-05-26 | 2017-09-01 | 航天东方红卫星有限公司 | A kind of storehouse assembly thermal controls apparatus |
| CN107124854B (en) * | 2017-05-26 | 2019-01-25 | 航天东方红卫星有限公司 | A kind of storehouse assembly thermal controls apparatus |
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