CN203788459U - Mems麦克风 - Google Patents

Mems麦克风 Download PDF

Info

Publication number
CN203788459U
CN203788459U CN201420160870.0U CN201420160870U CN203788459U CN 203788459 U CN203788459 U CN 203788459U CN 201420160870 U CN201420160870 U CN 201420160870U CN 203788459 U CN203788459 U CN 203788459U
Authority
CN
China
Prior art keywords
chip
mems
hole
wiring board
asic chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201420160870.0U
Other languages
English (en)
Inventor
孙德波
刘文涛
董南京
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Goertek Microelectronics Inc
Original Assignee
Goertek Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goertek Inc filed Critical Goertek Inc
Priority to CN201420160870.0U priority Critical patent/CN203788459U/zh
Application granted granted Critical
Publication of CN203788459U publication Critical patent/CN203788459U/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15151Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16151Cap comprising an aperture, e.g. for pressure control, encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)

Abstract

本实用新型公开了一种MEMS麦克风,涉及电声技术领域,包括封装为一体的线路板和外壳,所述线路板和所述外壳围成的空间内收容有MEMS芯片和ASIC芯片,所述MEMS芯片和所述ASIC芯片重叠固定在所述线路板上,所述ASIC芯片位于所述MEMS芯片与所述线路板之间,所述MEMS芯片的膜片靠近所述ASIC芯片;所述ASIC芯片上设有用于电连接所述MEMS芯片与所述线路板的导电通孔,所述ASIC芯片上对应所述MEMS芯片的膜片的位置设有通孔。本实用新型体积小巧,组装工序简单,生产效率高,生产成本低。

Description

MEMS麦克风
技术领域
本实用新型涉及声电技术领域,特别涉及一种MEMS麦克风。
背景技术
MEMS(Micro-Electro-Mechanical System,微型机电系统)麦克风是将声音信号转换为电信号的能量转换器,是基于MEMS技术制造的麦克风,可以采用表贴工艺进行制造,能够承受很高的回流焊温度,并具有很好的噪声消除性能与良好的射频及电磁干扰抑制能力,MEMS麦克风正是以其上述诸多的优点在便携式电子设备中得到了广泛的应用。
现有MEMS麦克风大多包括封装为一体的线路板和外壳,线路板和外壳围成的空间内收容有MEMS芯片和ASIC(Application Specific IntegratedCircuit,专用集成电路)芯片,MEMS芯片和ASIC芯片并排固定在线路板上,MEMS芯片与ASIC芯片之间,以及ASIC芯片与线路板之间均通过金线进行电连接。此种结构的MEMS麦克风体积较大;又因芯片与芯片之间,芯片与线路板之间均需要金线电连接,故在麦克风组装时需要金线键合的工序,工序较繁琐,生产效率低;且金线的成本较高,从而使得MEMS麦克风的生产成本也较高。
实用新型内容
本实用新型所要解决的技术问题是提供一种MEMS麦克风,此MEMS麦克风体积小巧;组装工序简便,生产效率高;且生产成本低。
为解决上述技术问题,本实用新型的技术方案是:
一种MEMS麦克风,包括封装为一体的线路板和外壳,所述线路板和所述外壳围成的空间内收容有MEMS芯片和ASIC芯片,所述MEMS芯片和所述ASIC芯片重叠固定在所述线路板上,所述ASIC芯片位于所述MEMS芯片与所述线路板之间,所述MEMS芯片的膜片靠近所述ASIC芯片;所述ASIC芯片上设有用于电连接所述MEMS芯片与所述线路板的导电通孔,所述ASIC芯片上对应所述MEMS芯片的膜片的位置设有通孔。
其中,所述导电通孔的两端分别设有用于电连接所述MEMS芯片与所述导电通孔,以及所述导电通孔与所述线路板的电连接件。
其中,所述MEMS芯片和所述ASIC芯片通过胶体密封固定在所述线路板上。
作为一种实施方式,所述外壳上设有声孔。
作为另一种实施方式,所述线路板上设有声孔,所述通孔连通所述MEMS芯片的膜片与所述声孔。
采用了上述技术方案后,本实用新型的有益效果是:
由于本实用新型MEMS麦克风的MEMS芯片和ASIC芯片重叠固定在线路板上,ASIC芯片上设有导电通孔,且ASIC芯片上对应MEMS芯片的膜片的位置设有通孔,MEMS芯片通过导电通孔与线路板电连接。MEMS芯片与ASIC芯片重叠固定在电路板上,节省了一个芯片的占用面积,可有效减小MEMS麦克风的体积。MEMS芯片通过设置在ASIC芯片上的导电通孔与线路板电连接,替代了现有技术中的金线连接,从而省去了键合金线的组装工序,简化了MEMS麦克风的组装工序,提高了生产效率,同时也节省了金线的成本,降低了MEMS麦克风的生产成本。
附图说明
图1是本实用新型MEMS麦克风实施例一的结构示意图;
图2是本实用新型MEMS麦克风实施例二的结构示意图;
其中:10a、线路板,10b、线路板,20a、外壳,20b、外壳,30、MEMS芯片,32、膜片,40、ASIC芯片,42、通孔,44、导电通孔,50、胶体,60、电连接件,70、声孔。
具体实施方式
下面结合附图和实施例,进一步阐述本实用新型。
实施例一:
如图1所示,一种MEMS麦克风,包括线路板10a和一个一端敞口的外壳20a,外壳20a的敞口端与线路板10a结合封装为一体。定义线路板10a位于封装体内部的一侧为内侧,位于封装体外部的一侧为外侧;外壳20a位于封装体内部的一侧为内侧,位于封装体外部的一侧为外侧。线路板10a的内侧固定有MEMS芯片30和ASIC芯片40,MEMS芯片30与ASIC芯片40重叠固定在线路板10a上。ASIC芯片40位于MEMS芯片30与线路板10a之间,MEMS芯片30的膜片32靠近ASIC芯片40设置,即ASIC芯片40固定在线路板10a上,MEMS芯片30倒装固定在ASIC芯片40上,MEMS芯片30和ASIC芯片40通过胶体50密封固定在线路板10a上,胶体50通过四个头的点胶机在芯片的四个面同时喷射胶水而成,胶体50包裹住了ASIC芯片40及MEMS芯片30靠近ASIC芯片40的部分,在将MEMS芯片30及ASIC芯片40固定到线路板10a上的同时还起到了密封前、后声腔的作用。
如图1所示,ASIC芯片40上设有两个导电通孔44。两个导电通孔44均是先通过蚀刻工艺在ASIC芯片40上形成的硅穿孔,然后在硅穿孔内注入金属,使其具有导电的作用。MEMS芯片30上的焊盘通过导电通孔44与线路板10a电连接。两个导电通孔44的两端均分别设有电连接件60,MEMS芯片片30上的焊盘与导电通孔44之间通过导电通孔44一端的电连接件60电连接,导电通孔44与线路板10a之间通过导电通孔44另一端的电连接件60电连接,电连接件60是铜和锡的结合体,是铜柱加锡球蚀刻回流之后形成的凸点,能够起到电连接的作用。
如图1所示,ASIC芯片40上对应MEMS芯片30的膜片32的位置设有通孔42,通孔42由蚀刻工艺制得,其可以是圆孔,也可以是方孔,主要起到通声和通气的作用。在本实施方式中通孔42增大了MEMS麦克风的后声腔,有利于提高MEMS麦克风的灵敏度。
如图1所示,外壳20a上设有声孔70。
实施例二:
如图2所示,本实施方式与实施例一基本相同,其不同之处在于:
声孔70不是设置在外壳20b上,而是设置在线路板10b上,ASIC芯片40上的通孔42起到连通MEMS芯片30的膜片32与声孔70的作用,可使得由声孔70进入的声音信号毫无阻挡的作用在MEMS芯片30的膜片32上。
本实用新型的工作原理如下:
声音信号由声孔进入到MEMS麦克风的内腔并作用到MEMS芯片的膜片上,MEMS芯片将感应到的声音信号转换为电信号输出,MEMS芯片输出的电信号通过ASIC芯片处理后经由线路板转给终端设备。本实用新型将MEMS芯片与ASIC芯片进行了重叠设置,有效的减小了MEMS麦克风的体积;又用导电通孔替代了现在有技术中的金线,从而简化了MEMS麦克风的组装工序,提高了生产效率,同时也降低了生产成本。
上述涉及到的ASIC芯片上的导电通孔和通孔均是在晶圆制造厂中完成的。
本实用新型不局限于上述具体的实施方式,本领域的普通技术人员从上述构思出发,不经过创造性的劳动,所作出的种种变换,均落在本实用新型的保护范围之内。

Claims (5)

1.MEMS麦克风,包括封装为一体的线路板和外壳,所述线路板和所述外壳围成的空间内收容有MEMS芯片和ASIC芯片,其特征在于,所述MEMS芯片和所述ASIC芯片重叠固定在所述线路板上,所述ASIC芯片位于所述MEMS芯片与所述线路板之间,所述MEMS芯片的膜片靠近所述ASIC芯片;所述ASIC芯片上设有用于电连接所述MEMS芯片与所述线路板的导电通孔;所述ASIC芯片上对应所述MEMS芯片的膜片的位置设有通孔。
2.根据权利要求1所述的MEMS麦克风,其特征在于,所述导电通孔的两端分别设有用于电连接所述MEMS芯片与所述导电通孔,以及所述导电通孔与所述线路板的电连接件。
3.根据权利要求2所述的MEMS麦克风,其特征在于,所述MEMS芯片和所述ASIC芯片通过胶体密封固定在所述线路板上。
4.根据权利要求1至3任一权利要求所述的MEMS麦克风,其特征在于,所述外壳上设有声孔。
5.根据权利要求1至3任一权利要求所述的MEMS麦克风,其特征在于,所述线路板上设有声孔,所述通孔连通所述MEMS芯片的膜片与所述声孔。
CN201420160870.0U 2014-04-03 2014-04-03 Mems麦克风 Expired - Fee Related CN203788459U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420160870.0U CN203788459U (zh) 2014-04-03 2014-04-03 Mems麦克风

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420160870.0U CN203788459U (zh) 2014-04-03 2014-04-03 Mems麦克风

Publications (1)

Publication Number Publication Date
CN203788459U true CN203788459U (zh) 2014-08-20

Family

ID=51324607

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420160870.0U Expired - Fee Related CN203788459U (zh) 2014-04-03 2014-04-03 Mems麦克风

Country Status (1)

Country Link
CN (1) CN203788459U (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104735596A (zh) * 2014-12-30 2015-06-24 华天科技(西安)有限公司 一种硅麦克风封装结构及其制备方法
CN104780490A (zh) * 2015-04-20 2015-07-15 歌尔声学股份有限公司 一种mems麦克风的封装结构及其制造方法
CN104990565A (zh) * 2015-07-21 2015-10-21 歌尔声学股份有限公司 一种环境传感器
CN105067013A (zh) * 2015-07-21 2015-11-18 歌尔声学股份有限公司 一种环境传感器
CN106335868A (zh) * 2016-08-31 2017-01-18 歌尔股份有限公司 一种mems芯片集成的封装结构
US9656853B2 (en) 2015-06-22 2017-05-23 Merry Electronics(Shenzhen) Co., Ltd. MEMS chip package

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104735596A (zh) * 2014-12-30 2015-06-24 华天科技(西安)有限公司 一种硅麦克风封装结构及其制备方法
CN104780490A (zh) * 2015-04-20 2015-07-15 歌尔声学股份有限公司 一种mems麦克风的封装结构及其制造方法
US9656853B2 (en) 2015-06-22 2017-05-23 Merry Electronics(Shenzhen) Co., Ltd. MEMS chip package
CN104990565A (zh) * 2015-07-21 2015-10-21 歌尔声学股份有限公司 一种环境传感器
CN105067013A (zh) * 2015-07-21 2015-11-18 歌尔声学股份有限公司 一种环境传感器
CN106335868A (zh) * 2016-08-31 2017-01-18 歌尔股份有限公司 一种mems芯片集成的封装结构

Similar Documents

Publication Publication Date Title
CN203788459U (zh) Mems麦克风
CN102917303B (zh) 塑料壳封装麦克风
CN109413554B (zh) 一种指向性mems麦克风
CN204442688U (zh) Mems麦克风
CN203788460U (zh) Mems麦克风
CN202663538U (zh) Mems麦克风
CN203788457U (zh) Mems麦克风
CN203845811U (zh) 多功能传感器
CN203748005U (zh) 一种mems麦克风
CN204442689U (zh) Mems麦克风
CN211089966U (zh) 一种mems麦克风及电子设备
CN203788458U (zh) Mems麦克风
WO2016011780A1 (zh) 一种mems麦克风、前进音mems麦克风
CN110769357A (zh) 一种采用引线框架塑料壳的麦克风封装结构
CN203466939U (zh) 扬声器模组
CN214734496U (zh) 微机电传感器
CN215835560U (zh) 一种mems麦克风
CN213694155U (zh) 智能麦克风封装结构和电子设备
CN210536942U (zh) Mems麦克风
CN109462807B (zh) 一种传感器的电连接结构和电子设备
CN113582128A (zh) 一种硅麦叠装wb封装工艺
CN209882089U (zh) 一种指向性防尘硅麦克风
WO2022000582A1 (zh) 耳机及其装配方法
CN112492492A (zh) 一种麦克风封装结构及麦克风系统
CN201054751Y (zh) 一种数字传声器

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268

Patentee after: Goertek Inc.

Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268

Patentee before: Goertek Inc.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200612

Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province

Patentee after: Goer Microelectronics Co.,Ltd.

Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268

Patentee before: GOERTEK Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140820