CN203788458U - Mems麦克风 - Google Patents
Mems麦克风 Download PDFInfo
- Publication number
- CN203788458U CN203788458U CN201420160868.3U CN201420160868U CN203788458U CN 203788458 U CN203788458 U CN 203788458U CN 201420160868 U CN201420160868 U CN 201420160868U CN 203788458 U CN203788458 U CN 203788458U
- Authority
- CN
- China
- Prior art keywords
- chip
- mems
- wiring board
- hole
- asic chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000084 colloidal system Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 10
- 241000218202 Coptis Species 0.000 description 9
- 235000002991 Coptis groenlandica Nutrition 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Landscapes
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420160868.3U CN203788458U (zh) | 2014-04-03 | 2014-04-03 | Mems麦克风 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420160868.3U CN203788458U (zh) | 2014-04-03 | 2014-04-03 | Mems麦克风 |
Publications (1)
Publication Number | Publication Date |
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CN203788458U true CN203788458U (zh) | 2014-08-20 |
Family
ID=51324606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201420160868.3U Expired - Fee Related CN203788458U (zh) | 2014-04-03 | 2014-04-03 | Mems麦克风 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN203788458U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108249383A (zh) * | 2016-12-28 | 2018-07-06 | 深迪半导体(上海)有限公司 | 一种mems传感器、麦克风及压力传感器 |
-
2014
- 2014-04-03 CN CN201420160868.3U patent/CN203788458U/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108249383A (zh) * | 2016-12-28 | 2018-07-06 | 深迪半导体(上海)有限公司 | 一种mems传感器、麦克风及压力传感器 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200611 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140820 |