CN203747635U - Four-quadrant insulated gate bipolar transistor module - Google Patents
Four-quadrant insulated gate bipolar transistor module Download PDFInfo
- Publication number
- CN203747635U CN203747635U CN201420044785.8U CN201420044785U CN203747635U CN 203747635 U CN203747635 U CN 203747635U CN 201420044785 U CN201420044785 U CN 201420044785U CN 203747635 U CN203747635 U CN 203747635U
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- CN
- China
- Prior art keywords
- direct copper
- substrate
- signal row
- bipolar transistor
- insulated gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
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Abstract
A four-quadrant insulated gate bipolar transistor module comprises a substrate, a direct copper laying substrate, an insulated gate bipolar transistor chip, a diode chip, signal row needles, power terminals, a PCB driving circuit board, an upper cover shell and a lower cover shell. The substrate and the direct copper laying substrate are combined through soldering. The insulated gate bipolar transistor chip, the diode chip and the direct copper laying substrate are combined through the soldering. One signal row needle, the power terminal and the direct copper laying substrate are combined through the soldering. The PCB driving circuit board is positioned on the lower cover shell and then is combined with the signal row needles through the soldering. Another educed signal row needle and the PCB driving circuit board are combined through the soldering. The lower cover shell is fixedly connected to the substrate. The upper cover shell and the lower cover shell are fastened through a bolt. An integral circuit of the module is divided into a front three-phase rectification portion and a rear three-phase inversion portion. The power terminals of the two portions and the educed signal row needles are led out respectively. The module has the characteristics that reliability is high; installation is convenient; compact performance is high.
Description
Technical field
The utility model relates to a kind of novel high reliability four-quadrant insulated gate bipolar transistor module, belong to semiconductor and power module package technical field.
Background technology
Four-quadrant insulated gate bipolar transistor module mainly comprises substrate, direct copper substrate (DBC), insulated gate bipolar transistor (IGBT) chip, diode chip for backlight unit, signal row pin, power terminal, PCB drive circuit board and upper and lower cover shell.In the time that the overall structure in this module is designed, consider thermal design, structural stress design, EMC design and circuit structure design, to consider in addition the production cost of deisgn product simultaneously.The subject matter existing in existing four-quadrant insulated gate bipolar transistor module application is that product circuit is formed by multiple half-bridge module parallel combinations, and consistency is poor, and reliability is low, also needs outside connection PCB drive circuit board, and installation complexity and efficiency are lower; In the time of installation, the installation respectively of multiple modules takies more space, and compactedness is poor.
Utility model content
The purpose of this utility model is to overcome the deficiency that prior art exists, and provides a kind of rational in infrastructure, compact, easy for installation, the four-quadrant insulated gate bipolar transistor module that reliability is high.
The purpose of this utility model is achieved by the following technical solution, described four-quadrant insulated gate bipolar transistor module, it comprises substrate, direct copper substrate, insulated gate bipolar transistor chip, diode chip for backlight unit, signal row pin, power terminal, PCB drive circuit board and upper, lower cover housing, described substrate and direct copper substrate are by soldering combination, insulated gate bipolar transistor chip, between diode chip for backlight unit and direct copper substrate by soldering combination, there is a signal row pin to be combined by soldering with power terminal and direct copper substrate, after being positioned on lower cover housing, PCB drive circuit board is combined by soldering with described signal row pin, signal row's pin that another is drawn and PCB drive circuit board are equally by soldering combination, lower cover housing is fixedly connected with substrate, upper cover shell and lower cover housing pass through screw fastening, the integrated circuit of module is divided into three-phase rectifying part and rear three-phase inversion part, two-part power terminal and the signal row pin of drawing are drawn respectively.
On described substrate, be distributed with the direct copper substrate that three block structures are identical, these three direct copper substrates are yi word pattern and evenly arrange, the every each half-bridge circuit in direct copper substrate distribution left and right, a middle direct copper substrate left side is a half-bridge circuit of three-phase rectifying part, the half-bridge circuit that right side is rear three-phase inverting circuit.
Described direct copper substrate (DBC) is upper draws module by signal by connected signal row pin, after being connected with the signal row pin of drawing by described PCB drive circuit board again after described signal row pin is connected with PCB drive circuit board, export module-external to by this signal row pin of drawing.
On described upper cover shell, be provided with the through hole that can pour into module epoxy resin processing.
The utility model has the advantages that: reliability of the present utility model is high, easy for installation, and compactedness is strong.
Brief description of the drawings
Fig. 1 is internal structure schematic diagram of the present utility model.
Fig. 2 is external structure schematic diagram of the present utility model.
Fig. 3 is DBC distribution schematic diagram of the present utility model.
Fig. 4 is the application schematic diagram of PCB drive circuit board of the present utility model.
Fig. 5 is circuit theory diagrams of the present utility model.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.As shown in the figure, the utility model comprises substrate 1, insulated gate bipolar transistor (IGBT) chip 2, diode chip for backlight unit 3, direct copper substrate (DBC) 4, signal row pin 5, the first power terminal 6, the second power terminal 7, the 3rd power terminal 8, the 4th power terminal 9, the 5th power terminal 10, signal row pin (2) 11, PCB drive circuit board 12, lower cover housing 13 and the upper cover shell 14 of drawing.Between insulated gate bipolar transistor chip 2, diode chip for backlight unit 3 and direct copper substrate 4 by soldering combination.Substrate 1 and direct copper substrate 4 are by soldering combination.On substrate 1, soldering has three to be between 4, three direct copper substrates 4 of direct copper substrate that yi word pattern evenly arranges and to leave the wide raceway groove of 1.2mm.
Three described direct copper substrate 4 structures are all identical, the every direct copper substrate 4 each half-bridge circuit around that can distribute, middle direct copper substrate 4 left sides are a half-bridge circuit of three-phase rectifying part, the half-bridge circuit that right side is rear three-phase inverting circuit; Before substrate 1 and 4 solderings of direct copper substrate, can screen the parameter of chip on every direct copper substrate 4, high to ensure the whole modular circuit consistency being made up of three direct copper substrates 4, reliability is also higher, as shown in Figure 3.
Being combined by soldering with the 5th power terminal 10 in the three-phase rectification circuit DC+ region of direct copper substrate 4, is combined by soldering with the 4th power terminal 9 in the DC+ region of rear three-phase inverting circuit.Be combined by soldering with the 3rd power terminal 8 respectively in the forward and backward three-phase DC-region of direct copper substrate 4, two power terminals of being combined with the soldering of DC-region are with a power terminal.Being combined by soldering with the first power terminal 6 and the second power terminal 7 respectively in the power stage region of direct copper substrate 4, and arranges in space.Signal row pin 5 is combined with the signal output area soldering of direct copper substrate 4, and signal row pin 5 is row's pin of 4 pins, can draw respectively the G utmost point and the E utmost point signal of two half-bridge circuits in left and right.This module has increased built-in PCB drive circuit board 12 in design, and this PCB drive circuit board 12 relies on the reference column of lower cover housing 13 to position, then is connected with 6 signal row pins 5 by soldering.The signal row pin 11 of drawing adopts first and the mode of PCB drive circuit board 12 solder bond, to export module-external to through the signal of PCB drive circuit board 12 system processing, row's pin quantity of the signal row pin 11 of drawing can be adjusted according to different application occasion and requirement.This overall arrangement mode has ensured that three-phase rectification circuit and rear three-phase inverting circuit draw from inside modules respectively, and symmetrical distribution.This structural design makes module easy for installation in installation, and efficiency improves.Quarter-phase circuit is integrated in the space that makes module account for complete machine in same module and significantly reduces, and compactedness is stronger, as shown in Figure 4.
The upper cover shell 14 of module and the matching design of lower cover housing 13 are tapping screw fit system, by four tapping screws, upper cover shell 14 is coordinated with lower cover housing 13 tighten fixing.In the nut bore of upper cover shell 14, part is designed to through hole, and by this through hole, module is poured into epoxy resin processing, rely on epoxy resin to reinforce each power terminal, PCB drive circuit board and the signal row pin 11 of drawing, also increase the global reliability of module.
Inside modules structure as shown in Fig. 1 and Fig. 4 and the application schematic diagram of PCB drive circuit board, realized the circuit shown in Fig. 5.In Fig. 5 circuit theory diagrams, left side is three-phase rectification circuit, and wherein 1 is DC+, and 2 is DC-, and 5,6,7 is output; Right side is rear three-phase inverting circuit, and wherein 3 is DC+, and 4 is DC-, and 8,9,10 is output.
Claims (4)
1. a four-quadrant insulated gate bipolar transistor module, it comprises substrate, direct copper substrate, insulated gate bipolar transistor chip, diode chip for backlight unit, signal row pin, power terminal, PCB drive circuit board and upper, lower cover housing, described substrate and direct copper substrate are by soldering combination, insulated gate bipolar transistor chip, between diode chip for backlight unit and direct copper substrate by soldering combination, it is characterized in that: have signal row's pin (1) to be combined by soldering with power terminal and direct copper substrate, after being positioned on lower cover housing, PCB drive circuit board is combined by soldering with described signal row's pin (1), signal row's pin (2) that another is drawn and PCB drive circuit board are equally by soldering combination, lower cover housing is fixedly connected with substrate, upper cover shell and lower cover housing pass through screw fastening, the integrated circuit of module is divided into three-phase rectifying part and rear three-phase inversion part, two-part power terminal and signal row's pin (2) of drawing are drawn respectively.
2. four-quadrant insulated gate bipolar transistor module according to claim 1, it is characterized in that: on described substrate, be distributed with the direct copper substrate that three block structures are identical, these three direct copper substrates are yi word pattern and evenly arrange, the every each half-bridge circuit in direct copper substrate distribution left and right, a middle direct copper substrate left side is a half-bridge circuit of three-phase rectifying part, the half-bridge circuit that right side is rear three-phase inverting circuit.
3. four-quadrant insulated gate bipolar transistor module according to claim 1 and 2, it is characterized in that: described direct copper substrate (DBC) is upper draws module by signal by connected signal row's pin (1), after being connected with signal row's pin (2) of drawing by described PCB drive circuit board again after described signal row's pin (1) is connected with PCB drive circuit board, export module-external to by this signal row's pin (2) of drawing.
4. four-quadrant insulated gate bipolar transistor module according to claim 1, is characterized in that: on upper cover shell, be provided with the through hole that can pour into module epoxy resin processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420044785.8U CN203747635U (en) | 2014-01-24 | 2014-01-24 | Four-quadrant insulated gate bipolar transistor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420044785.8U CN203747635U (en) | 2014-01-24 | 2014-01-24 | Four-quadrant insulated gate bipolar transistor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203747635U true CN203747635U (en) | 2014-07-30 |
Family
ID=51347389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420044785.8U Withdrawn - After Issue CN203747635U (en) | 2014-01-24 | 2014-01-24 | Four-quadrant insulated gate bipolar transistor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203747635U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103780066A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Four-quadrant insulated gate bipolar transistor module |
| CN105609493A (en) * | 2016-03-22 | 2016-05-25 | 富士电机（中国）有限公司 | Eight-for-one IGBT (insulated gate bipolar transistor) module integrating bidirectional buck-boost functions |
-
2014
- 2014-01-24 CN CN201420044785.8U patent/CN203747635U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103780066A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Four-quadrant insulated gate bipolar transistor module |
| CN103780066B (en) * | 2014-01-24 | 2017-05-03 | 嘉兴斯达微电子有限公司 | Four-quadrant insulated gate bipolar transistor module |
| CN105609493A (en) * | 2016-03-22 | 2016-05-25 | 富士电机（中国）有限公司 | Eight-for-one IGBT (insulated gate bipolar transistor) module integrating bidirectional buck-boost functions |
| CN105609493B (en) * | 2016-03-22 | 2018-05-11 | 富士电机（中国）有限公司 | A kind of eight-in-one IGBT module of integrated bi-directional stepping functions |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140730 Effective date of abandoning: 20170503 |