CN105609493B - A kind of eight-in-one IGBT module of integrated bi-directional stepping functions - Google Patents

A kind of eight-in-one IGBT module of integrated bi-directional stepping functions Download PDF

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CN105609493B
CN105609493B CN201610163997.1A CN201610163997A CN105609493B CN 105609493 B CN105609493 B CN 105609493B CN 201610163997 A CN201610163997 A CN 201610163997A CN 105609493 B CN105609493 B CN 105609493B
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igbt module
chip
unit
igbt
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CN105609493A (en
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李俊
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Fuji Electric China Co Ltd
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Fuji Electric China Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Abstract

The present invention relates to a kind of eight-in-one IGBT module of integrated bi-directional stepping functions, eight unit T1 ~ T8 are packaged with the IGBT module；Each unit includes an antiparallel igbt chip and a FWD chip；The unit that each two is serially connected is divided into one group, parallel with one another between each group；Wherein, this eight unit T1 ~ T8 are further divided into：Part I, comprising three groups of totally six unit T1 ~ T6, it connects and composes a three phase full bridge circuit；Part II, includes the unit T7 ~ T8 of remaining one group of two series connection, and the external devices of itself and IGBT module connect and compose a Buck Boost lifting voltage conversion circuit.The present invention is integrated with buck, inversion and rectification function, and integrated level is high, reliability is high, can effectively reduce packaging cost.The present invention when being applied to electric automobile field, it can be achieved that drive motor after the boosted inversion of battery, to exterior power supply for electrical equipment, function that when brake charges to battery supply feed, the rectified backward battery of power grid.

Description

A kind of eight-in-one IGBT module of integrated bi-directional stepping functions
Technical field
The present invention relates to a kind of integrated bi-directional buck（Buck-Boost）The eight-in-one IGBT module of function, suitable for electricity Electrical automobile field.
Background technology
IGBT module is by IGBT（Insulated Gate Bipolar Transistor, insulated gate bipolar crystal Pipe）Chip and FWD（Freewheeling Diode, fly-wheel diode）The mould that chip is formed by the encapsulation of specific circuit bridge Block semiconductor product.A kind of principle topological diagram of one IGBT module 400 of the existing six directions is shown in Fig. 1, wherein including six A igbt chip and six FWD chips.
Traditional vehicle-mounted electric machine controller realizes inversion function usually using this one IGBT module of the six directions, by battery The converting direct-current power into alternating-current power of storage is to drive motor, so as to drive electric automobile during traveling.However, because cell voltage exist compared with Great fluctuation process, is easy to cause IGBT shut-off peak voltages and exceedes that its is pressure-resistant and damage, influence the DC capacitance service lifes, while also to motor temperature Rise, insulation life impacts.
In addition, vehicle-mounted electric machine controller is generally required outside one IGBT module of the six directions, then it is equipped with disconnected another A IGBT module or other similar to device, to realize the functions such as buck.Such two kinds of different IGBT modules are each independently sealed Dress, the structure for causing whole vehicle-mounted electric machine controller is excessively complicated, and required installation space is huge, it is difficult to meets high integration With the requirement of high reliability.
The content of the invention
It is an object of the invention to provide a kind of eight-in-one IGBT module, integrates buck, inversion and rectification function, has Integrated level is high, reliability is high, while the characteristics of can reduce system cost, disclosure satisfy that IGBT module in electric automobile field Application requirement.
In order to achieve the above object, the technical scheme is that providing a kind of eight-in-one of integrated bi-directional stepping functions IGBT module, is packaged with eight unit T1 ~ T8 in the IGBT module；
Each unit includes an antiparallel igbt chip and a FWD chip；
The unit that each two is serially connected is divided into one group, parallel with one another between each group；
Wherein, this eight unit T1 ~ T8 are further divided into：
Part I, comprising three groups of totally six unit T1 ~ T6, it connects and composes a three phase full bridge circuit；
Part II, includes the unit T7 ~ T8 of remaining one group of two series connection, it is connected with the external devices of IGBT module Form a Buck-Boost lifting voltage conversion circuit.
Preferably, the IGBT module is provided with insulated substrate；The upper surface of the insulated substrate, which has, is processed into wiring The first metal layer of pattern；
The igbt chip and FWD chips of one unit or multiple units, are respectively welded to the first gold medal of the insulated substrate Belong to the precalculated position on layer so that the bottom electrode of any one chip can be by wiring pattern, with same chip or difference The bottom electrode of chip is electrically connected or is separated on circuit.
The top electrodes of any one chip can be by bonded binding line or sheet metal, with same chip or non-same core The top electrodes of piece are electrically connected, or pre- from the wiring pattern where the bottom electrode of same chip or different chips Electric connection is put in positioning；
The precalculated position of wiring pattern where the bottom electrode of any one chip or the top electricity of any one chip Pole, can be electrically connected by the leads ends that bonded binding line and the IGBT module are set, and then with being electrically connected to institute The external devices of leads ends are stated, or the built-in component encapsulated by the IGBT module with being electrically connected to the leads ends realizes electricity Property connection.
Preferably, the lower surface of the insulated substrate has second metal layer, is provided with the exhausted of igbt chip and FWD chips Edge substrate, the pedestal of radiator is soldered to by second metal layer, and the heat that any one chip produces is transmitted to and is exposed to The radiator beyond IGBT module is dissipated.
Preferably, between igbt chip and FWD chips and the first metal layer, the pedestal of second metal layer and radiator it Between, welded by tin-antimony scolding tin.
Preferably, the IGBT module is provided with the housing of resin, and the built-in component encapsulated by IGBT module is accommodated in Wherein；The housing and the cover board of cover it side, connect and compose the enclosure space for encapsulating the IGBT module；The closing is empty It is interior to be filled with Silica hydrogel or epoxy resin；
The leads ends are arranged at housing, and one end is inserted into enclosure interior to connect by the inside member of IGBT module encapsulation Part, the other end extend to hull outside to connect external devices.
Preferably, N poles that the Part I being connected in Part I with three groups of respective N poles, P poles node shares, P Pole node, it is corresponding to leads ends N1, P1 to be electrically connected；The N poles of the Part II, P poles node are corresponding to leads ends N2, P2 electric Property connection；
First capacitance C1 is connected in parallel between leads ends N1, P1, is also connected in parallel between leads ends N2, P2；It is described Leads ends P1, P2 are connected to the cathode of the DC terminal of battery by first switch S1 respectively；Leads ends N1, N2 connect respectively To the anode of the DC terminal of battery；
Three groups of the Part I are in totally six unit T1 ~ T6, corresponding to the intermediate potential point of each group to be electrically connected Leads ends Z1 ~ Z3, is drawn out to outside IGBT module and is connected to the 3rd switch of the three-phase input end of motor；
The intermediate potential point of one group of the Part II, battery is connected to by the first inductance L1 and second switch S2 The cathode of DC terminal；Second capacitance C2 is connected to the negative of the tie point of the first inductance L1 and second switch S2 and the DC terminal of battery Between pole；
The electric power of battery DC end output is filled with the first capacitance C1 after lifting voltage conversion circuit boosting by Buck-Boost In, then from the first capacitance C1 be filled into the three-phase full-bridge inverting circuit being made of Part I carry out inversion after, export to electricity Machine is driven it；
In the unit of every group of two series connection, the connection of the collector of the igbt chip of a unit and the cathode of FWD chips Point, for the P poles node of the group；The emitter of the igbt chip of the unit and the anode of FWD chips and another unit in the group The tie point of the collector of igbt chip and the cathode of FWD chips, is known as the intermediate potential point of the group；The IGBT of another unit The tie point of the emitter of chip and the anode of FWD chips, for the N poles node of the group.
Preferably, the IGBT module is further connected to charge and discharge device J1 by the topological structure that discharges so that battery DC terminal output electric power by Buck-Boost lift voltage conversion circuit, the first capacitance C1, Part I form three-phase After full bridge inverter, charge and discharge device J1 is delivered to by the electric discharge topological structure, to be connected on charge and discharge device J1 Load supplying；
Wherein, the leads ends Z1 ~ Z3 that is electrically connected corresponding to the intermediate potential point of the Part I each group, connects corresponding After meeting three second inductance L2-1, L2-2, L2-3, further with three first resistor R1- including of electric discharge topological structure 1st, R1-2, R1-3 and three the 4th switch S4-1, S4-2, S4-3 connections, then pass through the electric discharge topological structure connection three the The ABC ends of charge and discharge device J1 are connected to after two resistance R2-1, R2-2, R2-3.
Preferably, the IGBT module is further connected to charge and discharge device J1 by the topological structure that charges so that connection The kinetic energy recovery system under alternating-current power supply or braking state on charge and discharge device J1, is connected by the charging topological structure To form three-phase bridge rectification circuit Part I, then by Buck-Boost lift voltage conversion circuit decompression after, be delivered to Battery charges it；
Wherein, the leads ends Z1 ~ Z3 that is electrically connected corresponding to the intermediate potential point of the Part I each group, connects corresponding After meeting three second inductance L2-1, L2-2, L2-3, further it is connected with three the 5th switch S5 of the topological structure that charges, then lead to Cross after the electric discharge topological structure connects three second resistances R2-1, R2-2, R2-3 and be connected to the ABC ends of charge and discharge device J1.
Preferably, the leads ends Z1 ~ Z3 that is electrically connected corresponding to the intermediate potential point of the Part I each group, passes through three Composition filter circuit is grounded after a 3rd capacitance C3-1, C3-2, C3-3 and three the 6th switches S6-1, S6-2, S6-3.
In conclusion the present invention by the igbt chip of eight units and FWD chip packages in same module, thus Two-way Buck-Boost stepping functions are integrated with the module, so as to effectively control cell voltage, reduce voltage fluctuation. Better reliability is preferably made using copper binding line and the Sn-Sb scolding tin of intensity higher inside IGBT module.By by IGBT module Built-in electrical insulation substrate is directly welded on radiator, realizes that IGBT module carries the structure of radiator, integrated level is high, leakproofness It is good, and improve heat dissipation performance.
Using the two-way inversion charging/discharging function of eight-in-one IGBT module of the present invention, it can be achieved that batteries of electric automobile passes through Motor is driven after boosting inversion, to exterior power supply for electrical equipment, kinetic energy recovery device is rectified to battery supply feed, power grid during brake Backward battery charging, etc..To meet automobile using high power density and high reliability request, RC can be used in terms of igbt chip （Inverse conductivity type）Igbt chip is to reduce the size.
In the prior art with two separative power devices（Such as a two-in-one IGBT module and an one IGBT mould of the six directions Block）To realize buck and inversion respectively, cause device architecture complicated, bulky, it is difficult to meet automobile using high integration and High reliability request.In contrast, in the present invention integrated bi-directional stepping functions eight-in-one IGBT module, the advantage is that： 1. save packaging cost；2. reduce power module size；3. step-up/step-down circuit is effectively reduced to the parasitism electricity of inverter circuit cabling Sense；4. reducing device count, failure risk is reduced.
Brief description of the drawings
Fig. 1 is a kind of circuit theory schematic diagram of existing one IGBT module of six directions applied in vehicle-mounted electric machine controller；
Fig. 2 is the circuit theory schematic diagram of eight-in-one IGBT module of the present invention；
Fig. 3 is the encapsulating structure schematic diagram of eight-in-one IGBT module of the present invention；
Fig. 4 is that eight-in-one IGBT module of the present invention applies an exemplary circuit theory in electric automobile field to show It is intended to.
Embodiment
Below in conjunction with attached drawing, illustrate embodiment of the invention.
As shown in Fig. 2, the present invention is integrated with totally eight unit T1 ~ T8 of symmetric configuration in an IGBT module 300.Often An antiparallel igbt chip and a FWD chip are included in a unit.One group of each two unit is serially connected, and obtains four groups T1-T2, T3-T4, T5-T6, T7-T8, it is parallel with one another between each group.According to different circuit connecting modes, every group can be independent Use, can also be combined with each other, such as four two-in-one IGBT modules, or two four-in-one IGBT modules, etc..
It is that this eight unit T1 ~ T8 are divided into two following parts in preferable example：Part I 100 includes three Totally six unit T1 ~ T6 are organized, connect and compose a three-phase full-bridge inverting circuit；Part II 200 includes one group remaining two Unit T7, T8 of series connection, itself and the device outside IGBT module 300（Capacitance, inductance etc.）Connect and compose Buck-Boost liftings Voltage conversion circuit.In preferable example, using the igbt chip of inverse conductivity type, to reduce size.
As shown in figure 3, IGBT module 300 of the present invention is provided with insulated substrate 30.In the upper table of insulated substrate 30 Face has the first metal layer 31 for being processed into wiring pattern, and corresponding igbt chip 10 and FWD chips 20 are distinguished by scolding tin 81 The precalculated position being soldered on the first metal layer 31.Have in the lower surface of insulated substrate 30（Such as it is distributed in whole lower surface 's）Second metal layer 32, heat dissipation is soldered to by the insulated substrate 30 for being provided with igbt chip 10 and FWD chips 20 by scolding tin 82 The pedestal of device 40.The radiating mode of the radiator 40 is unlimited, can set medium channel to supply cooling medium stream in pedestal It is logical, or radiating fin being exposed, etc. is provided with pedestal.The heat that chip produces passes through scolding tin 81/82, metal layer 31/32 and insulated substrate 30 be transmitted to radiator 40 after outwards dissipate.
Wherein, insulated substrate 30 can be made of ceramic materials such as the high silicon nitrides of pyroconductivity.The first metal layer 31 can By the good metal of electric conductivity, to be made such as copper or its alloy.Second metal layer 32, radiator 40, can be passed by heat The high metal of conductance, is made such as aluminium or its alloy.In order to ensure intensity higher, better reliability, 10/20 and first gold medal of chip Welding between category layer 31, between second metal layer 32 and radiator 40, can be preferably used Sn-Sb（Tin-antimony）Scolding tin.
Between the bottom electrode of each chip, it can be realized and mutual electrically connected based on the wiring pattern on the first metal layer 31 Connect.The top electrodes of each chip, can be electrically connected by bonded binding line 70 with corresponding leads ends 60, and then by drawing Foot 60 is electrically connected with external devices.Preferably, using the binding line 70 of copper.
In addition, the top electrodes of same chip or different chips, can be realized by binding line be electrically connected between each other. Alternatively, the binding line on the precalculated position of wiring pattern and the top electrodes of chip can be connected to respectively by both ends, make certain Realize and be electrically connected between the top electrodes of one chip and the bottom electrode of same chip or different chips.Alternatively, it can pass through Both ends are connected to the binding line on the precalculated position and respective pins end of wiring pattern respectively, realize the bottom electrode of chip with being somebody's turn to do The electric connection of leads ends, and then be electrically connected by leads ends and external devices.Or during can also leads ends be used as Turn, the element electrode for making to be connected to the leads ends by binding line respectively realizes electric connection between each other.In addition, suitable Position, can also use various other conductive connection structure such as sheet metal 72, to substitute the binding line used in above-mentioned each example.
In different examples, the identical insulated substrate of eight sizes can be set, make one of each unit in the present invention A igbt chip and a FWD chip share an insulated substrate；Alternatively, setting the identical insulated substrate of four sizes, make every One insulated substrate of units shared of two series connection of group；Alternatively, set the identical insulated substrate of two sizes, make four series connection One insulated substrate of units shared.Or two insulated substrates of different sizes are set, it is respectively arranged Part I 100 Two units T7, T8 of six unit T1 ~ T6 and Part II 200.Further, it is also possible to the insulated substrate of an entirety is set, Make eight unit T1 ~ T8 of the present invention disposed above together.Arrange different units, different group, no at the same time on insulated substrate With part element when, element respective electrode can be realized by the design of wiring pattern on the first metal layer of insulated substrate Connection or separation；Can be further by the utilization of the conductive connection structures such as binding line 70, sheet metal 72, to being separated on position The electrode of element be attached.
IGBT module 300 of the present invention is provided with housing 50, is e.g. made of resin material.Housing 50 is centered around Edge on 40 pedestal of radiator, each element of IGBT module 300 is stored wherein.Also, in the upper of housing 50 Side is with cover board（Not shown in figure）Covered, both connect and compose the space of the closing of encapsulation IGBT module 300.In order to ensure Insulation between each element, can use the fillers 90 such as Silica hydrogel, the epoxy resin of insulating properties, the space of the closing is filled out Fill.Each leads ends 60 can be made of the conductive metal sheet of copper or its alloy（Such as bending l-shaped, Z-type etc.）, by each pin End 60 is arranged at housing 50, is made one end of leads ends 60 be inserted into the inside of housing 50 and is used for connecting envelope in IGBT module 300 The element of dress, makes the other end extend to outside housing 50（Such as it is exposed in the upper surface of housing 50）To connect exterior device Part.
In one specific example, the bottom electrode of the igbt chip of each unit is collector, and the bottom of FWD chips is electric Pole is cathode, both are soldered to the first metal layer 31 by scolding tin 81, and are directly electrically connected by wiring pattern.Igbt chip Top electrodes be emitter and control pole, the top electrodes of FWD chips are anodes；The emitter of the igbt chip of each unit It is electrically connected with each other with the anode of FWD chips by binding line or sheet metal etc..The control pole of each igbt chip passes through binding line It is electrically connected to corresponding leads ends g1 ~ g8（If it is desired, at wiring pattern where collector or at emitter, also all may be used With with similar mode and corresponding leads ends c1 ~ c8, e1 ~ e8 lines）.
In this example, in the unit that every group two are connected, the collector of the igbt chip of a unit and the moon of FWD chips The tie point of pole, is known as the P poles node of the group；The emitter of the igbt chip of the unit and the anode of FWD chips and another list The tie point of the collector of first igbt chip and the cathode of FWD chips, is known as the intermediate potential point of the unit of two series connection of the group； The tie point of the emitter of the igbt chip of another unit and the anode of FWD chips, is known as the N poles node of the group.Wherein, respectively The intermediate potential point of group is electrically connected to corresponding leads ends Z1 ~ Z4 by binding line 70 respectively.The N poles of each group, P poles node, N poles, P poles node with other groups, parallel connection is realized by the cooperation of wiring pattern, binding line 70 etc. inside IGBT module 300； Alternatively, the N poles of each group, P poles node each with corresponding leads ends line, then outside IGBT module 300 realize with other groups Or the parallel connection of external devices；Or be combined both forms, the intra-node of some groups is in parallel, other groups Node parallel connection outside, etc..
As shown in figure 4, when the IGBT module 300 of the present invention is applied to electric automobile field, the three of Part I 100 The N poles of group, P poles node can realize parallel connection in inside modules, be individually wired to the shared N poles of Part I 100, P poles node Corresponding leads ends N1, P1；Corresponding to the N poles of one group of the residue of these leads ends N1, P1 and Part II 200, P poles node Leads ends N2, P2 can be realized in parallel in the internal or external wiring of module.
Can be between the N poles of Part I 100, corresponding leads ends N1, P1 of P poles node（Also it is Part II 200 Between N poles, corresponding leads ends N2, P2 of P poles node）One the first capacitance C1 of parallel connection.Part I 100 and Part II 200 P poles node（Corresponding pin end P1, P2）, the P poles of DC terminal are connected to by first switch S1（Cathode DC-BUS-P）；First Part 100 and the N poles node of Part II 200（Corresponding pin end N1, N2）, it is connected to the N poles of DC terminal（Anode DC-BUS- N）.
Six unit T1 ~ T6 of Part I 100 connect to form three-phase full-bridge inverting circuit, this three groups of intermediate potential point It is drawn out to outside IGBT module 300 by corresponding leads ends Z1 ~ Z3, is connected with the 3rd switch of the three-phase input end of motor respectively （In different examples can single-phase or two-phase or three-phase the 3rd switch is set, only two-phase sets the 3rd switch S3-1, S3- in this example 2）.Unit T7, T8 of two series connection of Part II 200 are connected to form Buck- with exterior the first inductance L1, the second capacitance C2 Boost lifts voltage conversion circuit 500：The intermediate potential o'clock of Part II 200 passes through the first inductance L1 and second switch S2 connections To the P poles of DC terminal；Second capacitance C2 be connected to the first inductance L1 and second switch S2 tie point and DC terminal N poles it Between.The electric power of the DC terminal output of battery is lifted after voltage conversion circuit 500 boosts by Buck-Boost is filled with the first capacitance C1 In, then be filled with from the first capacitance C1 the three-phase full-bridge inverting circuit of Part I 100 and motor M is driven to be converted into alternating current It is dynamic.
Pass through the switch of control the 3rd S3-1, S3-2 so that when controlling IGBT module 300 not to be driven to motor M, this Invention can further be operated in charge mode or discharge mode.For this reason, further make three intermediate potentials of Part I 100 It is divided into three tunnels after point connection three second inductance L2-1, L2-2, L2-3, three of first via connection electric discharge topological structure 600 the One resistance R1-1, R1-2, R1-3 and three the 4th switch S4-1, S4-2, S4-3 after, by three second resistance R2-1, R2-2, The ABC ends of charge and discharge device J1 are connected to after R2-3；After three the 5th switch S5 of the second tunnel connection charging topological structure 700 The ABC ends of charge and discharge device J1 are connected to by these three second resistances R2-1, R2-2, R2-3；3rd tunnel passes through three Composition filter circuit is grounded after three capacitance C3-1, C3-2, C3-3 and three the 6th switches S6-1, S6-2, S6-3.The charge and discharge Denso The N-terminal for putting J1 is grounded by 3rd resistor R3.
Wherein, the electric power of the DC terminal output of battery lifts voltage conversion circuit 500 by Buck-Boost（Containing IGBT module Part II 200）, the first capacitance C1, after the Part I 100 as the IGBT module of three-phase full-bridge inverting circuit, pass through Electric discharge topological structure 600 is delivered to charge and discharge device J1, for the load supplying being connected on charge and discharge device J1（Control is filled at this time Electric topological structure 700 is stopped）.It is alternatively, dynamic under the alternating-current power supply or braking state that are connected on charge and discharge device J1 Energy recovery system etc., the Part I 100 of IGBT module 300 is connected to by the topological structure 700 that charges, at this time by Part I 100 three phase full bridge circuit is used as rectification circuit, and alternating current is switched to by Buck-Boost bucks turn after direct current Change circuit 500 to be depressured, then be conveyed to battery and charge to it（The topological structure 600 of control electric discharge at this time is stopped）. Therefore, the cooperation that the present invention passes through an eight-in-one IGBT module 300 and its peripheral circuit, it is possible to achieve to two-way lifting The set of pressure, inversion and the function of rectification, can effectively meet the application requirement in electric automobile field.Eliminated in diagram to phase The devices such as the controller that inductive switch is controlled.
Although exemplary description has been carried out to inverter circuit, step-up/step-down circuit above, the octadentate of the present invention The circuit configuration of one IGBT module is not limited to foregoing circuit structure and its application, such as can also answer each unit of Part I Other electric power converting circuits for such as chopper circuit etc.Sometimes in the DC-to-AC converter of low capacity, can use MOSFET chips substitute igbt chip.Alternatively, in some instances, can be further by the drive circuit of IGBT module, control Device processed etc. encapsulates together, for forming intelligent power module（Intelligent Power Module）.As shown in Fig. 4 Go out what is encapsulated together with IGBT module, can also be the NTC for every group of correspondence configuration（Negative Temperature Coefficient, negative temperature coefficient）Thermistor, draws corresponding leads ends, for connecting temperature-detecting device etc..
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (10)

  1. A kind of 1. eight-in-one IGBT module of integrated bi-directional stepping functions, it is characterised in that
    Eight unit T1 ~ T8 are packaged with the IGBT module；
    Each unit includes an antiparallel igbt chip and a FWD chip；
    The unit that each two is serially connected is divided into one group, parallel with one another between each group；
    Wherein, this eight unit T1 ~ T8 are further divided into：
    Part I, comprising three groups of totally six unit T1 ~ T6, it connects and composes a three phase full bridge circuit；
    Part II, includes the unit T7 ~ T8 of remaining one group of two series connection, and the external devices of itself and IGBT module connect and compose One Buck-Boost lifts voltage conversion circuit.
  2. 2. eight-in-one IGBT module as claimed in claim 1, it is characterised in that
    The IGBT module is provided with insulated substrate；The upper surface of the insulated substrate has the first gold medal for being processed into wiring pattern Belong to layer；
    The igbt chip and FWD chips of one unit or multiple units, are respectively welded to the first metal layer of the insulated substrate On precalculated position so that the bottom electrode of any one chip can be by wiring pattern, from same chip or different chips Bottom electrode be electrically connected or on circuit separate.
  3. 3. eight-in-one IGBT module as claimed in claim 2, it is characterised in that
    The top electrodes of any one chip can be by bonded binding line or sheet metal, from same chip or different chips Top electrodes are electrically connected, or the pre-determined bit from the wiring pattern where the bottom electrode of same chip or different chips Put electric connection；
    The precalculated position of wiring pattern where the bottom electrode of any one chip or the top electrodes of any one chip, energy The leads ends enough set by bonded binding line and the IGBT module are electrically connected, and then with being electrically connected to the pin The external devices at end, or electrically connect with being electrically connected to the built-in component encapsulated by the IGBT module of the leads ends and realizing Connect.
  4. 4. eight-in-one IGBT module as claimed in claim 3, it is characterised in that
    The lower surface of the insulated substrate has second metal layer, is provided with the insulated substrate of igbt chip and FWD chips, passes through Second metal layer is soldered to the pedestal of radiator, and the heat that any one chip produces is transmitted to beyond IGBT module The radiator dissipated.
  5. 5. eight-in-one IGBT module as claimed in claim 4, it is characterised in that
    Between igbt chip and FWD chips and the first metal layer, between the pedestal of second metal layer and radiator, pass through tin-antimony Scolding tin is welded.
  6. 6. eight-in-one IGBT module as claimed in claim 3, it is characterised in that
    The IGBT module is provided with the housing of resin, by the built-in component encapsulated by IGBT module storage wherein；The shell Body and the cover board of cover it side, connect and compose the enclosure space for encapsulating the IGBT module；It is filled with the enclosure space Silica hydrogel or epoxy resin；
    The leads ends are arranged at housing, and one end is inserted into enclosure interior to connect the built-in component encapsulated by IGBT module, The other end extends to hull outside to connect external devices.
  7. 7. the eight-in-one IGBT module as described in any one in claim 1 ~ 6, it is characterised in that
    N poles that the Part I being connected in Part I with three groups of respective N poles, P poles node shares, P poles node, with drawing Foot N1, P1 are accordingly electrically connected；The N poles of the Part II, P poles node is corresponding to leads ends N2, P2 is electrically connected；
    First capacitance C1 is connected in parallel between leads ends N1, P1, is also connected in parallel between leads ends N2, P2；The pin End P1, P2 are connected to the cathode of the DC terminal of battery by first switch S1 respectively；Leads ends N1, N2 are respectively connected to electricity The anode of the DC terminal in pond；
    Three groups of the Part I are in totally six unit T1 ~ T6, the pin being electrically connected corresponding to the intermediate potential point of each group Z1 ~ Z3 is held, is drawn out to outside IGBT module and is connected to the 3rd switch of the three-phase input end of motor；
    The intermediate potential point of one group of the Part II, the direct current of battery is connected to by the first inductance L1 and second switch S2 The cathode at end；Second capacitance C2 be connected to the tie point of the first inductance L1 and second switch S2 and the DC terminal of battery anode it Between；
    The electric power of battery DC end output is filled with the first capacitance C1 after lifting voltage conversion circuit boosting by Buck-Boost, then It is filled into after carrying out inversion in the three-phase full-bridge inverting circuit being made of Part I, is exported to motor to it from the first capacitance C1 It is driven；
    In the unit of every group of two series connection, the tie point of the collector of the igbt chip of a unit and the cathode of FWD chips, is The P poles node of the group；The emitter of the igbt chip of the unit and the anode of FWD chips and another unit igbt chip in the group Collector and FWD chips cathode tie point, be known as the intermediate potential point of the group；The hair of the igbt chip of another unit The tie point of emitter-base bandgap grading and the anode of FWD chips, for the N poles node of the group.
  8. 8. eight-in-one IGBT module as claimed in claim 7, it is characterised in that
    The IGBT module is further connected to charge and discharge device J1 by the topological structure that discharges so that the DC terminal output of battery Electric power by Buck-Boost lift voltage conversion circuit, the first capacitance C1, Part I form three-phase full-bridge inverting circuit Afterwards, charge and discharge device J1 is delivered to by the electric discharge topological structure, for the load supplying being connected on charge and discharge device J1；
    Wherein, the leads ends Z1 ~ Z3 that is electrically connected corresponding to the intermediate potential point of the Part I each group, in corresponding connection three After a second inductance L2-1, L2-2, L2-3, further with three first resistors R1-1, R1- including of electric discharge topological structure 2nd, R1-3 and three the 4th switch S4-1, S4-2, S4-3 connection, then three second resistances are connected by the electric discharge topological structure The ABC ends of charge and discharge device J1 are connected to after R2-1, R2-2, R2-3.
  9. 9. eight-in-one IGBT module as claimed in claim 7, it is characterised in that
    The IGBT module is further connected to charge and discharge device J1 by the topological structure that charges so that is connected to charge and discharge device The kinetic energy recovery system under alternating-current power supply or braking state on J1, it is complete to be connected to composition three-phase by the charging topological structure The Part I of bridge rectification circuit, then by Buck-Boost lift voltage conversion circuit decompression after, be delivered to battery and it carried out Charging；
    Wherein, the leads ends Z1 ~ Z3 that is electrically connected corresponding to the intermediate potential point of the Part I each group, in corresponding connection three After a second inductance L2-1, L2-2, L2-3, further it is connected with three the 5th switch S5 of the topological structure that charges, then pass through institute State after electric discharge topological structure connects three second resistances R2-1, R2-2, R2-3 and be connected to the ABC ends of charge and discharge device J1.
  10. 10. eight-in-one IGBT module as claimed in claim 7, it is characterised in that
    Leads ends Z1 ~ the Z3 that is electrically connected corresponding to the intermediate potential point of the Part I each group, passes through three the 3rd capacitances Composition filter circuit is grounded after C3-1, C3-2, C3-3 and three the 6th switches S6-1, S6-2, S6-3.
CN201610163997.1A 2016-03-22 2016-03-22 A kind of eight-in-one IGBT module of integrated bi-directional stepping functions Expired - Fee Related CN105609493B (en)

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CN113130455B (en) * 2021-04-20 2023-09-12 黄山学院 Multi-unit power integrated module with high thermal reliability and processing technology thereof
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