CN207664044U - A kind of power module package structure - Google Patents
A kind of power module package structure Download PDFInfo
- Publication number
- CN207664044U CN207664044U CN201721815994.8U CN201721815994U CN207664044U CN 207664044 U CN207664044 U CN 207664044U CN 201721815994 U CN201721815994 U CN 201721815994U CN 207664044 U CN207664044 U CN 207664044U
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- CN
- China
- Prior art keywords
- direct copper
- substrate
- copper substrate
- collector
- package structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 claims abstract description 62
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052802 copper Inorganic materials 0.000 claims abstract description 54
- 239000010949 copper Substances 0.000 claims abstract description 54
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 4
- 239000010959 steel Substances 0.000 claims abstract description 4
- 238000005476 soldering Methods 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000010923 batch production Methods 0.000 abstract description 3
- 239000004411 aluminium Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model belongs to transistor arrangement technical field, and in particular to a kind of power module package structure.It includes substrate, two direct copper substrates are brazed on the substrate, igbt chip and diode chip for backlight unit are brazed on described two direct copper substrates, power terminal and control power terminal are by being brazed or being ultrasonically welded at the direct copper substrate, two direct copper substrates are respectively provided with collector, emitter and control pole, the collector of one direct copper substrate connects the emitter of another direct copper substrate by aluminum steel or copper wire, and the control pole of a direct copper substrate connects another direct copper substrate.The utility model process structure is simple, good compatibility, and individual stray parameter difference is small in batch production.
Description
Technical field
The utility model belongs to transistor arrangement technical field, and in particular to a kind of power module package structure.
Background technology
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor is (double by BJT
Polar form triode) and MOS (insulating gate type field effect tube) composition compound full-control type voltage driven type power semiconductor, it is simultaneous
There is advantage of both the high input impedance of MOSFET and the low conduction voltage drop of GTR.IGBT module is by IGBT (insulated gate bipolars
Transistor npn npn chip) it is produced by modularized semiconductor made of the encapsulation of specific circuit bridge with FWD (fly-wheel diode chip)
Product；IGBT module after encapsulation directly applies in the equipment such as frequency converter, UPS uninterruptible power supplies；Power module includes mainly base
Plate, direct copper substrate, power semiconductor chip and power terminal.When being designed to mould inner connecting structure in the block,
It to consider thermal design, structural stress design, EMC designs and circuit structure design, while to take into account reliability of technology, be produced into
The electrical characteristics consistency of this and product.
In present power module design, existing main problem is that the compatibility of product is inadequate, thermal design is unreasonable, raw
Produce of high cost, electrical characteristics consistency deficiency.Traditional handicraft is to use metal wire, and material is relatively soft, is needed to it in encapsulation process
It carries out artificial winding or fixation, interindividual variation is bigger.The weld job of common metal line wants operation and fixture design
Ask very high.
Utility model content
In view of the shortcomings of the prior art, a kind of process structure of the utility model offer is simple, good compatibility, batch
The small power module package structure of individual stray parameter difference in production.
To achieve the goals above, the utility model is to realize by the following technical solutions：
A kind of power module package structure comprising substrate is brazed two direct copper substrates on the substrate, and described two
Igbt chip and diode chip for backlight unit are brazed on a direct copper substrate, power terminal and control power terminal pass through soldering or ultrasound
It is welded in the direct copper substrate, two direct copper substrates are respectively provided with collector, emitter and control pole, an institute
The collector for stating direct copper substrate connects the emitter of another direct copper substrate, an institute by aluminum steel or copper wire
The control pole for stating direct copper substrate connects another direct copper substrate.
A kind of above-mentioned power module package structure, the collector is by soldering or ultrasonic welding by the power end
Son is drawn.
A kind of above-mentioned power module package structure, the collector are set to the middle area of the direct copper substrate
Domain.
A kind of above-mentioned power module package structure, the control pole and emitter on direct copper substrate described in each of which are equal
The both sides of the collector are set to, and two control poles and emitter are respectively arranged at opposite two of the direct copper substrate
Side.
A kind of above-mentioned power module package structure, further includes supporting rack, described in support frame as described above is connected by card slot
Control power terminal.
A kind of above-mentioned power module package structure, further includes Chip-R, the Chip-R is set to described one
In the control pole of a direct copper substrate.
Advantageous effect：
The utility model combines substrate and direct copper substrate by being brazed, and control is arranged on every piece of direct copper substrate
Pole, collector and emitter composition, the wiring of control terminal concentrate on direct copper substrate, then will control work(by soldering
Rate terminal is connected with direct copper substrate, and process structure is simple, good compatibility, and individual stray parameter difference is small in batch production.
Description of the drawings
It is described in detail the utility model with reference to the accompanying drawings and detailed description；
Fig. 1 is the structural schematic diagram of the utility model embodiment.
Fig. 2 is the connection diagram of the utility model embodiment.
Fig. 3 is the circuit topology figure of the utility model embodiment.
Specific implementation mode
To make the technical means, creative features, achievement of purpose, and effectiveness of the utility model be easy to understand, below
In conjunction with specific implementation mode, the utility model is expanded on further.
Embodiment
Referring to Fig.1, the utility model is by taking IGBT module as an example, including substrate 1, and two are brazed on the substrate 1 and is directly applied
Copper base (DBC) 2, soldering igbt chip 7 and diode chip for backlight unit 6, power terminal 3 on described two direct copper substrates (DBC) 2
Further include supporting rack on substrate 1 with control power terminal 5 by being brazed or being ultrasonically welded at the direct copper substrate (DBC) 2
4 and Chip-R 8, support frame as described above 4 connects the control power terminal 5 by card slot, and the Chip-R 8 is set to described
In the control pole of one direct copper substrate (DBC) 2.
With reference to Fig. 2, two direct copper substrates (DBC) are respectively provided with collector, emitter and control pole, each described
Control pole and emitter on direct copper substrate may be contained within the both sides of the collector, and two control poles and emitter point
It is not set to the opposite both sides of the direct copper substrate.The intermediate region of the direct copper substrate (DBC) 2 on right side is collector
12, it is drawn by the power terminal 5 by soldering or ultrasonic welding, is connected with igbt chip 7 and diode chip for backlight unit 6 by soldering
Together, it is connect with the emitter 17 of the direct copper substrate (DBC) 2 in left side by aluminum steel or copper wire 11, direct copper substrate
(DBC) 2 lower left is control pole, and wherein grid is connect simultaneously by aluminium or copper wire 9 with the direct copper substrate (DBC) 2 in left side
It is drawn by control power terminal 5；The side of emitter 13 is connected by aluminium or copper wire 10 and the direct copper substrate (DBC) 2 in left side
It connects and is drawn by control power terminal 5, the other side is drawn by soldering or ultrasonic welding by power terminal 3.Left side is directly applied
The lower zone of copper base (DBC) 2 is the join domain that the control pole of the direct copper substrate (DBC) 2 as right side is drawn；In
Between region be collector 16 and emitter 17, collector 16 is drawn by soldering or ultrasonic welding by power terminal 3, and soldering is passed through
It links together with igbt chip 7 and diode chip for backlight unit 6, the grid of upper area is by aluminium or copper wire 14,15, by control power
Terminal 5 is drawn.
With reference to Fig. 3, circuit topological structure shown in Fig. 3, A, B, C are the extraction pole of module collector pole and emitter, G, E
It is the control pole of module.
The utility model combines substrate and direct copper substrate by being brazed, and control is arranged on every piece of direct copper substrate
Pole, collector and emitter composition, the wiring of control terminal concentrate on direct copper substrate, then will control work(by soldering
Rate terminal is connected with direct copper substrate, and process structure is simple, good compatibility, and individual stray parameter difference is small in batch production.
The advantages of basic principles and main features and the utility model of the utility model have been shown and described above.One's own profession
The technical staff of industry is it should be appreciated that the present utility model is not limited to the above embodiments, described in above embodiments and description
Only illustrate the principles of the present invention, on the premise of not departing from the spirit and scope of the utility model, the utility model is also
It will have various changes and improvements, these various changes and improvements fall within the scope of the claimed invention.The utility model
Claimed range is defined by the appending claims and its equivalent thereof.
Claims (5)
1. a kind of power module package structure, it is characterised in that：Including substrate, two direct copper bases are brazed on the substrate
Plate, soldering igbt chip and diode chip for backlight unit on described two direct copper substrates, power terminal and control power terminal pass through
It is brazed or is ultrasonically welded at the direct copper substrate, two direct copper substrates are respectively provided with collector, emitter and control
Pole processed, the collector of a direct copper substrate connect the hair of another direct copper substrate by aluminum steel or copper wire
The control pole of emitter-base bandgap grading, a direct copper substrate connects another direct copper substrate.
2. a kind of power module package structure according to claim 1, it is characterised in that：The collector by soldering or
Ultrasonic welding is drawn by the power terminal.
3. a kind of power module package structure according to claim 1, it is characterised in that：The collector is set to described
The intermediate region of direct copper substrate.
4. a kind of power module package structure according to claim 1, it is characterised in that：Each direct copper substrate
On control pole and emitter may be contained within the both sides of the collector, and two control poles and emitter be respectively arranged at it is described
The opposite both sides of direct copper substrate.
5. a kind of power module package structure according to claim 1, it is characterised in that：Further include supporting rack, the branch
Support connects the control power terminal by card slot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721815994.8U CN207664044U (en) | 2017-12-22 | 2017-12-22 | A kind of power module package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721815994.8U CN207664044U (en) | 2017-12-22 | 2017-12-22 | A kind of power module package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207664044U true CN207664044U (en) | 2018-07-27 |
Family
ID=62942189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721815994.8U Expired - Fee Related CN207664044U (en) | 2017-12-22 | 2017-12-22 | A kind of power module package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207664044U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946293A (en) * | 2017-12-22 | 2018-04-20 | 江苏宏微科技股份有限公司 | A kind of power module package structure |
-
2017
- 2017-12-22 CN CN201721815994.8U patent/CN207664044U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946293A (en) * | 2017-12-22 | 2018-04-20 | 江苏宏微科技股份有限公司 | A kind of power module package structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180727 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |