CN205428913U - Power semiconductor module - Google Patents
Power semiconductor module Download PDFInfo
- Publication number
- CN205428913U CN205428913U CN201620178345.0U CN201620178345U CN205428913U CN 205428913 U CN205428913 U CN 205428913U CN 201620178345 U CN201620178345 U CN 201620178345U CN 205428913 U CN205428913 U CN 205428913U
- Authority
- CN
- China
- Prior art keywords
- signal terminal
- signal lead
- terminal
- signal
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Abstract
The utility model provides a power semiconductor module, it includes radiating basal plate, two -sided copper -clad ceramic base plate, the diode chip, the IGBT chip, the silicon gel, and a housing, the power terminal, signal lead wire and signal terminal, IGBT chip and diode chip pass through the braze joint and arrive on the two -sided copper -clad ceramic base plate, this two -sided copper -clad ceramic base plate passes through the braze joint to the radiating basal plate, realize electrical connection through the ultrasonic wave bonded of aluminum wire between the chip, the silicon gel is with the chip, aluminum wire and two -sided copper -clad ceramic base plate cover, power terminal and signal terminal carry out the input and the output of power semiconductor module power sum signal respectively, just it is connected to use resistance to weld between signal lead wire and the signal terminal, the utility model discloses having simplified power semiconductor module encapsulation in -process signal lead wire and signal terminal's connection step, having improved production efficiency and reduced manufacturing cost, improved reliability of an item, the production process is the environmental protection more.
Description
Technical field
The utility model relates to a kind of power semiconductor modular, connect the power semiconductor modular of signal lead and terminal especially with electric resistance welding, belong to semiconductor packages and power semiconductor modular preparing technical field.
Background technology
At present, when power semiconductor modular encapsulation process connects signal lead and signal terminal, the method generally using soldering.During operator uses electric cautery soldering, need first signal lead and signal terminal to be preheated, solder stick is stretched near solder joint by left hand afterwards, electric soldering iron tip is contacted solder stick by the right hand, make solder stick melt and wrap signal lead one end, scolding tin is covered on signal terminal simultaneously, signal lead and signal terminal is linked together after the scolding tin cooling of thawing.This operating process is comparatively laborious, if the unskilled situation being easily caused damage of product of action；In solder stick contact electric soldering iron tip melting process, easily produce scaling powder and the splashing of tin sweat(ing), if scaling powder and tin sweat(ing) fall chip surface or other key position, directly affect the reliability of product；Producing additionally, have smog during scolding tin, this kind of smog of Long Term Contact can affect the healthy of employee.
Connect produced problem for power model signal lead and signal terminal soldering, Improving Measurements currently mainly: training operative employee, improve the proficiency of welding process；For tin sweat(ing) spattering problem, improve scolding tin maneuver, avoid as far as possible, after scolding tin connects, increase testing sequence simultaneously, remove the tin sweat(ing) splashed and scaling powder as far as possible；Tin soldering table sets up air exhausting device, and harmful vapors is sucked exhaust system, it is to avoid operative employee sucks.But above measure can only improve to a certain extent, and step is the most loaded down with trivial details；Add testing sequence and add production cost, tin sweat(ing) and the scaling powder of splashing can not be removed completely；Set up air exhausting device still it cannot be guaranteed that operation employee will not suck the smog that soldering produces.
Summary of the invention
For the deficiency overcoming above-mentioned prior art to exist, this utility model provides a kind of and had both simplified signal lead and the Connection Step of signal terminal in module encapsulation process, improve production efficiency and reduce production cost, also improve the reliability of product, make the power semiconductor modular using electric resistance welding to connect signal lead and terminal that production process is more environmentally friendly.
This utility model be the technical scheme is that a kind of power semiconductor modular, it includes heat-radiating substrate, double-sided copper-clad ceramic substrate, diode chip for backlight unit, igbt chip, Silica hydrogel, shell, power terminal, signal lead and signal terminal, igbt chip and diode chip for backlight unit are connected on double-sided copper-clad ceramic substrate by soldering, this double-sided copper-clad ceramic substrate is connected on heat-radiating substrate by soldering, electrical connection is realized by the supersonic bonding of aluminum steel between chip, Silica hydrogel is by chip, aluminum steel and double-sided copper-clad ceramic substrate cover, described power terminal and signal terminal carry out input and the output of power semiconductor modular power and signal respectively, and between described signal lead and signal terminal, use electric resistance welding to be connected.
As preferably: described signal lead one end is connected in the upper layers of copper of double-sided copper-clad ceramic substrate by soldering, and the other end of signal lead is connected on signal terminal；
Circular silica gel tube it is cased with around described signal lead；Described signal terminal is fixed by support or shell；
Described signal lead and signal terminal be exporting by certain current energy under fixed pressure first by electric resistance welding so that signal lead and signal terminal are attached.
As preferably: described signal lead copper, aluminum, copper alloy or aluminum alloy materials are made, or signal lead electroplate, nickel or tin material；
Described signal terminal copper or Cu alloy material are made, or signal terminal electroplate, nickel or tin material；
The pressure value that resistance soldering tip applies is within 0.1 newton to 30 Newton range.
As preferably: the cross section of described signal lead is circular or triangle or polygon, and the sectional area of signal lead is in the range of 0.01 square millimeter to 10 square millimeter；
The thickness of described signal terminal is in the range of 0.1 millimeter to 3 millimeter；
The energy values of described resistance soldering tip output is within the scope of 10 joules to 300 joules.
Advantageous Effects of the present utility model is: directly signal lead and signal terminal are connected by electric resistance welding, it is not necessary to carry out the steps such as preheating, simplify operating process；Owing to welding process is without solder stick, so reducing the production cost of raw material；Owing to not using solder stick, so there is not scaling powder and tin sweat(ing) spattering problem, it is not necessary to rear road increases testing sequence, shortened process, improves production efficiency and product reliability；Owing to not using solder stick, welding process will not produce smog, production process more environmental protection.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model；
Fig. 2 is electric resistance welding attachment structure schematic diagram of the present utility model.
Detailed description of the invention
Below in conjunction with accompanying drawing, this utility model is further described.Fig. 1, shown in 2, a kind of power semiconductor modular described in the utility model, it includes heat-radiating substrate 1, double-sided copper-clad ceramic substrate 2, diode chip for backlight unit, igbt chip, Silica hydrogel 3, shell 4, power terminal 5, signal lead 6 and signal terminal 7, igbt chip and diode chip for backlight unit are connected on double-sided copper-clad ceramic substrate 2 by soldering, this double-sided copper-clad ceramic substrate 2 is connected on heat-radiating substrate 1 by soldering, electrical connection is realized by the supersonic bonding of aluminum steel 9 between chip 8, Silica hydrogel 3 is by chip 8, aluminum steel 9 and double-sided copper-clad ceramic substrate 2 cover, described power terminal 5 and signal terminal 7 carry out input and the output of power semiconductor modular power and signal respectively, and between described signal lead 6 and signal terminal 7, use electric resistance welding to be connected.
Shown in figure, described signal lead 6 one end is connected in the upper layers of copper 21 of double-sided copper-clad ceramic substrate 2 by soldering, and the other end of signal lead 6 is connected on signal terminal 5；
Circular silica gel tube it is cased with around described signal lead 6；Described signal terminal is fixed by support or shell；
Shown in Fig. 2, described signal lead 6 and signal terminal 5 be exporting by certain current energy under the pressure certain by resistance soldering tip 11 so that signal lead 6 and signal terminal 5 are attached.
Signal lead 6 copper described in the utility model, aluminum, copper alloy or aluminum alloy materials are made, or signal lead electroplate, nickel or tin material；
Described signal terminal 5 is made with copper or Cu alloy material, or signal terminal electroplate, nickel or tin material；
The pressure value that resistance soldering tip 11 applies is within 0.1 newton to 30 Newton range.
The cross section of signal lead 6 described in the utility model is circular or triangle or polygon, and the sectional area of signal lead is in the range of 0.01 square millimeter to 10 square millimeter；
The thickness of described signal terminal 5 is in the range of 0.1 millimeter to 3 millimeter；
The energy values of described resistance soldering tip 11 output is within the scope of 10 joules to 300 joules.
Embodiment: shown in Fig. 1, this utility model includes heat-radiating substrate 1, double-sided copper-clad ceramic substrate 2, diode chip for backlight unit, igbt chip, Silica hydrogel 3, shell 4, power terminal 5, signal lead 6 and signal terminal 7, igbt chip and diode chip for backlight unit are connected on double-sided copper-clad ceramic substrate 2 by soldering, double-sided copper-clad ceramic substrate 2 is connected on heat-radiating substrate 1 by soldering, electrical connection is realized by the supersonic bonding of aluminum steel 9 between chip 8, Silica hydrogel 3 is by chip 8, aluminum steel 9 and double-sided copper-clad ceramic substrate 2 cover, power terminal 5 and signal terminal 7 carry out input and the output of power semiconductor modular power and signal respectively, it is characterized in that between signal lead 6 with signal terminal 7, using electric resistance welding to be connected.One end of signal lead 6 is connected in the upper layers of copper 21 of double-sided copper-clad ceramic substrate 2 by soldering, and the other end is connected on signal terminal 5.The composition of signal lead 6 is copper, electroplate, and cross section is circular, and sectional area is 0.15 square millimeter, is cased with silica gel tube 10 about.The composition of signal terminal 7 is copper, electroplating surfaces with tin, and thickness is 0.5 millimeter.
Fig. 2 is the schematic diagram that electric resistance welding described in the utility model connects, signal lead 6 and signal terminal 7 be exporting by certain current energy under the pressure certain by resistance soldering tip 11, signal lead 6 and signal terminal 7 are attached, the pressure that resistance soldering tip 11 applies is 15 newton, and the energy of output is 120 joules.
Claims (4)
1. a power semiconductor modular, it includes heat-radiating substrate, double-sided copper-clad ceramic substrate, diode chip for backlight unit, igbt chip, Silica hydrogel, shell, power terminal, signal lead and signal terminal, igbt chip and diode chip for backlight unit are connected on double-sided copper-clad ceramic substrate by soldering, this double-sided copper-clad ceramic substrate is connected on heat-radiating substrate by soldering, electrical connection is realized by the supersonic bonding of aluminum steel between chip, Silica hydrogel is by chip, aluminum steel and double-sided copper-clad ceramic substrate cover, it is characterized in that described power terminal and signal terminal carry out input and the output of power semiconductor modular power and signal respectively, and between described signal lead and signal terminal, use electric resistance welding to be connected.
Power semiconductor modular the most according to claim 1, it is characterised in that described signal lead one end is connected in the upper layers of copper of double-sided copper-clad ceramic substrate by soldering, and the other end of signal lead is connected on signal terminal；
Circular silica gel tube it is cased with around described signal lead；Described signal terminal is fixed by support or shell；
Described signal lead and signal terminal be exporting by certain current energy under fixed pressure first by electric resistance welding so that signal lead and signal terminal are attached.
Power semiconductor modular the most according to claim 1 and 2, it is characterised in that described signal lead copper, aluminum, copper alloy or aluminum alloy materials are made, or signal lead electroplate, nickel or tin material；
Described signal terminal copper or Cu alloy material are made, or signal terminal electroplate, nickel or tin material；
The pressure value that resistance soldering tip applies is within 0.1 newton to 30 Newton range.
Power semiconductor modular the most according to claim 3, it is characterised in that the cross section of described signal lead is circular or triangle or polygon, and the sectional area of signal lead is in the range of 0.01 square millimeter to 10 square millimeter；
The thickness of described signal terminal is in the range of 0.1 millimeter to 3 millimeter；
The energy values of described resistance soldering tip output is within the scope of 10 joules to 300 joules.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620178345.0U CN205428913U (en) | 2016-03-09 | 2016-03-09 | Power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620178345.0U CN205428913U (en) | 2016-03-09 | 2016-03-09 | Power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205428913U true CN205428913U (en) | 2016-08-03 |
Family
ID=56534274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620178345.0U Active CN205428913U (en) | 2016-03-09 | 2016-03-09 | Power semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205428913U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106413377A (en) * | 2016-09-19 | 2017-02-15 | 中国电子科技集团公司第十八研究所 | Integrated welding method for surface-mounted power device |
| CN109755305A (en) * | 2017-11-02 | 2019-05-14 | 华润微电子（重庆）有限公司 | A kind of IGBT conjunction Feng Danguan |
| CN110246808A (en) * | 2018-03-09 | 2019-09-17 | 南京银茂微电子制造有限公司 | Power module and its manufacturing method with reduced junction temperature |
| CN110676184A (en) * | 2019-08-27 | 2020-01-10 | 华东光电集成器件研究所 | Interconnection method for metal shell lead |
| WO2023098184A1 (en) * | 2021-11-30 | 2023-06-08 | 北京卫星制造厂有限公司 | Package for insulated gate bipolar transistor (igbt) electrical unit |
-
2016
- 2016-03-09 CN CN201620178345.0U patent/CN205428913U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106413377A (en) * | 2016-09-19 | 2017-02-15 | 中国电子科技集团公司第十八研究所 | Integrated welding method for surface-mounted power device |
| CN109755305A (en) * | 2017-11-02 | 2019-05-14 | 华润微电子（重庆）有限公司 | A kind of IGBT conjunction Feng Danguan |
| CN110246808A (en) * | 2018-03-09 | 2019-09-17 | 南京银茂微电子制造有限公司 | Power module and its manufacturing method with reduced junction temperature |
| CN110246808B (en) * | 2018-03-09 | 2021-08-10 | 南京银茂微电子制造有限公司 | Power module with reduced junction temperature and method of manufacturing the same |
| CN110676184A (en) * | 2019-08-27 | 2020-01-10 | 华东光电集成器件研究所 | Interconnection method for metal shell lead |
| CN110676184B (en) * | 2019-08-27 | 2021-11-02 | 华东光电集成器件研究所 | Interconnection method for metal shell lead |
| WO2023098184A1 (en) * | 2021-11-30 | 2023-06-08 | 北京卫星制造厂有限公司 | Package for insulated gate bipolar transistor (igbt) electrical unit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205428913U (en) | Power semiconductor module | |
| CN109256337B (en) | Eutectic welding device and method for millimeter-scale elements with circumferences | |
| CN105655306A (en) | Double-side welding and single-side heat radiation power module integrated on heat radiation substrate | |
| CN104392942A (en) | Method for encapsulating high-power IGBT device through performing non-pressure low-temperature sintering on nano silver soldering paste | |
| CN103140103A (en) | Encapsulation structure of intelligent power module | |
| CN106158801A (en) | A kind of SPM and manufacture method thereof | |
| CN205881952U (en) | Led module | |
| CN103730451A (en) | Multi-chip packaging body and packaging method | |
| CN111640725A (en) | Chip mounting structure, semiconductor product and processing technology thereof | |
| CN109411372A (en) | A method of based on covering copper ceramic substrate uniform current assisted sintering nano mattisolda temperature field | |
| CN207602558U (en) | A kind of grafting power module package device | |
| CN107482001A (en) | A kind of super high power COB light source and its manufacture craft | |
| CN114899162A (en) | Module and manufacturing method thereof | |
| TWI237409B (en) | Method of fabricating light emitting diode (LED) | |
| CN108110459B (en) | High-power IPM module terminal connection structure | |
| CN103779247B (en) | A kind of method that power semiconductor modular terminal soldering is received substrate | |
| CN106340581A (en) | CSP lamp bead packaging method | |
| CN205542894U (en) | Light -emitting device | |
| CN103296153A (en) | Encapsulating method for LED chips | |
| CN207250511U (en) | A kind of super high power COB light source | |
| CN104600047A (en) | Power module and packaging method thereof | |
| CN110416101A (en) | Use sintering silver paste as the power module copper sheet welding procedure of bonding agent | |
| EP2768015A1 (en) | Gold/silicon eutectic chip soldering method and transistor | |
| KR20150114045A (en) | Wire bonding process for printed circuit board and wire bonding structure thereof | |
| CN106783791A (en) | A kind of high-power integrated device manufacture methods of DFN and lead frame |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |