CN109256337B - Eutectic welding device and method for millimeter-scale elements with circumferences - Google Patents
Eutectic welding device and method for millimeter-scale elements with circumferences Download PDFInfo
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- CN109256337B CN109256337B CN201810940681.8A CN201810940681A CN109256337B CN 109256337 B CN109256337 B CN 109256337B CN 201810940681 A CN201810940681 A CN 201810940681A CN 109256337 B CN109256337 B CN 109256337B
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- 230000005496 eutectics Effects 0.000 title claims abstract description 70
- 238000003466 welding Methods 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000005476 soldering Methods 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 230000007704 transition Effects 0.000 claims abstract description 41
- 239000000919 ceramic Substances 0.000 claims abstract description 39
- 238000003825 pressing Methods 0.000 claims abstract description 34
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000005245 sintering Methods 0.000 claims abstract description 10
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000011152 fibreglass Substances 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 3
- 238000007781 pre-processing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000003044 adaptive effect Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 238000007689 inspection Methods 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/203—Fluxing, i.e. applying flux onto surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/206—Cleaning
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
The invention discloses a peripheral millimeter-scale element eutectic welding device which comprises a bottom plate, wherein the surface of the bottom plate is provided with a group of rectangular positioning grooves, each rectangular positioning groove comprises an upper positioning groove and a lower positioning groove which are communicated to form a stepped groove, and the lower positioning groove is used for accommodating a ceramic substrate; the welding device also comprises a positioning plate and a pressing plate, wherein the positioning plate can be embedded in the upper positioning groove, a group of positioning holes are formed in the surface of the positioning plate, and the positioning holes are distributed according to the positions of the elements to be welded; a group of pressing blocks are arranged on the bottom surface of the pressing plate and are matched with the positioning holes in a one-to-one correspondence manner; the eutectic welding is finished through the steps of pretreatment, taking of soldering lugs, placing of a substrate, placing of an element to be welded, eutectic sintering, taking of a workpiece, placing of a bonding transition piece, eutectic sintering of the bonding transition piece, taking of the workpiece and cleaning; the invention realizes that all bonding transition pieces or semiconductor tube cores are flat and consistent in height after welding, meets the requirements of welding inspection and bonding process, and improves the bonding yield of thick wires.
Description
Technical Field
The invention relates to the technical field of microelectronic assembly, in particular to a perimeter millimeter-scale element eutectic welding device and a perimeter millimeter-scale element eutectic welding method.
Background
In the microelectronic assembly process, the semiconductor chip and the peripheral circuits are mounted on a desired carrier (such as a ceramic substrate, a package, etc.) by mainly using two methods, namely, conductive adhesive (epoxy) bonding and eutectic (eutectic) sintering. The conductive adhesive bonding has the advantages of simple process, high speed, low cost, repairability, no special requirement on the back metallization of the die due to low-temperature bonding and the like. However, when the product has a high power requirement, the electrical resistivity and the thermal conductivity of the conductive adhesive are large, so that the loss is large, the thermal resistance of the power tube core is large, the junction temperature is high, and the power performance, the reliability and the like of the power tube core are affected.
Therefore, in a thick film hybrid integrated high power circuit, a eutectic sintering method is often adopted to mount a power chip on a corresponding carrier. In order to meet the requirement of large current, the power chip is bonded by thick wires. However, in addition to the power chip, it is necessary to solder a small-sized element having a perimeter of millimeter by eutectic or soldering because of the practical need to reduce the on-resistance and the metal bonding of aluminum and aluminum, but since the small-sized element having a perimeter of millimeter, i.e., a side length of 1mm to 2mm is small in size, high in distribution density, difficult in designing a pressurized eutectic device, and poor in feasibility, the small-sized element is generally soldered.
For example, since aluminum metal cannot be deposited on a typical carrier such as a ceramic substrate, but it is necessary to preferentially select the same metal bonding to ensure bonding reliability, a method of soldering a copper-aluminum transition piece (aluminum layer up) on the carrier is generally adopted, and then coarse aluminum wire bonding interconnection is performed on the surface of the bonding transition piece to realize aluminum-aluminum same metal bonding. In actual operation, because the power chip is eutectic welded on the carrier, solder paste skip printing cannot be carried out, and only after the solder paste is manually spotted, the bonding transition piece is welded by using a hot plate to carry out reflow welding. However, the manual solder paste dispensing can not make the solder surface flat, the solder height is consistent, after the solder paste is heated to the welding temperature, the bonding transition piece must be flattened one by adopting high-temperature-resistant materials, and the flatness of the bonding transition piece after welding is ensured, so as to meet the process requirements of welding inspection and thick wire bonding on the flatness, and in the welding process, because the number of the bonding transition pieces is large, the transition piece floating on the solder is caused to move due to the shrinkage phenomenon of the solder under the action of the surface tension, and when the transition piece is adjusted, the transition piece can not be considered end to end, and the surface is good. Therefore, it is difficult to ensure that all bonding pads remain flat after bonding. The unevenness of the bonding transition piece can cause the bonding rework to be obviously increased, and even part of circuits are scrapped because the rework frequency of the same position reaches twice and exceeds the relevant regulation of the national military standard.
In addition, in the process design, in order to improve the reliability of the power performance of the product, a soldering welding process is generally adopted for the semiconductor tube core with the small size of the perimeter millimeter level, but the tube core has the same problems as the bonding transition piece in the soldering welding due to the small size and the large number of the tube cores.
Disclosure of Invention
The invention aims to provide a perimeter millimeter-scale element eutectic welding device and a welding method, which can realize that all bonding transition pieces or semiconductor tube cores are flat and consistent in height after welding, meet the requirements of welding inspection and bonding process and improve the yield of thick wire bonding.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a peripheral millimeter-scale element eutectic welding device comprises a bottom plate, wherein a group of rectangular positioning grooves are formed in the surface of the bottom plate, each rectangular positioning groove comprises an upper positioning groove and a lower positioning groove which are communicated to form a stepped groove, and the lower positioning groove is used for accommodating a ceramic substrate; the welding device also comprises a positioning plate and a pressing plate, wherein the positioning plate can be embedded in the upper positioning groove, a group of positioning holes are formed in the surface of the positioning plate, and the positioning holes are distributed according to the positions of the elements to be welded; the bottom surface of the pressing plate is provided with a group of pressing blocks, and the pressing blocks are matched with the positioning holes in a one-to-one correspondence mode.
Furthermore, the surface of the positioning plate is also provided with a transition piece opening.
The invention also provides a eutectic welding method for the perimeter millimeter-scale element, which comprises the following steps:
s1, pre-processing,
polishing the ceramic substrate; polishing the welding sheet, and carrying out alcohol ultrasonic cleaning or plasma cleaning; simultaneously ultrasonically cleaning the millimeter-scale element eutectic bonding device of claim 1;
s2, taking the soldering lug,
cutting the soldering lug to be adaptive to the size of the chip to be welded;
s3, placing the substrate,
placing the ceramic substrate flat in the lower positioning groove of claim 1, and then placing the positioning plate on the ceramic substrate;
s4, placing the elements to be welded,
placing a soldering lug in the center of the corresponding bonding pad of the ceramic substrate, then placing a chip to be welded in the center of the soldering lug, and then placing a pressing plate, wherein the pressing block of the pressing plate corresponds to the chip to be welded;
s5, eutectic sintering is carried out,
moving the welding assembly assembled in the step S4 into an atmosphere eutectic furnace, and performing eutectic welding according to a eutectic welding program;
s6, taking out the parts,
taking out the welding assembly which completes eutectic welding from the atmosphere eutectic furnace, and sequentially unloading the pressing plate, the positioning plate and the ceramic substrate;
s7, pre-tinning the bonding pad,
the method comprises the following steps of (1) dispensing soldering paste at the position of a transition piece to be welded on a ceramic substrate by adopting manual electric soldering paste or soldering paste instillation and the like, and melting and attaching the soldering paste on a welding pad by adopting a hot plate reflow soldering or reflow soldering mode;
s8, placing a bonding transition piece,
horizontally placing the ceramic substrate which is pre-tinned in the lower positioning groove, and then placing the positioning plate on the ceramic substrate; placing the bonding transition pieces in the openings of the positioning plates one by one, and then placing the pressing plates;
s9, eutectic sintering of the bonding transition piece,
moving the welding assembly assembled in the step S7 into an atmosphere eutectic furnace, and performing eutectic welding according to a eutectic welding program; re-melting the soldering tin on the ceramic substrate, and keeping the bonding transition piece flat under the action of the pressing plate;
s10, taking out the parts,
taking out the welding assembly which completes eutectic welding from the atmosphere eutectic furnace, and sequentially unloading the pressing plate, the positioning plate and the ceramic substrate;
s11, cleaning the glass fiber reinforced plastic pipe,
and cleaning the ceramic substrate subjected to atmosphere eutectic, and removing the soldering flux and the surplus substances.
The invention has the beneficial effects that:
firstly, all bonding transition pieces or semiconductor tube cores are integrally heated and integrally welded, the consistency is good, and the defect that the adjustment transition pieces cannot be considered end to end when hot plate reflow welding is carried out is avoided;
secondly, the bonding transition piece or the semiconductor tube core is wholly pressurized through a specially designed pressurizing device, and under the condition that the thicknesses of the bonding transition piece and the semiconductor tube core are basically consistent, the heights of the transition piece or the chip are kept consistent in the remelting pressurizing process by utilizing the thickness of the solder, so that all the bonding transition pieces or the semiconductor tube cores are flat and consistent after welding, the welding inspection and the bonding process requirements are met, and the thick wire bonding yield is improved;
positioning is carried out on the positioning plate, the ceramic substrate is punched, and compared with a eutectic tool manufactured by a common graphite material machine, the positioning is more accurate, and no impurities such as graphite dust escape;
the positioning plate reserves the hole opening position of the power chip, the same positioning plate can be used for completing the positioning eutectic welding of the power chip at higher temperature by utilizing the hole opening position, and the raised power chip does not influence the subsequent welding effect to weld a small-size transition piece or a semiconductor tube core at lower temperature because the positioning plate reserves the hole opening position of the power chip; the design of this locating plate can satisfy promptly and successively twice eutectic bonding of accomplishing with the same locating plate.
Drawings
The invention is further illustrated with reference to the following figures and examples:
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a top view of the base plate of the present invention;
FIG. 3 is a cross-sectional view A-A of FIG. 2;
FIG. 4 is a schematic view of a locating plate of the present invention;
FIG. 5 is a schematic view of a platen of the present invention;
fig. 6 is a bottom view of fig. 5.
Detailed Description
Referring to fig. 1 to 3, the invention provides a eutectic soldering device for millimeter-scale components, which includes a bottom plate 1, wherein a set of rectangular positioning grooves is formed on a surface of the bottom plate 1, the rectangular positioning grooves include an upper positioning groove 2a and a lower positioning groove 2b which are communicated to form a stepped groove, and nine rectangular positioning grooves are arranged in a matrix manner in this embodiment. The lower positioning groove 2b is used for accommodating the ceramic substrate 3; as shown in fig. 4 to 6, the welding device further includes a positioning plate 4 and a pressing plate 5, the positioning plate 4 can be embedded in the upper positioning groove 2a, a group of positioning holes 6 are formed in the surface of the positioning plate 4, and the positioning holes 6 are distributed according to the positions of the chips to be welded; the surface of the positioning plate 4 is also provided with a transition piece opening 7; laser drilling is adopted for both the positioning hole 6 and the transition piece opening 7; the bottom surface of the pressing plate 5 is provided with a group of pressing blocks 8, and the pressing blocks 8 are matched with the positioning holes 6 in a one-to-one correspondence mode.
The invention also provides a eutectic welding method for the perimeter millimeter-scale element, which comprises the following steps:
s1, pre-processing,
polishing the ceramic substrate; polishing the welding sheet, and carrying out alcohol ultrasonic cleaning or plasma cleaning; simultaneously carrying out ultrasonic cleaning on the perimeter millimeter-scale element eutectic welding device;
s2, taking the soldering lug,
putting clean latex finger sleeves on two hands, cutting the SnAg soldering lug into soldering lugs with the length and width of which are the same as or slightly smaller than the size of a chip to be welded by using a surgical blade, and placing the soldering lugs into a holding tray;
s3, placing the substrate,
horizontally placing the ceramic substrate 3 in the lower positioning groove 2b, and then placing the positioning plate 4 on the ceramic substrate 3;
s4, placing the elements to be welded,
placing a soldering lug in the center of the corresponding bonding pad of the ceramic substrate, then placing the chip to be welded in the center of the soldering lug, then placing a pressing plate 5, and enabling a pressing block 8 of the pressing plate 5 to correspond to the chip to be welded;
s5, eutectic sintering is carried out,
transferring the welding assembly assembled in the step S4 into an atmosphere eutectic furnace, and performing eutectic welding according to a eutectic welding flow; eutectic welding can be carried out according to the following process: vacuumizing to 5Pa → filling nitrogen → preheating (50 ℃/min) → heating to peak (20 ℃/min) → peak temperature keeping for 50s → keeping low-flow filling nitrogen (2 l/min) → peak temperature keeping for 150s → filling nitrogen for cooling (50 ℃/min);
s6, taking out the parts,
taking out the welding assembly which completes eutectic welding from the atmosphere eutectic furnace, and sequentially unloading the pressing plate, the positioning plate and the ceramic substrate;
s7, pre-tinning the bonding pad,
the method comprises the following steps of (1) dispensing soldering paste at the position of a transition piece to be welded on a ceramic substrate by adopting manual electric soldering paste or soldering paste instillation and the like, and melting and attaching the soldering paste on a welding pad by adopting a hot plate reflow soldering or reflow soldering mode;
s8, placing a bonding transition piece,
horizontally placing the ceramic substrate which is pre-tinned in the lower positioning groove 2b, and then placing the positioning plate 4 on the ceramic substrate; placing the bonding transition pieces in the transition piece openings 7 of the positioning plate one by one, and then placing the pressing plate 5;
s9, eutectic sintering of the bonding transition piece,
transferring the welding assembly assembled in the step S7 into an atmosphere eutectic furnace, and performing eutectic welding according to a eutectic welding flow; re-melting the soldering tin on the ceramic substrate, and keeping the bonding transition piece flat under the action of the pressing plate; eutectic welding can be carried out according to the following process: vacuumizing to 5Pa → filling nitrogen → preheating (50 ℃/min) → heating to peak (20 ℃/min) → peak temperature keeping for 50s → keeping low-flow filling nitrogen (2 l/min) → peak temperature keeping for 150s → filling nitrogen for cooling (50 ℃/min);
s10, taking out the parts,
taking out the welding assembly which completes eutectic welding from the atmosphere eutectic furnace, and sequentially unloading the pressing plate, the positioning plate and the ceramic substrate;
s11, cleaning the glass fiber reinforced plastic pipe,
and cleaning the ceramic substrate subjected to atmosphere eutectic, and removing the soldering flux and the surplus substances.
The steps S1 to S6 are the atmosphere eutectic soldering of the power chip, the melting point of the applicable eutectic solder is higher than the melting point of the conventional solder paste material by more than 30 ℃, wherein the melting point of the Sn62Pb36Ag2 type solder paste is about 183 ℃.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner; those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention.
Claims (2)
1. A millimeter-scale element eutectic welding device is characterized by comprising a bottom plate, wherein the surface of the bottom plate is provided with a group of rectangular positioning grooves, each rectangular positioning groove comprises an upper positioning groove and a lower positioning groove which are communicated to form a stepped groove, and the lower positioning groove is used for accommodating a ceramic substrate; the welding device also comprises a positioning plate and a pressing plate, wherein the positioning plate can be embedded in the upper positioning groove, a group of positioning holes are formed in the surface of the positioning plate, and the positioning holes are distributed according to the positions of the elements to be welded; a group of pressing blocks are arranged on the bottom surface of the pressing plate and are matched with the positioning holes in a one-to-one correspondence manner; the surface of the positioning plate is also provided with a transition piece opening.
2. A millimeter-scale element eutectic welding method is characterized by comprising the following steps:
s1, pre-processing,
polishing the ceramic substrate; polishing the welding sheet, and carrying out alcohol ultrasonic cleaning or plasma cleaning; simultaneously ultrasonically cleaning the millimeter-scale element eutectic bonding device of claim 1;
s2, taking the soldering lug,
cutting the soldering lug to be adaptive to the size of the chip to be welded;
s3, placing the substrate,
placing the ceramic substrate flat in the lower positioning groove of claim 1, and then placing the positioning plate on the ceramic substrate;
s4, placing the elements to be welded,
placing a soldering lug in the center of the corresponding bonding pad of the ceramic substrate, then placing a chip to be welded in the center of the soldering lug, and then placing a pressing plate, wherein the pressing block of the pressing plate corresponds to the chip to be welded;
s5, eutectic sintering is carried out,
moving the welding assembly assembled in the step S4 into an atmosphere eutectic furnace, and performing eutectic welding according to a eutectic welding program;
s6, taking out the parts,
taking out the welding assembly which completes eutectic welding from the atmosphere eutectic furnace, and sequentially unloading the pressing plate, the positioning plate and the ceramic substrate;
s7, pre-tinning the bonding pad,
spot welding of soldering paste on the position of the transition piece to be welded on the ceramic substrate by adopting a manual electric soldering paste or a soldering paste instillation mode, and melting and attaching of the soldering paste on the soldering pad by adopting a hot plate reflow soldering or reflow soldering mode;
s8, placing a bonding transition piece,
placing the ceramic substrate flat in the lower positioning groove of claim 1, and then placing the positioning plate on the ceramic substrate; placing the bonding transition pieces in the openings of the positioning plates one by one, and then placing the pressing plates;
s9, eutectic sintering of the bonding transition piece,
moving the welding assembly assembled in the step S7 into an atmosphere eutectic furnace, and performing eutectic welding according to a eutectic welding program;
s10, taking out the parts,
taking out the welding assembly which completes eutectic welding from the atmosphere eutectic furnace, and sequentially unloading the pressing plate, the positioning plate and the ceramic substrate;
s11, cleaning the glass fiber reinforced plastic pipe,
and cleaning the ceramic substrate subjected to atmosphere eutectic, and removing the soldering flux and the surplus substances.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810940681.8A CN109256337B (en) | 2018-08-17 | 2018-08-17 | Eutectic welding device and method for millimeter-scale elements with circumferences |
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| CN201810940681.8A CN109256337B (en) | 2018-08-17 | 2018-08-17 | Eutectic welding device and method for millimeter-scale elements with circumferences |
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| CN109256337B true CN109256337B (en) | 2020-02-11 |
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| CN110587064B (en) * | 2019-09-30 | 2021-07-27 | 北京无线电测量研究所 | MCM eutectic brazing tool and eutectic brazing process |
| CN110666269B (en) * | 2019-10-11 | 2021-06-25 | 华东光电集成器件研究所 | Combined eutectic welding device and using method thereof |
| CN111180318B (en) * | 2020-01-06 | 2023-08-11 | 贵州振华风光半导体股份有限公司 | Method for improving bonding quality in integrated circuit by in-situ bonding technology |
| CN112139623A (en) * | 2020-08-14 | 2020-12-29 | 武汉光迅科技股份有限公司 | Optical device assembly, reflow soldering equipment of optical device assembly and reflow soldering process method |
| CN112289695B (en) * | 2020-09-22 | 2023-03-21 | 中国电子科技集团公司第二十九研究所 | Universal eutectic device and eutectic method for multi-weldment automatic eutectic |
| CN114309854A (en) * | 2021-12-28 | 2022-04-12 | 中国科学院空天信息创新研究院 | Method and tool suitable for integrated brazing of multiple substrates of box body with two-sided open cavity |
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| CN202373622U (en) * | 2011-12-09 | 2012-08-08 | 彩虹集团公司 | Eutectic clamp for integration sealing of multiple light-emitting diodes (LEDs) |
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| CN104410261A (en) * | 2014-11-07 | 2015-03-11 | 中国兵器工业集团第二一四研究所苏州研发中心 | Aluminum nitride substrate based frequency limiting power module |
| CN105226030B (en) * | 2015-10-13 | 2018-12-18 | 济南市半导体元件实验所 | High-power silicon carbide diode encapsulating structure and packaging technology |
| CN105789071A (en) * | 2016-03-29 | 2016-07-20 | 中国电子科技集团公司第二十九研究所 | Device used for realizing microwave chip eutectic pressurization and pressurization method |
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Address after: No. 2016, Tanghe Road, economic development zone, Bengbu City, Anhui Province 233000 Patentee after: Anhui North Microelectronics Research Institute Group Co.,Ltd. Address before: No. 2016, Tanghe Road, economic development zone, Bengbu City, Anhui Province 233000 Patentee before: NORTH ELECTRON RESEARCH INSTITUTE ANHUI Co.,Ltd. |