CN104410261A - Aluminum nitride substrate based frequency limiting power module - Google Patents
Aluminum nitride substrate based frequency limiting power module Download PDFInfo
- Publication number
- CN104410261A CN104410261A CN201410625420.9A CN201410625420A CN104410261A CN 104410261 A CN104410261 A CN 104410261A CN 201410625420 A CN201410625420 A CN 201410625420A CN 104410261 A CN104410261 A CN 104410261A
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- China
- Prior art keywords
- nitride substrate
- oxide
- semiconductor
- metal
- power
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Abstract
The invention discloses an aluminum nitride substrate based frequency limiting power module, which comprises cascaded power MOS (metal oxide semiconductor) transistors, an isolation diode array and a gate driver, wherein the cascaded power MOS transistors, the isolation diode array and the gate driver are assembled to an aluminum nitride substrate through a soldering process and electrically connected through homogeneous bonding; external control signals drive the cascaded MOS transistors to be conducted or cut off through the gate driver, and redundant current of a battery is discharged when the cascaded MOS transistors are conducted; and a power supply is outputted to a load system through the isolation diode array when the cascaded MOS transistors are cut off. The frequency limiting power module disclosed by the invention has the advantages of high quality level and good heat dissipation and has an ionizing radiation resisting ability and single particle resistance, the reliability is high, and the reliable operating life reaches 15 years. The aluminum nitride substrate based frequency limiting power module has the characteristics of flexible use and high universality.
Description
Technical field
The present invention relates to a kind of limit based on aluminium nitride substrate power model frequently, high-power output, low thermal resistance, particularly one meet space environment and use power driver module reliably and with long-term.
Background technology
In space system, because the demand of the operating current of power supply is increasing, the operating time of system is more and more longer, and the power capacity of the power model of needs requires large, module efficiency, power consumption requirements be high,
The life-span reliably and with long-term of module is also more and more higher, and requires that the thermal resistance of module is little, rapid heat dissipation, has ionizing radiation-resistant, Anti-single particle radiation simultaneously.
Power model can provide 120V 10A continuously or pulse current to custom system, and according to Systematical control, excess charge can be released to power supply ground.Therefore, how to design the limit power model frequently of highly reliable (anti-space adverse circumstances, high efficiency and heat radiation, long-term work), become the direction that those skilled in the art make great efforts.
Summary of the invention
Object of the present invention is exactly to solve the shortcoming that similar product thermal resistance is high, single channel power output is low, voltage is low, the reliably working life-span is short, provides the power driving circuit of a kind of reliably working, life-span length, the various radiation in anti-space, high voltage, high-power output.
The technical solution realizing the object of the invention is:
The present invention relates to a kind of limit based on aluminium nitride substrate power model (highly reliable hybrid integrated circuit) frequently, based on the limit power model frequently of aluminium nitride substrate, it is characterized in that, comprise the power MOS pipe of cascade, isolating diode array, raster data model, concatenated power metal-oxide-semiconductor, isolating diode array, raster data model are assembled into aluminium nitride substrate by soldering process, carry out electricity connection by homogeneity bonding;
External control signal through raster data model, the conducting of cascaded power MOS pipe or cut-off,
During the conducting of cascade metal-oxide-semiconductor, the unwanted currents of battery is released; During the cut-off of cascade metal-oxide-semiconductor, power supply exports to load system by isolating diode display.
The structure of isolating diode array is: first group of 4 diodes in parallel, and second group of 4 diodes in parallel, 2 groups of parallel-connection structures are connected again.
Homogeneity bonding is aluminium aluminium bonding or golden gold bonding.
Control signal is the signal of frequency and change in duty cycle, and low level is 0V, high level 8V, and frequency is 0 ~ 10k, the continuously adjustable square-wave voltage of duty ratio 0 ~ 100%.The pressure drop of cascade metal-oxide-semiconductor is when operating current IDS=7.2A, VGS=8V, and conduction voltage drop is tested at being not more than 1V(ambient temperature 22 DEG C ± 5 DEG C); Power isolating diode requires first group of 4 parallel connection, second group of 4 parallel connection, and 2 groups of parallel-connection structures carry out series connection again and use, and requires that isolating diode conducting overall presure drop when operating current 7.2A is tested at being not more than 1.5V(ambient temperature 22 DEG C ± 5 DEG C); The maximum hear rate of module is not more than 11W(calculated value, ambient temperature 22 DEG C ± 5 DEG C).
Raster data model makes the gate drive voltage of the metal-oxide-semiconductor of rear class be greater than the metal-oxide-semiconductor gate drive voltage of prime all the time, and the metal-oxide-semiconductor of the metal-oxide-semiconductor of rear class than prime in switch is opened in advance, postpones to turn off.
Secure isolation is carried out in the higher-pressure region formed in module and low-pressure area, and Secure isolation spacing is greater than 1.5 millimeters, meets the safety requirements of space environment.
External control signal is the signal that frequency and duty ratio are change, and through raster data model, the conducting of cascaded power MOS pipe, releases the unwanted currents of battery, to ensure that output voltage is in suitable scope.When control signal is high level, the conducting of cascade metal-oxide-semiconductor, when control signal is low level, cascade metal-oxide-semiconductor exports to load system by, power supply by isolating diode display.
The isolated array that the present invention adopts the cascade metal-oxide-semiconductor chip of low channel resistance, diode chip for backlight unit is formed; Chip electrical connection adopts homogeneity bonding (aluminium aluminium bonding and golden gold bonding), the assembling of chip eutectic welding, and power stage adopts many bonding wire parallel-connection structures to reduce and exports internal resistance, and ALN substrate piecemeal welding assembly reduces the structural design of thermal stress.
Prime drive singal produces the disconnected, logical of the power MOS pipe of PWM Waveform Control series connection, controls main power source and is connected with electronic system (in parallel with electric capacity battle array).When between PWM waveform low period, metal-oxide-semiconductor closes, and main power source is connected with electronic system (in parallel with electric capacity battle array), and when between PWM waveform high period, metal-oxide-semiconductor is open-minded, and main power source is released over the ground.
The advantage of limit frequency power model of the present invention is high-quality level, good heat radiating.Have ionizing radiation-resistant ability (100kRAD), anti-single particle (75MeV.cm2/mg), high reliability, the reliably working life-span reaches 15 years.Have and use flexibly, the feature of highly versatile.
Accompanying drawing explanation
Fig. 1 is module principle block diagram;
Fig. 2 is limit of the present invention power principle figure frequently;
Fig. 3 is gate driver circuit figure, is the raster data model of metal-oxide-semiconductor Q1, Q2 in dotted line frame respectively.
Embodiment
As shown in Figure 1, limit based on aluminium nitride substrate of the present invention is power model (highly reliable hybrid integrated circuit) frequently, be made up of concatenated power metal-oxide-semiconductor, isolating diode array, raster data model and absorbing circuit etc., concatenated power metal-oxide-semiconductor, isolating diode array, raster data model and absorbing circuit element are assembled into aluminium nitride substrate by soldering process, and chip completes electricity by gold wire bonding, Si-Al wire bonding and connects.
As shown in Figure 2, limit of the present invention is power model frequently, concrete, comprises raster data model 1, two metal-oxide-semiconductor Q1, Q2, isolating diode array 2, charge discharging resisting resistance R4.Resistance R3 is metal-oxide-semiconductor Q1 gate charge absorption resistance, and resistance R3 and R4 falls for metal-oxide-semiconductor Q1 grid source coating-forming voltage again.The source electrode of metal-oxide-semiconductor Q1 is connected to form cascaded structure with the drain electrode with metal-oxide-semiconductor Q2, and form power drain switch, the drain electrode of metal-oxide-semiconductor Q1 is connected with the input of isolating diode array 2, and the output of isolating diode array 2 is connected with load, realizes power stage.
Raster data model 1 comprises the driving of metal-oxide-semiconductor Q1 and the driving of metal-oxide-semiconductor Q2, refers to Fig. 3.
Raster data model 1 realizes the driving to metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, logic control signal is simultaneously from the pwm signal of control input end, through resistance R1, metal-oxide-semiconductor Q2 grid is driven, metal-oxide-semiconductor Q1 raster data model is realized again by metal-oxide-semiconductor Q1 gate series switching diode V1, raster data model 1 realizes the gate drive voltage of metal-oxide-semiconductor Q2 than metal-oxide-semiconductor Q1 gate drive voltage high 1.1V all the time, metal-oxide-semiconductor Q2 is opened in advance than metal-oxide-semiconductor Q1 in switch, postpones to turn off.Anti-interference for increasing grid, design capacitance C1, C2 series filtering, the Redundancy Design that series capacitance structure is avoided capacitance short-circuit to lose efficacy and taked.Electric capacity C1, C2 two ends parallel resistance R2 of series connection, resistance R2 is gate charge bleed-off circuit, adjustment switching characteristic.
Module package form adopts the flat power shell encapsulation of metal shell air-tightness; Power chip, crin bonding transition plate and substrate, substrate and shell and outer lead adopt soldering to interconnect; Eutectic weldering realizes welding between substrate with metal shell base.
The present invention is used for spacecraft power supply subsystem, and after adopting Reliable Design to ensure that module stands various environmental stress for a long time, parameter still can not be drifted about.Inside modules device all carries out derate 1 grade design, and Flouride-resistani acid phesphatase designs, heat dissipation design, thermal resistance 0.6724 DEG C/W.
Claims (6)
1. the limit based on aluminium nitride substrate power model frequently, it is characterized in that, comprise the power MOS pipe of cascade, isolating diode array, raster data model, concatenated power metal-oxide-semiconductor, isolating diode array, raster data model are assembled into aluminium nitride substrate by soldering process, carry out electricity connection by homogeneity bonding;
External control signal through raster data model, the conducting of cascaded power MOS pipe or cut-off,
During the conducting of cascade metal-oxide-semiconductor, the unwanted currents of battery is released; During the cut-off of cascade metal-oxide-semiconductor, power supply exports to load system by isolating diode display.
2. the limit based on aluminium nitride substrate according to claim 1 power model frequently, it is characterized in that, the structure of isolating diode array is: first group of 4 diodes in parallel, and second group of 4 diodes in parallel, 2 groups of parallel-connection structures are connected again.
3. the limit based on aluminium nitride substrate according to claim 1 power model frequently, it is characterized in that, homogeneity bonding is aluminium aluminium bonding or golden gold bonding.
4. the limit based on aluminium nitride substrate according to claim 1 power model frequently, it is characterized in that, control signal is the signal of frequency and change in duty cycle, and low level is 0V, high level 8V, frequency is 0 ~ 10k, the continuously adjustable square-wave voltage of duty ratio 0 ~ 100%.
5. the limit based on aluminium nitride substrate according to claim 1 power model frequently, it is characterized in that, raster data model makes the gate drive voltage of the metal-oxide-semiconductor of rear class be greater than the metal-oxide-semiconductor gate drive voltage of prime all the time, the metal-oxide-semiconductor of the metal-oxide-semiconductor of rear class than prime in switch is opened in advance, postpones to turn off.
6. the limit based on aluminium nitride substrate according to claim 1 power model frequently, it is characterized in that, Secure isolation is carried out in the higher-pressure region formed in module and low-pressure area, and Secure isolation spacing is greater than 1.5 millimeters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410625420.9A CN104410261A (en) | 2014-11-07 | 2014-11-07 | Aluminum nitride substrate based frequency limiting power module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410625420.9A CN104410261A (en) | 2014-11-07 | 2014-11-07 | Aluminum nitride substrate based frequency limiting power module |
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| CN104410261A true CN104410261A (en) | 2015-03-11 |
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| CN201410625420.9A Pending CN104410261A (en) | 2014-11-07 | 2014-11-07 | Aluminum nitride substrate based frequency limiting power module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106960843A (en) * | 2017-04-10 | 2017-07-18 | 北方电子研究院安徽有限公司 | A kind of domain structure of the high-power mixing integrated circuit of space flight |
| CN109256337A (en) * | 2018-08-17 | 2019-01-22 | 北方电子研究院安徽有限公司 | A kind of perimeter grade element eutectic welder and welding method |
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| CN201674395U (en) * | 2010-05-10 | 2010-12-15 | 中国石油集团钻井工程技术研究院 | Power supply for neutron generator |
| CN201830140U (en) * | 2010-10-22 | 2011-05-11 | 广州创维平面显示科技有限公司 | BOOST drive circuit, drive device and LED (light emitting diode) liquid crystal module |
| CN103107106A (en) * | 2012-12-12 | 2013-05-15 | 贵州振华风光半导体有限公司 | Batch productbility improvement method of multi-chip component homogeneous bonding system |
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2014
- 2014-11-07 CN CN201410625420.9A patent/CN104410261A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201674395U (en) * | 2010-05-10 | 2010-12-15 | 中国石油集团钻井工程技术研究院 | Power supply for neutron generator |
| CN201830140U (en) * | 2010-10-22 | 2011-05-11 | 广州创维平面显示科技有限公司 | BOOST drive circuit, drive device and LED (light emitting diode) liquid crystal module |
| CN103107106A (en) * | 2012-12-12 | 2013-05-15 | 贵州振华风光半导体有限公司 | Batch productbility improvement method of multi-chip component homogeneous bonding system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106960843A (en) * | 2017-04-10 | 2017-07-18 | 北方电子研究院安徽有限公司 | A kind of domain structure of the high-power mixing integrated circuit of space flight |
| CN109256337A (en) * | 2018-08-17 | 2019-01-22 | 北方电子研究院安徽有限公司 | A kind of perimeter grade element eutectic welder and welding method |
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Application publication date: 20150311 |