CN106253644A - Low-voltage, high-current Mosfet power model - Google Patents
Low-voltage, high-current Mosfet power model Download PDFInfo
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- CN106253644A CN106253644A CN201610798262.6A CN201610798262A CN106253644A CN 106253644 A CN106253644 A CN 106253644A CN 201610798262 A CN201610798262 A CN 201610798262A CN 106253644 A CN106253644 A CN 106253644A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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Abstract
The invention discloses low-voltage, high-current Mosfet power model, including full copper heat dissipating substrate, ceramic wafer, driving protection circuit plate and Mosfet chip, Mosfet chip is in parallel two-by-two forms Mosfet chip array；Described driving protection circuit plate and ceramic wafer are each attached on full copper heat dissipating substrate; described Mosfet chip array is fixed on ceramic wafer; and the drain electrode of each Mosfet chip is all welded with ceramic wafer in Mosfet chip, the grid of each Mosfet chip and source electrode are all connected with driving protection circuit plate；Described driving protection circuit plate is for exporting positive back-pressure driving signal to Mosfet chip array according to from outside make-and-break signal.The present invention utilizes full copper heat dissipating substrate to combine the problem that ceramic wafer efficiently solves heat radiation difficulty, it is provided that large-area current channel, multiple Mosfet chips simultaneously drive so that the electric current passed through can be more than 3000A.
Description
Technical field
The present invention relates to low-voltage, high-current energy conversion technique field, particularly relate to low-voltage, high-current Mosfet power mould
Block.
Background technology
In current industrial low-voltage, high-current output rectifier application, for exporting distillation, the device of output commutation
Commonly use is several power devices such as Schottky diode, fast recovery diode, controllable silicon.These devices are all pressure drop
Property device, electric current flows through this device and then produces fixing pressure drop, and pressure drop size just determines the power consumption size of this device.Enter at present
The pressure drop of the high-power Schottky diode of low pressure drop of mouth is generally between 0.65V-0.75V.If by 3000A electric current, then existing
The thermal power that commutation diode part can produce is 0.75 × 3000A=2250W, the electricity of large losses in high-power applications
Can, and need high heat radiation expense.
In existing Mosfet module, generally can for a long time band carry electric current at below 300A.And without driving
Circuit, and internal protection circuitry.When big electric current uses, need to carry out many used in parallel.Current application exists all
Staying control difficulty, drive circuit is complicated, and device protection cost is high, heat radiation structure design difficulty, and the problem such as take up room big.
Summary of the invention
In order to overcome the deficiencies in the prior art, it is an object of the invention to provide low-voltage, high-current Mosfet power model,
Its simple in construction, possesses good radiating effect, improves the efficiency of high frequency switch power.
The purpose of the present invention realizes by the following technical solutions:
Low-voltage, high-current Mosfet power model, if including full copper heat dissipating substrate, ceramic wafer, driving protection circuit plate and
Dry Mosfet chip, several Mosfet chips are connected in parallel formation Mosfet chip array two-by-two；Described driving protective wire
Road plate and ceramic wafer are each attached on full copper heat dissipating substrate, and described Mosfet chip array is fixed on ceramic wafer, and Mosfet
In chip, the drain electrode of each Mosfet chip is all welded with ceramic wafer, the grid of each Mosfet chip and source electrode all with drive
Dynamic protection circuit plate connects；Described driving protection circuit plate is for exporting positive back-pressure driving letter according to from outside make-and-break signal
Number to Mosfet chip array, to control the break-make of Mosfet chip array.
Preferably, also including that shell, described shell include leg and top cover, leg is fixed on full copper heat dissipating substrate, top
Lid is connected to the edge, top of leg, and top cover is connected with leg and describes and accommodate space, described ceramic wafer, driving protection circuit plate and
Mosfet chip array is respectively positioned in this receiving space.
Preferably, described driving protection circuit plate is provided with positive/negative-pressure and produces circuit, isolated drive circuit and some numbers
Measure the raster data model protection circuit consistent with Mosfet chip, raster data model protection circuit and Mosfet chip one_to_one corresponding；Institute
Stating positive/negative-pressure and produce the source terminal of circuit connection Mosfet chip array, isolated drive circuit connects the grid of Mosfet chip array
Extremely, the gate terminal of Mosfet chip array and source terminal are all connected with raster data model protection circuit, and raster data model protection electricity
Road is also connected with the grid of the Mosfet chip of correspondence；Described positive back-pressure produces circuit for producing a fixed voltage to Mosfet core
The source terminal of chip arrays；Described isolated drive circuit is for exporting positive back-pressure driving signal extremely according to from outside make-and-break signal
Mosfet chip array, to control the break-make of Mosfet chip array.
Preferably, described positive/negative-pressure generation circuit includes electric capacity C1 to electric capacity C7, diode D1, resistance R1 and resistance R2；
The negative pole of one end of electric capacity C1, one end of resistance R1 and diode D1 all source terminals with Mosfet chip array are connected；Electric capacity
The other end of C1, the other end of resistance R1, one end of resistance R2, one end of electric capacity C2, one end of electric capacity C3, one end of electric capacity C4
All electrically connect with a direct current；One end of the other end of resistance R2, one end of electric capacity C5, one end of electric capacity C6 and electric capacity C7 is all with electric
One end of resistance R1 connects；The other end of electric capacity C2, the other end of electric capacity C3, the other end of electric capacity C4, the other end of electric capacity C5, electricity
Hold the other end of C6, the other end of electric capacity C7 and the equal ground connection of positive pole of diode D1.
Preferably, described isolated drive circuit includes that opto-coupler chip U1, diode D2, diode D3, resistance R3 are to resistance
R5, audion Q1 and audion Q2；The positive pole of described diode D2 connects external input signal positive terminal, the positive pole of diode D3
Connecting external input signal negative pole end, the negative pole of diode D2 connects the negative pole of diode D3 by resistance R3, diode D3's
One end of negative pole and resistance R4 is all connected with the input positive pole of opto-coupler chip U1, the positive pole of diode D3 and the other end of resistance R4
All it is connected with the input negative pole of opto-coupler chip U1；The base stage of audion Q1 and the base stage of audion Q2 all connect light by resistance R5
The outfan of coupling chip U1, the emitter stage of audion Q1 and the emitter stage of audion Q2 are all connected with the grid of Mosfet chip array
End；The feeder ear of opto-coupler chip U1 and the colelctor electrode of audion Q1 are all connected with a unidirectional current；The ground end of opto-coupler chip U1 and three poles
The equal ground connection of colelctor electrode of pipe Q2.
Preferably, described raster data model protection circuit includes resistance R6, resistance R7, diode D4 and transient diode D5,
The negative pole of diode D4 and one end of resistance R6 all gate terminal with Mosfet chip array are connected, the positive pole of diode D4 and electricity
The other end of resistance R6 connects one end of resistance R7, and the other end of resistance R7 connects the source terminal of Mosfet chip array, resistance R7
One end be also connected with the grid of Mosfet chip corresponding to this raster data model protection circuit；Described transient diode D5 is connected in parallel on electricity
The two ends of resistance R7.
Preferably, driving and be additionally provided with temperature protection observation circuit on protection circuit plate, this temperature protection observation circuit includes
Electric capacity C8, optocoupler U2, resistance R8 form series connection to resistance R11 and voltage stabilizing audion U3, described resistance R8 and resistance R9 series connection
Road, the one end on the road of this series connection and one end of resistance R10 connect a unidirectional current, one end of electric capacity C8 and the ginseng of voltage stabilizing audion U3
Examine end to be both connected between resistance R8 and resistance R9, the road of the other end of electric capacity C8, the anode of voltage stabilizing audion U3 and series connection
The equal ground connection of the other end；The other end of resistance R10 connects the negative electrode of voltage stabilizing audion U3 by resistance R11, and the input of optocoupler U2 is born
Pole connects the negative electrode of voltage stabilizing audion U3, and the input positive pole of optocoupler U2 is connected between resistance R10 and resistance R11；Optocoupler U2's
Emitter stage connects external input signal negative pole end, and the colelctor electrode of optocoupler U2 connects an external circuit.
Preferably, the model of described voltage stabilizing audion U3 is TL431.
Compared to existing technology, the beneficial effects of the present invention is:
The present invention utilizes full copper heat dissipating substrate to combine the problem that ceramic wafer efficiently solves heat radiation difficulty, it is provided that large-area
Current channel, multiple Mosfet chips simultaneously drive so that the electric current passed through can be more than 3000A.
Accompanying drawing explanation
Fig. 1 is the structure chart of the low-voltage, high-current Mosfet power model of the present invention.
Fig. 2 is the circuit structure diagram of the positive/negative-pressure generation circuit of the present invention.
Fig. 3 is the circuit structure diagram of the isolated drive circuit of the present invention.
Fig. 4 is the circuit structure diagram of the raster data model protection circuit of the present invention.
Fig. 5 is the circuit structure diagram of the temperature protection observation circuit of the present invention.
Wherein, 1, full copper heat dissipating substrate；2, ceramic wafer；3, protection circuit plate is driven；4, Mos chip array；5, shell；
51, leg；52, top cover.
Detailed description of the invention
Below, in conjunction with accompanying drawing and detailed description of the invention, the present invention is described further:
Seeing Fig. 1, the present invention provides low-voltage, high-current Mosfet power model, including full copper heat dissipating substrate 1, ceramic wafer 2,
Driving protection circuit plate 3 and several Mosfet chips, several Mosfet chips are connected in parallel formation Mosfet core two-by-two
Chip arrays 4.Driving protection circuit plate 3 and ceramic wafer 2 to be each attached on full copper heat dissipating substrate 1, Mosfet chip array 4 is fixed on
On ceramic wafer 2, and in Mosfet chip array 4, the drain electrode of each Mosfet chip is all welded with ceramic wafer 2, each
The grid of Mosfet chip and source electrode are all connected with driving protection circuit plate 3；Described driving protection circuit plate 3 for according to from
Outside make-and-break signal output positive back-pressure driving signal is to Mosfet chip array 4, to control the logical of Mosfet chip array 4
Disconnected.
Ceramic wafer 2 is alumina ceramic plate, and full copper heat dissipating substrate 1 is that the structure as whole power model supports, and carries
For large-area current channel and heat sinking function.Ceramic wafer 2 is for providing one layer between Mosfet chip and full copper heat dissipating substrate 1
The transition passage of insulation low thermal resistance, and provide one end low-impedance conductive channel.Mosfet chip array 4 is the core in the present invention
Heart parts, by the encapsulation in parallel of multiple Mosfet chips, such as first Mosfet chip and second Mosfet chip are also
Connection, the grid of the grid of first Mosfet chip and second Mosfet chip connects, the source electrode of first Mosfet chip
Being connected with the source electrode of second Mosfet chip, the drain electrode of the two Mosfet chip is all connected to ceramic wafer.Same, if
3rd Mosfet chip and second Mosfet chip are in parallel, the grid of the 3rd Mosfet chip and second Mosfet core
The grid of sheet connects, and the source electrode of the 3rd Mosfet chip and the source electrode of second Mosfet chip connect, by that analogy, it is achieved
The Mosfet conductive channel of big electric current.Protection circuit plate 3 is driven to have multiple circuit.Its for Mosfet chip array 4 provide every
Signal is driven, it is also possible to provide temperature protection fault feedback from positive back-pressure.
Being coated with insulation fill stratum on Mosfet chip array 4, insulation fill stratum is macromolecule silica gel material, it is possible to for
Internal components provides insulation, the running environment of low thermal resistance.
The present invention can also arrange a shell 5, and shell includes leg 51 and top cover 52, and leg 51 is fixed on the heat radiation of full copper
In substrate 1, top cover 52 is connected to the edge, top of leg 41, top cover 42 be connected with leg 41 describe receiving space, described ceramic wafer 2,
Protection circuit plate 3 and Mosfet chip array 4 is driven to be respectively positioned in this receiving space.Shell 5 realizes the overall package of outward appearance.
Inside modules uses welding procedure each device solder bond together, according to the heat transfer road of Mosfet chip
Footpath, by ceramic wafer, full copper heat dissipating substrate is provided the heat dissipation path of a low thermal resistance for template internal heat, is let go by this,
The heat that Mosfet chip produces finally can be transferred on the radiator of external connection through ceramic wafer and full copper heat dissipating substrate.
Seeing Fig. 2 to Fig. 5, the driving protection circuit plate of the present invention is provided with positive/negative-pressure and produces circuit, isolated drive circuit
The raster data model protection circuit consistent with Mosfet chip with several quantity, raster data model protection circuit and Mosfet chip one
One is corresponding；Positive/negative-pressure produces circuit and connects the source terminal of Mosfet chip array, and isolated drive circuit connects Mosfet chip battle array
The gate terminal of row, the gate terminal of Mosfet chip array and source terminal are all connected with raster data model protection circuit, and raster data model
Protection circuit is also connected with the grid of the Mosfet chip of correspondence.Realizing Mosfet chip array is controlled break-make is isolation drive
Circuit, it can accept the make-and-break signal of outside, produce positive back-pressure and drive signal to Mosfet chip array.
Positive/negative-pressure produces circuit and includes electric capacity C1 to electric capacity C7, diode D1, resistance R1 and resistance R2；The one of electric capacity C1
End, negative pole all source terminals DrvS with Mosfet chip array of one end of resistance R1 and diode D1 are connected；Electric capacity C1's is another
One end, the other end of resistance R1, one end of resistance R2, one end of electric capacity C2, one end of electric capacity C3, electric capacity C4 one end all with one
Unidirectional current VCC connects；One end of the other end of resistance R2, one end of electric capacity C5, one end of electric capacity C6 and electric capacity C7 is all and resistance
One end of R1 connects；The other end of electric capacity C2, the other end of electric capacity C3, the other end of electric capacity C4, the other end of electric capacity C5, electric capacity
The equal ground connection of positive pole of the other end of C6, the other end of electric capacity C7 and diode D1.
Diode D1, resistance R1, resistance R2, electric capacity C5, electric capacity C6 and electric capacity C7 composition form voltage stabilizing and accumulator, for
The voltage of input provides a stable bias potential, and this current potential is then as the fixed level of Mosfet chip source electrode.With this
Fixed level is as datum, and the positive side of channel input power is positive voltage, and channel input power minus side is negative voltage.
Isolated drive circuit includes that opto-coupler chip U1, diode D2, diode D3, resistance R3 are to resistance R5, audion Q1
With audion Q2；The positive pole of described diode D2 connects outside the positive pole connection of external input signal positive terminal Drv+, diode D3
Portion's negative input signal poles D rv-, the negative pole of diode D2 connects the negative pole of diode D3 by resistance R3, and diode D3's is negative
One end of pole and resistance R4 is all connected with the input positive pole of opto-coupler chip U1, and the positive pole of diode D3 and the other end of resistance R4 are equal
It is connected with the input negative pole of opto-coupler chip U1；The base stage of audion Q1 and the base stage of audion Q2 all connect optocoupler by resistance R5
The emitter stage of the outfan out of chip U1, audion Q1 and the emitter stage of audion Q2 are all connected with the grid of Mosfet chip array
Poles D rvG；The colelctor electrode of the feeder ear vin and audion Q1 of opto-coupler chip U1 is all connected with a unidirectional current；The ground of opto-coupler chip U1
The equal ground connection of colelctor electrode of end gnd and audion Q2.
Opto-coupler chip U1, audion Q1 and the push-pull circuit of audion Q2 composition, form the drive circuit of band isolation, work as light
When the input of coupling chip U1 has high level signal, then have the driving voltage of positive voltage on the grid of Mosfet chip so that it is
Conducting；When the input of opto-coupler chip U1 does not has signal to input, then have the driving of negative voltage on the grid of Mosfet chip
Voltage so that it is reliably close.
Raster data model protection circuit includes resistance R6, resistance R7, diode D4 and transient diode D5, and diode D4's is negative
One end of pole and resistance R6 all gate terminal DrvG with Mosfet chip array are connected, and the positive pole of diode D4 and resistance R6's is another
One end connects one end of resistance R7, and the other end of resistance R7 connects source terminal DrvS of Mosfet chip array, the one of resistance R7
End is also connected with the grid MosG of Mosfet chip corresponding to this raster data model protection circuit；Transient diode D5 is connected in parallel on resistance R7
Two ends.
The quantity of raster data model protection circuit is consistent with the quantity of Mosfet chip, and the quantity of Mosfet chip of the present invention is excellent
Electing 14 as, can form two Mosfet chip arrays, a Mosfet chip array includes 7 Mosfet chips.Thus
Raster data model protection circuit also corresponds to 14, the raster data model protection circuit of corresponding first Mosfet chip, then its resistance
One end of R7 connects the grid of this Mosfet chip, the like.And the connection Mosfet chip array that remaining place is mentioned
Gate terminal, source terminal, expression is the overall grid after several Mosfet chip parallel connections and source electrode.
Raster data model protection circuit uses transient diode D5 to carry out the overvoltage protection of grid, and diode D4 is as when turning off
Repid discharge passage.
The driving protection circuit plate of the present invention also can be provided with temperature protection observation circuit, and this temperature protection observation circuit includes
Electric capacity C8, optocoupler U2, resistance R8 form series connection to resistance R11 and voltage stabilizing audion U3, described resistance R8 and resistance R9 series connection
Road, the one end on the road of this series connection and one end of resistance R10 connect a unidirectional current VCC, one end of electric capacity C8 and voltage stabilizing audion U3
Reference edge be both connected between resistance R8 and resistance R9, the other end of electric capacity C8, the anode of voltage stabilizing audion U3 and connect it
The equal ground connection of the other end on road；The other end of resistance R10 connects the negative electrode of voltage stabilizing audion U3 by resistance R11, and optocoupler U2's is defeated
Entering the negative electrode that negative pole connects voltage stabilizing audion U3, the input positive pole of optocoupler U2 is connected between resistance R10 and resistance R11；Optocoupler
The emitter stage of U2 connects external input signal negative pole end Drv-, and the colelctor electrode of optocoupler U2 connects an external circuit TP.
Snowslide resistance R11 and voltage stabilizing audion U3 forms excess temperature supervisory circuit, when the resistance R11 being arranged on inside modules reaches
To when triggering temperature, the internal resistance of resistance R11 can increase rapidly, thus voltage stabilizing audion U3 can be passed excess temperature signal by optocoupler U2
Deliver to external circuit, make external circuit know circuit temperature situation, and close the driving voltage of Mosfet.
In the design of the present invention, internal resistance is only 0.039mOhm.The most identical by the thermal power in the case of 3000A electric current
For: 3000A*3000A*0.039mOhm=975W, present design saves the heat of 72% in this transform part than existing design
Loss.Using Integration Design, monomer capacity is up to 3000A.Can be current new forms of energy industry, and industrial big electric current
Application provides reliable elemental device support.
For a control aspect in terms of Mosfet power model, owing to high-frequency switch power transformer outfan can not
Simultaneously turning on, therefore Mosfe power model controls to use pulsed conduction mode, interval, dead band to reach nS pole, take full advantage of
Mosfe power model opens function, improves the efficiency of high frequency switch power further.Secondly, the present invention uses full copper heat radiation base
The end and the radiating mode of ceramic wafer, make whole module itself possess radiating condition, thus it be big to solve caloric value, heat radiation difficulty
Problem.Inside uses multiple Mosfe chip to simultaneously drive simultaneously so that the electric current that each Mosfe core passes through more than 3000A,
Mosfe core uses welding procedure, reduces the pressure drop between connector.Make whole Mosfe core by pressure during 3000A electric current
Fall is about 110mV.Designed by modular structure so that in powerful Mosfet application, substantial amounts of peace can be saved simultaneously
It is filled with and follow-up maintenance workload.
It will be apparent to those skilled in the art that can technical scheme as described above and design, make other various
Corresponding change and deformation, and all these change and deformation all should belong to the protection domain of the claims in the present invention
Within.
Claims (8)
1. low-voltage, high-current Mosfet power model, it is characterised in that include full copper heat dissipating substrate, ceramic wafer, driving protective wire
Road plate and several Mosfet chips, several Mosfet chips are connected in parallel formation Mosfet chip array two-by-two；Described
Driving protection circuit plate and ceramic wafer to be each attached on full copper heat dissipating substrate, described Mosfet chip array is fixed on ceramic wafer
On, and in Mosfet chip, the drain electrode of each Mosfet chip is all welded with ceramic wafer, the grid of each Mosfet chip
All it is connected with driving protection circuit plate with source electrode；Described driving protection circuit plate is for according to from outside make-and-break signal output
Positive back-pressure driving signal is to Mosfet chip array, to control the break-make of Mosfet chip array.
2. low-voltage, high-current Mosfet power model as claimed in claim 1, it is characterised in that also include shell, described outside
Shell includes leg and top cover, and leg is fixed on full copper heat dissipating substrate, and top cover is connected to the edge, top of leg, and top cover is connected with leg
Describing receiving space, described ceramic wafer, driving protection circuit plate and Mosfet chip array are respectively positioned in this receiving space.
3. low-voltage, high-current Mosfet power model as claimed in claim 1, it is characterised in that described driving protection circuit plate
It is provided with the raster data model protection that positive/negative-pressure produces circuit, isolated drive circuit consistent with Mosfet chip with several quantity electric
Road, raster data model protection circuit and Mosfet chip one_to_one corresponding；Described positive/negative-pressure produces circuit and connects Mosfet chip array
Source terminal, isolated drive circuit connect Mosfet chip array gate terminal, the gate terminal of Mosfet chip array and source electrode
End is all connected with raster data model protection circuit, and raster data model protection circuit is also connected with the grid of corresponding Mosfet chip；Institute
State positive back-pressure and produce circuit for producing a fixed voltage to the source terminal of Mosfet chip array；Described isolated drive circuit is used
According to from outside make-and-break signal output positive back-pressure driving signal to Mosfet chip array, to control Mosfet chip battle array
The break-make of row.
4. low pressure point electric current Mosfet power model as claimed in claim 3, it is characterised in that described positive/negative-pressure produces circuit
Including electric capacity C1 to electric capacity C7, diode D1, resistance R1 and resistance R2；One end of electric capacity C1, one end of resistance R1 and diode
The negative pole of D1 all source terminals with Mosfet chip array are connected；The other end of electric capacity C1, the other end of resistance R1, resistance R2
One end, one end of electric capacity C2, one end of electric capacity C3, one end of electric capacity C4 all electrically connect with a direct current；The other end of resistance R2, electricity
Hold one end of C5, all one end with resistance R1, one end of one end of electric capacity C6 and electric capacity C7 are connected；The other end of electric capacity C2, electric capacity
The other end of C3, the other end of electric capacity C4, the other end of electric capacity C5, the other end of electric capacity C6, the other end of electric capacity C7 and two poles
The equal ground connection of positive pole of pipe D1.
5. low pressure point electric current Mosfet power model as claimed in claim 4, it is characterised in that described isolated drive circuit bag
Include opto-coupler chip U1, diode D2, diode D3, resistance R3 to resistance R5, audion Q1 and audion Q2；Described diode D2
Positive pole connect external input signal positive terminal, the positive pole of diode D3 connects external input signal negative pole end, diode D2's
Negative pole connects the negative pole of diode D3 by resistance R3, and the negative pole of diode D3 and one end of resistance R4 are all with opto-coupler chip U1's
Input positive pole connects, and the positive pole of diode D3 and the other end of resistance R4 are all connected with the input negative pole of opto-coupler chip U1；Three poles
The base stage of pipe Q1 and the base stage of audion Q2 all connect the outfan of opto-coupler chip U1, the emitter stage of audion Q1 by resistance R5
With the gate terminal that the emitter stage of audion Q2 is all connected with Mosfet chip array；The feeder ear of opto-coupler chip U1 and audion Q1's
Colelctor electrode is all connected with a unidirectional current；The ground end of opto-coupler chip U1 and the equal ground connection of colelctor electrode of audion Q2.
6. low pressure point electric current Mosfet power model as claimed in claim 5, it is characterised in that described raster data model protection electricity
Road includes resistance R6, resistance R7, diode D4 and transient diode D5, the negative pole of diode D4 and one end of resistance R6 all with
The gate terminal of Mosfet chip array connects, and the positive pole of diode D4 and the other end of resistance R6 connect one end of resistance R7, electricity
The other end of resistance R7 connects the source terminal of Mosfet chip array, and one end of resistance R7 is also connected with this raster data model protection circuit pair
The grid of the Mosfet chip answered；Described transient diode D5 is connected in parallel on the two ends of resistance R7.
7. low pressure point electric current Mosfet power model as claimed in claim 6, it is characterised in that drive and go back on protection circuit plate
Being provided with temperature protection observation circuit, this temperature protection observation circuit includes that electric capacity C8, optocoupler U2, resistance R8 are to resistance R11 and steady
Pressure audion U3, described resistance R8 and resistance R9 series connection forms the road of series connection, the one end on the road of this series connection and one end of resistance R10
Connecting a unidirectional current, one end of electric capacity C8 and the reference edge of voltage stabilizing audion U3 are both connected between resistance R8 and resistance R9, electricity
Hold the equal ground connection of the other end on the road of the other end of C8, the anode of voltage stabilizing audion U3 and series connection；The other end of resistance R10 is by electricity
Resistance R11 connects the negative electrode of voltage stabilizing audion U3, and the input negative pole of optocoupler U2 connects the negative electrode of voltage stabilizing audion U3, and optocoupler U2's is defeated
Enter positive pole to be connected between resistance R10 and resistance R11；The emitter stage of optocoupler U2 connects external input signal negative pole end, optocoupler U2
Colelctor electrode connect an external circuit.
8. low pressure point electric current Mosfet power model as claimed in claim 7, it is characterised in that described voltage stabilizing audion U3's
Model is TL431.
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| CN201610798262.6A CN106253644A (en) | 2016-08-31 | 2016-08-31 | Low-voltage, high-current Mosfet power model |
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| CN106602968A (en) * | 2017-01-05 | 2017-04-26 | 四川埃姆克伺服科技有限公司 | Servo motor driving unit structure |
| CN106920793A (en) * | 2017-03-27 | 2017-07-04 | 广东美的制冷设备有限公司 | The preparation method and electrical equipment of SPM, SPM |
| CN111446758A (en) * | 2020-04-09 | 2020-07-24 | 深圳市景方盈科技有限公司 | New energy battery management system and electric automobile |
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| CN203193501U (en) * | 2013-04-03 | 2013-09-11 | 西安西驰电子传动与控制有限公司 | Upper-lower half-bridge driving interlocking device of DC brushless motor driver |
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| CN206164351U (en) * | 2016-08-31 | 2017-05-10 | 广州市泰霖电源设备有限公司 | Low voltage and high current mosfet power module |
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| JP2004072942A (en) * | 2002-08-08 | 2004-03-04 | Mitsubishi Electric Corp | Power device drive circuit |
| CN201163755Y (en) * | 2008-01-31 | 2008-12-10 | 徐小康 | High power MOSFET driving module |
| CN102064158A (en) * | 2010-11-04 | 2011-05-18 | 嘉兴斯达微电子有限公司 | Compact power module |
| CN202488340U (en) * | 2011-12-31 | 2012-10-10 | 意法半导体研发（上海）有限公司 | Cascode driving circuit |
| CN103532357A (en) * | 2012-07-04 | 2014-01-22 | 北京精密机电控制设备研究所 | MOSFET-based power driving circuit |
| CN203193501U (en) * | 2013-04-03 | 2013-09-11 | 西安西驰电子传动与控制有限公司 | Upper-lower half-bridge driving interlocking device of DC brushless motor driver |
| CN206164351U (en) * | 2016-08-31 | 2017-05-10 | 广州市泰霖电源设备有限公司 | Low voltage and high current mosfet power module |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106602968A (en) * | 2017-01-05 | 2017-04-26 | 四川埃姆克伺服科技有限公司 | Servo motor driving unit structure |
| CN106602968B (en) * | 2017-01-05 | 2023-07-25 | 四川埃姆克伺服科技有限公司 | Servo motor driving unit structure |
| CN106920793A (en) * | 2017-03-27 | 2017-07-04 | 广东美的制冷设备有限公司 | The preparation method and electrical equipment of SPM, SPM |
| CN106920793B (en) * | 2017-03-27 | 2020-04-17 | 广东美的制冷设备有限公司 | Intelligent power module, preparation method of intelligent power module and electric equipment |
| CN111446758A (en) * | 2020-04-09 | 2020-07-24 | 深圳市景方盈科技有限公司 | New energy battery management system and electric automobile |
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