CN203193501U - Upper-lower half-bridge driving interlocking device of DC brushless motor driver - Google Patents
Upper-lower half-bridge driving interlocking device of DC brushless motor driver Download PDFInfo
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- CN203193501U CN203193501U CN 201320163004 CN201320163004U CN203193501U CN 203193501 U CN203193501 U CN 203193501U CN 201320163004 CN201320163004 CN 201320163004 CN 201320163004 U CN201320163004 U CN 201320163004U CN 203193501 U CN203193501 U CN 203193501U
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Abstract
The utility model relates to an upper-lower half-bridge driving interlocking device of a DC brushless motor driver comprising an upper half-bridge driving circuit and a lower half-bridge driving circuit of the DC brushless motor driver. The interlocking device is characterized in that an upper half-bridge tube of the upper half-bridge driving circuit is electrically connected with an output control end of an upper half-bridge driving interlocking circuit, and a lower half-bridge tube source of the lower half-bridge driving circuit is electrically connected with a control end of the lower half-bridge driving interlocking circuit; an input end of the upper half-bridge driving interlocking circuit is electrically connected with an input negative end Ad of a first optoelectronic coupler of the lower half-bridge driving circuit; an input end of the lower half-bridge driving interlocking circuit is electrically connected with an input negative end Au of a second optoelectronic coupler of the upper half-bridge driving circuit. By adopting the above mentioned technical scheme, the upper half-bridge tube and the lower half-bridge tube cannot be conducted at the same time, the power tube damage caused by the short circuit current can be prevented, the controller cannot be damaged, and then the normal working of the controller can be guaranteed.
Description
Technical field
The utility model belongs to the interlock of half-bridge driven up and down of driver for brushless DC motor device, particularly a kind of driver for brushless DC motor.
Background technology
Existing is the driver for brushless DC motor that power component is formed with the MOSFET pipe, its major loop is as shown in Figure 1: the driver for brushless DC motor major loop is made up of 6 MOSFET pipes, 6 MOSFET pipes are formed 3 half-bridges, being respectively A goes up under the A, under the last B of B, under the last C of C, be A phase half-bridge under the last A of A wherein, being B phase half-bridge under the last B of B, is C phase half-bridge under the last C of C.A is last, B is last, be respectively the last half-bridge of ABC three-phase on the C, under the A, under the B, be respectively the following half-bridge of ABC three-phase under the C.Driver for brushless DC motor is according to 6 position signallings of motor rotor position sensor, make one of different half-bridges to go up pipe and a pipe conducting down, make the motor rotation, the conducting of half-bridge up and down of its 6 rotor-position sensor signal correspondences is in proper order: under the last B of A, under the last C of A, under the last C of B, under the last A of B, under the last A of C, under the last B of C, circulation is rotated motor continuously successively.Know two conductings simultaneously of MOSFET pipe up and down of same half-bridge in proper order from the conducting of half-bridge up and down.
The dc brushless motor speed governing, be to realize by the voltage that adjusting is added on the motor winding, be added in the duty ratio of the pulse-width signal PWM on the half-bridge MOSFET pipe by change, change the voltage that is added on the motor winding, following half-bridge MOSFET pipe is kept conducting and is realized regulating motor speed.
Same half-bridge up and down two MOSFET to drive circuit as shown in Figure 1: MOSFET to three ends be grid respectively, indicate with alphabetical G, source electrode with alphabetical D sign, drains, with alphabetical S sign.Owing to exist parasitic capacitance between the GDS of MOSFET, also be junction capacitance and lead-in inductance.Because the existence of junction capacitance and inductance is arranged, when the DS of MOSFET distal process making alive, by junction capacitance the voltage of GS end is risen, even can make the conducting of MOSFET pipe, this is called the Miller effect.Be example with Fig. 2, when last half-bridge MOSFET pipe conducting, supply voltage is equivalent to be added to down suddenly on the DS end of half-bridge MOSFET pipe, and the junction capacitance of holding by DG end and GS is charged and made the rising of GS terminal voltage again.During half-bridge MOSFET pipe conducting instantly, be equivalent to S termination power negative of half-bridge MOSFET pipe, also be equivalent to impact voltage on the DS end of last half-bridge MOSFET pipe, the junction capacitance of holding by DG end and GS is charged and is made the rising of GS terminal voltage again.If the GS terminal voltage surpasses the minimum conducting voltage of MOSFET pipe, will make the conducting of MOSFET pipe, cause half-bridge MOSFET pipe conducting simultaneously up and down, also cry straight-through, be equivalent to power positive end by managing and the power supply negative terminal short circuit with brachium pontis MOSFET, short circuit current damages power tube, and then controller is damaged and can't work.
The Miller effect can't be eliminated, but can be by holding and connect electric capacity to GS, increase resistance Rg1 and Rg2 and reduce the influence of the Miller effect, but handle like this, the turn-on and turn-off time of MOSFET pipe is lengthened, increased the switching loss of MOSFET pipe, during operation, the temperature rise meeting increases, and also needs bigger radiator, not only increase cost, can't eliminate the straight-through risk of the MOSFET of half-bridge up and down pipe of same half-bridge fully.
Existing is the driver for brushless DC motor that power component is formed with the IGBT pipe, its major loop is as shown in Figure 3: the driver for brushless DC motor major loop is made up of 6 IGBT, 6 IGBT form 3 half-bridges, being respectively A goes up under the A, under the last B of B, under the last C of C, be A phase half-bridge under the last A of A wherein, being B phase half-bridge under the last B of B, is C phase half-bridge under the last C of C.A is last, B is last, be respectively the last half-bridge of ABC three-phase on the C, under the A, under the B, be respectively the following half-bridge of ABC three-phase under the C.Driver for brushless DC motor is according to 6 position signallings of motor rotor position sensor, make one of different half-bridges to go up pipe and a pipe conducting down, make the motor rotation, the conducting of half-bridge up and down of its 6 rotor-position sensor signal correspondences is in proper order: under the last B of A, under the last C of A, under the last C of B, under the last A of B, under the last A of C, under the last B of C, circulation is rotated motor continuously successively.Know two conductings simultaneously of IGBT up and down of same half-bridge in proper order from the conducting of half-bridge up and down.
The dc brushless motor speed governing, be to realize by the voltage that adjusting is added on the motor winding, be added in the duty ratio of the pulse-width signal PWM on the half-bridge IGBT by change, change the voltage that is added on the motor winding, following half-bridge IGBT keeps conducting and realizes regulating motor speed.
The drive circuit of two IGBT as shown in Figure 4 about the same half-bridge: three ends of IGBT are grid respectively, indicate with alphabetical G, and emitter indicates with letter e, and collector electrode indicates with letter C.Owing to exist electric capacity between the GCE of IGBT, also be junction capacitance and lead-in inductance.Because the existence of junction capacitance and inductance is arranged, when the CE of IGBT distal process making alive, by junction capacitance the voltage of GE end is risen, even can make the IGBT conducting, this phenomenon is the Miller effect.Be example with figure two, when last half-bridge IGBT conducting, supply voltage is equivalent to be added to down suddenly on the CE end of half-bridge IGBT, and the junction capacitance charging by CG end and GE end makes the rising of GE terminal voltage again.During half-bridge IGBT conducting instantly, be equivalent to E termination power negative of half-bridge IGBT, also be equivalent to impact voltage on the CE end of last half-bridge IGBT pipe, the junction capacitance of holding by CG end and GE is charged and is made the rising of GE terminal voltage again.If the GE terminal voltage surpasses the minimum conducting voltage of IBGT, will make the IGBT conducting, cause half-bridge IGBT conducting simultaneously up and down, also cry straight-through, be equivalent to power positive end by with brachium pontis IGBT and power supply negative terminal short circuit, short circuit current damages power tube, and then makes the controller damage and can't work.
The Miller effect can't be eliminated, but can be by holding and connect electric capacity to GE, increase resistance Rg1 and Rg2 and reduce the influence of the Miller effect, but handle like this, the turn-on and turn-off time of IGBT is lengthened, increased the switching loss of IGBT, during operation, the temperature rise meeting increases, and also needs bigger radiator, not only increase cost, can't eliminate the straight-through risk of the IGBT of half-bridge up and down of same half-bridge fully.
Since the Miller effect can't be eliminated, do not want to increase the switching loss of IGBT again, again because the not conducting simultaneously of the half-bridge up and down of DC brushless motor controller, by the method for half-bridge driven interlocking up and down, in the time of just realizing the half-bridge conducting, following half-bridge reliable turn-off is during following half-bridge conducting, last half-bridge reliable turn-off has thoroughly been eliminated the possibility of half-bridge conducting simultaneously up and down.
The utility model content
The purpose of this utility model provides a kind of up and down half-bridge pipe conducting simultaneously that can not cause, and produces short circuit current power tube is damaged, and then controller is damaged and the interlock of half-bridge driven up and down of a kind of driver for brushless DC motor that can't work.
The purpose of this utility model is to realize like this, a kind of interlock of half-bridge driven up and down of driver for brushless DC motor, at least the last half-bridge drive circuit that comprises driver for brushless DC motor, following half-bridge drive circuit, it is characterized in that: first bridge tube of going up in the half-bridge drive circuit is electrically connected with the output control terminal of last half-bridge driven interlock circuit, second bridge tube source electrode in the following half-bridge drive circuit is electrically connected with following half-bridge driven interlock circuit output control terminal, last half-bridge driven interlock circuit input is electrically connected with first photoelectrical coupler input negative terminal Ad of following half-bridge drive circuit, and following half-bridge driven interlock circuit input is electrically connected with second photoelectrical coupler input negative terminal Au of last half-bridge drive circuit.
Described first bridge tube of going up in the half-bridge drive circuit is the MOSFET pipe, be electrically connected with the output control terminal of last half-bridge driven interlock circuit between MOSFET pipe source S and the grid G, second bridge tube in the described half-bridge drive circuit down is the MOSFET pipe, is electrically connected with following half-bridge driven interlock circuit output control terminal between the MOSFET pipe source S in the following half-bridge drive circuit and the grid G.
Described half-bridge driven interlock circuit down comprises the 4th photoelectrical coupler 0b, triode Nb, resistance R 3, resistance R 4, triode Nb collector and emitter be output with following half-bridge drive circuit in MOSFET pipe source S and grid G between be electrically connected, the base stage of triode Nb is electrically connected with the phototriode pipe collector of the 4th photoelectrical coupler 0b by resistance R 3, the phototriode emitter of the 4th photoelectrical coupler 0b is electrically connected with the emitter of triode Nb, and the light-emitting diode anode of the 4th photoelectrical coupler 0b is electrically connected with the first photoelectrical coupler input Aa by resistance R 4.
The described half-bridge driven interlock circuit of going up comprises the 3rd photoelectrical coupler 0a, triode Na, resistance R 1, resistance R 2, triode Na collector and emitter is output, be electrically connected between MOSFET pipe source S in output and the last half-bridge drive circuit and the grid G, the base stage of triode Na is electrically connected with the phototriode pipe collector of the 3rd photoelectrical coupler 0a by resistance R 1, the phototriode emitter of the 3rd photoelectrical coupler 0a is electrically connected with the emitter of triode Na, and the light-emitting diode anode of the 3rd photoelectrical coupler 0a is electrically connected with second photoelectrical coupler input negative terminal Ad by resistance R 2.
Described the 3rd photoelectrical coupler 0a is relay.
Described the 4th photoelectrical coupler 0b is relay.
Described first bridge tube of going up in the half-bridge drive circuit is the IGBT pipe, be electrically connected with the output control terminal of last half-bridge driven interlock circuit between IGBT pipe emitter e and the base stage b, second bridge tube in the following half-bridge drive circuit is the IGBT pipe, is electrically connected with following half-bridge driven interlock circuit output control terminal between IGBT pipe emitter e and the base stage b.
Described half-bridge driven interlock circuit down comprises the 4th photoelectrical coupler 0b, triode Nb, resistance R 3, resistance R 4 and diode Db, IGBT pipe base stage b in triode Nb collector electrode and the following half-bridge drive circuit is electrically connected, triode Nb collector electrode is managed emitter e by the IGBT in diode Db and the following half-bridge drive circuit and is electrically connected, the base stage of triode Nb is electrically connected with the phototriode pipe collector of the 4th photoelectrical coupler 0b by resistance R 3, the phototriode emitter of the 4th photoelectrical coupler 0b is electrically connected with the collector electrode of triode Nb, and the light-emitting diode anode of the 4th photoelectrical coupler 0b is electrically connected with first photoelectrical coupler (7) input Au by resistance R 4.
The described half-bridge driven interlock circuit of going up comprises the 3rd photoelectrical coupler 0a, triode Na, resistance R 1, resistance R 2 and diode Da, triode Na collector and emitter is output, IGBT pipe base stage b in triode Na emitter and the last half-bridge drive circuit is electrically connected, and the emitter e that triode Na collector electrode passes through the IGBT pipe in diode Da and the last half-bridge drive circuit is electrically connected; The base stage of triode Na is electrically connected with the phototriode pipe collector of the 3rd photoelectrical coupler 0a by resistance R 1, the phototriode emitter of the 3rd photoelectrical coupler 0a is electrically connected with the collector electrode of triode Na, and the light-emitting diode anode of the 3rd photoelectrical coupler 0a is electrically connected with second photoelectrical coupler input negative terminal Ad by resistance R 2.
The utility model has the advantages that: whatsoever reason causes the control terminal voltage of first bridge tube or second bridge tube to rise, triode Na or triode Nb all the control terminal voltage of first bridge tube or second bridge tube be limited in triode conduction voltage drop in.When having guaranteed second bridge tube conducting, first bridge tube reliable turn-off reaches the purpose of half-bridge driven interlocking up and down.
Description of drawings
The utility model is described in further detail below in conjunction with the embodiment accompanying drawing:
Fig. 1 is the driver for brushless DC motor main circuit that existing MOSFET pipe is formed;
Fig. 2 is existing half-bridge MOSFET drive circuit;
Fig. 3 is the driver for brushless DC motor main circuit that existing IGBT pipe is formed;
Fig. 4 is existing half-bridge IGBT drive circuit;
Fig. 5 is the utility model embodiment 1 circuit theory diagrams;
Fig. 6 is the utility model embodiment 2 circuit theory diagrams;
Fig. 7 is the utility model embodiment 3 circuit theory diagrams;
Fig. 8 is the utility model embodiment 4 circuit theory diagrams.
Among the figure, 1, go up half-bridge drive circuit; 2, following half-bridge drive circuit; 3, first bridge tube; 4, second bridge tube; 5, go up the half-bridge driven interlock circuit; 6, following half-bridge driven interlock circuit; 7, first photoelectrical coupler; 8, second photoelectrical coupler.
Embodiment
As shown in Figure 5, Fig. 5 is half-bridge driven interlock circuit about half-bridge driven and the light-coupled isolation, at least comprise half-bridge drive circuit 1, following half-bridge drive circuit 2, it is characterized in that: first bridge tube 3(MOSFET in the last half-bridge drive circuit 1) be electrically connected with the output control terminal of last half-bridge driven interlock circuit 5 between source S and the grid G, second bridge tube 4(MOSFET in the following half-bridge drive circuit 2) is electrically connected with following half-bridge driven interlock circuit 6 output control terminals between source S and the grid G, last half-bridge driven interlock circuit 5 inputs are electrically connected with first photoelectrical coupler, the 7 input negative terminal Ad of following half-bridge drive circuit 2, and following half-bridge driven interlock circuit 6 inputs are electrically connected with second photoelectrical coupler, the 8 input negative terminal Au of last half-bridge drive circuit 1.
Described half-bridge driven interlock circuit 6 down comprises the 4th photoelectrical coupler 0b, triode Nb, resistance R 3, resistance R 4, triode Nb collector and emitter is output and second bridge tube 4(MOSFET) be electrically connected between source S and the grid G, the base stage of triode Nb is electrically connected with the phototriode pipe collector of the 4th photoelectrical coupler 0b by resistance R 3, the phototriode emitter of the 4th photoelectrical coupler 0b is electrically connected with the emitter of triode Nb, and the light-emitting diode anode of the 4th photoelectrical coupler 0b is electrically connected with first photoelectrical coupler, 7 input Aa by resistance R 4.
The described half-bridge driven interlock circuit 5 of going up comprises the 3rd photoelectrical coupler 0a, triode Na, resistance R 1, resistance R 2, triode Na collector and emitter is output, output and first bridge tube 3(MOSFET) be electrically connected between source S and the grid G, the base stage of triode Na is electrically connected with the phototriode pipe collector of the 3rd photoelectrical coupler 0a by resistance R 1, the phototriode emitter of the 3rd photoelectrical coupler 0a is electrically connected with the emitter of triode Na, and the light-emitting diode anode of the 3rd photoelectrical coupler 0a is electrically connected with second photoelectrical coupler, 8 input negative terminal Ad by resistance R 2.
As shown in Figure 6, Fig. 6 is that half-bridge driven and relay are isolated half-bridge driven interlock circuit up and down, the 3rd photoelectrical coupler 0a and the 4th photoelectrical coupler 0b or relay, relay OC and relay OD replace the 3rd photoelectrical coupler 0a and the 4th photoelectrical coupler 0b respectively.
During the utility model work, when making half-bridge MOSFET pipe Mu conducting, then input signal Au is high level, and Ad is low level.When Ad is low level, optocoupler or not conducting of relay Oa, not conducting of triode Na drives the state that interlock circuit does not influence the GS end of half-bridge MOSFET pipe Mu, and the signal of MOSFET pipe GS end depends on pulse-width signal PWM.Because Au is high level, then optocoupler or relay Ob conducting make triode Nb conducting.The conducting of Nb makes down the GS end short circuit of half-bridge MOSFET pipe Md, and whatsoever reason causes the GS terminal voltage to rise, triode Nb all the GS terminal voltage clamper of MOSFET pipe triode conduction voltage drop in.When having guaranteed that so last half-bridge MOSFET manages conducting, following half-bridge MOSFET pipe reliable turn-off.
When making down half-bridge MOSFET pipe Md conducting, then input signal Au is low level, and Ad is high level.When Au is low level, optocoupler or not conducting of relay Ob, not conducting of triode Nb, driving interlock circuit does not influence the state of the GS end of half-bridge MOSFET pipe Md down, and the signal of following half-bridge MOSFET pipe GS end depends on Ad.Because Ad is high level, then optocoupler or relay Oa conducting make triode Na conducting.The conducting of Na makes the GS end short circuit of half-bridge MOSFET pipe Mu, and whatsoever reason causes the GS terminal voltage to rise, triode Na all the GS terminal voltage clamper of MOSFET pipe triode conduction voltage drop in.When having guaranteed that like this time half-bridge MOSFET manages conducting, last half-bridge MOSFET pipe reliable turn-off reaches the purpose of half-bridge driven interlocking up and down.
As shown in Figure 7, Fig. 7 is the half-bridge driven that constitutes of IGBT pipe and light-coupled isolation half-bridge driven interlock circuit up and down, at least comprise half-bridge drive circuit 1, following half-bridge drive circuit 2, first bridge tube 3(IGBT in the last half-bridge drive circuit 1) is electrically connected with the output control terminal of last half-bridge driven interlock circuit 5 between emitter e and the base stage b, second bridge tube 4(IGBT in the following half-bridge drive circuit 2) is electrically connected with following half-bridge driven interlock circuit 6 output control terminals between emitter e and the base stage b, last half-bridge driven interlock circuit 5 inputs are electrically connected with first photoelectrical coupler, the 8 input negative terminal Ad of following half-bridge drive circuit 2, and following half-bridge driven interlock circuit 6 inputs are electrically connected with second photoelectrical coupler, the 7 input negative terminal Au of last half-bridge drive circuit 1.
Described half-bridge driven interlock circuit 6 down comprises the 4th photoelectrical coupler 0b, triode Nb, resistance R 3, resistance R 4 and diode Db, triode Nb collector electrode is electrically connected with second bridge tube 4 (IGBT) base stage b, triode Nb collector electrode is by diode Db and second bridge tube 4(IGBT) emitter e is electrically connected, the base stage of triode Nb is electrically connected with the phototriode pipe collector of the 4th photoelectrical coupler 0b by resistance R 3, the phototriode emitter of the 4th photoelectrical coupler 0b is electrically connected with the collector electrode of triode Nb, and the light-emitting diode anode of the 4th photoelectrical coupler 0b is electrically connected with first photoelectrical coupler, 7 input Au by resistance R 4.
The described half-bridge driven interlock circuit 5 of going up comprises the 3rd photoelectrical coupler 0a, triode Na, resistance R 1, resistance R 2 and diode Da, triode Na collector and emitter is output, triode Na emitter and first bridge tube 3(IGBT) base stage b is electrically connected, triode Na collector electrode is by diode Da and first bridge tube 3(IGBT) emitter e be electrically connected; The base stage of triode Na is electrically connected with the phototriode pipe collector of the 3rd photoelectrical coupler 0a by resistance R 1, the phototriode emitter of the 3rd photoelectrical coupler 0a is electrically connected with the collector electrode of triode Na, and the light-emitting diode anode of the 3rd photoelectrical coupler 0a is electrically connected with second photoelectrical coupler, 8 input negative terminal Ad by resistance R 2.
As shown in Figure 8, Fig. 8 is that half-bridge driven and relay are isolated half-bridge driven interlock circuit up and down, the 3rd photoelectrical coupler 0a and the 4th photoelectrical coupler 0b or relay, relay OC and relay OD replace the 3rd photoelectrical coupler 0a and the 4th photoelectrical coupler 0b respectively.
During the utility model work, when making half-bridge IGBT pipe Mu conducting, then input signal Au is high level, and Ad is low level.When Ad is low level, optocoupler or not conducting of relay Oa, not conducting of triode Na, driving interlock circuit does not influence the base stage of half-bridge IGBT pipe Mu and the state of emitter terminal, and the signal of IGBT pipe control end depends on pulse-width signal PWM.Because Au is high level, then optocoupler or relay Ob conducting make triode Nb conducting.The conducting of Nb makes down base stage and the emitter short circuit of half-bridge IGBT pipe Md, and whatsoever reason causes base stage and emitter terminal voltage to rise, triode Nb all the base stage of IGBT pipe and emitter terminal voltage clamper in the conduction voltage drop of triode.When having guaranteed that so last half-bridge IGBT manages conducting, following half-bridge IGBT pipe reliable turn-off.
When making down half-bridge IGBT pipe Md conducting, then input signal Au is low level, and Ad is high level.When Au is low level, optocoupler or not conducting of relay Ob, not conducting of triode Nb, the base stage of half-bridge IGBT pipe Md and the state of emitter terminal under the driving interlock circuit does not influence, the signal of following half-bridge IGBT pipe base stage and emitter terminal depends on Ad.Because Ad is high level, then optocoupler or relay Oa conducting make triode Na conducting.The conducting of Na makes base stage and the emitter terminal short circuit of half-bridge IGBT pipe Mu, and whatsoever reason causes base stage and emitter terminal voltage to rise, triode Na all the base stage of IGBT pipe and emitter terminal voltage clamper triode conduction voltage drop in.When having guaranteed that like this time half-bridge IGBT manages conducting, last half-bridge IGBT pipe reliable turn-off reaches the purpose of half-bridge driven interlocking up and down.
The parts that present embodiment is not described in detail and structure belong to well-known components and common structure or the conventional means of the industry, here not narration one by one.
Claims (9)
1. the interlock of half-bridge driven up and down of a driver for brushless DC motor, at least the last half-bridge drive circuit (1) that comprises driver for brushless DC motor, following half-bridge drive circuit (2), it is characterized in that: first bridge tube (3) of going up in the half-bridge drive circuit (1) is electrically connected with the output control terminal of last half-bridge driven interlock circuit (5), second bridge tube (4) source electrode in the following half-bridge drive circuit (2) is electrically connected with following half-bridge driven interlock circuit (6) output control terminal, last half-bridge driven interlock circuit (5) input is electrically connected with first photoelectrical coupler (7) the input negative terminal Ad of following half-bridge drive circuit (2), and following half-bridge driven interlock circuit (6) input is electrically connected with second photoelectrical coupler (8) the input negative terminal Au of last half-bridge drive circuit (1).
2. the interlock of half-bridge driven up and down of a kind of driver for brushless DC motor according to claim 1, it is characterized in that: described first bridge tube (3) of going up in the half-bridge drive circuit (1) is the MOSFET pipe, be electrically connected with the output control terminal of last half-bridge driven interlock circuit (5) between MOSFET pipe source S and the grid G, second bridge tube (4) in the described half-bridge drive circuit (2) down is the MOSFET pipe, is electrically connected with following half-bridge driven interlock circuit (6) output control terminal between the MOSFET pipe source S in the following half-bridge drive circuit (2) and the grid G.
3. the interlock of half-bridge driven up and down of a kind of driver for brushless DC motor according to claim 1 and 2, it is characterized in that: described half-bridge driven interlock circuit (6) down comprises the 4th photoelectrical coupler 0b, triode Nb, resistance R 3, resistance R 4, triode Nb collector and emitter be output with following half-bridge drive circuit (2) in MOSFET pipe source S and grid G between be electrically connected, the base stage of triode Nb is electrically connected with the phototriode pipe collector of the 4th photoelectrical coupler 0b by resistance R 3, the phototriode emitter of the 4th photoelectrical coupler 0b is electrically connected with the emitter of triode Nb, and the light-emitting diode anode of the 4th photoelectrical coupler 0b is electrically connected with first photoelectrical coupler (7) input Aa by resistance R 4.
4. the interlock of half-bridge driven up and down of a kind of driver for brushless DC motor according to claim 1 and 2, it is characterized in that: the described half-bridge driven interlock circuit (5) of going up comprises the 3rd photoelectrical coupler 0a, triode Na, resistance R 1, resistance R 2, triode Na collector and emitter is output, be electrically connected between MOSFET pipe source S in output and the last half-bridge drive circuit (1) and the grid G, the base stage of triode Na is electrically connected with the phototriode pipe collector of the 3rd photoelectrical coupler 0a by resistance R 1, the phototriode emitter of the 3rd photoelectrical coupler 0a is electrically connected with the emitter of triode Na, and the light-emitting diode anode of the 3rd photoelectrical coupler 0a is electrically connected with second photoelectrical coupler (8) input negative terminal Ad by resistance R 2.
5. the interlock of half-bridge driven up and down of a kind of driver for brushless DC motor according to claim 4, it is characterized in that: described the 3rd photoelectrical coupler 0a is relay.
6. the interlock of half-bridge driven up and down of a kind of driver for brushless DC motor according to claim 3, it is characterized in that: described the 4th photoelectrical coupler 0b is relay.
7. the interlock of half-bridge driven up and down of a kind of driver for brushless DC motor according to claim 1, it is characterized in that: described first bridge tube (3) of going up in the half-bridge drive circuit (1) is the IGBT pipe, be electrically connected with the output control terminal of last half-bridge driven interlock circuit (5) between IGBT pipe emitter e and the base stage b, second bridge tube (4) in the following half-bridge drive circuit (2) is the IGBT pipe, is electrically connected with following half-bridge driven interlock circuit (6) output control terminal between IGBT pipe emitter e and the base stage b.
8. according to the interlock of half-bridge driven up and down of claim 1 or 7 described a kind of driver for brushless DC motor, it is characterized in that: described half-bridge driven interlock circuit (6) down comprises the 4th photoelectrical coupler 0b, triode Nb, resistance R 3, resistance R 4 and diode Db, IGBT pipe base stage b in triode Nb collector electrode and the following half-bridge drive circuit (2) is electrically connected, triode Nb collector electrode is managed emitter e by the IGBT in diode Db and the following half-bridge drive circuit (2) and is electrically connected, the base stage of triode Nb is electrically connected with the phototriode pipe collector of the 4th photoelectrical coupler 0b by resistance R 3, the phototriode emitter of the 4th photoelectrical coupler 0b is electrically connected with the collector electrode of triode Nb, and the light-emitting diode anode of the 4th photoelectrical coupler 0b is electrically connected with first photoelectrical coupler (7) input Au by resistance R 4.
9. according to the interlock of half-bridge driven up and down of claim 1 or 7 described a kind of driver for brushless DC motor, it is characterized in that: the described half-bridge driven interlock circuit (5) of going up comprises the 3rd photoelectrical coupler 0a, triode Na, resistance R 1, resistance R 2 and diode Da, triode Na collector and emitter is output, IGBT pipe base stage b in triode Na emitter and the last half-bridge drive circuit (1) is electrically connected, and the emitter e that triode Na collector electrode passes through the IGBT pipe in diode Da and the last half-bridge drive circuit (1) is electrically connected; The base stage of triode Na is electrically connected with the phototriode pipe collector of the 3rd photoelectrical coupler 0a by resistance R 1, the phototriode emitter of the 3rd photoelectrical coupler 0a is electrically connected with the collector electrode of triode Na, and the light-emitting diode anode of the 3rd photoelectrical coupler 0a is electrically connected with second photoelectrical coupler (8) input negative terminal Ad by resistance R 2.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201320163004 CN203193501U (en) | 2013-04-03 | 2013-04-03 | Upper-lower half-bridge driving interlocking device of DC brushless motor driver |
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| CN 201320163004 CN203193501U (en) | 2013-04-03 | 2013-04-03 | Upper-lower half-bridge driving interlocking device of DC brushless motor driver |
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| CN203193501U true CN203193501U (en) | 2013-09-11 |
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| CN 201320163004 Expired - Fee Related CN203193501U (en) | 2013-04-03 | 2013-04-03 | Upper-lower half-bridge driving interlocking device of DC brushless motor driver |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103138554A (en) * | 2013-04-03 | 2013-06-05 | 西安西驰电子传动与控制有限公司 | Upper half-bridge and lower half-bridge driving interlocking method of brushless direct current motor driver |
| CN105871185A (en) * | 2016-04-25 | 2016-08-17 | 佛山市新光宏锐电源设备有限公司 | Mode control driven self-locking protection circuit |
| CN106253644A (en) * | 2016-08-31 | 2016-12-21 | 广州市泰霖电源设备有限公司 | Low-voltage, high-current Mosfet power model |
-
2013
- 2013-04-03 CN CN 201320163004 patent/CN203193501U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103138554A (en) * | 2013-04-03 | 2013-06-05 | 西安西驰电子传动与控制有限公司 | Upper half-bridge and lower half-bridge driving interlocking method of brushless direct current motor driver |
| CN103138554B (en) * | 2013-04-03 | 2015-04-22 | 西安西驰电子传动与控制有限公司 | Upper half-bridge and lower half-bridge driving interlocking method of brushless direct current motor driver |
| CN105871185A (en) * | 2016-04-25 | 2016-08-17 | 佛山市新光宏锐电源设备有限公司 | Mode control driven self-locking protection circuit |
| CN106253644A (en) * | 2016-08-31 | 2016-12-21 | 广州市泰霖电源设备有限公司 | Low-voltage, high-current Mosfet power model |
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Address after: High tech Zone cottage technology industrial base Qinling Mountains four road 710311 Shaanxi city of Xi'an province No. two Patentee after: Xi'an Spread Electronic Transmission and Control Co., Ltd. Address before: 710119 A4 building, standard factory building, Pioneer Road, new industrial zone, Xi'an hi tech Zone, Shaanxi Patentee before: Xi'an Spread Electronic Transmission and Control Co., Ltd. |
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Assignee: XI'AN SPREAD ELECTRIC COMPANY LIMITED Assignor: Xi'an Spread Electronic Transmission and Control Co., Ltd. Contract record no.: 2016610000017 Denomination of utility model: Upper-lower half-bridge driving interlocking device of DC brushless motor driver Granted publication date: 20130911 License type: Exclusive License Record date: 20160331 |
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