CN201623652U - Full bridge inverter circuit and unidirection inverter power supply comprising the same - Google Patents
Full bridge inverter circuit and unidirection inverter power supply comprising the same Download PDFInfo
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- CN201623652U CN201623652U CN2009202622545U CN200920262254U CN201623652U CN 201623652 U CN201623652 U CN 201623652U CN 2009202622545 U CN2009202622545 U CN 2009202622545U CN 200920262254 U CN200920262254 U CN 200920262254U CN 201623652 U CN201623652 U CN 201623652U
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Abstract
The utility model provides a full bridge inverter circuit and a unidirection inverter power supply. The full bridge inverter circuit comprises two MOS (Metal Oxide Semiconductor) tubes, two IGBT (Insulated Gate Bipolar Translator) tubes and four backward diodes, wherein each MOS tube and each IGBT tube are respectively connected with one backward diode in parallel; the two MOS tubes and the two IGBT tubes form four bridge arms, wherein the two IGBT tubes form leading arms, and the two MOS tubes form lagging arms. The switching loss in the full bridge inverter circuit and the unidirection inverter power supply is small, and thereby, the output efficiency of the full bridge inverter circuit and the unidirection inverter power supply is improved.
Description
Technical field
The utility model belongs to power technique fields, relates in particular to a kind of full bridge inverter and has the unidirectional inverter of this circuit.
Background technology
In solar power generation or power supply on vehicle field, need inverter the 12V direct current to be converted to the AC220V alternating current identical with civil power by transistor circuit is enough, use for corresponding load.As shown in Figure 1, the conventional inversion power supply comprises control module 1a, driver module 2a, inversion full-bridge circuit 3a, 12V DC power supply 4a, and sampling isolation module 5a.Control module 1a is connected with driver module electricity 2a, and driver module 2a is electrically connected with the control end of inversion full-bridge circuit 3a, and the input of inversion full-bridge circuit is electrically connected with 12V DC power supply 4a.2a exports four road PWM ripples by control module 1a control and driving module, makes the transistor turns among the inversion full-bridge circuit 3a, and the 12V direct current is converted to the AC220V alternating current identical with civil power.The inversion full-bridge circuit comprises four brachium pontis, and wherein two brachium pontis are leading arm, controls its turn-on and turn-off by two-way low frequency PWM ripple, and two other brachium pontis is a lagging leg, controls its turn-on and turn-off by two-way high-frequency PWM ripple.When the needs power output hour, as shown in Figure 2, four brachium pontis all adopt metal-oxide-semiconductor to realize, when the power output of needs was big, as shown in Figure 3, leading arm and lagging leg all adopted the IGBT pipe to realize, but when adopting IGBT to realize full-bridge inverting, the lagging leg switching frequency is restricted, and the high more switching loss of frequency is big more, reduces the delivery efficiency of inversion full-bridge circuit 3a.And when adopting metal-oxide-semiconductor to realize full-bridge inverting, leading arm switch frequency is very low, and the metal-oxide-semiconductor conduction loss is very big, also can reduce the delivery efficiency of inversion full-bridge circuit 3a.
The utility model content
The utility model is big for solving in the prior art switching loss, can reduce the problem of inversion full-bridge circuit delivery efficiency, provides a kind of switching loss little and improve the inversion full-bridge circuit of inversion full-bridge circuit delivery efficiency and have the unidirectional inverter of this circuit.
The utility model provides a kind of inversion full-bridge circuit, comprise two metal-oxide-semiconductors, two IGBT pipes and four backward diodes, each metal-oxide-semiconductor and each IGBT pipe are in parallel with a backward diode respectively, two metal-oxide-semiconductors and two IGBT pipes form four brachium pontis, wherein two IGBT pipes form leading arm, and two metal-oxide-semiconductors form lagging leg.
Further improve, two metal-oxide-semiconductors all are positioned at brachium pontis or two IGBT and manage and all be positioned at brachium pontis.
Further improve, a metal-oxide-semiconductor and an IGBT all are positioned at brachium pontis.
The utility model also provides a kind of unidirectional inverter, comprise control module, driver module, DC power supply, described control module is electrically connected with control and driving module with described driver module, also comprise above-mentioned full bridge inverter, the input of described full bridge inverter is electrically connected with described DC power supply, and described driver module is electrically connected to drive the conducting of described full bridge inverter with the control end of described full bridge inverter.
Further improve, described unidirectional inverter also comprises the sampling feedback module of the output end voltage that is used to detect described full bridge inverter, the input of described sampling feedback module is electrically connected with the output of full bridge inverter, and the output of described sampling feedback module is electrically connected with described control module.
Further improve, described control module is the TMS320F2812 single-chip microcomputer.
Further improve, described driver module is the HCPL-316J chip.
Further improve, described sampling feedback module is the HCNR201 linear optical coupling.
Inversion full-bridge circuit that the utility model provides and unidirectional inverter with this circuit are compared with prior art, form leading arm by two IGBT pipes, two metal-oxide-semiconductors form lagging leg, low frequency PWM ripple drives the conducting of IGBT pipe, the conducting of high-frequency PWM ripple driven MOS pipe, the switching loss of IGBT pipe and metal-oxide-semiconductor is reduced, improve the delivery efficiency of this inversion full-bridge circuit and unidirectional inverter.
Description of drawings
Fig. 1 is the structured flowchart of unidirectional inverter in the prior art;
Fig. 2 is first kind of circuit diagram of inversion full-bridge circuit in the prior art;
Fig. 3 is second kind of circuit diagram of inversion full-bridge circuit in the prior art;
Fig. 4 is the circuit diagram of first embodiment of inversion full-bridge circuit in the utility model;
Fig. 5 is the circuit diagram of second embodiment of inversion full-bridge circuit in the utility model;
Fig. 6 is the circuit diagram of the 3rd embodiment of inversion full-bridge circuit in the utility model;
Fig. 7 is the circuit diagram of the 4th embodiment of inversion full-bridge circuit in the utility model.
Embodiment
Clearer for technical problem, technical scheme and beneficial effect that the utility model is solved, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
A kind of inversion full-bridge circuit among the embodiment of the present utility model, comprise two metal-oxide-semiconductor M1, M2, two IGBT pipe Q1, Q2 and four backward diode D1-D4, each metal-oxide-semiconductor and each IGBT pipe are in parallel with a backward diode respectively, two metal-oxide-semiconductor M1, M2 and two IGBT pipe Q1, Q2 forms four brachium pontis, wherein two IGBT manage Q1, Q2 forms leading arm, two metal-oxide-semiconductor M1, and M2 forms lagging leg.
Further improve, described metal-oxide-semiconductor comprises the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2, described IGBT pipe comprises IGBT pipe Q1 and the 2nd IGBT pipe Q2, be parallel with the first backward diode D1 on the described IGBT pipe Q1, be parallel with the second backward diode D2 on described the 2nd IGBT pipe Q2, be parallel with the 3rd backward diode D3 on the described first metal-oxide-semiconductor M1, be parallel with the 4th backward diode D4 on the described second metal-oxide-semiconductor M2.
Further improve, two metal-oxide-semiconductors all are positioned at brachium pontis or two IGBT and manage and all be positioned at brachium pontis.As shown in Figure 4, first embodiment of inversion full-bridge circuit of the present utility model, two IGBT pipe Q1, Q2 is positioned at brachium pontis, two metal-oxide-semiconductor M1, M2 is positioned at brachium pontis down, the source electrode of the source electrode of the one IGBT pipe Q1 and the 2nd IGBT pipe Q2 forms the first input end of DC power supply, the base stage of the one IGBT pipe Q1 and the source electrode of the first metal-oxide-semiconductor M1 are connected to form first output of AC power, the base stage of the 2nd IGBT pipe Q2 and the source electrode of the second metal-oxide-semiconductor M2 are connected to form second output of AC power, the base stage of the base stage of the first metal-oxide-semiconductor M1 and the 2nd IGBT pipe Q2 is connected to form second input of DC power supply, two IGBT pipe Q1, Q2 and two metal-oxide-semiconductor M1, the grid of M2 are used to receive the drive signal of driver module with conducting or shutoff.
As shown in Figure 5, second embodiment of inversion full-bridge circuit of the present utility model is with the first embodiment difference: two metal-oxide-semiconductor M1, and M2 is positioned at brachium pontis, and two IGBT pipe Q1, Q2 is positioned at brachium pontis down.
Further improve, one of them metal-oxide-semiconductor is positioned at left brachium pontis, and another metal-oxide-semiconductor is positioned at the bottom left brachium pontis.Can certainly be that one of them IGBT pipe is positioned at left brachium pontis, another IGBT pipe be positioned at the bottom left brachium pontis.As shown in Figure 6, the 3rd embodiment of inversion full-bridge circuit of the present utility model, the first metal-oxide-semiconductor M1 is positioned at left brachium pontis, the second metal-oxide-semiconductor M2 is positioned at the bottom left brachium pontis, the one IGBT pipe Q1 is positioned at right brachium pontis, the 2nd IGBT pipe Q2 is positioned at the bottom right brachium pontis, the source electrode of the source electrode of the first metal-oxide-semiconductor M1 and IGBT pipe Q1 forms the first input end of DC power supply, the source electrode of the base stage of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 is connected to form first output of AC power, the source electrode of the base stage of the one IGBT pipe Q1 and the 2nd IGBT pipe Q2 is connected to form second output of AC power, and the base stage of the base stage of the second metal-oxide-semiconductor M2 and the 2nd IGBT pipe Q2 is connected to form second input of DC power supply.
As shown in Figure 7, the 4th embodiment of inversion full-bridge circuit of the present utility model is with the 3rd embodiment difference: IGBT pipe Q1 is positioned at left brachium pontis, and the 2nd IGBT pipe Q2 is positioned at the bottom left brachium pontis, the first metal-oxide-semiconductor M1 is positioned at right brachium pontis, and the second metal-oxide-semiconductor M2 is positioned at the bottom right brachium pontis.
A kind of unidirectional inverter among the embodiment of the present utility model, comprise control module, driver module, DC power supply, described control module is electrically connected with control and driving module with described driver module, also comprise above-mentioned full bridge inverter, the input of described full bridge inverter is electrically connected with described DC power supply, and described driver module is electrically connected to drive the conducting of described full bridge inverter with the control end of described full bridge inverter.
Further improve, described unidirectional inverter also comprises the sampling feedback module of the output end voltage that is used to detect described full bridge inverter, the input of described sampling feedback module is electrically connected with the output of full bridge inverter, and the output of described sampling feedback module is electrically connected with described control module.
Further improve, control module can be a single-chip microcomputer, also can be dsp processor, preferable case: described control module is the TMS320F2812 single-chip microcomputer.
Further improve, described driver module is the HCPL-316J chip, sends four kinds of high frequency, low frequency PWM ripples that sequential is different according to the control signal of control module.
Further improve, described sampling feedback module is the HCNR201 linear optical coupling, the magnitude of voltage of described sampling feedback module samples full bridge inverter output, transform into sampled signal and send to control module, control module compares the signal of sampled signal and inner setting, to change the different high frequency of four kinds of sequential, the duty ratio of low frequency PWM ripple.
For inversion full-bridge circuit and the unidirectional inverter that illustrates that further the embodiment of the invention provides, existing details are as follows in conjunction with specific embodiments:
Control module is sent control signal, control and driving module is sent four kinds of high frequency, low frequency PWM ripples that sequential is different, thereby drive the conducting of inversion full-bridge circuit, the input of inversion full-bridge circuit is connected with the 12V DC power supply, and the conducting of inversion full-bridge circuit makes the alternating current of inversion full-bridge circuit output 220V voltage.The sampling feedback module is used to detect the magnitude of voltage of inversion full-bridge circuit output, is converted into sampled signal and sends to control module and send control signal to adjust control module, sends the different high frequency of four kinds of sequential, the duty ratio of low frequency PWM ripple thereby change driver module.
In the inversion full-bridge circuit of the present utility model, two IGBT pipe Q1, Q2 forms leading arm, two metal-oxide-semiconductor M1, M2 forms lagging leg, with first embodiment among Fig. 4 is example, when first IGBT pipe Q1 conducting, owing to drive two IGBT pipe Q1, the PWM ripple of Q2 is opposite with level in the work period, therefore not conducting of second IGBT pipe Q2, two metal-oxide-semiconductor M1, M2 forms lagging leg, when first IGBT pipe Q1 conducting, the second metal-oxide-semiconductor M2 that is connected to form the loop with first IGBT pipe Q1 starts working, because the PWM ripple of driven MOS pipe is a high-frequency signal, therefore the second metal-oxide-semiconductor M2 constantly switches between conducting state and off state according to the sequential of PWM ripple, and the inversion full-bridge circuit is just exported the alternating current of certain voltage value.When second IGBT pipe Q2 conducting, also just not conducting of first IGBT pipe Q1, and start working with the second metal-oxide-semiconductor M2 that second IGBT pipe Q2 is connected to form the loop.Because metal-oxide-semiconductor its loss when switch switches fast is little, and its loss is big when conducting, its loss when conducting of IGBT pipe is little, and its loss is big when switch switches fast, therefore the IGBT pipe forms leading arm in the inversion full-bridge circuit of the present utility model, metal-oxide-semiconductor forms lagging leg, the IGBT pipe is in certain hour conducting always in the cycle, and metal-oxide-semiconductor is in the turn-on cycle of IGBT pipe, constantly between conducting state and off state, switch, make that inversion full-bridge circuit switching loss of IGBT pipe and metal-oxide-semiconductor in the output AC electricity is all smaller, thereby the switching loss of reduction inversion full-bridge circuit improves the delivery efficiency of this inversion full-bridge circuit and unidirectional inverter.
The above only is preferred embodiment of the present utility model; not in order to restriction the utility model; all any modifications of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the protection range of the present utility model.
Claims (8)
1. full bridge inverter, it is characterized in that: comprise two metal-oxide-semiconductors, two IGBT pipes and four backward diodes, each metal-oxide-semiconductor and each IGBT pipe are in parallel with a backward diode respectively, two metal-oxide-semiconductors and two IGBT pipes form four brachium pontis, wherein two IGBT pipes form leading arm, and two metal-oxide-semiconductors form lagging leg.
2. full bridge inverter as claimed in claim 1 is characterized in that: two metal-oxide-semiconductors all are positioned at brachium pontis or two IGBT pipes all are positioned at brachium pontis.
3. full bridge inverter as claimed in claim 1 is characterized in that: one of them metal-oxide-semiconductor and one of them IGBT all are positioned at brachium pontis.
4. unidirectional inverter, comprise control module, driver module, DC power supply, described control module is electrically connected with described driver module to control described driver module, it is characterized in that: also comprise any described full bridge inverter as claim 1-5, the input of described full bridge inverter is electrically connected with described DC power supply, and described driver module is electrically connected to drive the conducting of described full bridge inverter with the control end of described full bridge inverter.
5. unidirectional inverter as claimed in claim 4, it is characterized in that: described unidirectional inverter also comprises the sampling feedback module of the output end voltage that is used to detect described full bridge inverter, the input of described sampling feedback module is electrically connected with the output of full bridge inverter, and the output of described sampling feedback module is electrically connected with described control module.
6. unidirectional inverter as claimed in claim 4 is characterized in that: described control module is the TMS320F2812 single-chip microcomputer.
7. unidirectional inverter as claimed in claim 4 is characterized in that: described driver module is the HCPL-316J chip.
8. unidirectional inverter as claimed in claim 4 is characterized in that: described sampling feedback module is the HCNR201 linear optical coupling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202622545U CN201623652U (en) | 2009-12-31 | 2009-12-31 | Full bridge inverter circuit and unidirection inverter power supply comprising the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202622545U CN201623652U (en) | 2009-12-31 | 2009-12-31 | Full bridge inverter circuit and unidirection inverter power supply comprising the same |
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| CN201623652U true CN201623652U (en) | 2010-11-03 |
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| CN2009202622545U Expired - Lifetime CN201623652U (en) | 2009-12-31 | 2009-12-31 | Full bridge inverter circuit and unidirection inverter power supply comprising the same |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103490658A (en) * | 2013-09-06 | 2014-01-01 | 西安电子科技大学 | Drive circuit of single-phase inverter |
| CN103915425A (en) * | 2012-12-28 | 2014-07-09 | 三菱电机株式会社 | Power semiconductor device |
| CN104170237A (en) * | 2012-03-12 | 2014-11-26 | 易达有限公司 | Method for controlling an h-bridge inverter |
| CN104242608A (en) * | 2013-06-18 | 2014-12-24 | 英飞凌科技股份有限公司 | Power semiconductor module |
| CN105552900A (en) * | 2016-01-21 | 2016-05-04 | 江苏蒙哥马利电梯有限公司 | Non-contact electric energy transmission system used for elevator |
| CN105811233A (en) * | 2016-04-20 | 2016-07-27 | 华北电力大学（保定） | Full-bridge inverter circuit laser driving circuit |
| CN106160495A (en) * | 2016-08-03 | 2016-11-23 | 深圳市盛弘电气股份有限公司 | Switching power supply |
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2009
- 2009-12-31 CN CN2009202622545U patent/CN201623652U/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104170237A (en) * | 2012-03-12 | 2014-11-26 | 易达有限公司 | Method for controlling an h-bridge inverter |
| CN104170237B (en) * | 2012-03-12 | 2017-05-24 | 易达有限公司 | method for controlling an H-bridge inverter |
| CN103915425A (en) * | 2012-12-28 | 2014-07-09 | 三菱电机株式会社 | Power semiconductor device |
| CN104242608A (en) * | 2013-06-18 | 2014-12-24 | 英飞凌科技股份有限公司 | Power semiconductor module |
| US9726711B2 (en) | 2013-06-18 | 2017-08-08 | Infineon Technologies Ag | Power semiconductor module comprising a power electronics circuit and an arrangement for measuring and transferring measurement data |
| CN104242608B (en) * | 2013-06-18 | 2017-09-26 | 英飞凌科技股份有限公司 | Power semiconductor modular |
| CN103490658A (en) * | 2013-09-06 | 2014-01-01 | 西安电子科技大学 | Drive circuit of single-phase inverter |
| CN105552900A (en) * | 2016-01-21 | 2016-05-04 | 江苏蒙哥马利电梯有限公司 | Non-contact electric energy transmission system used for elevator |
| CN105811233A (en) * | 2016-04-20 | 2016-07-27 | 华北电力大学（保定） | Full-bridge inverter circuit laser driving circuit |
| CN105811233B (en) * | 2016-04-20 | 2019-02-26 | 华北电力大学（保定） | A kind of full bridge inverter laser driving circuit |
| CN106160495A (en) * | 2016-08-03 | 2016-11-23 | 深圳市盛弘电气股份有限公司 | Switching power supply |
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Granted publication date: 20101103 |
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