CN105811233B - A kind of full bridge inverter laser driving circuit - Google Patents
A kind of full bridge inverter laser driving circuit Download PDFInfo
- Publication number
- CN105811233B CN105811233B CN201610264836.1A CN201610264836A CN105811233B CN 105811233 B CN105811233 B CN 105811233B CN 201610264836 A CN201610264836 A CN 201610264836A CN 105811233 B CN105811233 B CN 105811233B
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- China
- Prior art keywords
- input terminal
- inductance
- diode
- igbt3
- igbt2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inverter Devices (AREA)
Abstract
A kind of full bridge inverter laser driving circuit, including input terminal, wherein input terminal includes positive input terminal vin+ and negative input end vin-, positive input terminal is connected respectively to one end of capacitor C1 and the collector of insulated-gate type field effect transistor IGBT1 and IGBT3, negative input end vin- is connected respectively to the emitter of capacitor C1 other end and insulated-gate type field effect transistor IGBT2 and IGBT4, IGBT1, IGBT2, IGBT3, the gate pole of IGBT4 is respectively through resistance R1, R2, R4, R5 are connected to Micro-processor MCV.
Description
Technical field
The present invention relates to a kind of driving circuits of laser, belong to photoelectron technical field.
Background technique
There are many kinds of the types of laser, as solid state laser, gas laser, semiconductor laser, optical fiber laser
Etc..In these lasers, in addition to part semiconductor laser belongs to Direct Current pumping, remaining laser is substantially
All it is to be pumped by pumping source, especially for powerful laser, needs using powerful driving circuit pair
Pumping source is driven, to generate powerful pump light, but is set in the prior art generally be directed to different lasers
Different driving circuits is counted, general driving circuit, which seldom passes through simply to change, can be adapted on other lasers.Also, it is right
For the driving circuit of high power laser, the driving voltage that superpower laser generally requires is also relatively high, at this point, transformation
Device is not easy to design, and is mainly reflected in the problems such as insulation is bad, and parasitic capacitance is big, and leakage inductance is big, furthermore transformer in this way in circuit
Secondary devices are not easy to choose.The present invention exactly puts forward regarding to the issue above.
Summary of the invention
An embodiment according to the present invention provides a kind of full bridge inverter laser driving circuit, including input terminal,
Wherein input terminal includes positive input terminal vin+ and negative input end vin-, and positive input terminal is connected respectively to one end and absolutely of capacitor C1
The collector of edge grid-type field effect transistor IGBT1 and IGBT3, negative input end vin- be connected respectively to capacitor C1 other end with
And the emitter of insulated-gate type field effect transistor IGBT2 and IGBT4, IGBT1, IGBT2, the gate pole difference of IGBT3, IGBT4
Micro-processor MCV is connected to through resistance R1, R2, R4, R5.The emitter of IGBT3 be connected to one end of current sensor ISEN1 with
And one end of transformer T1 primary coil, the emitter of IGBT1 are connected to one end of inductance L3, transformer T1 primary coil it is another
The collector of outer one end and IGBT2, the other end of the other end connection current sensor ISEN1 of inductance L3, transformer
Two output ends of T1 grade, an output end connect the cathode of diode D1 and the anode of diode D2, another output
The anode of the cathode of end connection diode D3 and the anode of diode D4, D2 and D4 are all connected to one end of inductance L2, diode
The anode of D1 and D3 is all connected to one end of DC filter capacitor Cd, and the other end of DC filter capacitor Cd is connected to inductance L2
Other end, output voltage detecting circuit and inductance R3 are in parallel with DC filter capacitor Cd.Output voltage detecting circuit
The output end of output end and current sensor ISEN1 are all connected to Micro-processor MCV.One end of resistance R3 is also connected to controllably
The anode of silicon SCR, the cathode of SCR are connected to one end of laser, in addition the other end of resistance R3 is also connected to laser
One end.
Detailed description of the invention
Attached drawing 1 is the schematic diagram of laser driving circuit of the invention.
Specific embodiment
Below will on the basis of in conjunction with attached drawing detailed description of the present invention laser driving circuit.Laser of the invention
Driving circuit concrete composition is as follows:
Including input terminal, wherein input terminal includes positive input terminal vin+ and negative input end vin-, and positive input terminal is separately connected
To one end of capacitor C1 and the collector of insulated-gate type field effect transistor IGBT1 and IGBT3, negative input end vin- connects respectively
It is connected to the emitter of capacitor C1 other end and insulated-gate type field effect transistor IGBT2 and IGBT4, IGBT1, IGBT2,
The gate pole of IGBT3, IGBT4 are connected to Micro-processor MCV through resistance R1, R2, R4, R5 respectively.The emitter of IGBT3 is connected to electricity
One end of flow sensor ISEN1 and one end of transformer T1 primary coil, the emitter of IGBT1 are connected to the one of inductance L3
The other end of end, the other end of transformer T1 primary coil and the collector of IGBT2, inductance L3 connects current sensor
The other end of ISEN1, two output ends of T1 grade of transformer, the cathode and diode of an output end connection diode D1
The anode of the anode of D2, the cathode of another output end connection diode D3 and the anode of diode D4, D2 and D4 all connect
Anode to one end of inductance L2, diode D1 and D3 is all connected to one end of DC filter capacitor Cd, DC filter capacitor Cd
Other end be connected to the other end of inductance L2, output voltage detecting circuit and inductance R3 with DC filter capacitor Cd simultaneously
Connection.The output end of output voltage detecting circuit and the output end of current sensor ISEN1 are all connected to Micro-processor MCV.Electricity
One end of resistance R3 is also connected to the anode of controllable silicon SCR, and the cathode of SCR is connected to one end of laser, and other the one of resistance R3
End is also connected to the other end of laser.
The present invention is a kind of full bridge inverter laser driving circuit.Wherein C1 is DC filter capacitor, D1, D2,
D3, D4, L2, Cd are output rectifier and filter, and R1, R2, R3, R4 are driving resistance, and MCU is controller.
Working method is as follows, and IGBT3 is simultaneously turned on IGBT2, after simultaneously turn off, rear IGBT1 and IGBT4 is simultaneously turned on,
It simultaneously turns off again afterwards, wherein the turn-on time of the turn-on time of (IGBT3, IGBT2) and (IGBT1, IGBT4) are identical, this conducting
Time is determined by the output voltage needed, when the output voltage needed is high, MCU export (IGBT3, IGBT2) and (IGBT1,
IGBT4 driving pulse) broadens, and when the output voltage needed is low, MCU exports (IGBT3, IGBT2) and (IGBT1, IGBT4)
Driving pulse narrows, and achievees the purpose that control output voltage by adjusting the width of driving pulse
Due to the difference of device parameters in actual circuit, the turn-on time of (IGBT3, IGBT2) and (IGBT1, IGBT4) is not
May be identical, this can generate a DC component on transformer T1, and the cumulative of this DC component may result in transformation
Device T1 saturation.Solve the problems, such as that this can concatenate capacitance with T1 and block DC channel in practice, but the method is expensive.
Can also T1 primary be added current detection means, the moment detect DC component, thus the moment adjust (IGBT3, IGBT2) and
Achieve the purpose that eliminate DC component between (IGBT1, IGBT4) conducting.But due in general circuit alternating current it is very big, and
DC component may be less than the 1% of entire electric current, and this small DC component is possible to that transformer is caused to be saturated, and can detect
For the current detection means of entire current range when detecting small DC component, precision is inadequate, and possible detected at all is less than direct current
The current detection means precision of component, small range is good, but in the case where this high current, can not apply.
The present invention is incorporated to inductance L3 at the both ends transformer T1, and current detection means Isen1, the inductance of L3 are concatenated on L3
Amount much larger than L1 inductance and T1 magnetizing inductance, but the DC impedance R of L3 much smaller than L1 DC impedance and T1 it is straight
Flow impedance, in this way, the alternating current in circuit seldom flows through L3, but most DC component can pass through L3, such Isen1
Can use small-range high precision electro flow detection device, precise measurement DC component size, thus the moment adjust (IGBT3,
IGBT2) and (IGBT1, IGBT4) turn-on time achievees the purpose that eliminate DC component.
Claims (1)
1. a kind of full bridge inverter laser driving circuit, including input terminal, wherein input terminal include positive input terminal vin+ and
Negative input end vin-, positive input terminal be connected respectively to capacitor C1 one end and insulated-gate type field effect transistor IGBT1 and
The collector of IGBT3, negative input end vin- are connected respectively to capacitor C1 other end and insulated-gate type field effect transistor
The emitter of IGBT2 and IGBT4, IGBT1, IGBT2, the gate pole of IGBT3, IGBT4 are connected to through resistance R1, R2, R4, R5 respectively
Micro-processor MCV, the emitter of IGBT3 be connected to current sensor ISEN1 one end and transformer T1 primary coil one
End, the emitter of IGBT1 are connected to one end of inductance L3, the other end of transformer T1 primary coil and the current collection of IGBT2
Pole, the other end of the other end connection current sensor ISEN1 of inductance L3, two output ends of T1 grade of transformer, one
The cathode of a output end connection diode D1 and the anode of diode D2, another output end connect diode D3 cathode and
The cathode of the anode of diode D4, D2 and D4 are all connected to one end of inductance L2, and the anode of diode D1 and D3 are all connected to directly
One end of filter capacitor Cd is flowed, the other end of DC filter capacitor Cd is connected to the other end of inductance L2, output voltage inspection
Slowdown monitoring circuit and resistance R3 are in parallel with DC filter capacitor Cd, the output end and current sensor of output voltage detecting circuit
The output end of ISEN1 is all connected to Micro-processor MCV, and one end of resistance R3 is also connected to the anode of controllable silicon SCR, the yin of SCR
Pole is connected to one end of laser, and the other end of resistance R3 is also connected to the other end of laser.
Priority Applications (1)
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CN201610264836.1A CN105811233B (en) | 2016-04-20 | 2016-04-20 | A kind of full bridge inverter laser driving circuit |
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CN201610264836.1A CN105811233B (en) | 2016-04-20 | 2016-04-20 | A kind of full bridge inverter laser driving circuit |
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CN105811233A CN105811233A (en) | 2016-07-27 |
CN105811233B true CN105811233B (en) | 2019-02-26 |
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CN201610264836.1A Expired - Fee Related CN105811233B (en) | 2016-04-20 | 2016-04-20 | A kind of full bridge inverter laser driving circuit |
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CN106451060B (en) * | 2016-10-13 | 2023-10-27 | 华北电力大学(保定) | Laser driving circuit |
Citations (6)
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CN101447638A (en) * | 2008-12-17 | 2009-06-03 | 北京泰富瑞泽科技有限公司 | Laser excitation power supply and excitation method thereof |
CN201623652U (en) * | 2009-12-31 | 2010-11-03 | 比亚迪股份有限公司 | Full bridge inverter circuit and unidirection inverter power supply comprising the same |
US20110128656A1 (en) * | 2006-12-22 | 2011-06-02 | Mdl Corporation | Output short circuit protection for electronic transformers |
CN203279300U (en) * | 2013-05-29 | 2013-11-06 | 黄河科技学院 | Capacitor-free full-bridge inversion full-wave rectification LED driving circuit |
CN104319610A (en) * | 2014-08-27 | 2015-01-28 | 华北电力大学(保定) | Laser driving circuit |
CN205724358U (en) * | 2016-04-20 | 2016-11-23 | 华北电力大学(保定) | A kind of full bridge inverter drive circuit for laser |
-
2016
- 2016-04-20 CN CN201610264836.1A patent/CN105811233B/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110128656A1 (en) * | 2006-12-22 | 2011-06-02 | Mdl Corporation | Output short circuit protection for electronic transformers |
CN101447638A (en) * | 2008-12-17 | 2009-06-03 | 北京泰富瑞泽科技有限公司 | Laser excitation power supply and excitation method thereof |
CN201623652U (en) * | 2009-12-31 | 2010-11-03 | 比亚迪股份有限公司 | Full bridge inverter circuit and unidirection inverter power supply comprising the same |
CN203279300U (en) * | 2013-05-29 | 2013-11-06 | 黄河科技学院 | Capacitor-free full-bridge inversion full-wave rectification LED driving circuit |
CN104319610A (en) * | 2014-08-27 | 2015-01-28 | 华北电力大学(保定) | Laser driving circuit |
CN205724358U (en) * | 2016-04-20 | 2016-11-23 | 华北电力大学(保定) | A kind of full bridge inverter drive circuit for laser |
Non-Patent Citations (1)
Title |
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激光电容半桥串联谐振充电电源研究;撒昱;《电力电子技术》;20100331;第44卷(第3期);第14-15页 |
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Granted publication date: 20190226 |