CN104319610A - Laser driving circuit - Google Patents
Laser driving circuit Download PDFInfo
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- CN104319610A CN104319610A CN201410440614.1A CN201410440614A CN104319610A CN 104319610 A CN104319610 A CN 104319610A CN 201410440614 A CN201410440614 A CN 201410440614A CN 104319610 A CN104319610 A CN 104319610A
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Abstract
The invention relates to a laser driving circuit. When an MOS tube M1 and an MOS tube M2 are connected at the same time, an inductor L1 stores energy, and a transformer T2 does not transmit power to a secondary stage. The MOS tube M1 is turned off, a transformer T2 enables the energy of the inductor L1 to be transmitted to the secondary stage. Moreover, when the MOS tube M1 and the MOS tube M2 are connected at the same time, the inductor L1 stores energy again. The MOS tube M2 is turned off, the transformer T2 transmits power to the secondary stage again. The above steps are carried out circularly. The voltages of the central points of two primary coils of the transformer T2 are higher than an input voltage, and are stepped up through the transformer T2, thereby obtaining the voltages required by the secondary stage. When the voltage of a capacitor C1 is slightly higher than a required voltage, the MOS tube M1 and the MOS tube M2 are turned off, the capacitor C1 is not charged. The capacitor C1 is discharged through a resistor R1, a resistor R2 and a resistor R3 slowly. When the voltage reaches the voltage required by a load, a silicon controlled rectifier THY1 is triggered, the capacitor C1 discharges to the load. When the discharge current is zero, the silicon controlled rectifier THY1 is turned off automatically, thereby completing one-time pulse discharging. Secondly, the MOS tube M1 and the MOS tube M2 are started, the next pulse discharging process starts. The above process is carried out circularly.
Description
Technical field
The present invention relates to a kind of drive circuit for laser, relate generally to the drive circuit of a kind of solid or gas laser, belong to photoelectron technical field.
Background technology
Solid or gas laser belong to two kinds of very conventional lasers, for different lasers, its drive circuit may be different, the controllability of drive circuit, stability and high efficiency stable operation have been continuous developing direction since laser occurs, nearly all drive circuit for laser is being pursued continuing to optimize of these targets always and is being promoted, because these indexs of drive circuit directly decide the service behaviour of laser.The drive circuit for laser of current majority often a kind of circuit structure is only applicable to a kind of laser and uses, if and change a kind of laser, then may just can not use, and it is large that existing drive circuit all also exists power consumption, efficiency is low, discharge instability, lack the outstanding problems such as effective protective circuit, the present invention puts forward for these defects just, technical problem above effectively can be solved according to drive circuit of the present invention, and according to different output voltage requirements, as long as the transformer in suitable change circuit, this circuit structure can be applied to solid state laser or gas laser.
Summary of the invention
According to one embodiment of the invention, provide a kind of drive circuit for laser, comprise: positive input terminal Vin+ and negative input end Vin-, wherein positive input terminal Vin+ connects one end of inductance L 1 and resistance R5 respectively, the intermediate point of other one end connection transformer T2 primary coil of inductance L 1, one in two inputs of transformer T2 primary coil connects the drain electrode of metal-oxide-semiconductor M2 and the negative electrode of TVS pipe Z1 respectively, another one in two inputs of transformer T2 primary coil connects a drain electrode of metal-oxide-semiconductor M1 and the negative electrode of TVS pipe Z2 respectively, one in two outputs of transformer T2 secondary coil is connected respectively to the anode of diode D1 and the negative electrode of diode D3, another one output is connected respectively to the anode of diode D2 and the negative electrode of diode D4, diode D1 is connected to one end of electric capacity C1 respectively after being connected with diode D2 negative electrode, one end of resistance R1 and the anode of controllable silicon THY1, diode D3 is connected respectively to other one end of electric capacity C1 after being connected with the anode of diode D4, one end of electric capacity C2, one end of resistance R2, isolation voltage sampling one input of VSEN1 and one end of load, other one end of resistance R1 is connected with one end of resistance R3, other one end of resistance R3 is connected to an other input of isolation voltage sampling VSEN1 respectively, other one end of resistance R2 and other one end of electric capacity C2, silicon controlled negative electrode is connected to other one end of load and an output of transformer T1 secondary coil respectively, silicon controlled G door is connected to an other output of transformer T1 secondary coil, other one end of resistance R5 is connected to one end of resistance R6 respectively, one end of electric capacity C3 and an input of transformer T1 primary coil, negative input end Vin-is wherein connected to the source electrode of metal-oxide-semiconductor M3 respectively, one end of resistance R4, other one end of resistance R6, other one end of electric capacity C3, the anode of the source electrode of metal-oxide-semiconductor M1 and M2 and TVS pipe Z1 and Z2, wherein the gate pole of metal-oxide-semiconductor M2 is connected to one end of resistance R7, the gate pole of metal-oxide-semiconductor M1 is connected to one end of resistance R8, other one end of resistance R7 is connected to MCU by drive circuit Q1, other one end of resistance R8 is connected to MCU by drive circuit Q2, other one end of resistance R4 is connected to the output of MCU and isolation voltage sampling VSEN1 respectively, the gate pole of metal-oxide-semiconductor M3 is connected to MCU, drain electrode is connected to the another one input of transformer T1 primary coil.
According to one embodiment of the invention, wherein, inductance L 1 can be 100uH, and input voltage is 300V, and metal-oxide-semiconductor M1 and M2 switching frequency are 70kHz, and resistance R5 is 200K Ω, and resistance R6 is 2K Ω, and electric capacity C3 is 0.1uF, and transformer T2 no-load voltage ratio is 1 to 1 to 50.
According to one embodiment of the invention, provide a kind of method of work of drive circuit for laser, wherein when metal-oxide-semiconductor M1 and M2 conducting simultaneously, inductance L 1 energy storage, transformer T2 is not to secondary output energy, M1 turn off, transformer T2 by the Energy transmission in inductance L 1 to secondary, again M1 and M2 while conducting, L1 is energy storage again, turn off M2, transformer T2 again to secondary output energy, so circulate.The voltage of transformer T2 two primary coil mid points higher than input voltage, then can obtain secondary required voltage through the first class boost again of transformer T2.When voltage on electric capacity C1 is a little more than voltage required for load, turn off M1 and M2, charge no longer to electric capacity C1, electric capacity C1 is slowly discharged by resistance R1-R3, when reaching load required voltage, triggers controllable silicon THY1, electric capacity C1 is to load discharge, when discharging current is zero, controllable silicon THY1 turns off voluntarily, completes pulsatile once electric discharge.And then open M1 and M2, carry out next pulse discharge process, so circulate.
Accompanying drawing explanation
Accompanying drawing 1 is drive circuit schematic diagram of the present invention;
Embodiment
Drive circuit for laser of the present invention is described in detail below by basis by reference to the accompanying drawings, this drive circuit for laser comprises: positive input terminal Vin+ and negative input end Vin-, wherein positive input terminal Vin+ connects one end of inductance L 1 and resistance R5 respectively, the intermediate point of other one end connection transformer T2 primary coil of inductance L 1, one in two inputs of transformer T2 primary coil connects the drain electrode of metal-oxide-semiconductor M2 and the negative electrode of TVS pipe Z1 respectively, another one in two inputs of transformer T2 primary coil connects a drain electrode of metal-oxide-semiconductor M1 and the negative electrode of TVS pipe Z2 respectively, one in two outputs of transformer T2 secondary coil is connected respectively to the anode of diode D1 and the negative electrode of diode D3, another one output is connected respectively to the anode of diode D2 and the negative electrode of diode D4, diode D1 is connected to one end of electric capacity C1 respectively after being connected with diode D2 negative electrode, one end of resistance R1 and the anode of controllable silicon THY1, diode D3 is connected respectively to other one end of electric capacity C1 after being connected with the anode of diode D4, one end of electric capacity C2, one end of resistance R2, isolation voltage sampling one input of VSEN1 and one end of load, other one end of resistance R1 is connected with one end of resistance R3, other one end of resistance R3 is connected to an other input of isolation voltage sampling VSEN1 respectively, other one end of resistance R2 and other one end of electric capacity C2, silicon controlled negative electrode is connected to other one end of load and an output of transformer T1 secondary coil respectively, silicon controlled G door is connected to an other output of transformer T1 secondary coil, other one end of resistance R5 is connected to one end of resistance R6 respectively, one end of electric capacity C3 and an input of transformer T1 primary coil, negative input end Vin-is wherein connected to the source electrode of metal-oxide-semiconductor M3 respectively, one end of resistance R4, other one end of resistance R6, other one end of electric capacity C3, the anode of the source electrode of metal-oxide-semiconductor M1 and M2 and TVS pipe Z1 and Z2, wherein the gate pole of metal-oxide-semiconductor M2 is connected to one end of resistance R7, the gate pole of metal-oxide-semiconductor M1 is connected to one end of resistance R8, other one end of resistance R7 is connected to MCU by drive circuit Q1, other one end of resistance R8 is connected to MCU by drive circuit Q2, other one end of resistance R4 is connected to the output of MCU and isolation voltage sampling VSEN1 respectively, the gate pole of metal-oxide-semiconductor M3 is connected to MCU, drain electrode is connected to the another one input of transformer T1 primary coil.
Wherein resistance R5, R6, C3 forms input voltage sample circuit, when input voltage is too high, MCU blocks M1, the trigger impulse of M2, realize the protection to circuit, metal-oxide-semiconductor M1, M2 realizing circuit switch, complete voltage modulated, resistance R7, R8 adds that extra drive circuit Q1 and Q2 forms M1, the drive circuit of M2, L1 is energy storage inductor, T2 is step-up transformer, D1-D4 is secondary commutation diode, C1 is energy storage filter capacitor, resistance R1-R4, electric capacity C2, isolation voltage sampling VSEN1 forms output voltage sampling circuit, simultaneously, resistance R1-R3 has the effect regulating C1 voltage, controllable silicon THY1 is for forming the switch of C1 to load discharge, metal-oxide-semiconductor M3 and transformer T1 forms the drive circuit of controllable silicon THY1, MCU is main control unit.
When metal-oxide-semiconductor M1 and M2 conducting simultaneously, inductance L 1 energy storage, transformer T2 is not to secondary output energy, and M1 turns off, transformer T2 by the Energy transmission in inductance L 1 to secondary, M1 and M2 simultaneously conducting again, L1 is energy storage again, turn off M2, transformer T2 again to secondary output energy, so circulate.The voltage of transformer T2 two primary coil mid points higher than input voltage, then can obtain secondary required voltage through the first class boost again of transformer T2.When voltage on electric capacity C1 is a little more than voltage required for load, turn off M1 and M2, charge no longer to electric capacity C1, electric capacity C1 is slowly discharged by resistance R1-R3, when reaching load required voltage, triggers controllable silicon THY1, electric capacity C1 is to load discharge, when discharging current is zero, controllable silicon THY1 turns off voluntarily, completes pulsatile once electric discharge.And then open M1 and M2, carry out next pulse discharge process, so circulate.
By M1 and M2 conducting simultaneously, turn off one of them again, this control mode, first input voltage is once boosted, make the voltage of primary terminal higher than input voltage, reach required secondary voltage through transformer first class boost again, twice boost process reduces the turn ratio of transformer, reduces the design difficulty of transformer.And whole system has reliable and stable, low in energy consumption, the plurality of advantages such as efficiency is high.
In a specific embodiment, inductance L 1 can be 100uH, and input voltage is 300V, and metal-oxide-semiconductor M1 and M2 switching frequency are 70kHz, and resistance R5 is 200K Ω, and resistance R6 is 2K Ω, and electric capacity C3 is 0.1uF, and transformer T2 no-load voltage ratio is 1 to 1 to 50.Choose reasonable is carried out in the concrete output requirement of the laser type that the parameter of other device can drive as required and laser, those skilled in the art can simple computation draw according to the structure of this circuit diagram and operation logic and actual output demand, no longer describe in detail herein.
Claims (3)
1. a drive circuit for laser, comprise: positive input terminal Vin+ and negative input end Vin-, wherein positive input terminal Vin+ connects one end of inductance L 1 and resistance R5 respectively, the intermediate point of other one end connection transformer T2 primary coil of inductance L 1, one in two inputs of transformer T2 primary coil connects the drain electrode of metal-oxide-semiconductor M2 and the negative electrode of TVS pipe Z1 respectively, another one in two inputs of transformer T2 primary coil connects a drain electrode of metal-oxide-semiconductor M1 and the negative electrode of TVS pipe Z2 respectively, one in two outputs of transformer T2 secondary coil is connected respectively to the anode of diode D1 and the negative electrode of diode D3, another one output is connected respectively to the anode of diode D2 and the negative electrode of diode D4, diode D1 is connected to one end of electric capacity C1 respectively after being connected with diode D2 negative electrode, one end of resistance R1 and the anode of controllable silicon THY1, diode D3 is connected respectively to other one end of electric capacity C1 after being connected with the anode of diode D4, one end of electric capacity C2, one end of resistance R2, isolation voltage sampling one input of VSEN1 and one end of load, other one end of resistance R1 is connected with one end of resistance R3, other one end of resistance R3 is connected to an other input of isolation voltage sampling VSEN1 respectively, other one end of resistance R2 and other one end of electric capacity C2, silicon controlled negative electrode is connected to other one end of load and an output of transformer T1 secondary coil respectively, silicon controlled G door is connected to an other output of transformer T1 secondary coil, other one end of resistance R5 is connected to one end of resistance R6 respectively, one end of electric capacity C3 and an input of transformer T1 primary coil, negative input end Vin-is wherein connected to the source electrode of metal-oxide-semiconductor M3 respectively, one end of resistance R4, other one end of resistance R6, other one end of electric capacity C3, the anode of the source electrode of metal-oxide-semiconductor M1 and M2 and TVS pipe Z1 and Z2, wherein the gate pole of metal-oxide-semiconductor M2 is connected to one end of resistance R7, the gate pole of metal-oxide-semiconductor M1 is connected to one end of resistance R8, other one end of resistance R7 is connected to MCU by drive circuit Q1, other one end of resistance R8 is connected to MCU by drive circuit Q2, other one end of resistance R4 is connected to the output of MCU and isolation voltage sampling VSEN1 respectively, the gate pole of metal-oxide-semiconductor M3 is connected to MCU, drain electrode is connected to the another one input of transformer T1 primary coil.
2. drive circuit for laser according to claim 1, wherein, inductance L 1 can be 100uH, input voltage is 300V, and metal-oxide-semiconductor M1 and M2 switching frequency are 70kHz, and resistance R5 is 200K Ω, resistance R6 is 2K Ω, and electric capacity C3 is 0.1uF, and transformer T2 no-load voltage ratio is 1 to 1 to 50.
3. the method for work of drive circuit for laser according to claim 1, wherein when metal-oxide-semiconductor M1 and M2 conducting simultaneously, inductance L 1 energy storage, transformer T2 is not to secondary output energy, and M1 turns off, transformer T2 by the Energy transmission in inductance L 1 to secondary, M1 and M2 conducting simultaneously again, L1 is energy storage again, turns off M2, transformer T2 to secondary output energy, so circulates again.The voltage of transformer T2 two primary coil mid points higher than input voltage, then can obtain secondary required voltage through the first class boost again of transformer T2.When voltage on electric capacity C1 is a little more than voltage required for load, turn off M1 and M2, charge no longer to electric capacity C1, electric capacity C1 is slowly discharged by resistance R1-R3, when reaching load required voltage, triggers controllable silicon THY1, electric capacity C1 is to load discharge, when discharging current is zero, controllable silicon THY1 turns off voluntarily, completes pulsatile once electric discharge.And then open M1 and M2, carry out next pulse discharge process, so circulate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410440614.1A CN104319610B (en) | 2014-08-27 | 2014-08-27 | A kind of drive circuit for laser |
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| CN201410440614.1A CN104319610B (en) | 2014-08-27 | 2014-08-27 | A kind of drive circuit for laser |
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| CN104319610B CN104319610B (en) | 2017-04-05 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105680298A (en) * | 2016-04-01 | 2016-06-15 | 华北电力大学（保定） | Soft-switching laser driving circuit |
| CN105680299A (en) * | 2016-04-01 | 2016-06-15 | 华北电力大学（保定） | Laser driving circuit of soft-switching inversion circuit |
| CN105680297A (en) * | 2016-04-01 | 2016-06-15 | 华北电力大学（保定） | Laser driving circuit of half-bridge/inversion circuit |
| CN105743354A (en) * | 2016-04-20 | 2016-07-06 | 华北电力大学（保定） | Laser drive circuit of single-ended flyback circuit |
| CN105742949A (en) * | 2016-04-01 | 2016-07-06 | 华北电力大学（保定） | High-power laser driving circuit |
| CN105811233A (en) * | 2016-04-20 | 2016-07-27 | 华北电力大学（保定） | Full-bridge inverter circuit laser driving circuit |
| CN105896687A (en) * | 2016-06-18 | 2016-08-24 | 河北工业大学 | Smart charging device based on PWM double-closed-loop control |
| CN105958826A (en) * | 2016-04-20 | 2016-09-21 | 华北电力大学（保定） | Full-bridge soft-switching circuit laser drive circuit |
| CN106209255A (en) * | 2016-06-16 | 2016-12-07 | 青岛海信宽带多媒体技术有限公司 | Optical module and laser bias circuit Poewr control method thereof |
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| CN204144664U (en) * | 2014-08-27 | 2015-02-04 | 华北电力大学（保定） | A kind of drive circuit for laser |
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| US5739643A (en) * | 1994-09-30 | 1998-04-14 | Nec Corporation | Device for supplying electric power to flashlamp and method thereof |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105680297B (en) * | 2016-04-01 | 2018-08-21 | 华北电力大学（保定） | A kind of half-bridge inverter circuit laser driving circuit |
| CN105680299B (en) * | 2016-04-01 | 2018-08-21 | 华北电力大学（保定） | A kind of soft switching inverting circuit laser driving circuit |
| CN105680299A (en) * | 2016-04-01 | 2016-06-15 | 华北电力大学（保定） | Laser driving circuit of soft-switching inversion circuit |
| CN105680298A (en) * | 2016-04-01 | 2016-06-15 | 华北电力大学（保定） | Soft-switching laser driving circuit |
| CN105680298B (en) * | 2016-04-01 | 2018-08-10 | 华北电力大学（保定） | A kind of Sofe Switch laser driving circuit |
| CN105742949A (en) * | 2016-04-01 | 2016-07-06 | 华北电力大学（保定） | High-power laser driving circuit |
| CN105680297A (en) * | 2016-04-01 | 2016-06-15 | 华北电力大学（保定） | Laser driving circuit of half-bridge/inversion circuit |
| CN105742949B (en) * | 2016-04-01 | 2018-07-17 | 华北电力大学（保定） | A kind of driving circuit of high power laser |
| CN105811233A (en) * | 2016-04-20 | 2016-07-27 | 华北电力大学（保定） | Full-bridge inverter circuit laser driving circuit |
| CN105958826A (en) * | 2016-04-20 | 2016-09-21 | 华北电力大学（保定） | Full-bridge soft-switching circuit laser drive circuit |
| CN105743354A (en) * | 2016-04-20 | 2016-07-06 | 华北电力大学（保定） | Laser drive circuit of single-ended flyback circuit |
| CN105958826B (en) * | 2016-04-20 | 2018-11-16 | 华北电力大学（保定） | A kind of full bridge soft switch circuit laser driving circuit |
| CN105811233B (en) * | 2016-04-20 | 2019-02-26 | 华北电力大学（保定） | A kind of full bridge inverter laser driving circuit |
| CN106209255A (en) * | 2016-06-16 | 2016-12-07 | 青岛海信宽带多媒体技术有限公司 | Optical module and laser bias circuit Poewr control method thereof |
| CN106209255B (en) * | 2016-06-16 | 2018-09-07 | 青岛海信宽带多媒体技术有限公司 | Optical module and its laser bias circuit Poewr control method |
| CN105896687A (en) * | 2016-06-18 | 2016-08-24 | 河北工业大学 | Smart charging device based on PWM double-closed-loop control |
| CN105896687B (en) * | 2016-06-18 | 2018-03-27 | 河北工业大学 | Intelligent charger based on PWM double-closed-loop controls |
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