CN104319610B - A kind of drive circuit for laser - Google Patents
A kind of drive circuit for laser Download PDFInfo
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- CN104319610B CN104319610B CN201410440614.1A CN201410440614A CN104319610B CN 104319610 B CN104319610 B CN 104319610B CN 201410440614 A CN201410440614 A CN 201410440614A CN 104319610 B CN104319610 B CN 104319610B
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Abstract
A kind of drive circuit for laser, when metal-oxide-semiconductor M1 and M2 are simultaneously turned on, inductance L1 energy storage, transformer T2 is not to secondary output energy, M1 shut-offs, transformer T2 is by the energy output in inductance L1 to secondary, M1 and M2 is simultaneously turned on again, L1 energy storage again, turns off M2, transformer T2 to secondary output energy, is so circulated again.The voltage at two primary coil midpoints of transformer T2 can be higher than input voltage, then obtain the voltage required for secondary through the first class boost again of transformer T2.When voltage on electric capacity C1 slightly above loads required voltage, shut-off M1 and M2, no longer charge to electric capacity C1, electric capacity C1 is slowly discharged by resistance R1 R3, when reaching load required voltage, triggers controllable silicon THY1, electric capacity C1 is to load discharge, when discharge current is zero, controllable silicon THY1 is voluntarily turned off, and completes pulsatile once electric discharge.Then M1 and M2 is then turned on, next pulse discharge process are carried out, is so circulated.
Description
Technical field
The present invention relates to a kind of drive circuit for laser, relates generally to the drive circuit of a kind of solid or gas laser,
Belong to photoelectron technical field.
Background technology
Solid or gas laser belong to two kinds of very conventional laser instruments, for different laser instruments, its drive circuit
It is possibly different, the controllability of drive circuit, stability and efficient stable operation be since laser instrument occurs constantly
Developing direction, almost all of drive circuit for laser pursuing continuing to optimize and being lifted for these targets always, because driving
These indexs of dynamic circuit directly decide the service behaviour of laser instrument.Most drive circuit for laser is often one kind at present
Circuit structure is only applicable to a kind of laser instrument and uses, and if changing a kind of laser instrument, then cannot may use, and existing
Drive circuit all has that power consumption is big, efficiency is low, discharge instability, shortage are effectively protected the outstanding problems such as circuit, the present invention
Exactly put forward for these defects, the technical problem that drive circuit of the invention can be above effectively solving, and root
Require according to different output voltages, as long as the appropriate transformer changed in circuit, you can the circuit structure is applied to solid
Laser instrument or gas laser.
The content of the invention
An a kind of embodiment of the invention, there is provided drive circuit for laser, including:Positive input terminal Vin+ is defeated with negative
Enter and hold Vin-, wherein positive input terminal Vin+ connects one end of inductance L1 and resistance R5 respectively, the other end connection of inductance L1 becomes
The intermediate point of depressor T2 primary coils, in two inputs of transformer T2 primary coils connect metal-oxide-semiconductor M2's respectively
Drain electrode and the negative electrode of TVS pipe Z1, another in two inputs of transformer T2 primary coils connect metal-oxide-semiconductor M1's respectively
Drain electrode and the negative electrode of TVS pipe Z2, in two output ends of transformer T2 secondary coils are connected respectively to diode D1's
The negative electrode of anode and diode D3, another output end are connected respectively to the negative electrode of the anode of diode D2 and diode D4,
Diode D1 is respectively connecting to one end, one end of resistance R1 and the controllable silicon THY1 of electric capacity C1 after being connected with diode D2 negative electrodes
Anode, be connected respectively to after the anode connection of diode D3 and diode D4 the other end of electric capacity C1, one end of electric capacity C2,
One end of one end, an input of isolation voltage sampling VSEN1 and load of resistance R2, the other end and resistance of resistance R1
One end connection of R3, the other end of resistance R3 are respectively connecting to an other input of isolation voltage sampling VSEN1, resistance R2
Other end and electric capacity C2 other end, the negative electrode of controllable silicon THY1 is respectively connecting to other end and the transformation for loading
One output end of device T1 secondary coils, the G doors of controllable silicon THY1 are connected to an other output end of transformer T1 secondary coils, electricity
The other end of resistance R5 is respectively connecting to an input of one end of resistance R6, one end of electric capacity C3 and transformer T1 primary coils
End, negative input end Vin- therein are respectively connecting to the source electrode of metal-oxide-semiconductor M3, one end of resistance R4, the other end of resistance R6, electricity
Hold the anode of the other end, the source electrode of metal-oxide-semiconductor M1 and M2 and TVS pipe Z1 and Z2 of C3, the gate pole of wherein metal-oxide-semiconductor M2 is connected to
One end of resistance R7, the gate pole of metal-oxide-semiconductor M1 are connected to one end of resistance R8, and the other end of resistance R7 is connected by drive circuit Q1
MCU is connected to, the other end of resistance R8 is connected to MCU by drive circuit Q2, and the other end of resistance R4 is respectively connecting to MCU
Sample with isolation voltage the output end of VSEN1, the gate pole of metal-oxide-semiconductor M3 is connected to MCU, and drain electrode is connected to transformer T1 primary coils
Another input.
An embodiment of the invention, wherein, inductance L1 can be 100uH, and input voltage is 300V, metal-oxide-semiconductor M1 and M2
Switching frequency is 70kHz, and resistance R5 is 200K Ω, and resistance R6 is 2K Ω, and electric capacity C3 is 0.1uF, and transformer T2 no-load voltage ratios are 1 to 1
Than 50.
An embodiment of the invention, there is provided a kind of method of work of drive circuit for laser, wherein as metal-oxide-semiconductor M1
When simultaneously turning on M2, inductance L1 energy storage, not to secondary output energy, M1 shut-offs, transformer T2 is by inductance L1 for transformer T2
Energy output to secondary, and M1 and M2 simultaneously turn on, L1 energy storage again, turns off M2, and transformer T2 is again to secondary output energy
Amount, so circulates.The voltage at two primary coil midpoints of transformer T2 can be higher than input voltage, then through the another of transformer T2
Level boosting obtains the voltage required for secondary.When voltage on electric capacity C1 slightly above loads required voltage, M1 and M2 is turned off,
No longer charge to electric capacity C1, electric capacity C1 is slowly discharged by resistance R1-R3, when reaching load required voltage, trigger controllable silicon
, to load discharge, when discharge current is zero, controllable silicon THY1 is voluntarily turned off for THY1, electric capacity C1, completes pulsatile once electric discharge.Then
M1 and M2 is then turned on, next pulse discharge process are carried out, is so circulated.
Description of the drawings
Accompanying drawing 1 is the drive circuit schematic diagram of the present invention;
Specific embodiment
The drive circuit for laser of the present invention will be described on the basis of accompanying drawing is combined in detail below, the laser instrument drives electricity
Road includes:Positive input terminal Vin+ and negative input end Vin-, wherein positive input terminal Vin+ connect the one of inductance L1 and resistance R5 respectively
End, the intermediate point of the other end connection transformer T2 primary coils of inductance L1, two inputs of transformer T2 primary coils
In one respectively connect metal-oxide-semiconductor M2 drain electrode and TVS pipe Z1 negative electrode, in two inputs of transformer T2 primary coils
Another connects the negative electrode of a drain electrode of metal-oxide-semiconductor M1 and TVS pipe Z2 respectively, in two output ends of transformer T2 secondary coils
An anode for being connected respectively to diode D1 and diode D3 negative electrode, another output end is connected respectively to diode
The negative electrode of the anode and diode D4 of D2, diode D1 be respectively connecting to after being connected with diode D2 negative electrodes electric capacity C1 one end,
Electric capacity is connected respectively to after the anode connection of one end of resistance R1 and the anode of controllable silicon THY1, diode D3 and diode D4
The other end of C1, one end of electric capacity C2, one end of resistance R2, an input of isolation voltage sampling VSEN1 and load
One end, the other end of resistance R1 are connected with one end of resistance R3, and the other end of resistance R3 is respectively connecting to isolation voltage and adopts
The other end of an other input, the other end of resistance R2 and electric capacity C2 of sample VSEN1, the negative electrode point of controllable silicon THY1
An output end of the other end and transformer T1 secondary coils of load, G doors connection best friend's pressure of controllable silicon THY1 are not connected to
An other output end of device T1 secondary coils, the other end of resistance R5 be respectively connecting to one end of resistance R6, the one of electric capacity C3
End and an input of transformer T1 primary coils, negative input end Vin- therein are respectively connecting to the source electrode of metal-oxide-semiconductor M3, electricity
Hinder one end, the other end of resistance R6, the other end of electric capacity C3, the source electrode of metal-oxide-semiconductor M1 and M2 and TVS pipe Z1 and the Z2 of R4
Anode, the gate pole of wherein metal-oxide-semiconductor M2 is connected to one end of resistance R7, and the gate pole of metal-oxide-semiconductor M1 is connected to one end of resistance R8, electricity
The other end of resistance R7 is connected to MCU by drive circuit Q1, and the other end of resistance R8 is connected to by drive circuit Q2
The other end of MCU, resistance R4 is respectively connecting to the output end of MCU and isolation voltage sampling VSEN1, and the gate pole of metal-oxide-semiconductor M3 connects
MCU is connected to, drain electrode is connected to another input of transformer T1 primary coils.
Wherein resistance R5, R6, C3 constitute input voltage sample circuit, when input voltage is too high, MCU block M1, M2's
Trigger pulse, realizes the protection to circuit, and metal-oxide-semiconductor M1, M2 realize contactor, completes voltage modulated, and resistance R7, R8 add volume
Outer drive circuit Q1 and Q2 constitutes M1, the drive circuit of M2, and L1 is energy storage inductor, and T2 is step-up transformer, and D1-D4 is secondary
Commutation diode, C1 are energy storage filter capacitor, and resistance R1-R4, electric capacity C2, isolation voltage sampling VSEN1 constitute output voltage and adopt
Sample circuit, meanwhile, resistance R1-R3 plays the role of to adjust C1 voltages, and controllable silicon THY1 is used to constitute switches of the C1 to load discharge,
Metal-oxide-semiconductor M3 and transformer T1 constitutes the drive circuit of controllable silicon THY1, and MCU is main control unit.
When metal-oxide-semiconductor M1 and M2 are simultaneously turned on, inductance L1 energy storage, transformer T2 to secondary output energy, M1 shut-offs, do not become
Energy output in inductance L1 is simultaneously turned on by depressor T2 to secondary, and M1 and M2, and L1 energy storage again turns off M2, transformer T2
Again to secondary output energy, so circulate.The voltage at two primary coil midpoints of transformer T2 can be higher than input voltage, then Jing
The first class boost again for crossing transformer T2 obtains the voltage required for secondary.Voltage on electric capacity C1 slightly above loads required electricity
During pressure, M1 and M2 is turned off, no longer charged to electric capacity C1, electric capacity C1 is slowly discharged by resistance R1-R3, reaches load required voltage
When, controllable silicon THY1 is triggered, to load discharge, when discharge current is zero, controllable silicon THY1 is voluntarily turned off electric capacity C1, is completed once
Pulsed discharge.Then M1 and M2 is then turned on, next pulse discharge process are carried out, is so circulated.
Simultaneously turned on by M1 and M2, then turn off one of them, this control mode is first once risen to input voltage
Pressure, makes the voltage of primary terminal higher than input voltage, then reaches required secondary voltage through transformer first class boost, and two
Secondary boost process reduces the turn ratio of transformer, reduces the design difficulty of transformer.And whole system has reliable and stable, work(
Consumption is low, many advantages, such as efficiency high.
In a specific embodiment, inductance L1 can be 100uH, and input voltage is 300V, and metal-oxide-semiconductor M1 and M2 switch is frequently
Rate is 70kHz, and resistance R5 is 200K Ω, and resistance R6 is 2K Ω, and electric capacity C3 is 0.1uF, and transformer T2 no-load voltage ratios compare 50 for 1 to 1.Its
The concrete output requirement of laser type and laser instrument that the parameter of his device can be driven as needed carries out reasonable selection, this
Art personnel according to the structure and operation logic and actual output requirement of the circuit diagram can simple computation draw, this
Place no longer describes in detail.
Claims (1)
1. a kind of method of work of drive circuit for laser, the drive circuit for laser, including:Positive input terminal Vin+ is defeated with negative
Enter and hold Vin-, wherein positive input terminal Vin+ connects one end of inductance L1 and resistance R5 respectively, the other end connection of inductance L1 becomes
The intermediate point of depressor T2 primary coils, in two inputs of transformer T2 primary coils connect metal-oxide-semiconductor M2's respectively
Drain electrode and the negative electrode of TVS pipe Z1, another in two inputs of transformer T2 primary coils connect metal-oxide-semiconductor M1's respectively
Drain electrode and the negative electrode of TVS pipe Z2, in two output ends of transformer T2 secondary coils are connected respectively to diode D1's
The negative electrode of anode and diode D3, another output end are connected respectively to the negative electrode of the anode of diode D2 and diode D4,
Diode D1 is respectively connecting to one end, one end of resistance R1 and the controllable silicon THY1 of electric capacity C1 after being connected with diode D2 negative electrodes
Anode, be connected respectively to after the anode connection of diode D3 and diode D4 the other end of electric capacity C1, one end of electric capacity C2,
One end of one end, an input of isolation voltage sampling VSEN1 and load of resistance R2, the other end and resistance of resistance R1
One end connection of R3, the other end of resistance R3 are respectively connecting to an other input of isolation voltage sampling VSEN1, resistance R2
Other end and electric capacity C2 other end, the negative electrode of controllable silicon THY1 is respectively connecting to other end and the transformation for loading
One output end of device T1 secondary coils, the G doors of controllable silicon THY1 are connected to an other output end of transformer T1 secondary coils, electricity
The other end of resistance R5 is respectively connecting to an input of one end of resistance R6, one end of electric capacity C3 and transformer T1 primary coils
End, negative input end Vin- therein are respectively connecting to the source electrode of metal-oxide-semiconductor M3, one end of resistance R4, the other end of resistance R6, electricity
Hold the anode of the other end, the source electrode of metal-oxide-semiconductor M1 and M2 and TVS pipe Z1 and Z2 of C3, the gate pole of wherein metal-oxide-semiconductor M2 is connected to
One end of resistance R7, the gate pole of metal-oxide-semiconductor M1 are connected to one end of resistance R8, and the other end of resistance R7 is connected by drive circuit Q1
MCU is connected to, the other end of resistance R8 is connected to MCU by drive circuit Q2, and the other end of resistance R4 is respectively connecting to MCU
Sample with isolation voltage the output end of VSEN1, the gate pole of metal-oxide-semiconductor M3 is connected to MCU, and drain electrode is connected to transformer T1 primary coils
Another input, when metal-oxide-semiconductor M1 and M2 are simultaneously turned on, inductance L1 energy storage, transformer T2 not to secondary output energy,
M1 is turned off, and the energy output in inductance L1 is simultaneously turned on by transformer T2 to secondary, and M1 and M2, and L1 energy storage again turns off M2,
Transformer T2 to secondary output energy, is so circulated again, and the voltage at two primary coil midpoints of transformer T2 can be higher than input
Voltage, then through the voltage that obtains required for secondary of first class boost again of transformer T2, the voltage on electric capacity C1 is slightly above loaded
During required voltage, M1 and M2 is turned off, charge no longer to electric capacity C1, electric capacity C1 is slowly discharged by resistance R1-R3, reached negative
When carrying required voltage, controllable silicon THY1 is triggered, to load discharge, when discharge current is zero, controllable silicon THY1 is voluntarily closed electric capacity C1
It is disconnected, pulsatile once electric discharge is completed, M1 and M2 is then then turned on, is carried out next pulse discharge process, so circulated.
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CN201410440614.1A CN104319610B (en) | 2014-08-27 | 2014-08-27 | A kind of drive circuit for laser |
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CN201410440614.1A CN104319610B (en) | 2014-08-27 | 2014-08-27 | A kind of drive circuit for laser |
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CN104319610B true CN104319610B (en) | 2017-04-05 |
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CN105680299B (en) * | 2016-04-01 | 2018-08-21 | 华北电力大学(保定) | A kind of soft switching inverting circuit laser driving circuit |
CN105742949B (en) * | 2016-04-01 | 2018-07-17 | 华北电力大学(保定) | A kind of driving circuit of high power laser |
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CN105743354B (en) * | 2016-04-20 | 2018-11-02 | 华北电力大学(保定) | A kind of single-ended reverse exciting circuit laser device driving circuit |
CN105958826B (en) * | 2016-04-20 | 2018-11-16 | 华北电力大学(保定) | A kind of full bridge soft switch circuit laser driving circuit |
CN106209255B (en) * | 2016-06-16 | 2018-09-07 | 青岛海信宽带多媒体技术有限公司 | Optical module and its laser bias circuit Poewr control method |
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US5734668A (en) * | 1992-10-07 | 1998-03-31 | Diomed Limited | Laser diode drive circuit |
US5739643A (en) * | 1994-09-30 | 1998-04-14 | Nec Corporation | Device for supplying electric power to flashlamp and method thereof |
CN203233324U (en) * | 2013-05-17 | 2013-10-09 | 武汉梅曼科技有限公司 | Pulse solid-state laser power supply with wide voltage output range |
CN204144664U (en) * | 2014-08-27 | 2015-02-04 | 华北电力大学(保定) | A kind of drive circuit for laser |
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2014
- 2014-08-27 CN CN201410440614.1A patent/CN104319610B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5734668A (en) * | 1992-10-07 | 1998-03-31 | Diomed Limited | Laser diode drive circuit |
US5739643A (en) * | 1994-09-30 | 1998-04-14 | Nec Corporation | Device for supplying electric power to flashlamp and method thereof |
CN203233324U (en) * | 2013-05-17 | 2013-10-09 | 武汉梅曼科技有限公司 | Pulse solid-state laser power supply with wide voltage output range |
CN204144664U (en) * | 2014-08-27 | 2015-02-04 | 华北电力大学(保定) | A kind of drive circuit for laser |
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