CN104868719B - Phase error controlled reversed polarity high-gain voltage boosting Boost conversion circuit - Google Patents
Phase error controlled reversed polarity high-gain voltage boosting Boost conversion circuit Download PDFInfo
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- CN104868719B CN104868719B CN201510280035.XA CN201510280035A CN104868719B CN 104868719 B CN104868719 B CN 104868719B CN 201510280035 A CN201510280035 A CN 201510280035A CN 104868719 B CN104868719 B CN 104868719B
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Abstract
The invention provides a phase error controlled reversed polarity high-gain voltage boosting Boost conversion circuit comprising a voltage boosting module, a polarity conversion module and a filtering output module which are interconnected. The voltage boosting module comprises a first switching tube, a second switching tube, a first inductor, a second inductor, a first diode, a first capacitor and a third diode. The polarity conversion module comprises the first capacitor, a second diode, the second switching tube and a fourth diode. The filtering output module comprises a second capacitor, a third capacitor, the second diode, the fourth diode, a third inductor and a load. Advantages of the phase error controlled reversed polarity high-gain voltage boosting Boost conversion circuit are that negative polarity output current/voltage can be provided to the load to realize 0-10 times of voltage fluctuation ratio, and output voltage is stable and harmonic output is low so that voltage gain is enhanced, a situation that a switching device works at the limit duty ratio can be avoided, and thus a problem of voltage gain adjustment limit of a conventional Boost circuit topology due to influence of parasitic parameters can be solved.
Description
Technical field：
The present invention relates to Power Electronic Circuit technical field, more particularly to a kind of low suitable for wide input power system
Cost, high-gain, efficient wrong facies-controlled reversed polarity high gain boost Boost translation circuits.
Background technology：
In order to improve the efficiency and reduces cost of Boost, under conditions of it need not force electrical isolation, it is non-every
From Boost due to eliminate heaviness high frequency transformer, reduce the number of times of transformation of electrical energy, with small volume, effect
Many advantages, such as rate height, low cost.But equivalent series resistance limits converter voltage gain in tradition Boost translation circuits
Raising, the maximum of voltage gain is about 3~5 times.When dutycycle D is excessive, the increase of inductive current ripple needs to use bigger
Inductance suppress current ripples, this further means that the further increase of inductance internal resistance, and the equivalent series resistance for reducing inductance is anticipated again
Taste design more volume, the inductance of higher costs.Traditional Boost translation circuits topology is affected by parasitic parameter, and electricity has been met with
The limit of pressure gain-adjusted.
The content of the invention：
The technical problem to be solved in the present invention be to provide it is a kind of not only can be supplied to load negative polarity output current/
Voltage, realizes 0~10 times of voltage up-down ratio, and output voltage stabilization, and harmonic wave is little, is improving the same of voltage gain
When, can also avoid switching device from working in limit dutycycle, solving traditional Boost circuit topology is affected by parasitic parameter and is met with
Meet the wrong facies-controlled reversed polarity high gain boost Boost translation circuits of voltage gain accommodation limit problem.
The technical solution of the present invention is to provide a kind of wrong facies-controlled reversed polarity high-gain liter with following structure
Pressure Boost translation circuits, boosting Boost translation circuits include boost module, reversal module and the filter being connected with each other
Ripple output module.
Wrong facies-controlled reversed polarity high gain boost Boost translation circuits of the present invention, wherein, boost module includes
First switch pipe, second switch pipe, the first inductance, the second inductance, the first diode, the first electric capacity and the 3rd diode, pole
Property conversion module include the first electric capacity, the second diode, the diodes of second switch Guan Yu tetra-, filtering output module include second
Electric capacity, the 3rd electric capacity, the second diode, the 4th diode, the 3rd inductance and load, the Same Name of Ends and DC source of the first inductance
Positive pole connection, the different name end of the first inductance and the Same Name of Ends of the second inductance be connected with the colelctor electrode of first switch pipe simultaneously, the
The different name end of two inductance is connected with the anode of the first diode, the positive pole of the negative electrode of the first diode and the first electric capacity simultaneously with
The colelctor electrode connection of second switch pipe, the negative pole of the negative pole of the first electric capacity, the anode of the 3rd diode and the second electric capacity simultaneously with
The negative pole of the negative electrode connection of the second diode, the anode of the second diode and the 3rd electric capacity is connected with one end of the 3rd inductance, the
The other end of three inductance and one end connection of output loading, the positive pole of the second electric capacity, the negative electrode of the 4th diode and output loading
The other end connection, the emitter stage of first switch pipe, the emitter stage of second switch pipe, the negative electrode of the 3rd diode, the four or two pole
The positive pole of the anode of pipe and the 3rd electric capacity is connected with the negative pole of power supply simultaneously.
After using above structure, compared with prior art, the beneficial effects of the present invention is：
(1) output current/voltage of load negative polarity can be supplied to；
(2) 0~10 times of voltage up-down ratio, and output voltage stabilization can be realized, harmonic wave is little；
(3) while improving voltage gain, it is to avoid switching device works in limit dutycycle, solves traditional Boost
Circuit topology is affected by parasitic parameter, meets with the problem of voltage gain accommodation limit.
Wrong facies-controlled reversed polarity high gain boost Boost translation circuits of the present invention, wherein, first switch pipe and
Second switch Guan Jun using PWM controls, 180 ° of the pwm pulse misphase of the pwm pulse of first switch pipe and the second switch pipe,
Control dutycycle D of first switch pipe is equal with control dutycycle D of second switch pipe.It is different from traditional Boost circuit module
, the present invention using dual switch misphase superposing control, carry out the first inductance L1With the 3rd inductance L2Two sections boosting, both
The voltage stress of switching tube is reduced, the bucking voltage output of higher gain can be obtained again.
Description of the drawings：
Fig. 1 is the functional-block diagram of wrong facies-controlled reversed polarity high gain boost Boost translation circuits；
Fig. 2 is wrong facies-controlled reversed polarity high gain boost Boost translation circuit structure charts；
Fig. 3 be circuit in Fig. 2 in the case where dutycycle D is less than 0.5, first switch pipe conducting, second switch pipe is closed
Operating diagram when disconnected；
Fig. 4 be circuit in Fig. 2 in the case where dutycycle D is less than 0.5, first switch pipe shut-off, second switch pipe is led
Operating diagram when logical；
Fig. 5 be circuit in Fig. 2 in the case where dutycycle D is less than 0.5, first switch pipe and second switch pipe are both off
When operating diagram；
Fig. 6 be circuit in Fig. 2 in the case where dutycycle D is more than 0.5, first switch pipe and second switch pipe are all turned on
When operating diagram；
Fig. 7 is the pwm control signal oscillogram of first switch pipe and second switch pipe；
Fig. 8 is circuit output voltage oscillogram corresponding with the pwm control signal of first switch pipe and second switch pipe.
Specific embodiment：
Facies-controlled reversed polarity high gain boost Boost conversion wrong to the present invention with reference to the accompanying drawings and detailed description
Circuit is described further：
As shown in figure 1, the wrong facies-controlled reversed polarity high gain boost Boost translation circuits of the present invention include what is be connected with each other
Boost module 1, reversal module 2 and filtering output module 3.As shown in Fig. 2 boost module 1 includes first switch pipe Q1、
Second switch pipe Q2, the first inductance L1, the second inductance L2, the first diode D1, the first electric capacity C1And the 3rd diode D3.Polarity
Conversion module 2 includes the first electric capacity C1, the second diode D2, second switch pipe Q2With the 4th diode D4.Filtering output module 3
Including the second electric capacity C2, the 3rd electric capacity C3, the second diode D2, the 4th diode D4, the 3rd inductance L3With load R.First inductance
L1Same Name of Ends and DC source EdPositive pole connection, the first inductance L1Different name end and the second inductance L2Same Name of Ends simultaneously with
First switch pipe Q1Colelctor electrode connection, the second inductance L2Different name end and the first diode D1Anode be connected, the one or two pole
Pipe D1Negative electrode and the first electric capacity C1Positive pole simultaneously with second switch pipe Q2Colelctor electrode connection, the first electric capacity C1Negative pole,
Three diode D3Anode and the second electric capacity C2Negative pole simultaneously with the second diode D2Negative electrode connection, the second diode D2's
Anode and the 3rd electric capacity C3Negative pole and the 3rd inductance L3One end connection, the 3rd inductance L3The other end and output loading R one
End connection, the second electric capacity C2Positive pole, the 4th diode D4Negative electrode be connected with the other end of output loading R, first switch pipe Q1
Emitter stage, second switch pipe Q2Emitter stage, the 3rd diode D3Negative electrode, the 4th diode D4Anode and the 3rd electric
Hold C3Positive pole simultaneously with power supply EdNegative pole connection.As shown in fig. 7, first switch pipe Q1With second switch pipe Q2Adopt PWM
Control, first switch pipe Q1Pwm pulse and the second switch pipe Q2180 ° of pwm pulse misphase, first switch pipe Q1Control
Dutycycle D processed and second switch pipe Q2Control dutycycle D it is equal.Fig. 8 is the wrong facies-controlled reversed polarity high-gain liter of the present invention
The oscillogram of pressure Boost translation circuit output voltages, wherein t is that PWM controls pulse period, UiFor input direct voltage, UoFor this
Invent the output voltage of the circuit.
Fig. 3~Fig. 6 is that the of the invention wrong facies-controlled reversed polarity high gain boost Boost translation circuits shown in Fig. 2 are being accounted for
It is empty to be less than 0.5 and more than the process chart in the case of 0.5 two kinds than D.
Wherein, Fig. 3 is that dutycycle D is less than in the case of 0.5, first switch pipe Q1Conducting, second switch pipe Q2During shut-off
Operating diagram, now the first diode D1With the 3rd diode D3Conducting, the first inductance L1Absorb electric energy, the second inductance L2Release
Electric discharge energy, the first electric capacity C1It is operated in charged state, the 3rd inductance L3Release energy through the second diode D2With the 3rd diode
D3Afterflow.
Fig. 4 is that dutycycle D is less than in the case of 0.5, first switch pipe Q1Shut-off, second switch pipe Q2Work during conducting
Schematic diagram.Now the 3rd diode D3Shut-off, the first inductance L1Release electric energy, the second inductance L2Absorb electric energy, the first electric capacity C1It is logical
Cross second switch pipe Q2It is operated in discharge condition, the 3rd inductance L3Absorb electric energy, the first electric capacity C1Discharge current flow through load electricity
Resistance R obtains reverse high-gain output voltage.
Fig. 5 is that dutycycle D is less than in the case of 0.5, first switch pipe Q1With second switch pipe Q2Work when being both off is shown
It is intended to.Now the 3rd diode D3Conducting, the first inductance L1With the second inductance L2Release electric energy the first electric capacity C1Charge, the 3rd is electric
Sense L3Release energy through the second diode D2With the 3rd diode D3Afterflow.
Fig. 6 is that dutycycle D is more than in the case of 0.5, first switch pipe Q1With second switch pipe Q2When in the case of all turning on
Operating diagram.Now the 3rd diode D3Cut-off, the first inductance L1Absorb electric energy, the first electric capacity C1Discharge current flows through load
Resistance R, the second inductance L2Now it is not involved in electricity exchange, the 3rd inductance L3Absorb electric energy.
Additionally, in the case where dutycycle D is more than 0.5, first switch pipe Q1Conducting, second switch pipe Q2Work during shut-off
Make state identical with work Fig. 3 Suo Shi；In the case that dutycycle D is more than 0.5, first switch pipe Q1Shut-off, second switch pipe Q2Lead
Working condition when logical is identical with work Fig. 4 Suo Shi.
Embodiments described above is only that the preferred embodiment of the present invention is described, not to the present invention's
Scope is defined, on the premise of without departing from design spirit of the present invention, technology of the those of ordinary skill in the art to the present invention
Various modifications and improvement that scheme is made, all should fall in the protection domain of claims of the present invention determination.
Claims (2)
1. a kind of wrong facies-controlled reversed polarity high gain boost Boost translation circuits, its spy is being：Boosting Boost is converted
Circuit includes boost module (1), reversal module (2) and filtering output module (3) being connected with each other, the boost module
(1) including first switch pipe (Q1), second switch pipe (Q2), the first inductance (L1), the second inductance (L2), the first diode (D1)、
First electric capacity (C1) and the 3rd diode (D3), the reversal module (2) is including the first electric capacity (C1), the second diode
(D2), second switch pipe (Q2) and the 4th diode (D4), filtering output module (3) is including the second electric capacity (C2), it is the 3rd electric
Hold (C3), the second diode (D2), the 4th diode (D4), the 3rd inductance (L3) and load (R), the first inductance (L1) it is same
Name end and DC source (Ed) positive pole connection, the first inductance (L1) different name end and the second inductance (L2) Same Name of Ends it is same
When with first switch pipe (Q1) colelctor electrode connection, the second inductance (L2) different name end and the first diode (D1) anode
It is connected, the first diode (D1) negative electrode and the first electric capacity (C1) positive pole simultaneously with second switch pipe (Q2) current collection
Pole connects, the first electric capacity (C1) negative pole, the 3rd diode (D3) anode and the second electric capacity (C2) negative pole simultaneously with the
Two diode (D2) negative electrode connection, the second diode (D2) anode and the 3rd electric capacity (C3) negative pole and the 3rd inductance
(L3) one end connection, the 3rd inductance (L3) the other end and output loading (R) one end connection, second electric capacity
(C2) positive pole, the 4th diode (D4) negative electrode be connected with the other end of output loading (R), the first switch pipe (Q1)
Emitter stage, second switch pipe (Q2) emitter stage, the 3rd diode (D3) negative electrode, the 4th diode (D4) anode and
Three electric capacity (C3) positive pole simultaneously with power supply (Ed) negative pole connection.
2. wrong facies-controlled reversed polarity high gain boost Boost translation circuits according to claim 1, it is characterised in that：
First switch pipe (the Q1) and second switch pipe (Q2) using PWM controls, the first switch pipe (Q1) pwm pulse with
Second switch pipe (the Q2) 180 ° of pwm pulse misphase, the first switch pipe (Q1) control dutycycle D and second switch
Pipe (Q2) control dutycycle D it is equal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510280035.XA CN104868719B (en) | 2015-05-27 | 2015-05-27 | Phase error controlled reversed polarity high-gain voltage boosting Boost conversion circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510280035.XA CN104868719B (en) | 2015-05-27 | 2015-05-27 | Phase error controlled reversed polarity high-gain voltage boosting Boost conversion circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104868719A CN104868719A (en) | 2015-08-26 |
| CN104868719B true CN104868719B (en) | 2017-05-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510280035.XA Active CN104868719B (en) | 2015-05-27 | 2015-05-27 | Phase error controlled reversed polarity high-gain voltage boosting Boost conversion circuit |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109861524B (en) * | 2018-12-17 | 2020-09-25 | 北京交通大学 | High-gain boost DC converter for fuel cell power generation |
| CN116388560B (en) * | 2023-06-01 | 2023-08-11 | 深圳市恒运昌真空技术有限公司 | High-gain bidirectional converter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102946194A (en) * | 2012-12-12 | 2013-02-27 | 重庆大学 | High-gain interleaving boost converter |
| CN103633842A (en) * | 2013-11-14 | 2014-03-12 | 华南理工大学 | Single-switch inverted output quadratic wide gain converter |
| US8737093B1 (en) * | 2010-08-02 | 2014-05-27 | Solarbridge Technologies, Inc. | Power converter with quasi-resonant voltage multiplier having shared switching node |
| CN103929058A (en) * | 2014-04-24 | 2014-07-16 | 安徽工业大学 | Two-phase interleaved converter based on coupled inductors |
-
2015
- 2015-05-27 CN CN201510280035.XA patent/CN104868719B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8737093B1 (en) * | 2010-08-02 | 2014-05-27 | Solarbridge Technologies, Inc. | Power converter with quasi-resonant voltage multiplier having shared switching node |
| CN102946194A (en) * | 2012-12-12 | 2013-02-27 | 重庆大学 | High-gain interleaving boost converter |
| CN103633842A (en) * | 2013-11-14 | 2014-03-12 | 华南理工大学 | Single-switch inverted output quadratic wide gain converter |
| CN103929058A (en) * | 2014-04-24 | 2014-07-16 | 安徽工业大学 | Two-phase interleaved converter based on coupled inductors |
Non-Patent Citations (1)
| Title |
|---|
| 一种交错控制高增益ZCT Boost变换器;罗全明 等;《中国电机工程学报》;20130425;第33卷(第12期);18-23 * |
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