CN105939107B - A kind of quasi- boost switching DC-DC converter of mixed type - Google Patents

A kind of quasi- boost switching DC-DC converter of mixed type Download PDF

Info

Publication number
CN105939107B
CN105939107B CN201610508637.0A CN201610508637A CN105939107B CN 105939107 B CN105939107 B CN 105939107B CN 201610508637 A CN201610508637 A CN 201610508637A CN 105939107 B CN105939107 B CN 105939107B
Authority
CN
China
Prior art keywords
diode
capacitance
inductance
oxide
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610508637.0A
Other languages
Chinese (zh)
Other versions
CN105939107A (en
Inventor
张波
朱小全
丘东元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuhua Electronic Co., Ltd.
Original Assignee
South China University of Technology SCUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China University of Technology SCUT filed Critical South China University of Technology SCUT
Priority to CN201610508637.0A priority Critical patent/CN105939107B/en
Publication of CN105939107A publication Critical patent/CN105939107A/en
Application granted granted Critical
Publication of CN105939107B publication Critical patent/CN105939107B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/1552—Boost converters exploiting the leakage inductance of a transformer or of an alternator as boost inductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The present invention provides a kind of quasi- boost switching DC DC converter circuits of mixed type, including voltage source, the quasi- Z source units in two ends being made of the first inductance, the first diode, the first capacitance, the second inductance and the second capacitance, the quasi- boost switching unit being made of the second capacitance, the second diode, the first metal-oxide-semiconductor, the first diode and the second inductance, the switching capacity unit being made of third capacitance and third diode, second metal-oxide-semiconductor, output diode, output filter capacitor and load.Circuit structure of the present invention is simple, combines the single-stage buck characteristic of quasi- Z source units and quasi- boost switching unit and switching capacity charges the characteristic of discharged in series parallel, realize the promotion of output voltage gain.

Description

A kind of quasi- boost switching DC-DC converter of mixed type
Technical field
The present invention relates to power electronic circuit technical fields, and in particular to a kind of combination switching capacity and quasi- Z source units The quasi- boost switching DC-DC converter circuit of mixed type high-gain.
Background technology
In fuel cell power generation, photovoltaic generation, due to single solar cell or single fuel cell provide it is straight Galvanic electricity pressure is relatively low, cannot be satisfied the power demand of existing electrical equipment, can not meet the needs of grid-connected, generally requiring will be multiple Battery is together in series the voltage for reaching required.On the one hand this method greatly reduces the reliability of whole system, on the other hand It also needs to solve the problems, such as series average-voltage.For this reason, it may be necessary to can be the high-gain DC-DC converter that low voltage transition is high voltage.Closely Several years Z source converters proposed and switching boost converter SBI are the DC-DC converters of high-gain, but in some low electricity It is hoped that there will be the occasion that higher voltage exports, traditional Z source converters and SBI converters just to become to be no longer able to meet to want for pressure input It asks.In order to expand the scope of application of traditional Z source converters and SBI converters, it is necessary to be improved by topology and expand its output electricity Press gain.
Invention content
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, a kind of combination switching capacity and the quasi- sources Z are provided The quasi- boost switching DC-DC converter circuit of mixed type high-gain of unit, specific technical solution are as follows.
A kind of quasi- boost switching DC-DC converter circuit of mixed type, including voltage source, quasi- Z source units, quasi- boost switching Unit, the second metal-oxide-semiconductor, switching capacity unit, output diode, output filter capacitor and load.The quasi- Z source units are by first Inductance, the first capacitance, the first diode, the second inductance and the second capacitance are constituted；The quasi- boost switching unit by the second inductance, First diode, the second capacitance, the first metal-oxide-semiconductor and the second diode are constituted；The switching capacity unit is by third capacitance and Three diodes are constituted.
In a kind of quasi- boost switching DC-DC converter circuit of above-mentioned mixed type, the anode of the voltage source is respectively with the One end of the cathode of two capacitances and the first inductance connects；The other end of first inductance respectively with the anode of the first diode and The cathode of first capacitance connects；Second capacitance anode respectively with the cathode of the second diode, the anode of output diode It is connected with the drain electrode of the first metal-oxide-semiconductor；The cathode of first diode source with one end of the second inductance and the first metal-oxide-semiconductor respectively Pole connects；The anode of first capacitance respectively with the anode of the second diode, the other end of the second inductance, the second metal-oxide-semiconductor The anode connection of drain electrode and third capacitance；The cathode of the output diode is positive and load with output filter capacitor respectively The other end connects；The cathode of the third capacitance respectively with the anode of third diode, the cathode of output filter capacitor and load The other end connection；The cathode of the voltage source is connect with the cathode of the source electrode of the second metal-oxide-semiconductor, third diode respectively.
When the first metal-oxide-semiconductor and the second metal-oxide-semiconductor simultaneously turn on, first diode, the second diode, third diode It is turned off, voltage source and first the first induction charging of capacitance pair；Voltage source and second the second induction charging of capacitance pair；Meanwhile electricity Potential source is together with third capacitance and the second capacitance to output filter capacitor and load supplying.When the first metal-oxide-semiconductor and the second metal-oxide-semiconductor are same When turning off, first diode, the second diode, third diode are both turned on, output diode shutdown.Second electricity Sense is in parallel with the first capacitance, forming circuit；First inductance and the second inductance are together to the second capacitor charging；The voltage Source, the first inductance and the second inductance give third capacitor charging；Meanwhile output filter capacitor powering load.
Compared with prior art, circuit of the present invention has the following advantages that and technique effect：The entire circuit structure letter of the present invention It is single, easy to control, output voltage gain higher；The single-stage of quasi- Z source units and quasi- boost switching unit is utilized in circuit of the present invention The charge parallel characteristic of discharged in series of buck characteristic and switching capacity realizes to further improve output voltage The expansion of quasi- switching boost converter output voltage gain.
Description of the drawings
Fig. 1 is the quasi- boost switching DC-DC converter circuit of a kind of mixed type in the specific embodiment of the invention.
Fig. 2 a, Fig. 2 b are a kind of switch of the mixed type high-gain quasi- of combination switching capacity and quasi- Z source units shown in Fig. 1 respectively Boost DC-DC converter circuit is in its first switch pipe S1With second switch pipe S2Simultaneously turn on and simultaneously turn off the equivalent of period Circuit diagram.
Fig. 3 a are gain curve and Boost, switching capacity Boost, the tradition sources Z of circuit of the present invention The gain curve of DC-DC converter and the novel quasi- sources Z DC-DC converter compares figure.
Fig. 3 b are the gain curve of circuit of the present invention and Boost, switching capacity Boost, biography in Fig. 3 a The gain curve of Z source DC-DC converters of uniting and the novel quasi- sources Z DC-DC converter is less than the comparison figure in 0.38 in duty ratio D.
Specific implementation mode
The above content is explained in detail technical scheme of the present invention, below in conjunction with attached drawing to the specific of the present invention Implementation is further described.
With reference to figure 1, a kind of quasi- boost switching DC-DC converter circuit of mixed type of the present invention, including voltage source, Quasi- Z source units, quasi- boost switching unit, the second metal-oxide-semiconductor, switching capacity unit, output diode, output filter capacitor and negative It carries.The quasi- Z source units are made of the first inductance, the first capacitance, the first diode, the second inductance and the second capacitance；The standard Boost switching unit is made of the second inductance, the first diode, the second capacitance, the first metal-oxide-semiconductor and the second diode；The switch Capacitor cell is made of third capacitance and third diode.
The specific connection type of circuit of the present invention is as follows：The anode of the voltage source respectively with the cathode of the second capacitance and the One end of one inductance connects；The other end of first inductance connects with the cathode of the anode of the first diode and the first capacitance respectively It connects；The positive drain electrode with the cathode of the second diode, the anode of output diode and the first metal-oxide-semiconductor respectively of second capacitance Connection；The cathode of first diode is connect with the source electrode of one end of the second inductance and the first metal-oxide-semiconductor respectively；First electricity Appearance anode respectively with the anode of the second diode, the other end of the second inductance, the drain electrode of the second metal-oxide-semiconductor and third capacitance just Pole connects；The cathode of the output diode is connect with the other end of the anode of output filter capacitor and load respectively；Described The cathode of three capacitances is connect with the other end of the anode of third diode, the cathode of output filter capacitor and load respectively；It is described The cathode of voltage source is connect with the cathode of the source electrode of the second metal-oxide-semiconductor, third diode respectively.
Fig. 2 a, Fig. 2 b give the process chart of circuit of the present invention.Fig. 2 a, Fig. 2 b corresponding are the first metal-oxide-semiconductors S1With the second metal-oxide-semiconductor S2Simultaneously turn on and simultaneously turn off the equivalent circuit diagram of period.Solid line indicates there is electric current stream in converter in figure The part crossed, dotted line indicate the part that no current flows through in converter.
The course of work of the present invention is as follows：
Stage 1, such as Fig. 2 a：First metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2It simultaneously turns on, at this time the first diode D1, the two or two Pole pipe D2, third diode D3It is turned off.Circuit forms three circuits, is respectively：Voltage source ViWith the first capacitance C1And third Capacitance C3Output filter capacitor C is given togetherfWith load RLCharging, forming circuit；Voltage source ViWith the first capacitance C1To the first inductance L1Carry out charging energy-storing, forming circuit；Voltage source ViWith the second capacitance C2To the second inductance L2Carry out charging energy-storing, forming circuit.
Stage 2, such as Fig. 2 b：First metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2It simultaneously turns off, at this time the first diode D1, the two or two Pole pipe D2, third diode D3It is both turned on, output diode DoShutdown.Circuit forms four circuits, is respectively：Voltage source Vi、 First inductance L1With the second inductance L2Give third capacitance C3Charging energy-storing, forming circuit；Second inductance L2To the first capacitance C1Charging, Forming circuit；First inductance L1With the second inductance L2To the second capacitance C2Charging energy-storing, forming circuit；Output filter capacitor CfIt gives Load RLPower supply, forming circuit.
To sum up situation, due to the first metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2Switch triggering pulse it is identical, if switching tube S1 And S2Duty ratio be D, switch periods Ts.And set VL1And VL2Respectively inductance L1And L2The voltage at both ends, VC1、VC2With VC3Respectively the first capacitance C1, the second capacitance C2With third capacitance C3Voltage, VS1For and VS2Respectively the first metal-oxide-semiconductor S1With Two metal-oxide-semiconductor S2Voltage between drain electrode and source electrode.In a switch periods TsInterior, it is V to enable output voltageo.When converter enters surely After state work, voltage relationship derivation below is obtained.
Operation mode 1：First metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2It simultaneously turns on, shown in corresponding equivalent circuit diagram 2a, therefore There is following formula：
VL1=Vi+VC1 (1)
VL2=Vi+VC2 (2)
VO=Vi+VC3+VC2 (3)
VS1=VS2=0 (4)
Metal-oxide-semiconductor S1And S2Turn-on time be DTs。
Operation mode 2：First metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2It is turned off, corresponding equivalent circuit is as shown in Figure 2 b, therefore There is following formula：
VL1=VC1-VC2 (5)
VL2=-VC1 (6)
Vi=VC3-VC2 (7)
VS2=VC3 (8)
VS1=VC1 (9)
Metal-oxide-semiconductor S1And S2Turn-off time be (1-D) Ts。
According to the above analysis, inductance Flux consumption conservation principle, simultaneous are used respectively to the first inductance L1 and the second inductance L2 Formula (1), formula (5), formula (2) and formula (6) can obtain：
D(Vi+VC1)+(1-D)(VC1-VC2)=0 (10)
D(Vi+VC2)-(1-D)VC1=0 (11)
Thus, it can obtain the first capacitance C1Voltage VC1With the second capacitance C2Voltage VC2Voltage and voltage source ViBetween Relational expression is：
Third capacitance C can be obtained by formula (7), formula (12) and formula (13)3Voltage VC3With voltage source ViBetween relationship Formula is：
Then by formula (3), formula (13) and formula (14), the gain factor expression formula that can obtain circuit of the present invention is：
It is as shown in Figure 3a the gain curve of circuit of the present invention and Boost, switching capacity Boost, biography The gain curve of system Z source DC-DC converters and the novel quasi- sources Z DC-DC converter compares figure；Fig. 3 b are circuit of the present invention in Fig. 3 a Gain curve and Boost, switching capacity Boost, the tradition sources Z DC-DC converter and the novel quasi- sources Z DC- The gain curve of DC converters is less than the comparison figure in 0.38 in duty ratio D, and figure includes the gain curve of circuit of the present invention, passes The gain curve for the sources Z DC-DC converter of uniting, the gain curve of the novel quasi- sources Z DC-DC converter, switching capacity Boost Gain curve, the gain curve of Boost.As seen from the figure, circuit of the present invention is the case where duty ratio D is no more than 0.38 Under, gain G can reach very big, and the duty ratio D of circuit of the present invention does not exceed 0.38.Therefore, in contrast, of the invention The gain of circuit is very high.
In conclusion circuit overall structure of the present invention is simple, and it is easy to control, combine quasi- Z source units and quasi- boost switching The single-stage buck characteristic and switching capacity of unit charge the characteristic of discharged in series parallel, realize output voltage gain into One step is promoted, and there is no the dash currents that inrush current and metal-oxide-semiconductor open moment.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the embodiment Limitation, it is other it is any without departing from the spirit and principles of the present invention made by changes, modifications, substitutions, combinations, simplifications, Equivalent substitute mode is should be, is included within the scope of the present invention.

Claims (2)

1. a kind of quasi- boost switching DC-DC converter circuit of mixed type, it is characterised in that including voltage source（Vi）, quasi- Z source units, Quasi- boost switching unit, the second metal-oxide-semiconductor（S2）, switching capacity unit, output diode（Do）, output filter capacitor（Cf）With it is negative It carries（RL）；The quasi- Z source units are by the first inductance（L1）, the first capacitance（C1）, the first diode（D1）, the second inductance（L2）With Two capacitances（C2）It constitutes；The quasi- boost switching unit is by the second inductance（L2）, the first diode（D1）, the second capacitance（C2）, One metal-oxide-semiconductor（S1）With the second diode（D2）It constitutes；The switching capacity unit is by third capacitance（C3）With third diode（D3） It constitutes；The voltage source（Vi）Anode respectively with the second capacitance（C2）Cathode and the first inductance（L1）One end connection；It is described First inductance（L1）The other end respectively with the first diode（D1）Anode and the first capacitance（C1）Cathode connection；Described Two capacitances（C2）Anode respectively with the second diode（D2）Cathode, output diode（Do）Anode and the first metal-oxide-semiconductor（S1） Drain electrode connection；First diode（D1）Cathode respectively with the second inductance（L2）One end and the first metal-oxide-semiconductor（S1）Source Pole connects；First capacitance（C1）Anode respectively with the second diode（D2）Anode, the second inductance（L2）The other end, Second metal-oxide-semiconductor（S2）Drain electrode and third capacitance（C3）Anode connection；The output diode（Do）Cathode respectively with output Filter capacitor（Cf）Anode and load（RL）The other end connection；The third capacitance（C3）Cathode respectively with the three or two pole Pipe（D3）Anode, output filter capacitor（Cf）Cathode and load（RL）The other end connection；The voltage source（Vi）Cathode Respectively with the second metal-oxide-semiconductor（S2）Source electrode, third diode（D3）Cathode connection.
2. the quasi- boost switching DC-DC converter circuit of a kind of mixed type according to claim 1, it is characterised in that when first Metal-oxide-semiconductor（S1）With the second metal-oxide-semiconductor（S2）When simultaneously turning on, first diode（D1）, the second diode（D2）, the three or two pole Pipe（D3）It is turned off, voltage source（Vi）With the first capacitance（C1）To the first inductance（L1）Charging；Voltage source（Vi）With the second capacitance （C2）To the second inductance（L2）Charging；Meanwhile voltage source（Vi）With third capacitance（C3）With the second capacitance（C2）Output is filtered together Wave capacitance（Cf）And load（RL）Power supply；When the first metal-oxide-semiconductor（S1）With the second metal-oxide-semiconductor（S2）When simultaneously turning off, the one or two pole Pipe（D1）, the second diode（D2）, third diode（D3）It is both turned on, output diode（Do）Shutdown；Second inductance（L2） With the first capacitance（C1）Parallel connection, forming circuit；First inductance（L1）With the second inductance（L2）Together to the second capacitance（C2）It fills Electricity；The voltage source（Vi）, the first inductance（L1）With the second inductance（L2）Give third capacitance（C3）Charging；Meanwhile exporting filtered electrical Hold（Cf）To load（RL）Power supply.
CN201610508637.0A 2016-06-30 2016-06-30 A kind of quasi- boost switching DC-DC converter of mixed type Active CN105939107B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610508637.0A CN105939107B (en) 2016-06-30 2016-06-30 A kind of quasi- boost switching DC-DC converter of mixed type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610508637.0A CN105939107B (en) 2016-06-30 2016-06-30 A kind of quasi- boost switching DC-DC converter of mixed type

Publications (2)

Publication Number Publication Date
CN105939107A CN105939107A (en) 2016-09-14
CN105939107B true CN105939107B (en) 2018-09-14

Family

ID=56873438

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610508637.0A Active CN105939107B (en) 2016-06-30 2016-06-30 A kind of quasi- boost switching DC-DC converter of mixed type

Country Status (1)

Country Link
CN (1) CN105939107B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018074683A (en) * 2016-10-26 2018-05-10 株式会社オートネットワーク技術研究所 DCDC converter
CN106849643A (en) * 2017-01-26 2017-06-13 华南理工大学 A kind of switching capacity type mixes quasi- Z source converters
CN107134942A (en) * 2017-06-16 2017-09-05 华南理工大学 A kind of quasi- Z-source inverter of active switch capacitor
CN108809087B (en) * 2018-06-04 2019-10-18 华南理工大学 The quasi- source the Z DC-DC converter of active switch capacitor and passive switch inductance mixed
CN108768171A (en) * 2018-06-12 2018-11-06 天津大学 The quasi- wide gain two-way DC converter of the sources Z-switching capacity of switch for electric vehicle
CN111211687B (en) * 2020-01-15 2021-11-30 广东工业大学 Hourglass-shaped impedance network boost converter and switching power supply

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105490536A (en) * 2015-12-27 2016-04-13 华南理工大学 High-gain voltage-lifting quasi Z source converter
CN105529925B (en) * 2016-02-01 2019-04-09 浙江艾罗网络能源技术有限公司 Boost based on switched inductors
CN205847090U (en) * 2016-06-30 2016-12-28 华南理工大学 A kind of mixed type quasi-boost switching DC DC changer

Also Published As

Publication number Publication date
CN105939107A (en) 2016-09-14

Similar Documents

Publication Publication Date Title
CN105939107B (en) A kind of quasi- boost switching DC-DC converter of mixed type
CN105958823B (en) A kind of quasi- Z source converter circuit of electric current continuous type high-gain boost switching
CN105939112B (en) A kind of quasi- boost switching DC-DC converter of high-gain
CN105939108B (en) A kind of quasi- boost switching DC-DC converter of switched inductors type
CN206698111U (en) It is a kind of using switched inductors and the quasi- boost switching DC DC converters of switching capacity
CN106712503A (en) Quasi-switch boost DC-DC converter employing switching inductor and switching capacitor
CN105978322B (en) A kind of quasi- sources Z DC-DC converter of switching capacity type high-gain
CN203911753U (en) Zero-voltage switch-off interleaved parallel DC/DC converter
CN207368879U (en) A kind of quasi- boost switching DC/DC converters of the high-gain of low voltage stress
CN205847090U (en) A kind of mixed type quasi-boost switching DC DC changer
CN110034681A (en) A kind of crisscross parallel ZVZCS high boosting DC/DC converter
CN106787900B (en) Boosting gird-connected inverter and its control method
CN205847086U (en) A kind of switching capacity type high-gain quasi-Z source DC DC changer
CN205847091U (en) A kind of switched inductors type quasi-boost switching DC DC changer
CN106787728A (en) A kind of quasi- boost switching DC DC converters of switching capacity type
CN106787692A (en) A kind of quasi- Z source converters of type switching capacity altogether
TWI451678B (en) A voltage-boosting device and a voltage-boosting circuit
CN205847087U (en) A kind of high-gain quasi-boost switching DC DC changer
CN103762841B (en) A kind of embedded single switch Buck-Boost converter
CN209748408U (en) power supply boosting device based on multi-stage energy storage unit series connection
CN103269160A (en) Three-state direct current-direct current converter and control method thereof
CN103633833B (en) Single-switching-tube converter Boost-Buck-Boost converter
CN207612198U (en) A kind of quasi- boost switching DC-DC converter of switching capacity type
CN102570796B (en) Multi-path output boosting converter
CN206712678U (en) A kind of multi input parallel power converter

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20190808

Address after: 523320 Xianglong Road, Huangzhou, New District, Shilong Town, Dongguan City, Guangdong Province

Patentee after: Fuhua Electronic Co., Ltd.

Address before: 510640 Tianhe District, Guangdong, No. five road, No. 381,

Patentee before: South China University of Technology

TR01 Transfer of patent right