CN205249075U - Resistant electromagnetic radiation's transistor self excited inverter - Google Patents
Resistant electromagnetic radiation's transistor self excited inverter Download PDFInfo
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- CN205249075U CN205249075U CN201520863138.4U CN201520863138U CN205249075U CN 205249075 U CN205249075 U CN 205249075U CN 201520863138 U CN201520863138 U CN 201520863138U CN 205249075 U CN205249075 U CN 205249075U
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Abstract
The utility model discloses a resistant electromagnetic radiation's transistor self excited inverter aims at supplying a space to occupy dc -to -ac converter little, that electromagnetic interference is little, life is high, the utility model discloses a following technical scheme realizes: in the RCC circuit to the combination switch darlington transistor adopts sampling resistor to take a sample to the electric current as the switching element, carries out the peak current protection, and wherein, combination switch darlington pipe is constituteed to transistor Q2 projecting pole series connection darlington pipe Q1 base, darlington pipe Q1 projecting pole is through sampling resistor R14 and the collecting electrode that triggers the parallelly connected transistor Q4 of electric capacity C3, sampling resistor R14 one end electric connection power supply negative pole and power negative pole and the transistor array Q5 pin potentiometre R15 between 10, and the resistance R8 that the series connection of diode D2 is passed through to one end connects in transistor array Q5, through regulator potentiometer R15's resistance, change transistor array Q5's 10 magnitude of voltages of pin, and then change transistor array Q5 pin 9 voltage regulation threshold values and change the protective current peak value on the sampling resistor.
Description
Technical field
The utility model relates to a kind of transistor self excited inverter of the resistance to electromagnetic radiation that is mainly used in aero-engine igniter.
Background technology
The most parts of high temperature resistant inverter as igniter that adopt of aero-engine igniter. The environment temperature of aero-engine igniter work is higher, in the situation that aircraft DC is powered, in the invertor operation process adopting, play the mechanical vibrator parts of switching over effect, take up room large, when work, can produce very strong electromagnetic interference, and oscillator component in inverter is in the time of oscillatory work, the disconnection of its contact and the closed arcing phenomenon that produces, produce the ablation of strong electromagnetic and contact, affected the life-span of igniter. In the prior art, the transistor self excited inverter of resistance to electromagnetic radiation adopts circuit simple conventionally, do not need control circuit just DC voltage can be become to pulsed dc voltage automatically, only with 4 high power transistors and a transistor self excited inverter that transformer forms. For can normal starting of oscillation after circuit is switched on power, self-excitation inverter transistor must be provided with pre-biased circuit, and the neglecting greatly transistorized characteristic and load of biasing and becoming, to having relatively high expectations of circuit elements device.
No matter the most of Switching Power Supplies that adopt at present, be auto-excitation type or independent-excited, and its circuit is all the mu balanced circuit by the control of PWM system. In this type of Switching Power Supply, switching tube is periodic on/off always, and PWM system just changes the pulse width in each cycle. The control of PWM system is continuous control. Aperiodicity Switching Power Supply is different, and its pulse control procedure is not that LINEAR CONTINUOUS changes, and only has two states: in the time of switch power source output voltage overrate, and impulse controller output low level, switching tube cut-off; When switch power source output voltage is during lower than rated value, impulse controller output high level, switching tube conducting. In the time that load current reduces, filter capacitor discharge time extends, and the output voltage prompt drop of can not determining is low, and switching tube is in cut-off state, until output voltage is reduced to below rated value, switching tube is conducting again. Depend on the size of load current the deadline of switching tube. The conduction and cut-off of switching tube is controlled from output voltage sampling by level switch, and therefore this aperiodicity Switching Power Supply is extremely applicable to discontinuity load or changes larger load supplying. The aperiodicity Switching Power Supply at initial stage all adopts independent-excited circuit structure, forms voltage comparator by operational amplifier, and the sampling voltage of output is become to control level, controls the output pulse of independent-excited oscillator. Comparator output high level in the time that output voltage maintains rated voltage, oscillator turn-offs output pulse, makes switching tube cut-off. In the time that output voltage reduces, comparator output low level, oscillator output pulse, makes switching tube conducting. After aperiodicity Switching Power Supply is entered people's household electrical appliance, in order to simplify circuit, great majority adopt self-oscillation mode, directly adopt voltage-stabiliser tube as level switch. Because its control procedure is the time ratio of oscillatory regime and holddown (or claiming blocked state), be therefore called vibration and suppress code converter (RINGINGCHOKECONVERTER is called for short RCC type switching regulator). RCC converter typically refers to auto-oscillation type anti exciting converter. The efficient circuits that it just can be made up of less several devices.
Utility model content
The purpose of this utility model is for taking up room greatly of existing in prior art, strong and the fast weak point of contact ablation of electromagnetic interference, provide that a kind of space hold is little, electromagnetic interference is little, the transistor self excited inverter of the resistance to electromagnetic radiation of high life, to solve the above-mentioned problems in the prior art.
The utility model solves the technical scheme that its technical problem adopts: a kind of transistor self excited inverter of resistance to electromagnetic radiation, it is characterized in that: in RCC circuit, using stacked switch Darlington transistor as switching device, adopt sample resistance to sample electric current, carry out peak point current protection, wherein, transistor Q2 emitter stage series connection Darlington transistor Q1 base stage composition stacked switch Darlington transistor; Darlington transistor Q1 emitter stage is by the colelctor electrode of sample resistance R14 and triggering capacitor C 3 parallel transistor Q4, potentiometer R15 between sample resistance R14 one end electric connection of power supply negative pole and power cathode and transistor array Q5 pin 10, the resistance R 8 of connecting by diode D2 in one end is connected in transistor array Q5, armature winding L1 one end of step-up transformer T1 connects diode D9, and the other end connects the also interface of transistor Q2 and Darlington transistor Q1 colelctor electrode; The also interface of feedback winding L 2 one end contact resistance R1 of step-up transformer T1 and series diode D6 and resistance R 13, the other end is by the base stage contact resistance R3 of transistor Q3 and the colelctor electrode of transistor Q3 electrical connection resistance R 9 and diode D7 interface, and the base stage of transistor Q3 is by diode D1 parallel resistance R2; Secondary windings L3 one end is connected energy-storage capacitor C4 composition shunt circuit by commutation diode D10 with the other end; By the resistance of regulator potentiometer R15, change transistor array Q5 pin 10 magnitudes of voltage, and then change the pin 9 voltages adjustment threshold values of transistor array Q5 and change the protective current peak value on sample resistance, further stable output.
The utility model has following beneficial effect than prior art.
Space hold is little. The utility model adopts Darlington transistor as switching device, has cancelled mechanical contact, and frequency of oscillation is brought up to 5kHz by about 700Hz, has reduced the volume of step-up transformer. This circuit is worked under high frequency state, not only can make the volume of transformer reduce, but also improve electromagnetic interference. Adopt Darlington transistor as switching device, there is higher current amplification factor (being greater than 5000), avoided the saturated of switching device, improved product service life and electromagnetic compatibility effect. Adopt sample resistance to sample electric current, carry out peak point current protection, frequency of oscillation and the waveform of this inverter circuit are determined by oscillator stage, are not substantially subject to the impact of load variations and mains fluctuations, and output voltage is more stable.
Electromagnetic interference is little, high life. The utility model switching device adopts transistor and Darlington transistor to form the combination Darlington transistor of high current amplification factor, makes switch be operated in zone of saturation always, has improved base stage saturation conduction voltage simultaneously. Adopt sample resistance to sample electric current, carry out peak point current protection, provide high the power output of igniter under low input condition. Than existing machinery oscillator inversion transformation technique, owing to there is no mechanical vibrator contact, can have an appointment 30% lifting of life-span, thereby the electromagnetic radiation of having avoided the arcing of mechanical contact electric current to produce.
Brief description of the drawings
Further illustrate the utility model below in conjunction with drawings and Examples, but therefore the utility model is not limited among described scope of embodiments.
Fig. 1 is the circuit diagram of the transistor self excited inverter of the resistance to electromagnetic radiation of the utility model.
Detailed description of the invention
Consult Fig. 1. In embodiment described below, the transistor self excited inverter of resistance to electromagnetic radiation adopts RCC circuit, and switching device transistor adopts Darlington transistor, and the current peak that switch turn-offs on former reason sample resistance determines. The transistor self excited inverter of this resistance to electromagnetic radiation is mainly made up of step-up transformer, Darlington transistor, transistor array, diode, sample resistance and triggering electric capacity. Wherein, transistor Q2 and Darlington transistor Q1 composition stacked switch Darlington transistor; Step-up transformer adopts three winding constructions that comprise armature winding, feedback stage winding and secondary windings. Energy storage inductor when armature winding is the elementary conducting of inverter; When secondary windings is elementary shutoff, there is electric current to charge to storage capacitor through rectifying device; Feedback stage winding is inductive secondary voltage in the time of elementary shutoff, provides negative pressure for be made up of the shutoff of stacked switch Darlington transistor transistor Q2 and Darlington transistor Q1, maintains elementary shutoff.
In RCC circuit, using stacked switch Darlington transistor as switching device, adopt sample resistance to sample electric current, carry out peak point current protection, wherein, transistor Q2 emitter stage series connection Darlington transistor Q1 base stage composition stacked switch Darlington transistor; Darlington transistor Q1 emitter stage is by the colelctor electrode of sample resistance R14 and triggering capacitor C 3 parallel transistor Q4, potentiometer R15 between sample resistance R14 one end electric connection of power supply negative pole and power cathode and transistor array Q5 pin 10, the resistance R 8 of connecting by diode D2 in one end is connected in transistor array Q5, armature winding L1 one end of step-up transformer T1 connects diode D9, and the other end connects the also interface of transistor Q2 and Darlington transistor Q1 colelctor electrode; The also interface of feedback winding L 2 one end contact resistance R1 of step-up transformer T1 and series diode D6 and resistance R 13, the other end is by the base stage contact resistance R3 of transistor Q3 and the colelctor electrode of transistor Q3 electrical connection resistance R 9 and diode D7 interface, and the base stage of transistor Q3 is by diode D1 parallel resistance R2; Secondary windings L3 one end is connected energy-storage capacitor C4 composition shunt circuit by commutation diode D10 with the other end; by the resistance of regulator potentiometer R15; change transistor array Q5 pin 10 magnitudes of voltage; and then change transistor array Q5 pin 9 voltages are adjusted threshold values; and then protective current peak value on change sample resistance, further stable output. Each pin of transistor array Q5 is connected with resistance R 11, resistance R 6, potentiometer R15, resistance R 8, resistance R 5, transistor Q4, diode D8, resistance R 10 and the resistance R 12 of resistance R 4, diode D3 series connection respectively. Wherein, resistance R 11 is by the pin 12 series diode D3 of transistor array Q5, and resistance R 11 and diode D3 are connected between the pin 14 and pin 11 of transistor array Q5, and in parallel with resistance R 6. Resistance R 4 one end parallel resistance R7 and resistance R 3, one end is parallel between resistance R 5 and diode D8. Potentiometer R15 one end electric connection of power supply negative pole, and in parallel with transistor array Q5 pin 6. Transistor array Q5 pin 6,7 is in parallel by series resistance R5, diode D8, resistance R 12 electric connection of power supply negative poles. Transistor array Q5 pin 4 is electrically connected transistor Q4 colelctor electrode, transistor Q4 by resistance R 10 and power cathode through series capacitance C2 electric connection of power supply positive pole. Resistance R 3 is by resistance R 9 and the contact of diode D7 and the contact series diode D1 of transistor Q3 base stage, diode, 1 is connected in parallel between transistor Q3 colelctor electrode and resistance R 2, and resistance R 2 outputs are connected electrically between step-up transformer T1 feedback stage winding L 2 and resistance R 1, resistance R 13 interface.
Operation principle of the present utility model is: low-voltage dc power supply charges to triggering capacitor C 3 through diode D9, resistance R 3, step-up transformer T1 feedback stage winding L 2 and resistance R 13; In the time that the voltage of triggering capacitor C 3 reaches the base saturation voltage of stacked switch Darlington transistor of transistor Q2 and Darlington transistor Q1 composition, stacked switch Darlington transistor saturation conduction; By linear the increasing of electric current of stacked switch Darlington transistor and sample resistance R14; When voltage on resistance R 14, resistance R 8 and diode D2 rises to setting value, the 3 pin output high level of transistor array Q5 make transistor Q4 saturation conduction, and the electric energy triggering in capacitor C 3 is released to the full pressure drop of transistor Q4 through transistor Q4, turn-offs Q1; Electric current in step-up transformer armature winding T1 is converted to step-up transformer secondary windings through iron core, and the electric current of step-up transformer secondary windings charges to energy-storage capacitor through diode D10; In the time that the electric current of secondary windings drops to zero, the voltage direction of the each winding of step-up transformer T1 changes, and restarts the inversion work of a new round under the driving of supply voltage.
Claims (10)
1. the transistor self excited inverter of a resistance to electromagnetic radiation, it is characterized in that: in RCC circuit, using stacked switch Darlington transistor as switching device, adopt sample resistance to sample electric current, carry out peak point current protection, wherein, transistor Q2 emitter stage series connection Darlington transistor Q1 base stage composition stacked switch Darlington transistor; Darlington transistor Q1 emitter stage is by the colelctor electrode of sample resistance R14 and triggering capacitor C 3 parallel transistor Q4, potentiometer R15 between sample resistance R14 one end electric connection of power supply negative pole and power cathode and transistor array Q5 pin 10, the resistance R 8 of connecting by diode D2 in one end is connected in transistor array Q5, armature winding L1 one end of step-up transformer T1 connects diode D9, and the other end connects the also interface of transistor Q2 and Darlington transistor Q1 colelctor electrode; The also interface of feedback winding L 2 one end contact resistance R1 of step-up transformer T1 and series diode D6 and resistance R 13, the other end is by the base stage contact resistance R3 of transistor Q3 and the colelctor electrode of transistor Q3 electrical connection resistance R 9 and diode D7 interface, and the base stage of transistor Q3 is by diode D1 parallel resistance R2; Secondary windings L3 one end is connected energy-storage capacitor C4 composition shunt circuit by commutation diode D10 with the other end; By the resistance of regulator potentiometer R15, change pin 10 magnitudes of voltage of transistor array Q5, and then change the pin 9 voltages adjustment threshold values of transistor array Q5 and change the protective current peak value on sample resistance, further stable output.
2. the transistor self excited inverter of resistance to electromagnetic radiation as claimed in claim 1, is characterized in that: each pin of transistor array Q5 is connected with resistance R 4, resistance R 11, resistance R 6, potentiometer R15, resistance R 8, resistance R 5, transistor Q4, diode D8, resistance R 10 and the resistance R 12 of diode D3 series connection respectively.
3. the transistor self excited inverter of resistance to electromagnetic radiation as claimed in claim 1, is characterized in that: step-up transformer adopts three winding constructions that comprise armature winding, feedback stage winding and secondary windings.
4. the transistor self excited inverter of resistance to electromagnetic radiation as claimed in claim 3, is characterized in that: energy storage inductor when armature winding is the elementary conducting of inverter; When secondary windings is elementary shutoff, electric current charges to storage capacitor through rectifying device; Feedback stage winding is inductive secondary voltage in the time of elementary shutoff, provides negative pressure for be made up of the shutoff of stacked switch Darlington transistor transistor Q2 and Darlington transistor Q1, maintains elementary shutoff.
5. the transistor self excited inverter of resistance to electromagnetic radiation as claimed in claim 1, is characterized in that: low-voltage dc power supply charges to triggering capacitor C 3 through diode D9, resistance R 3, step-up transformer T1 feedback stage winding L 2 and resistance R 13.
6. the transistor self excited inverter of resistance to electromagnetic radiation as claimed in claim 5, it is characterized in that: in the time that the voltage of triggering capacitor C 3 reaches the base saturation voltage of stacked switch Darlington transistor of transistor Q2 and Darlington transistor Q1 composition, stacked switch Darlington transistor saturation conduction; By linear the increasing of electric current of stacked switch Darlington transistor and sample resistance R14.
7. the transistor self excited inverter of resistance to electromagnetic radiation as claimed in claim 6, it is characterized in that: when the voltage on resistance R 14, resistance R 8 and diode D2 rises to setting value, the 3 pin output high level of transistor array Q5 make transistor Q4 saturation conduction, the electric energy triggering in capacitor C 3 is released to the full pressure drop of transistor Q4 through transistor Q4, turn-offs Q1; Electric current in step-up transformer armature winding T1 is converted to step-up transformer secondary windings through iron core, and the electric current of step-up transformer secondary windings charges to energy-storage capacitor through diode D10; In the time that the electric current of secondary windings drops to zero, the voltage direction of the each winding of step-up transformer T1 changes, and restarts the inversion work of a new round under the driving of supply voltage.
8. the transistor self excited inverter of resistance to electromagnetic radiation as claimed in claim 1, it is characterized in that: resistance R 11 is by the pin 12 series diode D3 of transistor array Q5, resistance R 11 and diode D3 are connected between the pin 14 and pin 11 of transistor array Q5, and in parallel with resistance R 6.
9. the transistor self excited inverter of resistance to electromagnetic radiation as claimed in claim 1, is characterized in that: resistance R 4 one end parallel resistance R7 and resistance R 3, and one end is parallel between resistance R 5 and diode D8; Potentiometer R15 one end electric connection of power supply negative pole, and in parallel with transistor array Q5 pin 6; Transistor array Q5 pin 6,7 is in parallel by series resistance R5, diode D8, resistance R 12 electric connection of power supply negative poles.
10. the transistor self excited inverter of resistance to electromagnetic radiation as claimed in claim 1, is characterized in that: transistor array Q5 pin 4 is electrically connected transistor Q4 colelctor electrode, transistor Q4 by resistance R 10 and power cathode through series capacitance C2 electric connection of power supply positive pole; Resistance R 3 is by resistance R 9 and the contact of diode D7 and the contact series diode D1 of transistor Q3 base stage, diode D1 is connected in parallel between transistor Q3 colelctor electrode and resistance R 2, and resistance R 2 outputs are connected electrically between step-up transformer T1 feedback stage winding L 2 and resistance R 1, resistance R 13 interface.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520863138.4U CN205249075U (en) | 2015-11-01 | 2015-11-01 | Resistant electromagnetic radiation's transistor self excited inverter |
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| CN201520863138.4U CN205249075U (en) | 2015-11-01 | 2015-11-01 | Resistant electromagnetic radiation's transistor self excited inverter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105450074A (en) * | 2015-11-01 | 2016-03-30 | 四川泛华航空仪表电器有限公司 | Self-excited transistor inverter |
| CN109765474A (en) * | 2019-01-25 | 2019-05-17 | 无锡固电半导体股份有限公司 | A kind of test method of Darlington transistor parameter |
-
2015
- 2015-11-01 CN CN201520863138.4U patent/CN205249075U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105450074A (en) * | 2015-11-01 | 2016-03-30 | 四川泛华航空仪表电器有限公司 | Self-excited transistor inverter |
| CN105450074B (en) * | 2015-11-01 | 2019-05-28 | 四川泛华航空仪表电器有限公司 | Auto-excitation type transistor inverter |
| CN109765474A (en) * | 2019-01-25 | 2019-05-17 | 无锡固电半导体股份有限公司 | A kind of test method of Darlington transistor parameter |
| CN109765474B (en) * | 2019-01-25 | 2021-03-05 | 无锡固电半导体股份有限公司 | Method for testing parameters of Darlington transistor |
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