CN100384071C - Input stage circuit of three-level DC converter - Google Patents
Input stage circuit of three-level DC converter Download PDFInfo
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- CN100384071C CN100384071C CNB2004100744287A CN200410074428A CN100384071C CN 100384071 C CN100384071 C CN 100384071C CN B2004100744287 A CNB2004100744287 A CN B2004100744287A CN 200410074428 A CN200410074428 A CN 200410074428A CN 100384071 C CN100384071 C CN 100384071C
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Abstract
The present invention relates to an input stage circuit of a three-level direct current converter, which is characterized in that an accelerated condenser is discharged by a metallic oxide semiconductor field effect transistor, which can make the voltage of the accelerated condenser stabilized at half of the input voltage. Thus, the present invention solves the problem in the prior art that the voltage of the accelerated condenser is high. The present invention has the advantages of no energy loss during discharging and no influence on the normal work of circuits, so that the defects of the prior solutions can be avoided.
Description
Technical field
The invention relates to a kind of DC converter, and particularly about a kind of invention of input stage circuit of three-level DC converter.
Background technology
The three-level DC converter that possesses zero voltage switch (zero voltage switching abbreviates ZVS as) has a lot of application at high voltage and high-power field, for example telecommunication system, battery charger and uninterrupted power supply or the like.Its advantage is low-loss and high efficiency.
What Fig. 1 represented is typical three-level DC converter, can be divided into input stage circuit 101, transformer T, with output-stage circuit 102 3 parts.Wherein input stage circuit 101 is connected in the primary side of transformer T, four mos field effect transistor (the abbreviating MOSFET as) Qa, Qb, Qc, Qd and the resonant inductor Lg that comprise input voltage vin, voltage-dividing capacitor C1 and C2, sustained diode 1 and D2, speed-up condenser C3, use as switching device.Output-stage circuit 102 then is connected in the secondary side of transformer T, comprises the output rectification circuit that rectifier diode D3 and D4 form, and the output filter circuit of filtering capacitor Co and filter inductor Lo composition.
Briefly, the principle of three-level DC converter, mainly be to utilize these four switching devices of Qa to Qd, switch the sense of current back and forth by the primary side of transformer T, allow the direct current of primary side become alternating current, by output rectification circuit, allow the alternating current of secondary side output revert to direct current then, use conversion dc voltage.And the switch opportunity of these four mos field effect transistor of Qa to Qd, the drive signal that the phase-shifting full-bridge control chip (not expressing among the figure) of available UCC3875 or UCC3895 and so on is exported is controlled.
Under the normal operating conditions, the voltage of speed-up condenser C3 should maintain 1/2 of input voltage vin.Yet in open loop control, perhaps closed-loop control adds that the voltage of speed-up condenser C3 is often greater than 1/2Vin under the situation that underload or idling carry.When for example input voltage vin was 400 volts, the voltage of speed-up condenser C3 may be up to 250 volts.
Under open loop control, causing the higher reason of speed-up condenser C3 voltage is that the drive signal of control chip phase shift occurs and surpasses 100% situation, as shown in Figure 2.V wherein
GsBe the grid-source voltage of mos field effect transistor, V
AbBe the voltage between a, the b in the middle of Fig. 1, i at 2
pFor passing through the electric current of resonant inductor Lg, V in the middle of Fig. 1
DsDrain electrode-source voltage for mos field effect transistor.As can be seen from Figure 2, the drive signal of leading arm Qd and Qc has lagged behind the drive signal of lagging leg Qa and Qb, in this case, is equivalent to Qa in fact and Qb has become leading arm.For further specifying, be several material time point events below.
In the period of t0 to t1, Qa and Qd conducting are born forward voltage between a, the b.
In the period of t1 to t2, Qa turn-offs prior to Qd, and the primary current of transformer T carries out the change of current by speed-up condenser C3, speed-up condenser C3 charging.
In the period of t2 to t3, Qd closes and has no progeny, the parasitic capacitance charging of Qd and Qa, and the parasitic capacitance discharge of Qc, speed-up condenser C3 still charges.
In the period of t4 to t5, the voltage summation that Qd and Qa bear rises to and equals input voltage vin, and the voltage of Qc and Qb is zero, speed-up condenser C3 charging.
In the period of t5 to t6, Qb begins conducting, and the electric current of transformer T releases energy to power supply.
After t6, Qc begins conducting, and transformer T bears reverse voltage.
By above explanation as can be seen, in the process of whole current switching, speed-up condenser C3 always is in charged state, therefore causes its voltage higher, and can't discharge to power supply by sustained diode 1.
Under the situation that underload and idling carry, the voltage of speed-up condenser C3 is higher to be because the uneven institute of charging and discharge causes.Fig. 3 A represents the charging equivalent electric circuit of speed-up condenser C3, and Fig. 3 B represents the discharge equivalent electric circuit of speed-up condenser C3.Can find out that from Fig. 3 A and 3B the parameter of two equivalent electric circuits is also inconsistent, the parasitic capacitance of lagging leg can cause charging charge greater than discharge charge less than leading arm so often, makes the voltage of speed-up condenser C3 higher.
Because the voltage of speed-up condenser C3 is higher, thereby the voltage imbalance that mos field effect transistor is born can cause the transistor collapse when serious, and circuit is damaged can't work.It is to be parallel on the speed-up condenser C3 with resistance or Transient Voltage Suppressor (transient voltage suppressor abbreviates TVS as) that a kind of solution is arranged, and so the voltage of C3 just can maintain 1/2Vin.Yet resistance can consumed energy, and resistance sizes is not easy decision, if too little or too big, can influence the circuit operate as normal, even it can't be worked.If use Transient Voltage Suppressor, shortcoming is when the voltage of speed-up condenser C3 is higher than the voltage stabilizing value of Transient Voltage Suppressor, Transient Voltage Suppressor can instant failure produce big electric current, influence the circuit operate as normal, and the energy that discharges also can full consumption at Transient Voltage Suppressor.
Therefore, we need better method, to solve the higher problem of voltage of speed-up condenser C3, avoid the shortcoming of prior art simultaneously.
Summary of the invention
The input stage circuit that the purpose of this invention is to provide a kind of three-level DC converter, the advantage of loss of energy not when not influencing the circuit operate as normal with discharge to solve the higher problem of speed-up condenser voltage, to have simultaneously.
For reaching above-mentioned and other purpose, the present invention proposes a kind of input stage circuit of three-level DC converter, is coupled to the primary side of transformer, comprising: positive input level and negative input stage, to connect input voltage; First switch module is coupled between first end of positive input level and primary side, conducting and shutoff between control input voltage and the transformer; The second switch module is coupled between first end of negative input stage and primary side conducting and shutoff between control input voltage and the transformer; First voltage-dividing capacitor is coupled between second end of positive input level and primary side; Second voltage-dividing capacitor is coupled between second end of negative input stage and primary side; Speed-up condenser is coupled between first switch module and the second switch module; A pair of fly-wheel diode is respectively coupled between second end of the two ends of speed-up condenser and primary side, and second end of wherein above-mentioned primary side is coupled to first voltage-dividing capacitor and second voltage-dividing capacitor; And discharge module, be coupled between second end of speed-up condenser and above-mentioned primary side, make the speed-up condenser discharge.
Described according to preferred embodiment of the present invention, the discharge module that the input stage circuit system of above-mentioned three-level DC converter adopts mos field effect transistor to form makes the speed-up condenser discharge, the voltage stable maintenance that not only makes speed-up condenser is at normal value, and loss of energy not, do not influence the circuit normal operation yet, therefore be enough to solve the speed-up condenser voltage problem of too of prior art, avoid many shortcomings of previous solution simultaneously.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the three-level DC converter circuit diagram of prior art.
Fig. 2 is in the prior art, and the drive signal phase shift of mos field effect transistor surpasses 100% o'clock coherent signal sequential chart.
Fig. 3 A is in the middle of the three-level DC converter of prior art, the charging equivalent circuit diagram of speed-up condenser.
Fig. 3 B is in the middle of the three-level DC converter of prior art, the discharge equivalent circuit diagram of speed-up condenser.
Fig. 4 is the three-level DC converter primary structure figure that comprises one embodiment of the invention.
Fig. 5 is the three-level DC converter circuit diagram that comprises one embodiment of the invention.
Fig. 6 is in the middle of one embodiment of the invention, the drive signal figure of the mos field effect transistor that discharge module comprised.
Fig. 7 to Figure 14 is the three-level DC converter circuit diagram that comprises other eight embodiment of the present invention.
The main element symbol description
101: the input stage circuit of the three-level DC converter of prior art
102: the output-stage circuit of three-level DC converter
401: the input stage circuit of the present invention's three-level DC converter
402,403: switch module
404: discharge module
A, b: level measurement point
C1, C2: voltage-dividing capacitor
C3: speed-up condenser
C4: clamp capacitor
Co: filtering capacitor
D1, D2: fly-wheel diode
D3, D4: rectifier diode
Dc1, Dc2: clamp diode
E1: first end of the primary side of transformer
E2: second end of the primary side of transformer
I1: positive input level
I2: negative input stage
i
p: current signal
Lg: resonant inductor
Lo: filter inductor
Qa, Qaux, Qaux1, Qaux2, Qb, Qc, Qd: mos field effect transistor
T: transformer
T: time shaft
T0, t1, t2, t3, t4, t5, t6: time point
V
Ab, V
Ds, V
Gs, V
GsQaux, V
GsQc: voltage signal
Vin: input voltage
Embodiment
With an embodiment, the input stage circuit of the three-level DC converter that the present invention proposes is described below.
Fig. 4 is the primary structure figure that comprises the three-level DC converter of present embodiment, and wherein the left side of transformer T is a primary side, connects the input stage circuit 401 of present embodiment, and the right of transformer T is a secondary side, connects the output-stage circuit 102 identical with Fig. 1.
Present embodiment comparatively detail circuits figure please refer to Fig. 5, and wherein switch module 402 comprises the switching device of two series connection, just mos field effect transistor (abbreviating MOSFET as) Qa and Qd; Switch module 403 comprises the switching device of two series connection too, just mos field effect transistor Qb and Qc.Comprise mos field effect transistor Qaux as for 404 of discharge modules.The annexation of remaining component is all identical with Fig. 4.
Present embodiment utilizes low power mos field effect transistor Qaux exactly, makes speed-up condenser C3 discharge, and its drive signal is roughly synchronous with mos field effect transistor Qc.Just the conduction ratio Qc of Qaux is slow slightly, to reach zero voltage switch (zero voltage switching abbreviates ZVS as), then shifts to an earlier date a little than Qc as for turn-offing, to reach Zero Current Switch (zero currentswitching abbreviates ZCS as).The drive signal of Qaux and Qc relatively please refer to Fig. 6, wherein V
GsQauxBe the grid-source voltage of Qaux, V
GsQcGrid-source voltage for Qc.So the energy of speed-up condenser C3 can be discharged into voltage-dividing capacitor C2 by the harmless lost territory of Qaux, and control method is simple, and dependable performance can not influence the operate as normal of other parts in the circuit.
The operation principle of present embodiment is described as follows.
During conducting: after the Qc conducting, its voltage is 0 volt, deducts the voltage of voltage-dividing capacitor C2 and the voltage that Qaux bears is the voltage of speed-up condenser C3.This moment, Qaux meeting conducting made speed-up condenser C3 discharge, and energy is discharged into power supply.If the voltage of speed-up condenser C3 in time is discharged into 1/2 of input voltage vin, speed-up condenser C3 can not accumulate multivoltage in the switch periods, so the voltage that Qaux bears is essentially 0 volt, ZVS conducting just.
During shutoff: before Qc turn-offed, the power electric current flow through from Qb and Qc, and the Qaux no current can turn-off Qaux this moment a little in advance reaching ZCS, and before the Qaux shutoff, the energy of speed-up condenser C3 has discharged and finished.
Fig. 7 represents to comprise the three-level DC converter of another embodiment of the present invention.This embodiment is the equivalent electric circuit of a last embodiment, with the difference of Fig. 5 be the other end that Qaux that discharge module 404 is comprised has moved on to speed-up condenser C3, the annexation of remaining component is identical.The synchronous mos field effect transistor of Qaux changes Qd into, and all the other driving methods are identical with a last embodiment.Fig. 8 then represents the 3rd embodiment of the present invention, discharge module 404 herein adopts two mos field effect transistor simultaneously, just Qaux1 and Qaux2 correspond respectively to two central Qaux of Fig. 5 and Fig. 7, and the annexation of remaining component is identical with Fig. 5 and Fig. 7.
Except the input stage circuit of first three embodiment institute foundation, also can be changed with former limit clamper.Change three embodiment that with former limit clamper and be shown in Fig. 9 to Figure 11 respectively.As shown in the figure, so-called former limit clamper is the input stage circuit at first three embodiment, adds clamp capacitor C4 and clamp diode Dc1 and Dc2.Except three assemblies of former limit clamper, the embodiment of Fig. 5, Fig. 7 and Fig. 8 is identical with Fig. 9, Figure 10 and Figure 11 respectively.
Except top six embodiment, can also produce more changeableization with another kind of former limit clamper.Figure 12 to Figure 14 represents to adopt three embodiment of another kind of former limit clamper.The difference of this a kind of former limit clamper and last a kind of former limit clamper is to have removed clamp capacitor C4.Except clamp diode Dc1 and Dc2, the embodiment of Fig. 5, Fig. 7 and Fig. 8 is identical with Figure 12, Figure 13 and Figure 14 respectively.
Described according to above embodiment, the discharge module that the input stage circuit system of the three-level DC converter that the present invention proposes adopts mos field effect transistor to form makes the speed-up condenser discharge, the voltage stable maintenance that not only makes speed-up condenser is at 1/2 of input voltage, and when discharge loss of energy not, do not influence the circuit normal operation yet, therefore be enough to solve the speed-up condenser voltage problem of too of prior art, avoid many shortcomings of previous solution simultaneously.
Though the present invention with preferred embodiment openly as above; right its is not in order to limit the present invention; the ordinary skill of any technical field that the present invention belongs to; without departing from the spirit and scope of the invention; when can doing a little change and improvement, so the present invention's protection range is as the criterion when looking claims person of defining.
Claims (12)
1. the input stage circuit of a three-level DC converter is coupled to the primary side of transformer, it is characterized in that comprising:
Positive input level and negative input stage are to connect input voltage;
First switch module is coupled between first end of this positive input level and this primary side, controls conducting and shutoff between this input voltage and this transformer;
The second switch module is coupled between first end of this negative input stage and this primary side, controls conducting and shutoff between this input voltage and this transformer;
First voltage-dividing capacitor is coupled between second end of this positive input level and this primary side;
Second voltage-dividing capacitor is coupled between second end of this negative input stage and this primary side;
Speed-up condenser is coupled between this first switch module and this second switch module;
A pair of fly-wheel diode is respectively coupled between second end of the two ends of this speed-up condenser and this primary side; And
Discharge module is coupled between second end of this speed-up condenser and this primary side, makes this speed-up condenser discharge.
2. the input stage circuit of three-level DC converter according to claim 1, it is characterized in that this first switch module and this second switch module respectively comprise connect more than a switching device.
3. the input stage circuit of three-level DC converter according to claim 2 is characterized in that each this switching device is a mos field effect transistor.
4. the input stage circuit of three-level DC converter according to claim 2 it is characterized in that this first switch module comprises two these switching devices, and this second switch module also comprises two these switching devices.
5. the input stage circuit of three-level DC converter according to claim 1 is characterized in that this discharge module comprises:
Mos field effect transistor is coupled between second end of this speed-up condenser and this primary side.
6. the input stage circuit of three-level DC converter according to claim 1 is characterized in that this discharge module comprises:
The pair of metal oxide semiconductor field effect transistor is respectively coupled between second end of the two ends of this speed-up condenser and this primary side.
7. the input stage circuit of three-level DC converter according to claim 1 is characterized in that also comprising:
A pair of clamp diode is respectively coupled between first end of the two ends of this speed-up condenser and this primary side.
8. the input stage circuit of three-level DC converter according to claim 7 is characterized in that this discharge module comprises:
Mos field effect transistor is coupled between second end of this speed-up condenser and this primary side.
9. the input stage circuit of three-level DC converter according to claim 7 is characterized in that this discharge module comprises:
The pair of metal oxide semiconductor field effect transistor is respectively coupled between second end of the two ends of this speed-up condenser and this primary side.
10. the input stage circuit of three-level DC converter according to claim 7 is characterized in that this is coupled to first end of this primary side by a clamp capacitor to clamp diode system.
11. the input stage circuit of three-level DC converter according to claim 10 is characterized in that this discharge module comprises:
Mos field effect transistor is coupled between second end of this speed-up condenser and this primary side.
12. the input stage circuit of three-level DC converter according to claim 10 is characterized in that this discharge module comprises:
The pair of metal oxide semiconductor field effect transistor is respectively coupled between second end of the two ends of this speed-up condenser and this primary side.
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| CNB2004100744287A CN100384071C (en) | 2004-09-15 | 2004-09-15 | Input stage circuit of three-level DC converter |
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| CNB2004100744287A CN100384071C (en) | 2004-09-15 | 2004-09-15 | Input stage circuit of three-level DC converter |
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| CN100384071C true CN100384071C (en) | 2008-04-23 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101860206B (en) * | 2010-05-12 | 2012-08-22 | 矽力杰半导体技术(杭州)有限公司 | Three-level buck convertor |
| CN102969881B (en) * | 2012-11-30 | 2016-01-06 | 深圳市英威腾电气股份有限公司 | A kind of voltage equalizing protection circuit and diode clamp many level topology apparatus |
| CN103208910A (en) * | 2013-05-02 | 2013-07-17 | 北京合康亿盛变频科技股份有限公司 | Dynamic brake device |
| CN104660079B (en) * | 2015-03-09 | 2019-02-05 | 全球能源互联网研究院 | A kind of three level double resonance current transformers based on silicon carbide MOSFET |
| CN108123592B (en) * | 2016-11-29 | 2020-11-10 | 台达电子企业管理（上海）有限公司 | Discharge control method for bus capacitor of power converter |
| CN110474550B (en) * | 2019-08-21 | 2020-11-10 | 阳光电源股份有限公司 | Flying capacitor type NPC three-level topology |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6349044B1 (en) * | 1999-09-09 | 2002-02-19 | Virginia Tech Intellectual Properties, Inc. | Zero voltage zero current three level dc-dc converter |
| US6353547B1 (en) * | 2000-08-31 | 2002-03-05 | Delta Electronics, Inc. | Three-level soft-switched converters |
| JP2002223573A (en) * | 2001-01-24 | 2002-08-09 | Toshiba Corp | Three-level power conversion device |
| CN1523746A (en) * | 2003-09-03 | 2004-08-25 | 浙江大学 | Three-level LLC series resonance DC/DC transformer |
-
2004
- 2004-09-15 CN CNB2004100744287A patent/CN100384071C/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6349044B1 (en) * | 1999-09-09 | 2002-02-19 | Virginia Tech Intellectual Properties, Inc. | Zero voltage zero current three level dc-dc converter |
| US6353547B1 (en) * | 2000-08-31 | 2002-03-05 | Delta Electronics, Inc. | Three-level soft-switched converters |
| JP2002223573A (en) * | 2001-01-24 | 2002-08-09 | Toshiba Corp | Three-level power conversion device |
| CN1523746A (en) * | 2003-09-03 | 2004-08-25 | 浙江大学 | Three-level LLC series resonance DC/DC transformer |
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Assignee: Delta Energy Technology (Shanghai) Co., Ltd. Assignor: Delta Optoelectronics Inc. Contract record no.: 2010990000774 Denomination of invention: Input stage circuit of three-level DC converter Granted publication date: 20080423 License type: Exclusive License Open date: 20060322 Record date: 20100920 |