CN104660079B - A kind of three level double resonance current transformers based on silicon carbide MOSFET - Google Patents
A kind of three level double resonance current transformers based on silicon carbide MOSFET Download PDFInfo
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- CN104660079B CN104660079B CN201510102606.0A CN201510102606A CN104660079B CN 104660079 B CN104660079 B CN 104660079B CN 201510102606 A CN201510102606 A CN 201510102606A CN 104660079 B CN104660079 B CN 104660079B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/10—Efficient use of energy, e.g. using compressed air or pressurized fluid as energy carrier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention provides a kind of, and the three level double resonance current transformers based on silicon carbide MOSFET include switch unit, resonant element and load unit；Resonant element includes the first resonance circuit and the second resonance circuit in parallel；Load unit includes full-bridge circuit successively in parallel, filter capacitor CoWith load resistance RLd；The vice-side winding of full-bridge circuit access transformer.Compared with prior art, a kind of three level double resonance current transformers based on silicon carbide MOSFET provided by the invention, can reduce the Current Voltage stress and switching loss of silicon carbide MOSFET, improve the whole efficiency of current transformer.
Description
Technical field
The present invention relates to a kind of resonant converters, and in particular to a kind of three level double resonances change based on silicon carbide MOSFET
Flow device.
Background technique
With the appearance of silicon carbide (Silicon Carbide, SiC) MOSFET, Wide Bandgap Semiconductor Power Devices characteristic
Improved, gradually starts to be commercialized.The breakdown voltage of the commercialization monomer SiC MOSFET of better performances is 1200V at present,
Its conducting resistance is small and turn-off speed is fast, and on-state loss and turn-off power loss are low, but it is opened speed and is not improved, switch
It is lost relatively large.For the switching frequency for improving SiC MOSFET, the converter topology with Sofe Switch characteristic will be used.
Since the voltage class of current SiC MOSFET is lower, directly in high voltage application field (such as three-phase electrical power system, combustion
Expect battery system, grid-connected power generation system and shipboard power system) using relatively difficult.And the semiconductor of three-level current transformer
The voltage stress that power device is born is the half that current transformer bears voltage, therefore low pressure resistance SiC MOSFET is applied to high voltage
Occasion be suitble to using three-level topology.
The three-level current transformer of pulsewidth modulation is able to achieve semiconductor power device ZVS Sofe Switch, but it cannot bear entirely
It carries range and realizes Sofe Switch.When change range of input voltage is wide, the efficiency change of current transformer is obvious；Diode turn off when due to
Reverse recovery characteristic influences, and reverse recovery loss is big, and shutdown due to voltage spikes is high.
In view of the above-mentioned problems, the present invention proposes a kind of three level double resonance current transformers based on silicon carbide MOSFET.It is this
Current transformer can be widely applied for the occasion of wide input voltage range, and semiconductor power device voltage stress is low, full-controlled device energy
Realize that ZVS is open-minded, diode is able to achieve ZCS shutdown, and the current stress of resonant element is low.
Wide input voltage occasion of the present invention in input voltage 1000-1200V is applied, and output power 4000W is opened
Pass frequency is 300kHz, using the control method for determining frequency displacement phase.Specific work process is shown in Part VII.
Summary of the invention
In order to meet the needs of the prior art, the three level double resonances based on silicon carbide MOSFET that the present invention provides a kind of
Current transformer, the current transformer include switch unit, resonant element and load unit；
The resonant element includes the first resonance circuit and the second resonance circuit in parallel；First resonance circuit is by humorous
Shake inductance Lr1, resonant capacitance Cr1With static exciter inductance Lm1It is composed in series, second resonance circuit is by resonant inductance Lr2、
Resonant capacitance Cr2With static exciter inductance Lm2It is composed in series；
The load unit includes full-bridge circuit successively in parallel, filter capacitor CoWith load resistance RLd；The full-bridge electricity
The vice-side winding of road access transformer.
Preferably, the switch unit includes full control circuit；One end of the full control circuit passes through wholly-controled device Q1It connects
Enter positive pole, the other end passes through wholly-controled device Q6Access power cathode；
The full control circuit includes the first branch and second branch in parallel；The first branch is by wholly-controled device Q2With
Wholly-controled device Q4It is composed in series, the second branch is by wholly-controled device Q3With wholly-controled device Q5It is composed in series；
The wholly-controled device Q1The other end be connected to wholly-controled device Q2With wholly-controled device Q3Between, the full control
Type device Q6The other end be connected to wholly-controled device Q4With wholly-controled device Q5Between；
Preferably, the switch unit further includes first diode and the second diode；
One end of the first diode is connected to wholly-controled device Q2With wholly-controled device Q3Between, other end access becomes
The primary side winding neutral point of depressor；
One end of second diode is connected to wholly-controled device Q4With wholly-controled device Q5Between, the other end also accesses
The primary side winding neutral point of transformer；
Preferably, resonant capacitance C in resonant elementr1The other end be connected to wholly-controled device Q in switch unit2With full control
Type device Q4Between, resonant capacitance Cr2The other end be connected to wholly-controled device Q in switch unit3With wholly-controled device Q5Between；
Preferably, as the wholly-controled device Q in switch unit1, wholly-controled device Q2With wholly-controled device Q3Conducting, and
Wholly-controled device Q4, wholly-controled device Q5With wholly-controled device Q6When shutdown, the voltage at the first resonance circuit both ends
The voltage at the second resonance circuit both endsThe output voltage of load unit
As the wholly-controled device Q in switch unit1, wholly-controled device Q2With wholly-controled device Q3Shutdown and full-control type device
Part Q4, wholly-controled device Q5With wholly-controled device Q6When conducting, the voltage at the first resonance circuit both endsSecond resonance
The voltage at circuit both endsThe output voltage of load unit
As the wholly-controled device Q in switch unit1, wholly-controled device Q4With wholly-controled device Q5Shutdown and full-control type device
Part Q2, wholly-controled device Q3With wholly-controled device Q6When conducting, the voltage V at the first resonance circuit both ends1=0, the second resonance circuit
The voltage V at both ends2=0, the output voltage V of load unito=0；
Wherein, the no-load voltage ratio of the transformer is n:n:1, VinFor supply voltage；
Preferably, the wholly-controled device in the switch unit is SIC MOSFET；The both ends of the wholly-controled device according to
It is secondary to be parallel with diode and capacitor；
Preferably, each bridge arm of full-bridge circuit includes a diode in the load unit.
Compared with the immediate prior art, the excellent effect of the present invention is that:
1, in technical solution of the present invention, the first resonance circuit and the second resonance circuit parallel running can reduce resonant element
The current stress of part, facilitates Component selection；
2, in technical solution of the present invention, the first resonance circuit and the second resonance circuit parallel running can reduce silicon carbide
The current stress and switching loss of MOSFET, improves the whole efficiency of current transformer；
3, in technical solution of the present invention, it can be combined using frequency control with phase shifting control, realize input voltage range
Width, change frequency narrow range；
4, a kind of three level double resonance current transformers based on silicon carbide MOSFET provided by the invention, can adapt in 1000
~1200 wide input voltage range application, output power 4000W, switching frequency 180kHz-300kHz.
Detailed description of the invention
The following further describes the present invention with reference to the drawings.
A kind of Fig. 1: structure chart of the three level double resonance current transformers based on silicon carbide MOSFET in the embodiment of the present invention；
A kind of Fig. 2: three level double resonance current transformer equivalent circuit diagrams based on silicon carbide MOSFET in the embodiment of the present invention；
A kind of Fig. 3: three level double resonance current transformer waveform diagrams based on silicon carbide MOSFET in the embodiment of the present invention；
Fig. 4: 1 schematic diagram of operation mode of current transformer in the embodiment of the present invention；
Fig. 5: 2 schematic diagram of operation mode of current transformer in the embodiment of the present invention；
Fig. 6: 3 schematic diagram of operation mode of current transformer in the embodiment of the present invention.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
A kind of three level double resonance current transformers based on silicon carbide MOSFET provided by the invention, by three-level current transformer and
The application of silicon carbide MOSFET device combines, and gives full play to silicon carbide MOSFET device in the excellent of high-frequency and high-voltage application
Gesture.In 1000~1200 wide input voltage range application, realizes the Sofe Switch of silicon carbide MOSFET, improve current transformer
Efficiency.
One, three level double resonance current transformers in the present embodiment based on silicon carbide MOSFET include switch unit, resonance list
Member and load unit.
1, switch unit
Including controlling circuit, first diode and the second diode entirely, as shown in Figure 1:
(1) control circuit includes the first branch and second branch entirely, and full one end for controlling circuit passes through wholly-controled device Q1Access
Positive pole, the other end pass through wholly-controled device Q6Access power cathode.Wholly-controled device Q1The other end be connected to full-control type device
Part Q2With wholly-controled device Q3Between, wholly-controled device Q6The other end be connected to wholly-controled device Q4With wholly-controled device Q5It
Between.
The first branch is by wholly-controled device Q2With wholly-controled device Q4It is composed in series, second branch is by wholly-controled device Q3With
Wholly-controled device Q5Composition.
(2) one end of first diode is connected to wholly-controled device Q2With wholly-controled device Q3Between, the other end accesses transformation
The primary side winding neutral point of device；As shown in Figure 1, first diode is diode D7。
One end of second diode is connected to wholly-controled device Q4With wholly-controled device Q5Between, the other end also accesses transformation
The primary side winding neutral point of device；As shown in Figure 1, the second diode is diode D8。
(3) wholly-controled device uses SIC MOSFET in the present embodiment, and the both ends each SIC MOSFET are successively parallel with
Diode and capacitor.As shown in Figure 1:
Wholly-controled device Q1Both ends are successively parallel with diode D1With capacitor C1；
Wholly-controled device Q2Both ends are successively parallel with diode D2With capacitor C2；
Wholly-controled device Q3Both ends are successively parallel with diode D3With capacitor C3；
Wholly-controled device Q4Both ends are successively parallel with diode D4With capacitor C4；
Wholly-controled device Q5Both ends are successively parallel with diode D5With capacitor C5；
Wholly-controled device Q6Both ends are successively parallel with diode D6With capacitor C6。
2, resonant element
Including the first resonance circuit and the second resonance circuit in parallel, as shown in Figure 1:
First resonance circuit is by resonant inductance Lr1, resonant capacitance Cr1With static exciter inductance Lm1It is composed in series, second is humorous
Circuit shake by resonant inductance Lr2, resonant capacitance Cr2With static exciter inductance Lm2It is composed in series.Wherein static exciter inductance Lm1
With static exciter inductance Lm2Be the magnetizing inductance that the primary side winding of transformer generates, the transformer include two-phase primary side around
Group.
Resonant capacitance C in resonant elementr1The other end be connected to wholly-controled device Q in switch unit2And wholly-controled device
Q4Between, resonant capacitance Cr2The other end be connected to wholly-controled device Q in switch unit3With wholly-controled device Q5Between.
3, load unit
Including full-bridge circuit successively in parallel, filter capacitor CoWith load resistance RLd；The pair of full-bridge circuit access transformer
Side winding.
Each bridge arm of full-bridge circuit includes a diode in load unit, as shown in Figure 1, full-bridge circuit includes two
Pole pipe DR1, diode DR2, diode DR3With diode DR4.
Two, the equivalent electricity according to the three level double resonance current transformers based on silicon carbide MOSFET in the present embodiment as indicated with 2
Road, output control mode include:
1, positive level exports
As the wholly-controled device Q in switch unit1, wholly-controled device Q2With wholly-controled device Q3Conducting and full-control type device
Part Q4, wholly-controled device Q5With wholly-controled device Q6When shutdown, the voltage at the first resonance circuit both endsSecond resonance
The voltage at circuit both endsThe output voltage of load unitThe no-load voltage ratio of transformer is n:n:1, VinFor electricity
Source voltage.
2, negative level exports
As the wholly-controled device Q in switch unit1, wholly-controled device Q2With wholly-controled device Q3Shutdown and full-control type device
Part Q4, wholly-controled device Q5With wholly-controled device Q6When conducting, the voltage at the first resonance circuit both endsSecond resonance
The voltage at circuit both endsThe output voltage of load unit
3, zero level exports
As the wholly-controled device Q in switch unit1, wholly-controled device Q4With wholly-controled device Q5Shutdown and full-control type device
Part Q2, wholly-controled device Q3With wholly-controled device Q6When conducting, the voltage V at the first resonance circuit both ends1=0, the second resonance circuit
The voltage V at both ends2=0, the output voltage V of load unito=0.
Three, when three level double resonance current transformer steady operation in the present embodiment based on silicon carbide MOSFET, resonance current,
The waveform convertion process of resonance potential and load current are as follows:
1, as shown in figure 3, setting:
1.: wholly-controled device Q1, wholly-controled device Q2, wholly-controled device Q3, wholly-controled device Q4, wholly-controled device Q5With it is complete
Control type device Q6Conducting dutycycle it is identical；2.: wholly-controled device Q2With wholly-controled device Q3It simultaneously turns on, and turn-on instant ratio
Wholly-controled device Q1Lag time t1-t0；3.: wholly-controled device Q5With wholly-controled device Q6It simultaneously turns on, and turn-on instant is than complete
Control type device Q4Lag time t4-t3。
2, operation mode conversion process are as follows:
1.: 1 (t of operation mode0~t1)
As shown in figure 3, wholly-controled device Q1, wholly-controled device Q4With wholly-controled device Q5Conducting, wholly-controled device Q2, it is complete
Control type device Q3With wholly-controled device Q6Shutdown.
The voltage V at the first resonance circuit both ends1=0, the voltage V at the second resonance circuit both ends2=0, i.e. VAC=VAB=0.
Resonance current is equal to exciting current, i.e.,The vice-side winding of transformer is in open-circuit condition,
Resonant inductance L in first resonance circuitr1, resonant capacitance Cr1With static exciter inductance Lm1Resonance, resonance in the second resonance circuit
Inductance Lr2, resonant capacitance Cr2With static exciter inductance Lm2Resonance, but due to static exciter inductance Lm1And static exciter
Inductance Lm2Larger, although resonance occurs, resonance current variation is smaller.Wherein, under the operation mode electric current flow schematic diagram
As shown in Figure 4.
2.: 2 (t of operation mode1~t2)
As shown in figure 3, wholly-controled device Q1, wholly-controled device Q2With wholly-controled device Q3Conducting, wholly-controled device Q4, it is complete
Control type device Q5With wholly-controled device Q6Shutdown.
The voltage at the two resonance circuit both ends of voltage regulation at the first resonance circuit both ends is
Resonant inductance L in first resonance circuitr1With resonance capacitor resonance, resonant inductance L in the second resonance circuitr2It is harmonious
Shake capacitor Cr2Resonance, resonance currentResonance currentExciting currentAnd exciting currentChange greatly.t2Moment
Resonance current is equal to exciting current, i.e.,Wherein, the flow schematic diagram of electric current is such as under the operation mode
Shown in Fig. 5.
3.: 3 (t of operation mode2~t3)
As shown in figure 3, wholly-controled device Q1, wholly-controled device Q2With wholly-controled device Q3Conducting, wholly-controled device Q4, it is complete
Control type device Q5With wholly-controled device Q6Shutdown.
The voltage at the two resonance circuit both ends of voltage regulation at the first resonance circuit both ends is
Resonance current is equal to exciting current, i.e.,The vice-side winding of transformer is in open-circuit condition,
Resonant inductance L in first resonance circuitr1, resonant capacitance Cr1With static exciter inductance Lm1Resonance, resonance in the second resonance circuit
Inductance Lr2, resonant capacitance Cr2With static exciter inductance Lm2Resonance, but due to static exciter inductance Lm1And static exciter
Inductance Lm2Larger, although resonance occurs, resonance current variation is smaller, and rectifier bridge exports electric current at this time.Wherein, in the operation mode
The flow schematic diagram of lower electric current is as shown in Figure 6.
4.: 4 (t of operation mode3~t4)
The analytic process of the operation mode is identical as the analysis method of operation mode 1.
5.: 5 (t of operation mode4~t5)
The analytic process of the operation mode is identical as the analysis method of operation mode 2.
5.: 6 (t of operation mode5~t6)
The analytic process of the operation mode is identical as the analysis method of operation mode 3.
Finally it should be noted that: described embodiment is only some embodiments of the present application, rather than whole realities
Apply example.Based on the embodiment in the application, those of ordinary skill in the art are obtained without making creative work
Every other embodiment, shall fall in the protection scope of this application.
Claims (4)
1. a kind of three level double resonance current transformers based on silicon carbide MOSFET, which is characterized in that the current transformer includes switch
Unit, resonant element and load unit；
The resonant element includes the first resonance circuit and the second resonance circuit in parallel；First resonance circuit is by resonance electricity
Feel Lr1, resonant capacitance Cr1With static exciter inductance Lm1It is composed in series, second resonance circuit is by resonant inductance Lr2, resonance
Capacitor Cr2With static exciter inductance Lm2It is composed in series；
The load unit includes full-bridge circuit successively in parallel, filter capacitor CoWith load resistance RLd；The full-bridge circuit connects
Enter the vice-side winding of transformer；
The switch unit includes full control circuit；One end of the full control circuit passes through wholly-controled device Q1Positive pole is accessed, separately
One end passes through wholly-controled device Q6Access power cathode；
The full control circuit includes the first branch and second branch in parallel；The first branch is by wholly-controled device Q2With full control
Type device Q4It is composed in series, the second branch is by wholly-controled device Q3With wholly-controled device Q5It is composed in series；
The wholly-controled device Q1The other end be connected to wholly-controled device Q2With wholly-controled device Q3Between, the full-control type device
Part Q6The other end be connected to wholly-controled device Q4With wholly-controled device Q5Between；
The switch unit further includes first diode and the second diode；
One end of the first diode is connected to wholly-controled device Q2With wholly-controled device Q3Between, the other end accesses transformer
Primary side winding neutral point；
One end of second diode is connected to wholly-controled device Q4With wholly-controled device Q5Between, the other end also accesses transformation
The primary side winding neutral point of device；
As the wholly-controled device Q in switch unit1, wholly-controled device Q2With wholly-controled device Q3Conducting and wholly-controled device Q4、
Wholly-controled device Q5With wholly-controled device Q6When shutdown, the voltage at the first resonance circuit both endsSecond resonance circuit two
The voltage at end
As the wholly-controled device Q in switch unit1, wholly-controled device Q2With wholly-controled device Q3Shutdown and wholly-controled device Q4、
Wholly-controled device Q5With wholly-controled device Q6When conducting, the voltage at the first resonance circuit both endsSecond resonance circuit
The voltage at both ends
As the wholly-controled device Q in switch unit1, wholly-controled device Q4With wholly-controled device Q5Shutdown and wholly-controled device Q2、
Wholly-controled device Q3With wholly-controled device Q6When conducting, the voltage V at the first resonance circuit both ends1=0, the second resonance circuit both ends
Voltage V2=0；
Wherein, the no-load voltage ratio of the transformer is n:n:1, VinFor supply voltage.
2. current transformer as described in claim 1, which is characterized in that resonant capacitance C in resonant elementr1The other end be connected to out
Close wholly-controled device Q in unit2With wholly-controled device Q4Between, resonant capacitance Cr2The other end be connected in switch unit and control entirely
Type device Q3With wholly-controled device Q5Between.
3. current transformer as described in claim 1, which is characterized in that the wholly-controled device in the switch unit is SIC
MOSFET；The both ends of the wholly-controled device are successively parallel with diode and capacitor.
4. current transformer as described in claim 1, which is characterized in that each bridge arm of full-bridge circuit wraps in the load unit
Include a diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510102606.0A CN104660079B (en) | 2015-03-09 | 2015-03-09 | A kind of three level double resonance current transformers based on silicon carbide MOSFET |
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| CN201510102606.0A CN104660079B (en) | 2015-03-09 | 2015-03-09 | A kind of three level double resonance current transformers based on silicon carbide MOSFET |
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| CN110323954B (en) * | 2019-08-08 | 2020-11-03 | 中车青岛四方车辆研究所有限公司 | Three-level traction power module based on SiC power device and inverter circuit |
| CN112421962B (en) * | 2020-11-03 | 2022-04-05 | 深圳第三代半导体研究院 | Two-stage DC-DC converter with partial power regulation function |
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| CN1750374A (en) * | 2004-09-15 | 2006-03-22 | 台达电子工业股份有限公司 | Input stage circuit of three-level DC converter |
| CN101728961B (en) * | 2009-12-09 | 2012-06-06 | 艾默生网络能源有限公司 | AC/DC convertor |
| CN101902143A (en) * | 2010-07-26 | 2010-12-01 | 南京航空航天大学 | Capacitor-clamped three-level dual-buck half-bridge inverter |
| CN102594191A (en) * | 2012-02-24 | 2012-07-18 | 西安交通大学 | Active clamping three-level zero-voltage soft-switching converter using coupled inductor |
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