CN105680297A - Laser driving circuit of half-bridge/inversion circuit - Google Patents
Laser driving circuit of half-bridge/inversion circuit Download PDFInfo
- Publication number
- CN105680297A CN105680297A CN201610213613.2A CN201610213613A CN105680297A CN 105680297 A CN105680297 A CN 105680297A CN 201610213613 A CN201610213613 A CN 201610213613A CN 105680297 A CN105680297 A CN 105680297A
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- inductance
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- diode
- electric capacity
- transformator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
- Inverter Devices (AREA)
Abstract
The invention relates to a laser driving circuit of a half-bridge/inversion circuit. DC filtering capacitors C1, C2 and C3, an output rectification and filtering circuit including D1, D2, D3, D4, L2 and Cd, driving resistors R1 and R2 and a controller MCU are included.
Description
Technical field
The present invention relates to the drive circuit of a kind of laser instrument, belong to photoelectron technical field.
Background technology
The kind of laser instrument has a variety of, as solid state laser, gas laser, semiconductor laser, optical fiber laser etc. In the middle of these laser instrument, except belonging to Direct Current pumping except part semiconductor laser instrument, all the other laser instrument are essentially all and carry out pumping by pumping source, especially for powerful laser instrument, need to use powerful drive circuit that pumping source is driven, thus producing powerful pump light, but generally being directed to the drive circuit that different laser instrument designs is different in prior art, general drive circuit seldom can be adapted on other laser instrument by simple change. And, drive circuit for high power laser, superpower laser it is generally required to driving voltage also higher, now, transformator not easily designs, and is mainly reflected in insulation bad, and parasitic capacitance is big, the problems such as leakage inductance is big, furthermore in such circuit, the secondary devices of transformator is not easy to choose. The present invention puts forward for the problems referred to above just.
Summary of the invention
According to one embodiment of the invention, it is provided that a kind of soft switching inverting circuit drive circuit for laser, particular make-up is as follows:
Including input, wherein input includes positive input terminal vin+ and negative input end vin-, positive input terminal is connected respectively to one end of electric capacity C1, one end of electric capacity C2 and the colelctor electrode of insulated-gate type field effect transistor IGBT1, the other end of electric capacity C2 is connected to one end of electric capacity C3, one end of transformator T1 primary coil and an input of current sensor ISEN1, the another one input of current sensor ISEN1 connects one end of inductance L3, the other end of inductance L3 is commonly connected to the emitter stage of insulated-gate type field effect transistor IGBT1 and the colelctor electrode of insulated-gate type field effect transistor IGBT2 after being connected with the other end of transformator T1 primary coil, the other end of negative input end vin-and electric capacity C1 and C3 is commonly connected to the emitter stage of IGBT2 after being connected, the gate pole of IGBT1 and IGBT2 is all connected to Micro-processor MCV. two outfans of T1 level of transformator, one outfan connects the negative electrode of diode D1 and the anode of diode D2, another one outfan connects the negative electrode of diode D3 and the anode of diode D4, the anode of D2 and D4 is all connected to one end of inductance L2, the anode of diode D1 and D3 is all connected to one end of DC filter capacitor Cd, it is all in parallel with DC filter capacitor Cd that the other end of DC filter capacitor Cd is connected to the other end of inductance L2, output voltage detecting circuit and inductance R3. the output of output voltage detecting circuit and the outfan of current sensor ISEN1 are all connected to Micro-processor MCV. one end of resistance R3 is also connected to the anode of controllable silicon SCR, and the negative electrode of SCR is connected to one end of laser instrument, and the other end of resistance R3 is also connected to the other end of laser instrument.
Accompanying drawing explanation
Accompanying drawing 1 is the schematic diagram of the drive circuit for laser of the present invention.
Detailed description of the invention
The drive circuit for laser of the present invention will be described in detail in conjunction with the basis of accompanying drawing below. The drive circuit for laser particular make-up of the present invention is as follows:
Including input, wherein input includes positive input terminal vin+ and negative input end vin-, positive input terminal is connected respectively to one end of electric capacity C1, one end of electric capacity C2 and the colelctor electrode of insulated-gate type field effect transistor IGBT1, the other end of electric capacity C2 is connected to one end of electric capacity C3, one end of transformator T1 primary coil and an input of current sensor ISEN1, the another one input of current sensor ISEN1 connects one end of inductance L3, the other end of inductance L3 is commonly connected to the emitter stage of insulated-gate type field effect transistor IGBT1 and the colelctor electrode of insulated-gate type field effect transistor IGBT2 after being connected with the other end of transformator with transformator T primary line, the other end of negative input end vin-and electric capacity C1 and C3 is commonly connected to the emitter stage of IGBT2 after being connected, the gate pole of IGBT1 and IGBT2 is all connected to Micro-processor MCV. two outfans of T1 level of transformator, one outfan connects the negative electrode of diode D1 and the anode of diode D2, another one outfan connects the negative electrode of diode D3 and the anode of diode D4, the anode of D2 and D4 is all connected to one end of inductance L2, the anode of diode D1 and D3 is all connected to one end of DC filter capacitor Cd, it is all in parallel with DC filter capacitor Cd that the other end of DC filter capacitor Cd is connected to the other end of inductance L2, output voltage detecting circuit and inductance R3. the output of output voltage detecting circuit and the outfan of current sensor ISEN1 are all connected to Micro-processor MCV. one end of resistance R3 is also connected to the anode of controllable silicon SCR, and the negative electrode of SCR is connected to one end of laser instrument, and the other end of resistance R3 is also connected to the other end of laser instrument.
The present invention be a kind of half-bridge inverter circuit drive circuit for laser. Wherein C1, C2, C3 are DC filter capacitor, D1, D2, D3, D4, L2, and Cd is output rectifier and filter, R1, and R2 is for driving resistance, and MCU is controller.
Working method is as follows, IGBT1 turn on, turn off afterwards, rear IGBT2 turn on, after turn off again, so circulate. Wherein IGBT1, identical with the ON time of IGBT2, ON time is determined by the output voltage needed, during the output voltage height needed, MCU exports the driving pulse width of IGBT1 and IGBT2 and becomes big, when the output voltage of needs is low, MCU exports the driving pulse of IGBT1 and IGBT2 and diminishes, and reaches to control the purpose of output voltage by regulating the size of driving pulse.
Due to the difference of device parameters in side circuit, the ON time of IGBT2 and IGBT1 can not be identical, and this can produce a DC component on transformator T1, and it is saturated that this DC component cumulative may result in transformator T1. Reality solves this problem can concatenate with T1 capacitance block DC channel, but the method cost intensive. Can also adding current sensing means in T1 primary, moment detection DC component, thus reaching to eliminate the purpose of DC component between moment adjustment IGBT2 and IGBT1 conducting. But owing in general loop, alternating current is very big, and DC component is likely to 1% less than whole electric current, and this little DC component is possible to cause that transformator is saturated, the current sensing means of whole current range can be detected when detecting little DC component, precision is inadequate, it is possible to detected at all is less than DC component, and the current sensing means precision of little range is good, but when this big electric current, it is impossible to application.
The present invention is incorporated to inductance L3 in T1 primary, and on L3, concatenate current sensing means ISEN1, the magnetizing inductance of the inductance value of the L3 inductance value much larger than L1 and T1, but the DC impedance of the DC impedance R of the L3 DC impedance much smaller than L1 and T1, so, alternating current in loop seldom flows through L3, but most DC component can pass through L3, such ISEN1 just can use small-range high precision electro flow detection device, accurately measure DC component size, thus the moment regulates IGBT2 and IGBT1 ON time and reaches to eliminate the purpose of DC component.
Claims (1)
1. a Ban Qiao inverter circuit drive circuit for laser, including input, wherein input includes positive input terminal vin+ and negative input end vin-, positive input terminal is connected respectively to one end of electric capacity C1, one end of electric capacity C2 and the colelctor electrode of insulated-gate type field effect transistor IGBT1, the other end of electric capacity C2 is connected to one end of electric capacity C3, one end of transformator T1 primary coil and an input of current sensor ISEN1, the another one input of current sensor ISEN1 connects one end of inductance L3, the other end of inductance L3 is commonly connected to the emitter stage of insulated-gate type field effect transistor IGBT1 and the colelctor electrode of insulated-gate type field effect transistor IGBT2 after being connected with the other end of transformator with transformator T primary line, the other end of negative input end vin-and electric capacity C1 and C3 is commonly connected to the emitter stage of IGBT2 after being connected, the gate pole of IGBT1 and IGBT2 is all connected to Micro-processor MCV. two outfans of T1 level of transformator, one outfan connects the negative electrode of diode D1 and the anode of diode D2, another one outfan connects the negative electrode of diode D3 and the anode of diode D4, the anode of D2 and D4 is all connected to one end of inductance L2, the anode of diode D1 and D3 is all connected to one end of DC filter capacitor Cd, it is all in parallel with DC filter capacitor Cd that the other end of DC filter capacitor Cd is connected to the other end of inductance L2, output voltage detecting circuit and inductance R3. the output of output voltage detecting circuit and the outfan of current sensor ISEN1 are all connected to Micro-processor MCV. one end of resistance R3 is also connected to the anode of controllable silicon SCR, and the negative electrode of SCR is connected to one end of laser instrument, and the other end of resistance R3 is also connected to the other end of laser instrument.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610213613.2A CN105680297B (en) | 2016-04-01 | 2016-04-01 | A kind of half-bridge inverter circuit laser driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610213613.2A CN105680297B (en) | 2016-04-01 | 2016-04-01 | A kind of half-bridge inverter circuit laser driving circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105680297A true CN105680297A (en) | 2016-06-15 |
| CN105680297B CN105680297B (en) | 2018-08-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610213613.2A Expired - Fee Related CN105680297B (en) | 2016-04-01 | 2016-04-01 | A kind of half-bridge inverter circuit laser driving circuit |
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| CN (1) | CN105680297B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109378704A (en) * | 2017-03-23 | 2019-02-22 | 英飞凌科技股份有限公司 | For driving the circuit and method of laser diode |
| CN109863654A (en) * | 2016-10-14 | 2019-06-07 | 伟摩有限责任公司 | GaNFET is as the accumulator for being used for fast laser impulse generator |
Citations (5)
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|---|---|---|---|---|
| CN101447638A (en) * | 2008-12-17 | 2009-06-03 | 北京泰富瑞泽科技有限公司 | Laser excitation power supply and excitation method thereof |
| CN101834401A (en) * | 2009-03-13 | 2010-09-15 | 武汉奇致激光技术有限公司 | Quasi-continuous laser power supply |
| CN102522686A (en) * | 2011-11-24 | 2012-06-27 | 中国船舶重工集团公司第七〇九研究所 | Double-path laser power supply high-voltage isolation device and realization method thereof |
| CN104319610A (en) * | 2014-08-27 | 2015-01-28 | 华北电力大学（保定） | Laser driving circuit |
| CN105006730A (en) * | 2015-07-28 | 2015-10-28 | 山东神戎电子股份有限公司 | High-power quick-response laser power supply |
-
2016
- 2016-04-01 CN CN201610213613.2A patent/CN105680297B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447638A (en) * | 2008-12-17 | 2009-06-03 | 北京泰富瑞泽科技有限公司 | Laser excitation power supply and excitation method thereof |
| CN101834401A (en) * | 2009-03-13 | 2010-09-15 | 武汉奇致激光技术有限公司 | Quasi-continuous laser power supply |
| CN102522686A (en) * | 2011-11-24 | 2012-06-27 | 中国船舶重工集团公司第七〇九研究所 | Double-path laser power supply high-voltage isolation device and realization method thereof |
| CN104319610A (en) * | 2014-08-27 | 2015-01-28 | 华北电力大学（保定） | Laser driving circuit |
| CN105006730A (en) * | 2015-07-28 | 2015-10-28 | 山东神戎电子股份有限公司 | High-power quick-response laser power supply |
Non-Patent Citations (1)
| Title |
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| 撒昱: ""激光电容半桥串联谐振充电电源研究"", 《电力电子技术》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109863654A (en) * | 2016-10-14 | 2019-06-07 | 伟摩有限责任公司 | GaNFET is as the accumulator for being used for fast laser impulse generator |
| CN109863654B (en) * | 2016-10-14 | 2021-02-02 | 伟摩有限责任公司 | GaNFET as an energy store for a fast laser pulse generator |
| CN109378704A (en) * | 2017-03-23 | 2019-02-22 | 英飞凌科技股份有限公司 | For driving the circuit and method of laser diode |
| CN109378704B (en) * | 2017-03-23 | 2020-11-03 | 英飞凌科技股份有限公司 | Circuit and method for driving laser diode |
Also Published As
| Publication number | Publication date |
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| CN105680297B (en) | 2018-08-21 |
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Granted publication date: 20180821 Termination date: 20210401 |