CN207368889U - A kind of intelligence Mosfet power devices - Google Patents
A kind of intelligence Mosfet power devices Download PDFInfo
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- CN207368889U CN207368889U CN201720621700.1U CN201720621700U CN207368889U CN 207368889 U CN207368889 U CN 207368889U CN 201720621700 U CN201720621700 U CN 201720621700U CN 207368889 U CN207368889 U CN 207368889U
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Abstract
The utility model discloses a kind of intelligence Mosfet power devices; including substrate, insulation board, intelligent drives and protection circuit plate and Mosfet chip arrays; insulation board is arranged in substrate; Mosfet chip arrays are arranged on insulation board; intelligent drives and protection circuit plate are arranged in substrate, and the intelligent drives and protection circuit plate are electrically connected with Mosfet chip arrays.Reduction thermal losses is reached, while has simplified drive circuit and reduce the purpose of cost.
Description
Technical field
It the utility model is related to electronic circuit field, more particularly to a kind of intelligence Mosfet power devices.
Background technology
At present, in current industrial low-voltage, high-current output rectifier using upper, for exporting rectification, output commutation
Device generally uses several power devices such as Schottky diode, fast recovery diode, silicon-controlled.Above-mentioned device is all
Pressure drop device, electric current flow through the device and then produce fixed pressure drop, and pressure drop size just determines the power consumption size of the device.
The high-power Schottky diode pressure drop of low pressure drop of import is generally between 0.65V-0.75V.If pass through 1500A electricity
Stream, the then thermal power that can be produced in rectifier diode part are：
0.75V × 1500A=1125W
The consumption of the heat is lost, and makes to lose substantial amounts of electric energy, high heat dissipation expense and huge in high-power applications
Radiator volume increases the overall volume of rectifier.
, generally can be for a long time with the electric current carried in below 300A in existing Mosfet modules.And without driving
Circuit, and internal protection circuitry.In high current in use, need to carry out more it is used in parallel.
Therefore, there are following defect for existing technology：
Sharing control is difficult, and drive circuit is complicated, and device protection is of high cost, and heat radiation structure design is difficult, and occupied space is big
The problems such as.Mosfet modules are caused to be had difficulty in taking a step in high-power commercial Application.
Utility model content
For overcome the deficiencies in the prior art, the mesh of the utility model is to provide a kind of intelligence Mosfet power devices,
The advantages of thermal losses being reduced to realize, while simplifying drive circuit and reduce cost.
The purpose of this utility model adopts the following technical scheme that realization：
A kind of intelligence Mosfet power devices, including substrate, insulation board, intelligent drives and protection circuit plate and Mosfet
Chip array, the insulation board are arranged in substrate, and the Mosfet chip arrays are arranged on insulation board, the intelligent drives
And protection circuit plate is arranged in substrate, and the intelligent drives and protection circuit plate are electrically connected with Mosfet chip arrays.
Further, the substrate is complete copper-based bottom, and the insulation board is alumina ceramic plate.
Further, the complete copper-based bottom is as current channel and heat dissipating substrate；
The alumina ceramic plate：The mistake of one layer of insulation low thermal resistance is provided between Mosfet chip arrays and complete copper-based bottom
Passage is crossed, and low-impedance conductive channel is provided；
The intelligent drives and protection circuit plate：The positive back-pressure drive signal of isolation in device is provided for Mosfet devices,
And temperature protection and fault feedback signal inside device.
Further, further include, insulation fill stratum and shell, the insulation fill stratum are covered in Mosfet chip arrays
On, above-mentioned substrate, insulation board, intelligent drives and protection circuit plate and Mosfet chip arrays encapsulate inside the shell.
Further, the insulation fill stratum uses macromolecule silica gel material, there is provided insulation, the running environment of low thermal resistance.
Further, intelligent drives and protection circuit plate, including positive/negative-pressure generation circuit, isolated drive circuit, grid drive
Dynamic protection circuit and temperature protection observation circuit, the positive/negative-pressure generation circuit, isolated drive circuit, raster data model protection circuit
It is electrically connected with temperature protection observation circuit with Mosfet chip arrays.
Further, the positive/negative-pressure generation circuit, including resistance R1, resistance R2, capacitance C1, capacitance C2, capacitance C3,
Capacitance C4, capacitance C7, capacitance C8, capacitance C9 and diode D1, the capacitance C2 are connected between power supply VCC and ground, the electricity
Hold the series circuit and electricity that C3 is in parallel with capacitance C2, and the capacitance C4 is in parallel with capacitance C3, and the resistance R1 and capacitance C8 is formed
It is in parallel to hold C4, the capacitance C7 is in parallel with capacitance C8, and the capacitance C9 is in parallel with capacitance C7, the resistance R2 and diode D1
The series circuit of composition is in parallel with capacitance C4, and the resistance R2 connects with the cathode of diode D1, the capacitance C1 and resistance R2
It is in parallel.
Further, the isolated drive circuit, including, opto-coupler chip U1, triode Q1, triode Q2, diode
D2, diode D3, resistance R3, resistance R5 and resistance R4, the resistance R5 are connected between two input terminals of opto-coupler chip U1,
The diode D3 is in parallel with resistance R5, and one end of the resistance R3 is connected with the cathode of diode D3, and the resistance R3's is another
One end is connected with the cathode of diode D2, series resistance between the output terminal of the opto-coupler chip U1 and the base stage of triode Q1
R4, the base stage of the triode Q1 are connected with the base stage of triode Q2, the emitter of the triode Q1 and the hair of triode Q2
Emitter-base bandgap grading connects, and the collector of the triode Q1 and the VCC ends of power supply connect, and the collector of the triode Q2 is connected to ground.
Further, the raster data model protection circuit, including diode D4, resistance R6, resistance R7 and TVS diode
D5, the resistance R6 connect with resistance R7, and the TVS diode D5 is in parallel with resistance R7, and the diode D4 and resistance R6 is simultaneously
Connection.
Further, the temperature protection observation circuit, including thermistor R11, resistance R10, capacitance C5, resistance R8,
Resistance R9, controllable accurate voltage stabilizing chip U3 and opto-coupler chip U2, the resistance R10 and thermistor R11 are connected on power supply VCC
Between ground, the capacitance C5 is in parallel with thermistor R11, reference pole and the resistance R10 of the controllable accurate voltage stabilizing chip U3
Node connection between thermistor R11, the anode of the controllable accurate voltage stabilizing chip U3 are connected to ground, the controllable accurate
Between the cathode and power supply VCC of voltage stabilizing chip U3 two input terminals of series resistance R8 and resistance R9, the opto-coupler chip U2 it
Between connect an input terminal of resistance R9, the resistance R8 and opto-coupler chip U2 and be connected, the controllable accurate voltage stabilizing chip U3's
Cathode is connected with another input terminal of opto-coupler chip U2, and the output terminal of the opto-coupler chip U2 is connected with external circuit.
Compared with prior art, the beneficial effects of the utility model are：
The technical program, using Integration Design, monomer capacity is up to 1500A, built-in intelligence driving and protection circuit plate.
So as to simplify drive circuit and reduce cost, the structure of the technical program, is carried out using low internal resistance Mosfet chips at present
Encapsulation design, module internal resistance is only 0.039mOhm.Then the thermal power in the case of the identical electric current by 1500A is：1500A*
1500A*0.039mOhm=87.75W, 72% thermal losses is saved in the transform part than existing design.Subtract so as to reach
Few thermal losses, while simplify drive circuit and reduce the purpose of cost.
Brief description of the drawings
Fig. 1 is the structure diagram of the utility model intelligence Mosfet power devices；
Fig. 2 is the electronic circuitry of positive/negative-pressure generation circuit in the utility model intelligence Mosfet power devices；
Fig. 3 is the electronic circuitry of isolated drive circuit in the utility model intelligence Mosfet power devices；
Fig. 4 is the electronic circuitry that raster data model protects circuit in the utility model intelligence Mosfet power devices；
Fig. 5 is the electronic circuitry of temperature monitoring for protection circuit in the utility model intelligence Mosfet power devices.
In figure：1st, shell；2nd, Mosfet chips；3rd, insulation board；4th, intelligent drives and protection circuit plate；5th, complete copper-based bottom.
Embodiment
In the following, with reference to attached drawing and embodiment, the utility model is described further, it is necessary to explanation is,
On the premise of not colliding, it can be formed in any combination between various embodiments described below or between each technical characteristic new
Embodiment.
The technical program relates generally to a kind of pass applied in the low-voltage, high-current energy conversion of current new energy industry
The control design case of key device.More particularly to a kind of structure design of intelligence Mosfet power devices, and its internal drive and protection
The design of circuit.
As shown in Figure 1, a kind of intelligence Mosfet power devices, including substrate, insulation board 3, intelligent drives and protection circuit
Plate 4 and Mosfet chip arrays, insulation board 3 are arranged in substrate, and Mosfet chip arrays are arranged on insulation board 3, and intelligence is driven
Dynamic and protection circuit plate 4 is arranged in substrate, and the intelligent drives and protection circuit plate 4 are electrically connected with Mosfet chip arrays.
Wherein, preferable scheme, substrate are complete copper-based bottom 5, and insulation board 3 is alumina ceramic plate.
Complete copper-based bottom 5 is used as current channel and heat dissipating substrate；
Alumina ceramic plate：The transition of one layer of insulation low thermal resistance is provided between Mosfet chip arrays and complete copper-based bottom 5
Passage, and low-impedance conductive channel is provided；
Intelligent drives and protection circuit plate 4：The positive back-pressure drive signal of isolation in device is provided for Mosfet devices, and
Temperature protection and fault feedback signal inside device.
Device further includes, and insulation fill stratum and shell 1, insulation fill stratum are covered on Mosfet chip arrays, above-mentioned base
Bottom, insulation board 3, intelligent drives and protection circuit plate 4 and Mosfet chip arrays are encapsulated in shell 1.
By temperature difference welding procedure inside device, Mosfet chips 2, aluminium oxide ceramic substrate, intelligent drives and protection
Wiring board 4, complete copper-based bottom 5 successively carry out solder bond together.Above structure design, the heat transfer road of Mosfet chips 2
Footpath, the heat produced for Mosfet chips 2 are passed sequentially through after aluminium oxide ceramic substrate passes to complete copper-based bottom 5, and heat passes through complete
The heat dissipation path of copper-based 5 one low thermal resistance of offer volume of bottom distributes.By this way, the heat energy that Mosfet chips 2 produce
Enough finally it is transferred to through ceramic bases wiring board, complete copper-based bottom 5 on the radiator of external linkage.
Insulation fill stratum uses macromolecule silica gel material, there is provided insulation, the running environment of low thermal resistance.
Intelligent drives and protection circuit plate 4, including positive/negative-pressure generation circuit, isolated drive circuit, raster data model protection electricity
Road and temperature protection observation circuit, positive/negative-pressure generation circuit, isolated drive circuit, raster data model protection circuit and temperature protection prison
Slowdown monitoring circuit is electrically connected with Mosfet chip arrays.
As shown in Fig. 2, positive/negative-pressure generation circuit, including resistance R1, resistance R2, capacitance C1, capacitance C2, capacitance C3, capacitance
C4, capacitance C7, capacitance C8, capacitance C9 and diode D1, capacitance C2 are connected between power supply VCC and ground, capacitance C3 and capacitance C2
Parallel connection, capacitance C4 is in parallel with capacitance C3, and resistance R1 is in parallel with capacitance C4 with the series circuit that capacitance C8 is formed, capacitance C7 and electricity
It is in parallel to hold C8, capacitance C9 is in parallel with capacitance C7, and resistance R2 is in parallel with capacitance C4 with the series circuit that diode D1 is formed, resistance
R2 connects with the cathode of diode D1, and capacitance C1 is in parallel with resistance R2.
Pass through the voltage stabilizing and storage being composed of diode D1, resistance R1, resistance R2, capacitance C8, capacitance C9 and capacitance C1
Energy circuit, a stable bias potential is provided for the driving power supply of input, and the current potential is then used as Mosfet pipes source
The fixed level of pole.Using the fixed level of the generation as level is referred to, driving input power positive side is positive voltage, and is driven defeated
It is negative voltage to enter power supply negative side.
As described in Figure 3, isolated drive circuit, including, opto-coupler chip U1, triode Q1, triode Q2, diode D2, two
Pole pipe D3, resistance R3, resistance R5 and resistance R4, resistance R5 are connected between two input terminals of opto-coupler chip U1, diode D3
In parallel with resistance R5, one end of resistance R3 is connected with the cathode of diode D3, the other end of resistance R3 and the cathode of diode D2
Connection, the base stage and triode of series resistance R4 between the output terminal of opto-coupler chip U1 and the base stage of triode Q1, triode Q1
The base stage connection of Q2, the emitter of triode Q1 is connected with the emitter of triode Q2, the collector of triode Q1 and power supply
VCC ends connect, and the collector of triode Q2 is connected to ground.
The push-pull circuit being made up of opto-coupler chip U1, triode Q1 and triode Q2, forms the drive circuit with isolation.
When optocoupler input has high level signal, then have the driving voltage of positive voltage on Mosfet grids, turn it on；Work as optocoupler
When input terminal does not have signal input, then have the driving voltage of negative voltage on Mosfet grids, it is reliably closed.
As described in Figure 4, raster data model protection circuit, including diode D4, resistance R6, resistance R7 and TVS diode D5,
Resistance R6 connects with resistance R7, and TVS diode D5 is in parallel with resistance R7, and diode D4 is in parallel with resistance R6.
Employ the overvoltage protection that TVS diode D5 carries out grid, repid discharge passage when diode D4 is as shut-off.
As described in Figure 5, temperature protection observation circuit, including thermistor R11, resistance R10, capacitance C5, resistance R8, resistance
R9, controllable accurate voltage stabilizing chip U3 and opto-coupler chip U2, resistance R10 and thermistor R11 are connected between power supply VCC and ground,
Capacitance C5 is in parallel with thermistor R11, between the reference pole of controllable accurate voltage stabilizing chip U3 and resistance R10 and thermistor R11
Node connection, the anode of controllable accurate voltage stabilizing chip U3 is connected to ground, cathode and the power supply VCC of controllable accurate voltage stabilizing chip U3
Between series resistance R8 and resistance R9, resistance R9, resistance R8 and opto-coupler chip are connected between two input terminals of opto-coupler chip U2
The input terminal connection of U2, the cathode of controllable accurate voltage stabilizing chip U3 are connected with another input terminal of opto-coupler chip U2, light
The output terminal of coupling chip U2 is connected with external circuit.
With avalanche type PTC (thermistor) R11 and controllable accurate voltage stabilizing chip U3, controllable accurate voltage stabilizing chip U3 is used
The excess temperature supervisory circuit of TL431 chips, thermistor R11 and controllable accurate voltage stabilizing chip U3 compositions.When installed in inside modules
Thermistor R11 temperature reach triggering temperature when, the internal resistance of thermistor R11 can increase rapidly, so that steady by controllable accurate
Excess temperature signal then can be transmitted to peripheral circuit by the voltage detecting circuit of pressure chip U3 compositions by optocoupler U2, and be simultaneously closed off
The driving voltage of Mosfet.
The size of intelligence Mosfet power devices is only 100mm*66mm*16.5mm in the technical program.
The above embodiment is only the preferred embodiment of the utility model, it is impossible to is protected with this to limit the utility model
Scope, the change of any unsubstantiality that those skilled in the art is done on the basis of the utility model and replacing belongs to
In the utility model scope claimed.
Claims (10)
1. a kind of intelligence Mosfet power devices, including substrate, insulation board, intelligent drives and protection circuit plate and Mosfet chips
Array, it is characterised in that：The insulation board is arranged in substrate, and the Mosfet chip arrays are arranged on insulation board, described
Intelligent drives and protection circuit plate are arranged in substrate, and the intelligent drives and protection circuit plate are electrically connected with Mosfet chip arrays
Connect.
2. intelligence Mosfet power devices as claimed in claim 1, it is characterised in that：The substrate is complete copper-based bottom, described
Insulation board is alumina ceramic plate.
3. intelligence Mosfet power devices as claimed in claim 2, it is characterised in that：The complete copper-based bottom is as current channel
And heat dissipating substrate；
The alumina ceramic plate：The transition that one layer of insulation low thermal resistance is provided between Mosfet chip arrays and complete copper-based bottom is led to
Road, and low-impedance conductive channel is provided；
The intelligent drives and protection circuit plate：The positive back-pressure drive signal of isolation in device is provided for Mosfet devices, and
Temperature protection and fault feedback signal inside device.
4. intelligence Mosfet power devices as claimed in claim 1, it is characterised in that：Further include, insulation fill stratum and shell,
The insulation fill stratum is covered on Mosfet chip arrays, above-mentioned substrate, insulation board, intelligent drives and protection circuit plate and
Mosfet chip arrays encapsulate inside the shell.
5. intelligence Mosfet power devices as claimed in claim 4, it is characterised in that：The insulation fill stratum uses macromolecule
Silica gel material, there is provided insulation, the running environment of low thermal resistance.
6. the intelligent Mosfet power devices as described in claim 1-5 is any, it is characterised in that：Intelligent drives and protection circuit
Plate, including positive/negative-pressure generation circuit, isolated drive circuit, raster data model protection circuit and temperature protection observation circuit, it is described just
Negative voltage generating circuit, isolated drive circuit, raster data model protection circuit and temperature protection observation circuit with Mosfet chip battle arrays
Row are electrically connected.
7. intelligence Mosfet power devices as claimed in claim 6, it is characterised in that：The positive/negative-pressure generation circuit, including
Resistance R1, resistance R2, capacitance C1, capacitance C2, capacitance C3, capacitance C4, capacitance C7, capacitance C8, capacitance C9 and diode D1, it is described
Capacitance C2 is connected between power supply VCC and ground, and the capacitance C3 is in parallel with capacitance C2, and the capacitance C4 is in parallel with capacitance C3, institute
It is in parallel with capacitance C4 with the series circuit that capacitance C8 is formed to state resistance R1, the capacitance C7 is in parallel with capacitance C8, the capacitance C9
In parallel with capacitance C7, the resistance R2 is in parallel with capacitance C4 with the series circuit that diode D1 is formed, the resistance R2 and two poles
The cathode series connection of pipe D1, the capacitance C1 are in parallel with resistance R2.
8. intelligence Mosfet power devices as claimed in claim 6, it is characterised in that：The isolated drive circuit, including, light
Coupling chip U1, triode Q1, triode Q2, diode D2, diode D3, resistance R3, resistance R5 and resistance R4, the resistance R5
Be connected between two input terminals of opto-coupler chip U1, the diode D3 is in parallel with resistance R5, one end of the resistance R3 with
The cathode connection of diode D3, the other end of the resistance R3 are connected with the cathode of diode D2, and the opto-coupler chip U1's is defeated
Series resistance R4 between outlet and the base stage of triode Q1, the base stage of the triode Q1 are connected with the base stage of triode Q2, institute
The emitter for stating triode Q1 is connected with the emitter of triode Q2, and the collector of the triode Q1 and the VCC ends of power supply connect
Connect, the collector of the triode Q2 is connected to ground.
9. intelligence Mosfet power devices as claimed in claim 6, it is characterised in that：The raster data model protects circuit, bag
Diode D4, resistance R6, resistance R7 and TVS diode D5 are included, the resistance R6 connects with resistance R7, the TVS diode D5
In parallel with resistance R7, the diode D4 is in parallel with resistance R6.
10. intelligence Mosfet power devices as claimed in claim 6, it is characterised in that：The temperature protection observation circuit, bag
Include thermistor R11, resistance R10, capacitance C5, resistance R8, resistance R9, controllable accurate voltage stabilizing chip U3 and opto-coupler chip U2, institute
State resistance R10 and thermistor R11 is connected between power supply VCC and ground, the capacitance C5 is in parallel with thermistor R11, described
Node connection between the reference pole of controllable accurate voltage stabilizing chip U3 and resistance R10 and thermistor R11, the controllable accurate are steady
The anode of pressure chip U3 is connected to ground, between the cathode and power supply VCC of the controllable accurate voltage stabilizing chip U3 series resistance R8 and
One of resistance R9, the resistance R8 and opto-coupler chip U2 is connected between two input terminals of resistance R9, the opto-coupler chip U2
Input terminal connects, and the cathode of the controllable accurate voltage stabilizing chip U3 is connected with another input terminal of opto-coupler chip U2, the light
The output terminal of coupling chip U2 is connected with external circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720621700.1U CN207368889U (en) | 2017-05-31 | 2017-05-31 | A kind of intelligence Mosfet power devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720621700.1U CN207368889U (en) | 2017-05-31 | 2017-05-31 | A kind of intelligence Mosfet power devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207368889U true CN207368889U (en) | 2018-05-15 |
Family
ID=62425097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720621700.1U Active CN207368889U (en) | 2017-05-31 | 2017-05-31 | A kind of intelligence Mosfet power devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207368889U (en) |
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2017
- 2017-05-31 CN CN201720621700.1U patent/CN207368889U/en active Active
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