CN110265867A - A kind of shot nanosecond pulse laser-driven chip based on SiP encapsulation - Google Patents
A kind of shot nanosecond pulse laser-driven chip based on SiP encapsulation Download PDFInfo
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- CN110265867A CN110265867A CN201910372850.7A CN201910372850A CN110265867A CN 110265867 A CN110265867 A CN 110265867A CN 201910372850 A CN201910372850 A CN 201910372850A CN 110265867 A CN110265867 A CN 110265867A
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- circuit
- pulse laser
- driven chip
- laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of shot nanosecond pulse laser-driven chips based on SiP encapsulation comprising charging current limiter circuit, energy-storage units, current sampling circuit, GaN FET power device, GaN FET driving circuit, narrow pulse generating circuit, freewheeling circuit, ESD suppression circuit.Charging current limiter circuit in the invention patent is made of resistor coupled in parallel, narrow pulse generating circuit can generate nanosecond burst pulse, GaN FET device is driven to generate high current nanosecond pulse, the pulse that GaN FET is exported as the switch control of Laser Driven by GaN driving circuit.Compared with traditional nanosecond driving power, the invention patent can reduce circuit size using SiP encapsulation chip, reduce the parasitic inductance in Laser Driven circuit, simplify the design of nanosecond laser system.
Description
Technical field
The present invention relates to a kind of laser actuation techniques field, in particular to a kind of Laser Driven electricity based on SiP encapsulation
Source chip field.
Background technique
In recent years nanosecond laser technology is widely used in fields such as military project, manufacture, medical treatment, automobiles, and nanosecond swashs
Light can be used for the occasions such as laser radar, laser guidance, laser ranging, laser marking, laser scalpel, laser beautifying.With
Laser diode instantaneous power constantly increases, to its driving circuit require it is also higher and higher, it is desirable that have bigger pulse current,
Faster pulse raising and lowering speed, while pulse discharge loop being required to have lesser parasitic inductance, avoid circuit from generating vibration
It swings and interferes.Require driving circuit volume as small as possible in fields such as unmanned plane, automobile, laser markings.Existing scheme is based on more
PCB makes laser driven power supply circuit, and this size of power using PCB production, which is unable to get, to be further decreased, stray inductance
It is worth also higher.
In recent years the power device based on GaN technology graduallys mature, and compares and is based on Si (silicon) or SiC (silicon carbide) MOSFET,
GaN FET device has faster switching speed, laser pulse driving circuit is particularly suited for, so that high current, high-speed pulse
Laser Power Devices chip manufacturing is possibly realized.
Summary of the invention
Present invention aims to overcome that the above problem of the existing technology, provides a kind of high current based on SiP encapsulation
Laser Power Devices driving chip.
Shot nanosecond pulse laser-driven chip of the present invention based on SiP encapsulation includes charging current limiter circuit, storage
Can unit, current sampling circuit, GaN FET power device, GaN FET driving circuit, narrow pulse generating circuit, freewheeling circuit,
ESD suppression circuit.Foregoing circuit is integrated into chip piece by SiP SiP encapsulation.
Above-mentioned nanosecond laser-driven chip core power device uses GaN FET, fast with speed is turned on and off, and leads to
The big feature of stream ability.Above-mentioned charging current limiter circuit is made of resistor coupled in parallel, and effect is to inhibit energy-storage units charging current mistake
Greatly, the instantaneous power of charging is limited.Above-mentioned driving circuit uses special driving chip, and drive circuitry voltage is 5V.
Above-mentioned energy-storage units are made of multiple low temp rising high precision ceramic condenser parallel connections, provide energy for pulsed discharge；Electricity
Stream sample circuit is made of multiple high-precision low resistance resistor coupled in parallel, and current sampling circuit is connected with energy-storage units, current sample
Electric current when circuit can also limit pulsed discharge in addition to feeding back actual current value.
Above-mentioned narrow pulse generating circuit is made of 2 RC filter circuits and 1 AND gate logic chip, can be by outer
Portion's parallel resistance changes the resistance value of RC circuit, to change the width of burst pulse.
Above-mentioned freewheeling circuit is made of diode, preferably with the Schottky diode of quick recovery characteristics.
Above-mentioned ESD suppression circuit preferentially selects TVS diode, and effect is to inhibit gate-to-source and the leakage of GaNFET
Pole-source electrode overvoltage protects GaN FET not to be damaged in the occasion for having static discharge.
It is big that nanosecond may be implemented by above structure and its effect in the laser driving chip that the invention patent provides
Electric current (hundred amperes of grades) pulse output, and have the advantages that power density is high, parasitic inductance is small, quick dynamic response characteristic.
Detailed description of the invention
The nanosecond laser-driven chip schematic diagram that Fig. 1 is encapsulated based on SiP
Fig. 2 narrow pulse generating circuit schematic diagram
Fig. 3 nanosecond laser driving chip SiP encapsulation schematic diagram
Specific embodiment
The present invention is further illustrated below in conjunction with the drawings and specific embodiments.
It is as described in Figure 1, described the present invention provides a kind of shot nanosecond pulse laser-driven chip based on SiP encapsulation
Shot nanosecond pulse laser-driven chip by charging current limiter circuit (1), energy-storage units (2), current sampling circuit (3), GaN
FET power device (4), GaNFET driving circuit (5), narrow pulse generating circuit (6), freewheeling circuit (7), ESD suppression circuit (8)
Composition.
The nanosecond laser-driven chip, power supply are direct current main power source power supply voltage range 2V-75V, and it is big for exporting
Electric current nanosecond pulse electric current, pulse width 0.5ns-20ns can be arranged by non-essential resistance, and pulse current maximum is up to hundred
Ampere levels, output pulse current magnitude depend on supply voltage size.
Fig. 1 shows the nanosecond laser-driven chip schematic diagrams, and main power source power supply is by charging current limiter circuit (1) to storage
Energy unit (2) charges, and energy-storage units (2) are connected with current sampling circuit (3), and current sampling circuit (3) is by precision resistance parallel connection
It constitutes, one end is connected with energy-storage units (capacitor) cathode, and the other end is connected with the ground (cathode) of external power supply power supply.GaN
FET power device (4) is connected with freewheeling diode (7), and freewheeling diode (7) cathode is connected with the anode of energy-storage units (2),
Freewheeling diode (7) anode is connected with the drain electrode of GaN FET power device (4), the source electrode of GaN FET power device (4) and
The ground (cathode) of external power supply is connected.Freewheeling diode (7) cathode is that the anode of output (connects external laser diode
Anode), the cathode (connecting the cathode of external laser diode) of freewheeling diode (7) just extremely exported.Burst pulse occurs
Circuit (6) input is connected with external trigger signal, and output is connected with the input of GaNFET driving circuit (5).Burst pulse
The power supply that circuit (6) and GaNFET driving circuit (5) occur is connected with outside 5V power supply interface.ESD suppression circuit (8) is by 2
A TVS diode composition, one of TVS diode cathode are connected to the grid of (4) GaN FET, and anode is connected to GaN FET
(4) source electrode, another TVS cathode are connected to the drain electrode of (4) GaN FET, and anode is connected to the source electrode of (4) GaN FET.
Fig. 2 indicates the narrow pulse generating circuit (6) in the laser-driven chip, by binary channels in-phase amplifier (601),
RC filter resistance 1 (602), RC filter resistance 2 (603), RC filter capacitor 1 (604), RC filter capacitor 2 (605), same to Xiang Fang great
Device and inverting amplifier (606), high speed AND gate logic chip (607) composition.
Input signal is connected to the input of binary channels in-phase amplifier (601), and 2 of binary channels in-phase amplifier (601)
Output is separately connected 2 RC filter circuits, and one of RC filter circuit is by RC filter resistance 1 (602) and RC filter capacitor 1
(604) it constitutes, another filter circuit is made of RC filter resistance 2 (603) and RC filter capacitor 2 (605), above-mentioned two filter
The RC filter resistance resistance value of wave circuit is different, and RC filter resistance 1 (602) is greater than RC filter resistance 2 (603).RC filter capacitor 1
(604) anode is connected with the inverting amplifier input in (606), the anode and the same phase of (606) of RC filter capacitor 2 (605)
Amplifier input is connected.The output of above-mentioned (606) in-phase amplifier and inverting amplifier is linked into high speed AND gate logic core
The input of piece (607).In order to realize the pulse-width adjustment flexibility of chip, nanosecond laser-driven chip described in the invention patent
The parameter that first RC filter circuit can be adjusted by non-essential resistance, so that it is defeated to change high speed AND gate logic chip (607)
The width of pulse out.
Fig. 3 indicates the bottom view of the nanosecond laser-driven chip based on SiP encapsulation, in Fig. 3 301 be chip pipe
Foot, 302 are connected for thermal conductive metal plate with internal power ground, and 303 be the plastic-sealed body of chip.
Claims (9)
1. a kind of shot nanosecond pulse laser-driven chip based on SiP encapsulation, it is characterised in that the chip includes: charging limit
Current circuit, current sampling circuit, GaN FET power device, GaNFET driving circuit, narrow pulse generating circuit, continues at energy-storage units
Current circuit, ESD suppression circuit.
2. shot nanosecond pulse laser-driven chip according to claim 1, it is characterised in that the charging current limiter electricity
Road, energy-storage units, current sampling circuit, GaN FET power device, GaNFET driving circuit, narrow pulse generating circuit, afterflow electricity
Road, ESD suppression circuit are integrated into chip piece by SiP encapsulation.
3. shot nanosecond pulse laser-driven chip according to claim 1, it is characterised in that the charging current limiter circuit
It is made of resistor coupled in parallel, effect is to inhibit energy-storage units charging current excessive, limits the instantaneous power of charging.
4. shot nanosecond pulse laser-driven chip according to claim 1, it is characterised in that the energy-storage units are by more
A low temp rising high precision ceramic condenser parallel connection is constituted, and provides energy for pulsed discharge.
5. shot nanosecond pulse laser-driven chip according to claim 1, it is characterised in that the current sample electricity
It routes multiple high-precision low resistance resistor coupled in parallel to constitute, effect is measurement actual current value and limits output electric current.
6. shot nanosecond pulse laser-driven chip according to claim 1, it is characterised in that the power device is adopted
With GaN FET, hundreds of amperes of pulse current outputs may be implemented, driving circuit uses driving chip, drive circuitry electricity
Pressure is 5V.
7. shot nanosecond pulse laser-driven chip according to claim 1, it is characterised in that the burst pulse occurs
Circuit is made of 2 RC filter circuits and 1 AND gate logic chip, and can change the parameter of RC circuit by non-essential resistance
Value, to change the width of burst pulse.
8. shot nanosecond pulse laser-driven chip according to claim 1, it is characterised in that the freewheeling circuit by
Diode is constituted.
9. shot nanosecond pulse laser-driven chip according to claim 1, it is characterised in that the ESD suppression circuit
Preferential to select TVS diode, effect is to inhibit the overvoltage of the gate-to-source and Drain-Source of GaNFET, is there is electrostatic
The occasion of electric discharge protects GaN FET not to be damaged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910372850.7A CN110265867A (en) | 2019-05-06 | 2019-05-06 | A kind of shot nanosecond pulse laser-driven chip based on SiP encapsulation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910372850.7A CN110265867A (en) | 2019-05-06 | 2019-05-06 | A kind of shot nanosecond pulse laser-driven chip based on SiP encapsulation |
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| CN110265867A true CN110265867A (en) | 2019-09-20 |
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| CN201910372850.7A Pending CN110265867A (en) | 2019-05-06 | 2019-05-06 | A kind of shot nanosecond pulse laser-driven chip based on SiP encapsulation |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110557043A (en) * | 2019-10-11 | 2019-12-10 | 中国电子科技集团公司第十四研究所 | Nanosecond high-voltage pulse modulator based on GaNFET |
| CN111064450A (en) * | 2019-12-11 | 2020-04-24 | 北京航天控制仪器研究所 | Nanosecond SOA drive circuit and control method |
| CN111162449A (en) * | 2020-02-26 | 2020-05-15 | 歌尔股份有限公司 | Laser working circuit and 3D camera |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201393210Y (en) * | 2009-04-02 | 2010-01-27 | 深圳市同洲电子股份有限公司 | Restoring circuit and impulse generation circuit thereof |
| CN202276062U (en) * | 2011-11-02 | 2012-06-13 | 吉林市江机民科实业有限公司 | Electric quantity control pulse laser driver |
| CN102999074A (en) * | 2011-09-09 | 2013-03-27 | 株式会社理光 | Low dropout regulator |
| CN205092835U (en) * | 2015-10-30 | 2016-03-16 | 成都理工大学 | Nanosecond level high speed pulse generator |
-
2019
- 2019-05-06 CN CN201910372850.7A patent/CN110265867A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201393210Y (en) * | 2009-04-02 | 2010-01-27 | 深圳市同洲电子股份有限公司 | Restoring circuit and impulse generation circuit thereof |
| CN102999074A (en) * | 2011-09-09 | 2013-03-27 | 株式会社理光 | Low dropout regulator |
| CN202276062U (en) * | 2011-11-02 | 2012-06-13 | 吉林市江机民科实业有限公司 | Electric quantity control pulse laser driver |
| CN205092835U (en) * | 2015-10-30 | 2016-03-16 | 成都理工大学 | Nanosecond level high speed pulse generator |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110557043A (en) * | 2019-10-11 | 2019-12-10 | 中国电子科技集团公司第十四研究所 | Nanosecond high-voltage pulse modulator based on GaNFET |
| CN110557043B (en) * | 2019-10-11 | 2024-04-23 | 中国电子科技集团公司第十四研究所 | GaNFET-based nanosecond high-voltage pulse modulator |
| CN111064450A (en) * | 2019-12-11 | 2020-04-24 | 北京航天控制仪器研究所 | Nanosecond SOA drive circuit and control method |
| CN111162449A (en) * | 2020-02-26 | 2020-05-15 | 歌尔股份有限公司 | Laser working circuit and 3D camera |
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