CN108598865A - Pulse driving circuit based on vertical cavity surface emitting laser - Google Patents
Pulse driving circuit based on vertical cavity surface emitting laser Download PDFInfo
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- CN108598865A CN108598865A CN201810573672.XA CN201810573672A CN108598865A CN 108598865 A CN108598865 A CN 108598865A CN 201810573672 A CN201810573672 A CN 201810573672A CN 108598865 A CN108598865 A CN 108598865A
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- cavity surface
- vertical cavity
- emitting laser
- surface emitting
- current
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
Abstract
The invention belongs to semiconductor laser device driving circuit technical fields, and in particular to the pulse driving circuit based on vertical cavity surface emitting laser.Structure of the invention circuit includes vertical cavity surface emitting laser, energy-storage units, switch unit, driving chip, current detecting unit, charging current limiter unit and input/output interface, these components are integrated on one piece of circuit board；The light-emitting surface electrode of vertical cavity surface emitting laser is connected on circuit board, and energy-storage units are distributed in vertical cavity surface emitting laser surrounding, and switch unit is located at back of circuit board where vertical cavity surface emitting laser；Energy-storage units, vertical cavity surface emitting laser, current detecting unit and switch unit constitute discharge loop by circuit board via.The present invention utilizes the double-layer structure and circuit board multilayer circuit structure of vertical cavity surface emitting laser, can in the space of 180 degree around laser Pulse-width modulation discharge loop, it is simple in structure, distributed constant is controllable, it is easy to generate narrow pulse high-current parameter, to obtain the laser burst pulse of high-peak power.
Description
Technical field
The invention belongs to semiconductor laser device driving circuit technical fields, and in particular to be based on vertical cavity surface emitting laser
（Vertical cavity surface emitting laser, Vcsel）Pulse driving circuit, burst pulse can be generated
And high current, it is mainly used in laser radar and its related field.
Background technology
Currently, semiconductor laser of the semiconductor laser device driving circuit structure both for edge-emission, circuit and swash
Light device is often individually designed and encapsulates, and then carries out Two-level ensemble.Since individual laser package and driving circuit loop stray are joined
Several influences, laser actuating speed is slower, can not generate fast rise time, Gao Zhongying and powerful laser burst pulse.And base
In vertical-cavity surface-emitting laser light-emitting surface perpendicular to electrode, quite convenient for laser be connected in parallel form array junctions
Structure, to generate high-power laser pulse, high power laser light burst pulse is led in the lidar measurement based on the flight time in addition
Domain has broad application prospects, and pulse front edge and pulse width directly determine detection accuracy and range.
Invention content
The purpose of the present invention is to provide a kind of pulse driving circuits based on vertical cavity surface emitting laser, existing to overcome
There is semiconductor laser device driving circuit for the deficiency in terms of fast rise time burst pulse driving.
Pulse driving circuit provided by the invention based on vertical cavity surface emitting laser, makes full use of vertical-cavity surface-emitting
The design feature of laser, it is through-flow using via by the close arrangement in circuit board both sides energy-storage travelling wave tube and switch element,
Loop inductance and distribution capacity are reduced to greatest extent, to reduce impedance loop, are exported convenient for pulse high current.
Pulse driving circuit provided by the invention based on vertical cavity surface emitting laser, structure include that vertical-cavity surface-emitting swashs
Light device, energy-storage units, switch unit, driving chip, current detecting unit, charging current limiter unit and input/output interface, and
And these components are integrated on one piece of circuit board, i.e., by welding procedure, each unit and device are fixed on circuit boards；
Wherein, by way of wire bonding, the light-emitting surface electrode of the vertical cavity surface emitting laser is connected on circuit board, institute
It states energy-storage units and is distributed in vertical cavity surface emitting laser surrounding, the switch unit is located at where vertical cavity surface emitting laser
Switch unit electrode is connected on circuit board by back of circuit board by way of welding or wire bonding；The energy storage
Unit, vertical cavity surface emitting laser, current detecting unit and switch unit constitute discharge loop by circuit board via；It fills
Electric port, control signal and current monitor signal port are located at circuit board surrounding, convenient for being connect with the external world；Charging port includes
Energy-storage units charging port and switch unit driving circuit accessory power supply charging port, control are signally attached to driving chip
Input terminal, current monitor signal are used to show the current value in pulse discharge loop by vertical cavity surface emitting laser.
When other conditions are constant, change energy-storage units charging voltage, thus it is possible to vary impulse discharge current, it is defeated to change
Go out pulse laser luminous power and light energy；Change control signal, can with regulating switch unit make-and-break time and repetition rate, to
Change output pulse current width, adjusts the output light pulsewidth and frequency of vertical cavity surface emitting laser.
Since board dielectric layer dielectric constant is higher, copper can also be covered using circuit board positive and negative or pad constitutes storage
Energy unit improves discharge pulse current peak value, to improve output laser pulse peak so as to further decrease impedance loop
It is worth power.
In the present invention, the current limiting unit, including the switch that current-limiting resistance, current-limiting inductance and semiconductor devices are constituted limit
Stream measure etc..
In the present invention, the switch unit, including classes of semiconductors switching device, such as transistor BJT, thyristor SCR, door
Pole cut-off crystal brake tube GTO, mos field effect transistor MOSFET and insulated gate bipolar transistor
The controllable semiconductor switches device such as IGBT.
In the present invention, the vertical cavity surface emitting laser includes the vertical cavity surface emitting laser of various forms structure,
Such as array structure, cylindrical structure and spherical structure.
In the present invention, the energy-storage units, including conventional capacitor and inductor, further include all kinds of batteries and light
Electricity conversion, heat to electricity conversion and wind-powered electricity generation transition components.
In the present invention, the current detecting unit, including current sampling resistor, current transformer and Hall current sensing
The measurement devices such as device, by detecting current control vertical cavity surface emitting laser driving current, to change output laser pulse
Luminous power.
In the present invention, using DC charging power supply, including all kinds of constant voltage constant current charging power supplys, mainly energy-storage units are carried out
Charging.
The innovation of the invention consists in that utilizing the double-layer structure and circuit board multilayer circuit of vertical cavity surface emitting laser
Structure, can in the space of 180 degree around laser Pulse-width modulation discharge loop, distributed constant simple in structure is controllable, is easy to
Narrow pulse high-current parameter is generated, to obtain the laser burst pulse of high-peak power.
Description of the drawings
Fig. 1 is the circuit diagram of the present invention.Wherein,（a）For the circuit block diagram of driving circuit 1,（b）For driving circuit 2
Block diagram,（c）For the circuit block diagram of driving circuit 3.
Fig. 2 is the sectional structural map of integrated circuit structure.Wherein,（a）For integrated circuit structure 1,（b）For integrated circuit knot
Structure 2.
Fig. 3 is the Injection Current of VCSEL and Output optical power waveform example figure under working condition.
Fig. 4 is the exemplary diagram of IC chip and lens combination.Wherein,（a）For lens barrel schematic internal view,（b）For
IC chip and perspective view of the power supply inside lens barrel,（c）Outside lens barrel internal combustion lens and lens barrel
Schematic diagram.
Figure label：101- current limiting units, 102- switch units, 103- vertical cavity surface emitting lasers Vcsels, 104-
Energy-storage units, 105- current detecting units, 106- DC charging power supplies, 107- by-pass units, 108- pulse steeping units；
201- vertical cavity surface emitting lasers VCSEL, 202- printed circuit board, 203- power switch chips, 204- resistance capacitances
It is cloudy to be located at VCSEL for module, the bonding wire between 205- resistance capacitances module and VCSEL, the light-emitting zone of 206-VCSEL
The laser emitting mouth of pole or anode；A lateral electrode of 207-VCSEL, another lateral electrode of 208-VCSEL, polarity and 207 phases
It is right；The via of 202 interlayer of 209- printed circuit boards；
401- lens barrels inboard portion, the outer wall thread of 402- lens barrels inboard portion, 403- IC chips, 404- power supply electricity
Source, 405- lens, 406- lens barrel exterior portions, the inner thread of 407- lens barrel exterior portions.
Specific implementation mode
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is containing there are three types of the driving circuit structures based on vertical cavity surface emitting laser.
Fig. 1（a）In, current limiting unit 101 is connected with DC charging power supply 106, and switch unit 102 swashs with vertical-cavity surface-emitting
103 one end light device Vcsels is connected, 103 other end phases of current detecting unit 105 and vertical cavity surface emitting laser Vcsels
Even；Current detecting unit 105 is usually connected in series with energy-storage units 104, can both measure the discharge current of energy-storage units 104,
Its charging current can also be measured.The charge circuit of entire circuit is by DC charging power supply 106, current limiting unit 101, energy-storage units
104 are constituted with current detecting unit 105, and discharge loop is by energy-storage units 104, switch unit 102, vertical cavity surface emitting laser
Vcsels 103 is constituted with current detecting unit 105.
Fig. 1（b）In, current limiting unit 101 is connected with DC charging power supply 106,102 one end of switch unit and current detecting list
First 105 parts connection, the other end are connect with energy-storage units 104；Energy-storage units 104 and vertical cavity surface emitting laser Vcsels
103 series connection, while a Vcsels by-pass unit 107 in parallel, due to the one-way conduction of vertical cavity surface emitting laser Vcsels
On the one hand characteristic, by-pass unit 107 provide the circuit of the charging of energy-storage units 104, on the other hand provide the overvoltage protection of Vcsels
And the optical detection of laser；The charge circuit of entire circuit is by DC charging power supply 106, current limiting unit 101, energy-storage units
104 and by-pass unit 107 constitute, discharge loop is by energy-storage units 104, vertical cavity surface emitting laser Vcsels103, electric current
Detection unit 105 and switch unit 102 are constituted.
Fig. 1（c）In, current limiting unit 101 is connected with DC charging power supply 106, pulse steeping unit 108, switch unit 102
It is connected in series with current detecting unit 105；Energy-storage units 104 are connected with vertical cavity surface emitting laser Vcsels103, simultaneously
Vcsels one by-pass unit 107 of parallel connection, due to the one-way conduction characteristic of vertical cavity surface emitting laser Vcsels, by-pass unit
On the one hand 107 provide the circuit that energy-storage units 104 charge, on the other hand provide the overvoltage protection of Vcsels and the light of laser
Learn detection；The charge circuit of entire circuit is single by DC charging power supply 106, current limiting unit 101, energy-storage units 104 and bypass
Member 107 is constituted, and discharge loop is by 104 vertical cavity surface emitting laser Vcsels103 of energy-storage units, 105 arteries and veins of current detecting unit
It rushes steepness unit 108 and switch unit 102 is constituted.
In the present invention, current limiting unit 101, including the switch that current-limiting resistance, current-limiting inductance and semiconductor devices are constituted limit
Stream measure etc.；Switch unit 102, including classes of semiconductors switching device, such as transistor BJT, thyristor SCR, gate electrode capable of switching off
Thyristor GTO, mos field effect transistor MOSFET and insulated gate bipolar transistor IGBT etc. are controllable
Semiconductor switch device；Vertical cavity surface emitting laser Vcsels103 includes the vertical cavity surface-emitting laser of various forms structure
Device, such as array structure, cylindrical structure and spherical structure；Energy-storage units 104, including conventional capacitor and inductance
Device further includes all kinds of batteries and opto-electronic conversion, heat to electricity conversion and wind-powered electricity generation transition components；Current detecting unit 105, including electricity
The measurement devices such as sample resistance, current transformer and Hall current sensor are flowed, by detecting current control vertical cavity surface hair
Laser drive current is penetrated, to change output laser pulse luminous power；DC charging power supply 106, including all kinds of constant pressure and flows
Charge power supply mainly charges to energy-storage units 104；By-pass unit 107, including fly-wheel diode, charging diode,
Vcsels overvoltage protections and all kinds of optical characteristics detection components of laser pulse；Pulse steeping unit 108, including two pole of snowslide
The switching device of the fast conductings such as pipe, avalanche transistor and spark gap, or the component that especially constitutes.
Fig. 2 is the sectional structural map of integrated circuit structure.
Fig. 2（a）In, due to VCSEL201 and all very littles of power switch chip 203, and electrode is respectively positioned on chip both sides, because
This directly passes through all kinds of welderings in order to reduce the impedance of 201 driving circuits of VCSEL, by VCSEL 201 and power switch chip 203
The mode for connecing and bonding is connected to 202 both sides of printed circuit board, resistance capacitance module 204 and VCSEL201 and power switch
It is attached by way of bonding between chip 203, is located at resistance capacitance module（204）In capacitance pass through printed circuit board
（202）In conducting wire and via 209, discharge loop is constituted with VCSEL201 and power switch chip 203, due to printed circuit board
Thickness is usually less than 2mm, and entire discharge loop is minimum, and impedance loop is inhibited well, is conducive to high current burst pulse
It is formed.
Fig. 2（b）In, since VCSEL201 and 203 electrode of power switch chip are respectively positioned on chip both sides, in order to further subtract
The impedance of small VCSEL201 driving circuits, the side that VCSEL201 and power chip 203 can be passed through all kinds of welding and bonding
Formula is connected to 202 homonymy of printed circuit board, leads between resistance capacitance module 204 and VCSEL201 and power switch chip 203
The mode for crossing bonding is attached, and the capacitance being located in resistance capacitance module 204 passes through the conducting wire and mistake in printed circuit board 202
Hole 209 constitutes discharge loop, since all devices are respectively positioned on the same of circuit board with VCSEL201 and power switch chip 203
Plane, entire discharge loop is minimum, and in Fig. 2（a）On the basis of reduce discharge loop across printed circuit board introduce it is miscellaneous
Parameter is dissipated, impedance loop is inhibited well, is conducive to the formation of high current burst pulse.
Wherein, vertical cavity surface emitting laser VCSEL201, including various VCSEL and its battle array based on sandwich structure
Row；Printed circuit board 202, including the single side of various isolation materials, two-sided or multilayer circuit board, dielectric can be various
Epoxy resin, ceramics, glass and organic or inorganic material, laser and its driving circuit are located at the both sides of printed circuit board simultaneously
Close arrangement improves laser drive current ability to reduce driving circuit impedance；Power switch chip 203, including transistor
BJT, thyristor, all kinds of field-effect transistors, insulated gate bipolar transistor and electrostatic induction device；Resistance capacitance module
204, include arbitrary combination and the conducting wire connection of all kinds of resistors and capacitor；Key between resistance capacitance module and VCSEL
Alloy threads 205, such as gold thread, aluminum steel and copper wire；The light-emitting zone 206 of VCSEL is located at VCSEL cathodes or anode
Laser emitting mouth；A lateral electrode 207 of VCSEL is cathode or anode；Another lateral electrode 208 of VCSEL, polarity and 207
Relatively；The via 209 of 202 interlayer of printed circuit board, is used for the connection of upper and lower component, and quantity can carry out according to actual needs
Increase and decrease.
Fig. 3 is the Injection Current of VCSEL and Output optical power waveform example figure under working condition.It illustrates in test-strips
Under part, the exemplary diagram of the Injection Current and Output optical power waveform of VCSEL, in gain switch（gain-switch）Under pattern,
Output optical pulse width can reach tens of to hundreds of picoseconds, and with the extension of the time of Injection Current, output light pulsewidth also can
Corresponding to increase, pulsewidth can change from 1ns to hundreds of microseconds.
Fig. 4 is the exemplary diagram of IC chip and lens combination.In Fig. 4, by 403 light-emitting surface court of IC chip
On, back is connected with low-voltage power supply 404 to be combined, and nesting is fixed in lens barrel inboard portion 401 and embedding
In instrument.Lens 405 are connected with lens barrel exterior portion 406, and lens can be to light that VCSEL is sent out into line convergence, adjustment
The operations such as radiation direction adjust the design parameter and number of lens with specific reference to actual demand.
402 and 407 are threaded on the outer wall of lens barrel inboard portion 401 and the inner wall of lens barrel exterior portion 406, are led to
The connection of two parts screw thread is crossed by IC chip together with lens combination so that luminescence chip is in lens 405 naturally
Optical axis on, convenient for the optical design of whole system and integrated.
In the present invention, entirety that IC chip 403, i.e. VCSEL and driving circuit are combined on a printed circuit；
Power supply 404, the mainly high-low voltage power source to the power supply of VCSEL drive signals；Lens 405, the light for being sent out to VCSEL
Line is into line convergence and adjusts light exit direction.
Claims (8)
1. the pulse driving circuit based on vertical cavity surface emitting laser, which is characterized in that structure includes that vertical-cavity surface-emitting swashs
Light device, energy-storage units, switch unit, driving chip, current detecting unit, charging current limiter unit and input/output interface, and
And these components are integrated on one piece of circuit board；Wherein, by way of wire bonding, the vertical cavity surface-emitting laser
The light-emitting surface electrode of device is connected on circuit board, and the energy-storage units are distributed in vertical cavity surface emitting laser surrounding, described to open
It closes unit and is located at back of circuit board where vertical cavity surface emitting laser, it will switch by way of welding or wire bonding
Cell electrode is connected on circuit board；The energy-storage units, vertical cavity surface emitting laser, current detecting unit and switch are single
Member constitutes discharge loop by circuit board via；Charging port, control signal and current monitor signal port are located at circuit board
Surrounding, convenient for being connect with the external world；Charging port includes energy-storage units charging port and switch unit driving circuit accessory power supply
Charging port, control are signally attached to the input terminal of driving chip, and current monitor signal leads to for showing in pulse discharge loop
Cross the current value of vertical cavity surface emitting laser.
2. the pulse driving circuit according to claim 1 based on vertical cavity surface emitting laser, which is characterized in that when it
His condition is constant, when changing energy-storage units charging voltage, thus it is possible to vary impulse discharge current, to change output pulsed laser light
Power and light energy；Change control signal, it can be with regulating switch unit make-and-break time and repetition rate, to change output pulse
Electric current width adjusts the output light pulsewidth and frequency of vertical cavity surface emitting laser.
3. the pulse driving circuit according to claim 2 based on vertical cavity surface emitting laser, which is characterized in that described
Current limiting unit includes the switch current limiting measures of current-limiting resistance, current-limiting inductance or semiconductor devices composition.
4. the pulse driving circuit according to claim 3 based on vertical cavity surface emitting laser, which is characterized in that described
Switch unit, including classes of semiconductors switching device, selected from transistor BJT, thyristor SCR, gate level turn-off thyristor GTO,
Mos field effect transistor MOSFET and insulated gate bipolar transistor IGBT controllable semiconductor switch devices
Part.
5. the pulse driving circuit according to claim 4 based on vertical cavity surface emitting laser, which is characterized in that described
Vertical cavity surface emitting laser includes the vertical cavity surface emitting laser of various forms structure.
6. the pulse driving circuit according to claim 5 based on vertical cavity surface emitting laser, which is characterized in that described
Energy-storage units, including conventional capacitor and inductor, further include all kinds of batteries and opto-electronic conversion, heat to electricity conversion and wind
Electric transition components.
7. the pulse driving circuit according to claim 6 based on vertical cavity surface emitting laser, which is characterized in that described
Current detecting unit passes through detection selected from measurement devices such as current sampling resistor, current transformer and Hall current sensors
Current control vertical cavity surface emitting laser driving current, to change output laser pulse luminous power.
8. the pulse driving circuit according to claim 7 based on vertical cavity surface emitting laser, which is characterized in that use
DC charging power supply, including all kinds of constant voltage constant current charging power supplys, mainly charge to energy-storage units.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810573672.XA CN108598865A (en) | 2018-06-06 | 2018-06-06 | Pulse driving circuit based on vertical cavity surface emitting laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810573672.XA CN108598865A (en) | 2018-06-06 | 2018-06-06 | Pulse driving circuit based on vertical cavity surface emitting laser |
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| CN108598865A true CN108598865A (en) | 2018-09-28 |
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| CN201810573672.XA Pending CN108598865A (en) | 2018-06-06 | 2018-06-06 | Pulse driving circuit based on vertical cavity surface emitting laser |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109188622A (en) * | 2018-10-17 | 2019-01-11 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module |
| CN109346908A (en) * | 2018-12-26 | 2019-02-15 | 吉林大学 | A kind of portable high-efficiency rate laser pump (ing) source module |
| CN110940995A (en) * | 2019-11-08 | 2020-03-31 | 复旦大学 | Sensing device and method for space-based space |
| CN111948625A (en) * | 2019-05-14 | 2020-11-17 | 复旦大学 | Vertical cavity surface laser-emitting integrated chip and laser emitter |
| CN112763784A (en) * | 2020-12-20 | 2021-05-07 | 复旦大学 | Current detection device and method |
| WO2022116549A1 (en) * | 2020-12-04 | 2022-06-09 | 上海禾赛科技有限公司 | Laser emission control method, drive circuit and lidar |
| WO2023142030A1 (en) * | 2022-01-29 | 2023-08-03 | 华为技术有限公司 | Circuit structure, transmitting module, detection apparatus, and terminal device |
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Application publication date: 20180928 |
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