CN109752638B - Device and method for continuously measuring output curve of IGBT (insulated Gate Bipolar transistor) chip - Google Patents
Device and method for continuously measuring output curve of IGBT (insulated Gate Bipolar transistor) chip Download PDFInfo
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- CN109752638B CN109752638B CN201910084809.XA CN201910084809A CN109752638B CN 109752638 B CN109752638 B CN 109752638B CN 201910084809 A CN201910084809 A CN 201910084809A CN 109752638 B CN109752638 B CN 109752638B
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Abstract
The invention discloses a device and a method for continuously measuring an output curve of an IGBT chip. The device comprises a capacitor, an inductor, a tested IGBT, an auxiliary IGBT, a freewheeling diode, a load resistor, a direct-current voltage source, a driving pulse generator, a current measuring device and a voltage measuring device. The method is based on an inductance charging and discharging circuit, provides continuously changing current for the IGBT to be tested through one-time charging and discharging process, and simultaneously measures the current and the voltage of the IGBT, so that the whole output curve of the IGBT chip to be tested can be obtained, and the effect of simply and rapidly measuring the output curve of the IGBT chip is achieved.
Description
Technical Field
The invention relates to the technical field of power electronic technology measurement, in particular to a device and a method for continuously measuring an output curve of an IGBT chip.
Background
Insulated Gate Bipolar Transistors (IGBTs) combine the advantages of Metal-Oxide-Semiconductor Field-Effect transistors (MOSFETs) and Bipolar Junction Transistors (BJTs), have the characteristics of fast switching speed, voltage-type driving, reduced on-state voltage, large current capacity, and the like, and are widely applied to the fields of industry, traffic, electric power, military, aviation, electronic information, and the like. The existing high-power IGBT device needs to realize the large current level of a chip by connecting a plurality of chips in parallel. Taking a crimping type IGBT as an example, the crimping type IGBT combines the advantages of a GTO (GTR MOSFET IGBT, a gate-level turn-off thyristor) and an IGBT, a plurality of chips are directly connected in parallel in a crimping mode, the crimping type IGBT has the characteristics of double-sided heat dissipation, high reliability, short circuit failure prevention and the like, is very suitable for series application fields of power systems, ships and the like, but has very high requirements on the consistency of chip parameters when being connected in parallel with multiple chips inside the chips.
In general, chips in one device select chips on the same wafer or chips in the same production batch and on the same production date as much as possible, so that the parameters of the selected chips are as consistent as possible. Or testing the chip, and selecting the chip with consistent static parameter indexes and dynamic parameter indexes for packaging. However, these tests require very expensive measuring instruments and are complicated and cumbersome. For example, in the output curve measurement, different current points need to be set, and the on-state voltage drop on the chip needs to be tested separately (called point-by-point testing), so as to measure the output curve of the device.
Disclosure of Invention
The invention aims to provide a device and a method for continuously measuring an output curve of an IGBT chip, and aims to solve the problems of complex measurement process, high cost and low measurement efficiency of the output curve of the existing IGBT device.
In order to achieve the purpose, the invention provides the following scheme:
an apparatus for continuously measuring an output curve of an IGBT chip, the apparatus comprising: the device comprises a capacitor, an inductor, an IGBT to be detected, an auxiliary IGBT, a freewheeling diode, a load resistor, a direct-current voltage source, a driving pulse generator, a current measuring device and a voltage measuring device;
one end of the capacitor is connected with the negative electrode of the freewheeling diode, and the other end of the capacitor is connected with the emitting electrode of the auxiliary IGBT; one end of the inductor is connected with the negative electrode of the freewheeling diode, and the other end of the inductor is connected with the collector electrode of the IGBT to be tested; the positive electrode of the direct-current voltage source is connected with the gate electrode of the IGBT to be tested, and the negative electrode of the direct-current voltage source is connected with the emitter electrode of the IGBT to be tested; one end of the load resistor is connected with the anode of the freewheeling diode, and the other end of the load resistor is connected with the emitting electrode of the IGBT to be tested; the collector electrode of the auxiliary IGBT is connected with the emitter electrode of the IGBT to be tested; the gate electrode of the auxiliary IGBT is connected with the output end of the driving pulse generator; a current probe of the current measuring device is connected in a current loop of the IGBT to be measured; and a voltage probe of the voltage measuring device is connected to two ends of the IGBT to be measured.
Optionally, the dc voltage source is an adjustable dc voltage source.
Optionally, the emitter of the auxiliary IGBT is grounded.
Optionally, a current probe of the current measuring device is connected between the inductor and the IGBT to be measured.
Optionally, the voltage probe of the voltage measuring device is connected by a four-terminal wiring method.
A method for continuously measuring an output curve of an IGBT chip, which is applied to the device for continuously measuring the output curve of the IGBT chip as claimed in claim 1; the method comprises the following steps:
controlling the auxiliary IGBT to be in a turn-on state through the driving pulse output by the driving pulse generator to charge the inductor;
after the inductor is charged, the auxiliary IGBT is controlled to be in a turn-off state through the driving pulse output by the driving pulse generator, and an inductor discharging loop is formed;
measuring the current flowing through the IGBT to be measured by adopting a current probe of a current measuring device;
measuring the voltage at two ends of the IGBT to be measured by adopting a voltage probe of a voltage measuring device;
and generating an output curve of the IGBT to be tested according to the current and the voltage.
Optionally, the method further includes:
and adjusting different gate voltages of the IGBT to be detected by adopting an adjustable direct-current voltage source to obtain output curves of the IGBT to be detected under different gate voltages.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention provides a device and a method for continuously measuring an output curve of an IGBT chip, wherein the device comprises: the device comprises a capacitor, an inductor, an IGBT to be detected, an auxiliary IGBT, a freewheeling diode, a load resistor, a direct-current voltage source, a driving pulse generator, a current measuring device and a voltage measuring device; the output curve of the IGBT chip to be measured can be measured through simple circuit connection among all devices of the device, and the high cost of the existing IGBT chip output curve measuring equipment is reduced. The method can realize the switching of the inductance charging and discharging loop by controlling the on-off of the auxiliary IGBT, and the control process is very simple. The existing output curve measuring method needs to set different current points, the output curve of the device can be measured only through point-by-point testing, the consumed time is long, the continuous output curve of the IGBT chip to be tested can be obtained through one-time charging and discharging process, and the efficiency of testing the IGBT output characteristic curve is improved.
In addition, the invention adjusts different gate voltages of the IGBT to be detected through the adjustable direct-current voltage source, the driving voltage is flexibly adjusted, and the output curves of the IGBT to be detected under different gate voltages can be conveniently obtained; and the voltage at the two ends of the IGBT to be measured is always in a small voltage state, so that the measurement result is more accurate and the measurement is convenient.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings provided by the present invention without any creative effort.
FIG. 1 is a schematic circuit diagram of the apparatus for continuously measuring the output curve of the IGBT chip provided by the invention;
FIG. 2 is a circuit diagram of an inductive charging process provided by the present invention;
FIG. 3 is a circuit diagram of an inductive discharge process provided by the present invention;
fig. 4 is a timing diagram of the voltage and current of the IGBT to be tested according to the embodiment of the present invention;
fig. 5 is an output curve of the IGBT to be tested according to the embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a device and a method for continuously measuring an output curve of an IGBT chip, and aims to solve the problems of complex measurement process, high cost and low measurement efficiency of the output curve of the existing IGBT device.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Fig. 1 is a schematic circuit diagram of the device for continuously measuring the output curve of the IGBT chip according to the present invention. Referring to fig. 1, the apparatus for continuously measuring an output curve of an IGBT chip according to the present invention includes: the device comprises a capacitor C, an inductor L, an IGBT to be tested (IGBT1), an auxiliary IGBT (IGBT2), a freewheeling diode D, a load resistor R, a direct-current voltage source DC, a driving pulse generator, a current measuring device and a voltage measuring device.
One end of the capacitor C is connected with the negative electrode of the freewheeling diode D, and the other end of the capacitor C is connected with the emitter of the auxiliary IGBT (IGBT 2); and the emitter of the auxiliary IGBT is grounded. One end of the inductor L is connected with the negative electrode of the freewheeling diode D, and the other end of the inductor L is connected with the collector electrode of the IGBT (IGBT1) to be tested; the positive pole of the direct current voltage source DC is connected with the gate pole of the IGBT (IGBT1) to be tested, and the negative pole of the direct current voltage source DC is connected with the emitter pole of the IGBT (IGBT1) to be tested; one end of the load resistor R is connected with the anode of the freewheeling diode D, and the other end of the load resistor R is connected with the emitting electrode of the IGBT (IGBT1) to be tested; the collector of the auxiliary IGBT (IGBT2) is connected with the emitter of the IGBT (IGBT1) to be tested; the gate electrode of the auxiliary IGBT (IGBT2) is connected with the output end of the driving pulse generator, and the auxiliary IGBT (IGBT2) is controlled to be switched on and off according to the driving pulse output by the driving pulse generator. The auxiliary IGBT (IGBT2) and drive pulse are shown to act to control the inductor charging duration to bring the inductor current to an appropriate value.
The freewheeling diode D has two functions: firstly, in the process of charging the inductor, current is prevented from flowing through a resistance loop; secondly, in the process of inductor discharging, a follow current loop is provided for the inductor current.
The current probe A of the current measuring device is connected in a current loop of the IGBT (IGBT1) to be measured and is used for measuring the current flowing through the IGBT to be measured; and voltage probes V1 and V2 of the voltage measuring device are respectively connected to two ends of the IGBT (IGBT1) to be measured and are used for measuring the voltage of the two ends of the IGBT (IGBT1) to be measured.
The one-time charging and discharging measurement process of the device for continuously measuring the output curve of the IGBT chip comprises an inductive charging process and an inductive discharging process, the IGBT to be measured is always in a turn-on state in the whole measurement process, the auxiliary IGBT is in a turn-on state in the inductive charging process and is in a turn-off state in the inductive discharging process, and data in the discharging process, including current flowing through the IGBT to be measured and voltage at two ends of the IGBT to be measured, are mainly adopted for constructing the output curve.
Fig. 2 is a circuit diagram of an inductive charging process provided by the present invention. Referring to fig. 2, in the process of charging the inductor, the auxiliary IGBT is controlled to be in an on state by the driving pulse output by the driving pulse generator, so as to charge the inductor. The charging circuit adopts an LC circuit, and requires the matching of the inductance value and the capacitance value. When the inductor is charged, the tested IGBT and the auxiliary IGBT are in a conducting state, the freewheeling diode blocks current from flowing through the freewheeling path, so that the capacitor-inductor-tested IGBT-auxiliary IGBT form a loop, and the current of the loop rapidly rises at the moment to charge the inductor.
Fig. 3 is a circuit diagram of the inductive discharge process provided by the present invention. Referring to fig. 3, after the inductor is charged, the auxiliary IGBT is controlled to be in a turn-off state by the driving pulse output by the driving pulse generator, so as to form an inductor discharging loop. The discharge circuit adopts an RL circuit, and requires the matching of the resistance value and the inductance value. When the inductor discharges, the IGBT to be detected is in a conducting state, the auxiliary IGBT is in a switching-off state, the freewheeling diode works in a channel, the inductor, the IGBT to be detected, the load resistor and the freewheeling diode form a loop, at the moment, the current of the loop slowly drops, and the current flowing through the IGBT chip and the voltage drop on the IGBT are measured through the current probe and the voltage probe respectively.
Preferably, the DC voltage source DC is an adjustable DC voltage source. The adjustable direct-current voltage source has the functions of providing different gate voltage biases for the IGBT to be detected, adjusting different gate voltages of the IGBT to be detected and obtaining output curves of the IGBT to be detected under different gate voltages.
Preferably, the current probe of the current measuring device is connected between the inductor and the IGBT to be measured, and measures the current flowing through the IGBT to be measured. The voltage probes of the voltage measuring device are placed at two ends of the IGBT to be measured, the voltage drop on the IGBT is measured by adopting a four-terminal method, and the voltage probes with smaller measuring range can be selected because the voltage drop at the two ends of the IGBT to be measured is always smaller, so that the voltage measuring precision is improved.
The test principle of the method for continuously measuring the output curve of the IGBT chip is based on the charge and discharge circuit of the inductor, the IGBT to be measured is provided with variable current through one-time charge and discharge experiment, and the current and the voltage of the IGBT in the discharge process of the inductor are measured at the same time, so that the whole output curve can be obtained. Firstly, an external circuit is adopted to charge an inductor, when the current charging of the inductor reaches a rated value, a charging loop is disconnected, at the moment, the inductor is used as a current source, a resistor is used as a load, the IGBT chip to be tested is connected in series in the inductor-resistor circuit, the current slowly drops, and meanwhile, the current I flowing through the IGBT chip to be tested and the voltage V at the two ends of the IGBT chip to be tested are tested, so that the output curve of the IGBT chip to be tested can be drawn, and the effect of quickly measuring the output curve of the IGBT chip is achieved.
The process of measuring the primary output curve by adopting the device for continuously measuring the output curve of the IGBT chip comprises the following steps:
controlling the auxiliary IGBT to be in a turn-on state through the driving pulse output by the driving pulse generator to charge the inductor;
after the inductor is charged, the auxiliary IGBT is controlled to be in a turn-off state through the driving pulse output by the driving pulse generator, and an inductor discharging loop is formed;
measuring the current flowing through the IGBT to be measured by adopting a current probe of a current measuring device;
measuring the voltage at two ends of the IGBT to be measured by adopting a voltage probe of a voltage measuring device;
and generating an output curve of the IGBT to be tested according to the current and the voltage.
In addition, different gate voltages of the IGBT to be tested can be adjusted by adopting the adjustable direct-current voltage source, and output curves of the IGBT to be tested under different gate voltages are obtained.
The effect of the device and method of the present invention is illustrated by a specific charge-discharge experiment.
FIG. 1 is a circuit diagram of a complete test of the charge and discharge experiment of the present invention; the circuit comprises: the device comprises a capacitor, an inductor, a tested IGBT, an auxiliary IGBT, a freewheeling diode, a load resistor, an adjustable direct current voltage source, a driving pulse, a current probe and a voltage probe. The connection is carried out according to the figure 1, and the one-time charge and discharge experiment comprises two processes of inductive charge and inductive discharge. The IGBT to be tested is always in the on state in the whole experiment process, the auxiliary IGBT is in the on state in the inductor charging process and is in the off state in the inductor discharging process, and data in the discharging process are mainly adopted to construct an output curve, wherein the data comprise current flowing through the IGBT to be tested and voltage at two ends of the IGBT to be tested.
The inductive charging process circuit is shown in fig. 2; when the inductor is charged, the tested IGBT and the auxiliary IGBT are in a conducting state, the freewheeling diode blocks current from flowing through the freewheeling path, the inductor-the tested IGBT-the load resistor-the freewheeling diode form a loop to charge the inductor, and the current of the loop rapidly rises at the moment, wherein the specific waveform is shown in FIG. 4, and t in the voltage-current timing diagram of the IGBT1A time period. In fig. 4, t represents the measurement time, I represents the current flowing through the IGBT under test, and V represents the voltage across the IGBT under test.
The circuit of the inductive discharge process is shown in figure 3; when the inductor discharges, the IGBT to be detected is in a conducting state, the auxiliary IGBT is in a switching-off state, the freewheeling diode works in a channel, the inductor, the IGBT to be detected, the load resistor and the freewheeling diode form a discharging loop, the current of the discharging loop slowly drops at the moment, and the current flowing through the IGBT chip to be detected and the voltage drop on the IGBT are measured at the same time. Specific waveSee fig. 4, t in the IGBT voltage-current timing diagram2A time period.
Wherein, t is taken from the output curve of the IGBT chip to be tested2And (5) correspondingly drawing the voltage and current measurement data in the time period to obtain an output curve chart of the IGBT to be tested.
The method provided by the invention has the advantages of rapidness and simplicity, continuous current and voltage points can be obtained through one-time charge and discharge experiment, an output curve can be tested at one time, the measurement efficiency of the IGBT output curve is improved, and the cost is saved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention disclosed herein should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
The principles and embodiments of the present invention have been described herein using specific examples, which are presented solely to aid in the understanding of the devices and principles of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (5)
1. An apparatus for continuously measuring an output curve of an IGBT chip, the apparatus comprising: the device comprises a capacitor, an inductor, an IGBT to be detected, an auxiliary IGBT, a freewheeling diode, a load resistor, a direct-current voltage source, a driving pulse generator, a current measuring device and a voltage measuring device;
one end of the capacitor is connected with the negative electrode of the freewheeling diode, and the other end of the capacitor is connected with the emitting electrode of the auxiliary IGBT; one end of the inductor is connected with the negative electrode of the freewheeling diode, and the other end of the inductor is connected with the collector electrode of the IGBT to be tested; the positive electrode of the direct-current voltage source is connected with the gate electrode of the IGBT to be tested, and the negative electrode of the direct-current voltage source is connected with the emitter electrode of the IGBT to be tested; one end of the load resistor is connected with the anode of the freewheeling diode, and the other end of the load resistor is connected with the emitting electrode of the IGBT to be tested; the collector electrode of the auxiliary IGBT is connected with the emitter electrode of the IGBT to be tested; the gate electrode of the auxiliary IGBT is connected with the output end of the driving pulse generator; controlling the on and off of the auxiliary IGBT according to the driving pulse output by the driving pulse generator; the auxiliary IGBT and the driving pulse are used for controlling the charging time of the inductor;
the freewheeling diode has two functions: firstly, in the process of charging the inductor, current is prevented from flowing through a resistance loop; secondly, providing a follow current loop for the inductor current in the inductor discharging process;
a current probe of the current measuring device is connected in a current loop of the IGBT to be measured; a voltage probe of the voltage measuring device is connected to two ends of the IGBT to be measured;
the device for continuously measuring the output curve of the IGBT chip comprises a primary charge-discharge measuring process and a secondary charge-discharge measuring process, wherein the measured IGBT is always in a turn-on state in the whole measuring process, the auxiliary IGBT is in a turn-on state in the inductance charging process and is in a turn-off state in the inductance discharging process, and the constructed output curve adopts data in the discharging process, including current flowing through the measured IGBT and voltages at two ends of the measured IGBT;
in the process of charging the inductor, the auxiliary IGBT is controlled to be in a turn-on state through the driving pulse output by the driving pulse generator so as to charge the inductor; the charging circuit adopts an LC circuit, and the inductance value and the capacitance value are required to be matched; when the inductor is charged, the tested IGBT and the auxiliary IGBT are in a conducting state, the freewheeling diode blocks current from flowing through the freewheeling path, so that the capacitor-inductor-tested IGBT-auxiliary IGBT form a loop, and the current of the loop rapidly rises to charge the inductor;
after the inductor is charged, the auxiliary IGBT is controlled to be in a turn-off state through the driving pulse output by the driving pulse generator, and an inductor discharging loop is formed; the discharge loop adopts an RL circuit, and the resistance value and the inductance value are required to be matched; when the inductor discharges, the IGBT to be detected is in a conducting state, the auxiliary IGBT is in a switching-off state, the freewheeling diode works in a channel, the inductor, the IGBT to be detected, the load resistor and the freewheeling diode form a loop, at the moment, the current of the loop slowly drops, and the current flowing through the IGBT to be detected and the voltage drop on the IGBT to be detected are measured through the current probe and the voltage probe respectively;
the direct current voltage source is an adjustable direct current voltage source; and adjusting different gate voltages of the IGBT to be detected by adopting an adjustable direct-current voltage source to obtain output curves of the IGBT to be detected under different gate voltages.
2. The apparatus for continuously measuring the output curve of the IGBT chip as claimed in claim 1, wherein the emitter of the auxiliary IGBT is grounded.
3. The device for continuously measuring the output curve of the IGBT chip as claimed in claim 1, wherein a current probe of the current measuring device is connected between the inductor and the IGBT to be measured.
4. The device for continuously measuring the output curve of the IGBT chip as claimed in claim 1, wherein the voltage probe of the voltage measuring device is connected by four-terminal wiring method.
5. A method for continuously measuring an output curve of an IGBT chip is characterized in that the method is applied to the device for continuously measuring the output curve of the IGBT chip as claimed in claim 1; the method comprises the following steps:
controlling the auxiliary IGBT to be in a turn-on state through the driving pulse output by the driving pulse generator to charge the inductor;
after the inductor is charged, the auxiliary IGBT is controlled to be in a turn-off state through the driving pulse output by the driving pulse generator, and an inductor discharging loop is formed;
measuring the current flowing through the IGBT to be measured by adopting a current probe of a current measuring device;
measuring the voltage at two ends of the IGBT to be measured by adopting a voltage probe of a voltage measuring device;
and generating an output curve of the IGBT to be tested according to the current and the voltage.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010181314A (en) * | 2009-02-06 | 2010-08-19 | Fuji Electric Systems Co Ltd | Semiconductor-testing device |
| CN106168647A (en) * | 2016-05-27 | 2016-11-30 | 重庆大学 | IGBT ageing state detecting system |
| CN108267680A (en) * | 2017-12-26 | 2018-07-10 | 全球能源互联网研究院有限公司 | A kind of inductance extraction method and device based on IGBT device shutdown |
| CN108508342A (en) * | 2018-05-28 | 2018-09-07 | 中国科学院上海微系统与信息技术研究所 | A kind of IGBT short circuit overcurrents detection circuit |
| CN108627753A (en) * | 2018-05-11 | 2018-10-09 | 西安交通大学 | A kind of IGBT on-line condition monitorings method and measuring system based on Miller platform time delay |
| CN109188232A (en) * | 2018-09-06 | 2019-01-11 | 河北工业大学 | A kind of construction method of IGBT module status assessment and predicting residual useful life model |
| CN109254182A (en) * | 2018-10-12 | 2019-01-22 | 山东阅芯电子科技有限公司 | The current limiting protecting method of power device dynamic test |
-
2019
- 2019-01-29 CN CN201910084809.XA patent/CN109752638B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010181314A (en) * | 2009-02-06 | 2010-08-19 | Fuji Electric Systems Co Ltd | Semiconductor-testing device |
| CN106168647A (en) * | 2016-05-27 | 2016-11-30 | 重庆大学 | IGBT ageing state detecting system |
| CN108267680A (en) * | 2017-12-26 | 2018-07-10 | 全球能源互联网研究院有限公司 | A kind of inductance extraction method and device based on IGBT device shutdown |
| CN108627753A (en) * | 2018-05-11 | 2018-10-09 | 西安交通大学 | A kind of IGBT on-line condition monitorings method and measuring system based on Miller platform time delay |
| CN108508342A (en) * | 2018-05-28 | 2018-09-07 | 中国科学院上海微系统与信息技术研究所 | A kind of IGBT short circuit overcurrents detection circuit |
| CN109188232A (en) * | 2018-09-06 | 2019-01-11 | 河北工业大学 | A kind of construction method of IGBT module status assessment and predicting residual useful life model |
| CN109254182A (en) * | 2018-10-12 | 2019-01-22 | 山东阅芯电子科技有限公司 | The current limiting protecting method of power device dynamic test |
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