CN115407171A - PCB (printed circuit board), and diode characteristic testing system and method - Google Patents
PCB (printed circuit board), and diode characteristic testing system and method Download PDFInfo
- Publication number
- CN115407171A CN115407171A CN202110587047.2A CN202110587047A CN115407171A CN 115407171 A CN115407171 A CN 115407171A CN 202110587047 A CN202110587047 A CN 202110587047A CN 115407171 A CN115407171 A CN 115407171A
- Authority
- CN
- China
- Prior art keywords
- diode
- current
- resistor
- power supply
- tested
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention provides a PCB circuit board, a diode characteristic test system and a method, comprising the following steps: the device comprises a power switch tube, an adjustable loop resistor, an adjustable main loop inductor, an adjustable power module, a driving signal generation module, a diode to be tested and an adjustable diode junction capacitor; one end of the power switch tube is connected with the anode of the power module through the loop resistor and the main loop inductor in sequence, and the other end of the power switch tube is connected with the cathode of the power module; the driving signal generating module is connected to the driving end of the power switch tube and provides a driving signal for the power switch tube; the cathode of the diode to be tested is connected with the anode of the power module, and the anode of the diode to be tested is connected with the connection node of the loop resistor and the main loop inductor; the diode junction capacitor is connected in parallel with two ends of the diode to be measured and used for adjusting the size of the diode junction capacitor. The invention saves the cost of testing time, has simple and easy operation process, high accuracy of the test result, wider application range and strong practicability.
Description
Technical Field
The invention relates to the field of power supply application, in particular to a PCB (printed circuit board), a diode characteristic testing system and a diode characteristic testing method.
Background
In the power application field, including applications with power levels varying from tens of watts to hundreds of watts, such as adapters, PC power supplies, and chargers, the secondary rectification is usually used with a diode (mostly a schottky diode) as an output rectification, and therefore, the performance of the diode needs to be tested.
For the test in the application, usually, the test platform or the formed product is used to replace the corresponding schottky diode, so as to test the working condition of the diode in the application and judge whether the diode with a certain specification can be replaced correspondingly. For the development of new diode products, the dynamic performance of the device in specific applications cannot be clearly reflected by simply looking at the static parameters of the device, such as forward voltage drop, reverse leakage current and the like, and the specific application environment is also needed.
The existing test platform is designed aiming at a power switch tube, the parameters of a diode are not adjusted too much, corresponding inductance and parasitic parameters are different in different application situations, and different applications cannot be adjusted, if the application environment is changed, the existing test platform is required to be adjusted again, and the time consumption is relatively long; and when the current is tested, a wire needs to be introduced, parasitic inductance, resistance and the like in a circuit are increased, and the PCB test board is accelerated to age due to repeated wiring. The original application is needed to be disassembled and disassembled in operation in a mode of direct replacement on the application, the process is mostly irreversible, and the application after the disassembly test can not be recovered and used again; different applications are different in PCB design, different degrees of difficulty are caused in testing, circuits are easy to introduce, and introduced parasitic parameters can influence experimental results in different degrees.
Therefore, how to implement efficient and accurate testing of the dynamic characteristics of the diode under different application environments has become one of the problems to be solved by those skilled in the art.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a PCB, a diode characteristic testing system and a method thereof, which are used to solve the problems of low efficiency and poor accuracy of diode characteristic testing in the prior art.
To achieve the above and other related objects, the present invention provides a diode characteristic testing system, comprising:
the device comprises a power switch tube, an adjustable loop resistor, an adjustable main loop inductor, an adjustable power module, a driving signal generation module, a diode to be tested and an adjustable diode junction capacitor;
one end of the power switch tube is connected with the anode of the power module through the loop resistor and the main loop inductor in sequence, and the other end of the power switch tube is connected with the cathode of the power module;
the driving signal generating module is connected to the driving end of the power switch tube and provides a driving signal for the power switch tube;
the cathode of the diode to be tested is connected with the anode of the power module, and the anode of the diode to be tested is connected with the connection node of the loop resistor and the main loop inductor;
and the diode junction capacitor is connected in parallel with two ends of the diode to be tested and used for adjusting the size of the diode junction capacitor.
Optionally, the power module includes an energy storage capacitor, a switch, and a first dc power supply; the switch is connected with the first direct-current power supply in series, the energy storage capacitor is connected with two ends of a series structure of the switch and the first direct-current power supply in parallel, and the energy storage capacitor provides power supply voltage for the diode characteristic testing system.
More optionally, the power module further includes a current-limiting resistor, and the current-limiting resistor is connected in series in a series structure of the switch and the first dc power supply.
Optionally, the driving signal generating module is a discrete device driver or an integrated IC driver, and generates the driving signal with adjustable driving speed.
More optionally, the driving signal generating unit includes a signal generator, a first resistor, an NPN transistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a first PNP transistor, a second PNP transistor, a diode, and a second dc power supply;
a collector of the NPN triode is connected with the second direct-current power supply through the first resistor, an emitter of the NPN triode is grounded through the second resistor, and a base of the NPN triode is connected with the output end of the signal generator through the third resistor;
the emitter of the first PNP triode is connected with the second direct-current power supply, the collector of the first PNP triode is grounded through the fourth resistor, and the base of the first PNP triode is connected with the collector of the NPN triode;
the anode of the diode is connected with the collector of the first PNP triode through the fifth resistor, and the cathode of the diode is connected with the emitter of the second PNP triode and outputs a driving signal;
and the collector electrode of the second PNP triode is grounded, and the base electrode of the second PNP triode is connected with the collector electrode of the first PNP triode.
Optionally, the driving signal generating unit is a push-pull topology drive, an optocoupler drive or a transformer drive.
To achieve the above and other related objects, the present invention also provides a PCB circuit board, comprising:
the diode characteristic testing system comprises a substrate and the diode characteristic testing system arranged on the substrate.
Optionally, a hollow-out area is arranged on the PCB, and the hollow-out area is used for arranging a current clamp to realize current detection.
In order to achieve the above object and other related objects, the present invention further provides a diode characteristic testing method, which is implemented based on the diode characteristic testing system, and the diode characteristic testing method at least includes:
setting power supply voltage and various parasitic parameters in the diode characteristic test system according to actual application conditions;
providing a first driving pulse, switching on the power switch tube, charging a main loop inductor by the power supply voltage, turning off the power switch tube after the first driving pulse is ended, allowing current on the main loop inductor to follow current through the diode to be tested, generating a first current peak at the turn-on time of the diode to be tested, and obtaining turn-on loss of the diode to be tested based on the first current peak and the voltage drop of the diode to be tested;
and providing a second driving pulse, switching on the power switch tube, superposing the reverse recovery current of the diode to be tested and the current of the main loop inductor to generate a second current peak, and obtaining the turn-off loss of the diode to be tested based on the second current peak and the voltage drop of the diode to be tested.
In order to achieve the above and other related objects, the present invention further provides a diode characteristic testing method, which is implemented based on the diode characteristic testing system, and the diode characteristic testing method at least includes:
setting power supply voltage and various parasitic parameters in the diode characteristic test system according to actual application conditions;
and providing a first driving pulse, switching on the power switch tube, charging the main loop inductor by the power supply voltage, switching off the power switch tube after the first driving pulse is finished, and allowing the current on the main loop inductor to follow the current through the diode to be tested to obtain the maximum value of the surge current.
More optionally, the method for setting the power supply voltage in the diode characteristic test system includes: setting a first direct current power supply to be required test voltage, switching on a switch, charging an energy storage capacitor by the first direct current power supply until the energy storage capacitor reaches the required voltage, switching off the switch, and providing the power voltage by the energy storage capacitor.
More optionally, the current on the main loop inductor reaches a preset current by adjusting the on-time of the first driving pulse.
More optionally, the size of the junction capacitance or the parasitic inductance is adjusted to obtain the relationship between the junction capacitance or the parasitic inductance and the limit of the diode to be tested.
As described above, the PCB, the diode characteristic testing system and the method of the present invention have the following advantageous effects:
1. according to the PCB, the diode characteristic test system and the diode characteristic test method, parasitic parameters in application are measured and then adjusted on the test board, so that the performance of the diode is directly tested, and the test time cost can be greatly saved; and the operation process is simple and easy.
2. According to the PCB, the diode characteristic testing system and the diode characteristic testing method, the circuit current can be directly measured under the condition of not introducing a lead through the hollow design of the PCB, and the influence of parasitic inductance, additional impedance and the like on an experimental test result is prevented.
3. According to the PCB and the diode characteristic testing system and method, the energy storage capacitor is used for replacing a direct current power supply, the capacitor can effectively maintain the voltage at a required level during testing under the condition that the pulse testing time is short, and the current can break through the current limit of the direct current power supply to achieve a higher current level.
4. The PCB, the diode characteristic testing system and the method of the invention adjust by controlling the switching speed of the MOSFET to adapt to the severe conditions in different applications, and have wider application range.
5. The PCB, the diode characteristic testing system and the diode characteristic testing method can realize the testing of the surge current of the diode, the testing of the turn-on loss and the turn-off loss, the research of the relation between the junction capacitance and the limit of the diode and the research of the influence of the parasitic inductance on the limit parameter of the diode, and have strong practicability.
Drawings
Fig. 1 is a schematic structural diagram of a diode characteristic testing system according to the present invention.
Fig. 2 is a waveform diagram illustrating a diode switching loss test according to the present invention.
Description of the element reference numerals
1. Diode characteristic test system
11. Adjustable power supply module
111. First direct current power supply
12. Drive signal generating unit
121. Signal generator
122. Second DC power supply
S11 to S13
S21 to S22
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1-2. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
As shown in fig. 1, the present embodiment provides a diode characteristic test system 1, where the diode characteristic test system 1 includes:
the circuit comprises a power switch tube Q1, an adjustable loop resistor Radj, an adjustable main loop inductor Ladj, an adjustable power module 11, a driving signal generating module 12, a diode to be tested Dtest and an adjustable diode junction capacitor Cadj.
As shown in fig. 1, the power supply module 11 provides a power supply voltage for the diode characteristic testing system 1.
Specifically, the value of the power voltage provided by the power module 11 may be adjusted according to actual application requirements, and in this embodiment, after the test is started, the power module 11 supplies power to the diode characteristic testing system 1 through the energy storage capacitor. In this embodiment, the power module 11 includes an energy storage capacitor Cpower, a switch SW and a first dc power supply 111, and the voltage of the first dc power supply 111 is set to 5V to 300V as an example. The switch SW and the first dc power supply 111 are connected in series; as an example, the switch SW is connected to the positive electrode of the first direct current power supply 111. The energy storage capacitor Cpower is connected in parallel to two ends of the serial structure of the switch SW and the first direct current power supply 111, that is, one end of the energy storage capacitor Cpower is connected to the switch SW, and the other end of the energy storage capacitor Cpower is connected to the first direct current power supply 111; as an example, an upper plate of the energy storage capacitor Cpower is connected to the switch SW, and a lower plate of the energy storage capacitor Cpower is connected to a negative electrode of the first dc power supply 111. In order to prevent the peak of the charging current of the energy storage capacitor Cpower from being too high, the power module 11 further includes a current limiting resistor Rcl, where the current limiting resistor Rcl is connected in series in the series structure of the switch SW and the first dc power supply 111, and as an example, one end of the current limiting resistor Rcl is connected to the negative electrode of the first dc power supply 111, and the other end of the current limiting resistor Rcl is connected to the lower electrode of the energy storage capacitor Cpower.
It should be noted that any circuit capable of providing the required power voltage is suitable for the present invention, and the connection relationship of each device in the power module of this embodiment may be adjusted according to actual needs, and is not limited to this embodiment.
As shown in fig. 1, one end of the power switch Q1 is connected to the positive electrode of the power module 11 through the loop resistor Radj and the main loop inductor Ladj in sequence, and the other end is connected to the negative electrode (ground) of the power module 11.
Specifically, in this embodiment, the power switch Q1 is an NMOS transistor, a source of the power switch Q1 is grounded, and a drain of the power switch Q1 is connected to the loop resistor Radj. In practical use, the type of the power switch tube can be selected according to requirements, including but not limited to an insulated gate bipolar transistor and a metal-oxide semiconductor field effect transistor.
Specifically, the resistance of the loop resistor Radj is adjustable, and is used to simulate the impedance in the actually applied line, and the resistance of the loop resistor Radj may be adjusted according to the actually applied scenario, which is not repeated herein.
Specifically, the inductance value of the main loop inductor Ladj is adjustable, and the inductance value of the main loop inductor Ladj can be adjusted according to an actual application scenario, which is not described herein again.
As shown in fig. 1, the driving signal generating module 12 is connected to the driving end of the power switch Q1, and provides a driving signal for the power switch Q1.
Specifically, in this embodiment, the driving speed of the driving signal output by the driving signal generating module 12 is adjustable; in actual use, the driving speed of the driving signal can be fixed without a requirement on the driving speed. As an example, the driving signal generating unit 12 includes a signal generator 121, a first resistor R1, an NPN transistor Q2, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a first PNP transistor Q3, a second PNP transistor Q4, a diode D, and a second dc power supply 122. A collector of the NPN transistor Q2 is connected to the second dc power supply 122 via the first resistor R1, an emitter thereof is grounded via the second resistor R2, and a base thereof is connected to an output terminal of the signal generator 121 via the third resistor R3. The emitter of the first PNP triode Q3 is connected to the second dc power supply 122, the collector is grounded via the fourth resistor R4, and the base is connected to the collector of the NPN triode Q2. The anode of the diode D is connected to the collector of the first PNP triode Q3 via the fifth resistor R5, and the cathode is connected to the emitter of the second PNP triode Q4 and outputs a driving signal. And the collector electrode of the second PNP triode Q4 is grounded, and the base electrode of the second PNP triode Q4 is connected with the collector electrode of the first PNP triode Q3. The resistance values of the fourth resistor R4 and the fifth resistor R5 are adjustable, the fourth resistor R4 is used for controlling the turn-off speed, and the fifth resistor R5 is used for controlling the turn-on speed.
It should be noted that the circuit structure of the driving signal generating module 12 includes, but is not limited to, a push-pull topology drive, an optical coupler drive or a transformer drive, and is not limited to this embodiment. The driving signal generating module 12 includes, but is not limited to, a discrete device driver or an integrated IC driver, and any circuit structure capable of providing the driving signal required for the test is suitable for the present invention.
As shown in fig. 1, a cathode of the diode Dtest to be tested is connected to an anode of the power module 11, and an anode of the diode Dtest to be tested is connected to a connection node between the loop resistor Radj and the main loop inductor Ladj.
As shown in fig. 1, the diode junction capacitor Cadj is connected in parallel to two ends of the diode to be measured Dtest, and is used for adjusting the size of the diode junction capacitor.
Specifically, the capacitance value of the diode junction capacitor Cadj is adjustable, and the addition/reduction of the analog junction capacitance value can be selected according to experimental needs, so that the junction capacitance value capable of effectively reducing the application current spike and/or the loss in the switching process is selected, and a new product is developed in the later period to support data.
Example two
The present embodiment provides a PCB circuit board, including: the diode characteristic testing system comprises a substrate and a diode characteristic testing system arranged on the substrate; the diode characteristic testing system of the first embodiment is adopted, the substrate surface is provided with connecting circuits, and each device is arranged in a corresponding slot to realize a complete testing system.
Specifically, a hollow-out area is arranged on the PCB and used for arranging a current clamp to realize current detection. Therefore, the current flowing through the device is tested under the condition of not introducing a new connecting wire, the problems of parasitic parameter increase and the like caused by introducing the new connecting wire are effectively avoided, and the operation is convenient and simple. In practical use, the specific position of the hollow area may be set according to the current to be measured, which is not described herein.
Specifically, the PCB circuit board is provided with a reserved position hole, and parasitic parameters in the circuit can be adjusted by adjusting the reserved position hole in the circuit.
EXAMPLE III
As shown in fig. 1 and fig. 2, the present embodiment provides a diode characteristic testing method, which is implemented based on the diode characteristic testing system 1 of the first embodiment, and the diode characteristic testing method is used for obtaining a diode switching loss, and includes:
s11) setting the power supply voltage and each parasitic parameter in the diode characteristic testing system 1 according to the actual application condition.
Specifically, before the test, the first dc power supply 111 is set to the required test voltage, the switch SW is turned on, the first dc power supply 111 charges the energy storage capacitor Cpower, and after a preset time, the energy storage capacitor Cpower reaches the required voltage and accumulates a proper amount of charges, and the switch SW is turned off. In order to prevent the peak of the energy storage capacitor Cpower during charging from being too high, the current is limited through the current limiting resistor Rcl. After the test is started, the energy storage capacitor Cpower supplies the power supply voltage.
Specifically, the loop resistance Radj, the main loop inductance Ladj, the diode junction capacitance Cadj, the fourth resistance R4, and the fifth resistance R5 are adjusted according to an actual application condition; and the parasitic parameters of the diode characteristic test system 1 are adjusted through the reserved position holes according to the parasitic parameters in practical application. Thus, the practical application scene is simulated.
It should be noted that, the step of setting the power supply voltage and each parasitic parameter does not have a necessary logical relationship, and the power supply voltage may be set first, or the parasitic parameter may be set first, which is not limited herein.
S12) providing a first driving pulse, conducting the power switch tube, charging the main loop inductor by the power supply voltage, finishing the first driving pulse, turning off the power switch tube, enabling the current on the main loop inductor to follow the current through the diode to be detected, generating a first current peak at the turn-on moment of the diode to be detected, and obtaining the turn-on loss of the diode to be detected based on the first current peak and the voltage drop of the diode to be detected.
Specifically, the driving signal generating module 12 outputs a first driving pulse, when the first driving pulse is turned on, the power switch Q1 opens the circuit under the driving action, the energy storage capacitor Cpower charges the main loop inductor Ladj, and a current flows through the energy storage capacitor Cpower, the main loop inductor Ladj, and the power switch Q1. As an example, the current on the main loop inductor Ladj is adjusted to the required preset current by adjusting the on-time of the first driving pulse.
Specifically, when the current in the main loop inductor Ladj reaches a preset current, the first driving pulse is ended, the power switch Q1 is turned off, the current in the main loop inductor Ladj freewheels through the diode Dtest to be tested, a first current peak is generated at the turn-on time of the diode Dtest to be tested, the first current peak oscillates with the diode junction capacitor Cadj, and the first current peak and the voltage drop of the diode Dtest to be tested form turn-on loss of the diode Dtest to be tested, as shown in fig. 2. As an example, the integral of the product of the first current spike and the voltage drop of the diode under test Dtest is the turn-on loss.
And S13) providing a second driving pulse, conducting the power switch tube, superposing the reverse recovery current of the diode to be tested and the current of the main loop inductor to generate a second current peak, and obtaining the turn-off loss of the diode to be tested based on the second current peak and the voltage drop of the diode to be tested.
Specifically, the turn-off process of the power switch tube Q1 continues until the oscillation extinction current is stable (approximately several microseconds is needed), then the driving signal generating module 12 outputs a second driving pulse, when the second driving pulse is turned on, the reverse recovery current of the diode Dtest to be tested is superimposed with the inductor current to generate a second current peak, the second peak current oscillates with the diode junction capacitor Cadj and the junction capacitor of the power switch tube Q1, and forms the turn-off loss of the diode Dtest to be tested with the voltage drop of the diode Dtest to be tested, as shown in fig. 2. As an example, the integral of the product of the second current spike and the voltage drop of the diode under test Dtest is the turn-off loss.
It should be noted that the influence of the junction capacitance on the switching loss can be obtained by adjusting the size of the junction capacitance, and the relationship between the junction capacitance and the limit switching loss of the diode to be tested is studied. The influence of the parasitic inductance on the switching loss can be obtained by adjusting the size of the parasitic inductance, and the relation between the parasitic inductance and the limit switching loss of the diode to be tested is researched.
Example four
As shown in fig. 1, the present embodiment provides a diode characteristic testing method, which is implemented based on the diode characteristic testing system 1 of the first embodiment, and is used for acquiring a maximum value of a surge current of a diode, and includes:
s21) setting the power supply voltage and each parasitic parameter in the diode characteristic testing system according to the practical application condition.
Specifically, the specific method of this step can be referred to as step S11 in the third embodiment), which is not described herein again.
S22) providing a first driving pulse, switching on the power switch tube, charging the main loop inductor by the power supply voltage, turning off the power switch tube after the first driving pulse is finished, and freewheeling the current on the main loop inductor through the diode to be tested to obtain the maximum value of surge current.
Specifically, the driving signal generating module 12 outputs a first driving pulse, controls the current magnitude of the main loop inductor Ladj through the turn-on time of the first driving pulse, and when the current of the main loop inductor Ladj reaches a preset current, the first driving pulse is ended, the current of the main loop inductor Ladj performs freewheeling through the diode Dtest to be measured, and the maximum value of the surge current is obtained through measurement.
It should be noted that the influence of the junction capacitance on the surge current can also be obtained by adjusting the size of the junction capacitance, and the relationship between the junction capacitance and the limit surge current of the diode to be tested is researched. The influence of the parasitic inductance on the surge current can be obtained by adjusting the size of the parasitic inductance, and the relation between the parasitic inductance and the limit surge current of the diode to be tested is researched.
According to the invention, the performance of the diode can be directly tested by adjusting the parasitic parameters after the parasitic parameters are measured, a test platform does not need to be built again, and the test time cost can be greatly saved; and the operation process is simple and easy. The invention can accurately restore the actual application scene and has high test accuracy. According to the invention, the current clamp is adopted for current measurement through the hollow design of the PCB, so that the line current can be directly measured under the condition of not introducing a lead, and the influence of parasitic inductance, additional impedance and the like on an experimental test result is prevented. The invention replaces the direct current power supply with the energy storage capacitor, and under the condition of short pulse test time, the capacitor can effectively maintain the voltage at the required level during the test, and the current can break through the current limit of the direct current power supply to achieve higher current level. The invention adjusts the bad conditions in different applications by controlling the switching speed of the MOSFET, and has wider application range. The invention can realize the testing of the surge current of the diode, the testing of the turn-on loss and the turn-off loss, the research of the relation between the junction capacitance and the limit of the diode and the research of the influence of the parasitic inductance on the limit parameter of the diode, and has strong practicability.
In summary, the present invention provides a PCB, a diode characteristic testing system and a method thereof, including: the device comprises a power switch tube, an adjustable loop resistor, an adjustable main loop inductor, an adjustable power module, a driving signal generation module, a diode to be tested and an adjustable diode junction capacitor; one end of the power switch tube is connected with the anode of the power module through the loop resistor and the main loop inductor in sequence, and the other end of the power switch tube is connected with the cathode of the power module; the driving signal generating module is connected to the driving end of the power switch tube and provides a driving signal for the power switch tube; the cathode of the diode to be tested is connected with the anode of the power module, and the anode of the diode to be tested is connected with the connection node of the loop resistor and the main loop inductor; and the diode junction capacitor is connected in parallel with two ends of the diode to be tested and used for adjusting the size of the diode junction capacitor. The PCB, the diode characteristic test system and the method can greatly save the test time and cost, and the operation process is simple and easy to implement; the influence of parasitic inductance, additional impedance and the like on an experimental test result is prevented, and the accuracy is high; the current limit of a direct current power supply can be broken through, and a higher current level is achieved; the device can be adjusted in different severe conditions in different applications, and has wider application range; the method can realize the testing of the surge current of the diode, the testing of the turn-on loss and the turn-off loss, the research of the relation between the junction capacitance and the limit of the diode and the research of the influence of the parasitic inductance on the limit parameters of the diode, and has strong practicability. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (13)
1. A diode characterization test system, characterized in that the diode characterization test system comprises at least:
the device comprises a power switch tube, an adjustable loop resistor, an adjustable main loop inductor, an adjustable power module, a driving signal generation module, a diode to be tested and an adjustable diode junction capacitor;
one end of the power switch tube is connected with the anode of the power module through the loop resistor and the main loop inductor in sequence, and the other end of the power switch tube is connected with the cathode of the power module;
the driving signal generating module is connected to the driving end of the power switch tube and provides a driving signal for the power switch tube;
the cathode of the diode to be tested is connected with the anode of the power module, and the anode of the diode to be tested is connected with the connection node of the loop resistor and the main loop inductor;
and the diode junction capacitor is connected in parallel with two ends of the diode to be tested and used for adjusting the size of the diode junction capacitor.
2. The diode characteristic testing system of claim 1, wherein: the power supply module comprises an energy storage capacitor, a switch and a first direct current power supply; the switch is connected with the first direct-current power supply in series, the energy storage capacitor is connected with two ends of a series structure of the switch and the first direct-current power supply in parallel, and the energy storage capacitor provides power supply voltage for the diode characteristic testing system.
3. The diode characteristic testing system according to claim 2, wherein: the power module further comprises a current-limiting resistor, and the current-limiting resistor is connected in series in a series structure of the switch and the first direct-current power supply.
4. The diode characteristic testing system according to claim 1, wherein: the driving signal generating module is driven by a discrete device or an integrated IC (integrated circuit) and generates a driving signal with adjustable driving speed.
5. The diode characteristic test system according to claim 1 or 4, wherein: the driving signal generating unit comprises a signal generator, a first resistor, an NPN triode, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a first PNP triode, a second PNP triode, a diode and a second direct-current power supply;
a collector of the NPN triode is connected with the second direct-current power supply through the first resistor, an emitter of the NPN triode is grounded through the second resistor, and a base of the NPN triode is connected with the output end of the signal generator through the third resistor;
the emitter of the first PNP triode is connected with the second direct-current power supply, the collector of the first PNP triode is grounded through the fourth resistor, and the base of the first PNP triode is connected with the collector of the NPN triode;
the anode of the diode is connected with the collector of the first PNP triode through the fifth resistor, and the cathode of the diode is connected with the emitter of the second PNP triode and outputs a driving signal;
and the collector electrode of the second PNP triode is grounded, and the base electrode of the second PNP triode is connected with the collector electrode of the first PNP triode.
6. The diode characteristic testing system of claim 1, wherein: the driving signal generating unit is a push-pull topology drive, an optocoupler drive or a transformer drive.
7. A PCB circuit board, comprising at least:
a substrate, and the diode characteristic testing system according to any one of claims 1 to 6 disposed on the substrate.
8. The PCB circuit board of claim 7, wherein: the PCB is provided with a hollow area, and the hollow area is used for arranging a current clamp to realize current detection.
9. A diode characteristic testing method implemented based on the diode characteristic testing system according to any one of claims 1 to 6, wherein the diode characteristic testing method at least comprises:
setting power supply voltage and various parasitic parameters in the diode characteristic test system according to actual application conditions;
providing a first driving pulse, switching on the power switch tube, charging a main loop inductor by the power supply voltage, turning off the power switch tube after the first driving pulse is ended, allowing current on the main loop inductor to follow current through the diode to be tested, generating a first current peak at the turn-on time of the diode to be tested, and obtaining turn-on loss of the diode to be tested based on the first current peak and the voltage drop of the diode to be tested;
and providing a second driving pulse, switching on the power switch tube, superposing the reverse recovery current of the diode to be tested and the current of the main loop inductor to generate a second current peak, and obtaining the turn-off loss of the diode to be tested based on the second current peak and the voltage drop of the diode to be tested.
10. A diode characteristic testing method implemented based on the diode characteristic testing system according to any one of claims 1 to 6, wherein the diode characteristic testing method at least comprises:
setting power supply voltage and various parasitic parameters in the diode characteristic test system according to actual application conditions;
and providing a first driving pulse, switching on the power switch tube, charging the main loop inductor by the power supply voltage, finishing the first driving pulse, switching off the power switch tube, and allowing the current on the main loop inductor to follow the current through the diode to be tested to obtain the maximum value of the surge current.
11. The diode characteristic test method according to claim 9 or 10, characterized in that: the method for setting the power supply voltage in the diode characteristic test system comprises the following steps: setting a first direct current power supply to be required test voltage, switching on a switch, charging an energy storage capacitor by the first direct current power supply until the energy storage capacitor reaches the required voltage, switching off the switch, and providing the power voltage by the energy storage capacitor.
12. The diode characteristic test method according to claim 9 or 10, characterized in that: and adjusting the starting time of the first driving pulse to enable the current on the main loop inductor to reach a preset current.
13. The diode characteristic test method of claim 9 or 10, wherein: and adjusting the size of the junction capacitance or the parasitic inductance to obtain the relation between the junction capacitance or the parasitic inductance and the limit of the diode to be tested.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110587047.2A CN115407171A (en) | 2021-05-27 | 2021-05-27 | PCB (printed circuit board), and diode characteristic testing system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110587047.2A CN115407171A (en) | 2021-05-27 | 2021-05-27 | PCB (printed circuit board), and diode characteristic testing system and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115407171A true CN115407171A (en) | 2022-11-29 |
Family
ID=84155039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110587047.2A Pending CN115407171A (en) | 2021-05-27 | 2021-05-27 | PCB (printed circuit board), and diode characteristic testing system and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115407171A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115754650A (en) * | 2023-01-10 | 2023-03-07 | 迈思普电子股份有限公司 | Diade-IFSM-Tj test fixture |
| CN118092858A (en) * | 2024-04-28 | 2024-05-28 | 南京信息工程大学 | Product operation circuit capable of adjusting fractional power |
-
2021
- 2021-05-27 CN CN202110587047.2A patent/CN115407171A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115754650A (en) * | 2023-01-10 | 2023-03-07 | 迈思普电子股份有限公司 | Diade-IFSM-Tj test fixture |
| CN118092858A (en) * | 2024-04-28 | 2024-05-28 | 南京信息工程大学 | Product operation circuit capable of adjusting fractional power |
| CN118092858B (en) * | 2024-04-28 | 2024-06-28 | 南京信息工程大学 | Product operation circuit capable of adjusting fractional power |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN115407171A (en) | PCB (printed circuit board), and diode characteristic testing system and method | |
| WO2016045644A1 (en) | Bus bar current control circuit, constant-current driving controller and led light source | |
| CN114884350A (en) | Load state detection circuit and power supply chip | |
| CN212008817U (en) | Active MOSFET voltage clamping circuit and double-pulse test circuit | |
| CN102064681B (en) | Switch power supply output overvoltage protection circuit | |
| US4362955A (en) | Current boost circuit for a pulse generator output stage | |
| CN112332637A (en) | Adjustable PWM drive control circuit | |
| CN203242917U (en) | A pulse semiconductor laser device driving circuit based on an avalanche transistor | |
| CN109752638B (en) | Device and method for continuously measuring output curve of IGBT (insulated Gate Bipolar transistor) chip | |
| CN211701851U (en) | Switch power supply | |
| CN113030608B (en) | Power device flow equalizing characteristic evaluation experimental device | |
| CN111130321A (en) | Single-power-supply negative-voltage power switch tube driving circuit | |
| CN212210492U (en) | Low-cost power supply reverse connection protection circuit | |
| CN205430039U (en) | Many level drive device | |
| CN212969038U (en) | Overvoltage protection circuit and electronic equipment | |
| CN114785098A (en) | Drive circuit and power supply chip | |
| US20050035795A1 (en) | Circuit for optimizing zener diode bias current | |
| CN116840667A (en) | Multi-pulse test circuit and multi-pulse test method | |
| CN110932528A (en) | Self-powered control circuit and control method and switching power supply circuit | |
| CN101726649B (en) | Signal detection circuit, emergency power switching device and emergency light | |
| CN111614073A (en) | Low-cost power supply reverse connection protection circuit | |
| CN221199770U (en) | Single power supply circuit for bridge type power module reverse bias test | |
| CN212364415U (en) | Alternating current zero-crossing detection circuit and chip | |
| CN216819813U (en) | Frequency duty ratio adjustable broadband regulating circuit and electronic equipment | |
| CN221528809U (en) | Testing system of power device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |