CN116466137A - High-precision GaN HEMT dynamic resistance measuring circuit without clamping circuit - Google Patents
High-precision GaN HEMT dynamic resistance measuring circuit without clamping circuit Download PDFInfo
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- CN116466137A CN116466137A CN202310253421.4A CN202310253421A CN116466137A CN 116466137 A CN116466137 A CN 116466137A CN 202310253421 A CN202310253421 A CN 202310253421A CN 116466137 A CN116466137 A CN 116466137A
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- 238000012360 testing method Methods 0.000 claims abstract description 66
- 238000005259 measurement Methods 0.000 claims abstract description 25
- 239000000523 sample Substances 0.000 claims description 21
- 230000001939 inductive effect Effects 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 5
- 238000011084 recovery Methods 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 2
- 230000008859 change Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention belongs to the technical field of power device testing, and particularly relates to a high-precision GaN HEMT dynamic resistance measuring circuit without a clamping circuit. By providing the measuring circuit in the test circuit, the measuring circuit only measures the drain-source voltage when the device is conducted, and no extra other large voltage drop exists, so that the measurement of the conduction voltage drop of the device is more accurate, and the measurement precision of the device is met; through the arrangement that load part is straight-insert type device in this circuit, can change according to test condition, test standard, three component also can freely make up according to the test demand to satisfy the requirement of different operating modes, no matter what operating mode test to the device, test circuit all need not adjust, only need carry out the device to load circuit according to the test demand, can realize the dynamic resistance test of the full power range of device.
Description
Technical Field
The invention belongs to the technical field of power device testing, and particularly relates to a high-precision GaN HEMT dynamic resistance measuring circuit without a clamping circuit.
Background
In a power electronic system, the on-resistance of the GaN HEMT changes along with the change of working time and state;
at this time, the dynamic resistance of the devices in a plurality of periods needs to be measured in the test, and the test circuit needs to be adjusted to perform specific test operation, so that the overall test efficiency is affected; meanwhile, the measurement circuit has the advantages that the measurement precision of the oscilloscope is inversely proportional to the measurement range, so that the source-drain voltage difference between the turn-off time and the turn-on time of the device is required to be ensured to be smaller when the source-drain voltage of the device is measured, the measurement precision of the original device turn-on voltage drop is not good.
Therefore, there is a need to provide a high-precision GaN HEMT dynamic resistance measurement circuit without a clamp circuit, which effectively improves the above problems.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a high-precision GaN HEMT dynamic resistance measuring circuit without a clamping circuit, which has the characteristics of wide testing range, small power consumption and high precision.
In order to achieve the above purpose, the present invention provides the following technical solutions: a high-precision GaN HEMT dynamic resistance measuring circuit without a clamping circuit comprises a direct-current power supply, an inductive load L, a resistance load R, a protection diode D, a device to be measured, an auxiliary switch, an in-phase driving, a testing probe and a PWM signal module; the positive electrode and the negative electrode of the direct current power supply are connected with a capacitor C1, the cathodes of an inductive load L, a resistive load R and a protection diode D are connected with the positive electrode of the direct current power supply, the drain end of a device to be tested is electrically connected with the inductive load L, the resistive load R and the anode of the protection diode D, the grid end of the device to be tested is connected with in-phase driving, the source end of an auxiliary switch is connected with the inductive load L, the resistive load R and the other end of the protection diode D and is connected with a test probe, and the test probe is electrically connected with the source end of the device to be tested; the PWM signal module is used for generating a pulse signal for driving the device to be tested.
As a preferable technical scheme of the high-precision GaN HEMT dynamic resistance measurement circuit without the clamp circuit, an inductive load L, a resistive load R and a protection diode D form a load component.
As a preferable technical scheme of the high-precision GaN HEMT dynamic resistance measurement circuit without the clamp circuit, the load component comprises an inductive load L, a resistive load R and a protection diode D which are all direct-insertion devices.
As a preferable technical scheme of the high-precision GaN HEMT dynamic resistance measuring circuit without the clamp circuit, the auxiliary switch, the in-phase driving and the testing probe form a testing related circuit.
As a preferable technical scheme of the high-precision GaN HEMT dynamic resistance measuring circuit without the clamp circuit, a testing probe is added with a switching device which is in phase with the switching state of the device to be tested on the drain electrode of the device to be tested, so as to assist the switch to be conducted.
As a preferable technical scheme of the high-precision GaN HEMT dynamic resistance measuring circuit without the clamp circuit, a direct current power supply is provided from the outside, and the working voltage range of the direct current power supply is 1-650V.
As the preferable technical scheme of the high-precision GaN HEMT dynamic resistance measuring circuit without the clamp circuit, the high-precision GaN HEMT dynamic resistance measuring circuit without the clamp circuit does not contain the clamp circuit, and the power output by a power supply to a load is reflowed through a diode, so that energy recovery is realized.
Compared with the prior art, the invention has the beneficial effects that: when the device is used, the measuring circuit is provided in the testing circuit, and only the drain-source voltage of the device is measured by the measuring circuit, so that no extra other large voltage drop exists, the measurement of the device conduction voltage drop is more accurate, and the device measurement precision is met;
meanwhile, through the arrangement that the load parts in the circuit are all direct-insert type devices, the three elements can be exchanged according to test conditions and test standards, and can be freely combined according to test requirements to meet the requirements of different working conditions, no matter what working conditions of the devices are tested, the test circuit is not required to be adjusted, the devices are only required to be carried out on the load circuits according to the test requirements, and the dynamic resistance test of the devices in the full withstand voltage range and the full power range can be realized.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a schematic diagram of a high-precision GaN HEMT dynamic resistance measurement circuit without a clamp circuit;
FIG. 2 is a schematic diagram of the working waveform of the high-precision GaN HEMT dynamic resistance measuring circuit without the clamping circuit.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Examples
Referring to fig. 1 and 2, the present invention provides the following technical solutions: a high-precision GaN HEMT dynamic resistance measuring circuit without a clamp circuit comprises a direct current power supply, a load component (an inductive load L, a resistive load R and a protection diode D which are connected in parallel), a device to be tested, a test probe related circuit (comprising an auxiliary switch (namely a switch S1), an in-phase driving and test probe) and a PWM signal module;
the positive electrode and the negative electrode of the direct current power supply are connected with a capacitor C1, the cathodes of an inductive load L, a resistive load R and a protection diode D are connected with the positive electrode of the direct current power supply, the drain end of a device to be tested is electrically connected with the inductive load L, the other end of the resistive load R and the anode of the protection diode D, the grid end of the device to be tested is connected with in-phase driving, the source end of an auxiliary switch is connected with the inductive load L and the other end of the resistive load R, and is connected with the anode of the protection diode D and is connected with a test probe, and the test probe is electrically connected with the source end of the device to be tested;
the direct current power supply is provided from the outside, the working voltage range of the direct current power supply is 1-650V, the voltage requirements of the GaN HEMT under different test conditions can be met, the measurement of dynamic resistance of the GaN HEMT can be realized in the whole voltage-resistant range, the test range is wide, and the simulation of the actual state is more complete.
The capacitor C1 beside the direct current power supply is a decoupling capacitor, so that the influence of the direct current power supply on the test circuit can be reduced.
The inductance load L, the resistance load R and the protection diode D form a load component, wherein the inductance load L is used for testing the dynamic resistance of the device to be tested under the condition of linearly increasing the current load, the resistance load R can be used for measuring the dynamic resistance of the device to be tested under the condition of constant current, and the protection diode is used for protecting the device to be tested when the power supply voltage exceeds the testing range of the device. The three elements of the load component are all direct-insert devices, can be exchanged according to test conditions and test standards, and can be freely combined according to test requirements to meet the requirements of different working conditions;
no matter what working conditions of the device are tested, the test circuit is not required to be adjusted, and the device is only required to be subjected to the load circuit according to the test requirement, so that the dynamic resistance test of the device in the full withstand voltage range and the full power range can be realized.
The test related circuit is characterized in that a test probe of the test related circuit is provided with a switching device with the same phase as the switching state of the device to be tested, so that when the device to be tested is turned on, an auxiliary switch is turned on, and when the device to be tested is turned off, the auxiliary switch is turned off, wherein the auxiliary switch, the same-phase driving and the test probe form the test related circuit;
therefore, when the device is turned on, the test probe tests the drain-source voltage of the device to be tested, and when the device is turned off, the test probe detects that the signal is empty, namely zero voltage;
the PWM module is used for generating pulse signals for driving the device to be tested, and the pulse signals can be subjected to quantity and pulse width adjustment according to test requirements.
Meanwhile, the measuring circuit does not need a clamping circuit, the power output to the load by the power supply can flow back through the diode, so that the energy recovery is realized, the testing efficiency is improved, and the power consumption is reduced.
The working principle and the using flow of the invention are as follows: in the using process of the invention, the dynamic resistance test shows that the test waveform is shown in figure 2 in light load;
when the PWM signal is reduced, the auxiliary switch is turned off after the device to be tested is turned off, the test probe is not connected into the test loop, the probe is tested to be zero voltage, and a path from the direct current power supply to the load module and then to the device to be tested, the direct current power supply and the load diode is formed. The direct current power supply charges parasitic capacitance Cds of the device to be tested through the load module, and when the device to be tested is charged to be larger than the difference value between the conduction voltage drop of the load diode and the power supply voltage, the diode is conducted, so that current flows back to the power supply, and the power consumption of the test circuit is reduced;
after the PWM signal rises, the device to be tested and the auxiliary switch are simultaneously opened, at the moment, the test probe is connected into the test loop to directly measure the drain-source voltage of the device to be tested, the Vds of the device to be tested is tested to drop sharply, and the device passes through the current;
in the stage that PWM is high, vds of the device to be measured divided by current Ids of the device is the on-resistance of the device, the on-resistance of the device in a plurality of periods is measured, the dynamic resistance of the device to be measured is obtained, and corresponding measurement operation can be safely and efficiently completed through the steps.
Finally, it should be noted that: the foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. The high-precision GaN HEMT dynamic resistance measuring circuit without the clamp circuit is characterized by comprising a direct-current power supply, an inductive load L, a resistance load R, a protection diode D, a device to be measured, an auxiliary switch, an in-phase driving and testing probe and a PWM signal module;
the positive electrode and the negative electrode of the direct current power supply are connected with a capacitor C1, the cathodes of an inductive load L, a resistive load R and a protection diode D are connected with the positive electrode of the direct current power supply, the drain end of a device to be tested is electrically connected with the inductive load L, the resistive load R and the anode of the protection diode D, the grid end of the device to be tested is connected with in-phase driving, the source end of an auxiliary switch is connected with the inductive load L, the resistive load R and the other end of the protection diode D and is connected with a test probe, and the test probe is electrically connected with the source end of the device to be tested;
the PWM signal module is used for generating a pulse signal for driving the device to be tested.
2. The clamping-circuit-free high-precision GaN HEMT dynamic resistance measurement circuit according to claim 1, wherein the clamping-circuit-free high-precision GaN HEMT dynamic resistance measurement circuit is characterized in that: the inductive load L, the resistive load R and the protection diode D constitute a load component.
3. The clamping-circuit-free high-precision GaN HEMT dynamic resistance measurement circuit according to claim 2, wherein the clamping-circuit-free high-precision GaN HEMT dynamic resistance measurement circuit is characterized in that: the load component comprises an inductive load L, a resistive load R and a protection diode D which are all direct-insertion devices.
4. The clamping-circuit-free high-precision GaN HEMT dynamic resistance measurement circuit according to claim 1, wherein the clamping-circuit-free high-precision GaN HEMT dynamic resistance measurement circuit is characterized in that: the auxiliary switch, the in-phase driving and the test probe form a test related circuit.
5. The clamping-circuit-free high-precision GaN HEMT dynamic resistance measurement circuit according to claim 4, wherein: the drain electrode of the device to be tested is provided with a switching device which is in phase with the switching state of the device to be tested by the test probe, so as to assist the switch to be conducted.
6. The clamping-circuit-free high-precision GaN HEMT dynamic resistance measurement circuit according to claim 1, wherein the clamping-circuit-free high-precision GaN HEMT dynamic resistance measurement circuit is characterized in that: the DC power supply is externally provided, and the working voltage range of the DC power supply is 1-650V.
7. The clamping-circuit-free high-precision GaN HEMT dynamic resistance measurement circuit according to claim 1, wherein the clamping-circuit-free high-precision GaN HEMT dynamic resistance measurement circuit is characterized in that: the high-precision GaN HEMT dynamic resistance measuring circuit without the clamping circuit does not contain the clamping circuit, and the power output by the power supply to the load is reflowed through the diode, so that energy recovery is realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310253421.4A CN116466137A (en) | 2023-03-16 | 2023-03-16 | High-precision GaN HEMT dynamic resistance measuring circuit without clamping circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310253421.4A CN116466137A (en) | 2023-03-16 | 2023-03-16 | High-precision GaN HEMT dynamic resistance measuring circuit without clamping circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116466137A true CN116466137A (en) | 2023-07-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310253421.4A Pending CN116466137A (en) | 2023-03-16 | 2023-03-16 | High-precision GaN HEMT dynamic resistance measuring circuit without clamping circuit |
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| Country | Link |
|---|---|
| CN (1) | CN116466137A (en) |
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2023
- 2023-03-16 CN CN202310253421.4A patent/CN116466137A/en active Pending
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