CN109256337A - A kind of perimeter grade element eutectic welder and welding method - Google Patents
A kind of perimeter grade element eutectic welder and welding method Download PDFInfo
- Publication number
- CN109256337A CN109256337A CN201810940681.8A CN201810940681A CN109256337A CN 109256337 A CN109256337 A CN 109256337A CN 201810940681 A CN201810940681 A CN 201810940681A CN 109256337 A CN109256337 A CN 109256337A
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- eutectic
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- locating slot
- ceramic substrate
- positioning plate
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- 230000005496 eutectics Effects 0.000 title claims abstract description 70
- 238000003466 welding Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 28
- 230000007704 transition Effects 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000000919 ceramic Substances 0.000 claims abstract description 38
- 238000003825 pressing Methods 0.000 claims abstract description 20
- 238000005245 sintering Methods 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000009826 distribution Methods 0.000 claims abstract description 6
- 238000005476 soldering Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 12
- 229910000679 solder Inorganic materials 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000006071 cream Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241001133184 Colletotrichum agaves Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/203—Fluxing, i.e. applying flux onto surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/206—Cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
The present invention discloses a kind of perimeter grade element eutectic welder, including bottom plate, and bottom plate plate face is equipped with one group of rectangle locating slot, and rectangle locating slot includes the upper locating slot and lower locating slot for being connected and constituting stepped groove, and lower locating slot is for accommodating ceramic substrate；The welder further includes positioning plate and pressing plate, and positioning plate can be embedded in locating slot, one group of location hole of positioning plate plate face, location hole according to to-be-welded elements position distribution；The pressing plate bottom surface is equipped with one group of briquetting, and briquetting and location hole, which correspond, to be cooperated；It placed by pretreatment, the taking of weld tabs, substrate placements, to-be-welded elements placements, eutectic sintering, pickup, bonding transition plate, be bonded that transition plate eutectic is sintered, pickup and cleaning step are completed eutectic and welded；All bonding transition plates or semiconductor element are smooth after present invention realization welding, and height is consistent, meet Welding Testing and bonding technology requirement, and raising crin is bonded yield rate.
Description
Technical field
The present invention relates to microelectronic mounting technology field, specifically a kind of perimeter grade element eutectic welder and weldering
Connect method.
Background technique
In microelectronics assewbly technique, semiconductor chip and peripheral circuits are assembled to (such as ceramic base on desired carrier
Plate, shell etc.) realize method mainly have conducting resinl (epoxy) bonding and eutectic (eutectic) be sintered two ways.Its
In, conductive adhesive have simple process, speed it is fast, it is at low cost, can repair, low-temperature adhesion metallizes without special to die back side
It is required that the advantages that.But when product has high power requirements, since the resistivity of conductive adhesive is big, thermal coefficient is big, causes to damage
Consumption is big, and power die thermal resistance is big, and junction temperature is high, and power-performance and reliability etc. will be affected.
Therefore, in thick-film hybrid integration high-power circuit, power chip is mounted on frequently with the method for eutectic sintering
On corresponding carrier.To meet high current requirement, power chip should be bonded using crin.But in addition to power chip, due to reducing
The actual needs such as conducting resistance and the bonding of aluminium aluminium same metal are also needed using eutectic or the millimetre-sized small ruler of soldering and welding perimeter
Very little element, but for perimeter grade, that is, side length 1mm~2mm small-sized component since size is small, distribution density is high, pressurization
Eutectic device difficult design, poor feasibility, so above-mentioned small-sized component generally uses soldering and welding.
For example, since the typical carriers such as ceramic substrate can not deposit aluminum metal, but to guarantee bonding reliability, it is necessary to
It is preferential to select same metal bonding, therefore the method for being typically employed in soldering and welding copper-aluminium transition piece (aluminium layer is upward) on carrier,
The bonding interconnection of crude aluminum silk is carried out on bonding transition plate surface again, realizes the bonding of aluminium aluminium same metal.In practical operation, due to carrier
On eutectic be welded with power chip, not can be carried out soldering paste and bite, after soldering paste can only being put by hand, with hot plate carry out reflow welding come
Solder bonds transition plate.But point soldering paste cannot make solder surface smooth manually, bead height is consistent, is being heated to welding temperature
Afterwards, it is necessary to bonding transition plate be flattened using heat-resisting material one by one, and guarantee to be bonded the flatness after transition plate welding, with full
Sufficient Welding Testing and crin bonding are to the requirement of the technique of flatness, and in the welding process, due to bonding transition plate quantity compared with
It is more, while solder itself has shrinkage phenomenon that can cause to float on the transition plate on solder and move in the effect of surface tension, adjusts
When whole transition plate, it cannot guard both ends, it is exhaustive.Accordingly, it is difficult to guarantee that all bonding transition plates can be kept after welding
It is smooth.The out-of-flatness of bonding transition plate will lead to bonding again, which does over again, increased significantly, or even partial circuit occurs because same position returns
Work number reaches to be scrapped beyond national military standard relevant regulations twice.
In addition, in technological design, to improve product power-performance both reliabilities, perimeter grade small size transistor
Core generally also uses soldering and welding technique, but since die-size is small, quantity is more, and soldering and welding exists and bonding transition plate
Same problem.
Summary of the invention
The purpose of the present invention is to provide a kind of perimeter grade element eutectic welder and welding methods, by this dress
Set and may be implemented after welding that all bonding transition plates or semiconductor element are smooth with method, height is consistent, meet Welding Testing with
Bonding technology requirement improves crin and is bonded yield rate.
The technical solution adopted by the present invention to solve the technical problems is:
A kind of perimeter grade element eutectic welder, including bottom plate, bottom plate plate face are equipped with one group of rectangle locating slot, and rectangle is fixed
Position slot includes the upper locating slot and lower locating slot for being connected and constituting stepped groove, and lower locating slot is for accommodating ceramic substrate；The weldering
Connection device further includes positioning plate and pressing plate, and positioning plate can be embedded in locating slot, one group of location hole of positioning plate plate face, positioning
Hole according to to-be-welded elements position distribution；The pressing plate bottom surface is equipped with one group of briquetting, and briquetting and location hole, which correspond, to be cooperated.
Further, the positioning plate plate face is additionally provided with transition plate opening.
The present invention also provides a kind of perimeter grade element eutectic welding methods, comprising the following steps:
S1, pretreatment,
Grinding process is carried out to ceramic substrate；Grinding process, alcohol ultrasonic cleaning or plasma cleaning are carried out to weld tabs；It is right simultaneously
Grade element eutectic welder described in claim 1 is cleaned by ultrasonic；
S2, weld tabs are taken,
Weld tabs is cut into and is adapted with chip size to be welded；
S3, substrate are placed,
Ceramic substrate is laid flat described in claim 1 in lower locating slot, then the placement positioning plate again on ceramic substrate；
S4, to-be-welded elements are placed,
Pad center is corresponded in ceramic substrate and places weld tabs, then chip to be welded is placed on weld tabs center, then places pressing plate,
The briquetting of pressing plate is corresponding with chip to be welded；
S5, eutectic sintering,
The weld assembly that step S4 is assembled moves into atmosphere eutectic furnace, carries out eutectic weldering according to eutectic weldering program；
S6, pickup,
The weld assembly for completing eutectic welding is taken out out of atmosphere eutectic furnace, successively unloads lower platen, positioning plate, ceramic substrate；
The pre- upper tin of S7, pad,
The location point soldering paste for needing welding transition piece on ceramic substrate using the modes such as Manual electric welding cream or soldering paste instillation, using heat
Plate reflow welding or the mode of Reflow Soldering are attached to solder paste melts on pad；
S8, bonding transition plate are placed,
The ceramic substrate of pre- upper tin is lain in lower locating slot, then the placement positioning plate again on ceramic substrate；By key
It closes transition plate to be placed on one by one in the opening of positioning plate, then places pressing plate；
S9, bonding transition plate eutectic sintering,
The weld assembly that step S7 is assembled moves into atmosphere eutectic furnace, carries out eutectic weldering according to eutectic weldering program；Make ceramics
Scolding tin on substrate is pre- melts again, and the bonding transition plate being placed on it makes bonding transition plate keep smooth under the action of pressing plate；
S10, pickup,
The weld assembly for completing eutectic welding is taken out out of atmosphere eutectic furnace, successively unloads lower platen, positioning plate, ceramic substrate；
S11, cleaning,
The ceramic substrate that atmosphere eutectic is completed is cleaned, scaling powder and fifth wheel are removed.
The beneficial effects of the present invention are:
One, all bonding transition plates or semiconductor element integrally heat, and integral solder, consistency is good, and hot plate reflow soldering is avoided to weld
The shortcomings that transition plate cannot guard both ends is adjusted when connecing；
Two, by the pressurizing device para-linkage transition plate or semiconductor element entire pressurisation that specially design, in bonding transition plate and
In the case that semiconductor element thickness is almost the same, make transition plate or chip high during melting pressurization again using solder thickness
Degree is consistent, and all bonding transition plates or semiconductor element are smooth after final realization welding, and height is consistent, meets Welding Testing
With bonding technology requirement, improves crin and be bonded yield rate；
Three, positioning plate is positioned, and is punched and is made using ceramic substrate, the eutectic of work is added relative to common graphite material machine
Tooling, positioning is more accurate, and without the evolution of the impurity such as graphite dust；
Four, positioning plate reserves the position of opening of power chip, and it is complete not only to can use the position of opening using identical positioning plate
At the power chip positioning eutectic welding of higher temperature, and since positioning plate has reserved power chip position of opening, because of weldering
It connects and the power chip of protrusion nor affects on small size transition plate or semiconductor element that welding effect below carries out lower temperature
Welding；That is the design of the positioning plate, which can satisfy, completes successively secondary eutectic welding using identical positioning plate.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples:
Fig. 1 is structural schematic diagram of the invention；
Fig. 2 is the top view of bottom plate of the present invention；
Fig. 3 is the A-A cross-sectional view of Fig. 2；
Fig. 4 is the schematic diagram of positioning plate of the present invention；
Fig. 5 is the schematic diagram of pressing plate of the present invention；
Fig. 6 is the bottom view of Fig. 5.
Specific embodiment
In conjunction with shown in Fig. 1~3, the present invention provides a kind of perimeter grade element eutectic welder, including bottom plate 1, bottom
1 plate face of plate is equipped with one group of rectangle locating slot, and rectangle locating slot includes the be connected upper locating slot 2a for constituting stepped groove and lower positioning
Nine rectangle locating slots in matrix distribution are arranged in slot 2b, the present embodiment.Lower locating slot 2b is for accommodating ceramic substrate 3；In conjunction with
Shown in Fig. 4~6, the welder further includes positioning plate 4 and pressing plate 5, and positioning plate 4 can be embedded in locating slot 2a, fixed
Position plate 4 plate face, one group of location hole 6, location hole 6 according to chip to be welded position distribution；4 plate face of positioning plate is additionally provided with transition plate
Opening 7；Location hole 6 and transition plate opening 7 are all made of laser boring；5 bottom surface of pressing plate is equipped with one group of briquetting 8, briquetting 8 and fixed
Position hole 6 corresponds cooperation.
The present invention also provides a kind of perimeter grade element eutectic welding methods, comprising the following steps:
S1, pretreatment,
Grinding process is carried out to ceramic substrate；Grinding process, alcohol ultrasonic cleaning or plasma cleaning are carried out to weld tabs；It is right simultaneously
Perimeter grade element eutectic welder is cleaned by ultrasonic；
S2, weld tabs are taken,
Both hands put on clean latex finger cot, and it is identical as chip size to be welded that SnAg weld tabs is cut into length and width dimensions with knife blade
Or slightly smaller weld tabs, it is put into and contains in disk；
S3, substrate are placed,
Ceramic substrate 3 is lain in lower locating slot 2b, then the placement positioning plate 4 again on ceramic substrate 3；
S4, to-be-welded elements are placed,
Pad center is corresponded in ceramic substrate and places weld tabs, then chip to be welded is placed on weld tabs center, then places pressing plate
5, the briquetting 8 of pressing plate 5 is corresponding with chip to be welded；
S5, eutectic sintering,
The weld assembly that step S4 is assembled moves into atmosphere eutectic furnace, carries out eutectic weldering according to eutectic weldering process；Eutectic weldering
Can be carried out by following process: be evacuated down to 5Pa → inflated with nitrogen → preheating (50 DEG C/min) → it is heated to peak value (20 DEG C/min)
→ peak temperature holding 50s → holding low discharge nitrogen charging (2l/min) → peak temperature holding 150s → nitrogen charging cooling (50 DEG C/
Min)；
S6, pickup,
The weld assembly for completing eutectic welding is taken out out of atmosphere eutectic furnace, successively unloads lower platen, positioning plate, ceramic substrate；
The pre- upper tin of S7, pad,
The location point soldering paste for needing welding transition piece on ceramic substrate using the modes such as Manual electric welding cream or soldering paste instillation, using heat
Plate reflow welding or the mode of Reflow Soldering are attached to solder paste melts on pad；
S8, bonding transition plate are placed,
The ceramic substrate of pre- upper tin is lain in lower locating slot 2b, then the placement positioning plate 4 again on ceramic substrate；It will
Bonding transition plate is placed on one by one in the transition plate opening 7 of positioning plate, then places pressing plate 5；
S9, bonding transition plate eutectic sintering,
The weld assembly that step S7 is assembled moves into atmosphere eutectic furnace, carries out eutectic weldering according to eutectic weldering process；Make ceramics
Scolding tin on substrate is pre- melts again, and the bonding transition plate being placed on it makes bonding transition plate keep smooth under the action of pressing plate；
Eutectic weldering can be carried out by following process: be evacuated down to 5Pa → inflated with nitrogen → preheating (50 DEG C/min) → it is heated to peak value (20
DEG C/min) → peak temperature holding 50s → holding low discharge nitrogen charging (2l/min) → peak temperature holding 150s → nitrogen charging cooling
(50 DEG C/min)；
S10, pickup,
The weld assembly for completing eutectic welding is taken out out of atmosphere eutectic furnace, successively unloads lower platen, positioning plate, ceramic substrate；
S11, cleaning,
The ceramic substrate that atmosphere eutectic is completed is cleaned, scaling powder and fifth wheel are removed.
Step S1 to S6 is that the atmosphere eutectic of power chip welds, and applicable eutectic solder fusing point should be higher than that conventional solder(ing) paste
30 DEG C of material melting point or more, wherein Sn62Pb36Ag2 type soldering paste is about 183 DEG C of fusing points.
The above described is only a preferred embodiment of the present invention, being not intended to limit the present invention in any form；Appoint
What those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the side of the disclosure above
Method and technology contents make many possible changes and modifications to technical solution of the present invention, or are revised as the equivalent reality of equivalent variations
Apply example.Therefore, anything that does not depart from the technical scheme of the invention according to the technical essence of the invention do above embodiments
Any simple modification, equivalent replacement, equivalence changes and modification, all of which are still within the scope of protection of the technical scheme of the invention.
Claims (3)
1. a kind of perimeter grade element eutectic welder, which is characterized in that including bottom plate, bottom plate plate face is equipped with one group of rectangle
Locating slot, rectangle locating slot include the upper locating slot and lower locating slot for being connected and constituting stepped groove, and lower locating slot is for accommodating pottery
Porcelain substrate；The welder further includes positioning plate and pressing plate, and positioning plate can be embedded in locating slot, positioning plate plate face one
Group location hole, location hole according to to-be-welded elements position distribution；The pressing plate bottom surface is equipped with one group of briquetting, briquetting and location hole
Correspond cooperation.
2. a kind of perimeter grade element eutectic welder according to claim 1, which is characterized in that the positioning plate
Plate face is additionally provided with transition plate opening.
3. a kind of perimeter grade element eutectic welding method, which comprises the following steps:
S1, pretreatment,
Grinding process is carried out to ceramic substrate；Grinding process, alcohol ultrasonic cleaning or plasma cleaning are carried out to weld tabs；It is right simultaneously
Grade element eutectic welder described in claim 1 is cleaned by ultrasonic；
S2, weld tabs are taken,
Weld tabs is cut into and is adapted with chip size to be welded；
S3, substrate are placed,
Ceramic substrate is laid flat described in claim 1 in lower locating slot, then the placement positioning plate again on ceramic substrate；
S4, to-be-welded elements are placed,
Pad center is corresponded in ceramic substrate and places weld tabs, then chip to be welded is placed on weld tabs center, then places pressing plate,
The briquetting of pressing plate is corresponding with chip to be welded；
S5, eutectic sintering,
The weld assembly that step S4 is assembled moves into atmosphere eutectic furnace, carries out eutectic weldering according to eutectic weldering program；
S6, pickup,
The weld assembly for completing eutectic welding is taken out out of atmosphere eutectic furnace, successively unloads lower platen, positioning plate, ceramic substrate；
The pre- upper tin of S7, pad,
The location point soldering paste for needing welding transition piece on ceramic substrate in such a way that Manual electric welding cream or soldering paste instil, using heat
Plate reflow welding or the mode of Reflow Soldering are attached to solder paste melts on pad；
S8, bonding transition plate are placed,
Ceramic substrate is laid flat described in claim 1 in lower locating slot, then the placement positioning plate again on ceramic substrate；It will bonding
Transition plate is placed on one by one in the opening of positioning plate, then places pressing plate；
S9, bonding transition plate eutectic sintering,
The weld assembly that step S7 is assembled moves into atmosphere eutectic furnace, carries out eutectic weldering according to eutectic weldering program；
S10, pickup,
The weld assembly for completing eutectic welding is taken out out of atmosphere eutectic furnace, successively unloads lower platen, positioning plate, ceramic substrate；
S11, cleaning,
The ceramic substrate that atmosphere eutectic is completed is cleaned, scaling powder and fifth wheel are removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810940681.8A CN109256337B (en) | 2018-08-17 | 2018-08-17 | Eutectic welding device and method for millimeter-scale elements with circumferences |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810940681.8A CN109256337B (en) | 2018-08-17 | 2018-08-17 | Eutectic welding device and method for millimeter-scale elements with circumferences |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109256337A true CN109256337A (en) | 2019-01-22 |
| CN109256337B CN109256337B (en) | 2020-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810940681.8A Active CN109256337B (en) | 2018-08-17 | 2018-08-17 | Eutectic welding device and method for millimeter-scale elements with circumferences |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110587064A (en) * | 2019-09-30 | 2019-12-20 | 北京无线电测量研究所 | MCM eutectic brazing tool and eutectic brazing process |
| CN110666269A (en) * | 2019-10-11 | 2020-01-10 | 华东光电集成器件研究所 | Combined eutectic welding device and using method thereof |
| CN111180318A (en) * | 2020-01-06 | 2020-05-19 | 贵州振华风光半导体有限公司 | Method for improving bonding quality in integrated circuit by using in-situ bonding technology |
| CN112139623A (en) * | 2020-08-14 | 2020-12-29 | 武汉光迅科技股份有限公司 | Optical device assembly, reflow soldering equipment of optical device assembly and reflow soldering process method |
| CN112289695A (en) * | 2020-09-22 | 2021-01-29 | 中国电子科技集团公司第二十九研究所 | Universal eutectic device and eutectic method for multi-weldment automatic eutectic |
| CN114309854A (en) * | 2021-12-28 | 2022-04-12 | 中国科学院空天信息创新研究院 | Method and tool suitable for integrated brazing of multiple substrates of box body with two-sided open cavity |
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