JP5131205B2 - Power module substrate manufacturing method - Google Patents

Power module substrate manufacturing method

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JP5131205B2
JP5131205B2 JP2009004495A JP2009004495A JP5131205B2 JP 5131205 B2 JP5131205 B2 JP 5131205B2 JP 2009004495 A JP2009004495 A JP 2009004495A JP 2009004495 A JP2009004495 A JP 2009004495A JP 5131205 B2 JP5131205 B2 JP 5131205B2
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ceramic substrate
metal plate
power module
brazing
substrate
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JP2010165720A (en
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雅博 柳田
敏之 長瀬
慎介 青木
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Mitsubishi Materials Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Products (AREA)
  • Structure Of Printed Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

本発明は、大電流、高電圧を制御する半導体装置に用いられるパワーモジュール用基板の製造方法に関する。   The present invention relates to a method for manufacturing a power module substrate used in a semiconductor device that controls a large current and a high voltage.

一般に、半導体素子の中でも電力供給のためのパワーモジュールは発熱量が比較的高いため、このパワーモジュール用基板としては、例えば特許文献１に示されるように、ＡｌＮ、Ａｌ２Ｏ３、Ｓｉ３Ｎ４、ＳｉＣ等からなるセラミックス基板上にアルミニウム板等の金属板をＡｌ−Ｓｉ系等のろう材を介して接合させたものが用いられている。この金属板は、後工程のエッチング処理によって所望パターンの回路が形成されて回路層となる。そして、エッチング後は、この回路層の表面にはんだ材を介して電子部品（半導体チップ等のパワー素子）が搭載され、パワーモジュールとなる。 In general, a power module for supplying power among semiconductor elements has a relatively high calorific value. As this power module substrate, for example, as shown in Patent Document 1, AlN, Al 2 O 3 , Si 3 N 4. A metal plate such as an aluminum plate joined to a ceramic substrate made of SiC or the like via a brazing material such as an Al-Si type is used. This metal plate becomes a circuit layer by forming a circuit having a desired pattern by an etching process in a later step. After etching, an electronic component (power element such as a semiconductor chip) is mounted on the surface of the circuit layer via a solder material to form a power module.

また、この金属板は、例えば特許文献２に示されるように、箔状のろう材をセラミックス基板と金属板との間に介在させて高温状態で積層方向に加圧することにより、溶融したろう材によってセラミックス基板に接合される。   In addition, as shown in Patent Document 2, for example, this metal plate is a molten brazing material by interposing a foil-like brazing material between the ceramic substrate and the metal plate and pressing in the stacking direction in a high temperature state. To be bonded to the ceramic substrate.

特開２００４−３５６５０２号公報JP 2004-356502 A 特開２００７−５３３４９号公報JP 2007-53349 A

上述のようにセラミックス基板と金属板とを接合した場合、ろう材の量が不足すると、金属板とセラミックス基板との間でろう材が不足する箇所が生じたり、セラミックス基板の反りによって接合部分が剥離したりして、後工程で形成した回路層がはがれる等の問題が生じるおそれがある。また、金属板全面にろう材が付着せず、セラミックス基板に対して金属板を確実に接合できないおそれがある。さらに、接合が十分でない場合、温度変化を繰り返す温度サイクル条件下において剥離が生じてしまう場合もある。   When the ceramic substrate and the metal plate are bonded as described above, if the amount of the brazing material is insufficient, a portion where the brazing material is insufficient between the metal plate and the ceramic substrate is generated, or the bonded portion is caused by warping of the ceramic substrate. There is a possibility that problems such as peeling off and peeling off of a circuit layer formed in a subsequent process may occur. Further, the brazing material does not adhere to the entire surface of the metal plate, and there is a possibility that the metal plate cannot be reliably bonded to the ceramic substrate. Furthermore, if bonding is not sufficient, peeling may occur under temperature cycle conditions that repeat temperature changes.

一方、十分な量のろう材を用いると、特許文献２に示されるように、溶融したろう材の余剰分がセラミックス基板および金属板の側面を経由して金属板の表面に付着し、この表面を変質させ、その後に固着される電子部品のボンディングワイヤの接着性が損なわれるという問題がある。また、余剰のろう材を除去する際にセラミックス基板が破損するおそれがある。   On the other hand, when a sufficient amount of brazing material is used, as shown in Patent Document 2, surplus of the molten brazing material adheres to the surface of the metal plate via the ceramic substrate and the side surface of the metal plate, and this surface There is a problem that the adhesion of the bonding wire of the electronic component to be fixed thereafter is impaired. In addition, the ceramic substrate may be damaged when the excess brazing material is removed.

また、それぞれの一つの角部を一致させることにより位置決めされてセラミックス基板と金属板とが接合され、さらにエッチング処理においても同様に位置決めされて回路層が形成される場合がある。セラミックス基板および金属板をこのような配置で接合する場合、これらセラミックス基板および金属板は、同様に角部を一致させることにより位置決めされた加圧板間で積層方向に加圧されながら加熱される。このとき、加圧板も同様に角部において位置決めされていることから、この角部を構成する辺縁部では加圧板、セラミックス基板および金属板の側面が面一となるため、加熱によって溶融したろう材の余剰分は、積層されたセラミックス基板および金属板から押し出されてその側面や加圧板の側面および表面にも付着し、積層体の面方向および厚さ方向に突出するこぶ状に固まって、いわゆるろうこぶを形成するおそれがある。このため、エッチング処理時の積層体の位置決めが妨げられ、精密な回路層の形成が困難になるという問題が生じる。また、このようなろうこぶを除去する作業が必要となるために生産性が低下し、さらに除去時にセラミックス基板に負荷がかかるため、セラミックス基板が破損するおそれもある。   In addition, the ceramic substrate and the metal plate may be joined by positioning by aligning each one corner, and the circuit layer may be formed by the same positioning in the etching process. When the ceramic substrate and the metal plate are joined in such an arrangement, the ceramic substrate and the metal plate are similarly heated while being pressed in the stacking direction between the pressure plates positioned by matching the corners. At this time, since the pressure plate is similarly positioned at the corner portion, the side surfaces of the pressure plate, the ceramic substrate and the metal plate are flush with each other at the edge portion constituting the corner portion, so that it will be melted by heating. The surplus of the material is extruded from the laminated ceramic substrate and metal plate, adheres to the side surface and the side surface and the surface of the pressure plate, and solidifies in a protruding shape in the surface direction and thickness direction of the laminate, There is a risk of forming a so-called bump. For this reason, positioning of the laminated body at the time of an etching process is prevented, and the problem that formation of a precise circuit layer becomes difficult arises. Moreover, since the operation | work which removes such a bran is needed, productivity falls, Furthermore, since a load is applied to a ceramic substrate at the time of removal, there exists a possibility that a ceramic substrate may be damaged.

本発明は、このような事情に鑑みてなされたもので、金属板とセラミックス基板とを確実に接合でき、ろうこぶの除去作業を削減して精密な加工を可能にするパワーモジュール用基板の製造方法を提供することを目的とする。   The present invention has been made in view of such circumstances, and is capable of reliably joining a metal plate and a ceramic substrate, and manufacturing a power module substrate that enables precise processing by reducing the removal of a hump. It aims to provide a method.

本発明は、略矩形のセラミックス基板の表面に略矩形の金属板を接合する接合工程を有するパワーモジュール用基板の製造方法であって、前記接合工程は、ろう材を介在させて前記セラミックス基板と前記金属板とを積層した積層体を、前記セラミックス基板よりも大面積であってこのセラミックス基板および前記金属板全面を覆う２枚の加圧板間で加熱しながら厚さ方向に加圧する工程であり、前記接合工程において、前記加圧板、前記セラミックス基板および前記金属板の位置決めを、前記加圧板の一つの角部、前記金属板の一つの角部および前記セラミックス基板の一つの角部を一致させることにより行い、前記セラミックス基板の前記角部を構成する辺縁部近傍に、前記金属板との間にろう溜まり空間を形成するろう溜まり形成部が設けられている。   The present invention is a method of manufacturing a power module substrate having a bonding step of bonding a substantially rectangular metal plate to the surface of a substantially rectangular ceramic substrate, wherein the bonding step includes the brazing material interposed between the ceramic substrate and the ceramic substrate. It is a step of pressurizing a laminate in which the metal plate is laminated in a thickness direction while heating between two pressure plates that have a larger area than the ceramic substrate and cover the entire surface of the ceramic substrate and the metal plate. In the bonding step, the pressing plate, the ceramic substrate, and the metal plate are positioned by aligning one corner of the pressing plate, one corner of the metal plate, and one corner of the ceramic substrate. A brazing pool forming portion that forms a brazing pool space between the ceramic plate and the edge of the ceramic substrate in the vicinity of the edge portion of the ceramic substrate. It has been kicked.

この方法によれば、位置決めを行う角部を構成する辺縁部近傍にろう溜まり空間が設けられることにより、余剰のろう材がこのろう溜まり空間に保持されるので、角部の側面に余剰のろう材が付着することを抑制できる。また、ろう溜まり空間は、セラミックス基板および金属板の辺縁部近傍に設けられているので、セラミックス基板および金属板を切除することにより、容易に除去できる。   According to this method, since the brazing pool space is provided in the vicinity of the edge portion constituting the corner portion to be positioned, the surplus brazing material is held in the brazing pool space. The adhesion of the brazing material can be suppressed. Further, since the brazing pool space is provided in the vicinity of the edge portion of the ceramic substrate and the metal plate, it can be easily removed by cutting the ceramic substrate and the metal plate.

この製造方法において、前記ろう溜まり形成部は、前記セラミックス基板を貫通する貫通孔であってもよい。この場合、セラミックス基板を介在させた金属板間にろう溜まり空間が形成されるので、セラミックス基板の両面にそれぞれ金属板が積層される場合に好適である。このろう溜まり空間には、セラミックス基板の両面から生じた余剰のろう材を集めることができる。   In this manufacturing method, the brazing pool forming portion may be a through hole penetrating the ceramic substrate. In this case, a brazing pool space is formed between the metal plates with the ceramic substrate interposed therebetween, which is suitable when the metal plates are laminated on both surfaces of the ceramic substrate. In this brazing space, surplus brazing material produced from both sides of the ceramic substrate can be collected.

また、前記ろう溜まり形成部は、前記セラミックス基板の表面に設けられた凹部であってもよい。この場合、ろう溜まり空間はセラミックス基板と金属板との間に形成されるので、セラミックス基板の片面のみに金属板が積層される場合にも、余剰のろう材をろう溜まり空間に集めることができる。   The brazing pool forming portion may be a recess provided on the surface of the ceramic substrate. In this case, since the brazing space is formed between the ceramic substrate and the metal plate, excess brazing material can be collected in the brazing pool space even when the metal plate is laminated only on one side of the ceramic substrate. .

本発明のパワーモジュール用基板の製造方法によれば、ろう溜まり空間に余剰のろう材を集中させることにより、セラミックス基板および金属板の側面へのろう材の付着を抑制できるので、ろうこぶの除去作業を削減できるとともに、精密な加工による基板の製造が可能となる。   According to the method for manufacturing a power module substrate of the present invention, it is possible to suppress the attachment of the brazing material to the side surfaces of the ceramic substrate and the metal plate by concentrating the surplus brazing material in the brazing pool space. Work can be reduced and the substrate can be manufactured by precise processing.

本発明に係る製造方法を用いて製作されるパワーモジュールの全体構成例を示す縦断面図である。It is a longitudinal cross-sectional view which shows the example of whole structure of the power module manufactured using the manufacturing method which concerns on this invention. パワーモジュール用基板となる積層体の断面図である。It is sectional drawing of the laminated body used as the board | substrate for power modules. 図２に示す積層体の平面図である。It is a top view of the laminated body shown in FIG. パワーモジュール用基板となる積層体の他の例を示す断面図である。It is sectional drawing which shows the other example of the laminated body used as the board | substrate for power modules. 図４に示す積層体の平面図である。It is a top view of the laminated body shown in FIG.

以下、本発明の一実施形態について、図面を参照しながら説明する。
図１に、本発明に係るパワーモジュール用基板が用いられるパワーモジュール１０を示す。パワーモジュール１０は、表面に回路パターン４２が形成されたパワーモジュール用基板１２と、このパワーモジュール用基板１２の表面に搭載された半導体チップ等の電子部品１４と、パワーモジュール用基板１２の裏面に接合される冷却器１６とから構成される。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 shows a power module 10 in which a power module substrate according to the present invention is used. The power module 10 includes a power module substrate 12 having a circuit pattern 42 formed on the front surface, an electronic component 14 such as a semiconductor chip mounted on the surface of the power module substrate 12, and a back surface of the power module substrate 12. And a cooler 16 to be joined.

電子部品１４は、Ｓｎ−Ａｇ−Ｃｕ系、Ｚｎ−Ａｌ系若しくはＰｂ−Ｓｎ系等のはんだ材１４ａによってパワーモジュール用基板１２の回路パターン４２上に接合され、回路端子部に対してはアルミニウムからなるボンディングワイヤ（図示略）により接続される。なお、回路パターン４２の表面には、ニッケルめっき等のめっき被膜１５が形成される。   The electronic component 14 is joined onto the circuit pattern 42 of the power module substrate 12 by a solder material 14a such as Sn—Ag—Cu, Zn—Al, or Pb—Sn, and the circuit terminal portion is made of aluminum. Are connected by bonding wires (not shown). A plating film 15 such as nickel plating is formed on the surface of the circuit pattern 42.

冷却器１６は、アルミニウム合金の押し出し成形によって形成され、その長さ方向に沿って冷却水を流通させるための多数の流路１６ａが形成されている。この冷却器１６とパワーモジュール用基板１２との間は、ろう付け、はんだ付け、ボルト等によって接合される。   The cooler 16 is formed by extrusion molding of an aluminum alloy, and a plurality of flow paths 16a are formed along the length direction for circulating cooling water. The cooler 16 and the power module substrate 12 are joined by brazing, soldering, bolts, or the like.

パワーモジュール用基板１２は、セラミックス基板２０の両面にろう材３０によって金属板４０，７０が接合されてなる積層体５０を加工することにより形成される。すなわち、積層体５０に所定の回路パターン４２を形成し、必要に応じて個片に分割する等の加工を行うことにより、パワーモジュール用基板１２が形成される。   The power module substrate 12 is formed by processing a laminate 50 in which metal plates 40 and 70 are bonded to both surfaces of the ceramic substrate 20 by a brazing material 30. That is, the power module substrate 12 is formed by forming a predetermined circuit pattern 42 on the laminate 50 and performing processing such as dividing into pieces as needed.

セラミックス基板２０は、例えばＡｌＮ（窒化アルミニウム）、Ｓｉ３Ｎ４（窒化珪素）等の窒化物系セラミックス、若しくはＡｌ２Ｏ３（アルミナ）等の酸化物系セラミックスを母材として形成されている。 The ceramic substrate 20 is formed using, for example, a nitride ceramic such as AlN (aluminum nitride) or Si 3 N 4 (silicon nitride) or an oxide ceramic such as Al 2 O 3 (alumina) as a base material.

セラミックス基板２０の表面に接合される金属板４０は、エッチング処理によって回路パターン４２となる回路層用金属板であり、純アルミニウム若しくはアルミニウム合金により形成されている。
セラミックス基板２０の裏面に接合される金属板７０は、冷却器１６が接合される放熱層用金属板であり、純度９９．０ｗｔ％以上の純アルミニウムにより形成されている。
ろう材３０は、Ａｌ−Ｓｉ系、Ａｌ−Ｇｅ系、Ａｌ−Ｃｕ系、Ａｌ−Ｍｇ系またはＡｌ−Ｍｎ系等により形成されている。 The metal plate 40 bonded to the surface of the ceramic substrate 20 is a metal plate for a circuit layer that becomes a circuit pattern 42 by an etching process, and is formed of pure aluminum or an aluminum alloy.
The metal plate 70 bonded to the back surface of the ceramic substrate 20 is a metal plate for a heat dissipation layer to which the cooler 16 is bonded, and is formed of pure aluminum having a purity of 99.0 wt% or more.
The brazing material 30 is made of Al—Si, Al—Ge, Al—Cu, Al—Mg, Al—Mn, or the like.

パワーモジュール１０の回路パターン４２は、回路層用の金属板４０をエッチングすることにより形成される。また、放熱層用の金属板７０も、エッチングによって必要な大きさ、形状に形成される。回路を形成した後に、回路パターン４２表面にはめっき被膜１５が形成される。   The circuit pattern 42 of the power module 10 is formed by etching the circuit layer metal plate 40. Further, the metal plate 70 for the heat dissipation layer is also formed in a required size and shape by etching. After the circuit is formed, the plating film 15 is formed on the surface of the circuit pattern 42.

さらに、回路パターン４２が形成されたパワーモジュール用基板１２に対して、冷却器１６の接合、電子部品１４のはんだ付け、ワイヤボンディング等を行うことにより、パワーモジュール１０が製造される。   Further, the power module 10 is manufactured by joining the cooler 16, soldering the electronic component 14, wire bonding, and the like to the power module substrate 12 on which the circuit pattern 42 is formed.

ここで、セラミックス基板２０の表裏面に金属板４０，７０を加圧板６０間で接合する接合工程について説明する。接合工程においては、図２に示すように、金属板４０，７０をセラミックス基板２０の両面にろう材３０を介在させて積層してなる積層体５０を、セラミックス基板２０および金属板４０，７０の全面を覆う２枚の加圧板６０間で加熱しながら厚さ方向に加圧する。   Here, the joining process which joins the metal plates 40 and 70 between the pressure plates 60 on the front and back surfaces of the ceramic substrate 20 will be described. In the joining step, as shown in FIG. 2, a laminated body 50 formed by laminating metal plates 40, 70 on both sides of the ceramic substrate 20 with a brazing filler metal 30 interposed therebetween is formed on the ceramic substrate 20 and the metal plates 40, 70. The pressure is applied in the thickness direction while heating between the two pressure plates 60 covering the entire surface.

セラミックス基板２０および金属板４０，７０は矩形状板であり、図３に示すように、それぞれの一つの角部２１，４１，７１を一致させることにより位置決めされた状態で積層される。加圧板６０は、セラミックス基板２０および金属板４０，７０よりも大きい平面を有する板部材であって、接合工程においてはセラミックス基板２０および金属板４０，７０の全面を覆うように配置され、一つの角部６１を各角部２１，４１，７１に一致させることによりセラミックス基板２０および金属板４０，７０と同様に位置決めされる。   The ceramic substrate 20 and the metal plates 40 and 70 are rectangular plates, and are stacked in a state where they are positioned by matching the respective corners 21, 41 and 71 as shown in FIG. The pressure plate 60 is a plate member having a larger plane than the ceramic substrate 20 and the metal plates 40 and 70, and is disposed so as to cover the entire surface of the ceramic substrate 20 and the metal plates 40 and 70 in the joining step. By aligning the corner portion 61 with each corner portion 21, 41, 71, positioning is performed in the same manner as the ceramic substrate 20 and the metal plates 40, 70.

セラミックス基板２０は金属板４０，７０よりも大きい略矩形状板であって、位置決めに用いた角部２１を構成する辺縁部２０ａ，２０ｂに沿って複数の貫通孔（ろう溜まり形成部）２２が設けられている。貫通孔２２は、積層体５０において２枚の金属板４０，７０の間に挟まれることにより、各金属板４０，７０との間にろう溜まり空間Ａを形成している。   The ceramic substrate 20 is a substantially rectangular plate larger than the metal plates 40 and 70, and has a plurality of through holes (wax pool forming portions) 22 along the edge portions 20 a and 20 b constituting the corner portion 21 used for positioning. Is provided. The through hole 22 is sandwiched between the two metal plates 40 and 70 in the laminated body 50, thereby forming a brazing pool space A between the metal plates 40 and 70.

このようにセラミックス基板２０および金属板４０を積層した積層体５０を加圧板６０間に配置して、不活性ガス雰囲気、還元ガス雰囲気または真空雰囲気に保持された熱処理炉内において厚さ方向に加圧した状態で加熱し、ろう材３０を溶融させることによって、両金属板４０，７０をセラミックス基板２０にろう付けする。   Thus, the laminated body 50 which laminated | stacked the ceramic substrate 20 and the metal plate 40 is arrange | positioned between the pressurization plates 60, and it heats in the thickness direction in the heat processing furnace hold | maintained in inert gas atmosphere, reducing gas atmosphere, or vacuum atmosphere. The metal plates 40 and 70 are brazed to the ceramic substrate 20 by heating in a pressed state and melting the brazing material 30.

この接合工程において、ろう材３０は接合に十分な量であるので、セラミックス基板２０と各金属板４０，７０とは確実に接合されるが、圧縮されたセラミックス基板２０と各金属板４０，７０との間から余剰ろう材３０ａが押し出される。この余剰ろう材３０ａは、積層体５０の端面に向かって移動し、辺縁部２０ａ，２０ｂ近傍においてはろう溜まり空間Ａに流れ込んでここに保持される。したがって、この辺縁部２０ａ，２０ｂの近傍には、ろうこぶがほとんど形成されず、他の部分における余剰ろう材３０ａの漏出も減少する。   In this joining process, since the brazing material 30 is a sufficient amount for joining, the ceramic substrate 20 and the metal plates 40 and 70 are reliably joined, but the compressed ceramic substrate 20 and the metal plates 40 and 70 are joined together. Excess brazing material 30a is extruded from between the two. The surplus brazing material 30a moves toward the end face of the laminated body 50, flows into the brazing pool space A in the vicinity of the edge portions 20a and 20b, and is held therein. Therefore, almost no solder bumps are formed in the vicinity of the edge portions 20a and 20b, and leakage of excess brazing material 30a in other portions is also reduced.

このように、余剰ろう材３０ａがろう溜まり空間Ａに保持されることにより、積層体５０の端面ではろうこぶの形成が抑制されるので、回路パターン４２を形成するエッチングや印刷等の際に、積層体５０の角部を用いて位置決めすることができる。そして、積層体５０を個片に分割する際にろう溜まり空間Ａを含む部分を切り落とすことにより、余剰ろう材３０ａを容易に除去することができる。   In this way, since the surplus brazing material 30a is held in the brazing pool space A, the formation of a solder bump is suppressed on the end face of the stacked body 50. Therefore, during etching or printing to form the circuit pattern 42, Positioning can be performed using the corners of the stacked body 50. And when the laminated body 50 is divided | segmented into an individual piece, the excess brazing material 30a can be easily removed by cutting off the part containing the brazing pool space A. FIG.

以上説明したように、本発明のパワーモジュール用基板の製造方法によれば、余剰ろう材をろう溜まり空間に集めることができるので、余剰ろう材の漏出によるろうこぶの形成を低減し、余剰ろう材の除去作業を容易にできるとともに、後加工における位置決めを容易にでき、精密な加工による基板の製造が可能となる。   As described above, according to the method for manufacturing a power module substrate of the present invention, surplus brazing material can be collected in the brazing pool space, so that formation of a solder bump due to leakage of surplus brazing material is reduced, and surplus brazing is performed. The material can be easily removed and positioning in post-processing can be facilitated, and the substrate can be manufactured by precise processing.

なお、本発明は前記実施形態の構成のものに限定されるものではなく、細部構成においては、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。たとえば、セラミックス基板２０の両面に金属板４０，７０を接合する前記実施形態ではろう溜まり形成部として貫通孔２２を設けて、貫通孔２２と金属板４０，７０との間にろう溜まり空間を形成したが、ろう溜まり形成部は貫通孔に限らず、図４および図５に示すようにセラミックス基板２０の表面に設けられた凹部２３であってもよい。この場合、セラミックス基板２０の片面に接合される金属板４０と凹部２３との間に、ろう溜まり空間Ａを形成することができる。なお、ろう溜まり形成部としての凹部は、図５に示すような直線状の溝に限らず、曲線状の溝や複数の円形凹部等、余剰ろう材を保持するのに適した種々の形状に形成することができる。   In addition, this invention is not limited to the thing of the structure of the said embodiment, In a detailed structure, it is possible to add a various change in the range which does not deviate from the meaning of this invention. For example, in the above-described embodiment in which the metal plates 40 and 70 are bonded to both surfaces of the ceramic substrate 20, the through hole 22 is provided as a brazing pool forming portion, and a brazing pool space is formed between the through hole 22 and the metal plates 40 and 70. However, the brazing reservoir forming portion is not limited to the through hole, and may be a recess 23 provided on the surface of the ceramic substrate 20 as shown in FIGS. In this case, a brazing pool space A can be formed between the metal plate 40 bonded to one surface of the ceramic substrate 20 and the recess 23. The concave portion as the brazing reservoir forming portion is not limited to the linear groove as shown in FIG. 5, but has various shapes suitable for holding excess brazing material such as a curved groove and a plurality of circular concave portions. Can be formed.

１０ パワーモジュール
１２ パワーモジュール用基板
１４ 電子部品
１４ａ はんだ材
１５ めっき被膜
１６ 冷却器
１６ａ 流路
２０ セラミックス基板
２０ａ，２０ｂ 辺縁部
２１ 角部
２２ 貫通孔（ろう溜まり形成部）
２３ 凹部（ろう溜まり形成部）
３０ ろう材
３０ａ 余剰ろう材
４０，７０ 金属板
４１，７１ 角部
４２ 回路パターン
５０ 積層体
６０ 加圧板
Ａ ろう溜まり空間 DESCRIPTION OF SYMBOLS 10 Power module 12 Power module board | substrate 14 Electronic component 14a Solder material 15 Plating film 16 Cooler 16a Flow path 20 Ceramic substrate 20a, 20b Edge part 21 Corner | angular part 22 Through-hole (brading pool formation part)
23 Recessed part (wax reservoir forming part)
30 Brazing material 30a Excess brazing material 40, 70 Metal plates 41, 71 Corner 42 Circuit pattern 50 Laminate 60 Pressure plate A Brazing space

Claims (3)

略矩形のセラミックス基板の表面に略矩形の金属板を接合する接合工程を有するパワーモジュール用基板の製造方法であって、
前記接合工程は、ろう材を介在させて前記セラミックス基板と前記金属板とを積層した積層体を、前記セラミックス基板よりも大面積であってこのセラミックス基板および前記金属板全面を覆う２枚の加圧板間で加熱しながら厚さ方向に加圧する工程であり、
前記接合工程において、前記加圧板、前記セラミックス基板および前記金属板の位置決めを、前記加圧板の一つの角部、前記金属板の一つの角部および前記セラミックス基板の一つの角部を一致させることにより行い、
前記セラミックス基板の前記角部を構成する辺縁部近傍に、前記金属板との間にろう溜まり空間を形成するろう溜まり形成部が設けられていることを特徴とするパワーモジュール用基板の製造方法。 A method for manufacturing a power module substrate, comprising a bonding step of bonding a substantially rectangular metal plate to a surface of a substantially rectangular ceramic substrate,
In the joining step, a laminate obtained by laminating the ceramic substrate and the metal plate with a brazing material interposed between them is added two sheets of a larger area than the ceramic substrate and covering the entire surface of the ceramic substrate and the metal plate. It is a process of pressurizing in the thickness direction while heating between pressure plates,
In the bonding step, the pressing plate, the ceramic substrate, and the metal plate are positioned by aligning one corner of the pressing plate, one corner of the metal plate, and one corner of the ceramic substrate. Done by
A power module substrate manufacturing method, characterized in that a brazing pool forming portion for forming a brazing pool space between the ceramic plate and the metal plate is provided in the vicinity of an edge portion constituting the corner portion of the ceramic substrate. . 前記ろう溜まり形成部は、前記セラミックス基板を貫通する貫通孔であることを特徴とする請求項1に記載のパワーモジュール用基板の製造方法。   2. The method for manufacturing a power module substrate according to claim 1, wherein the brazing pool forming portion is a through-hole penetrating the ceramic substrate. 前記ろう溜まり形成部は、前記セラミックス基板の表面に設けられた凹部であることを特徴とする請求項1に記載のパワーモジュール用基板の製造方法。   2. The method for manufacturing a power module substrate according to claim 1, wherein the brazing pool forming portion is a recess provided on a surface of the ceramic substrate.
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