JP5125241B2 - Power module substrate manufacturing method - Google Patents

Power module substrate manufacturing method Download PDF

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Publication number
JP5125241B2
JP5125241B2 JP2007155403A JP2007155403A JP5125241B2 JP 5125241 B2 JP5125241 B2 JP 5125241B2 JP 2007155403 A JP2007155403 A JP 2007155403A JP 2007155403 A JP2007155403 A JP 2007155403A JP 5125241 B2 JP5125241 B2 JP 5125241B2
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brazing
metal
ceramic substrate
layer
foil
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JP2008311294A (en
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慎介 青木
敏之 長瀬
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三菱マテリアル株式会社
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    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Description

  The present invention relates to a method for manufacturing a power module substrate on which an electronic component such as a semiconductor chip is mounted.

This type of power module is generally a circuit disposed on the upper surface of a ceramic substrate formed of AlN (aluminum nitride), Al 2 O 3 (alumina), Si 3 N 4 (silicon nitride), SiC (silicon carbide), or the like. A power module substrate having a layer and a metal layer disposed on the lower surface, a semiconductor chip as a heating element mounted on the circuit layer, and a heat sink disposed on the lower surface of the metal layer (for example, , See Patent Document 1). The heat generated in the semiconductor chip is dissipated into the cooling water in the heat sink via the metal layer.
Here, the power module substrate is formed by punching a plate-shaped metal base material in which a circuit layer or a metal layer is formed of pure aluminum or an aluminum alloy, and the circuit layer or the metal layer is formed on the surface of the ceramic substrate. It is manufactured by joining by brazing or soldering.
Japanese Patent Laid-Open No. 2002-9212

  However, the following problems remain in the conventional method for manufacturing a power module substrate. That is, burrs that warp toward the outer edge by the punching process are formed on the outer edge portion of the circuit layer and the metal layer formed by punching the metal base material. And since the circuit layer and the metal layer are joined so that the tip of this burr faces the ceramic substrate, the brazing material wraps around the outer surface of the circuit layer and the metal layer at the time of joining. For this reason, there is a problem that the adhesiveness of the wire at the time of wire bonding is lowered by the brazing material that wraps around the outer surface. In addition, since the tip of the burr faces the ceramic substrate, the brazing material layer between the outer edge of the circuit layer or metal layer and the ceramic substrate becomes thin, and the bonding to the ceramic substrate at the outer edge of the circuit layer or metal layer There is a problem that the performance is lowered.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a method for manufacturing a power module substrate that suppresses the occurrence of brazing material and improves the bondability.

The present invention employs the following means in order to solve the above problems. That is, the method for manufacturing a power module substrate of the present invention is a method for manufacturing a power module substrate in which a plate-like metal member is brazed and bonded to the surface of a ceramic substrate, and a brazing material foil is applied to the surface of the metal base material. A punching step of forming the brazing material foil and the metal base material from the surface side on which the brazing material foil is provided , and forming a metal member having an upper portion that warps toward the outer edge at the outer edge portion And peeling off the brazing material foil provided on the surface of the metal member, bonding it to the other surface of the metal member, and bending the metal so that the anti-upper portion warps in a direction away from the ceramic substrate. A member is disposed on the ceramic substrate, and a joining step of brazing and joining the metal member and the ceramic substrate is provided.

According to this invention, it can suppress that a brazing material wraps around the outer surface of a metal member by joining a metal member and a ceramic substrate so that an anti-upper part may warp in the separation direction with respect to a ceramic substrate. That is, the warping direction of the upper part is a direction away from the ceramic substrate, so that the brazing material does not exceed the upper part through the side surface of the metal member, and the metal member is on the surface of the metal member on the side away from the ceramic substrate. Not reach. Therefore, it is difficult for the brazing material to go around the outer surface of the metal member, and the adhesion of the wire during wire bonding can be improved.
In addition, since a brazing material layer having a sufficient thickness can be formed between the outer edge of the metal member and the ceramic substrate, the bondability between the metal member and the ceramic substrate is improved. Thereby, even if the stress resulting from a temperature change acts on a metal member, this stress can be absorbed. Therefore, the life can be extended.

A method of manufacturing a power module substrate of the present invention, in about the punching抜工, the brazing material foil provided on the surface of the metal matrix, since the brazing material foil is set to be punched together with the metal matrix, the metal Since the brazing material foil having the same external shape as the metal member can be formed simultaneously with the member, the manufacturing process can be simplified.

  According to the method for manufacturing a power module substrate according to the present invention, the brazing material is unlikely to go around the surface of the metal member on the side away from the ceramic substrate, so that the adhesion of the wire is improved. In addition, since the bondability between the metal member and the ceramic substrate is improved, the life can be extended.

  Hereinafter, an embodiment of a method for manufacturing a power module substrate according to the present invention will be described with reference to the drawings. In each drawing used in the following description, the scale is appropriately changed to make each member a recognizable size.

First, a power module substrate manufactured by the method for manufacturing a power module substrate in the present embodiment will be described.
As shown in FIG. 1, the power module substrate 1 in the present embodiment is disposed on the ceramic substrate 11, the metal layer (metal member) 12 disposed on the lower surface of the ceramic substrate 11, and the upper surface of the ceramic substrate 11. A plurality of circuit layers (metal members) 13 are provided.
The ceramic substrate 11 is made of a plate-shaped ceramic material such as AlN, Al 2 O 3 , Si 3 N 4 , or SiC. Here, the thickness of the ceramic substrate 11 is, for example, 0.635 mm.

The metal layer 12 is formed of a metal having a high thermal conductivity such as Al (aluminum), and is bonded and fixed to the ceramic substrate 11 by a brazing material layer 14. Here, the metal layer 12 has a thickness of, for example, 0.6 mm, and is formed by punching a metal base material 21 described later. The brazing material layer 14 is formed of, for example, an Al—Si (silicon) -based (for example, Al: 93 wt%, Si: 7 wt%, 10 μm to 15 μm thickness) or Al—Ge (germanium) brazing material. ing.
Then, on the outer edge portion of the metal layer 12, an anti-upper portion 15 that warps toward the outer edge end is formed along the outer edge portion. The anti-upper portion 15 is a so-called burr formed when the metal base material 21 is punched, and the warping up direction is a direction away from the ceramic substrate 11. Here, the height of the burr at the outer edge of the metal layer 12, which is the protruding amount of the opposite upper portion 15 with respect to the central portion of the metal layer 12, is 20 μm or more and 50 μm or less, for example.

Similarly to the metal layer 12, the circuit layer 13 is made of a metal having a high thermal conductivity, such as Al, and constitutes a circuit by being appropriately spaced. The circuit layer 13 is bonded and fixed to the ceramic substrate 11 by the brazing material layer 16. Here, the circuit layer 13 has a thickness of 0.6 mm, for example, and is formed by punching the metal base material 21. The brazing material layer 16 is formed of, for example, an Al—Si based or Al—Ge based brazing material.
Then, on the outer edge portion of the circuit layer 13, an anti-upper portion 17 that warps toward the outer edge end is formed along the outer edge portion. The anti-upper portion 17 is a burr formed when the metal base material 21 is punched out, and the warping direction is a direction away from the ceramic substrate 11. Here, the height of the burr at the outer edge portion of the anti-upper portion 17 is, for example, 20 μm or more and 50 μm or less.
An electronic component 18 is fixed to the upper surface of the circuit layer 13 by a solder layer 19. Here, as the electronic component 18, for example, a semiconductor chip can be applied, and examples of the semiconductor chip include a power device such as an IGBT (Insulated Gate Bipolar Transistor).

Next, a method for manufacturing the power module substrate 1 having the above configuration will be described.
First, the plate-shaped metal base material 21 is punched to form the metal layer 12 and the circuit layer 13 (punching step). Here, as shown in FIG. 2A, the convex mold 22 and the concave mold 23 sandwich and shear the metal base material 21 having the brazing material foil 24 bonded to the surface.
The brazing material foil 24 has a thickness of, for example, 10 μm or more and 20 μm or less. The brazing material foil 24 is affixed to the metal base material 21 with a volatile organic solvent. Here, the viscosity of the volatile organic solvent is preferably 1 × 10 −3 Pa · s or more, and more preferably 20 × 10 −3 Pa · s or more and 1500 × 10 −3 Pa · s or less. preferable. Further, the surface tension of the volatile organic solvent is preferably 80 × 10 −3 N / m or less, more preferably 20 × 10 −3 N / m or more and 60 × 10 −3 N / m or less. . The volatilization temperature of the volatile organic solvent is not higher than the melting point temperature of the brazing foil 24 described later, specifically 400 ° C. or lower, more preferably 300 ° C. or lower. Examples of the volatile organic solvent include divalent and trivalent polyhydric alcohols and octanediol.
In addition, the press pressure by the convex mold | type 22 and the concave mold | type 23 is 200 kgf or more and 300 kgf (1961.33N or more and 2941.999N or less), for example.

  As a result, the metal layer 12 and the circuit layer 13 are punched together with the brazing material foil 24. At this time, as shown in FIG. 2B, an anti-upper portion 15 that warps toward the outer edge is formed along the outer edge of the outer edge of the metal layer 12. The brazing material foil 24 </ b> A punched together with the metal layer 12 adheres to the one surface 12 a that is the upward direction of the anti-upper portion 15 of the metal layer 12. Similarly, on the outer edge portion of the circuit layer 13, as shown in FIG. 2B, an anti-upper portion 17 is formed along the outer edge portion. The brazing material foil 24 </ b> B punched together with the circuit layer 13 adheres to the one surface 13 a that is the upward direction of the anti-upper portion 17 of the circuit layer 13.

Here, as shown in FIG. 2A, the metal base material 21 and the brazing material foil 24 are disposed so that the brazing material foil 24 faces the convex mold 22. As a result, the metal base material 21 and the brazing material foil 24 can be simultaneously punched without the thin brazing material foil 24 being peeled off from the metal base material 21 compared to the metal base material 21.
Then, the brazing material foil 24A bonded to the one surface 12a of the metal layer 12 is peeled off, and the brazing material foil 24A is bonded again to the other surface 12b of the metal layer 12 using the volatile organic solvent described above. Similarly, the brazing material foil 24B bonded to the one surface 13a of the circuit layer 13 is peeled off, and the brazing material foil 24B is bonded to the other surface 13b of the circuit layer 13 again.
If the brazing material foil 24 is not peeled off, the metal base material 21 and the brazing material foil 24 may be arranged so that the brazing material foil 24 faces the convex mold 22. Thereby, it is not necessary to once peel off and re-arrange the brazing material foil 24 bonded to the metal base material 21, thereby simplifying the manufacturing process.

  Subsequently, the metal layer 12 and the circuit layer 13 are brazed and bonded to the ceramic substrate 11 (bonding step). Here, the metal layer 12 and the circuit layer 13 are disposed on both upper and lower surfaces of the ceramic substrate 11 as shown in FIG. That is, the metal layer 12, the ceramic substrate 11, and the circuit layer 13 are laminated. At this time, the metal layer 12 is disposed on the lower surface of the ceramic substrate 11 via the brazing material foil 24A, and is positioned by the volatile organic solvent described above. Similarly, the circuit layer 13 is arrange | positioned on the upper surface of the ceramic substrate 11 via the brazing material foil 24B, and is positioned with a volatile organic solvent.

  And the laminated body which consists of the metal layer 12, the ceramic substrate 11, and the circuit layer 13 is clamped by carbon heater member 25A, 25B, and this laminated body is heated, pressing. As a result, the brazing material foils 24A and 24B are heated and melted to form brazing material layers 14 and 16, the metal layer 12 is brazed to the lower surface of the ceramic substrate 11, and the circuit layer 13 is brazed to the upper surface of the ceramic substrate 11. The

At this time, since the warping direction of the upper portion 15 of the metal layer 12 is a direction away from the lower surface of the ceramic substrate 11, the molten brazing foil 24 </ b> A extends from the side surface of the metal layer 12 to the one surface 12 a of the metal layer 12. The wraparound is suppressed. Further, since a gap is formed between the metal layer 12 and the ceramic substrate 11 at the outer edge portion of the metal layer 12, a sufficiently thick brazing material layer 14 is formed at the outer edge portion of the metal layer 12, and the metal layer 12. And the ceramic substrate 11 are bonded with sufficient strength.
Similarly, since the upward direction of the anti-upper portion 17 of the circuit layer 13 is away from the upper surface of the ceramic substrate 11, the molten brazing material foil 24 </ b> B is prevented from wrapping around the one surface 13 a of the circuit layer 13. . Further, since the brazing material layer 16 having a sufficient thickness is formed, the circuit layer 13 and the ceramic substrate 11 are bonded with sufficient strength.
Since the volatile organic solvent volatilizes at a temperature lower than the melting temperature of the brazing foils 24A and 24B, it is volatilized and removed when the laminate is heated.
As described above, the power module substrate 1 as shown in FIG. 1 is manufactured.

Next, the wraparound state of the brazing material in the metal layer 12 and the circuit layer 13 is shown in FIGS.
Here, in FIG. 3, the other surface 12 b of the metal layer 12 and the other surface 13 b of the circuit layer 13 are bonded to the ceramic substrate 11 so that the warping direction of the anti-upper portions 15 and 17 is a direction away from the ceramic substrate 11. The wraparound state of the brazing material at the time is shown. 3A is a plan view of the power module substrate 1 viewed from the circuit layer 13 side, and FIG. 3B is a plan view of the power module substrate 1 viewed from the metal layer 12 side.
FIG. 4 shows a state where the one surface 12a of the metal layer 12 and the one surface 13a of the circuit layer 13 are joined to the ceramic substrate 11 so that the warping direction of the upper portions 15 and 17 approaches the ceramic substrate 11. The wraparound state of the material is shown. 4A is a plan view of the power module substrate 1 viewed from the circuit layer 13 side, and FIG. 4B is a plan view of the power module substrate 1 viewed from the metal layer 12 side. 3 and 4, the plurality of metal layers 12 are bonded to the ceramic substrate 11. 3 and 4 indicates a region where the brazing material has been wrapped around.
As shown in FIGS. 3 and 4, bonding is performed by bonding the metal layer 12 and the circuit layer 13 and the ceramic substrate 11 so that the upward direction of the anti-upper portions 15 and 17 is away from the ceramic substrate 11. It can be seen that brazing of the brazing material in the process can be suppressed.

The power module substrate 1 manufactured in this way is used for a power module 30 as shown in FIG. 5, for example. The power module 30 includes the power module substrate 1, the electronic component 18, a cooler 31, and a heat sink 32.
The cooler 31 is a water-cooled heat sink, and a flow path through which cooling water as a coolant flows is formed.
The heat radiating plate 32 has a substantially rectangular flat plate shape in plan view, and is formed of, for example, Al, Cu, AlSiC (aluminum silicon carbide), Cu—Mo (molybdenum), or the like. And the heat sink 32 is being fixed with the screw | thread 33 with respect to the cooler 31 via heat conductive grease. Further, the heat sink 32 and the metal layer 12 of the power module substrate 1 are joined by a solder layer 34. In addition, the heat sink 32 and the metal layer 12 may be joined by brazing. At this time, when the power module substrate 1 is manufactured, the respective members may be brazed together in a state in which the radiator plate 32 is further laminated on the laminate of the metal layer 12, the ceramic substrate 11, and the circuit layer 13. Further, the power module 30 may have a configuration in which the power module substrate 1 is provided on the upper surface of the cooler 31 without providing the heat radiating plate 32.

According to such a method for manufacturing a power module substrate, the metal layer 12 and the circuit layer 13 are bonded to the ceramic substrate 11 so that the warping direction of the anti-upper portions 15 and 17 is away from the ceramic substrate 11. By doing so, it is possible to suppress the brazing material from entering the one surfaces 12a and 13a of the metal layer 12 and the circuit layer 13, respectively. Thereby, the adhesiveness of wire bonding improves.
In addition, since the brazing material layers 14 and 16 having a sufficient thickness are formed between the metal layer 12 and the circuit layer 13 and the ceramic substrate 11, the metal layer 12 and the circuit layer 13 and the ceramic substrate 11 are formed. And the bonding strength is improved. Thereby, the lifetime of the board | substrate 1 for power modules can be achieved.
Then, by performing a punching process in a state where the brazing material foil 24 is bonded to the metal base material 21, brazing material foils 24A and 24B having the same outer shape as the metal layer 12 and the circuit layer 13 can be simultaneously formed. The process is simplified.

In addition, this invention is not limited to the said embodiment, A various change can be added in the range which does not deviate from the meaning of this invention.
For example, in the punching process, the metal base material and the brazing material foil are punched together, but the metal base material and the brazing material foil are punched separately and then pasted using a volatile organic solvent. You may combine them.
In the bonding process, the metal layer and the circuit layer are bonded to the ceramic substrate using the brazing material foil, but the bonding may be performed using a paste-like brazing material.
In the bonding step, the circuit is formed by arranging a plurality of circuit layers at appropriate intervals. However, after the bonding step, the circuit layer may be formed by etching and dividing the circuit layer as appropriate. .

In addition, the power module substrate has a metal layer bonded to the lower surface of the ceramic substrate, but a heat sink or a cooler may be directly bonded to the lower surface of the ceramic substrate without providing the metal layer.
And although it is set as the water-cooled cooler, an air-cooled cooler may be used.

  According to this invention, industrial applicability is recognized regarding the manufacturing method of the board | substrate for power modules which suppressed generation | occurrence | production of brazing material and improved bondability.

It is a block diagram which shows the board | substrate for power modules manufactured by the manufacturing method of the board | substrate for power modules in one Embodiment of this invention. It is process drawing which shows the manufacturing method of the board | substrate for power modules in one Embodiment. The power module board | substrate is shown, (a) is the top view seen from the circuit layer side, (b) is the top view seen from the metal layer side. Similarly, the board | substrate for power modules is shown, (a) is the top view seen from the circuit layer side, (b) is the top view seen from the metal layer side. It is a block diagram which shows a power module provided with the board | substrate for power modules of FIG.

Explanation of symbols

1 Power Module Substrate 11 Ceramic Substrate 12 Metal Layer (Metal Member)
13 Circuit layer (metal member)
15, 17 Anti-upper part 21 Metal base material 24 Brazing material foil

Claims (1)

  1. In a method for manufacturing a power module substrate in which a plate-like metal member is brazed and bonded to the surface of a ceramic substrate,
    A brazing material foil is provided on the surface of the metal base material, the brazing material foil and the metal base material are punched from the surface side on which the brazing material foil is provided, and warped upward toward the outer edge at the outer edge portion. A punching process for forming a metal member having an upper part;
    The brazing material foil provided on the surface of the metal member is peeled off, bonded to the other surface of the metal member, and the metal member is warped upward in a direction away from the ceramic substrate. A method of manufacturing a power module substrate, comprising: a joining step of placing on the ceramic substrate and brazing and joining the metal member and the ceramic substrate.
JP2007155403A 2007-06-12 2007-06-12 Power module substrate manufacturing method Active JP5125241B2 (en)

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JP5131204B2 (en) * 2009-01-13 2013-01-30 三菱マテリアル株式会社 Power module substrate manufacturing method
JP5640571B2 (en) 2009-09-09 2014-12-17 三菱マテリアル株式会社 Power module substrate manufacturing method
JP5640570B2 (en) 2009-09-09 2014-12-17 三菱マテリアル株式会社 Power module substrate manufacturing method
EP2492958A4 (en) 2009-10-22 2018-01-03 Mitsubishi Materials Corporation Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module
JP5552803B2 (en) * 2009-12-07 2014-07-16 三菱マテリアル株式会社 Power module substrate manufacturing method
JP5452345B2 (en) * 2010-04-28 2014-03-26 昭和電工株式会社 Insulated circuit board and manufacturing method thereof, power module base and manufacturing method thereof
JP5764342B2 (en) * 2011-02-10 2015-08-19 昭和電工株式会社 Insulated circuit board, power module base and manufacturing method thereof
JP2013098465A (en) * 2011-11-04 2013-05-20 Aisin Aw Co Ltd Semiconductor device
JP6501638B2 (en) 2015-06-11 2019-04-17 オムロンオートモーティブエレクトロニクス株式会社 Electronic device

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JPH0647443A (en) * 1992-07-31 1994-02-22 Mitsubishi Materials Corp Method for working clad material
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