CN110676184B - Interconnection method for metal shell lead - Google Patents
Interconnection method for metal shell lead Download PDFInfo
- Publication number
- CN110676184B CN110676184B CN201910793468.3A CN201910793468A CN110676184B CN 110676184 B CN110676184 B CN 110676184B CN 201910793468 A CN201910793468 A CN 201910793468A CN 110676184 B CN110676184 B CN 110676184B
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- welding
- spot welding
- metal
- bonding
- lead
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/858—Bonding techniques
- H01L2224/85801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/858—Bonding techniques
- H01L2224/85895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/85897—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Abstract
The invention discloses a metal shell lead interconnection method, which comprises the following steps: a. assembling a metal transition soldering lug on the end face of the lead post of the metal shell by a spot welding process; b. bonding and interconnecting the metal transition soldering lug and the circuit board element by a lead bonding process; the invention can adopt the same metal Al-Al bonding process during bonding, and has the obvious advantages of high bonding strength and high reliability; the adopted spot welding process and bonding process do not need soldering flux, and have the advantages of greenness, conciseness and high temperature resistance; the current is only concentrated on the end face of the lead post insulated from the circuit during spot welding, so that the active device in the circuit board cannot be electrically damaged, and the circuit board has the advantage of no external current damage.
Description
Technical Field
The invention relates to the technical field of thick film hybrid integrated circuits, in particular to a metal shell lead interconnection method.
Background
The metal shell lead interconnection process is a process for realizing the electrical interconnection between a metal shell lead post and a circuit substrate, and is a basic assembly process of a microelectronic product. In a power hybrid integrated circuit, in order to carry large current, a thick wire interconnection line with a diameter of over 200 μm is generally required in a metal shell lead interconnection process. At present, common methods for realizing the interconnection of the leads of the high-power metal shells are a lead bonding interconnection process, a thick copper wire lead welding interconnection process and a thick lead spot welding interconnection process, and the metal shell lead interconnection processes all have related problems.
The reliability hidden danger of the lead bonding interconnection process is that most of the prior Au-plated or Ni-plated shells are used, the Au-plated shell coarse aluminum wire bonding is influenced by the reliability problem of an Au-Al bonding system, and the Au-Al bonding system is relatively safe at low temperature, but a Kerkel cavity can be generated through high-temperature treatment such as high-temperature capping and long-time high-temperature baking, so that the failure problem of stripping and falling of a bonding wire is caused. This problem is fatal to the quality and reliability of the thick film power circuit. Although the Au-plated housing is bonded by the gold tape, the Au-plated housing has high reliability, but the Au-plated housing is hardly used due to high cost. When a Ni-plated shell is used, the Al-Ni bond formed is more reliable than Al-Ag or Al-Au bonds, but the nickel surface is extremely susceptible to oxygenThe problem of difficult bonding, poor bonding performance such as bonding inequality, or the need of adding special procedures to realize the bonding is solved, for example, the method for improving the reliability of the lead bonding in the integrated circuit (patent No. ZL 20051003089.8) is a method for re-electroplating nickel on a lead post, so that the reliability problem of an Au-Al bonding system is avoided, and the reliability of the lead bonding of an aluminum wire metal shell is improved. In addition, copper wire bonding requires high purity N, although copper wire is inexpensive2、H2The method is completed in a protective atmosphere environment, so that the process difficulty is increased, and the defects that the gold wire bonding is difficult to occur exist, such as substrate cracks, silicon pits, low bonding strength, cold solder and the like mainly exist, and the popularization and the application of the copper wire bonding on the surface of the metal shell lead are seriously influenced by the defects.
The related reliability hidden danger also exists in the lead welding interconnection process of the blister copper wire, because when the traditional silver-plated copper wire soldering mode is adopted, because the melting point of common solder is lower (about 180 ℃), the welding mode has the problem that the welding reliability is reduced because the welding flux is melted when the working temperature of a circuit is increased, and the reliability problems of desoldering, open circuit and the like caused by the melting of the welding flux when the temperature of a metal shell lead column is increased in the process of welding and inserting the circuit and other components. In addition, the traditional welding mode needs to be operated by means of soldering flux, and after operation, chemical reagents are needed for cleaning treatment, so that the process is complicated.
The thick lead spot welding interconnection process realizes the electrical interconnection of the lead and the substrate in a pulse spot welding mode, the reliability is relatively good, but the pulse spot welding mode needs to realize the welding of the lead and an element by means of large current, and the external current can generate electrical damage to interconnected active devices, so that the potential safety hazard of the product reliability is caused.
Disclosure of Invention
The invention aims to solve the reliability problems of the traditional metal outer lead bonding interconnection process, the traditional copper wire lead welding interconnection process and the traditional thick lead spot welding interconnection process, and provides a metal shell lead interconnection method.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a metal can lead interconnection method comprising:
a. assembling a metal transition soldering lug on the end face of the lead post of the metal shell by a spot welding process;
b. and bonding and interconnecting the metal transition soldering lug and the circuit board element by a wire bonding process.
The invention has the beneficial effects that:
compared with the conventional outer lead bonding technology, the bonding method can adopt the same metal Al-Al bonding process during bonding, and has the obvious advantages of high bonding strength and high reliability.
Compared with the traditional copper wire outer lead welding interconnection technology, the spot welding technology and the bonding technology adopted by the invention do not need soldering flux, and have the advantages of being green, simple and high-temperature resistant.
Compared with the thick lead spot welding interconnection technology, the invention adopts the spot welding technology, the current is only concentrated on the end surface of the lead post insulated with the circuit, the active device in the circuit board can not be electrically damaged, and the invention has the advantage of no external current damage.
Drawings
The invention is further illustrated with reference to the following figures and examples:
FIG. 1 is a schematic view of an assembled metal transition lug of the present invention;
FIG. 2 is a schematic view of a weld curve of the spot weld of the present invention;
fig. 3 is a schematic illustration of a wire bond of the present invention.
Detailed Description
The invention provides a metal shell lead interconnection method, which comprises the following steps:
a. as shown in fig. 1, a metal transition soldering lug 3 is assembled on the end face of a lead post 2 of a metal shell 1 through a spot welding process;
the spot welding can adopt a micro-gap parallel spot welding or butt welding mode, and the spot welding equipment is an M3-20 type direct current spot welding device; the welding process can be divided into three steps, firstly, a metal wire to be welded is placed on the surface of a welding object, and the micro-gap parallel spot welding head is moved to be right above a welding point; secondly, the micro-gap parallel spot welding heads are contacted and apply certain pressure on the surface of the metal wire to be welded, spot welding equipment outputs specific current to two ends of a parallel positive electrode 4a and a parallel negative electrode 4b according to requirements, strong current flows through a welding area, electric energy is converted into heat energy, and a metal nugget is formed at the welding position instantly so as to firmly connect two metals together; then lifting the micro-gap parallel spot welding head to complete spot welding;
when the spot welding of lead post and metal transition soldering lug is carried out, the welding parameters are as follows: the welding curve is shown in fig. 2, wherein the welding curve comprises a rising edge of 10ms, a peak current of 500A, a peak duration of 50ms and a falling edge of 10 ms; the metal nuggets formed by spot welding can bear the high temperature of 500 ℃, which is far beyond the melting point range of 180 ℃ of the conventional tin welding;
b. referring to fig. 3, the metal transition bonding pad 3 and the circuit board element 5 are bonded and interconnected by a wire bonding process, and an Al-Al bonding process is used during bonding to form an aluminum wire bonding wire 6 between the metal transition bonding pad 3 and the circuit board element 5.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner; those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention.
Claims (1)
1. A metal can lead interconnection method, comprising the steps of:
a. assembling a metal transition welding sheet (3) on the end face of a lead post (2) of a metal shell (1) by a spot welding process, wherein a micro-gap parallel spot welding or butt welding mode can be adopted during spot welding, and spot welding equipment is an M3-20 type direct current spot welding device; the welding process can be divided into three steps, firstly, a metal transition welding sheet (3) to be welded is placed on the surface of a welding object, and a micro-gap parallel spot welding head is moved right above a welding point; secondly, the micro-gap parallel spot welding head contacts and applies certain pressure on the surface of a metal wire to be welded, spot welding equipment outputs specific current to two ends of a parallel positive electrode (4 a) and a parallel negative electrode (4 b) according to requirements, strong current flows through a welding area, electric energy is converted into heat energy, and a metal nugget is formed at the welding position instantly so as to firmly connect the two metals together; then lifting the micro-gap parallel spot welding head to complete spot welding;
b. when the spot welding of lead post and metal transition soldering lug is carried out, the welding parameters are as follows: the rising edge is 10ms, the peak current is 500A, the peak duration is 50ms, the falling edge is 10ms, and a metal nugget formed by spot welding can bear the high temperature of 500 ℃, which is far beyond the melting point range of 180 ℃ of the conventional tin welding;
c. and bonding and interconnecting the metal transition soldering lug (3) and the circuit board element (5) through a lead bonding process, and forming an aluminum wire bonding wire (6) between the metal transition soldering lug (3) and the circuit board element (5) by adopting an Al-Al bonding process during bonding.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910793468.3A CN110676184B (en) | 2019-08-27 | 2019-08-27 | Interconnection method for metal shell lead |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910793468.3A CN110676184B (en) | 2019-08-27 | 2019-08-27 | Interconnection method for metal shell lead |
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| CN110676184A CN110676184A (en) | 2020-01-10 |
| CN110676184B true CN110676184B (en) | 2021-11-02 |
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| CN113161319B (en) * | 2021-04-23 | 2022-03-22 | 长鑫存储技术有限公司 | Semiconductor structure and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101673693A (en) * | 2009-09-22 | 2010-03-17 | 贵州振华风光半导体有限公司 | Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof |
| CN205428913U (en) * | 2016-03-09 | 2016-08-03 | 上海道之科技有限公司 | Power semiconductor module |
| CN110164780A (en) * | 2018-01-25 | 2019-08-23 | 安徽华晶微电子材料科技有限公司 | A kind of lead wire connection method of integrated circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0811302B2 (en) * | 1990-09-18 | 1996-02-07 | 住友金属工業株式会社 | Dissimilar metal joining method |
| CN103295918B (en) * | 2013-05-30 | 2015-08-12 | 江西联创特种微电子有限公司 | A kind of preparation method of high-power field-effect transistor aluminium-gold bonding transition plate |
| TWI791013B (en) * | 2017-03-13 | 2023-02-01 | 美商庫利克和索夫工業公司 | Methods for ultrasonically bonding semiconductor elements |
| CN207271836U (en) * | 2017-08-20 | 2018-04-27 | 徐卓辉 | It is a kind of mutually to spell combining structure composite metal |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101673693A (en) * | 2009-09-22 | 2010-03-17 | 贵州振华风光半导体有限公司 | Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof |
| CN205428913U (en) * | 2016-03-09 | 2016-08-03 | 上海道之科技有限公司 | Power semiconductor module |
| CN110164780A (en) * | 2018-01-25 | 2019-08-23 | 安徽华晶微电子材料科技有限公司 | A kind of lead wire connection method of integrated circuit |
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| CN110676184A (en) | 2020-01-10 |
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