CN103295918B - A kind of preparation method of high-power field-effect transistor aluminium-gold bonding transition plate - Google Patents
A kind of preparation method of high-power field-effect transistor aluminium-gold bonding transition plate Download PDFInfo
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- CN103295918B CN103295918B CN201310207891.3A CN201310207891A CN103295918B CN 103295918 B CN103295918 B CN 103295918B CN 201310207891 A CN201310207891 A CN 201310207891A CN 103295918 B CN103295918 B CN 103295918B
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- aluminium
- gold
- transition plate
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- gold bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48491—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
A preparation method for high-power field-effect transistor aluminium-gold bonding transition plate, the preparation method of described aluminium-gold bonding transition plate comprises the following steps: the selection of (1) aluminium flake material and cleaning; (2) one side of aluminium sheet is steamed upper gold; (3) Alloying Treatment, strengthens the ohmic contact of layer gold and aluminium; (4) the transition plate material of different size is cut into as requested.When aluminium-gold bonding transition plate is used for high-purity aluminium wire bonding, the golden titanium alloy face (4) of aluminium-gold bonding transition plate is welded in the Gold plated Layer (2) of gold-plated stem stem by solder (3); The high-purity aluminium wire of the upper welding (1) in the aluminium face (11) of aluminium-gold bonding transition plate.Aluminium prepared by the present invention-gold bonding transition plate, for high-purity aluminium wire bonding, can be eliminated intermetallic compound that aluminium-gold bonding produces and the adverse effect that Ke Kendaer effect is brought, can not affect bond strength and the conducting resistance of lead-in wire.The present invention is applicable to high-power FET wire bonding.
Description
Technical field
The present invention relates to a kind of preparation method of high-power field-effect transistor aluminium-gold bonding transition plate, belong to field effect transistor manufacturing process technology field.
Background technology
Wire bonding is committed step in semiconductor production later process, remains one of main way of semiconductor packaged inner interconnection within considerable time.Show according to correlative study, in semiconductor device failure event, the wire bonding failure mode caused that lost efficacy accounts for 49%, therefore the reliability effect that semiconductor packaged inner interconnection uses long term device is very large.
High-power field-effect transistor ultrasonic bonding uses high-purity aluminium wire to be bonded on gold-plated stem stem and realizes interconnected.In bonding, high-temperature storage, these steps of device aging, the high temperature at bonding place, electric field and steam effect will make gold-aluminium bonding place form intermetallic compound, simultaneously because Kinkendal Effect forms cavity.This structure, at Long-Time Service or after meeting high temperature, there will be the situations such as pressure welding intensity reduces, the large even de-key of contact resistance change, finally causes the electrical property of device to be degenerated or open circuit at gold-aluminium bonding place.
Be generally directly be bonded on gold-plated post by high-purity aluminium wire at present, structure as shown in Figure 1.Or adopt the method for thinning Gold plated Layer, although this can reduce Kinkendal Effect, also therefore can reduce the intensity of wire bonding.
Summary of the invention
The object of the invention is, because of the reliability challenges that intermetallic compound and Kinkendal Effect produce after high-purity aluminium wire is bonded to gold-plated stem stem in encapsulating for high-power field-effect transistor, a kind of preparation method of high-power field-effect transistor wire bonding transition plate is proposed.
Technical scheme of the present invention is, aluminium-Jin transition plate by preparation a kind of aluminium-gold bonding transition plate, and is applied to aluminium-gold bonding system by the present invention.High-purity aluminium wire is used to be bonded in the aluminium surface of transition plate, this bonding pattern can eliminate intermetallic compound that aluminium-gold bonding produces and the adverse effect that Kinkendal Effect brings, also can not affect the bond strength of lead-in wire, the conduction resistance value of device can not be increased.
Preparation method's step of aluminium-gold bonding transition plate is as follows:
(1) selection of aluminium flake material and cleaning.One piece of area is selected to be 100 ~ 300mm
2, thickness is the pure aluminum plate (99.9%) of 0.3mm, use the method for chemical cleaning to remove the impurity such as particle, oxide on surface, put into ethanol ultrasonic wave and clean, then use deionized water rinsing.
(2) one side of aluminium sheet is steamed upper gold.First make deposited by electron beam evaporation platform be the titanium coating of about 0.1 μm in evaporation a layer thickness for aluminium sheet, evaporation a layer thickness is the layer gold of 1.5 ~ 2.0 μm on this basis, forms golden titanium alloy face.
(3) Alloying Treatment.In the atmosphere of uniform temperature and High Purity Nitrogen, Alloying Treatment is carried out to transition plate, strengthen the ohmic contact of layer gold and aluminium.
(4) use slicing machine, be cut to the transition plate material of the different sizes such as 1.0 ㎜ × 1.0 mm and 1.5 ㎜ × 1.5mm.
(5) use chemical cleaning and put into ethanol ultrasonic cleaning, removing burr and the metallic particles at transition plate edge.
The using method that aluminium-gold bonding transition plate is used for high-purity aluminium wire bonding is as follows:
The golden titanium alloy face of aluminium-gold bonding transition plate is welded in the Gold plated Layer of gold-plated stem stem by solder; High-purity aluminium wire is welded in the another side aluminium face of aluminium-gold bonding transition plate.
the invention has the beneficial effects as follows, aluminium prepared by the present invention-gold bonding transition plate is for high-purity aluminium wire bonding, this bonding pattern can eliminate intermetallic compound that aluminium-gold bonding produces and the adverse effect that Kinkendal Effect brings, also can not affect the bond strength of lead-in wire, the conduction resistance value of device can not be increased.
The present invention is applicable to high-power FET wire bonding.
Accompanying drawing explanation
Fig. 1 is the traditional structure schematic diagram that high-purity aluminium wire is bonded on gold-plated post;
Fig. 2 is aluminium-Jin transition plate structural representation;
Fig. 3 is the structural representation of the aluminium-gold bonding system using aluminium-Jin transition plate;
Picture in picture number: 1 is high-purity aluminium wire; 2 is Gold plated Layer; 3 is solders; 4 is golden titanium alloys; 11 is aluminium; 12 is gold; 13 is titaniums.
Embodiment
The specific embodiment of the present invention as shown in Figure 3.
Embodiment of the present invention aluminium-gold bonding transition plate is prepared in the steps below:
(1) selection of aluminium flake material and cleaning.Select the purity that one piece of diameter is 50mm, thickness is 0.3mm to be the aluminium sheet of 99.9%, use the method for chemical cleaning to remove the impurity such as particle, oxide on surface, put into ethanol ultrasonic wave and clean, then use deionized water rinsing.
(2) one side of aluminium sheet is steamed upper gold.First make deposited by electron beam evaporation platform be the titanium coating of about 0.1 μm in evaporation a layer thickness for aluminium sheet, evaporation a layer thickness is the layer gold of 1.5 ~ 2.0 μm on this basis, forms golden titanium alloy face.
(3) Alloying Treatment.Transition plate is placed in the High Purity Nitrogen atmosphere that flow is 700 ~ 1000mL/min, maintains the temperature at 500 ~ 520 DEG C, 20 ± 2 minutes time, Alloying Treatment is carried out to transition plate, strengthen the ohmic contact of layer gold and aluminium.
(4) use slicing machine, be cut to the aluminium-gold bonding transition plate material of 1.0 ㎜ × 1.0 mm and 1.5 ㎜ × 1.5mm according to the requirement of assembling shell.
By the aluminium obtained by said method-gold bonding transition plate by being used for aluminium-gold bonding system shown in Fig. 3.
The golden titanium alloy face 4 of aluminium-gold bonding transition plate is welded in the Gold plated Layer 2 of gold-plated stem stem by solder 3; The aluminium face 11 of aluminium-gold bonding transition plate is welded high-purity aluminium wire 1.
High-purity aluminium wire is used to be bonded in the aluminium surface of aluminium-gold bonding transition plate, this bonding pattern can eliminate intermetallic compound that aluminium-gold bonding produces and the adverse effect that Kinkendal Effect brings, also the bond strength of lead-in wire can not be affected, less on the conducting resistance impact of device.
Claims (1)
1. a preparation method for high-power field-effect transistor aluminium-gold bonding transition plate, is characterized in that, preparation method's step of described aluminium-gold bonding transition plate is as follows:
(1) selection of aluminium flake material and cleaning; One piece of area is selected to be 100 ~ 300mm
2, thickness be the purity of 0.3mm is the aluminium sheet of 99%, use the method for chemical cleaning to remove the impurity such as particle, oxide on surface, put into ethanol ultrasonic wave and clean, then use deionized water rinsing;
(2) one side of aluminium sheet is steamed upper gold; First make deposited by electron beam evaporation platform be the titanium coating of about 0.1 μm in evaporation a layer thickness for aluminium sheet, evaporation a layer thickness is the layer gold of 1.5 ~ 2.0 μm on this basis, forms golden titanium alloy face;
(3) Alloying Treatment, is placed in the High Purity Nitrogen atmosphere that flow is 700 ~ 1000mL/min, maintains the temperature at 500 ~ 520 DEG C, 20 ± 2 minutes time, carry out Alloying Treatment to transition plate by transition plate, strengthen the ohmic contact of layer gold and aluminium;
(4) use slicing machine, be cut to the transition plate material of 1.0 ㎜ × 1.0mm and 1.5 ㎜ × 1.5mm different sizes;
(5) use chemical cleaning and put into ethanol ultrasonic cleaning, removing burr and the metallic particles at transition plate edge.
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| CN201310207891.3A CN103295918B (en) | 2013-05-30 | 2013-05-30 | A kind of preparation method of high-power field-effect transistor aluminium-gold bonding transition plate |
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| CN201310207891.3A CN103295918B (en) | 2013-05-30 | 2013-05-30 | A kind of preparation method of high-power field-effect transistor aluminium-gold bonding transition plate |
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| CN103295918A CN103295918A (en) | 2013-09-11 |
| CN103295918B true CN103295918B (en) | 2015-08-12 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105024130A (en) * | 2015-05-19 | 2015-11-04 | 北京中科飞鸿科技有限公司 | Lead bonding method for surface acoustic wave filter |
| CN110676184B (en) * | 2019-08-27 | 2021-11-02 | 华东光电集成器件研究所 | Interconnection method for metal shell lead |
| CN111180318B (en) * | 2020-01-06 | 2023-08-11 | 贵州振华风光半导体股份有限公司 | Method for improving bonding quality in integrated circuit by in-situ bonding technology |
| CN112151400B (en) * | 2020-09-23 | 2023-04-21 | 锦州七七七微电子有限责任公司 | Method for solving problem of bonding of SMD tube shell with gold-aluminum system |
| CN113257691B (en) * | 2021-04-23 | 2024-01-02 | 天津工业大学 | Power module lead interconnection method capable of reducing thermal stress |
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| CN101047135A (en) * | 2006-03-31 | 2007-10-03 | 万国半导体股份有限公司 | Gold/silicon eutectic die bonding method |
| CN101673693A (en) * | 2009-09-22 | 2010-03-17 | 贵州振华风光半导体有限公司 | Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof |
| CN201498510U (en) * | 2009-09-22 | 2010-06-02 | 贵州振华风光半导体有限公司 | High-reliability thick film hybrid integrated circuit bonding system |
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Patent Citations (3)
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|---|---|---|---|---|
| CN101047135A (en) * | 2006-03-31 | 2007-10-03 | 万国半导体股份有限公司 | Gold/silicon eutectic die bonding method |
| CN101673693A (en) * | 2009-09-22 | 2010-03-17 | 贵州振华风光半导体有限公司 | Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof |
| CN201498510U (en) * | 2009-09-22 | 2010-06-02 | 贵州振华风光半导体有限公司 | High-reliability thick film hybrid integrated circuit bonding system |
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