CN115172174A - Packaging structure for realizing bonding wires in bare copper area and manufacturing method thereof - Google Patents
Packaging structure for realizing bonding wires in bare copper area and manufacturing method thereof Download PDFInfo
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- CN115172174A CN115172174A CN202210864628.0A CN202210864628A CN115172174A CN 115172174 A CN115172174 A CN 115172174A CN 202210864628 A CN202210864628 A CN 202210864628A CN 115172174 A CN115172174 A CN 115172174A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 89
- 239000010949 copper Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 21
- 229910000679 solder Inorganic materials 0.000 claims abstract description 247
- 229910052751 metal Inorganic materials 0.000 claims abstract description 171
- 239000002184 metal Substances 0.000 claims abstract description 171
- 238000003466 welding Methods 0.000 claims abstract description 116
- 238000005476 soldering Methods 0.000 claims abstract description 43
- 230000005496 eutectics Effects 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 39
- 235000014820 Galium aparine Nutrition 0.000 claims description 36
- 240000005702 Galium aparine Species 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 27
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 26
- 229910052709 silver Inorganic materials 0.000 claims description 26
- 239000004332 silver Substances 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000004021 metal welding Methods 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 183
- 238000007747 plating Methods 0.000 description 12
- 230000006872 improvement Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000010892 electric spark Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 241000196324 Embryophyta Species 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical group [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004649 discoloration prevention Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention discloses a packaging structure for realizing bonding wires in a bare copper area and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: providing a lead frame and at least one chip; forming a welding layer on the upper surface of the pin; forming a metal solder paste layer on the partial area of the bare copper area on the surface of the lead frame; attaching the chip to the upper surface of the bare copper area; heating to make the metal soldering paste layer in a semi-molten state, and when the metal soldering paste layer is in the semi-molten state, at least manufacturing a first solder ball and a second solder ball on the upper surface of the metal soldering paste layer, so that the bottom surfaces and partial side surfaces of the first solder ball and the second solder ball and the metal soldering paste layer form a eutectic structure; the first welding balls are electrically connected with the welding pads through the first welding wires, the second welding balls are electrically connected with the welding layer through the second welding wires, the chip is electrically connected with the pins through the first welding wires, the metal soldering paste layer and the second welding wires in sequence, the length of the welding wires is shortened, and the stability of the packaging structure is enhanced.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a packaging structure for realizing bonding wires in a bare copper area and a manufacturing method thereof.
Background
The lead frame is used as a chip carrier of an integrated circuit, is a key structural member for realizing the electrical connection between a leading-out end of an internal circuit of a chip and an external lead by means of a bonding wire to form an electrical circuit, plays a role of a bridge connected with an external lead, needs to use the lead frame in most semiconductor integrated blocks, and is an important basic material in the electronic information industry.
The existing lead frame welding technology has two welding processes, one is an aluminum wire or aluminum tape process which can realize the electrical connection between a chip and a bare copper surface on a lead frame, but because the size of the aluminum wire/aluminum tape is larger, the welding process is only limited to the chip with a large-size bonding pad and a large-size bare copper area, and for the chip with a small-size chip or a small bonding pad, the aluminum wire or aluminum tape process cannot be utilized to realize effective welding; the other is a gold copper wire process, which can perform a welding process for a chip of a small-size bonding pad, but can only realize direct interconnection between the chip and a silver-plated pin, and cannot weld a wire in a bare copper area, but the length of the wire from a chip lead to the pin is long, so that the routing difficulty is high, and the risk of toppling and sinking of the wire is easily caused in a subsequent packaging process.
Disclosure of Invention
The invention aims to provide a packaging structure for realizing bonding wires in a bare copper area and a manufacturing method thereof.
In order to achieve one of the above objectives, an embodiment of the present invention provides a method for manufacturing a wire-bonding package structure in a bare copper area, the method comprising:
providing a lead frame, wherein the lead frame comprises at least one base island and pins distributed on the periphery of the base island, and the surface of the base island is a bare copper area;
forming a welding layer on the upper surface of the pin;
forming a metal solder paste layer on part of the upper surface of the bare copper area;
providing at least one chip, and attaching the chip above the bare copper area;
heating to enable the metal soldering paste layer to be in a semi-melting state, and when the metal soldering paste layer is in the semi-melting state, at least manufacturing a first welding ball and a second welding ball on the upper surface of the metal soldering paste layer, so that the bottom surfaces and partial side surfaces of the first welding ball and the second welding ball and the metal soldering paste layer form a co-gold structure;
and electrically connecting the first welding balls with the welding pads on the upper surface of the chip through first welding wires, electrically connecting the second welding balls with the welding layer through second welding wires, and electrically connecting the chip with the pins through the first welding wires, the metal paste layer and the second welding wires in sequence.
As a further improvement of an embodiment of the present invention, the forming of the metal paste layer on the partial upper surface of the bare copper region specifically includes:
and spraying solder paste with the thickness of 5-25 mu m on the partial area of the upper surface of the bare copper area by using printing/spot/laser to form a solder paste layer as the metal solder paste layer.
As a further improvement of an embodiment of the present invention, the heating makes the metal solder paste layer in a semi-molten state, and when the metal solder paste layer is in the semi-molten state, at least a first solder ball and a second solder ball are fabricated on the upper surface of the metal solder paste layer, so that the bottom surfaces and partial side surfaces of the first solder ball and the second solder ball and the metal solder paste layer form a eutectic structure, specifically including:
setting welding temperature to enable the metal welding paste layer to be in a semi-molten state;
melting the reserved welding wires of the cleaver edge at partial areas of the upper surface of the metal welding paste layer to form first welding balls and second welding balls, wherein the bottom surfaces and partial side surfaces of the first welding balls and the second welding balls and the metal welding paste layer form a co-gold structure at the welding temperature, and the upper surfaces of the first welding balls and the second welding balls are higher than the upper surface of the metal welding paste layer;
and cutting off the bonding wires connected with the first welding balls and the second welding balls by using the cleaver.
As a further improvement of an embodiment of the present invention, the forming a solder layer on the surface of the pin specifically includes:
and forming a silver coating on the upper surface of the pin by using an electroplating process.
As a further improvement of an embodiment of the present invention, the forming a welding layer on the surface of the pin specifically includes:
and spraying solder paste on the upper surface of the pin by using a printing/point/laser process to form another metal solder paste layer.
As a further improvement of an embodiment of the present invention, the electrically connecting the first solder ball and the pad on the upper surface of the chip by a first bonding wire, and the electrically connecting the second solder ball and the pin by a second bonding wire specifically includes:
controlling the cleaver to convey the first bonding wire to melt on the bonding pad to form a third welding ball, and bonding the first bonding wire to the first welding ball;
and controlling the cleaver to convey the second bonding wire to melt on the silver coating to form a fourth solder ball, and bonding the second bonding wire to the second solder ball through a lead.
As a further improvement of an embodiment of the present invention, the electrically connecting the first solder balls and the pads on the upper surface of the chip by first bonding wires, and the electrically connecting the second solder balls and the pins by second bonding wires specifically include:
controlling the cleaver to convey the first bonding wire to melt on the bonding pad to form a third welding ball, and bonding the first bonding wire to the first welding ball;
controlling the chopper to convey the second bonding wire to melt on the other metal paste layer to form a fourth welding ball, wherein the bottom surface and partial side surface of the fourth welding ball and the other metal paste layer form a co-gold structure at the welding temperature, and the upper surface of the fourth welding ball is higher than that of the other metal paste layer;
controlling the cleaver to bond the second wire bond to the second solder ball.
The invention provides a packaging structure for realizing bonding wires in a bare copper area, which is manufactured by adopting the manufacturing method for realizing the packaging structure for the bonding wires in the bare copper area according to any one of the above embodiments.
The invention provides a packaging structure for realizing bonding wires in a bare copper area, which comprises a lead frame and at least one chip, wherein the lead frame comprises at least one base island and pins distributed on the periphery of the base island, the surface of the base island is provided with the bare copper area, the chip is arranged above the bare copper area, the upper surface of the chip is provided with at least one bonding pad, the upper surface of the pin is provided with a welding layer, and the bonding layer is arranged on the upper surface of the pin,
the upper surface of the bare copper area is also provided with a metal solder paste layer in a partial area, the upper surface of the metal solder paste layer is provided with at least a first solder ball and a second solder ball, and the bottom surfaces and partial side surfaces of the first solder ball and the second solder ball are arranged in the metal solder paste layer and form a co-gold structure with the metal solder paste layer;
the first welding balls are connected with the welding pads through first welding wires, the second welding balls are connected with the welding layers through second welding wires, and the chip is electrically connected with the pins sequentially through the first welding wires, the metal soldering paste layer and the second welding wires.
As a further improvement of an embodiment of the present invention, upper surfaces of the first solder balls and the second solder balls are higher than an upper surface of the metal paste layer.
In a further improvement of an embodiment of the present invention, the thickness of the metal paste layer is 5 to 25 μm.
As a further improvement of an embodiment of the present invention, the first bonding wire is formed with a third solder ball at one end connected to the pad, and the other end is connected to the first solder ball.
As a further improvement of an embodiment of the present invention, the soldering layer is a silver-plated layer, and the second solder ball is connected to the silver-plated layer through a second bonding wire.
As a further improvement of the embodiment of the present invention, the soldering layer is another metal solder paste layer, the second bonding wire has a fourth solder ball formed at one end connected to the another metal solder paste layer, a bottom surface and a part of a side surface of the fourth solder ball are disposed in the another metal solder paste layer and form a co-gold structure with the another metal solder paste layer, an upper surface of the fourth solder ball is higher than an upper surface of the another metal solder paste layer, and another end of the second bonding wire is connected to the second solder ball.
The invention has the beneficial effects that: forming a metal soldering paste layer on the upper surface of a part of a bare copper area of a lead frame, manufacturing at least two solder balls on the metal soldering paste layer, and respectively bonding the two solder balls to a chip bonding pad and a pin by leads to realize that the chip and the pin can be electrically connected through the bare copper area, thereby greatly reducing the length of a welding wire which is directly bonded to the pin by the chip bonding pad by the leads in the prior art; and the metal soldering paste layer is in a semi-molten state in a heating state, and the bottom surface and partial surface of the solder ball manufactured on the metal soldering paste layer can form a co-gold structure with the metal soldering paste layer, so that the welding bonding force is enhanced.
Drawings
Fig. 1 is a schematic flow chart illustrating a manufacturing method for implementing a wire-bonding package structure in a bare copper area in embodiments 1 and 2 of the present invention.
Fig. 2 (a) - (f) are schematic structural diagrams of manufacturing steps for implementing the wire-bonding packaging structure of bare copper area in embodiments 1 and 2 of the present invention.
Fig. 3 is a side view of a package structure implementing wire bonding of bare copper areas in embodiment 3 of the invention.
Fig. 4 is a top view of a package structure implementing wire bonding of a bare copper area in embodiment 3 of the invention.
Fig. 5 is a side view of a package structure implementing wire bonding of bare copper areas in embodiment 4 of the invention.
Fig. 6 is a top view of a package structure implementing wire bonding of a bare copper area in embodiment 4 of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention and are not to be construed as limiting the present invention.
For convenience in explanation, the description herein uses terms indicating relative spatial positions, such as "upper," "lower," "rear," "front," and the like, to describe one element or feature's relationship to another element or feature as illustrated in the figures. The term spatially relative position may encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "above" other elements or features would then be oriented "below" or "above" the other elements or features. Thus, the exemplary term "below" can encompass both a spatial orientation of below and above.
Example 1
As shown in fig. 1, the present embodiment provides a method for manufacturing a wire-bonding package structure with a bare copper area, including the steps of:
s1: providing a lead frame, wherein the lead frame comprises at least one base island and pins distributed on the periphery of the base island, and the surface of the base island is a bare copper area;
s2: forming a welding layer on the upper surface of the pin;
s3: forming a metal solder paste layer on part of the upper surface of the bare copper area;
s4: providing at least one chip, and attaching the chip to the upper part of the bare copper area;
s5: heating to make the metal soldering paste layer in a semi-molten state, and when the metal soldering paste layer is in the semi-molten state, at least manufacturing a first solder ball and a second solder ball on the upper surface of the metal soldering paste layer, so that the bottom surfaces and partial side surfaces of the first solder ball and the second solder ball and the metal soldering paste layer form a eutectic structure;
s6: the first welding balls are electrically connected with the welding pads on the upper surface of the chip through the first welding wires, and the second welding balls are electrically connected with the pins through the second welding wires.
Corresponding to step S1 and step S2, as shown in fig. 2 (a), a lead frame 1 is provided, specifically, the lead frame 1 includes a base island 11 and pins 12 distributed on the periphery of the base island 11, and the upper surface of the base island 11 is a bare copper area 13. Forming a welding layer 2 on the upper surface of the pin, which specifically comprises:
the welding layer 2 is a silver coating formed on the upper surface of the pin 12 by using an electroplating process, and the main process steps comprise: the steps of feeding, electrolytic degreasing, activation, pre-silver plating, partial silver plating, silver stripping, silver glue diffusion prevention, copper discoloration prevention, drying and material receiving are the prior art, and the invention is not described herein in detail. The forming thickness of the silver coating 2 can be designed according to actual requirements, the silver coating 2 is not too thin or too thick, the silver coating 2 is too thin, the risks of falling off, welding failure and the like exist, the subsequent routing process is influenced by too thick, and the risk of product packaging is increased due to the increase of the height of a welding line.
In step S3, a metal paste layer 3 is formed on a partial region of the upper surface of the bare copper region 13, which specifically includes:
as shown in fig. 2 (b), a layer of solder paste is formed on the upper surface of the bare copper region 13 by printing, spot printing, laser spraying, or the like, and the formed solder paste layer is formed as the metal solder paste layer 3. Here, the thickness of the metal paste layer 3 should not be too thick or too thin, which may affect the subsequent wire bonding process, and increase the height of the bonding wire, thereby increasing the risk of product packaging, while too thin may affect the subsequent bonding force with the bonding wire, so the thickness of the metal paste layer 3 is controlled to be 5-25 μm. In other embodiments of the present invention, the metal paste layer 3 may be made of other weldable materials that can be in a semi-molten state at the welding temperature.
In step S4, at least one chip 4 is provided, and the chip 4 is attached above the bare copper area 13, which specifically includes:
as shown in fig. 2 (c), before the chip 4 is mounted on the bare copper area 13, a layer of adhesive 5 is coated on the surface of the chip 4 to which the bare copper area 13 is attached, so that the chip 4 is connected and fixed to the lead frame 1. In some embodiments of the present invention, the material of the adhesive layer 5 may be a composite material of one or more of non-conductive glue/conductive glue, film or solder paste.
Furthermore, the upper surface of the chip 4 is provided with at least one welding pad for routing operation, so that the chip 4 is electrically connected with an external circuit.
The present invention does not limit the specific size of the lead frame 1 and the chip 4 provided, and can be selected according to the actual requirements of the product.
In step S5, heating to make the metal solder paste layer 3 in a semi-molten state, and when the metal solder paste layer 3 is in the semi-molten state, at least manufacturing a first solder ball 61 and a second solder ball 62 on the upper surface of the metal solder paste layer 3, so that the bottom surfaces and partial side surfaces of the first solder ball 61 and the second solder ball 62 and the metal solder paste layer 3 form a eutectic structure, which specifically includes:
the wire bonding equipment comprises a cleaver and a bonding wire, wherein the cleaver is used for wire bonding operation, in some embodiments of the invention, the material of the bonding wire comprises but is not limited to one or a mixture of gold, copper, aluminum, silver and palladium, the bonding wire provided in the embodiments is a gold-copper wire, the material of the cleaver is ceramic, specifically, the cleaver comprises two symmetrical clamping parts, and the fixing and moving of the position of the bonding wire are realized through the clamping in two directions.
The package structure in fig. 2 (c) is placed in the apparatus, and a soldering temperature is set, where the soldering temperature can be set according to the characteristics of the metal paste layer 3, and in the present embodiment, the soldering temperature can be set at 180 degrees according to the characteristics of the solder paste, so that the solder paste, i.e., the metal paste layer 3, is in a semi-molten state.
Further, the cleaver is controlled to convey the bonding wires to the position, where the upper surface of the metal paste layer 3 is obtained, of the upper surface, a certain welding power is set, and the reserved bonding wires of the cleaver are respectively melted at the position, where the upper surface of the metal paste layer 3 is obtained, of the upper surface through electric sparks to form a first bonding ball 61 and a second bonding ball 62. At the set welding temperature, because the metal solder paste layer 3 is in a semi-molten state, the bottom surfaces and partial side surfaces of the first solder balls 61 and the second solder balls 62 are combined with the metal solder paste layer 3 to form a eutectic structure, so that the welding bonding force of the bonding wires and the metal solder paste layer 3 is enhanced.
Further, after the first solder balls 61 and the second solder balls 62 are manufactured, the bonding wires connected to the first solder balls 61 and the second solder balls 62 are broken by a cleaver, so as to form the structure shown in fig. 2 (d).
Specifically, the upper surfaces of the first solder balls 61 and the second solder balls 62 are higher than the upper surface of the metal paste layer 3, so that the chopper is prevented from touching the metal paste layer 3, and the pollution of the chopper is avoided. It should be noted that the bonding power is related to the temperature, pressure, ultrasonic energy, and bonding time set in the wire bonding apparatus, and it can be adjusted accordingly according to the actual design process, and it is only necessary to ensure that the bottom surfaces and part of the side surfaces of the first solder balls 61 and the second solder balls 62 formed by melting and the metal paste layer 3 can be combined to form a eutectic structure at the corresponding bonding temperature, and it is only necessary to ensure that the formation heights of the first solder balls 61 and the second solder balls 62 are higher than the metal paste layer 3.
In step S6, electrically connecting the first solder ball to the pad on the upper surface of the chip through the first bonding wire, and electrically connecting the second solder ball to the pin through the second bonding wire, specifically including:
as shown in fig. 2 (e), the first bonding wire 71 is transferred to the upper surface of the bonding pad of the chip 4 by the control of the cleaver, the first bonding wire 71 reserved at the cleaver opening is melted on the bonding pad of the chip 4 to form a third solder ball 63 under a certain current by the electric spark, the first bonding wire 71 is wire-bonded to the first solder ball 61 by the control of the cleaver, the bonding wire is cut off, the bonding wire connection between the bonding pad of the chip 4 and the metal paste layer 3 is completed, and the electrical connection between the chip 4 and the bare copper region 13 is realized.
As shown in fig. 2 (f), the cleaver is controlled to deliver the second bonding wire 72 to the upper surface of the silver coating 2, the second bonding wire 72 reserved at the cleaver opening is melted on the silver coating 2 under a certain current through electric sparks to form a fourth solder ball 64, the cleaver is controlled to bond the second bonding wire 72 to the second solder ball 62 in a lead-bonding manner, the bonding wire is cut off, the bonding wire connection between the silver coating 2 and the metal solder paste layer 3 is completed, and the electrical connection between the pin 12 and the bare copper area 13 is realized.
Of course, the present invention does not limit the sequence of the bonding wires between the bonding pad and the metal paste layer 3 and between the pin 12 and the metal paste layer 3, and the bonding wire process may be performed between the bonding pad and the metal paste layer 3 first, or between the pin 12 and the metal paste layer 3 first.
In this embodiment, the present invention is not limited to the pre-ball-planting on the upper surface of the metal paste layer 3, and the bonding process is performed by wire bonding from the chip 4 and the pins 12 to the ball-planted on the metal paste layer 3. In some other embodiments of the present invention, the riving knife may be controlled to convey the bonding wires to the bonding pads of the chip 4, specifically, the third solder balls 63 are formed on the bonding pads on the upper surface of the chip 4 by melting through the same process on the metal paste layer 3, and the riving knife is controlled to cut off the bonding wires at the connection positions with the third solder balls 63, so as to pre-plant the balls on the bonding pads; and then, the first bonding wire 71 is conveyed to the upper surface area of the metal paste layer 3 by controlling the cleaver, the first bonding wire 71 reserved at the cleaver opening is melted on the metal paste layer 3 to form a first solder ball 61 under certain current through electric sparks, the first bonding wire 71 is lead-bonded to a third solder ball 63 by controlling the cleaver, the bonding wire is cut off, the bonding wire connection between the bonding pad on the chip 4 and the metal paste layer 3 is completed, the electrical connection between the chip 4 and the bare copper area 13 is realized, and the structure shown in fig. 2 (e) is manufactured and formed. For the wire bonding process between the metal paste layer 3 and the silver plating layer 2, it should be noted that, because a good bonding force exists between the bonding wire and the silver plating layer 2, if the cleaver is controlled to bond from the upper surface of the metal paste layer 3 to the upper surface of the silver plating layer 2 by wire bonding, it is not necessary to plant balls on the silver plating layer 2 in advance, specifically, the cleaver is controlled to transmit the second bonding wire 72 to the upper surface area of the metal paste layer 3, the second bonding wire 72 reserved at the cleaver opening is melted on the metal paste layer 3 to form the second solder ball 62 by electric sparks under a certain current, under a certain bonding pressure, the cleaver is controlled to bond the second bonding wire 72 to the silver plating layer 2 by wire bonding, a bonding fish tail structure can be formed on the upper surface of the silver plating layer 2 by cutting off the bonding wire, the bonding wire connection between the silver plating layer 2 and the metal paste layer 3 is completed, and the electrical connection between the pin 12 and the bare copper area 13 is realized.
In this embodiment, the lengths and curvatures of the first bonding wire 71 and the second bonding wire 72 can be designed according to actual product requirements, and can be realized by setting different bonding wire process parameters.
Example 2
The difference between this embodiment and the manufacturing method in embodiment 1 is that the upper surface of the pin 12 is not subjected to silver plating, and in step S2, a soldering layer 2 is formed on the upper surface of the pin 12, which specifically includes:
in the same process as the metal paste layer 3 is formed on the bare copper region 13, a solder paste is formed by spraying on the upper surface of the pin 12 by a printing/spot/laser process, and another metal paste layer is formed, so that the structure shown in fig. 2 (a) is formed. Similarly, the thickness of the other metal solder paste layer is not too thick or too thin, which easily affects the subsequent wire bonding process, and increases the height of the bonding wire, thereby increasing the risk of product packaging, while too thin affects the subsequent bonding force with the bonding wire, so that the thickness of the other metal solder paste layer is controlled to be 5-25 μm. In other embodiments of the present invention, the other metal solder paste layer formed may also be made of other solderable materials that can be in a semi-molten state at soldering temperature.
It should be noted that, in this embodiment, at the set soldering temperature, the other metal paste layer on the pin 12 is also in a semi-molten state, and for the bonding process between the metal paste layer 3 and the other metal paste layer on the pin 12, a ball may be pre-planted on the upper surface of the metal paste layer 3 to form the second solder ball 62, and then the cleaver is controlled to deliver the second bonding wire 72 to melt on the other metal paste layer on the pin 12 to form the fourth solder ball 64, and the cleaver is controlled to bond the second bonding wire 72 to the second solder ball 62, so as to complete the wire bonding connection between the metal paste layer 3 and the other metal paste layer on the pin 12, and implement the electrical connection between the pin 12 and the bare copper area 13.
Specifically, in this embodiment, the bottom surface and a part of the side surface of the second solder ball 62 are combined with the metal paste layer 3 to form a eutectic structure, the upper surface of the second solder ball 62 is higher than the height of the upper surface of the metal paste layer 3, the bottom surface and a part of the side surface of the fourth solder ball 64 are combined with another metal paste layer on the pin 12 to form a eutectic structure, and the upper surface of the fourth solder ball 64 is higher than the height of the upper surface of another metal paste layer on the pin 12. Certainly, the manufacturing method in this embodiment is not limited to that the ball is pre-planted on the metal solder paste layer 3, the chopper is controlled to deliver the second bonding wire 72 to manufacture the fourth solder ball 64 from another metal solder paste layer on the pin 12, and then the wire is bonded to the second solder ball 62, or the ball is pre-planted on the upper surface of another metal solder paste layer on the pin 12, the fourth solder ball 64 is manufactured first, then the bonding wire is cut off, and then the chopper is controlled to form the second solder ball 62 from the metal solder paste layer 3, and then the wire is bonded to the fourth solder ball 64.
Other methods for achieving electrical connection between the chip 4 and the bare copper region 13 are the same as the manufacturing method in embodiment 1, and the present invention will not be described in detail herein.
In this embodiment, the manufacturing sequence of step S2 and step S3 is not limited herein, and the formation of another metal paste layer on the pin and the formation of a metal paste layer on the bare copper region may be performed simultaneously.
Compared with the manufacturing method in embodiment 1, the manufacturing method provided in this embodiment only needs to form a layer of solder paste on the pin 12, and is simpler than the process of forming a silver plating layer by electroplating, and the bottom surface and part of the side surfaces of the fourth solder balls 64 can form a co-gold structure with the solder paste at a certain soldering temperature, thereby greatly enhancing the soldering bonding force with the pin 12.
The invention provides a packaging structure for realizing bonding wires in a bare copper area, which is manufactured by adopting the manufacturing method for realizing the packaging structure for the bonding wires in the bare copper area in any one of the above embodiments.
Example 3
As shown in fig. 3 and 4, in embodiment 3 of the present invention, a package structure for realizing wire bonding of a bare copper area is provided, and includes a lead frame 1 and at least one chip 4.
The lead frame 1 comprises at least one base island 11 and pins 12 distributed on the periphery of the base island 11, a bare copper area 13 is arranged on the surface of the base island 11, the chip 4 is arranged above the bare copper area 13, and specifically, a bonding adhesive layer 5 is further arranged between the chip 4 and the bare copper area 13, so that the chip 4 is connected and fixed with the lead frame 1. In some embodiments of the present invention, the material of the adhesive layer 5 may be a composite material of one or more of non-conductive glue/conductive glue, film or solder paste.
Further, at least one pad 41 is disposed on the upper surface of the chip 4 for electrically connecting the pad with an external circuit.
The upper surface of the bare copper area 13 is also partially provided with a metal solder paste layer 3, the upper surface of the metal solder paste layer 3 is provided with at least a first solder ball 61 and a second solder ball 62, and the bottom surfaces and partial side surfaces of the first solder ball 61 and the second solder ball 62 are arranged in the metal solder paste layer 3 and form a common-gold structure with the metal solder paste layer 3.
Specifically, the upper surfaces of the first solder balls 61 and the second solder balls 62 are higher than the upper surface of the metal solder paste layer 3, so that the phenomenon that the cleaver touches the metal solder paste layer in the wire bonding process to cause pollution to the cleaver is avoided.
More specifically, the thickness of the metal solder paste layer 3 is 5-25 μm, and the excessive thickness of the metal solder paste layer 3 easily affects the subsequent routing process, so that the height of the bonding wire is increased to increase the risk of product packaging, while the excessive thickness affects the subsequent bonding force with the bonding wire, and can be adjusted according to the actual demand of the product. The size of the metal solder paste layer 3 and the specific position of the metal solder paste layer in the bare copper area 13 can be adjusted according to the actual design requirement of the product.
In this embodiment, the material for forming the metal paste layer 3 is solder paste, but in some other embodiments of the present invention, the material for forming the metal paste layer 3 may be another solderable material that can be in a semi-molten state at a soldering temperature.
Furthermore, a soldering layer 2 is disposed on the upper surface of the pin 12, and the soldering layer 2 may be a silver plating layer or another metal solder paste layer formed by using solder paste.
The first solder balls 61 are connected with the solder pads 41 through first bonding wires 71, the second solder balls 62 are connected with the solder layer 2 through second bonding wires 72, and the chip 4 is electrically connected with the pins 12 sequentially through the first bonding wires 71, the metal solder paste layer 3 and the second bonding wires 72.
Specifically, the first bonding wire 71 has a third solder ball 63 formed at one end connected to the pad 41, the third solder ball 63 is disposed above the pad 41, and the other end of the first bonding wire 71 is connected to the first solder ball 61, so as to realize the electrical connection between the chip 4 and the bare copper area 13. Of course, in another embodiment of the present invention, a third solder ball 63 may be disposed on the die pad 41, the first solder wire 71 is formed with a first solder ball 61 at one end connected to the metal solder paste layer 3, and the other end is connected to the third solder ball 63, which can also achieve the electrical connection between the die 4 and the bare copper area 13, and similarly, in this embodiment, the bottom surface and part of the side surface of the first solder ball 61 formed at one end of the first solder wire 71 connected to the metal solder paste layer 3 are disposed in the metal solder paste layer 3, and form a common-gold structure with the metal solder paste layer 3.
When the solder layer 2 is a silver-plated layer, a second solder ball 62 is formed at one end of the second solder wire 72 connected to the metal paste layer 3, and the joint of the second solder wire 72 and the solder layer 2 is in a fishtail structure (not shown in the figure), so as to electrically connect the pin 12 and the bare copper area 13. Of course, in other embodiments of the present invention, a fourth solder ball 64 may also be formed at one end of the second bonding wire 72 connected to the bonding layer 2, and as shown in fig. 3, the other end of the second bonding wire 72 is connected to the second solder ball 62, so as to achieve electrical connection between the pin 12 and the bare copper area 13.
When the solder layer 2 is another metal solder paste layer formed by using solder paste, the second bonding wire 72 is formed with a fourth solder ball 64 at one end connected to the other metal solder paste layer (solder layer 2), it should be noted that, when the solder layer 2 is another metal solder paste layer formed by using solder paste, the bottom surface and part of the side surface of the fourth solder ball 64 are disposed in the other metal solder paste layer, and form a co-gold structure with the other metal solder paste layer, the upper surface of the fourth solder ball 64 is higher than the upper surface of the other metal solder paste layer, and the other end of the second bonding wire 72 is connected to the second solder ball 62, which can also achieve electrical connection between the pin 12 and the bare copper area 13. Of course, in other embodiments of the present invention, a fourth solder ball 64 is disposed on the upper surface of another metal paste layer (bonding layer 2), and the second solder wire 72 forms the second solder ball 62 at one end connected to the metal paste layer 3, and the other end is connected to the fourth solder ball 64, so that the electrical connection between the pin 12 and the bare copper area 13 can be realized.
The specific package structure may be manufactured according to different wire bonding processes, and the invention is not limited thereto.
Example 4
As shown in fig. 5 and 6, in order to provide a package structure for wire bonding a bare copper region in embodiment 4 of the present invention, unlike the package structure in embodiment 3, in this embodiment, a first metal paste layer 31 and a second metal paste layer 32 are respectively disposed on the upper surface of the bare copper region 13 in a region close to the pad 41 and in a region close to the pin 12.
Specifically, the first solder ball 61 is disposed on the upper surface of the first metal paste layer 31, the third solder ball 63 is formed at one end of the first bonding wire 71 connected to the pad 41, and the other end of the first bonding wire is connected to the first solder ball 61, so as to realize the electrical connection between the chip 4 and the bare copper area 13, but in other embodiments, the third solder ball 63 may be disposed on the pad 41, the first solder ball 61 is formed at one end of the first bonding wire 71 connected to the first metal paste layer 31, and the other end of the first bonding wire is connected to the third solder ball 63, so that the electrical connection between the chip 4 and the bare copper area 13 can be realized.
Furthermore, a second solder ball 62 is disposed on the upper surface of the second metal paste layer 32, a fourth solder ball 64 is formed at one end of the second bonding wire 72 connected to the bonding layer 2, and the other end of the second bonding wire 72 is connected to the second solder ball 62, so as to realize the electrical connection between the pin 12 and the bare copper area 13, but in other embodiments, a fourth solder ball 64 may be disposed on the bonding layer 2, a second solder ball 62 is formed at one end of the second bonding wire 72 connected to the second metal paste layer 32, and the other end of the second bonding wire is connected to the fourth solder ball 64, so that the electrical connection between the pin 12 and the bare copper area 13 can be realized.
The specific package structure may be manufactured according to different wire bonding processes, and the invention is not limited herein.
Other specific structures in this embodiment are the same as the package structure in embodiment 3, and the invention is not described in detail here. Compare the packaging structure in embodiment 3, be provided with metal soldering paste layer respectively on the naked copper district 13 surface that is close to chip 4 and pin 12, can reduce the bonding wire length between chip 4 and pin 12 and the naked copper district 13, improve the stability of bonding wire structure, and reduce the area on metal soldering paste layer 3, practice thrift the cost.
In summary, the invention forms a metal solder paste layer on the upper surface of the bare copper area part of the lead frame, at least two solder balls are made on the metal solder paste layer, and the two solder balls are respectively bonded to the chip bonding pad and the pin by leads, so that the chip and the pin can be electrically connected through the bare copper area, and the length of the bonding wire directly bonding the chip bonding pad to the pin in the prior art is greatly reduced; and the metal soldering paste layer is in a semi-molten state in a heating state, and the bottom surface and partial surface of the solder ball manufactured on the metal soldering paste layer can form a co-gold structure with the metal soldering paste layer, so that the welding bonding force is enhanced.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is merely a detailed description of possible embodiments of the present invention, and it is not intended to limit the scope of the invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention are intended to be included within the scope of the present invention.
Claims (14)
1. A manufacturing method for realizing a bonding wire packaging structure of a bare copper area is characterized by comprising the following steps:
providing a lead frame, wherein the lead frame comprises at least one base island and pins distributed on the periphery of the base island, and the surface of the base island is a bare copper area;
forming a welding layer on the upper surface of the pin;
forming a metal solder paste layer on part of the upper surface of the bare copper area;
providing at least one chip, and attaching the chip above the bare copper area;
heating to enable the metal soldering paste layer to be in a semi-molten state, and when the metal soldering paste layer is in the semi-molten state, at least manufacturing a first solder ball and a second solder ball on the upper surface of the metal soldering paste layer, so that the bottom surfaces and partial side surfaces of the first solder ball and the second solder ball and the metal soldering paste layer form a common-gold structure;
and electrically connecting the first welding balls with the welding pads on the upper surface of the chip through first welding wires, electrically connecting the second welding balls with the welding layer through second welding wires, and electrically connecting the chip with the pins sequentially through the first welding wires, the metal soldering paste layer and the second welding wires.
2. The method according to claim 1, wherein the step of forming a metal paste layer on a partial region of the upper surface of the bare copper region comprises:
and spraying solder paste with the thickness of 5-25 mu m on the partial area of the upper surface of the bare copper area by using printing/spot/laser to form a solder paste layer as the metal solder paste layer.
3. The method of claim 2, wherein the heating is performed to make the metal solder paste layer in a semi-molten state, and when the metal solder paste layer is in the semi-molten state, at least a first solder ball and a second solder ball are formed on the upper surface of the metal solder paste layer, so that the bottom surfaces and partial side surfaces of the first solder ball and the second solder ball form a eutectic structure with the metal solder paste layer, the method comprising:
setting welding temperature to enable the metal welding paste layer to be in a semi-molten state;
melting the reserved welding wires of the cleaver edge at partial areas of the upper surface of the metal welding paste layer to form first welding balls and second welding balls, wherein the bottom surfaces and partial side surfaces of the first welding balls and the second welding balls and the metal welding paste layer form a co-gold structure at the welding temperature, and the upper surfaces of the first welding balls and the second welding balls are higher than the upper surface of the metal welding paste layer;
and cutting off the bonding wires connected with the first welding balls and the second welding balls by using the cleaver.
4. The method of claim 3, wherein forming a bonding layer on the surface of the pin comprises:
and forming a silver coating on the upper surface of the pin by using an electroplating process.
5. The method of claim 3, wherein forming a bonding layer on the surface of the pin comprises:
and spraying solder paste on the upper surface of the pin by using a printing/point/laser process to form another metal solder paste layer.
6. The method of claim 4, wherein the electrically connecting the first solder balls to the pads on the top surface of the chip via first bonding wires and the electrically connecting the second solder balls to the pins via second bonding wires, comprises:
controlling the cleaver to convey the first bonding wire to melt on the bonding pad to form a third welding ball, and bonding the first bonding wire to the first welding ball;
and controlling the cleaver to convey the second welding wire to melt on the silver coating to form a fourth welding ball, and bonding the second welding wire to the second welding ball in a lead bonding mode.
7. The method of claim 5, wherein the electrically connecting the first solder balls to the pads on the top surface of the chip via first bonding wires and the electrically connecting the second solder balls to the pins via second bonding wires comprises:
controlling the cleaver to convey the first bonding wire to be melted on the bonding pad to form a third welding ball, and bonding the first bonding wire to the first welding ball through a lead;
controlling the chopper to convey the second bonding wire to melt on the other metal paste layer to form a fourth welding ball, wherein the bottom surface and partial side surface of the fourth welding ball and the other metal paste layer form a co-gold structure at the welding temperature, and the upper surface of the fourth welding ball is higher than that of the other metal paste layer;
controlling the cleaver to bond the second wire bond to the second solder ball.
8. A package structure for realizing bonding wires in a bare copper area, which is manufactured by the manufacturing method for realizing the package structure for the bonding wires in the bare copper area according to any one of claims 1 to 7.
9. A packaging structure for realizing bonding wires in a bare copper area comprises a lead frame and at least one chip, wherein the lead frame comprises at least one base island and pins distributed on the periphery of the base island, the surface of the base island is provided with the bare copper area, the chip is arranged above the bare copper area, the upper surface of the chip is provided with at least one bonding pad, the upper surface of the pin is provided with a welding layer, the packaging structure is characterized in that,
the upper surface of the bare copper area is also provided with a metal solder paste layer in a partial area, the upper surface of the metal solder paste layer is provided with at least a first solder ball and a second solder ball, and the bottom surfaces and partial side surfaces of the first solder ball and the second solder ball are arranged in the metal solder paste layer and form a co-gold structure with the metal solder paste layer;
the first welding balls are connected with the welding pads through first welding wires, the second welding balls are connected with the welding layers through second welding wires, and the chip is electrically connected with the pins sequentially through the first welding wires, the metal soldering paste layer and the second welding wires.
10. The package structure of claim 9, wherein the upper surfaces of the first solder ball and the second solder ball are higher than the upper surface of the metal paste layer.
11. The package structure for realizing wire bonding of bare copper area according to claim 10, wherein the thickness of the metal paste layer is 5-25 μm.
12. The package structure of claim 11, wherein the first wire is formed with a third solder ball at one end connected to the pad, and the other end is connected to the first solder ball.
13. The package structure for achieving bonding wires in bare copper areas according to claim 12, wherein the bonding layer is a silver-plated layer, and the second solder balls are connected to the silver-plated layer through second bonding wires.
14. The package structure for achieving wire bonding on a bare copper area according to claim 12, wherein the bonding layer is another metal solder paste layer, the second bonding wire has a fourth solder ball formed at one end connected to the another metal solder paste layer, a bottom surface and a part of a side surface of the fourth solder ball are disposed in the another metal solder paste layer and form a co-gold structure with the another metal solder paste layer, an upper surface of the fourth solder ball is higher than an upper surface of the another metal solder paste layer, and another end of the second bonding wire is connected to the second solder ball.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210864628.0A CN115172174A (en) | 2022-07-21 | 2022-07-21 | Packaging structure for realizing bonding wires in bare copper area and manufacturing method thereof |
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| CN202210864628.0A CN115172174A (en) | 2022-07-21 | 2022-07-21 | Packaging structure for realizing bonding wires in bare copper area and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117577549A (en) * | 2024-01-18 | 2024-02-20 | 苏州锐杰微科技集团有限公司 | Ball mounting machine for chip packaging and working method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117577549A (en) * | 2024-01-18 | 2024-02-20 | 苏州锐杰微科技集团有限公司 | Ball mounting machine for chip packaging and working method thereof |
| CN117577549B (en) * | 2024-01-18 | 2024-04-23 | 苏州锐杰微科技集团有限公司 | Ball mounting machine for chip packaging and working method thereof |
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