CN203690252U - ICP etching machine with temperature test function - Google Patents
ICP etching machine with temperature test function Download PDFInfo
- Publication number
- CN203690252U CN203690252U CN201420013256.1U CN201420013256U CN203690252U CN 203690252 U CN203690252 U CN 203690252U CN 201420013256 U CN201420013256 U CN 201420013256U CN 203690252 U CN203690252 U CN 203690252U
- Authority
- CN
- China
- Prior art keywords
- temperature
- etching machine
- icp etching
- test function
- temperature test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model provides an ICP etching machine with a temperature test function. The etching machine mainly overcomes problems that the conventional ICP etching machine fails to detect temperature of an aluminum pallet, thereby causing unstable processing of wafers and influencing etching rate and selectivity ratio. The ICP etching machine comprises an aluminum pallet. The aluminum pallet is provided with a temperature test device used for detecting real-time temperature of the aluminum pallet. On the basis of the conventional ICP etching machine, the ICP etching machine provided by the utility model is additionally provided with the temperature test device to accurately obtain the actual temperature of the aluminum pallet. Furthermore, an ice maker is provided to set proper temperature to meet the requirements of cooling.
Description
Technical field
The utility model belongs to LED technical field, relates generally to a kind of ICP etching machine with temperature test function.
Background technology
LED epitaxial substrate figure is in manufacture process at present, usually on wafer, make the pattern (Pattern) of superfine micro-dimension, the topmost generation type of these patterns is to use etching (Etching) technology, the photoresistance graph transfer printing that micro-shadow (Photo-Lithography) technology is produced is on the material under photoresistance, and electricity slurry reactive ion etching is the material electricity consumption slurry gas of unwanted part on wafer to be removed to reach figure shift (Pattern Transfer) object.
Reactive ion etch belongs to the one of dry etching, mechanically belong to inductive coupling, as shown in Figure 1, which is in reaction chamber, to pass into gas, controlling vacuum-pumping system makes environment be maintained at low pressure (～1-20mTorr) state, utilize the 13.56MHz low-power radio frequency on bottom electrode to produce bias voltage, make electricity slurry intermediate ion or free radical bombardment or react and cause etching with substrate.
In reactive ion etch reaction chamber, there are 2 electrodes, bottom electrode connects radio-frequency power supply and water flowing is cooling, and can pass into helium when heat-conduction medium help cooling, etched wafer is placed on lower electrode plate, and the very air distribution disk that powers on, etching gas evenly injects chamber by top, and the gas after reaction is discharged by the exhaust pipe of cavity below surrounding.
ICP(Inductively Coupled Plasma inductively coupled plasma) etching machine be will have the aluminium pallet of carrying wafer be placed on the chuck in cavity, make aluminium pallet and chuck close contact by pressure ring device, wherein chuck assembly reduces temperature by the cooling mode of ice maker, make aluminium pallet reach the effect of cooling by the mode of transmitting, the leachy device in back of aluminium pallet simultaneously, make the temperature fast reducing of aluminium pallet by passing into of helium, but we cannot grasp the actual temp of aluminium pallet, and aluminium tray surface reaction zone temperature is most important concerning process for stabilizing, directly affect etch-rate and select ratio.
Summary of the invention
The utility model provides a kind of ICP etching machine with temperature test function, has mainly solved existing ICP etching machine and cannot detect the actual temp of aluminium pallet, thereby caused wafer processing unstable, affects the problem of etch-rate and selection ratio.
Concrete technical solution of the present utility model is as follows:
This ICP etching machine with temperature test function comprises aluminium pallet, on described aluminium pallet, is provided with the temperature testing device for detecting aluminium pallet real time temperature.
Said temperature testing apparatus comprises at least one temperature probe and at least one temperature controller, and temperature probe is identical with temperature controller quantity; Described temperature probe and temperature controller are symmetricly set on the upper and lower both sides of aluminium pallet, and temperature probe is arranged on carrying wafer one side.
Above-mentioned temperature probe and temperature controller are three, and are evenly distributed on aluminium pallet.
Advantage of the present utility model is as follows:
This ICP etching machine increases for detecting the device of temperature on the basis of original ICP etching machine chuck assembly, thereby grasps accurately the actual temperature of aluminium pallet, and rational temperature is set to meet cooling effect by ice maker.
Brief description of the drawings
Fig. 1 is the structural representation of existing ICP etching machine;
Fig. 2 is the structural representation that the utlity model has the ICP etching machine of temperature test function;
Accompanying drawing is detailed as follows: 1-chuck; 2-aluminium pallet; 3-lowering or hoisting gear; 4-O RunddichtringO; 5-temperature probe; 6-temperature controller.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in detail, as shown in Figure 2:
This this there is temperature test function ICP etching machine comprise chuck, aluminium pallet, lowering or hoisting gear, O RunddichtringO and for detecting at least one group of temperature testing device of aluminium pallet real time temperature; One group of temperature testing device is made up of a temperature probe and a temperature controller; Temperature probe and temperature controller are symmetrically distributed in the both sides up and down of aluminium pallet, temperature probe is arranged on aluminium pallet for carrying wafer one side, temperature controller is arranged on aluminium pallet opposite side, in the time that temperature testing device is many groups, multiple temperature probes and temperature controller are evenly distributed on aluminium pallet.Generally, temperature probe and temperature controller are respectively three.
Claims (3)
1. an ICP etching machine with temperature test function, comprises aluminium pallet, it is characterized in that: on described aluminium pallet, be provided with the temperature testing device for detecting aluminium pallet real time temperature.
2. the ICP etching machine with temperature test function according to claim 1, is characterized in that: described temperature testing device comprises at least one temperature probe and at least one temperature controller, and temperature probe is identical with temperature controller quantity; Described temperature probe and temperature controller are symmetricly set on the upper and lower both sides of aluminium pallet, and temperature probe is arranged on carrying wafer one side.
3. the ICP etching machine with temperature test function according to claim 2, is characterized in that: described temperature probe and temperature controller are three, and is evenly distributed on aluminium pallet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420013256.1U CN203690252U (en) | 2014-01-09 | 2014-01-09 | ICP etching machine with temperature test function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420013256.1U CN203690252U (en) | 2014-01-09 | 2014-01-09 | ICP etching machine with temperature test function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203690252U true CN203690252U (en) | 2014-07-02 |
Family
ID=51012124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420013256.1U Expired - Fee Related CN203690252U (en) | 2014-01-09 | 2014-01-09 | ICP etching machine with temperature test function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203690252U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113556926A (en) * | 2021-07-16 | 2021-10-26 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and cooling assembly and cooling method thereof |
-
2014
- 2014-01-09 CN CN201420013256.1U patent/CN203690252U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113556926A (en) * | 2021-07-16 | 2021-10-26 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and cooling assembly and cooling method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101990353B (en) | Plasma processing apparatus and plasma processing method | |
| CN104067375B (en) | Plasma-etching method and plasma-etching apparatus | |
| TWI603368B (en) | Plasma processing apparatus and plasma processing method | |
| TW200741862A (en) | Plasma processing apparatus and method | |
| CN107516625A (en) | A kind of spray head of plasma etching system | |
| CN203690252U (en) | ICP etching machine with temperature test function | |
| CN107393802A (en) | A kind of spray head of plasma etching system | |
| CN102543687B (en) | The lithographic method of the lithographic method of mask layer, etching device and interlayer dielectric layer | |
| CN203787383U (en) | Adaptive coupling plasma etching machine | |
| CN101640230A (en) | Dry etching method for two-color HgCdTe device and etching device thereof | |
| CN204651300U (en) | A kind of carrier and etching apparatus | |
| CN203910743U (en) | Adaptability coupling plasma etching machine | |
| CN105632860A (en) | Plasma processing equipment | |
| CN104616956B (en) | Plasma etching apparatus and plasma etching method | |
| CN104425237B (en) | Substrate lithographic method | |
| CN105448776A (en) | Pallet system used for plasma dry etching | |
| CN104362116A (en) | Air-bearing lower electrode and dry etching device | |
| CN202307823U (en) | Electrode of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials | |
| CN203910744U (en) | Adaptability coupling plasma etching machine | |
| JP2014207221A (en) | Power supply device, power supply method, and substrate processing device using the same | |
| CN113488429A (en) | Semiconductor device and semiconductor processing method | |
| CN204407297U (en) | Semiconductor processing equipment | |
| CN103000544B (en) | A kind of circulation utilization method of phosphorus boron prediffused technique test pieces | |
| CN202259195U (en) | Device for performing dry etching on hard inorganic material substrate | |
| CN202332783U (en) | Low-etching-rate plasma etching chamber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140702 Termination date: 20200109 |