CN202307823U - Electrode of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials - Google Patents
Electrode of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials Download PDFInfo
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- CN202307823U CN202307823U CN201120352699XU CN201120352699U CN202307823U CN 202307823 U CN202307823 U CN 202307823U CN 201120352699X U CN201120352699X U CN 201120352699XU CN 201120352699 U CN201120352699 U CN 201120352699U CN 202307823 U CN202307823 U CN 202307823U
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Abstract
The utility model discloses an electrode of a plasma etcher for carrying out dry etching on substrates made of hard inorganic materials. The electrode comprises a rail guider for fixedly connecting an etching cavity, the rail guider is internally provided with a lifter which can do a lifting motion in the rail guider, the lifter is fixedly connected with a lower electrode tray, the lower electrode tray is arranged above the rail guider, the lower electrode tray comprises a top tray and a bottom tray which are fixedly connected, the lower part of the top tray is provided with a cylindrical groove, an air-blending tray is fixedly installed in the cylindrical groove, gaps are formed between the air-blending tray and the top tray and between the air-blending tray and the bottom tray, a first through hole for leading air to the top tray is arranged at the center of the air-blending tray, and the first through hole is communicated with a cooling air inlet; and the center of the bottom of the bottom tray is provided with a second through hole, the second through hole is isolated from the first through hole, the bottom end of the second through hole is connected with a seal pipe, and the second through hole is communicated with a cooling air outlet. The electrode disclosed by the utility model has an advantage that the cooling effect is good and the etching effect is good further.
Description
Technical field
The utility model relates to the electrode of the hard inorganic material base plate plasma of a kind of dry etching body etching machine.
Background technology
Etching is a kind of considerable processing step in semiconductor fabrication process, microelectronics IC manufacturing process and the minute manufacturing technology, is a kind of main technique that graphical (pattern) that interrelate with photoetching handles.So-called etching, in fact narrow sense understanding is exactly photoetching corrosion, through photoetching photoresist is carried out photolithographic exposure earlier and handles, and falls required part of removing through alternate manner realization corrosion treatment then.Development along with little manufacturing process; On the broad sense, be etched into a kind of general designation of peeling off, remove material through solution, reactive ion or other mechanical system, become a kind of pervasive call of little processing and manufacturing.The simplest the most frequently used classification of etching is dry etching and wet etching.The dry etching kind is a lot, comprises photoablation, gaseous corrosion, plasma etching etc.Its advantage is: anisotropy is good, selects than high, and controllability, flexibility, good reproducibility are prone to realize automation, no chemical waste fluid, and processing procedure is not introduced pollution, and cleanliness factor is high.Shortcoming is: cost is high, complex equipments.The dry etching principal mode has pure chemistry process (like protected type, downstream formula, bucket formula), pure physical process (like ion beam milling), physical and chemical process, the ion etching RIE that responds commonly used, Assisted by Ion Beam free radical etching ICP etc.
Compare with other lithographic technique, the ICP lithographic technique is simple in structure, cost performance is high, the aspect ratio of device is bigger, install more miniaturization and simple to operate.The ICP source has the uniformity in diameter 20cm scope at least simultaneously, can independently control ion concentration and ion energy, has become comparatively desirable plasma source at present.The ICP reaction can obtain the high-density plasma greater than
, in order to realize the advanced course of processing.For example, lose silicon chip at normal temperatures deeply, can obtain high etch rate, vertical wide ratio of high etching and high selectivity keep sidewall steep simultaneously.This etching technics is widely used in various deep erosions, in the making like MEMS.Through the step of a depassivation of adding between passivation and etching, or, rationally regulate other etching parameters, not only can etch anisotropic end face through controlling the thickness of polymeric foil, and can be so that the end face inclination angle changes within the specific limits.Utilize ICP lithographic technique etch silicon sill and
compounds of group can obtain good etching effect equally.
The ICP lithographic technique is widely used in microelectronics, LED and photovoltaic field.The ICP lithographic technique also is used to prepare the substrate of HB-LED.
Sapphire Substrate is the base layer support of LED; On Sapphire Substrate through MOCVD grow successively
low temperature nucleating layer, N type doped layer, MQW (MQW) layer, P type doped layer; Make electrode again, just can process LED.On Sapphire Substrate, do figure through photoetching and etching and just can obtain the graphic sapphire substrate, promptly Patterned Sapphire Substrate is called for short PSS.The purpose of photoetching process is to need the sapphire of etching to appear with photoresist, with the sapphire shielding that does not need etching; The purpose of etching is that part of sapphire etching of being protected by photoresist not, to form figure.Compare with Sapphire Substrate, the graphic sapphire substrate has significant advantage.At first; After Sapphire Substrate carried out graphical treatment; When substrate surface growth
; The lattice mismatch of sapphire with
can reduce; Thereby reduce the helical dislocation that causes by lattice mismatch; Just can reduce the non-radiation recombination of light induced electron-hole effectively, improve the internal quantum efficiency of LED, strengthen the brightness of LED causing owing to helical dislocation; Secondly, because the light that produces from MQW only has the single direction of propagation, if the Sapphire Substrate of light process graphical treatment can increase the scattering of light, this just makes light that a plurality of directions of propagation are arranged.The light ray propagation that produces from MQW is during to air-sapphire interface; If incidence angle is greater than
(refractive index of
air;
is sapphire refractive index); LED is returned in light generation total reflection; If incidence angle is less than
; Light will reflect, and propagates in the air.And the design of LED is unidirectional bright dipping, does not hope that light penetrates from Sapphire Substrate one side.After being PSS, the figure on the Sapphire Substrate has increased the scattering of light, makes light that the more direction of propagation arranged; Just there is more rays generation total reflection to return LED; These light will so just improve the light eduction rate of LED from the exiting surface bright dipping, strengthen the brightness of LED.
It is significant to the brightness that improves LED to make PSS, and the sapphire sheet after the photoetching will could form PSS through over etching, and therefore, etching is the critical process step of making in the PSS technology.The purpose of etching is optionally to remove the part saphire substrate material according to the situation of photoetching.I.e. utilization is in plasmoid
and
carries out physical bombardment and chemical corrosion to Sapphire Substrate; The Sapphire Substrate that is not covered by photoresist is etched away, and that part of Sapphire Substrate that is covered by photoresist is not etched.Like this, after the over etching machine is handled, just on Sapphire Substrate, form figure, process Sapphire Substrate.
The etch rate and the etching homogeneity of sapphire etching machine are most important to the making of Sapphire Substrate.At first, etch rate is fast, and the etch period required for identical etching depth is just few, and production efficiency just can be improved.Secondly, etching homogeneity has conclusive effect for the yield that improves the PSS product.Like good uniformity in the chankings, on the basis that guarantees the luminous efficiency uniformity, on a slice sapphire sheet, just can be partitioned into more LED substrate so; If uniformity is better between the sapphire sheet sheet, 23 sapphire sheet can useless sheet can not occur as the substrate of high-brightness LED so.
Bottom electrode is not only the support of etching system etching substrate, and is that etch chamber ionic medium system passes through bias voltage down, thereby makes the accelerated motion of plasma subtegulum carry out physical bombardment to substrate, with the supporting etching of carrying out of chemical corrosion.
There are problems in the existing bottom electrode that is used for the ICP etching machine of etching inorganic material substrate.At first, electrode disk can only be placed a wafers, causes etching system can only carry out the monolithic etching, is unfavorable for large-scale production.Secondly, in order to obtain etching result preferably, need to adopt gas-cooled method that single substrate is cooled off; Cooling blast is easy to substrate blown afloat and departs from original position; Therefore, electrode system will attach compressing tablet mechanism, and it has increased the difficulty of electrode system design and processing.
Summary of the invention
The bottom electrode that the utility model will solve the existing ICP etching machine that is used for etching inorganic material substrate exists can not large-scale production, baroque problem, and a kind of simple in structure, electrode of the hard inorganic material base plate plasma of the dry etching body etching machine of etching in batches is provided.
The technical scheme that the utility model adopts is:
The electrode of the hard inorganic material base plate plasma of a kind of dry etching body etching machine; Comprise and be used for the guide rail device that is fixedly connected with etch chamber; The lifter that can do elevating movement within it is installed in the said guide rail device, is fixedly connected with the bottom electrode pallet on the said lifter, said bottom electrode pallet is arranged on the top of guide rail device; It is characterized in that: said bottom electrode pallet comprises taking over a business of fixed connection and chassis; Said bottom of taking over a business has cylindrical groove, and said cylindrical groove internal fixation is equipped with even gas dish, said even gas dish and take over a business, be equipped with the gap between the chassis; The center of said even gas dish is provided with leads to first through hole of taking over a business with gas, and said first through hole is communicated with the cold gas inlet; The bottom centre on said chassis has second through hole, and said second through hole and first through hole are isolated setting, and the bottom of said second through hole is connected with sealed tube, and said second through hole is communicated with the cold gas outlet.
Further, said lifter is installed on the screw mandrel that drives its motion, and the bottom of said screw mandrel is connected with the output shaft of servomotor, and on the rotating screw mandrel fixture that is installed in the guide rail device of said screw mandrel, said servomotor is installed in the bottom of guide rail device.
Further, said bottom electrode pallet is fixedly connected on the top of lifter through support bar.
Further, the diameter of said even gas dish is less than the diameter of cylindrical groove.
Further, said take over a business with the chassis between, said take over a business with even gas dish between, all be connected between between said screw mandrel fixture and the guide rail device, between said support bar and the bottom electrode pallet, between said support bar and the lifter, between said servomotor and the guide rail device and said sealed tube and the chassis through screw.
The utility model starts screw mandrel with servomotor and rotates, and the screw mandrel left-right rotation drives moving up and down of lifter, moves up and down and transports wafer thereby lifter drives the bottom electrode pallet.Said bottom electrode pallet can hold up the multi-disc wafer, is applicable to etching in batches.In order to obtain etching result preferably, the bottom electrode pallet needs cooling.The utility model imports to cold gas first through hole and enters in the cylindrical groove of taking over a business from the cold gas inlet through even gas dish; Thereby reach the purpose that cooling is taken over a business; Can avoid the be cooled air-flow of gas of wafer to dash like this, no longer need the compressing tablet system to carry out the compressing tablet operation; And cold gas can flow out from the cold gas outlet through second through hole on chassis, make cold gas from the cold gas inlet, get into cooling endlessly and take over a business, and makes cooling effect more, obtains better etching result.
The use of the utility model:
1, the guide rail device is connected with the etch chamber bottom, adopts the sealing ring sealing between the two;
2, manipulator is sent to the sheet dish center of etch chamber from the forevacuum chamber;
3, start servomotor, its output shaft begins to rotate, and drives screw mandrel and rotates;
4, the rotation of screw mandrel drives the lifter rising;
5, the lifter rising drives the rising of bottom electrode pallet, with sheet dish jack-up certain altitude;
6, manipulator is withdrawn from etch chamber, valve closing;
7, refrigerating gas gets into even gas dish from the cold gas inlet, takes away the heat of bottom electrode pallet, derives from the cold gas outlet;
8, after etching process finished, manipulator got into the center of etch chamber from the forevacuum chamber;
9, servomotor cuts out rotation direction, and bottom electrode pallet and sheet dish begin to descend, and when dropping to the manipulator sustained height, the sheet dish drops on the manipulator, and the bottom electrode pallet continues to drop to the home position;
10, manipulator carries the sheet dish and withdraws from etch chamber.
The beneficial effect of the utility model:
(1) good cooling results of bottom electrode pallet, thus make etching effect good.
(2) because the cooling internally of bottom electrode pallet beginning, avoid the be cooled air-flow of gas of wafer to dash, no longer need the compressing tablet system to carry out compressing tablet and operate, structure is more simple and reliable.
(3) the bottom electrode pallet can hold up the multi-disc wafer, is applicable to etching in batches, is beneficial to large-scale production.
Description of drawings
Fig. 1 is the perspective view of the utility model.
Fig. 2 is the longitudinal sectional view of the utility model.
Embodiment
Come the utility model is further specified below in conjunction with specific embodiment, but the utility model is not confined to these embodiments.One skilled in the art would recognize that the utility model contained in claims scope all alternatives, improvement project and the equivalents that possibly comprise.
With reference to Fig. 1, Fig. 2; The electrode of the hard inorganic material base plate plasma of a kind of dry etching body etching machine comprises being used for the guide rail device 2 that is fixedly connected with etch chamber, and the lifter 4 that can do elevating movement within it is installed in the said guide rail device 2; Be fixedly connected with the bottom electrode pallet on the said lifter 4; Said bottom electrode pallet is arranged on the top of guide rail device 2, said bottom electrode pallet comprise fixed connection take over a business 7 with chassis 8, saidly take over a business 7 bottom and have cylindrical groove; Said cylindrical groove internal fixation is equipped with even gas dish 12; Said even gas dish 12 and take over a business 7, be equipped with the gap between the chassis 8, the center of said even gas dish 12 are provided with gas are led to first through hole 13 of taking over a business, and said first through hole 13 is communicated with cold gas inlet 9; The bottom centre on said chassis 8 has second through hole 14, and said second through hole 14 and first through hole 13 are isolated setting, and the bottom of said second through hole 13 is connected with sealed tube 10, and said second through hole 14 is communicated with cold gas outlet 11.
Said lifter 4 is installed on the screw mandrel 5 that drives its motion, and the bottom of said screw mandrel 5 is connected with the output shaft of servomotor 1, and on the said screw mandrel 5 rotating screw mandrel fixtures 3 that are installed in the guide rail device 2, said servomotor 1 is installed in the bottom of guide rail device 2.
Said bottom electrode pallet is fixedly connected on the top of lifter 4 through support bar 6.
The diameter of said even gas dish 12 is less than the diameter of cylindrical groove.
Said take over a business 7 with chassis 8 between, said take over a business 7 with even gas dish 12 between, all be connected between between said screw mandrel fixture 3 and the guide rail device 2, between said support bar 6 and the bottom electrode pallet, between said support bar 6 and the lifter 4, between said servomotor 1 and the guide rail device 2 and said sealed tube 10 and the chassis 8 through screw.
The utility model starts screw mandrel 5 with servomotor 1 and rotates, and screw mandrel 5 left-right rotation drive moving up and down of lifter 4, moves up and down and transports wafer thereby lifter 4 drives the bottom electrode pallets.Said bottom electrode pallet can hold up the multi-disc wafer, is applicable to etching in batches.In order to obtain etching result preferably, the bottom electrode pallet needs cooling.The utility model imports to cold gas first through hole 13 and enters in 7 the cylindrical groove from cold gas inlet 9 through even gas dish 12; Cool off 7 purpose thereby reach; Can avoid the be cooled air-flow of gas of wafer to dash like this, no longer need the compressing tablet system to carry out the compressing tablet operation; And cold gas can flow out from cold gas outlet 11 through second through hole 14 on chassis 8, cold gas can be entered the mouth from cold gas get into cooling endlessly 9 and take over a business 7, makes cooling effect more, obtains better etching result.
The use of the utility model:
1, guide rail device 2 is connected with the etch chamber bottom, adopts the sealing ring sealing between the two;
2, manipulator is sent to the sheet dish center of etch chamber from the forevacuum chamber;
3, start servomotor 1, its output shaft begins to rotate, and drives screw mandrel 5 and rotates;
4, the rotation of screw mandrel 5 drives lifter 4 risings;
5, lifter 4 risings drive the rising of bottom electrode pallet, with sheet dish jack-up certain altitude;
6, manipulator is withdrawn from etch chamber, valve closing;
7, refrigerating gas gets into even gas dish 12 from cold gas inlet 9, takes away the heat of bottom electrode pallet, derives from cold gas outlet 11;
8, after etching process finished, manipulator got into the center of etch chamber from the forevacuum chamber;
9, servomotor 1 cuts out rotation direction, and bottom electrode pallet and sheet dish begin to descend, and when dropping to the manipulator sustained height, the sheet dish drops on the manipulator, and the bottom electrode pallet continues to drop to the home position;
10, manipulator carries the sheet dish and withdraws from etch chamber.
Claims (5)
1. the electrode of the hard inorganic material base plate plasma of a dry etching body etching machine; Comprise and be used for the guide rail device that is fixedly connected with etch chamber; The lifter that can do elevating movement within it is installed in the said guide rail device, is fixedly connected with the bottom electrode pallet on the said lifter, said bottom electrode pallet is arranged on the top of guide rail device; It is characterized in that: said bottom electrode pallet comprises taking over a business of fixed connection and chassis; Said bottom of taking over a business has cylindrical groove, and said cylindrical groove internal fixation is equipped with even gas dish, said even gas dish and take over a business, be equipped with the gap between the chassis; The center of said even gas dish is provided with leads to first through hole of taking over a business with gas, and said first through hole is communicated with the cold gas inlet; The bottom centre on said chassis has second through hole, and said second through hole and first through hole are isolated setting, and the bottom of said second through hole is connected with sealed tube, and said second through hole is communicated with the cold gas outlet.
2. the electrode of the hard inorganic material base plate plasma of a kind of dry etching according to claim 1 body etching machine; It is characterized in that: said lifter is installed on the screw mandrel that drives its motion; The bottom of said screw mandrel is connected with the output shaft of servomotor; On the rotating screw mandrel fixture that is installed in the guide rail device of said screw mandrel, said servomotor is installed in the bottom of guide rail device.
3. the electrode of the hard inorganic material base plate plasma of a kind of dry etching according to claim 1 and 2 body etching machine, it is characterized in that: said bottom electrode pallet is fixedly connected on the top of lifter through support bar.
4. the electrode of the hard inorganic material base plate plasma of a kind of dry etching according to claim 3 body etching machine, it is characterized in that: the diameter of said even gas dish is less than the diameter of cylindrical groove.
5. the electrode of the hard inorganic material base plate plasma of a kind of dry etching according to claim 4 body etching machine is characterized in that: said take over a business with the chassis between, said take over a business with even gas dish between, all be connected between between said screw mandrel fixture and the guide rail device, between said support bar and the bottom electrode pallet, between said support bar and the lifter, between said servomotor and the guide rail device and said sealed tube and the chassis through screw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120352699XU CN202307823U (en) | 2011-09-20 | 2011-09-20 | Electrode of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120352699XU CN202307823U (en) | 2011-09-20 | 2011-09-20 | Electrode of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202307823U true CN202307823U (en) | 2012-07-04 |
Family
ID=46376665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120352699XU Withdrawn - After Issue CN202307823U (en) | 2011-09-20 | 2011-09-20 | Electrode of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials |
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| Country | Link |
|---|---|
| CN (1) | CN202307823U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102368466A (en) * | 2011-09-20 | 2012-03-07 | 嘉兴科民电子设备技术有限公司 | Electrode of plasma etcher for carrying out dry etching on hard inorganic material substrate |
| CN111006515A (en) * | 2019-11-22 | 2020-04-14 | 北京北方华创微电子装备有限公司 | Electrode assembly and high-temperature vacuum furnace |
-
2011
- 2011-09-20 CN CN201120352699XU patent/CN202307823U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102368466A (en) * | 2011-09-20 | 2012-03-07 | 嘉兴科民电子设备技术有限公司 | Electrode of plasma etcher for carrying out dry etching on hard inorganic material substrate |
| CN102368466B (en) * | 2011-09-20 | 2013-11-27 | 天通吉成机器技术有限公司 | Electrode of plasma etcher for carrying out dry etching on hard inorganic material substrate |
| CN111006515A (en) * | 2019-11-22 | 2020-04-14 | 北京北方华创微电子装备有限公司 | Electrode assembly and high-temperature vacuum furnace |
| CN111006515B (en) * | 2019-11-22 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Electrode assembly and high-temperature vacuum furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: TIANTONG JICHENG MECHINE TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: JIAXING MICROELECTRONIC INSTRUMENT + EQUIPMENT ENGINEERING CENTER, CAS Effective date: 20120910 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 314006 JIAXING, ZHEJIANG PROVINCE TO: 314423 SUZHOU, ZHEJIANG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120910 Address after: 314423 No. 129, Shuang Lian Road, Haining Economic Development Zone, Zhejiang, China Patentee after: TDG Machinery Technology Co., Ltd. Address before: Jiaxing City, Zhejiang province 314006 Nanhu District Ling Gong Tang Road No. 3339 (Jiaxing city) Patentee before: Jiaxing Microelectronics Instrument and Equipment Engineering Center of Chinese Academy of Sciences |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20120704 Effective date of abandoning: 20131127 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20120704 Effective date of abandoning: 20131127 |
|
| RGAV | Abandon patent right to avoid regrant |