CN202259195U - Device for performing dry etching on hard inorganic material substrate - Google Patents
Device for performing dry etching on hard inorganic material substrate Download PDFInfo
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- CN202259195U CN202259195U CN2011203527333U CN201120352733U CN202259195U CN 202259195 U CN202259195 U CN 202259195U CN 2011203527333 U CN2011203527333 U CN 2011203527333U CN 201120352733 U CN201120352733 U CN 201120352733U CN 202259195 U CN202259195 U CN 202259195U
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Abstract
The utility model discloses a device for performing dry etching on a hard inorganic material substrate. The device comprises a main bracket and an auxiliary bracket, wherein an etching cavity is formed on the main bracket, and a molecular pump is arranged on the main bracket; the etching cavity is connected with the molecular pump; a pre-vacuum cavity is formed on the auxiliary bracket and connected with the etching cavity; a manipulator which conveys a disk into the etching cavity is arranged in the pre-vacuum cavity; the pre-vacuum cavity and the etching cavity are respectively connected with a mechanical pump for vacuumizing; a lower electrode which can drive the disk to move in the etching cavity is arranged below the etching cavity; the lower electrode is connected with a reactive ion etching (RIE) radio frequency power supply; the etching cavity and the pre-vacuum cavity are respectively connected with an air inlet pipeline; the air inlet pipeline is connected with a ventilation system which is used for controlling the air inlet pipeline to be ventilated; an air inlet of the etching cavity is connected with an inductively coupled plasma (ICP) radio frequency power supply; the manipulator and the lower electrode are connected with servo motors which drive the manipulator and the lower electrode to move; and the servo motors are connected with servo motor controllers which control the servo motors to move.
Description
Technical field
The utility model relates to the device of the hard inorganic material substrate of a kind of dry etching.
Background technology
Etching is a kind of considerable processing step in semiconductor fabrication process, microelectronics IC manufacturing process and the minute manufacturing technology, is a kind of main technique that graphical (pattern) that interrelate with photoetching handles.So-called etching, in fact narrow sense understanding is exactly photoetching corrosion, through photoetching photoresist is carried out photolithographic exposure earlier and handles, and falls required part of removing through alternate manner realization corrosion treatment then.Development along with little manufacturing process; On the broad sense, be etched into a kind of general designation of peeling off, remove material through solution, reactive ion or other mechanical system, become a kind of pervasive call of little processing and manufacturing.The simplest the most frequently used classification of etching is dry etching and wet etching.The dry etching kind is a lot, comprises photoablation, gaseous corrosion, plasma etching etc.Its advantage is: anisotropy is good, selects than high, and controllability, flexibility, good reproducibility are prone to realize automation, no chemical waste fluid, and processing procedure is not introduced pollution, and cleanliness factor is high.Shortcoming is: cost is high, complex equipments.The dry etching principal mode has pure chemistry process (like protected type, downstream formula, bucket formula), pure physical process (like ion beam milling), physical and chemical process, the ion etching RIE that responds commonly used, Assisted by Ion Beam free radical etching ICP etc.
Compare with other lithographic technique, the ICP lithographic technique is simple in structure, cost performance is high, the aspect ratio of device is bigger, install more miniaturization and simple to operate.The ICP source has the uniformity in diameter 20cm scope at least simultaneously, can independently control ion concentration and ion energy, has become comparatively desirable plasma source at present.The ICP reaction can obtain the high-density plasma greater than
, in order to realize the advanced course of processing.For example, lose silicon chip at normal temperatures deeply, can obtain high etch rate, vertical wide ratio of high etching and high selectivity keep sidewall steep simultaneously.This etching technics is widely used in various deep erosions, in the making like MEMS.Through the step of a depassivation of adding between passivation and etching, or, rationally regulate other etching parameters, not only can etch anisotropic end face through controlling the thickness of polymeric foil, and can be so that the end face inclination angle changes within the specific limits.Utilize ICP lithographic technique etch silicon sill and
compounds of group can obtain good etching effect equally.
The ICP lithographic technique is widely used in microelectronics, LED and photovoltaic field.The ICP lithographic technique also is used to prepare the substrate of HB-LED.
Sapphire Substrate is the base layer support of LED; On Sapphire Substrate through MOCVD grow successively
low temperature nucleating layer, N type doped layer, MQW (MQW) layer, P type doped layer; Make electrode again, just can process LED.On Sapphire Substrate, do figure through photoetching and etching and just can obtain the graphic sapphire substrate, promptly Patterned Sapphire Substrate is called for short PSS.The purpose of photoetching process is to need the sapphire of etching to appear with photoresist, with the sapphire shielding that does not need etching; The purpose of etching is that part of sapphire etching of being protected by photoresist not, to form figure.Compare with Sapphire Substrate, the graphic sapphire substrate has significant advantage.At first; After Sapphire Substrate carried out graphical treatment; When substrate surface growth
; The lattice mismatch of sapphire with
can reduce; Thereby reduce the helical dislocation that causes by lattice mismatch; Just can reduce the non-radiation recombination of light induced electron-hole effectively, improve the internal quantum efficiency of LED, strengthen the brightness of LED causing owing to helical dislocation; Secondly, because the light that produces from MQW only has the single direction of propagation, if the Sapphire Substrate of light process graphical treatment can increase the scattering of light, this just makes light that a plurality of directions of propagation are arranged.The light ray propagation that produces from MQW is during to air-sapphire interface; If incidence angle is greater than
(refractive index of
air;
is sapphire refractive index); LED is returned in light generation total reflection; If incidence angle is less than
; Light will reflect, and propagates in the air.And the design of LED is unidirectional bright dipping, does not hope that light penetrates from Sapphire Substrate one side.After being PSS, the figure on the Sapphire Substrate has increased the scattering of light, makes light that the more direction of propagation arranged; Just there is more rays generation total reflection to return LED; These light will so just improve the light eduction rate of LED from the exiting surface bright dipping, strengthen the brightness of LED.
It is significant to the brightness that improves LED to make PSS, and the sapphire sheet after the photoetching will could form PSS through over etching, and therefore, etching is the critical process step of making in the PSS technology.The purpose of etching is optionally to remove the part saphire substrate material according to the situation of photoetching.I.e. utilization is in plasmoid
and
carries out physical bombardment and chemical corrosion to Sapphire Substrate; The Sapphire Substrate that is not covered by photoresist is etched away, and that part of Sapphire Substrate that is covered by photoresist is not etched.Like this, after the over etching machine is handled, just on Sapphire Substrate, form figure, process Sapphire Substrate.
The etch rate and the etching homogeneity of sapphire etching machine are most important to the making of Sapphire Substrate.At first, etch rate is fast, and the etch period required for identical etching depth is just few, and production efficiency just can be improved.Secondly, etching homogeneity has conclusive effect for the yield that improves the PSS product.Like good uniformity in the chankings, on the basis that guarantees the luminous efficiency uniformity, on a slice sapphire sheet, just can be partitioned into more LED substrate so; If uniformity is better between the sapphire sheet sheet, 23 sapphire sheet can useless sheet can not occur as the substrate of high-brightness LED so.
There are problems in the existing sapphire etching machine that is used to make PSS.At first, etch rate does not reach requirement, and required time of the degree of depth that etching is certain on Sapphire Substrate is longer.Secondly, the uniformity in the sheet of etching between uniformity and sheet is relatively poor, and the yield of PSS is very low after the etching.At last, the throughput of etching is less, or even the monolithic etching.
Summary of the invention
The utility model will solve the existing sapphire etching machine that is used to make PSS and have the problem that etch rate is not high, etching effect is bad, throughput is little, provides that a kind of etch rate is high, the device of the hard inorganic material substrate of etching effect dry etching good, that throughput is big.
The technical scheme that the utility model adopts is:
The device of the hard inorganic material substrate of a kind of dry etching; It is characterized in that: comprise main support and assistant support, etch chamber and molecular pump are installed on the said main support, said etch chamber is connected with molecular pump; The forevacuum chamber is installed on the said assistant support; Said forevacuum chamber is connected with etch chamber, and said forevacuum is equipped with the manipulator that the sheet dish is transported to etch chamber in the chamber, and said forevacuum chamber all is connected with the mechanical pump that vacuumizes usefulness with etch chamber; The below of said etch chamber is equipped with and can drives the bottom electrode that the sheet dish moves in etch chamber, and said bottom electrode is connected with the RIE radio-frequency power supply; All be connected with admission line on said etch chamber and the forevacuum chamber, said admission line is connected with the aerating system of its ventilation of control, is connected with the ICP radio-frequency power supply on the air inlet of said etch chamber; Said manipulator is connected with the servomotor that drives its motion respectively with bottom electrode, and said servomotor all is connected with the servomotor controller of its motion of control.
Further, be equipped with gas extraction system on the said etch chamber, said gas extraction system comprises fore pump, and said fore pump is connected with molecular pump, is connected with leak detector on the said fore pump.
Further, the interface with molecular pump on the said etch chamber is provided with the thin film silicon of measuring etch chamber air pressure, and is provided with pressure regulating valve.
Further, on the said assistant support industrial computer main frame is installed.
Further, said RIE radio-frequency power supply is installed on the main support, and the height of its setting height(from bottom) and bottom electrode is suitable.
Further, said ICP radio-frequency power supply is installed on the main support, and the height of its setting height(from bottom) and etch chamber is suitable.
Further; Between said forevacuum chamber and the etch chamber, between said fore pump and the molecular pump, between said molecular pump and the etch chamber, between said mechanical pump and the etch chamber, between said mechanical pump and the forevacuum chamber valve is installed all, said valve all is connected with the pneumatic operated valve controller of its switch of control.
Further, between said forevacuum chamber and the mechanical pump, between said etch chamber and the mechanical pump, between said molecular pump and the etch chamber, between said molecular pump and the fore pump, all be connected between said fore pump and the leak detector through pipeline.
The course of work of the utility model:
1, the position of the position of manipulator and the bottom electrode under the etch chamber in the initialization forevacuum chamber;
2, open the lid in forevacuum chamber, the sheet dish that is placed with substrate is placed on the manipulator close cap;
3, open mechanical pump, earlier the forevacuum chamber vacuumized, reach certain vacuum degree after, mechanical pump vacuumizes etch chamber, reach certain vacuum degree after, close the valve between mechanical pump and the forevacuum chamber, no longer vacuumize, but mechanical pump is held open state;
4, open valve between forevacuum chamber and the etch chamber, manipulator is sent to etch chamber with the sheet dish;
5, bottom electrode rises, and the sheet pan arrest is risen, and reach a certain height;
6, manipulator is withdrawn from etch chamber, closes the valve between forevacuum chamber and the etch chamber;
7, start leak detector, fore pump and molecular pump successively;
8, whether air pressure meets the demands in the detection etch chamber, if do not meet the demands, then vacuumizes till atmospheric pressure value meets the demands in etch chamber with mechanical pump;
9, open valve between molecular pump and the etch chamber, molecular pump vacuumizes etch chamber;
10, admission line to etch chamber in the logical etching gas of aerating system through being connected with etch chamber;
11, open radio-frequency power supply, the etching gas build-up of luminance produces plasma in the etch chamber, simultaneously, making alive on the bottom electrode, plasma carries out etching through chemical reaction and two kinds of effects of physical bombardment to substrate;
12, after etching finished, ventilation stopped, and radio-frequency power supply is closed, the valve between closure molecule pump and the etch chamber;
13, logical nitrogen cleans etch chamber repeatedly;
14, respectively etch chamber and forevacuum chamber are vacuumized with mechanical pump;
15, open valve between forevacuum chamber and the etch chamber, manipulator gets into etch chamber the sheet dish is transported, and closes the valve between forevacuum chamber and the etch chamber again;
16, aerating system charges into nitrogen through the admission line with the forevacuum chamber to the forevacuum chamber, makes the air pressure in forevacuum chamber reach atmospheric pressure;
17, uncap takes out the sheet dish.
The beneficial effect of the utility model: etch rate is high, etching effect is good, throughput is big.
Description of drawings
Fig. 1 is the front schematic view of the utility model.
Fig. 2 is the schematic rear view of the utility model.
Embodiment
Come the utility model is further specified below in conjunction with specific embodiment, but the utility model is not confined to these embodiments.One skilled in the art would recognize that the utility model contained in claims scope all alternatives, improvement project and the equivalents that possibly comprise.
With reference to Fig. 1-2, the device of the hard inorganic material substrate of a kind of dry etching comprises main support 3 and assistant support 4; Etch chamber 1 and molecular pump 6 are installed on the said main support 3; Said etch chamber 1 is connected with molecular pump 6, on the said assistant support 4 forevacuum chamber 2 is installed, and said forevacuum chamber 2 is connected with etch chamber 1; In the said forevacuum chamber 2 manipulator that the sheet dish is transported to etch chamber 1 is installed, said forevacuum chamber 2 all is connected with the mechanical pump that vacuumizes usefulness 9 with etch chamber 1; The below of said etch chamber 1 is equipped with and can drives the bottom electrode 5 that the sheet dish moves in etch chamber 1, and said bottom electrode 5 is connected with the RIE radio-frequency power supply; All be connected with admission line on said etch chamber 1 and the forevacuum chamber 2, said admission line is connected with the aerating system 7 of its ventilation of control, is connected with the ICP radio-frequency power supply on the air inlet of said etch chamber 1; Said manipulator is connected with the servomotor that drives its motion respectively with bottom electrode 5, and said servomotor all is connected with the servomotor controller of its motion of control.
Be equipped with gas extraction system on the said etch chamber 1, said gas extraction system comprises fore pump 8, and said fore pump 8 is connected with molecular pump 6, is connected with leak detector 10 on the said fore pump 8.
Interface with molecular pump 6 on the said etch chamber 1 is provided with the thin film silicon of measuring etch chamber air pressure, and is provided with pressure regulating valve.
On the said assistant support 4 the industrial computer main frame is installed.
Said RIE radio-frequency power supply is installed on the main support 3, and the height of its setting height(from bottom) and bottom electrode 5 is suitable.
Said ICP radio-frequency power supply is installed on the main support 3, and the height of its setting height(from bottom) and etch chamber 1 is suitable.
Between said forevacuum chamber 2 and the etch chamber 1, between said fore pump 8 and the molecular pump 6, between said molecular pump 6 and the etch chamber 1, between said mechanical pump 9 and the etch chamber 1, between said mechanical pump 9 and the forevacuum chamber 2 valve is installed all, said valve all is connected with the pneumatic operated valve controller of its switch of control.
Between said forevacuum chamber 2 and the mechanical pump 9, between said etch chamber 1 and the mechanical pump 9, between said molecular pump 6 and the etch chamber 1, between said molecular pump 6 and the fore pump 8, all be connected between said fore pump 8 and the leak detector 10 through pipeline.
The course of work of the utility model:
1, the position of the position of manipulator and the bottom electrode 5 under the etch chamber 1 in the initialization forevacuum chamber 2;
2, open the lid in forevacuum chamber 2, the sheet dish that is placed with substrate is placed on the manipulator close cap;
3, open mechanical pump 9, earlier forevacuum chamber 2 vacuumized, reach certain vacuum degree after; 9 pairs of etch chamber 1 of mechanical pump vacuumize, reach certain vacuum degree after, close the valve between mechanical pump 9 and the forevacuum chamber 2; No longer vacuumize, but mechanical pump 9 is held open state;
4, open valve between forevacuum chamber 2 and the etch chamber 1, manipulator is sent to etch chamber 1 with the sheet dish;
5, bottom electrode 5 rises, and the sheet pan arrest is risen, and reach a certain height;
6, manipulator is withdrawn from etch chamber 1, closes the valve between forevacuum chamber 2 and the etch chamber 1;
7, start leak detector 10, fore pump 8 and molecular pump 6 successively;
8, whether air pressure meets the demands in the detection etch chamber 1, if do not meet the demands, then vacuumizes till atmospheric pressure value meets the demands in etch chamber 1 with mechanical pump 9;
9, open valve between molecular pump 6 and the etch chamber 1,6 pairs of etch chamber 1 of molecular pump vacuumize;
10, admission line to etch chamber 1 in the logical etching gas of aerating system 7 through being connected with etch chamber 1;
11, open radio-frequency power supply, the etching gas build-up of luminance produces plasma in the etch chamber, simultaneously, making alive on the bottom electrode 5, plasma carries out etching through chemical reaction and two kinds of effects of physical bombardment to substrate;
12, after etching finished, ventilation stopped, and radio-frequency power supply is closed, the valve between closure molecule pump 6 and the etch chamber 1;
13, logical nitrogen cleans etch chamber 1 repeatedly;
14, respectively etch chamber 1 and forevacuum chamber 2 are vacuumized with mechanical pump 9;
15, open valve between forevacuum chamber 2 and the etch chamber 1, manipulator gets into etch chamber 1 the sheet dish is transported, and closes the valve between forevacuum chamber 2 and the etch chamber 1 again;
16, aerating system 7 charges into nitrogen through the admission line with forevacuum chamber 2 to forevacuum chamber 2, makes the air pressure in forevacuum chamber 2 reach atmospheric pressure;
17, uncap takes out the sheet dish.
Claims (8)
1. the device of the hard inorganic material substrate of dry etching; It is characterized in that: comprise main support and assistant support, etch chamber and molecular pump are installed on the said main support, said etch chamber is connected with molecular pump; The forevacuum chamber is installed on the said assistant support; Said forevacuum chamber is connected with etch chamber, and said forevacuum is equipped with the manipulator that the sheet dish is transported to etch chamber in the chamber, and said forevacuum chamber all is connected with the mechanical pump that vacuumizes usefulness with etch chamber; The below of said etch chamber is equipped with and can drives the bottom electrode that the sheet dish moves in etch chamber, and said bottom electrode is connected with the RIE radio-frequency power supply; All be connected with admission line on said etch chamber and the forevacuum chamber, said admission line is connected with the aerating system of its ventilation of control, is connected with the ICP radio-frequency power supply on the air inlet of said etch chamber; Said manipulator is connected with the servomotor that drives its motion respectively with bottom electrode, and said servomotor all is connected with the servomotor controller of its motion of control.
2. the device of the hard inorganic material substrate of a kind of dry etching according to claim 1; It is characterized in that: be equipped with gas extraction system on the said etch chamber; Said gas extraction system comprises fore pump, and said fore pump is connected with molecular pump, is connected with leak detector on the said fore pump.
3. the device of the hard inorganic material substrate of a kind of dry etching according to claim 1 and 2 is characterized in that: the interface with molecular pump on the said etch chamber is provided with the thin film silicon of measuring etch chamber air pressure, and is provided with pressure regulating valve.
4. the device of the hard inorganic material substrate of a kind of dry etching according to claim 3 is characterized in that: the industrial computer main frame is installed on the said assistant support.
5. the device of the hard inorganic material substrate of a kind of dry etching according to claim 4 is characterized in that: said RIE radio-frequency power supply is installed on the main support, and the height of its setting height(from bottom) and bottom electrode is suitable.
6. the device of the hard inorganic material substrate of a kind of dry etching according to claim 5 is characterized in that: said ICP radio-frequency power supply is installed on the main support, and the height of its setting height(from bottom) and etch chamber is suitable.
7. the device of the hard inorganic material substrate of a kind of dry etching according to claim 6; It is characterized in that: between said forevacuum chamber and the etch chamber, between said fore pump and the molecular pump, between said molecular pump and the etch chamber, between said mechanical pump and the etch chamber, between said mechanical pump and the forevacuum chamber valve is installed all, said valve all is connected with the pneumatic operated valve controller of its switch of control.
8. the device of the hard inorganic material substrate of a kind of dry etching according to claim 7 is characterized in that: between said forevacuum chamber and the mechanical pump, between said etch chamber and the mechanical pump, between said molecular pump and the etch chamber, between said molecular pump and the fore pump, all be connected through pipeline between said fore pump and the leak detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203527333U CN202259195U (en) | 2011-09-20 | 2011-09-20 | Device for performing dry etching on hard inorganic material substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203527333U CN202259195U (en) | 2011-09-20 | 2011-09-20 | Device for performing dry etching on hard inorganic material substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202259195U true CN202259195U (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203527333U Withdrawn - After Issue CN202259195U (en) | 2011-09-20 | 2011-09-20 | Device for performing dry etching on hard inorganic material substrate |
Country Status (1)
| Country | Link |
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| CN (1) | CN202259195U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102368475A (en) * | 2011-09-20 | 2012-03-07 | 嘉兴科民电子设备技术有限公司 | Device for etching rigid inorganic material substrate by dry method |
-
2011
- 2011-09-20 CN CN2011203527333U patent/CN202259195U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102368475A (en) * | 2011-09-20 | 2012-03-07 | 嘉兴科民电子设备技术有限公司 | Device for etching rigid inorganic material substrate by dry method |
| CN102368475B (en) * | 2011-09-20 | 2015-12-02 | 天通吉成机器技术有限公司 | A kind of device of etching rigid inorganic material substrate by dry method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: TIANTONG JICHENG MECHINE TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: CAS JIAXING MICROELECTRONIC INSTRUMENT AND EQUIPMENT ENGINEERING CENTER Effective date: 20121010 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 314006 JIAXING, ZHEJIANG PROVINCE TO: 314423 JIAXING, ZHEJIANG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20121010 Address after: 314423 No. 129, Shuang Lian Road, Haining Economic Development Zone, Zhejiang, China Patentee after: TDG Machinery Technology Co., Ltd. Address before: Jiaxing City, Zhejiang province 314006 Nanhu District Ling Gong Tang Road No. 3339 (Jiaxing city) Patentee before: Jiaxing Microelectronics Instrument and Equipment Engineering Center of Chinese Academy of Sciences |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20120530 Effective date of abandoning: 20151202 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20120530 Effective date of abandoning: 20151202 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |