CN102368473A - Forevacuum cavity of ICP (Inductively Coupled Plasma) etcher for carrying out dry etching on hard inorganic material substrate - Google Patents
Forevacuum cavity of ICP (Inductively Coupled Plasma) etcher for carrying out dry etching on hard inorganic material substrate Download PDFInfo
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- CN102368473A CN102368473A CN2011102795809A CN201110279580A CN102368473A CN 102368473 A CN102368473 A CN 102368473A CN 2011102795809 A CN2011102795809 A CN 2011102795809A CN 201110279580 A CN201110279580 A CN 201110279580A CN 102368473 A CN102368473 A CN 102368473A
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Abstract
The invention relates to a forevacuum cavity of an ICP (Inductively Coupled Plasma) etcher for carrying out dry etching on a hard inorganic material substrate, which comprises a cavity body. The cavity body is provided with a cavity cover. The cavity cover is provided with a chip dish taking and placing opening. A cover is arranged at the position of the chip dish taking and placing opening. One lateral surface of the cavity body is provided with a chip dish inlet and outlet port. A valve is arranged at the position of the chip dish inlet and outlet port. The cavity body is provided with a mechanical pump joint and a gas inlet pipeline joint, wherein the mechanical pump joint is used for being connected with a mechanical pump; and the gas inlet pipeline joint is used for being connected with a gas inlet pipeline. The inner bottom surface of the cavity body is provided with a guide rail slot. A guide rail device moving along the guide rail slot is arranged in the guide rail slot. The guide rail device is connected with a manipulator for conveying a chip dish. The guide rail device is connected with a screw for driving the guide rail device to move. The screw is rotatablely arranged in the cavity body. One end of the screw protrudes out of the cavity body to be connected with a servo motor. The servo motor is fixedly arranged at the bottom of the cavity body. The forevacuum cavity of the ICP etcher for carrying out dry etching on the hard inorganic material substrate has the beneficial effects that the transport mechanism of the manipulator is simpler and more reliable and the cost of the manipulator is low.
Description
Technical field
The present invention relates to the forevacuum chamber of the hard inorganic material substrate of a kind of dry etching ICP etching machine.
Background technology
Etching is a kind of considerable processing step in semiconductor fabrication process, microelectronics IC manufacturing process and the minute manufacturing technology, is a kind of main technique that graphical (pattern) that interrelate with photoetching handles.So-called etching, in fact narrow sense understanding is exactly photoetching corrosion, through photoetching photoresist is carried out photolithographic exposure earlier and handles, and falls required part of removing through alternate manner realization corrosion treatment then.Development along with little manufacturing process; On the broad sense, be etched into a kind of general designation of peeling off, remove material through solution, reactive ion or other mechanical system, become a kind of pervasive call of little processing and manufacturing.The simplest the most frequently used classification of etching is dry etching and wet etching.The dry etching kind is a lot, comprises photoablation, gaseous corrosion, plasma etching etc.Its advantage is: anisotropy is good, selects than high, and controllability, flexibility, good reproducibility are prone to realize automation, no chemical waste fluid, and processing procedure is not introduced pollution, and cleanliness factor is high.Shortcoming is: cost is high, complex equipments.The dry etching principal mode has pure chemistry process (like protected type, downstream formula, bucket formula), pure physical process (like ion beam milling), physical and chemical process, the ion etching RIE that responds commonly used, Assisted by Ion Beam free radical etching ICP etc.
Compare with other lithographic technique, the ICP lithographic technique is simple in structure, cost performance is high, the aspect ratio of device is bigger, install more miniaturization and simple to operate.The ICP source has the uniformity in diameter 20cm scope at least simultaneously, can independently control ion concentration and ion energy, has become comparatively desirable plasma source at present.The ICP reaction can obtain the high-density plasma greater than
, in order to realize the advanced course of processing.For example, lose silicon chip at normal temperatures deeply, can obtain high etch rate, vertical wide ratio of high etching and high selectivity keep sidewall steep simultaneously.This etching technics is widely used in various deep erosions, in the making like MEMS.Through the step of a depassivation of adding between passivation and etching, or, rationally regulate other etching parameters, not only can etch anisotropic end face through controlling the thickness of polymeric foil, and can be so that the end face inclination angle changes within the specific limits.Utilize ICP lithographic technique etch silicon sill and
compounds of group can obtain good etching effect equally.
The ICP lithographic technique is widely used in microelectronics, LED and photovoltaic field.The ICP lithographic technique also is used to prepare the substrate of HB-LED.
Sapphire Substrate is the base layer support of LED; On Sapphire Substrate through MOCVD grow successively
low temperature nucleating layer, N type doped layer, MQW (MQW) layer, P type doped layer; Make electrode again, just can process LED.On Sapphire Substrate, do figure through photoetching and etching and just can obtain the graphic sapphire substrate, promptly Patterned Sapphire Substrate is called for short PSS.The purpose of photoetching process is to need the sapphire of etching to appear with photoresist, with the sapphire shielding that does not need etching; The purpose of etching is that part of sapphire etching of being protected by photoresist not, to form figure.Compare with Sapphire Substrate, the graphic sapphire substrate has significant advantage.At first; After Sapphire Substrate carried out graphical treatment; When substrate surface growth
; The lattice mismatch of sapphire with
can reduce; Thereby reduce the helical dislocation that causes by lattice mismatch; Just can reduce the non-radiation recombination of light induced electron-hole effectively, improve the internal quantum efficiency of LED, strengthen the brightness of LED causing owing to helical dislocation; Secondly, because the light that produces from MQW only has the single direction of propagation, if the Sapphire Substrate of light process graphical treatment can increase the scattering of light, this just makes light that a plurality of directions of propagation are arranged.The light ray propagation that produces from MQW is during to air-sapphire interface; If incidence angle is greater than
(refractive index of
air;
is sapphire refractive index); LED is returned in light generation total reflection; If incidence angle is less than
; Light will reflect, and propagates in the air.And the design of LED is unidirectional bright dipping, does not hope that light penetrates from Sapphire Substrate one side.After being PSS, the figure on the Sapphire Substrate has increased the scattering of light, makes light that the more direction of propagation arranged; Just there is more rays generation total reflection to return LED; These light will so just improve the light eduction rate of LED from the exiting surface bright dipping, strengthen the brightness of LED.
It is significant to the brightness that improves LED to make PSS, and the sapphire sheet after the photoetching will could form PSS through over etching, and therefore, etching is the critical process step of making in the PSS technology.The purpose of etching is optionally to remove the part saphire substrate material according to the situation of photoetching.I.e. utilization is in plasmoid
and
carries out physical bombardment and chemical corrosion to Sapphire Substrate; The Sapphire Substrate that is not covered by photoresist is etched away, and that part of Sapphire Substrate that is covered by photoresist is not etched.Like this, after the over etching machine is handled, just on Sapphire Substrate, form figure, process Sapphire Substrate.
The etch rate and the etching homogeneity of sapphire etching machine are most important to the making of Sapphire Substrate.At first, etch rate is fast, and the etch period required for identical etching depth is just few, and production efficiency just can be improved.Secondly, etching homogeneity has conclusive effect for the yield that improves the PSS product.Like good uniformity in the chankings, on the basis that guarantees the luminous efficiency uniformity, on a slice sapphire sheet, just can be partitioned into more LED substrate so; If uniformity is better between the sapphire sheet sheet, 23 sapphire sheet can useless sheet can not occur as the substrate of high-brightness LED so.
The forevacuum chamber is the important component part of etching system, and it has three important function in the ICP etching apparatus, the one, and for the motion of manipulator provides track, manipulator is moved on particular trajectory; The 2nd, as man-machine communication's window, promptly operating personnel's opening part sheet from the forevacuum chamber before etching process begins is put into the sheet dish, after the etching process end, from the forevacuum chamber, takes out the sheet dish.There are problems in the existing forevacuum chamber that is used to make the sapphire etching machine of PSS.At first the throughput of etching is less, or even the monolithic etching, can not realize the batch etching of substrate slice; Secondly, the locomotory mechanism of manipulator in the forevacuum chamber is too complicated.
Summary of the invention
The present invention will solve the existing forevacuum chamber that is used to make the sapphire etching machine of PSS and have the problem that the mechanical arm transport mechanism is complicated, cost is high, and the forevacuum chamber of the hard inorganic material substrate of a kind of mechanical arm transport mechanism dry etching simple, that cost is low ICP etching machine is provided.
The technical scheme that the present invention adopts is:
The forevacuum chamber of the hard inorganic material substrate of a kind of dry etching ICP etching machine comprises cavity, and the chamber lid is installed on the said cavity; Said chamber covers and has the sheet dish and pick and place mouth; Said dish picks and places a mouthful place and is provided with lid, has the sheet dish on the side of said cavity and imports and exports, and said dish import and export is provided with valve; Said cavity is provided with the mechanical pump interface that is used for being connected with mechanical pump, be used for the admission line interface that is connected with admission line; It is characterized in that: have guide-track groove on the said cavity inner bottom surface, the guide rail device that moves along it is installed in said guide-track groove, be connected with the manipulator of conveying sheet dish on the said guide rail device; Said guide rail device is connected with the screw mandrel that drives its motion, and said screw mandrel is rotating to be installed in the cavity, and the one of which end passes cavity and is connected with servomotor, and said servomotor is fixed on the bottom of cavity.
Further, the width of said guide rail device equates that with guide-track groove the length of said guide rail device is less than the length of guide-track groove.
Further, said chamber lid passes through screw with cavity, and through the sealing ring sealing.
Further, be provided with seal groove between said chamber lid and the lid.
Further, be to adopt magnet fluid sealing between said screw mandrel and the cavity.
Further, said screw mandrel is fixedly mounted on the screw mandrel fixture in the cavity.
Further, said cavity all is threaded with servomotor, mechanical pump, screw mandrel fixture, admission line, valve.
Use of the present invention:
1, connection chamber lid and cavity, lid and chamber lid, mechanical pump and cavity, gas pipeline and cavity, valve and cavity, servomotor and cavity, screw mandrel and cavity, guide rail device and guide-track groove;
2, mechanical pump begins to vacuumize to cavity;
3, the valve opening of sheet dish import and export;
4, screw mandrel rotation drive guide rail device is moving along guide-track groove, and the sheet dish is sent to etch chamber;
5, after etching process finished, screw mandrel rotated drive guide rail device and is moving along guide-track groove, and the sheet dish is taken out from etch chamber;
6, the valve closing of sheet dish import and export;
7, the forevacuum chamber is vacuumized;
8, the interface valve opening of cavity and admission line to the inflation of forevacuum chamber, makes that pressure and the atmospheric pressure in the forevacuum chamber is suitable;
9, uncap takes out the sheet dish.
Beneficial effect of the present invention: the transport mechanism of manipulator is more simple and reliable, cost is low.
Description of drawings
Fig. 1 is a perspective view one of the present invention.
Fig. 2 is a perspective view two of the present invention.
Fig. 3 is the structural representation after the present invention removes lid.
Embodiment
Come the present invention is further specified below in conjunction with specific embodiment, but do not limit the invention to these embodiments.One skilled in the art would recognize that the present invention contained in claims scope all alternatives, improvement project and the equivalents that possibly comprise.
With reference to Fig. 1-3, the forevacuum chamber of the hard inorganic material substrate of a kind of dry etching ICP etching machine comprises cavity 1; Chamber lid 2 is installed on the said cavity 1, has the sheet dish on the said chamber lid 2 and pick and place mouth 3, said dish picks and places mouthful 3 places and is provided with lid; Have the sheet dish on one side of said cavity 1 and import and export 4; Said dish imported and exported 4 places and is provided with valve, and said cavity 1 is provided with the mechanical pump interface 5 that is used for being connected with mechanical pump, be used for the admission line interface 6 that is connected with admission line, has guide-track groove 7 on said cavity 1 inner bottom surface; The guide rail device that moves along it is installed in said guide-track groove 7, is connected with the manipulator of conveying sheet dish on the said guide rail device; Said guide rail device is connected with the screw mandrel that drives its motion, and said screw mandrel is rotating to be installed in the cavity 1, and the one of which end passes cavity 1 and is connected with servomotor, and said servomotor is fixed on the bottom of cavity 1.
The width of said guide rail device equates that with guide-track groove 7 length of said guide rail device is less than the length of guide-track groove 7.
Said chamber lid 2 passes through screw with cavity 1, and through the sealing ring sealing.
Be provided with seal groove 8 between said chamber lid 2 and the lid.
Be to adopt magnet fluid sealing between said screw mandrel and the cavity 1.
Said screw mandrel is fixedly mounted on the screw mandrel fixture in the cavity 1.
Said cavity 1 all is threaded with servomotor, mechanical pump, screw mandrel fixture, admission line, valve.
Use of the present invention:
1, connection chamber lid 2 and cavity 1, lid and chamber lid 2, mechanical pump and cavity 1, gas pipeline and cavity 1, valve and cavity 1, servomotor and cavity 1, screw mandrel and cavity 1, guide rail device and guide-track groove 7;
2, mechanical pump begins to vacuumize to cavity 1;
3, the sheet dish is imported and exported the valve opening at 4 places;
4, screw mandrel rotation drive guide rail device is moving along guide-track groove 7, and the sheet dish is sent to etch chamber;
5, after etching process finished, screw mandrel rotated drive guide rail device and is moving along guide-track groove 7, and the sheet dish is taken out from etch chamber;
6, the sheet dish is imported and exported the valve closing at 4 places;
7, the forevacuum chamber is vacuumized;
8, the interface valve opening of cavity 1 and admission line to the inflation of forevacuum chamber, makes that pressure and the atmospheric pressure in the forevacuum chamber is suitable;
9, uncap takes out the sheet dish.
Claims (7)
1. the forevacuum chamber of the hard inorganic material substrate of a dry etching ICP etching machine comprises cavity, and the chamber lid is installed on the said cavity; Said chamber covers and has the sheet dish and pick and place mouth; Said dish picks and places a mouthful place and is provided with lid, has the sheet dish on the side of said cavity and imports and exports, and said dish import and export is provided with valve; Said cavity is provided with the mechanical pump interface that is used for being connected with mechanical pump, be used for the admission line interface that is connected with admission line; It is characterized in that: have guide-track groove on the said cavity inner bottom surface, the guide rail device that moves along it is installed in said guide-track groove, be connected with the manipulator of conveying sheet dish on the said guide rail device; Said guide rail device is connected with the screw mandrel that drives its motion, and said screw mandrel is rotating to be installed in the cavity, and the one of which end passes cavity and is connected with servomotor, and said servomotor is fixed on the bottom of cavity.
2. the forevacuum chamber of the hard inorganic material substrate of a kind of dry etching according to claim 1 ICP etching machine, it is characterized in that: the width of said guide rail device equates that with guide-track groove the length of said guide rail device is less than the length of guide-track groove.
3. the forevacuum chamber of the hard inorganic material substrate of a kind of dry etching according to claim 1 and 2 ICP etching machine is characterized in that: said chamber lid passes through screw with cavity, and through the sealing ring sealing.
4. the forevacuum chamber of the hard inorganic material substrate of a kind of dry etching according to claim 3 ICP etching machine is characterized in that: be provided with seal groove between said chamber lid and the lid.
5. the forevacuum chamber of the hard inorganic material substrate of a kind of dry etching according to claim 4 ICP etching machine is characterized in that: be to adopt magnet fluid sealing between said screw mandrel and the cavity.
6. the forevacuum chamber of the hard inorganic material substrate of a kind of dry etching according to claim 5 ICP etching machine is characterized in that: said screw mandrel is fixedly mounted on the screw mandrel fixture in the cavity.
7. the forevacuum chamber of the hard inorganic material substrate of a kind of dry etching according to claim 6 ICP etching machine, it is characterized in that: said cavity all is threaded with servomotor, mechanical pump, screw mandrel fixture, admission line, valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102795809A CN102368473A (en) | 2011-09-20 | 2011-09-20 | Forevacuum cavity of ICP (Inductively Coupled Plasma) etcher for carrying out dry etching on hard inorganic material substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102795809A CN102368473A (en) | 2011-09-20 | 2011-09-20 | Forevacuum cavity of ICP (Inductively Coupled Plasma) etcher for carrying out dry etching on hard inorganic material substrate |
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|---|---|
| CN102368473A true CN102368473A (en) | 2012-03-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11307608A (en) * | 1998-04-16 | 1999-11-05 | Nissin Electric Co Ltd | Processed piece carrier system |
| US20040043513A1 (en) * | 2000-11-07 | 2004-03-04 | Shigeru Ishizawa | Method of transferring processed body and processing system for processed body |
| KR20100003546A (en) * | 2008-07-01 | 2010-01-11 | 삼성전기주식회사 | Plasma etching apparatus |
| WO2010008116A2 (en) * | 2008-07-14 | 2010-01-21 | Korea Electro Technology Research Institute | Method and chamber for inductively coupled plasma processing for cylinderical material with three-dimensional surface |
| CN102169810A (en) * | 2010-12-27 | 2011-08-31 | 清华大学 | Laser processing apparatus using vacuum cavity and processing method thereof |
| CN202307811U (en) * | 2011-09-20 | 2012-07-04 | 中国科学院嘉兴微电子仪器与设备工程中心 | Pre-vacuum chamber for ICP (Inductively Coupled Plasma) etching machine for etching hard inorganic material by adopting dry method |
-
2011
- 2011-09-20 CN CN2011102795809A patent/CN102368473A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11307608A (en) * | 1998-04-16 | 1999-11-05 | Nissin Electric Co Ltd | Processed piece carrier system |
| US20040043513A1 (en) * | 2000-11-07 | 2004-03-04 | Shigeru Ishizawa | Method of transferring processed body and processing system for processed body |
| KR20100003546A (en) * | 2008-07-01 | 2010-01-11 | 삼성전기주식회사 | Plasma etching apparatus |
| WO2010008116A2 (en) * | 2008-07-14 | 2010-01-21 | Korea Electro Technology Research Institute | Method and chamber for inductively coupled plasma processing for cylinderical material with three-dimensional surface |
| CN102169810A (en) * | 2010-12-27 | 2011-08-31 | 清华大学 | Laser processing apparatus using vacuum cavity and processing method thereof |
| CN202307811U (en) * | 2011-09-20 | 2012-07-04 | 中国科学院嘉兴微电子仪器与设备工程中心 | Pre-vacuum chamber for ICP (Inductively Coupled Plasma) etching machine for etching hard inorganic material by adopting dry method |
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Application publication date: 20120307 |