CN202307824U - Chip transfer system of plasma etching machine for etching inorganic material substrate by adopting dry method - Google Patents
Chip transfer system of plasma etching machine for etching inorganic material substrate by adopting dry method Download PDFInfo
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- CN202307824U CN202307824U CN2011203527314U CN201120352731U CN202307824U CN 202307824 U CN202307824 U CN 202307824U CN 2011203527314 U CN2011203527314 U CN 2011203527314U CN 201120352731 U CN201120352731 U CN 201120352731U CN 202307824 U CN202307824 U CN 202307824U
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- inorganic material
- servomotor
- gear
- etching
- base plate
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Abstract
The utility model discloses a chip transfer system of a plasma etching machine for etching an inorganic material substrate by adopting a dry method. The chip transfer system is arranged in a forevacuum cavity and comprises a mechanical arm for transferring a chip, wherein the mechanical arm is fixedly connected to a screw nut driving the mechanical arm to move, the screw nut is arranged on a screw, the screw is connected with a servo motor through a gear pair, the gear pair comprises a main gear connected with a rotor of the servo motor and a pinion connected with a rotor of a screw, and the main gear is meshed and connected with the pinion. The chip transfer system has the advantages of high chip transfer efficiency, simple and reasonable structure and good reliability.
Description
Technical field
The utility model relates to a kind of biography chip system of dry etching inorganic material base plate plasma body etching machine.
Background technology
Etching is a kind of considerable processing step in semiconductor fabrication process, microelectronics IC manufacturing process and the minute manufacturing technology, is a kind of main technique that graphical (pattern) that interrelate with photoetching handles.So-called etching, in fact narrow sense understanding is exactly photoetching corrosion, through photoetching photoresist is carried out photolithographic exposure earlier and handles, and falls required part of removing through alternate manner realization corrosion treatment then.Development along with little manufacturing process; On the broad sense, be etched into a kind of general designation of peeling off, remove material through solution, reactive ion or other mechanical system, become a kind of pervasive call of little processing and manufacturing.The simplest the most frequently used classification of etching is dry etching and wet etching.The dry etching kind is a lot, comprises photoablation, gaseous corrosion, plasma etching etc.Its advantage is: anisotropy is good, selects than high, and controllability, flexibility, good reproducibility are prone to realize automation, no chemical waste fluid, and processing procedure is not introduced pollution, and cleanliness factor is high.Shortcoming is: cost is high, complex equipments.The dry etching principal mode has pure chemistry process (like protected type, downstream formula, bucket formula), pure physical process (like ion beam milling), physical and chemical process, the ion etching RIE that responds commonly used, Assisted by Ion Beam free radical etching ICP etc.
Compare with other lithographic technique, the ICP lithographic technique is simple in structure, cost performance is high, the aspect ratio of device is bigger, install more miniaturization and simple to operate.The ICP source has the uniformity in diameter 20cm scope at least simultaneously, can independently control ion concentration and ion energy, has become comparatively desirable plasma source at present.The ICP reaction can obtain the high-density plasma greater than
, in order to realize the advanced course of processing.For example, lose silicon chip at normal temperatures deeply, can obtain high etch rate, vertical wide ratio of high etching and high selectivity keep sidewall steep simultaneously.This etching technics is widely used in various deep erosions, in the making like MEMS.Through the step of a depassivation of adding between passivation and etching, or, rationally regulate other etching parameters, not only can etch anisotropic end face through controlling the thickness of polymeric foil, and can be so that the end face inclination angle changes within the specific limits.Utilize ICP lithographic technique etch silicon sill and
compounds of group can obtain good etching effect equally.
The ICP lithographic technique is widely used in microelectronics, LED and photovoltaic field.The ICP lithographic technique also is used to prepare the substrate of HB-LED.
Sapphire Substrate is the base layer support of LED; On Sapphire Substrate through MOCVD grow successively
low temperature nucleating layer, N type doped layer, MQW (MQW) layer, P type doped layer; Make electrode again, just can process LED.On Sapphire Substrate, do figure through photoetching and etching and just can obtain the graphic sapphire substrate, promptly Patterned Sapphire Substrate is called for short PSS.The purpose of photoetching process is to need the sapphire of etching to appear with photoresist, with the sapphire shielding that does not need etching; The purpose of etching is that part of sapphire etching of being protected by photoresist not, to form figure.Compare with Sapphire Substrate, the graphic sapphire substrate has significant advantage.At first; After Sapphire Substrate carried out graphical treatment; When substrate surface growth
; The lattice mismatch of sapphire with
can reduce; Thereby reduce the helical dislocation that causes by lattice mismatch; Just can reduce the non-radiation recombination of light induced electron-hole effectively, improve the internal quantum efficiency of LED, strengthen the brightness of LED causing owing to helical dislocation; Secondly, because the light that produces from MQW only has the single direction of propagation, if the Sapphire Substrate of light process graphical treatment can increase the scattering of light, this just makes light that a plurality of directions of propagation are arranged.The light ray propagation that produces from MQW is during to air-sapphire interface; If incidence angle is greater than
(refractive index of
air;
is sapphire refractive index); LED is returned in light generation total reflection; If incidence angle is less than
; Light will reflect, and propagates in the air.And the design of LED is unidirectional bright dipping, does not hope that light penetrates from Sapphire Substrate one side.After being PSS, the figure on the Sapphire Substrate has increased the scattering of light, makes light that the more direction of propagation arranged; Just there is more rays generation total reflection to return LED; These light will so just improve the light eduction rate of LED from the exiting surface bright dipping, strengthen the brightness of LED.
It is significant to the brightness that improves LED to make PSS, and the sapphire sheet after the photoetching will could form PSS through over etching, and therefore, etching is the critical process step of making in the PSS technology.The purpose of etching is optionally to remove the part saphire substrate material according to the situation of photoetching.I.e. utilization is in plasmoid
and
carries out physical bombardment and chemical corrosion to Sapphire Substrate; The Sapphire Substrate that is not covered by photoresist is etched away, and that part of Sapphire Substrate that is covered by photoresist is not etched.Like this, after the over etching machine is handled, just on Sapphire Substrate, form figure, process Sapphire Substrate.
The etch rate and the etching homogeneity of sapphire etching machine are most important to the making of Sapphire Substrate.At first, etch rate is fast, and the etch period required for identical etching depth is just few, and production efficiency just can be improved.Secondly, etching homogeneity has conclusive effect for the yield that improves the PSS product.Like good uniformity in the chankings, on the basis that guarantees the luminous efficiency uniformity, on a slice sapphire sheet, just can be partitioned into more LED substrate so; If uniformity is better between the sapphire sheet sheet, 23 sapphire sheet can useless sheet can not occur as the substrate of high-brightness LED so.
For batch type ICP etching machine, need multi-disc inorganic material substrate be placed on the sheet dish, with the sheet dish substrate is sent to etch chamber a collection ofly then, after finishing, etching again the sheet dish is taken out from etch chamber.The sheet dish that adopts the biography chip system will deliver substrate carries out position transfer between etch chamber and forevacuum chamber.There are a lot of shortcomings in existing biography chip system, at first can only realize the monolithic transhipment, and it is lower that next passes sheet efficient, and reliability is relatively poor.
Summary of the invention
The biography chip system existence biography sheet efficient that the utility model will solve existing ICP etching machine is low, the problem of poor reliability, and a kind of biography chip system that passes the dry etching inorganic material base plate plasma body etching machine of sheet efficient height, good reliability is provided.
The technical scheme that the utility model adopts is:
A kind of biography chip system of dry etching inorganic material base plate plasma body etching machine; It is installed in the forevacuum chamber, comprises the manipulator that transports the sheet dish, it is characterized in that: said manipulator is fixedly connected on the feed screw nut who drives its motion; Said feed screw nut is installed on the screw mandrel; Said screw mandrel is connected with servomotor through gear pair, said gear pair comprise the master gear that is connected with servo motor rotor, with the pinion that the screw mandrel rotor is connected, said master gear and pinion are connected with a joggle.
Further; Said master gear and pinion are all through gear horizontal direction navigation system horizontal location; Said gear horizontal direction navigation system comprises predetermination bit slice and back spacer, between said predetermination bit slice and the back spacer gear is installed, and said predetermination bit slice is connected with rotor.
Further, the diameter of said master gear is less than the diameter of pinion.
Further, said servomotor is fixedly connected on the forevacuum chamber through the servomotor locator.
Further, said screw mandrel is fixedly connected on the forevacuum chamber through the screw mandrel locator.
Further, said feed screw nut cooperates with guide-track groove in the forevacuum chamber and moves.
Further, said servomotor all is connected through screw with the feed screw nut with back spacer, said manipulator with rotor, said predetermination bit slice with forevacuum chamber, said predetermination bit slice with forevacuum chamber, said screw mandrel locator with servomotor locator, said servomotor potentiometer.
The use of the utility model:
1, the sheet dish is put on the manipulator;
2, automatic control system is sent signal to servomotor, and servomotor begins to rotate;
3, the rotation of servomotor drives the master gear rotation;
4, the rotation of master gear drives the pinion rotation;
5, the rotating band movable wire bar of pinion rotates;
6, the feed screw nut on the rotating band movable wire bar of screw mandrel moves to etch chamber;
7, the feed screw nut's on the screw mandrel motion drive manipulator and sheet dish move to etch chamber;
8, the rotation direction of change servomotor just can change the moving direction of manipulator and sheet dish.
The beneficial effect of the utility model: pass sheet efficient height, good reliability, and simple and reasonable.
Description of drawings
Fig. 1 is the perspective view of the utility model.
Fig. 2 is the structural representation of the gear horizontal direction navigation system of the utility model.
Fig. 3 is the user mode figure of the gear horizontal direction navigation system Positioning Gear of the utility model.
Fig. 4 is that the utility model is installed in the structural representation in the forevacuum chamber.
Embodiment
Come the utility model is further specified below in conjunction with specific embodiment, but the utility model is not confined to these embodiments.One skilled in the art would recognize that the utility model contained in claims scope all alternatives, improvement project and the equivalents that possibly comprise.
With reference to Fig. 1-4; A kind of biography chip system of dry etching inorganic material base plate plasma body etching machine; It is installed in the forevacuum chamber 12, comprises the manipulator 3 that transports the sheet dish, and said manipulator 3 is fixedly connected on the feed screw nut 8 who drives its motion; Said feed screw nut 8 is installed on the screw mandrel 11; Said screw mandrel 11 is connected with servomotor 1 through gear pair, and said gear pair comprises the master gear 6 that is connected with servo motor rotor 5, the pinion 7 that is connected with screw mandrel rotor 4, and said master gear 6 is connected with a joggle with pinion 7.
Said master gear 6 and pinion 7 are all through gear horizontal direction navigation system horizontal location; Said gear horizontal direction navigation system comprises predetermination bit slice 9 and back spacer 10; Between said predetermination bit slice 9 and the back spacer 10 gear is installed, said predetermination bit slice 9 is connected with rotor.
The diameter of said master gear 6 is less than the diameter of pinion 7.
Said servomotor 1 is fixedly connected on the forevacuum chamber 12 through servomotor locator 2.
Said screw mandrel 11 is fixedly connected on the forevacuum chamber 12 through screw mandrel locator 14.
Said feed screw nut 8 cooperates mobile with forevacuum chamber 12 interior guide-track grooves 13.
Said servomotor 1 all is connected through screw with feed screw nut 8 with back spacer 10, said manipulator 3 with rotor, said predetermination bit slice 9 with forevacuum chamber 12, said predetermination bit slice 9 with forevacuum chamber 12, said screw mandrel locator 14 with servomotor locator 2, said servomotor potentiometer 2.
The use of the utility model:
1, the sheet dish is put on the manipulator 13;
2, automatic control system sends signal for servomotor 1, and servomotor 1 begins to rotate;
3, the rotation of servomotor 1 drives master gear 6 rotations;
4, the rotation of master gear 6 drives pinion 7 rotations;
5, the rotating band movable wire bar 11 of pinion 7 rotates;
6, the feed screw nut 8 on the rotating band movable wire bar 11 of screw mandrel 11 moves to etch chamber;
7, the feed screw nut's 8 on the screw mandrel 11 motion drive manipulator 13 and sheet dish move to etch chamber;
8, the rotation direction of change servomotor 1 just can change the moving direction of manipulator 13 and sheet dish.
Claims (7)
1. the biography chip system of a dry etching inorganic material base plate plasma body etching machine; It is installed in the forevacuum chamber, comprises the manipulator that transports the sheet dish, it is characterized in that: said manipulator is fixedly connected on the feed screw nut who drives its motion; Said feed screw nut is installed on the screw mandrel; Said screw mandrel is connected with servomotor through gear pair, said gear pair comprise the master gear that is connected with servo motor rotor, with the pinion that the screw mandrel rotor is connected, said master gear and pinion are connected with a joggle.
2. the biography chip system of a kind of dry etching inorganic material base plate plasma body etching machine according to claim 1; It is characterized in that: said master gear and pinion are all through gear horizontal direction navigation system horizontal location; Said gear horizontal direction navigation system comprises predetermination bit slice and back spacer; Between said predetermination bit slice and the back spacer gear is installed, said predetermination bit slice is connected with rotor.
3. the biography chip system of a kind of dry etching inorganic material base plate plasma body etching machine according to claim 1 and 2, it is characterized in that: the diameter of said master gear is less than the diameter of pinion.
4. the biography chip system of a kind of dry etching inorganic material base plate plasma body etching machine according to claim 3, it is characterized in that: said servomotor is fixedly connected on the forevacuum chamber through the servomotor locator.
5. the biography chip system of a kind of dry etching inorganic material base plate plasma body etching machine according to claim 4, it is characterized in that: said screw mandrel is fixedly connected on the forevacuum chamber through the screw mandrel locator.
6. the biography chip system of a kind of dry etching inorganic material base plate plasma body etching machine according to claim 5 is characterized in that: said feed screw nut cooperates with guide-track groove in the forevacuum chamber and moves.
7. the biography chip system of a kind of dry etching inorganic material base plate plasma body etching machine according to claim 6 is characterized in that: said servomotor all is connected through screw with the feed screw nut with back spacer, said manipulator with rotor, said predetermination bit slice with forevacuum chamber, said predetermination bit slice with forevacuum chamber, said screw mandrel locator with servomotor locator, said servomotor potentiometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203527314U CN202307824U (en) | 2011-09-20 | 2011-09-20 | Chip transfer system of plasma etching machine for etching inorganic material substrate by adopting dry method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203527314U CN202307824U (en) | 2011-09-20 | 2011-09-20 | Chip transfer system of plasma etching machine for etching inorganic material substrate by adopting dry method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202307824U true CN202307824U (en) | 2012-07-04 |
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ID=46376666
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203527314U Expired - Lifetime CN202307824U (en) | 2011-09-20 | 2011-09-20 | Chip transfer system of plasma etching machine for etching inorganic material substrate by adopting dry method |
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|---|---|
| CN (1) | CN202307824U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102368474A (en) * | 2011-09-20 | 2012-03-07 | 嘉兴科民电子设备技术有限公司 | Chip transporting system of plasma etcher for carrying out dry etching on inorganic material substrate |
-
2011
- 2011-09-20 CN CN2011203527314U patent/CN202307824U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102368474A (en) * | 2011-09-20 | 2012-03-07 | 嘉兴科民电子设备技术有限公司 | Chip transporting system of plasma etcher for carrying out dry etching on inorganic material substrate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: TIANTONG JICHENG MECHINE TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: JIAXING MICROELECTRONIC INSTRUMENT + EQUIPMENT ENGINEERING CENTER, CAS Effective date: 20120831 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 314006 JIAXING, ZHEJIANG PROVINCE TO: 314423 HAINING CITY, ZHEJIANG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120831 Address after: 314423 No. 129, Shuang Lian Road, Haining Economic Development Zone, Zhejiang, China Patentee after: TDG Machinery Technology Co., Ltd. Address before: Jiaxing City, Zhejiang province 314006 Nanhu District Ling Gong Tang Road No. 3339 (Jiaxing city) Patentee before: Jiaxing Microelectronics Instrument and Equipment Engineering Center of Chinese Academy of Sciences |
|
| CX01 | Expiry of patent term |
Granted publication date: 20120704 |
|
| CX01 | Expiry of patent term |