CN102368466B - Electrode of plasma etcher for carrying out dry etching on hard inorganic material substrate - Google Patents
Electrode of plasma etcher for carrying out dry etching on hard inorganic material substrate Download PDFInfo
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- CN102368466B CN102368466B CN2011102795936A CN201110279593A CN102368466B CN 102368466 B CN102368466 B CN 102368466B CN 2011102795936 A CN2011102795936 A CN 2011102795936A CN 201110279593 A CN201110279593 A CN 201110279593A CN 102368466 B CN102368466 B CN 102368466B
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Abstract
The invention relates to an electrode of a plasma etcher for carrying out dry etching on a hard inorganic material substrate, which comprises a guide rail device for being fixedly connected with an etching cavity. A lifter capable of taking the lifting and descending motion in the guide rail device is arranged in the guide rail device. The lifter is fixedly connected with a lower electrode tray. The lower electrode tray is arranged above the guide rail device. The lower electrode tray comprises a top disk and a bottom disk which are fixedly connected. The lower part of the top disk is provided with a cylindrical groove. A gas homogenizing disk is fixedly arranged in the cylindrical groove. Gaps are reserved between the gas homogenizing disk and the top disk as well as between the gas homogenizing disk and the bottom disk. The center of the gas homogenizing disk is provided with a frist through hole for ensuring gas to be communicated to the top disk. The first through hole is communicated with a cooling gas inlet. The center of the bottom of the bottom disk is provided with a second through hole. The second through hole is isolated from the first through hole. The bottom end of the second through hole is connected with a sealed tube. The second through hole is communicated with a cooling gas outlet. The electrode has the beneficial effect that the cooling effect is good so that the etching effect is good.
Description
Technical field
The present invention relates to a kind of electrode of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials.
Background technology
Etching is a kind of considerable processing step in semiconductor fabrication process, microelectronics IC manufacturing process and minute manufacturing technique, is a kind of main technique that graphical (pattern) that interrelate with photoetching processes.So-called etching, in fact to understand be exactly photoetching corrosion to narrow sense, first by photoetching, photoresist carried out to the photolithographic exposure processing, then by alternate manner, realizes that corrosion treatment falls required part of removing.Development along with micro-manufacturing process; Broadly say, be etched into a kind of general designation of peeling off, remove material by solution, reactive ion or other mechanical system, become a kind of pervasive call of micro-processing and manufacturing.The simplest the most frequently used classification of etching is dry etching and wet etching.The dry etching kind is a lot, comprises photoablation, gaseous corrosion, plasma etching etc.Its advantage is: anisotropy is good, selects than high, and controllability, dirigibility, reproducible, easily realize robotization, and without chemical waste fluid, processing procedure is not introduced pollution, and cleanliness factor is high.Shortcoming is: cost is high, the equipment complexity.The dry etching principal mode has pure chemistry process (as protected type, downstream formula, bucket formula), pure physical process (as ion beam milling), physical and chemical process, the commonly used ion etching RIE that responds, ion beam-assisted free radical etching ICP etc.
With other lithographic technique, compare, the ICP lithographic technique is simple in structure, cost performance is high, the aspect ratio of device is larger, install more miniaturization and simple to operate.The ICP source has the homogeneity in diameter 20cm scope at least simultaneously, can independently control ion concentration and ion energy, has become comparatively desirable plasma source at present.The ICP reaction can be greater than
High-density plasma, in order to realize advanced process.For example, the deep etching silicon chip, can obtain high etch rate at normal temperatures, and the vertical wide ratio of high etching and high selectivity, keep sidewall simultaneously.This etching technics is widely used in various deep etchings, in the making as MEMS.By between passivation and etching, adding the step of a depassivation, or, by controlling the thickness of polymeric foil, rationally regulate other etching parameters, not only can etch anisotropic end face, and can be so that the end face inclination angle changes within the specific limits.Utilize ICP lithographic technique etch silicon sill and
Compounds of group can obtain good etching effect equally.
The ICP lithographic technique is widely used in microelectronics, LED and photovoltaic field.The ICP lithographic technique is also for the preparation of the substrate of HB-LED.
Sapphire Substrate is the base layer support of LED, by MOCVD, grows successively on Sapphire Substrate
Low temperature nucleating layer, N-type doped layer, Multiple Quantum Well (MQW) layer, P type doped layer, then make electrode, just can make LED.On Sapphire Substrate, do figure by photoetching and etching and just can obtain graphical sapphire substrate, namely Patterned Sapphire Substrate, be called for short PSS.The purpose of photoetching process is to need with photoresist the sapphire of etching to appear, and will not need the sapphire shielding of etching; The purpose of etching is the part sapphire etching of being protected by photoresist not, to form figure.With Sapphire Substrate, compare, graphical sapphire substrate has significant advantage.At first, after Sapphire Substrate is carried out to graphical treatment, grow at substrate surface
The time, sapphire with
Lattice mismatch can reduce, thereby reduce the helical dislocation caused by lattice mismatch, just can effectively reduce light induced electron-hole non-radiative compound to what due to helical dislocation, cause, improve the internal quantum efficiency of LED, the brightness of enhancing LED; Secondly, because the light produced from Multiple Quantum Well only has the single direction of propagation, if light can increase the scattering of light through the Sapphire Substrate of graphical treatment, this just makes light that a plurality of directions of propagation are arranged.The light transmition produced from Multiple Quantum Well is during to air-sapphire interface, if incident angle is greater than
(
The refractive index of air,
For sapphire refractive index), light generation total reflection, return to LED; If incident angle is less than
, light will reflect, and propagates in air.And the design of LED is unidirectional bright dipping, do not wish that light penetrates from Sapphire Substrate one side.After being PSS, the figure on Sapphire Substrate has increased the scattering of light, makes light that the more direction of propagation be arranged, just there is more light generation total reflection to return to LED, these light will so just improve the light eduction rate of LED from the exiting surface bright dipping, strengthen the brightness of LED.
Make PSS significant to the brightness that improves LED, and the sapphire sheet after photoetching will could form PSS through over etching, therefore, etching is the critical process step of making in PSS technique.The purpose of etching is optionally to remove the part saphire substrate material according to the situation of photoetching.Namely utilize and be in plasmoid
With
Sapphire Substrate is carried out to physical bombardment and chemical corrosion, Sapphire Substrate not covered by photoresist is etched away, and part Sapphire Substrate covered by photoresist is not etched.Like this, after etching machine is processed, just on Sapphire Substrate, form figure, make Sapphire Substrate.
The etch rate of sapphire etching machine and etching homogeneity are most important to the making of Sapphire Substrate.At first, etch rate is fast, and the etching time required for identical etching depth is just few, and production efficiency just can be improved.Secondly, etching homogeneity has conclusive effect for the yield that improves the PSS product.As good uniformity in chankings, on the basis that guarantees the luminescence efficiency unitarity, on same a slice sapphire sheet, just can be partitioned into more LED substrate so; If between the sapphire sheet sheet, homogeneity is better, 23 sapphire sheet can, as the substrate of high-brightness LED, not there will be useless sheet so.
Bottom electrode is not only the support of etching system etching substrate, and is that etch chamber ionic medium system passes through lower bias voltage, thereby makes the accelerated motion of plasma subtegulum carry out physical bombardment to substrate, with the supporting etching of carrying out of chemical corrosion.
There are problems in the bottom electrode of the existing etching machine of ICP for the etching inorganic material substrate.At first, electrode disk can only be placed a wafer, causes etching system can only carry out the monolithic etching, is unfavorable for large-scale production.Secondly, in order to obtain etching result preferably, need to adopt gas-cooled method to carry out cooling to single substrate, cooling draught is easy to substrate is blown afloat and departs from original position, therefore, electrode system will attach tablet press mechanism, and it has increased the difficulty of electrode system design and processing.
Summary of the invention
The bottom electrode that the present invention will solve the existing etching machine of ICP for the etching inorganic material substrate exists can not large-scale production, baroque problem, and a kind of simple in structure, electrode of the plasma etcher for carrying out dry etching on substrates made of hard inorganic materials of etching in batches is provided.
The technical solution used in the present invention is:
A kind of electrode of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials, comprise the guide rail device for being fixedly connected with etch chamber, the lifter that can do elevating movement within it is installed in described guide rail device, on described lifter, be fixedly connected with the bottom electrode pallet, described bottom electrode pallet is arranged on the top of guide rail device, it is characterized in that: described bottom electrode pallet comprises taking over a business and chassis of being fixedly connected with, described bottom of taking over a business has cylindrical groove, in described cylindrical groove, be installed with even gas dish, described even gas dish with take over a business, between chassis, be equipped with gap, described even Qi Pande center is provided with leads to first through hole of taking over a business by gas, described the first through hole is communicated with the cold gas entrance, the bottom centre on described chassis has the second through hole, and described the second through hole and the isolation of the first through hole arrange, and the bottom of described the second through hole is connected with sealed tube, and described the second through hole is communicated with the cold gas outlet.
Further, described lifter is arranged on the screw mandrel that drives its motion, and the bottom of described screw mandrel is connected with the output shaft of servomotor, and on the rotating screw mandrel fixator be arranged in guide rail device of described screw mandrel, described servomotor is arranged on the bottom of guide rail device.
Further, described bottom electrode pallet is fixedly connected on the top of lifter by support bar.
Further, the diameter of described even gas dish is less than the diameter of cylindrical groove.
Further, described take over a business with chassis between, described take over a business with even gas dish between, between between described screw mandrel fixator and guide rail device, between described support bar and bottom electrode pallet, between described support bar and lifter, between described servomotor and guide rail device and described sealed tube and chassis, all by screw, be fixedly connected with.
The present invention starts screw mandrel with servomotor and rotates, and the screw mandrel left-right rotation drives moving up and down of lifter, moves up and down and transports wafer thereby lifter drives the bottom electrode pallet.Described bottom electrode pallet can hold up the multi-disc wafer, is applicable to etching in batches.In order to obtain etching result preferably, the bottom electrode pallet needs cooling.The present invention imports to cold gas the first through hole and enters in the cylindrical groove of taking over a business from the cold gas entrance by even gas dish, thereby reach cooling purpose of taking over a business, can avoid like this be cooled air-flow of gas of wafer to rush, no longer need the compressing tablet system to carry out the compressing tablet operation; And cold gas can be through second through hole on chassis from flowing out the cold gas outlet, cold gas can coolingly be taken over a business from the cold gas entrance, entering endlessly, make cooling effect more, obtain better etching result.
Use procedure of the present invention:
1, guide rail device is connected with the etch chamber bottom, adopts the O-ring seal sealing between the two;
2, mechanical arm is sent to the sheet dish center of etch chamber from the forevacuum chamber;
3, start servomotor, its output shaft starts to rotate, and drives screw mandrel and rotates;
4, the rotation of screw mandrel drives the lifter rising;
5, the lifter rising drives the rising of bottom electrode pallet, by sheet dish jack-up certain altitude;
6, mechanical arm is withdrawn from etch chamber, valve closing;
7, refrigerating gas enters even gas dish from the cold gas entrance, takes away the heat of bottom electrode pallet, derives from the cold gas outlet;
8, after etching process finished, mechanical arm entered the center of etch chamber from the forevacuum chamber;
9, servomotor cuts out rotation direction, and bottom electrode pallet and sheet dish start to descend, and when dropping to the mechanical arm sustained height, the sheet dish drops on mechanical arm, and the bottom electrode pallet continues to drop to original position;
10, mechanical arm carries the sheet dish and withdraws from etch chamber.
Beneficial effect of the present invention:
(1) good cooling results of bottom electrode pallet, thus make etching effect good.
(2) due to the bottom electrode pallet, begin coolingly internally, avoid the be cooled air-flow of gas of wafer to rush, no longer need the compressing tablet system to carry out the compressing tablet operation, structure is more simple and reliable.
(3) the bottom electrode pallet can hold up the multi-disc wafer, is applicable to etching in batches, is beneficial to large-scale production.
The accompanying drawing explanation
Fig. 1 is perspective view of the present invention.
Fig. 2 is longitudinal sectional view of the present invention.
Embodiment
Below in conjunction with specific embodiment, the present invention is further described, but does not limit the invention to these embodiments.One skilled in the art would recognize that the present invention contained all alternativess, improvement project and the equivalents that may comprise in claims scope.
With reference to Fig. 1, Fig. 2, a kind of electrode of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials, comprise the guide rail device 2 for being fixedly connected with etch chamber, the lifter 4 that can do elevating movement within it is installed in described guide rail device 2, on described lifter 4, be fixedly connected with the bottom electrode pallet, described bottom electrode pallet is arranged on the top of guide rail device 2, described bottom electrode pallet comprise be fixedly connected with take over a business 7 and chassis 8, describedly take over a business 7 bottom and have cylindrical groove, in described cylindrical groove, be installed with even gas dish 12, described even gas dish 12 with take over a business 7, between chassis 8, be equipped with gap, described even gas Pan12De center is provided with leads to first through hole 13 of taking over a business by gas, described the first through hole 13 is communicated with cold gas entrance 9, the bottom centre on described chassis 8 has the second through hole 14, and described the second through hole 14 and the first through hole 13 isolation arrange, and the bottom of described the second through hole 13 is connected with sealed tube 10, and described the second through hole 14 is communicated with cold gas outlet 11.
Described lifter 4 is arranged on the screw mandrel 5 that drives its motion, and the bottom of described screw mandrel 5 is connected with the output shaft of servomotor 1, and on the rotating screw mandrel fixator 3 be arranged in guide rail device 2 of described screw mandrel 5, described servomotor 1 is arranged on the bottom of guide rail device 2.
Described bottom electrode pallet is fixedly connected on the top of lifter 4 by support bar 6.
The diameter of described even gas dish 12 is less than the diameter of cylindrical groove.
Described take over a business 7 with chassis 8 between, described take over a business 7 with even gas dish 12 between, between between described screw mandrel fixator 3 and guide rail device 2, between described support bar 6 and bottom electrode pallet, between described support bar 6 and lifter 4, between described servomotor 1 and guide rail device 2 and described sealed tube 10 and chassis 8, all by screw, be fixedly connected with.
The present invention starts screw mandrel 5 with servomotor 1 and rotates, and screw mandrel 5 left-right rotation drive moving up and down of lifters 4, moves up and down and transports wafer thereby lifter 4 drives the bottom electrode pallets.Described bottom electrode pallet can hold up the multi-disc wafer, is applicable to etching in batches.In order to obtain etching result preferably, the bottom electrode pallet needs cooling.The present invention imports to cold gas the first through hole 13 and enters in 7 cylindrical groove from cold gas entrance 9 by even gas dish 12, thereby reach cooling 7 the purpose of taking over a business, can avoid like this be cooled air-flow of gas of wafer to rush, no longer need the compressing tablet system to carry out the compressing tablet operation; And cold gas can be through second through hole 14 on chassis 8 from flowing out cold gas outlet 11, make cold gas coolingly take over a business 7 from cold gas entrance 9, entering endlessly, make cooling effect more, obtain better etching result.
Use procedure of the present invention:
1, guide rail device 2 is connected with the etch chamber bottom, adopts the O-ring seal sealing between the two;
2, mechanical arm is sent to the sheet dish center of etch chamber from the forevacuum chamber;
3, start servomotor 1, its output shaft starts to rotate, and drives screw mandrel 5 and rotates;
4, the rotation of screw mandrel 5 drives lifter 4 risings;
5, lifter 4 risings drive the rising of bottom electrode pallet, by sheet dish jack-up certain altitude;
6, mechanical arm is withdrawn from etch chamber, valve closing;
7, refrigerating gas enters even gas dish 12 from cold gas entrance 9, takes away the heat of bottom electrode pallet, derives from cold gas outlet 11;
8, after etching process finished, mechanical arm entered the center of etch chamber from the forevacuum chamber;
9, servomotor 1 cuts out rotation direction, and bottom electrode pallet and sheet dish start to descend, and when dropping to the mechanical arm sustained height, the sheet dish drops on mechanical arm, and the bottom electrode pallet continues to drop to original position;
10, mechanical arm carries the sheet dish and withdraws from etch chamber.
Claims (5)
1. the electrode of a plasma etcher for carrying out dry etching on substrates made of hard inorganic materials, comprise the guide rail device for being fixedly connected with etch chamber, the lifter that can do elevating movement within it is installed in described guide rail device, on described lifter, be fixedly connected with the bottom electrode pallet, described bottom electrode pallet is arranged on the top of guide rail device, it is characterized in that: described bottom electrode pallet comprises taking over a business and chassis of being fixedly connected with, described bottom of taking over a business has cylindrical groove, in described cylindrical groove, be installed with even gas dish, described even gas dish with take over a business, between chassis, be equipped with gap, described even Qi Pande center is provided with leads to first through hole of taking over a business by gas, described the first through hole is communicated with the cold gas entrance, the bottom centre on described chassis has the second through hole, and described the second through hole and the isolation of the first through hole arrange, and the bottom of described the second through hole is connected with sealed tube, and described the second through hole is communicated with the cold gas outlet.
2. the electrode of a kind of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials according to claim 1, it is characterized in that: described lifter is arranged on the screw mandrel that drives its motion, the bottom of described screw mandrel is connected with the output shaft of servomotor, on the rotating screw mandrel fixator be arranged in guide rail device of described screw mandrel, described servomotor is arranged on the bottom of guide rail device.
3. the electrode of a kind of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials according to claim 1 and 2, it is characterized in that: described bottom electrode pallet is fixedly connected on the top of lifter by support bar.
4. the electrode of a kind of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials according to claim 3, it is characterized in that: the diameter of described even gas dish is less than the diameter of cylindrical groove.
5. the electrode of a kind of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials according to claim 4 is characterized in that: described take over a business with chassis between, described take over a business with even gas dish between, between between described screw mandrel fixator and guide rail device, between described support bar and bottom electrode pallet, between described support bar and lifter, between described servomotor and guide rail device and described sealed tube and chassis, all by screw, be fixedly connected with.
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| CN102368466B true CN102368466B (en) | 2013-11-27 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1661433A (en) * | 2004-02-26 | 2005-08-31 | 东京毅力科创株式会社 | Processing apparatus and method for removing particles therefrom |
| CN202307823U (en) * | 2011-09-20 | 2012-07-04 | 中国科学院嘉兴微电子仪器与设备工程中心 | Electrode of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5766640A (en) * | 1980-10-09 | 1982-04-22 | Mitsubishi Electric Corp | Dry etching device |
| IL116156A0 (en) * | 1994-12-05 | 1996-01-31 | Hughes Aircraft Co | Cooled gas distribution system for a plasma |
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- 2011-09-20 CN CN2011102795936A patent/CN102368466B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1661433A (en) * | 2004-02-26 | 2005-08-31 | 东京毅力科创株式会社 | Processing apparatus and method for removing particles therefrom |
| CN202307823U (en) * | 2011-09-20 | 2012-07-04 | 中国科学院嘉兴微电子仪器与设备工程中心 | Electrode of plasma etcher for carrying out dry etching on substrates made of hard inorganic materials |
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Owner name: TIANTONG JICHENG MECHINE TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: JIAXING KEMIN ELECTRONIC EQUIPMENT TECHNOLOGY CO., LTD. Effective date: 20131016 |
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Inventor after: Ping Zhihan Inventor after: Su Jinghong Inventor after: Huang Chengqiang Inventor after: Wang Minggang Inventor after: Chen Bo Inventor after: Li Chaobo Inventor before: Huang Chengqiang Inventor before: Wang Minggang Inventor before: Chen Bo Inventor before: Li Chaobo |
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Free format text: CORRECT: INVENTOR; FROM: HUANG CHENGQIANG WANG MINGGANG CHEN BO LI CHAOBO TO: PING ZHIHAN SU JINGHONG HUANG CHENGQIANG WANG MINGGANG CHEN BO LI CHAOBO Free format text: CORRECT: ADDRESS; FROM: 314006 JIAXING, ZHEJIANG PROVINCE TO: 314400 JIAXING, ZHEJIANG PROVINCE |
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