CN101640230A - Dry etching method for two-color HgCdTe device and etching device thereof - Google Patents
Dry etching method for two-color HgCdTe device and etching device thereof Download PDFInfo
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- CN101640230A CN101640230A CN200910092188A CN200910092188A CN101640230A CN 101640230 A CN101640230 A CN 101640230A CN 200910092188 A CN200910092188 A CN 200910092188A CN 200910092188 A CN200910092188 A CN 200910092188A CN 101640230 A CN101640230 A CN 101640230A
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Abstract
The invention discloses a dry etching method for a two-color HgCdTe device and an etching device thereof. The device comprises a radio frequency source which is connected with an inductive coupling coil surrounding a reaction chamber, and the other radio frequency source which is connected with a lower electrode at the lower end of the reaction chamber. The method comprises the following steps: forming a photoresist masking graphics on the surface of the HgCdTe device; fixing the HgCdTe device in the etching device, and then vacuumizing the etching device; and leading a mixed gas of argon, hydrogen and methane, and carrying out dry etching. In the mesa molding process of the two-color HgCdTe detector, the invention effectively reduces damage resulted from dry etching on the surface of thedeep mesa two-color device, thus significantly reducing leakage current on the surface of the side wall of the mesa of the two-color device, and solving a series of technical problems of the device such as poor electrical performance, low finished product rate and the like resulted from high surface damage in the mesa molding process of the two-color HgCdTe device.
Description
Technical field
The present invention relates to the semiconductor etching technical field, particularly relate to a kind of dry etching method and etching device that is used for two-color HgCdTe device.
Background technology
The outer focal plane detection technology of dual-color red has two waveband and surveys, can obtain more remarkable advantages such as appearance mark information, with relevant civil area wide application prospect is arranged in military affairs such as target homing, missile warning detection, information scoutings.
The dry etch process of mercury cadmium telluride double-color detector spare is one of critical process of HgCdTe infrared focal plane detector, and the particularity of mercury cadmium telluride itself makes the table top dry etch process of device must realize ultralow damage.Mercury cadmium telluride (HgCdTe) is a kind of II-VI compound semiconductor, the valence link of mercury in this material (Hg) element a little less than, very unstable, comparatively responsive to outside particle bombardment and technological temperature.Usually, on P-type material, when the surface is arrived in the particle bombardment of certain energy, will make some Hg valence bonds fractures of material surface that Hg displacement, formation surface damage even surperficial transoid take place.In addition, when temperature was higher, the Hg valence bond in the material also very easily ruptured, and caused the Hg element to overflow from the surface and formed damage.The device damage that any reason causes all can cause the decline of device electric property even lose efficacy.
Conventional table top moulding process has wet etching and dry etching two major types, traditional wet corrosion technique damage is lower, shortcomings such as but undercutting is serious because wet corrosion technique exists, corrosion depth poor repeatability, uniformity are bad, be difficult to adapt to the processing of thin and dark live width figure, be not suitable for the deep mesa contour machining procedure of two-color HgCdTe infrared focal plane detector.
It is several that the comparatively traditional dry etch process of mercury cadmium telluride mesa devices mainly contains IBE, ECR and RIE etc. at present.IBE (Ion Beam Etch, ion beam etching) has directivity and higher etch rate preferably, but because its ion energy is bigger, can cause mercury cadmium telluride surface bombardment damage, seldom uses in the etching technics of mercury cadmium telluride.ECR (Electron Cyclotron Resonance, the Ecr plasma etching) adopted the power source and the separate design of bottom electrode automatic bias power source that will produce plasma, utilize the principle of electron cyclotron resonace, in reative cell, produce highdensity plasma, can reach higher etch rate and etching pattern preferably.But because this kind equipment has heating effect clearly when technology is carried out, substrate temperature is sharply raise, cause the material fire damage.Early stage RIE (Reactive Ion Etch, reactive ion etching) technology is utilized capacitive coupling, produces plasma and certain automatic bias between the power-on and power-off pole plate of equipment.A single capacitive coupling device takes place only to lean in its plasma of this more early stage technology, is difficult to obtain the plasma of high concentration, and etch rate is lower.And single capacitive coupling structure can't be realized the independent control of bottom electrode automatic bias and plasma density.The deep mesa etching technics needs higher plasma density realize high etch rate, at this moment must increase RF power, but automatic bias can rise thereupon, can cause serious bombardment damage to the mercury cadmium telluride surface.
Summary of the invention
The invention provides a kind of dry etching method that is used for two-color HgCdTe device and etching device of low damage, in order to solve the high damage problem that exists in the prior art in the mesa devices deep mesa moulding process.
For solving the problems of the technologies described above, on the one hand, the invention provides a kind of etching device that is used for the two-color HgCdTe device dry etching, described device comprises two independently radio frequency sources, wherein, radio frequency source links to each other with inductance-coupled coil around being looped around reaction chamber, and another radio frequency source links to each other with the bottom electrode of reative cell lower end.
On the other hand, the invention provides a kind of method of utilizing above-mentioned etching device to carry out dry etching, said method comprising the steps of:
Form the photoresist mask pattern on the HgCdTe device surface;
Described HgCdTe device is fixed in the etching device, then described etching device is vacuumized;
Feed the mist of argon gas, hydrogen and methane, carry out dry etching.
Wherein, described etching device is vacuumized, require vacuum degree less than 10nbar.
Wherein, the mixed proportion of described argon gas, hydrogen and methane is: 5～10: 5～10: 1～5.
Wherein, described inductance-coupled coil power is 150-300W, and the radio-frequency power at bottom electrode place is 20-150W.
Wherein, behind the feeding mist, the operating pressure 1-20mTorr in the reaction chamber.
Wherein, after dry etching, further comprising the steps of:
Described HgCdTe device is immersed in the acetone soln, remove the photoresist of patterned surface, with deionized water acetone soln is rinsed well again;
The described HgCdTe device of rinsing well is put into the bromine methanol solution, it is carried out wet-chemical etching, after corrosion finishes, with deionized water that the bromine washed with methanol is clean again.
Wherein, after wet-chemical etching, also comprise: described HgCdTe device is carried out the passivation film growth.
Wherein, described passivation film is
CdTe add
ZnS.
Wherein, the HgCdTe device behind the growth of passivation rete is heat-treated, wherein, heat treatment temperature is 200-300 ℃, and heat treatment time is 5-20 minute.
Beneficial effect of the present invention is as follows:
In the table top moulding process of two-color HgCdTe detector, reduced the dry etching damage of the double-colored device surface of deep mesa effectively, thereby reduced the tracking current of double-colored part table sidewall to a great extent, solved two-color HgCdTe deep mesa part table moulding process surface damage height, cause series of technical such as the device electric property is poor, rate of finished products is low, to the lifting of the double-colored deep mesa device performance of the next generation, rate of finished products improves that bigger contribution is arranged.
Description of drawings
Fig. 1 is a kind of structural representation that is used for the etching device of two-color HgCdTe device dry etching of the embodiment of the invention;
Fig. 2 is the structural representation of a kind of heat treatment damage of embodiment of the invention cancellation element;
Fig. 3 is the two-color HgCdTe mesa structure etching effect figure of the embodiment of the invention;
Fig. 4 is the partial enlarged drawing of Fig. 3;
Fig. 5 is a kind of flow chart that is used for the dry etching method of two-color HgCdTe device of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, does not limit the present invention.
The present invention is mainly used in the two-color HgCdTe device technology, solves the high damage problem that the deep mesa moulding process causes material surface.By adopting novel lithographic technique and special exploitation to be used for the process conditions of low damage, two-forty etching, add a series of wet-chemical etching and Technology for Heating Processing after the etching, can reduce and eliminate the damage of two-color HgCdTe device table top moulding process well.
The present invention is by adopting novel ICP (Inductive Coupled Plasma, inductively coupled plasma etching) dry etching device, and the process conditions that low damage etch was developed, was used for to cooperation with specialized designs reduce etching injury to the full extent; Wet-chemical and Technology for Heating Processing behind the cooperation dry etching reach the effect that effective elimination damages, and guarantee that this deep mesa moulding scheme can ensure and improve device performance to the full extent.
Plurality of advantages such as ICP dry plasma etch technology has ultralow damage, machining accuracy height, the lines steepness is good, process stabilizing is controlled.The etching device that is used for the two-color HgCdTe device dry etching of present embodiment comprises and adopts two independent radio frequency sources, and the automatic bias power source of the power source of plasma generation and bottom electrode is separate.Wherein, radio frequency source links to each other (ICPPower) with inductance-coupled coil around being looped around reaction chamber, as plasma generating device, controls the density of plasma separately.Another independently radio frequency source link to each other (RF Power) with the bottom electrode of reative cell lower end, by changing the automatic bias size that radio frequency source power comes independent control appliance bottom electrode place.Therefore can when the bottom electrode automatic bias is very low, keep highdensity plasma, promptly realize higher etch rate simultaneously at the very low bombardment damage of realization.As shown in Figure 1, be provided with inductance-coupled coil (ICP coil) around the plasma reaction chamber 4, inductance-coupled coil is connected with first radio freqnency generator 1.Plasma reaction chamber 4 lower ends are provided with bottom electrode, and bottom electrode is connected with second radio freqnency generator 2, are provided with wafer on bottom electrode top and fix and carry on the back device for cooling 3, are used for fixing wafer and reduce chip temperature.Plasma reaction chamber 4 tops are provided with the nearly gas port 5 of process gas.
As shown in Figure 5, using said apparatus to carry out dry etching may further comprise the steps:
Step 101, etched features preparation: utilize photoetching technique being carved HgCdTe device surface formation photoresist mask pattern.
Step 102, the device that will be etched are fixed on wafer and fix and carry on the back (pallet) on the device for cooling 3, then etching device are vacuumized, and reach the predetermined vacuum values of equipment, and vacuum degree requires less than 10nbar.
Step 103, the beginning etching technics, process gas is selected argon Ar, hydrogen H for use
2With methane CH
4Mist, proportioning are 5～10: 5～10: 1～5.Three kinds of process gass all after mixing the nearly gas port 5 of the process gas of slave unit upper end feed in the plasma reaction chambers 4.Inductance-coupled coil power is 150-300W, and the radio-frequency power at bottom electrode place is 20-150W, the operating pressure 1-20mTorr in the plasma reaction chamber 4.The operating air pressure of ICP, can effectively reduce the gas molecule scattering and reaction product is more easily discharged far below the operating air pressure of RIE usually at 1～20mTorr in technology, realize etching pattern and pattern side wall steepness preferably.
After dry etch process is carried out, carry out corresponding wet-chemical etching and Technology for Heating Processing, remove certain thickness top layer affected layer, and the damage that produces in the etching process is effectively repaired, farthest guarantee the low damage of mesa devices etching technics by the proper heat treatment condition.Concrete steps are as follows:
Step 104, the wafer after etching finished takes off from the pallet of etching apparatus.Immerse in the acetone soln, remove the photoresist of patterned surface.With deionized water the acetone soln on the wafer is rinsed well again.
Step 105, wet-chemical etching: prepare bromine methyl alcohol corrosive liquid, the wafer of cleaning is put into the bromine methanol solution, wafer is carried out wet-chemical etching, remove the top layer affected layer that forms in the etching process.With deionized water that the bromine washed with methanol is clean again.
Step 106, device passivating film system growth: the passivation film growth is carried out on the table top top layer after the etching.Passivation film is
CdTe add
(
Be dust, be thickness unit,
) ZnS.
Step 107, damage is eliminated in heat treatment: this step realizes by heat treatment damage cancellation element, as shown in Figure 2, the heat treatment damage cancellation element of present embodiment comprises thermal source 6, quartzy anchor clamps 7, quartzy slide block 8, hot coupling pipe 9 and housing, wherein, thermal source 6 is positioned at the inner terminal of housing, and quartzy anchor clamps 7 are connected with quartzy slide block 8, can slide in housing with quartzy slide block 8.Be provided with hot coupling pipe 9 in quartzy anchor clamps 7 one sides.Wafer behind the growth of passivation rete is installed on the quartzy anchor clamps 7 in the annealing device, adopt 200-300 ℃ of heat treatment temperature, heat treatment time: 5-20 minute, wafer is heat-treated, make the impaired lattice energy on device top layer in the dry etching process access reparation to a certain degree, and make the top layer lattice reach coupling preferably, thereby further eliminate lattice damage and the tracking current that the material surface place produces in the etching process with the passivation film lattice.
HgCdTe material etch rate under these process conditions reaches 150nm/min, and when etching depth reached 10um, the mesa etch pattern is comparatively desirable (as shown in Figure 3, Figure 4) still.Device electrical testing result after the etching shows, this dried, wet method combination, and cooperate the deep mesa part table moulding scheme of corresponding Technology for Heating Processing, can avoid and eliminate the etching injury of double-colored deep mesa device well, thereby can reduce the tracking current in the device well and improve device performance to greatest extent.
Pattern better as a result, the table top sidewall is steep for the etching that obtains by said method, device wet-chemical and the laggard column electrode of heat treatment are being drawn, a series of electrical parameters such as I-V characteristic by measuring element, verifying parts is functional, illustrates that this technical scheme has lower damage to the double-colored deep mesa device of mercury cadmium telluride.In the table top moulding process of two-color HgCdTe detector, reduced the dry etching damage of the double-colored device surface of deep mesa effectively, thereby reduced the tracking current of double-colored part table sidewall to a great extent, solved two-color HgCdTe deep mesa part table moulding process surface damage height, cause series of technical such as the device electric property is poor, rate of finished products is low, to the lifting of the double-colored deep mesa device performance of the next generation, rate of finished products improves that bigger contribution is arranged.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1, a kind of etching device that is used for the two-color HgCdTe device dry etching, it is characterized in that described device comprises two independently radio frequency sources, wherein, radio frequency source links to each other with inductance-coupled coil around being looped around reaction chamber, and another radio frequency source links to each other with the bottom electrode of reative cell lower end.
2, a kind of method of utilizing the described etching device of claim 1 to carry out dry etching is characterized in that, said method comprising the steps of:
Form the photoresist mask pattern on the HgCdTe device surface;
Described HgCdTe device is fixed in the etching device, then described etching device is vacuumized;
Feed the mist of argon gas, hydrogen and methane, carry out dry etching.
3, method as claimed in claim 2 is characterized in that, described etching device is vacuumized, and requires vacuum degree less than 10nbar.
4, method as claimed in claim 2 is characterized in that, the mixed proportion of described argon gas, hydrogen and methane is: 5～10: 5～10: 1～5.
5, method as claimed in claim 2 is characterized in that, described inductance-coupled coil power is 150-300W, and the radio-frequency power at bottom electrode place is 20-150W.
6, method as claimed in claim 2 is characterized in that, behind the feeding mist, and the operating pressure 1-20mTorr in the reaction chamber.
7, method as claimed in claim 2 is characterized in that, and is after dry etching, further comprising the steps of:
Described HgCdTe device is immersed in the acetone soln, remove the photoresist of patterned surface, with deionized water acetone soln is rinsed well again;
The described HgCdTe device of rinsing well is put into the bromine methanol solution, it is carried out wet-chemical etching, after corrosion finishes, with deionized water that the bromine washed with methanol is clean again.
8, method as claimed in claim 7 is characterized in that, after wet-chemical etching, also comprises: described HgCdTe device is carried out the passivation film growth.
9, method as claimed in claim 8 is characterized in that, described passivation film is
CdTe add
ZnS.
10, method as claimed in claim 8 is characterized in that, the HgCdTe device behind the growth of passivation rete is heat-treated, and wherein, heat treatment temperature is 200-300 ℃, and heat treatment time is 5-20 minute.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910092188A CN101640230A (en) | 2009-09-04 | 2009-09-04 | Dry etching method for two-color HgCdTe device and etching device thereof |
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| CN200910092188A CN101640230A (en) | 2009-09-04 | 2009-09-04 | Dry etching method for two-color HgCdTe device and etching device thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236468A (en) * | 2013-04-16 | 2013-08-07 | 中国电子科技集团公司第十一研究所 | Low-damage high-uniformity etching method for hgcdte materials |
| CN103392235A (en) * | 2010-12-27 | 2013-11-13 | 艾思科集团有限公司 | Improved method for manufacturing a photovoltaic device comprising a TCO layer |
| CN105789041A (en) * | 2014-12-24 | 2016-07-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for etching BiSbTe substrate |
| CN109887872A (en) * | 2019-03-29 | 2019-06-14 | 华南理工大学 | It is used to prepare the accurate etching device and its lithographic method of notched gates enhancement device |
| CN110783427A (en) * | 2019-10-17 | 2020-02-11 | 中国电子科技集团公司第十一研究所 | Small linewidth corrosion method for mercury cadmium telluride and mercury cadmium telluride infrared detector |
-
2009
- 2009-09-04 CN CN200910092188A patent/CN101640230A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103392235A (en) * | 2010-12-27 | 2013-11-13 | 艾思科集团有限公司 | Improved method for manufacturing a photovoltaic device comprising a TCO layer |
| CN103236468A (en) * | 2013-04-16 | 2013-08-07 | 中国电子科技集团公司第十一研究所 | Low-damage high-uniformity etching method for hgcdte materials |
| CN103236468B (en) * | 2013-04-16 | 2016-04-27 | 中国电子科技集团公司第十一研究所 | A kind of lithographic method for the low damage high uniformity of mercury cadmium telluride |
| CN105789041A (en) * | 2014-12-24 | 2016-07-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for etching BiSbTe substrate |
| CN109887872A (en) * | 2019-03-29 | 2019-06-14 | 华南理工大学 | It is used to prepare the accurate etching device and its lithographic method of notched gates enhancement device |
| CN110783427A (en) * | 2019-10-17 | 2020-02-11 | 中国电子科技集团公司第十一研究所 | Small linewidth corrosion method for mercury cadmium telluride and mercury cadmium telluride infrared detector |
| CN110783427B (en) * | 2019-10-17 | 2021-07-02 | 中国电子科技集团公司第十一研究所 | Small linewidth corrosion method for mercury cadmium telluride and mercury cadmium telluride infrared detector |
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Application publication date: 20100203 |