CN105789041A - Method for etching BiSbTe substrate - Google Patents
Method for etching BiSbTe substrate Download PDFInfo
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- CN105789041A CN105789041A CN201410815145.7A CN201410815145A CN105789041A CN 105789041 A CN105789041 A CN 105789041A CN 201410815145 A CN201410815145 A CN 201410815145A CN 105789041 A CN105789041 A CN 105789041A
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- gas
- bisbte
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- lithographic method
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Abstract
The invention provides a method for etching a BiSbTe substrate. The etching method comprises the following steps of placing the BiSbTe substrate formed with a mask pattern in an etching cavity; and etching the BiSbTe substrate formed with the mask pattern by an etching gas, wherein the etching gas comprises a chemical etching gas which can react with the BiSbTe substrate. The etching method provided by the invention is a dry etching method; and compared with a wet etching method, the etching method has the advantages that a required pattern can be accurately formed on the BiSbTe substrate.
Description
Technical field
The present invention relates to field of semiconductor processing, in particular it relates to a kind of lithographic method that BiSbTe substrate is performed etching.
Background technology
BiSbTe is a kind of novel semi-conducting material, generally adopts wet etching that BiSbTe base material is performed etching at present.But, when forming comparatively fine figure on BiSbTe base material, the figure controllability of wet etching is poor.Therefore, how to improve levels of precision when etching fine pattern on BiSbTe base material and become the technical problem that this area is urgently to be resolved hurrily.
Summary of the invention
It is an object of the invention to provide a kind of lithographic method that BiSbTe substrate is performed etching, utilize the pattern precision that BiSbTe substrate is performed etching acquisition by this lithographic method higher.
To achieve these goals, the present invention provides a kind of lithographic method that BiSbTe substrate is performed etching, and wherein, described lithographic method includes:
Will be formed with the BiSbTe substrate of mask pattern to put in etch chamber；
Utilizing etching gas that the BiSbTe substrate being formed with mask graph is performed etching, described etching gas includes the chemical etching gas that can react with described BiSbTe substrate.
Preferably, described chemical etching gas includes hydrogen and methane.
Preferably, described etching gas also includes physical etchings gas, and described physical etchings gas is the gas not reacted with BiSbTe substrate after ionization.
Preferably, described physical etchings gas is any one or a few the mixing in nitrogen, helium and argon.
Preferably, the ratio that the flow of described physical etchings gas ratio shared by the total flow of described etching gas is shared in the total flow of described etching gas more than the flow of any one gas in described chemical etching gas.
Preferably, described physical etchings gas is argon, and the flow of described physical etchings gas accounts for the 40%～70% of described etching gas total flow.
Preferably, the flow of described physical etchings gas is 30～100sccm.
Preferably, the flow of described physical etchings gas is 20～60sccm, and the flow of described chemical etching gas is 5～10sccm.
Preferably, when described BiSbTe substrate is performed etching, upper electrode power is 2000～2500W, and lower electrode power is 50～500W.
Preferably, when described BiSbTe substrate is performed etching, lower electrode power is 70～200W.
Preferably, described BiSbTe substrate is arranged on electrostatic chuck, and when described BiSbTe substrate is performed etching, the temperature of described electrostatic chuck is 40～80 DEG C.
Lithographic method provided by the present invention is dry etching, compared with wet etching, it is possible to form required figure more accurately on BiSbTe substrate.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and constitutes the part of description, is used for explaining the present invention, but is not intended that limitation of the present invention together with detailed description below.In the accompanying drawings:
Fig. 1 is the flow chart of lithographic method provided by the present invention；
Fig. 2 is the ultimate principle figure of plasma etch apparatus；
Fig. 3 is the scanning electron microscope (SEM) photograph of the figure obtained after BiSbTe substrate is performed etching by the preferred implementation utilizing lithographic method provided by the present invention；
Fig. 4 is the partial enlarged drawing of Fig. 3.
Description of reference numerals
1: nozzle 2: upper coil
3: etch chamber 4: plasma
5: electrostatic chuck 6: substrate
7: radio-frequency power supply 8: molecular pump
9: dry pump 10: cooler
Detailed description of the invention
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.It should be appreciated that detailed description of the invention described herein is merely to illustrate and explains the present invention, it is not limited to the present invention.
As it is shown in figure 1, the present invention provides a kind of lithographic method that BiSbTe substrate is performed etching, wherein, described lithographic method includes:
Will be formed with the BiSbTe substrate of mask pattern to put in etch chamber；
Utilizing etching gas that the BiSbTe substrate being formed with mask graph is performed etching, described etching gas includes the chemical etching gas that can react with described BiSbTe substrate.
Lithographic method provided by the present invention is a kind of dry etching method carried out in etch chamber, and etching gas enters after in etch chamber and is ionized to plasma.
When performing etching, the plasma that described chemical etching gas is formed after being ionized reacts with Bi, Sb and the Te in BiSbTe substrate respectively, generate compound, the compound of this generation comes off from BiSbTe substrate, such that it is able to do not have the part that mask pattern covers to form groove on BiSbTe substrate.
Lithographic method provided by the present invention is dry etching, compared with wet etching, it is possible to form required figure more accurately on BiSbTe substrate.
Shown in Fig. 2 is the plasma etching equipment used in dry etching.As shown in the figure, by the nozzle 1 of board central upper spray into etching substrate 6 needed for process gas, pass into radio frequency in board upper coil 2 simultaneously, the process gas sprayed within etch chamber 3 is excited and becomes plasma 4, radio-frequency power supply 7 is utilized to provide radio frequency for the electrostatic chuck 5 supporting substrate 6, produce bias voltage, make the surface of plasma bombardment substrate 6, make substrate 6 can etch required figure.After etching technics completes, utilize molecular pump 8 and dry pump 9 that by-product is discharged etch chamber 3.In etching process, reaction can be released or absorb heat, therefore needs to connect cooler 10 bottom electrostatic chuck 5, and cooler 10 can pass into coolant to the bottom of electrostatic chuck 5, to keep the temperature of electrostatic chuck 5, it is ensured that the uniformity of etching.Generally, the temperature of the coolant that cooler 10 provides is the temperature of electrostatic chuck 5.
In the present invention, the particular type not restriction to chemical etching gas, as long as can react with BiSbTe substrate.In order to reduce the cost of etching technics, it is preferable that described chemical etching gas includes hydrogen and methane.Hydrogen produces hydrion (H after being ionized+), methane is ionized generation methyl (CH3 -), hydrion can react with the Te in BiSbTe substrate, and methyl reacts with Bi and Sb in BiSbTe substrate, and concrete chemical equation is as follows:
Bi3++3CH3 -→Bi(CH3)3；
Sb3++3CH3 -→Sb(CH3)3；
Te2-+2H+→H2Te。
The compound H generated in etching process2Te is readily volatilized product, and compound Bi (CH3)3With compound Sb (CH3)3Can be attached in pattern side wall and form sidewall protection.Therefore, the figure that lithographic method of the present invention is formed is utilized can to have the pattern that sidewall is smooth.
Preferably, described etching gas also includes physical etchings gas, and described physical etchings gas is the gas not reacted with BiSbTe substrate after ionization.The plasma that described physical etchings gas is formed can while bombarding BiSbTe substrate, it is prevented that the by-product Bi (CH produced in etching process3)3With Sb (CH3) be deposited in bottom the figure that etching is formed, thus further increasing the levels of precision of the figure that lithographic method provided by the present invention is formed.
In the present invention, the concrete composition of physical etchings gas is not limited, as long as not reacting with BiSbTe substrate.Such as, described physical etchings gas is any one or a few the mixing in nitrogen, helium and argon.
Because the molecular weight of argon is relatively big, good physical bombardment effect can be produced after ionization, it is therefore preferred that described physical etchings gas is argon.
In order to improve the levels of precision of the figure formed by described lithographic method further, preferably, the flow that described physical etchings gas flow shared by described etching gas is shared in described etching gas more than any one gas in described chemical etching gas.
As mentioned above it is possible, described physical etchings gas is preferably argon.When described physical etchings gas is argon, the flow of described physical etchings gas preferably accounts for the 40%～70% of described etching gas total flow, so that obtain good physical bombardment effect in whole etching process.And, when the flow of physical etchings gas is in above-mentioned scope, mask pattern can also be avoided to be subject to excessive bombardment, namely, avoid and mask pattern has the bottom that particle detachment is deposited on the groove that etching is formed to form micro-mask in etching process, and then more accurate figure can be formed on BiSbTe substrate.
When described physical etchings gas is argon, it is preferable that the flow of described physical etchings gas is 30～100sccm.It is further preferred that the flow of described physical etchings gas is 20～60sccm.
Preferably, the flow of described chemical etching gas can be 5～10sccm.When the flow-control of described chemical etching gas is within the scope of this, both effectively substrate can be performed etching, too much by-product will not be generated again.
When utilizing lithographic method provided by the present invention that BiSbTe substrate is performed etching, it is necessary to adopt higher upper electrode power, so that methane and hydrogen in chemical etching gas effectively ionize.It is pointed out that too high upper electrode power can cause particle encounter probability to strengthen, cause that the mean free path of Particles Moving increases, and then cause that Dc bias declines, cause that etch rate and etching selection ratio reduce.It is therefore preferred that when described BiSbTe substrate is performed etching, upper electrode power is 2000～2500W.When upper electrode is within the scope of this, both so that methane and hydrogen effectively ionize, etch rate and etching selection ratio can will not be reduced again.
At lithographic method provided by the present invention to when described BiSbTe substrate is performed etching, it is necessary to adopt higher lower electrode power.Lower electrode power is high, it is possible to strengthen the energy of particle, thus improving the perpendicularity of the sidewall of the groove that etching is formed.Certainly, lower electrode power should be not too high yet, because too high lower electrode power can cause the damage of sidewall or flute surfaces, can increase the etch rate of mask pattern simultaneously, reduce etching selection ratio.In the present invention, lower electrode power is preferably 50～500W, more preferably 70～200W.When the power of bottom electrode is in above-mentioned scope, both can improve the perpendicularity of trenched side-wall, trenched side-wall or surface can be avoided again to form damage, also will not reduce etching selection ratio simultaneously.
As mentioned above it is possible, when performing etching technique, need bottom electrostatic chuck 5 to access the coolant that cooler 10 provides, to regulate the temperature of electrostatic chuck 5, thus ensureing the uniformity of etching.When described BiSbTe substrate is performed etching, the temperature of the coolant that described cooler provides is 40～80 DEG C, such that it is able to the temperature of electrostatic chuck 5 is arranged on 40～80 DEG C.It is arranged within the scope of this by the temperature of described electrostatic chuck to be conducive to the chemical reaction rate accelerating methyl and hydrion and BiSbTe substrate, thus the etching speed that quickening is to described BiSbTe substrate.
Further preferably, when described BiSbTe substrate is performed etching, the temperature of the coolant that described cooler provides is 60～80 DEG C, is arranged on 60～80 DEG C with the temperature by described electrostatic chuck, thus being conducive to the etching speed improved further described BiSbTe substrate.
In lithographic method provided by the present invention, described mask pattern is made up of photoresist.Therefore, before inserting in etch chamber by the BiSbTe substrate being provided with described mask pattern, described lithographic method can also comprise the following steps:
BiSbTe substrate is coated with a layer photoetching glue；
Photoresist is exposed development, to form described mask pattern.
The preferred implementation of provided by the present invention lithographic method is described below.
When performing etching, the pressure in etch chamber is 5mT, and upper electrode power is 2500W, and lower electrode power is 100W, and methane flow is 10sccm, and hydrogen flowing quantity is 10sccm, and argon flow amount is 40sccm, and in cooler, the temperature of coolant is 70 DEG C.
Fig. 3 is the scanning electron microscope (SEM) photograph of the figure obtained after BiSbTe substrate is performed etching by the preferred implementation utilizing lithographic method provided by the present invention；Fig. 4 is the partial enlarged drawing of Fig. 3.In the drawings, 4.64 μm what represent is the thickness of mask pattern, and 4.87 μm what represent is the gash depth formed on BiSbTe substrate.
It can be seen that utilize the substrate pattern side wall perpendicularity that lithographic method provided by the present invention obtains higher, and sidewall is more smooth, and the bottom of figure does not form hangover.It follows that utilize lithographic method provided by the present invention that BiSbTe substrate is performed etching can obtain the figure with degree of precision.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and the illustrative embodiments that adopts, but the invention is not limited in this.For those skilled in the art, without departing from the spirit and substance in the present invention, it is possible to make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (11)
1. the lithographic method that BiSbTe substrate is performed etching, it is characterised in that described lithographic method includes:
Will be formed with the BiSbTe substrate of mask pattern to put in etch chamber；
Utilizing etching gas that the BiSbTe substrate being formed with mask graph is performed etching, described etching gas includes the chemical etching gas that can react with described BiSbTe substrate.
2. lithographic method according to claim 1, it is characterised in that described chemical etching gas includes hydrogen and methane.
3. lithographic method according to claim 1, it is characterised in that described etching gas also includes physical etchings gas, described physical etchings gas is the gas not reacted with BiSbTe substrate after ionization.
4. lithographic method according to claim 3, it is characterised in that described physical etchings gas is any one or a few the mixing in nitrogen, helium and argon.
5. the lithographic method according to claim 3 or 4, it is characterized in that, the ratio that the flow of described physical etchings gas ratio shared by the total flow of described etching gas is shared in the total flow of described etching gas more than the flow of any one gas in described chemical etching gas.
6. lithographic method according to claim 5, it is characterised in that described physical etchings gas is argon, the flow of described physical etchings gas accounts for the 40%～70% of described etching gas total flow.
7. lithographic method according to claim 6, it is characterised in that the flow of described physical etchings gas is 30～100sccm.
8. lithographic method according to claim 7, it is characterised in that the flow of described physical etchings gas is 20～60sccm, the flow of described chemical etching gas is 5～10sccm.
9. lithographic method as claimed in any of claims 1 to 4, it is characterised in that when described BiSbTe substrate is performed etching, upper electrode power is 2000～2500W, and lower electrode power is 50～500W.
10. lithographic method according to claim 9, it is characterised in that when described BiSbTe substrate is performed etching, lower electrode power is 70～200W.
11. lithographic method as claimed in any of claims 1 to 4, it is characterised in that described BiSbTe substrate is arranged on electrostatic chuck, when described BiSbTe substrate is performed etching, the temperature of described electrostatic chuck is 40～80 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410815145.7A CN105789041A (en) | 2014-12-24 | 2014-12-24 | Method for etching BiSbTe substrate |
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| CN201410815145.7A CN105789041A (en) | 2014-12-24 | 2014-12-24 | Method for etching BiSbTe substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111848165A (en) * | 2020-08-03 | 2020-10-30 | 深圳见炬科技有限公司 | P-type bismuth telluride thermoelectric material and preparation method thereof |
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| US20080113102A1 (en) * | 2006-11-13 | 2008-05-15 | Takashi Arai | Agents for the surface treatment of zinc or zinc alloy products |
| CN101640230A (en) * | 2009-09-04 | 2010-02-03 | 中国电子科技集团公司第十一研究所 | Dry etching method for two-color HgCdTe device and etching device thereof |
| CN104766794A (en) * | 2014-01-02 | 2015-07-08 | 中国科学院上海硅酸盐研究所 | Dry etching method for bismuth telluride based materials |
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2014
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080113102A1 (en) * | 2006-11-13 | 2008-05-15 | Takashi Arai | Agents for the surface treatment of zinc or zinc alloy products |
| CN101640230A (en) * | 2009-09-04 | 2010-02-03 | 中国电子科技集团公司第十一研究所 | Dry etching method for two-color HgCdTe device and etching device thereof |
| CN104766794A (en) * | 2014-01-02 | 2015-07-08 | 中国科学院上海硅酸盐研究所 | Dry etching method for bismuth telluride based materials |
Non-Patent Citations (2)
| Title |
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| I. BONICHE等: "《process development and material characterization of polycrystalline Bi2Te3, PbTe, and PbSnSeTe thin films on silicon for millimeter-scale thermoelectric generators》", 《J. VAC. SCI. TECHNOL. A》 * |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111848165A (en) * | 2020-08-03 | 2020-10-30 | 深圳见炬科技有限公司 | P-type bismuth telluride thermoelectric material and preparation method thereof |
| CN111848165B (en) * | 2020-08-03 | 2021-04-09 | 深圳见炬科技有限公司 | P-type bismuth telluride thermoelectric material and preparation method thereof |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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Application publication date: 20160720 |
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