CN103000544B - A kind of circulation utilization method of phosphorus boron prediffused technique test pieces - Google Patents
A kind of circulation utilization method of phosphorus boron prediffused technique test pieces Download PDFInfo
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- CN103000544B CN103000544B CN201110269369.9A CN201110269369A CN103000544B CN 103000544 B CN103000544 B CN 103000544B CN 201110269369 A CN201110269369 A CN 201110269369A CN 103000544 B CN103000544 B CN 103000544B
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Abstract
Present invention is disclosed a kind of circulation utilization method of phosphorus boron prediffused technique test pieces, first will reclaim test pieces by soaking in the sulfuric acid of 100 ~ 120 DEG C and hydrogen peroxide mixed solution and pure water rinsing under room temperature, remove and reclaim test pieces surface grease, fiber and molecule-type stain; Recycling silicon dioxide etching liquid or hf etching remove the rich phosphorus/boron oxidation tunic on its surface; Finally utilize acid mixed solution to carry out etching to the test pieces reclaimed and be thinned to specification standards.Implement technical scheme of the present invention and after the technique that put into production, its outstanding effect is: one adopts chemical method thinning, easy and simple to handle and with low cost; Moreover for the test pieces of phosphorus/boron prediffusion, do not need the impact considering OISF, therefore do not need annealing process, simplify technological process; And use circulation utilization method of the present invention can improve the recycling rate of waterused of test pieces, reduce costs more than twice.
Description
Technical field
The present invention relates to a kind of cost optimal solution of technical field of manufacturing semiconductors, particularly relate to a kind of circulation utilization method of the test pieces for phosphorus/boron prediffused technique.
Background technology
The using method of normal test pieces is as follows: in phosphorus/boron prediffused technique, place test pieces; Along with completing of technique, there is the oxide layer of the rich phosphorus/boron of one deck at production sheet and test pieces surface-borne, and in two lamellar bodies, be diffused into the N/P type layer of certain junction depth; Usual employing hydrofluoric acid peels the oxide layer of the rich phosphorus/boron on test pieces surface off, measures positive and negative resistance value; Downshift is false sheet or accompanies sheet to use.
This technological process is simple, but for CPK>1.33, the even technique of more than CPK>1.67, and all and stable, the uniformity stable and consistent in sheet, does not need to detect multiple spot value for the accuracy of technique and accuracy.Test pieces only used once just downshift, was unfavorable for controlling cost.
Summary of the invention
In view of above-mentioned existing test pieces utilance is low, consume very huge defect, the object of the invention is the circulation utilization method proposing a kind of phosphorus boron prediffused technique test pieces, recycle efficiency with what improve test pieces.
The technical solution that the present invention realizes above-mentioned purpose is:
A circulation utilization method for phosphorus boron prediffused technique test pieces, is characterized by and comprise step:
I, the used test pieces of phosphorus boron prediffused technique is reclaimed; Soak reclaiming test pieces 10 minutes in the sulfuric acid of 100 ~ 120 DEG C and hydrogen peroxide mixed solution, and at room temperature pure water rinsing 12 minutes, remove and reclaim test pieces surface grease, fiber and molecule-type stain;
II, the recovery test pieces of hf etching through step I process gained of silicon dioxide etching liquid or mass content 48% is used, etch period meets over etching by the rich phosphorus boron oxide layer thickness reclaiming reality in test pieces and calculates, and at room temperature pure water rinsing 12 minutes again, remove and reclaim the epontic rich phosphorus boron oxidation tunic of test pieces;
III, by nitric acid, hydrofluoric acid, acetic acid mixing, carry out single or double to the recovery test pieces through step II process gained and etch thinning, etching depth is consistent with the resistance substrate rate of the resistance substrate rate with proper testing sheet that reclaim test pieces;
IV, recovery test pieces thickness is measured, and the test pieces of the thinning 20 μm of obtained reusable edibles of the recovery test pieces that step III is obtained, described thinning 20 μm is each one side of recovery test pieces thinning 10 μm of sums respectively.
Implement technical scheme of the present invention and after the technique that put into production, its outstanding effect is embodied in:
One adopts chemical method thinning, easy and simple to handle and with low cost; Moreover for the test pieces of phosphorus/boron prediffusion, do not need the impact considering OISF, therefore do not need annealing process, simplify technological process; And use circulation utilization method of the present invention can improve the recycling rate of waterused of test pieces, reduce costs more than twice.
Accompanying drawing explanation
Fig. 1 is the process chart that the present invention reclaims test pieces and recycles.
Embodiment
Below in conjunction with accompanying drawing, the flow process that the test pieces after whole phosphorus/boron prediffusion reclaims cycling and reutilization is further explained.
Reclaim and prepare the used test pieces of phosphorus boron prediffused technique, as shown in the top of Fig. 1; Laser-marking (not shown) is carried out, to show the difference with proper testing sheet to the test pieces after the used phosphorus/boron pre-expansion reclaimed.Shown in figure: this recovery test pieces has middle silicon substrate layer 1, the oxide layer of the N/P type layer 2 of certain junction depth and the rich phosphorus/boron on outermost layer two sides outside silicon substrate layer 1.
Configuration sulfuric acid (H
2sO
4) and hydrogen peroxide (H
2o
2) mixed solution (being not particularly limited its relative scale), be heated to (preferably 110 DEG C) between temperature 100 ~ 120 DEG C, put into the recovery test pieces that step is disposed and soak 10 minutes, at room temperature use pure water rinsing 12 minutes again, test pieces surface grease is reclaimed, the object that fiber and molecule-type stain to reach to remove.
Service quality content is the recovery test pieces that more than the pure hf etching of 48% processes gained, and etch period should be as the criterion to reclaim rich phosphorus boron oxide layer thickness actual in test pieces, and general needs more than 5 minutes, to ensure the effect of overetch.Room temperature pure water rinsing 12 minutes again, to remove epontic rich phosphorus boron oxidation tunic, as shown in the middle part of Fig. 1.
Nitric acid, hydrofluoric acid, acetic acid are mixed into process silicon etching solution in the ratio of 2:1:1, carry out one side etching thinning 10 μm or thinning 20 μm of two-sided etching to the recovery test pieces of premenstrual step process gained, etching depth is consistent with the resistance substrate rate of the resistance substrate rate with proper testing sheet that reclaim test pieces.Such as: thinning single surface 20 μm is applicable to resistance value more than 1 ohm, temperature is the phosphorus/boron prediffused technique of less than 1200 degree.Measure and reclaim test pieces thickness, and the test pieces of the thinning 20 μm of obtained reusable edibles of the recovery test pieces that step III is obtained, described thinning 20 μm is each one side of recovery test pieces thinning 10 μm of sums respectively.As shown in the bottom of Fig. 1.Then can unify to be arranged into production line to continue to recycle.
More than recycle in process: except the pure hydrofluoric acid that service quality content is 48%, silicon dioxide etching liquid can also be used to replace; And for chemical reduction technique, wherein the ratio of process silicon etching solution is not limited to 2:1:1, any ratio can be used to substitute.
Circulation utilization method of the present invention is on probation through dropping into, its obvious technical effects, and specifically one adopts chemical method thinning, easy and simple to handle and with low cost; Moreover for the test pieces of phosphorus/boron prediffusion, do not need the impact considering OISF, therefore do not need annealing process, simplify technological process; And use circulation utilization method of the present invention can improve the recycling rate of waterused of test pieces, reduce costs more than twice.
Above-mentioned embodiment just illustrates for of the present invention, instead of limitation of the present invention, and any unsubstantiality do not exceeded in spirit of the present invention replaces or the innovation and creation of amendment all drop within protection scope of the present invention.
Claims (1)
1. a circulation utilization method for phosphorus boron prediffused technique test pieces, is characterized by and comprise step:
I, the used test pieces of phosphorus boron prediffused technique is reclaimed; Soak reclaiming test pieces 10 minutes in the sulfuric acid of 100 ~ 120 DEG C and hydrogen peroxide mixed solution, and at room temperature pure water rinsing 12 minutes, remove and reclaim test pieces surface grease, fiber and molecule-type stain;
II, the hf etching of service quality content 48% is through the recovery test pieces of step I process gained, etch period meets over etching by the rich phosphorus boron oxide layer thickness reclaiming reality in test pieces and calculates, and at room temperature pure water rinsing 12 minutes again, remove and reclaim the epontic rich phosphorus boron oxidation tunic of test pieces;
III, by nitric acid, hydrofluoric acid, acetic acid mixing, carry out single or double to the recovery test pieces through step II process gained and etch thinning, etching depth is consistent with the resistance substrate rate of the resistance substrate rate with proper testing sheet that reclaim test pieces;
IV, recovery test pieces thickness is measured, and the test pieces of the thinning 20 μm of obtained reusable edibles of the recovery test pieces that step III is obtained, described thinning 20 μm is each one side of recovery test pieces thinning 10 μm of sums respectively.
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| CN201110269369.9A CN103000544B (en) | 2011-09-13 | 2011-09-13 | A kind of circulation utilization method of phosphorus boron prediffused technique test pieces |
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| CN201110269369.9A CN103000544B (en) | 2011-09-13 | 2011-09-13 | A kind of circulation utilization method of phosphorus boron prediffused technique test pieces |
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| CN103000544B true CN103000544B (en) | 2016-04-13 |
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| CN108091558B (en) * | 2017-12-20 | 2020-08-21 | 武汉新芯集成电路制造有限公司 | Silicon layer thinning method for reducing silicon void defect rate |
| CN111128784B (en) * | 2019-12-31 | 2022-06-24 | 杭州中欣晶圆半导体股份有限公司 | Method for measuring compactness of silicon dioxide film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1613565A (en) * | 2004-12-02 | 2005-05-11 | 上海交通大学 | Preparation for super-hydrophobic superfine structure surface |
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| KR100230484B1 (en) * | 1996-12-24 | 1999-11-15 | 이창세 | Method for reusing of waste silicon wafer |
| JP2004281620A (en) * | 2003-03-14 | 2004-10-07 | Sony Corp | Washing method of wafer |
| CN102021658A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Heavily doped monocrystalline silicon wafer corrosion technique by alkali corrosion before acid corrosion |
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Address after: New area, industrial park road six Zhenfa 214142 Jiangsu province Wuxi City No. three Patentee after: Lite semiconductor (Wuxi) Co. Ltd. Address before: 214142 Jiangsu Province, Wuxi City Industrial Park, No. 1 East Road six Zhenfa Patentee before: Concord Electronic (Wuxi) Co., Ltd. |