CN103000544A - Recycling method of test strips for phosphorus and boron prediffusion process - Google Patents
Recycling method of test strips for phosphorus and boron prediffusion process Download PDFInfo
- Publication number
- CN103000544A CN103000544A CN2011102693699A CN201110269369A CN103000544A CN 103000544 A CN103000544 A CN 103000544A CN 2011102693699 A CN2011102693699 A CN 2011102693699A CN 201110269369 A CN201110269369 A CN 201110269369A CN 103000544 A CN103000544 A CN 103000544A
- Authority
- CN
- China
- Prior art keywords
- test pieces
- test strips
- etching
- phosphorus
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
Abstract
The invention discloses a recycling method of test strips for a phosphorus and boron prediffusion process. The method includes: soaking recycled test strips in sulfuric acid and hydrogen peroxide mixed solution at the temperature of 100-120 DEG C and washing the soaked test strips by pure water at the room temperature so as to remove grease, fibers and molecular contamination on the surfaces of the recycled test strips; then, using silicon dioxide etching solution or hydrofluoric acid for etching to remove phosphorus-rich/boron oxide films on the surfaces of the recycled test strips; and finally, using acidic mixture for etching and thinning the recycled test strips to meet specification standards. After implementing the technical scheme and putting the technical scheme into a production process, the recycling method has the outstanding advantages that operation is convenient while cost is low as a chemical method is adopted for thinning; and OISF (oxidation-induced stacking fault) influences do not need to consider for the phosphorus/boron prediffusion test strips, so that an annealing process is not needed, and process flow is simplified. By the aid of the recycling method, recycle rate of the test strips can be increased, and cost is reduced by more than 2 times.
Description
Technical field
The present invention relates to a kind of cost optimization scheme of technical field of manufacturing semiconductors, relate in particular to a kind of circulation utilization method of the test pieces for phosphorus/boron prediffused technique.
Background technology
The using method of normal test pieces is as follows: place test pieces in phosphorus/boron prediffused technique; Along with finishing of technique, the oxide layer of the rich phosphorus/boron of one deck is arranged producing the growth of sheet and test pieces surface, and the N/P type layer that in two lamellar bodies, is diffused into certain junction depth; Usually adopt hydrofluoric acid to peel the oxide layer of the rich phosphorus/boron on test pieces surface off, measure the positive and negative resistance value; Lower category and be false sheet or accompany sheet to use.
This technological process is simple, but for CPK〉1.33, even CPK technique more than 1.67, the accuracy of technique and accuracy all and stable, the uniformity stable and consistent in the sheet does not need to detect the multiple spot value.Test pieces was only used once and was just lowered category, and was unfavorable for controlling cost.
Summary of the invention
The defective low in view of above-mentioned existing test pieces utilance, that consumption is very huge the objective of the invention is to propose a kind of phosphorus boron prediffused technique with the circulation utilization method of test pieces, to improve the recycling efficient of test pieces.
The present invention realizes that the technical solution of above-mentioned purpose is:
A kind of phosphorus boron prediffused technique is with the circulation utilization method of test pieces, it is characterized by to comprise step:
I, the used test pieces of recovery phosphorus boron prediffused technique; Soaked 10 minutes in 100～120 ℃ sulfuric acid and hydrogen peroxide mixed solution reclaiming test pieces, and pure water rinsing 12 minutes at room temperature, to remove and reclaim test pieces surface grease, fiber and molecule-type stain;
The hf etching of II, use silicon dioxide etching liquid or mass content 48% is processed the recovery test pieces of gained through the step I, etch period satisfies over etching by actual rich phosphorus boron oxide layer thickness on the recovery test pieces and calculates, and pure water rinsing 12 minutes at room temperature again, remove and reclaim the epontic rich phosphorus boron oxidation tunic of test pieces;
III, nitric acid, hydrofluoric acid, acetic acid are mixed, the recovery test pieces of processing gained through the step II is carried out single or double etching attenuate, etching depth is consistent with the resistance substrate rate of proper testing sheet with the resistance substrate rate that reclaims test pieces;
Test pieces thickness is reclaimed in IV, measurement, and the recovery test pieces attenuate 20 μ m that the step III obtains is made the test pieces of reusable edible, and described attenuate 20 μ m are for reclaiming respectively attenuate 10 μ m sums of each single face of test pieces.
Implement technical scheme of the present invention and with after its technique that puts into production, its outstanding effect is embodied in:
One adopts the chemical method attenuate, and is easy and simple to handle and with low cost; Moreover for the test pieces of phosphorus/boron prediffusion, do not need to consider the impact of OISF, therefore do not need annealing process, simplified technological process; And use circulation utilization method of the present invention can improve the recycling rate of waterused of test pieces, reduce more than the cost twice.
Description of drawings
Fig. 1 is that the present invention reclaims the recycling process chart of test pieces.
Embodiment
The flow process that reclaims cycling and reutilization below in conjunction with the test pieces of accompanying drawing after to whole phosphorus/boron prediffusion is further explained.
Recovery is also prepared the used test pieces of phosphorus boron prediffused technique, shown in the top of Fig. 1; Test pieces after the used phosphorus that reclaims/boron pre-expansion is carried out laser-marking (not shown), to show the difference with the proper testing sheet.By shown in the figure as seen: the silicon substrate layer 1 of this recovery test pieces in the middle of having, the oxide layer of the N/P type layer 2 of the certain junction depth in silicon substrate layer 1 outside and the rich phosphorus/boron on outermost layer two sides.
Configuration sulfuric acid (H
2SO
4) and hydrogen peroxide (H
2O
2) mixed solution (not limiting especially its relative scale), be heated between 100～120 ℃ of the temperature (preferred 110 ℃), putting into the recovery test pieces that the step is disposed soaked 10 minutes, at room temperature use again pure water rinsing 12 minutes, reclaim test pieces surface grease, the purpose that fiber and molecule-type stain to reach to remove.
Service quality content is 48% the above recovery test pieces of processing gained of pure hf etching, and etch period should be as the criterion to reclaim rich phosphorus boron oxide layer thickness actual on the test pieces, generally needs more than 5 minutes, to guarantee the effect of overetch.The room temperature pure water rinsing is 12 minutes again, to remove epontic rich phosphorus boron oxidation tunic, shown in the middle part of Fig. 1.
Nitric acid, hydrofluoric acid, acetic acid are mixed into process silicon etching solution in the ratio of 2:1:1, to carry out single face etching attenuate 10 μ m or two-sided etching attenuate 20 μ m through the recovery test pieces of front step process gained, etching depth is consistent with the resistance substrate rate of proper testing sheet with the resistance substrate rate that reclaims test pieces.For example: thinning single surface 20 μ m are applicable to resistance value more than 1 ohm, and temperature is the following phosphorus of 1200 degree/boron prediffused technique.Measure and reclaim test pieces thickness, and the recovery test pieces attenuate 20 μ m that the step III obtains are made the test pieces of reusable edible, described attenuate 20 μ m are for reclaiming respectively attenuate 10 μ m sums of each single face of test pieces.Shown in the bottom of Fig. 1.Then can unify to be arranged into production line continues recycling.
In the above recycling process: except service quality content is 48% pure hydrofluoric acid, can also use the silicon dioxide etching liquid to replace; And for chemical reduction technique, wherein the ratio of process silicon etching solution is not limited to 2:1:1, can use any ratio to substitute.
Circulation utilization method of the present invention is on probation through dropping into, its obvious technical effects, and particularly one adopts the chemical method attenuate, and is easy and simple to handle and with low cost; Moreover for the test pieces of phosphorus/boron prediffusion, do not need to consider the impact of OISF, therefore do not need annealing process, simplified technological process; And use circulation utilization method of the present invention can improve the recycling rate of waterused of test pieces, reduce more than the cost twice.
Above-mentioned embodiment is just for explanation of the present invention, rather than limitation of the present invention, and the innovation and creation that any unsubstantiality that does not exceed in the connotation scope of the present invention is replaced or revised all drop within protection scope of the present invention.
Claims (1)
1. a phosphorus boron prediffused technique is with the circulation utilization method of test pieces, it is characterized by to comprise step:
I, the used test pieces of recovery phosphorus boron prediffused technique; Soaked 10 minutes in 100～120 ℃ sulfuric acid and hydrogen peroxide mixed solution reclaiming test pieces, and pure water rinsing 12 minutes at room temperature, to remove and reclaim test pieces surface grease, fiber and molecule-type stain;
The hf etching of II, use silicon dioxide etching liquid or mass content 48% is processed the recovery test pieces of gained through the step I, etch period satisfies over etching by actual rich phosphorus boron oxide layer thickness on the recovery test pieces and calculates, and pure water rinsing 12 minutes at room temperature again, remove and reclaim the epontic rich phosphorus boron oxidation tunic of test pieces;
III, nitric acid, hydrofluoric acid, acetic acid are mixed, the recovery test pieces of processing gained through the step II is carried out single or double etching attenuate, etching depth is consistent with the resistance substrate rate of proper testing sheet with the resistance substrate rate that reclaims test pieces;
Test pieces thickness is reclaimed in IV, measurement, and the recovery test pieces attenuate 20 μ m that the step III obtains is made the test pieces of reusable edible, and described attenuate 20 μ m are for reclaiming respectively attenuate 10 μ m sums of each single face of test pieces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110269369.9A CN103000544B (en) | 2011-09-13 | 2011-09-13 | A kind of circulation utilization method of phosphorus boron prediffused technique test pieces |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110269369.9A CN103000544B (en) | 2011-09-13 | 2011-09-13 | A kind of circulation utilization method of phosphorus boron prediffused technique test pieces |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103000544A true CN103000544A (en) | 2013-03-27 |
| CN103000544B CN103000544B (en) | 2016-04-13 |
Family
ID=47928967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110269369.9A Active CN103000544B (en) | 2011-09-13 | 2011-09-13 | A kind of circulation utilization method of phosphorus boron prediffused technique test pieces |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103000544B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091558A (en) * | 2017-12-20 | 2018-05-29 | 武汉新芯集成电路制造有限公司 | A kind of silicon layer thining method for reducing silicon cavity blemish rate |
| CN111128784A (en) * | 2019-12-31 | 2020-05-08 | 杭州中欣晶圆半导体股份有限公司 | Method for measuring compactness of silicon dioxide film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100230484B1 (en) * | 1996-12-24 | 1999-11-15 | 이창세 | Method for reusing of waste silicon wafer |
| JP2004281620A (en) * | 2003-03-14 | 2004-10-07 | Sony Corp | Washing method of wafer |
| CN1613565A (en) * | 2004-12-02 | 2005-05-11 | 上海交通大学 | Preparation for super-hydrophobic superfine structure surface |
| CN102021658A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Heavily doped monocrystalline silicon wafer corrosion technique by alkali corrosion before acid corrosion |
-
2011
- 2011-09-13 CN CN201110269369.9A patent/CN103000544B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100230484B1 (en) * | 1996-12-24 | 1999-11-15 | 이창세 | Method for reusing of waste silicon wafer |
| JP2004281620A (en) * | 2003-03-14 | 2004-10-07 | Sony Corp | Washing method of wafer |
| CN1613565A (en) * | 2004-12-02 | 2005-05-11 | 上海交通大学 | Preparation for super-hydrophobic superfine structure surface |
| CN102021658A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Heavily doped monocrystalline silicon wafer corrosion technique by alkali corrosion before acid corrosion |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091558A (en) * | 2017-12-20 | 2018-05-29 | 武汉新芯集成电路制造有限公司 | A kind of silicon layer thining method for reducing silicon cavity blemish rate |
| CN108091558B (en) * | 2017-12-20 | 2020-08-21 | 武汉新芯集成电路制造有限公司 | Silicon layer thinning method for reducing silicon void defect rate |
| CN111128784A (en) * | 2019-12-31 | 2020-05-08 | 杭州中欣晶圆半导体股份有限公司 | Method for measuring compactness of silicon dioxide film |
| CN111128784B (en) * | 2019-12-31 | 2022-06-24 | 杭州中欣晶圆半导体股份有限公司 | Method for measuring compactness of silicon dioxide film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103000544B (en) | 2016-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108565316B (en) | Monocrystalline silicon piece texturing method | |
| CN103199005B (en) | A kind of cleaning process of crystal silicon chip | |
| CN102951845B (en) | A kind of one side engraving method of liquid crystal panel glass | |
| CN101276856A (en) | Process and equipment for etching and drying silicon solar cell | |
| CN103681974B (en) | Dual grooved polycrystalline silicon texturing method | |
| CN101769848B (en) | Method for detecting etching fluid filter | |
| CN107523881A (en) | A kind of preprocess method for preparing monocrystalline silicon suede | |
| CN101590476A (en) | A kind of cleaning method of monocrystalline silicon piece | |
| CN103000544A (en) | Recycling method of test strips for phosphorus and boron prediffusion process | |
| CN114192489B (en) | Cleaning method of LPCVD quartz boat | |
| CN110391317B (en) | Textured surface preparation method of monocrystalline silicon wafer | |
| CN102881767B (en) | A kind of chain type diffusion technique for solaode | |
| CN109309142B (en) | Liquid source diffusion process before silicon wafer glass passivation | |
| CN104640360B (en) | A kind of compensation method of pcb board copper thickness | |
| CN104659156B (en) | Etching method of single crystalline silicon solar cell | |
| CN114156163A (en) | Novel efficient cleaning method for monocrystalline silicon wafer | |
| WO2019042084A1 (en) | Method for selective texture preparation on surface of crystalline silicon wafer | |
| CN102768952B (en) | Method for reprocessing unqualified monocrystalline silicon wafers after diffusion | |
| CN107623055A (en) | A kind of preparation method of quasi- single crystal battery | |
| CN108766869A (en) | A kind of silicon chip of solar cell slot type cleaning method | |
| CN103000545B (en) | Phosphorus/boron prediffused technique multiplexing method of test sheet | |
| CN105489705A (en) | Etching and cleaning process for manufacturing crystalline silicon solar cell | |
| CN206148454U (en) | Solar cell diffusion dead layer remove device | |
| CN106653874B (en) | A kind of implementation method of III V II-VI group solar cell evaporation antireflective coating | |
| CN104157587A (en) | Shape testing piece and forming method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: New area, industrial park road six Zhenfa 214142 Jiangsu province Wuxi City No. three Patentee after: Lite semiconductor (Wuxi) Co. Ltd. Address before: 214142 Jiangsu Province, Wuxi City Industrial Park, No. 1 East Road six Zhenfa Patentee before: Concord Electronic (Wuxi) Co., Ltd. |