CN203482165U - Integrated packaging structure of surface acoustic wave filter - Google Patents
Integrated packaging structure of surface acoustic wave filter Download PDFInfo
- Publication number
- CN203482165U CN203482165U CN201320540165.9U CN201320540165U CN203482165U CN 203482165 U CN203482165 U CN 203482165U CN 201320540165 U CN201320540165 U CN 201320540165U CN 203482165 U CN203482165 U CN 203482165U
- Authority
- CN
- China
- Prior art keywords
- surface acoustic
- wave filter
- acoustic wave
- tuning
- tuning circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
An integrated packaging structure of a surface acoustic wave filter belongs to the technical field of surface acoustic waves. The integrated packaging structure comprises a surface acoustic wave filter chip, a matching tuning circuit and a packaging shell. The packaging shell is composed of a packaging base, outer pins of the packaging base, and a sealing cap covering the packaging base. The integrated packaging structure is characterized in that a tuning substrate is arranged, the matching tuning circuit is manufactured on the tuning substrate, the surface acoustic wave filter chip is adhered to the tuning substrate and is electrically connected with the matching tuning circuit through a bonding wire, and the tuning substrate is adhered to the packaging base and is electrically connected with the outer pins of the packaging base through bonding wires. According to the integrated packaging structure, the surface acoustic wave filter chip and the matching tuning circuit are integrated and packaged in a same packaging body so that the structure of interconnection of the surface acoustic wave filter chip, the matching tuning circuit and an application circuit is simplified. Consequently, the integrated packaging structure has the advantages of compact structure, small loss, strong anti-jamming capability and the like. The overall performance of a surface acoustic wave filter application system can be improved.
Description
Technical field
The utility model relates to a kind of electron package structure, and especially a kind of Surface Acoustic Wave Filter integrated encapsulation structure, belongs to surface acoustic wave techniques field.
Background technology
Surface Acoustic Wave Filter is in access during application circuit, usually need to its with front late-class circuit between tuning circuit is set, to realize mating of electrical parameter between the front late-class circuit of device and its, thereby bring into play the optimum performance of Surface Acoustic Wave Filter.Surface Acoustic Wave Filter of the prior art generally adopts individual packages method, be that each filter chip is placed in separately a package casing, and coupling tuning circuit is arranged on outside device package, the weak point of bringing is thus that the interconnecting construction between Surface Acoustic Wave Filter and outer coupling tuning circuit is comparatively complicated, loss is larger, poor anti jamming capability, and then the overall performance of Surface Acoustic Wave Filter application system is produced to significant adverse impact.
Utility model content
The purpose of this utility model is for above-mentioned the deficiencies in the prior art, overcoming in prior art Surface Acoustic Wave Filter chip and coupling tuning circuit is placed in inside and outside packaging body, interconnecting construction is complicated, loss is large, poor anti jamming capability, and then the overall performance of Surface Acoustic Wave Filter application system is produced to the shortcoming of significant adverse impact, thereby provide a kind of Surface Acoustic Wave Filter integrated encapsulation structure.
The purpose of this utility model is achieved through the following technical solutions: Surface Acoustic Wave Filter integrated encapsulation structure, comprise Surface Acoustic Wave Filter chip, with Surface Acoustic Wave Filter chip electrical connection mate tuning circuit and package casing, package casing consists of outer pin, the sealing cap of encapsulation base plate, encapsulation base plate, sealing cap covers on encapsulation base plate, it is characterized in that, be provided with tuning substrate, tuning substrate is arranged in described package casing, and described coupling tuning circuit is produced on tuning substrate; Described Surface Acoustic Wave Filter die bonding on tuning substrate, and by bonding wire with mate tuning circuit and be electrically connected; Described tuning substrate bonding, on encapsulation base plate, and is electrically connected by the outer pin of bonding wire and encapsulation base plate.
Described tuning substrate is high frequency two sided pcb, and its positive central region is die bonding district, and its positive neighboring area arranges coupling tuning circuit, and its back side is provided with large area grounded metal film; Described Surface Acoustic Wave Filter die bonding is in die bonding district, the ground electrode of the ground electrode in described die bonding district and coupling tuning circuit is electrically connected by the via hole on tuning substrate and grounded metal film respectively, and grounded metal film is electrically connected by conductive silver glue and encapsulation base plate.
Described bonding wire comprises signal bonding wire, ground connection bonding wire, and signal bonding wire connects the signal electrode of Surface Acoustic Wave Filter chip and signal electrode and the coupling signal electrode of tuning circuit and the outer pin of encapsulation base plate of coupling tuning circuit successively; Described ground connection bonding wire connects the ground electrode of Surface Acoustic Wave Filter chip and the ground electrode in die bonding district.
The utility model is by Surface Acoustic Wave Filter chip and mate tuning circuit integration packaging in same packaging body, simplified the interconnection structure between Surface Acoustic Wave Filter chip, coupling tuning circuit and application circuit, there is compact conformation, loss is little, the advantages such as antijamming capability is strong, contribute to improve the overall performance of Surface Acoustic Wave Filter application system, the processing technology of the manufacture method of related integrated encapsulation structure and conventional Surface Acoustic Wave Filter and application circuit thereof is compatible, is easy to synchronous realization.
Accompanying drawing explanation
Fig. 1 is general structure schematic diagram of the present utility model;
Fig. 2 is the structural representation of tuning substrate in Fig. 1;
Fig. 3 is that the utility model is for encapsulating the structural representation of monophone surface wave filter chip;
Fig. 4 is that the utility model is for encapsulating the structural representation of the integrated Surface Acoustic Wave Filter core assembly of monolithic sheet;
In figure: 1 Surface Acoustic Wave Filter chip, 11 monophone surface wave filter chips, the integrated Surface Acoustic Wave Filter core assembly of 12 monolithic sheet, 101 chip signal electrodes, 102 chip ground electrodes, 2 tuning substrates, 21 die bonding districts, 22 coupling tuning circuits, 23 via holes, 24 grounded metal films, 201 coupling tuning circuit signal electrodes, 202 coupling tuning circuit ground electrodes, 203 die bonding district ground electrodes, 3 bonding wires, 31 signal bonding wires, 32 ground connection bonding wires, 4 encapsulation base plates, the outer pin of 41 encapsulation base plates, 5 sealing caps.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail:
Surface Acoustic Wave Filter integrated encapsulation structure, comprise Surface Acoustic Wave Filter chip 1, with Surface Acoustic Wave Filter chip electrical connection mate tuning circuit 22 and package casing, package casing consists of outer pin 41, the sealing cap 5 of encapsulation base plate 4, encapsulation base plate, and sealing cap covers on encapsulation base plate.
Be provided with tuning substrate 2, tuning substrate is arranged in described package casing, and tuning substrate is high frequency two sided pcb, and its positive central region is die bonding district 21, its positive neighboring area arranges coupling tuning circuit 22, and its back side is provided with large area grounded metal film 24.
Ground connection bonding wire connects the ground electrode 203 in the ground electrode 102He die bonding district of Surface Acoustic Wave Filter chip.The ground electrode 202 of the ground electrode 203 in die bonding district and coupling tuning circuit is respectively by the via hole 23 on tuning substrate and 24 electrical connections of grounded metal film, and grounded metal film is by conductive silver glue and encapsulation base plate 4 electrical connections.
The present embodiment is the integration packaging of monophone surface wave filter chip and single channel filter match tuning circuit.
Surface Acoustic Wave Filter integrated encapsulation structure, comprise monophone surface wave filter chip 11, with single channel filter match tuning circuit 22 and the package casing of monophone surface wave filter chip electrical connection.Package casing consists of outer pin 41, the sealing cap 5 of encapsulation base plate 4, encapsulation base plate, and sealing cap covers on encapsulation base plate.
Be provided with tuning substrate 2, its positive central region is die bonding district 21, its positive neighboring area arranges single channel filter match tuning circuit 22, its back side is provided with large area grounded metal film 24, tuning substrate 2 is arranged in package casing, and single channel filter match tuning circuit 22 is arranged on tuning substrate.
Monophone surface wave filter chip 11 is bonded in tuning substrate 2 die bonding districts, middle part 21, and tuning substrate 2 is bonded on encapsulation base 4, coated with sealing cap 5.
As shown in Figure 2 and Figure 3, bonding wire 31 connects the outer pin 41 of chip signal electrode 101 and coupling tuning circuit signal electrode 201 and coupling tuning circuit signal electrode 201 and encapsulation base plate 4 successively, and bonding wire 32 connects chip ground electrode 102He die bonding district ground electrode 203; Die bonding district ground electrode 203 is connected with tuning substrate back grounded metal film 24 by via hole 23 with coupling tuning circuit ground electrode 202, and tuning substrate back grounded metal film 24 is by conductive silver glue and encapsulation base plate 4 electrical connections.
In the present embodiment, Surface Acoustic Wave Filter chip is for being produced on 128 ° of on-chip 144.45MHz Surface Acoustic Wave Filter of Y-X lithium niobate piezoelectric monocrystal, the material of tuning substrate is the high frequency FR4 epoxy glass fiber substrate of double-side copper-applying, die adhesive is the red glue of BS-6600K type bonding die, substrate bonding agent is A6/HA6 type conductive silver glue, and encapsulation base and sealing cap are the full copper encapsulation of the SF-4 external member with 4 outer pins.
The present embodiment is that the integrated Surface Acoustic Wave Filter core assembly of monolithic sheet mates the integration packaging of tuning circuit with multi-channel filter.
Surface Acoustic Wave Filter integrated encapsulation structure, comprises the integrated Surface Acoustic Wave Filter core assembly of monolithic sheet 12, mates tuning circuit 22 and package casing with the multi-channel filter of Surface Acoustic Wave Filter chip electrical connection.Package casing consists of outer pin 41, the sealing cap 5 of encapsulation base plate 4, encapsulation base plate, and sealing cap covers on encapsulation base plate.
Be provided with tuning substrate 2, its positive central region is die bonding district 21, its positive neighboring area arranges multi-channel filter coupling tuning circuit 22, its back side is provided with large area grounded metal film 24, tuning substrate 2 is arranged in package casing, and multi-channel filter coupling tuning circuit 22 is arranged on tuning substrate.
As shown in Figure 1, the integrated Surface Acoustic Wave Filter core assembly of monolithic sheet 12 is bonded in tuning substrate 2 die bonding districts, middle part 21, and tuning substrate 2 is bonded on encapsulation base 4, finally coated with sealing cap 5.
As Fig. 2, shown in Fig. 4, bonding wire 31 connects signal electrode 101 and corresponding tuning circuit signal electrode 201 and each channel matched tuning circuit electrode 201 and corresponding each outer pin 41 of encapsulation base plate of respectively mating of each filter on chip successively, bonding wire 32 connects each filter ground electrode 102He He die bonding district ground electrode 203 on chip, die bonding district ground electrode 203 is connected with tuning substrate back grounded metal film 24 by via hole 23 with each coupling tuning circuit ground electrode 202, tuning substrate back grounded metal film 24 is by conductive silver glue and encapsulation base plate 4 electrical connections.
In the present embodiment, Surface Acoustic Wave Filter chip is the integrated 4 channel Surface Acoustic Wave Filter groups of monolithic that are produced on ST quartz piezoelectric monocrystal chip, its centre frequency is respectively 201.00MHz, 201.25MHz, 201.50MHz and 201.75MHz, the material of tuning substrate is the high frequency FR4 epoxy glass fiber substrate of double-side copper-applying, die adhesive is the red glue of BS-6600K type bonding die, substrate bonding agent is A6/HA6 type conductive silver glue, and encapsulation base and sealing cap are the full copper encapsulation of the SF-10 external member with 10 outer pins.
Claims (3)
1. a Surface Acoustic Wave Filter integrated encapsulation structure, comprise Surface Acoustic Wave Filter chip (1), with Surface Acoustic Wave Filter chip electrical connection mate tuning circuit (22) and package casing, package casing consists of outer pin (41), the sealing cap (5) of encapsulation base plate (4), encapsulation base plate, sealing cap covers on encapsulation base plate, it is characterized in that, be provided with tuning substrate (2), tuning substrate (2) is arranged in described package casing, and described coupling tuning circuit (22) is produced on tuning substrate; Described Surface Acoustic Wave Filter die bonding on tuning substrate, and by bonding wire (3) with mate tuning circuit and be electrically connected; Described tuning substrate bonding, on encapsulation base plate, and is electrically connected by the outer pin of bonding wire and encapsulation base plate.
2. Surface Acoustic Wave Filter integrated encapsulation structure according to claim 1, it is characterized in that, described tuning substrate is high frequency two sided pcb, its positive central region is die bonding district (21), its positive neighboring area arranges coupling tuning circuit (22), and its back side is provided with large area grounded metal film (24); Described Surface Acoustic Wave Filter die bonding is in die bonding district, the ground electrode (202) of the ground electrode (203) in described die bonding district and coupling tuning circuit is respectively by the via hole (23) on tuning substrate and grounded metal film (24) electrical connection, and grounded metal film is by conductive silver glue and encapsulation base plate (4) electrical connection.
3. Surface Acoustic Wave Filter integrated encapsulation structure according to claim 1 and 2, it is characterized in that, described bonding wire comprises signal bonding wire (31), ground connection bonding wire (32), and signal bonding wire connects the signal electrode (101) of Surface Acoustic Wave Filter chip and signal electrode (201) and the coupling signal electrode (201) of tuning circuit and the outer pin (41) of encapsulation base plate of coupling tuning circuit successively; Described ground connection bonding wire connects the ground electrode (102) of Surface Acoustic Wave Filter chip and the ground electrode (203) in die bonding district.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320540165.9U CN203482165U (en) | 2013-09-02 | 2013-09-02 | Integrated packaging structure of surface acoustic wave filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320540165.9U CN203482165U (en) | 2013-09-02 | 2013-09-02 | Integrated packaging structure of surface acoustic wave filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203482165U true CN203482165U (en) | 2014-03-12 |
Family
ID=50230411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320540165.9U Expired - Fee Related CN203482165U (en) | 2013-09-02 | 2013-09-02 | Integrated packaging structure of surface acoustic wave filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203482165U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441746A (en) * | 2013-09-02 | 2013-12-11 | 扬州大学 | Integrated packaging structure of surface acoustic wave filter and packaging method thereof |
| CN104184431A (en) * | 2014-09-10 | 2014-12-03 | 中国电子科技集团公司第二十六研究所 | High-frequency ceramic surface mounting transverse surface acoustic wave resonance filter |
| CN105897215A (en) * | 2016-05-20 | 2016-08-24 | 爱普科斯科技（无锡）有限公司 | Packaging structure with bulk acoustic wave filter chip |
| CN109060226A (en) * | 2018-07-05 | 2018-12-21 | 新疆石油管理局有限公司数据公司 | A kind of encapsulating structure and packaging method of pressure-sensing device |
-
2013
- 2013-09-02 CN CN201320540165.9U patent/CN203482165U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441746A (en) * | 2013-09-02 | 2013-12-11 | 扬州大学 | Integrated packaging structure of surface acoustic wave filter and packaging method thereof |
| CN103441746B (en) * | 2013-09-02 | 2017-03-15 | 扬州大学 | SAW filter integrated encapsulation structure and its method for packing |
| CN104184431A (en) * | 2014-09-10 | 2014-12-03 | 中国电子科技集团公司第二十六研究所 | High-frequency ceramic surface mounting transverse surface acoustic wave resonance filter |
| CN104184431B (en) * | 2014-09-10 | 2017-02-15 | 中国电子科技集团公司第二十六研究所 | High-frequency ceramic surface mounting transverse surface acoustic wave resonance filter |
| CN105897215A (en) * | 2016-05-20 | 2016-08-24 | 爱普科斯科技（无锡）有限公司 | Packaging structure with bulk acoustic wave filter chip |
| CN105897215B (en) * | 2016-05-20 | 2018-08-28 | 全讯射频科技(无锡)有限公司 | A kind of encapsulating structure of bulk accoustic wave filter chip |
| CN109060226A (en) * | 2018-07-05 | 2018-12-21 | 新疆石油管理局有限公司数据公司 | A kind of encapsulating structure and packaging method of pressure-sensing device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203482165U (en) | Integrated packaging structure of surface acoustic wave filter | |
| CN105897218B (en) | Groove buried via hole type surface sound filtering chip encapsulating structure and its manufacturing method | |
| CN106301283A (en) | The encapsulating structure of SAW filter and manufacture method | |
| TW200811031A (en) | Package structure and packaging method of MEMS microphone | |
| CN104868872A (en) | Surface acoustic wave filter packaging structure | |
| CN103441746B (en) | SAW filter integrated encapsulation structure and its method for packing | |
| WO2018224051A1 (en) | Anti-electromagnetic interference radio frequency module and implementation method therefor | |
| TW200814837A (en) | Structure and manufacturing method of inversed microphone module and microphone chip component | |
| CN105897210A (en) | Grooved surface acoustic filter chip packaging structure and manufacturing method thereof | |
| TW200713551A (en) | Packages, methods for fabricating the same, anisotropic conductive films, and conductive particles utilized therein | |
| CN203788459U (en) | Mems microphone | |
| CN201226592Y (en) | Silicon microphone packaged by flexible circuit board | |
| CN109088614A (en) | SAW filter and its packaging method and electronic equipment | |
| CN205945672U (en) | Chip interconnection packaging structure of integrated surface acoustic wave filter subassembly | |
| CN104486907B (en) | The three-dimensionally integrated wafer level packaging structure of high-frequency I PD modules and method for packing | |
| CN105742255B (en) | Round metal chip level groove buried via hole type surface sound filtering chip encapsulating structure and method | |
| CN206282838U (en) | The integrated encapsulation structure of passive device and active device | |
| CN203845811U (en) | Multifunctional sensor | |
| CN207559959U (en) | SAW device air-tightness wafer level packaging structure | |
| CN206332653U (en) | A kind of SAW device electrode | |
| CN105810597B (en) | The manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure | |
| CN202679626U (en) | Chip for integrating MEMS microphone with CMOS integrated circuit | |
| CN203788460U (en) | Mems microphone | |
| CN204145748U (en) | A kind of MEMS microphone | |
| CN103663352A (en) | MEMS microphone packaging structure and packaging method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140312 Termination date: 20160902 |