CN206332653U - A kind of SAW device electrode - Google Patents
A kind of SAW device electrode Download PDFInfo
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- CN206332653U CN206332653U CN201621422200.7U CN201621422200U CN206332653U CN 206332653 U CN206332653 U CN 206332653U CN 201621422200 U CN201621422200 U CN 201621422200U CN 206332653 U CN206332653 U CN 206332653U
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Abstract
The utility model discloses a kind of SAW device electrode, including it is connected to the busbar on interdigital transducer and reflecting grating；The bus bar termination is connected with electrode；Soldered ball is welded with the electrode；The busbar includes two layers；First layer busbar is close to the piezoelectric substrate, and there is laciniation the end of the first layer busbar；Second layer busbar is covered on the first layer busbar, and the end of the second layer busbar is integrally connected with the electrode；The thickness of the electrode is equal with the thickness of the first layer busbar and the second layer busbar, and the medial surface of the electrode, be in contact with the first layer busbar part, is entrenched among the laciniation.The utility model make it that electrode and busbar are closely linked, while ensure that the thickness of aluminium film at electrode, allows plant ball upside-down mounting to be difficult to do electrode aluminium film to come off.
Description
Technical field
The utility model is related to SAW device, and in particular to a kind of SAW device electrode.
Background technology
CSP technologies are the new type integrated circuit encapsulation technologies just grown up recent years, the production encapsulated using CSP technologies
Product packaging density is high, and performance is good, and small volume is lightweight, compatible with surface mounting technique, therefore its development speed is quite fast,
One of important encapsulation technology of integrated circuit is turned into.
In the prior art, the interdigital transducer of SAW device, busbar and electrode etc. are all in same Time Stamp
Brush is produced on compressing tablet substrate, can plant the means upside-down mounting of ball, but prior art by electrode to CSP filter chips afterwards
Shortcoming be, because electrode is very thin, so in ball bond, it may appear that rosin joint even penetrate etc. phenomenon.Fig. 1 is existing skill
Schematic diagram of the ball bond on electrode in art.As shown in figure 1, conventionally, as electrode and transducer are simultaneously
Complete, and transducer cannot be made thick in itself, otherwise can not ensure transducer performance, so can not so ensure electrode
51 thickness, during ball is planted, the ultrasound of electrode 51 that very thin aluminium film is easily fabricated to by soldered ball 61 punctures, and causes aluminium film to take off
Fall.
Utility model content
In view of the shortcomings of the prior art, the utility model discloses a kind of SAW device electrode.
The technical solution of the utility model is as follows：
Being made on a kind of SAW device electrode, including piezoelectric substrate, piezoelectric substrate has interdigital transducer and position
Reflecting grating in the interdigital transducer both sides；Also include being connected to confluxing on the interdigital transducer and the reflecting grating
Bar；The bus bar termination is connected with electrode；Soldered ball is welded with the electrode；The busbar includes two layers；First layer
Busbar is close to the piezoelectric substrate, and there is laciniation the end of the first layer busbar；Second layer busbar covers
It is placed on the first layer busbar, and the end of the second layer busbar is integrally connected with the electrode；It is described
The thickness of electrode is equal with the thickness of the first layer busbar and the second layer busbar, and the medial surface of the electrode,
Be in contact part with the first layer busbar, is entrenched among the laciniation.
Its further technical scheme is that the thickness of the electrode is 2~3um；The ball bond is in the electrode
Depth is 0.5~1um.
Its further technical scheme is that the material of the electrode is aluminium or albronze.
Its further technical scheme is, the sawtooth equidistant arrangement in the laciniation.
Advantageous Effects of the present utility model are：
The other parts of electrode and SAW filter of the present utility model are separated, and have done at electrode zigzag knot
Structure, can so make it that first layer busbar is preferably connected with electrode so that the aluminium film at electrode is preferably and chip list
Face and busbar are combined together, while ensure that the thickness of aluminium film at electrode, allow plant ball upside-down mounting to be difficult to do electrode aluminium film
Come off.
Brief description of the drawings
Fig. 1 is schematic diagram of the ball bond on electrode in the prior art.
Fig. 2 is top view of the present utility model.
Fig. 3 is the enlarged drawing of part A in Fig. 2.
Fig. 4 is the side view of busbar and electrode connection.
Fig. 5 is the chip photolithography plate of electrodeless structure.
Fig. 6 is to include second layer busbar and the set of electrode structure is mechanical.
Fig. 7 is the chip structure after alignment.
Embodiment
Fig. 2 is top view of the present utility model.As shown in Fig. 2 the utility model include piezoelectric substrate 1, piezoelectric substrate 1 it
Upper making has interdigital transducer 2 and the reflecting grating 3 positioned at the both sides of interdigital transducer 2.Also include being connected to the He of interdigital transducer 2
Busbar 4 on reflecting grating 3.The end of busbar 4 is connected with electrode 5.Soldered ball 6 is welded with electrode 5.Busbar 4 includes
Two layers；First layer busbar 41 is close to piezoelectric substrate 1 and made, and there is laciniation 7 end of first layer busbar 41.
Fig. 3 is the enlarged drawing of part A in Fig. 2.As shown in Figure 3, it is seen that the laciniation of the end of first layer busbar 41
7.Because second layer busbar 42 is covered on first layer busbar 41, by first layer busbar 41 and its zigzag of end
Structure 7 is covered, so laciniation 7 is expressed as dotted line in figure 3.Sawtooth equidistant arrangement in laciniation 7.
Fig. 4 is the side view of busbar and electrode connection.As shown in figure 4, the end of second layer busbar 42 and electricity
Pole 5 is integrally connected, and the thickness of electrode 5 is equal with the thickness of first layer busbar 41 and second layer busbar 42, and electrode 5
Medial surface, be in contact with first layer busbar 41 part, be entrenched among laciniation 7.
It is preferred that, the thickness of electrode 5 is 2~3um；The depth that soldered ball 6 is welded in electrode 5 is 0.5~1um.In existing skill
In art, in order to ensure the quality of interdigital transducer, the thickness of electrode is general in 0.5um or so.It can be seen that the utility model is ensureing
Effectively increase the thickness of electrode in the case that the thickness of interdigital transducer is constant, such soldered ball just can well with electrode knot
Close, electrode aluminium film holds caducous situation before will not also occurring.
It is preferred that, the material of electrode 5 is aluminium or albronze.Wherein albronze property is more preferably.
Manufacturing process of the present utility model is：
1st, the chip photolithography plate of electrodeless structure is made first, and Fig. 5 is the chip photolithography plate of electrodeless structure.Such as Fig. 5 institutes
Show, tetra- positions of a, b, c, d in Fig. 5 are the position that electrode structure should be in the prior art, and of the present utility model
In this step, remove it.Laciniation 7 can be seen by the end of first layer busbar 41 in Fig. 5 in addition.
2nd, next alignment second layer busbar and electrode.Fig. 6 is to include second layer busbar and the set of electrode structure is mechanical.
As shown in fig. 6, set mechanical upper only second layer busbar and electrode structure, the wherein position of second layer busbar 42 and first layer
The position correspondence of busbar 41.The purpose of this step is to thicken busbar, and supplement electrode structure.
Fig. 6 is the chip structure after alignment.Shown in Fig. 7 be chip manufacturing well after final layout.
Above-described is only preferred embodiment of the present utility model, and the utility model is not limited to above example.Can
To understand, what those skilled in the art directly exported or associated on the premise of spirit of the present utility model and design is not departed from
Oher improvements and changes, are considered as being included within protection domain of the present utility model.
Claims (4)
1. being made on a kind of SAW device electrode, including piezoelectric substrate (1), piezoelectric substrate (1) has interdigital transducer (2)
And the reflecting grating (3) positioned at the interdigital transducer (2) both sides；Also include being connected to the interdigital transducer (2) and described
Busbar (4) on reflecting grating (3)；Characterized in that, busbar (4) end is connected with electrode (5)；The electrode
(5) soldered ball (6) is welded with；The busbar (4) includes two layers；First layer busbar (41) is close to the piezoelectric substrate
, and there is laciniation (7) end of the first layer busbar (41) (1)；Second layer busbar (42) is covered in described
On one layer of busbar (41), and the end of the second layer busbar (42) is integrally connected with the electrode (5)；It is described
The thickness of electrode (5) is equal with the thickness of the first layer busbar (41) and the second layer busbar (42), and the electricity
The medial surface of pole (5), be in contact with the first layer busbar (41) part, is entrenched among the laciniation (7).
2. SAW device electrode as claimed in claim 1, it is characterised in that the thickness of the electrode (5) is 2~3um；
The depth that the soldered ball (6) is welded in the electrode (5) is 0.5~1um.
3. SAW device electrode as claimed in claim 1, it is characterised in that the material of the electrode (5) be aluminium or
Albronze.
4. SAW device electrode as claimed in claim 1, it is characterised in that the sawtooth in the laciniation (7)
Equidistant arrangement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621422200.7U CN206332653U (en) | 2016-12-23 | 2016-12-23 | A kind of SAW device electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621422200.7U CN206332653U (en) | 2016-12-23 | 2016-12-23 | A kind of SAW device electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206332653U true CN206332653U (en) | 2017-07-14 |
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ID=59293369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621422200.7U Active CN206332653U (en) | 2016-12-23 | 2016-12-23 | A kind of SAW device electrode |
Country Status (1)
| Country | Link |
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| CN (1) | CN206332653U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109889180A (en) * | 2019-02-25 | 2019-06-14 | 湖南大学 | A kind of preparation method of high-frequency sound surface wave interdigital transducer |
| CN113765497A (en) * | 2021-09-07 | 2021-12-07 | 北京航天微电科技有限公司 | Power-resistant surface acoustic wave filter chip, bridging overlay process thereof and filter |
| CN115996035A (en) * | 2023-01-28 | 2023-04-21 | 无锡市好达电子股份有限公司 | Elastic wave device |
-
2016
- 2016-12-23 CN CN201621422200.7U patent/CN206332653U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109889180A (en) * | 2019-02-25 | 2019-06-14 | 湖南大学 | A kind of preparation method of high-frequency sound surface wave interdigital transducer |
| CN113765497A (en) * | 2021-09-07 | 2021-12-07 | 北京航天微电科技有限公司 | Power-resistant surface acoustic wave filter chip, bridging overlay process thereof and filter |
| CN113765497B (en) * | 2021-09-07 | 2023-08-08 | 北京航天微电科技有限公司 | Power-resistant surface acoustic wave filter chip, bridging and alignment process thereof and filter |
| CN115996035A (en) * | 2023-01-28 | 2023-04-21 | 无锡市好达电子股份有限公司 | Elastic wave device |
| CN115996035B (en) * | 2023-01-28 | 2024-05-07 | 无锡市好达电子股份有限公司 | Elastic wave device |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 214124 Jiangsu province Binhu District of Wuxi City Economic Development Zone, Road No. 115 Patentee after: Wuxi Haoda Electronic Co., Ltd Address before: 214124 Jiangsu province Binhu District of Wuxi City Economic Development Zone, Road No. 115 Patentee before: Shoulder Electronics Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |